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Issues
15 June 1999
ISSN 0021-8979
EISSN 1089-7550
In this Issue
GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)
Near infrared excited micro-Raman spectra of 4:1 methanol–ethanol mixture and ruby fluorescence at high pressure
J. Appl. Phys. 85, 8011–8017 (1999)
https://doi.org/10.1063/1.370636
CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)
Thermosetting enhancement of the light-induced polar orientation stability of molecules in polymers
J. Appl. Phys. 85, 8018–8022 (1999)
https://doi.org/10.1063/1.370637
CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)
Macro- and microstress analysis in sol-gel derived thin films
J. Appl. Phys. 85, 8023–8031 (1999)
https://doi.org/10.1063/1.370638
Growth mechanism of hydrogenated amorphous silicon studied by in situ scanning tunneling microscopy
J. Appl. Phys. 85, 8032–8039 (1999)
https://doi.org/10.1063/1.370639
Structural modifications in ion-implanted silicate glasses
J. Appl. Phys. 85, 8040–8049 (1999)
https://doi.org/10.1063/1.370640
Correlation of diffuse scattering with nanocrystallite size in porous silicon using transmission microscopy
J. Appl. Phys. 85, 8050–8053 (1999)
https://doi.org/10.1063/1.370641
Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen
J. Appl. Phys. 85, 8054–8059 (1999)
https://doi.org/10.1063/1.370642
Response of boron carbide subjected to large strains, high strain rates, and high pressures
J. Appl. Phys. 85, 8060–8073 (1999)
https://doi.org/10.1063/1.370643
Shoulder at the 887 infrared band in neutron irradiated Si
J. Appl. Phys. 85, 8074–8078 (1999)
https://doi.org/10.1063/1.370644
An approach to the defect structure analysis of lithium niobate single crystals
J. Appl. Phys. 85, 8079–8082 (1999)
https://doi.org/10.1063/1.370645
Characterization of lead zirconate titanate piezoceramic using high frequency ultrasonic spectroscopy
J. Appl. Phys. 85, 8083–8091 (1999)
https://doi.org/10.1063/1.370646
Energy-dispersive x-ray diffraction and Raman scattering of bulk crystals at high pressure
J. Appl. Phys. 85, 8092–8096 (1999)
https://doi.org/10.1063/1.370647
doped low silica calcium aluminosilicate glasses: Thermomechanical properties
M. L. Baesso; A. C. Bento; A. R. Duarte; A. M. Neto; L. C. M. Miranda; J. A. Sampaio; T. Catunda; S. Gama; F. C. G. Gandra
J. Appl. Phys. 85, 8112–8118 (1999)
https://doi.org/10.1063/1.370649
Tracer diffusion and mechanism of non-Arrhenius diffusion behavior of Zr and Nb in body-centered cubic Zr–Nb alloys
J. Appl. Phys. 85, 8119–8130 (1999)
https://doi.org/10.1063/1.370650
Numerical study of diffusion coefficient measurements with sinusoidal varying accelerations
J. Appl. Phys. 85, 8131–8136 (1999)
https://doi.org/10.1063/1.370651
Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon
J. Appl. Phys. 85, 8137–8144 (1999)
https://doi.org/10.1063/1.370652
Elasticity of ultrathin copper-phthalocyanine Langmuir–Blodgett films by picosecond ultrasonics
J. Appl. Phys. 85, 8155–8159 (1999)
https://doi.org/10.1063/1.370654
active layers on graded-composition buffer layers
B. H. Müller; R. Lantier; L. Sorba; S. Heun; S. Rubini; M. Lazzarino; A. Franciosi; E. Napolitani; F. Romanato; A. V. Drigo; L. Lazzarini; G. Salviati
J. Appl. Phys. 85, 8160–8169 (1999)
https://doi.org/10.1063/1.370655
Electric field induced surface modification of Au
J. Appl. Phys. 85, 8170–8177 (1999)
https://doi.org/10.1063/1.370656
CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)
Impact ionization rate calculations in wide band gap semiconductors
J. Appl. Phys. 85, 8178–8185 (1999)
https://doi.org/10.1063/1.370657
Characteristics of impact ionization rates in direct and indirect gap semiconductors
J. Appl. Phys. 85, 8186–8192 (1999)
https://doi.org/10.1063/1.370658
Isothermal transient ionic current as a characterization technique for ion transport in
J. Appl. Phys. 85, 8199–8204 (1999)
https://doi.org/10.1063/1.370694
Enhancement of thermoelectric power factor in composite thermoelectrics
J. Appl. Phys. 85, 8205–8216 (1999)
https://doi.org/10.1063/1.370660
Polarization anisotropy in quasiplanar sidewall quantum wires on patterned GaAs (311)A substrates
J. Appl. Phys. 85, 8228–8234 (1999)
https://doi.org/10.1063/1.370663
Suppression of the surface-inversion layer of p-type InAs
J. Appl. Phys. 85, 8242–8246 (1999)
https://doi.org/10.1063/1.370665
Electrical properties of surface conductive layers of homoepitaxial diamond films
J. Appl. Phys. 85, 8267–8273 (1999)
https://doi.org/10.1063/1.370668
Hot electron effects and dynamic behavior of gold doped germanium thin films as cryogenic phonon sensors
J. Appl. Phys. 85, 8274–8280 (1999)
https://doi.org/10.1063/1.370669
Electrical fluctuations and photoinduced current transients in long wavelength epilayers
J. Appl. Phys. 85, 8287–8291 (1999)
https://doi.org/10.1063/1.370671
interface-state generation by electron injection
J. Appl. Phys. 85, 8292–8298 (1999)
https://doi.org/10.1063/1.370672
Lower critical fields of and single crystals
J. Appl. Phys. 85, 8299–8306 (1999)
https://doi.org/10.1063/1.370673
Modeling of the power-dependent velocity of microwave magnetic envelope solitons in thin films
J. Appl. Phys. 85, 8307–8311 (1999)
https://doi.org/10.1063/1.370674
Resistance noise as a technique for measuring finite-size effects in single-layer spin-glass films
J. Appl. Phys. 85, 8317–8321 (1999)
https://doi.org/10.1063/1.370676
CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)
Photoluminescence studies on gray tracked single crystals
J. Appl. Phys. 85, 8332–8336 (1999)
https://doi.org/10.1063/1.370679
Electron emission from ferroelectric ceramics with a special design patterned front electrode
J. Appl. Phys. 85, 8337–8342 (1999)
https://doi.org/10.1063/1.370680
Grain oriented crystallization, piezoelectric, and pyroelectric properties of glass ceramics
J. Appl. Phys. 85, 8343–8348 (1999)
https://doi.org/10.1063/1.370681
Structural and optical properties of type II GaSb/GaAs self-assembled quantum dots grown by molecular beam epitaxy
J. Appl. Phys. 85, 8349–8352 (1999)
https://doi.org/10.1063/1.370622
Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si
J. Appl. Phys. 85, 8353–8361 (1999)
https://doi.org/10.1063/1.370682
Thermoluminescence of doped with induced by ultraviolet and x-ray radiation
J. Appl. Phys. 85, 8362–8365 (1999)
https://doi.org/10.1063/1.370683
High field breakdown of narrow quasi uniform field gaps in vacuum
J. Appl. Phys. 85, 8400–8404 (1999)
https://doi.org/10.1063/1.370687
INTERDISCIPLINARY PHYSICS (PACS 81-98)
Vacuum ultraviolet annealing of hydroxyapatite films grown by pulsed laser deposition
J. Appl. Phys. 85, 8410–8414 (1999)
https://doi.org/10.1063/1.370689
X-ray photoelectron spectroscopy study of low-temperature molybdenum oxidation process
J. Appl. Phys. 85, 8415–8418 (1999)
https://doi.org/10.1063/1.370690
Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering
J. Appl. Phys. 85, 8419–8422 (1999)
https://doi.org/10.1063/1.370691
Direct deposition of a blanket tungsten layer on by preexposure of helium plasma
J. Appl. Phys. 85, 8423–8426 (1999)
https://doi.org/10.1063/1.370692
A microdeposition technique for carbon nanotubes based on electron beam lithography
J. Appl. Phys. 85, 8432–8435 (1999)
https://doi.org/10.1063/1.370623
Laser-induced modification of electron field emission from nanocrystalline diamond films
J. Appl. Phys. 85, 8436–8440 (1999)
https://doi.org/10.1063/1.370624
A study of low temperature crystallization of amorphous thin film indium–tin–oxide
J. Appl. Phys. 85, 8445–8450 (1999)
https://doi.org/10.1063/1.370695
Magnetism and compressive modulus of magnetic fluid containing gels
J. Appl. Phys. 85, 8451–8455 (1999)
https://doi.org/10.1063/1.370626
noise measurements on indium antimonide metal–oxide–semiconductor field-effect transistors
J. Appl. Phys. 85, 8485–8489 (1999)
https://doi.org/10.1063/1.370630
COMMUNICATIONS
Young-modulus determination of an orthotropic thin plate in the through-thickness direction
J. Appl. Phys. 85, 8490–8491 (1999)
https://doi.org/10.1063/1.370631
Formation of Si islands from amorphous thin films upon thermal annealing
J. Appl. Phys. 85, 8492–8494 (1999)
https://doi.org/10.1063/1.370632
Comment on “Mixed electron emission from lead zirconate–titanate ceramics” [J. Appl. Phys. 83, 6055 (1998)]
J. Appl. Phys. 85, 8495–8496 (1999)
https://doi.org/10.1063/1.370697
High-transmission defect modes in two-dimensional metallic photonic crystals
J. Appl. Phys. 85, 8499–8501 (1999)
https://doi.org/10.1063/1.370634
Dependence of the fundamental band gap of on alloy composition and pressure
W. Shan; J. W. Ager, III; K. M. Yu; W. Walukiewicz; E. E. Haller; M. C. Martin; W. R. McKinney; W. Yang
J. Appl. Phys. 85, 8505–8507 (1999)
https://doi.org/10.1063/1.370696
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.