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Issues
1 January 1999
ISSN 0021-8979
EISSN 1089-7550
In this Issue
GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)
Pure nuclear Bragg reflection of a periodic multilayer
L. Deák; G. Bayreuther; L. Bottyán; E. Gerdau; J. Korecki; E. I. Kornilov; H. J. Lauter; O. Leupold; D. L. Nagy; A. V. Petrenko; V. V. Pasyuk-Lauter; H. Reuther; E. Richter; R. Röhloberger; E. Szilágyi
J. Appl. Phys. 85, 1–7 (1999)
https://doi.org/10.1063/1.369470
CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)
Upconversion mechanism in -doped fluorozirconate glasses under 800 nm excitation
J. Appl. Phys. 85, 29–37 (1999)
https://doi.org/10.1063/1.369445
Dynamics of photorefractive grating erasure in polymeric composites
J. Appl. Phys. 85, 38–43 (1999)
https://doi.org/10.1063/1.369395
On the axial structure of a nitrogen surface wave sustained discharge: Theory and experiment
J. Appl. Phys. 85, 49–62 (1999)
https://doi.org/10.1063/1.369480
Microwave reflections from a vacuum ultraviolet laser produced plasma sheet
J. Appl. Phys. 85, 63–68 (1999)
https://doi.org/10.1063/1.369392
Heteronuclear and homonuclear surface abstraction reactions of Cl, Br, and F
J. Appl. Phys. 85, 74–86 (1999)
https://doi.org/10.1063/1.369423
CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)
Confocal micro-Raman characterization of lattice damage in high energy aluminum implanted 6H-SiC
J. Appl. Phys. 85, 99–104 (1999)
https://doi.org/10.1063/1.369427
Gallium implantation induced deep levels in -type 6H–SIC
J. Appl. Phys. 85, 105–107 (1999)
https://doi.org/10.1063/1.369428
Noise-induced local heatings in beam irradiation
J. Appl. Phys. 85, 134–147 (1999)
https://doi.org/10.1063/1.369432
Study of sample thickness dependence in electron-beam irradiation of self-developing inorganic materials
J. Appl. Phys. 85, 148–152 (1999)
https://doi.org/10.1063/1.369461
Thermophysical modeling of bump formation during laser texturing of silicate glasses
J. Appl. Phys. 85, 153–159 (1999)
https://doi.org/10.1063/1.369462
Optical and electron paramagnetic resonance study of light-emitting ion implanted silicon dioxide layers
J. Appl. Phys. 85, 168–173 (1999)
https://doi.org/10.1063/1.369464
Trapping of Si interstitials in boron doping background: Boron clustering and the “+1” model
J. Appl. Phys. 85, 174–181 (1999)
https://doi.org/10.1063/1.369466
Threading dislocation reduction in strained layers
J. Appl. Phys. 85, 182–192 (1999)
https://doi.org/10.1063/1.369467
Effective thermal conductivity of porous strontium oxide and strontium carbonate samples
J. Appl. Phys. 85, 193–198 (1999)
https://doi.org/10.1063/1.369468
Ultraviolet-reduced reduction and crystallization of indium oxide films
J. Appl. Phys. 85, 203–207 (1999)
https://doi.org/10.1063/1.369471
Solid phase epitaxial regrowth of with Ti–Ge–Ni metallization for ohmic contacts
J. Appl. Phys. 85, 208–212 (1999)
https://doi.org/10.1063/1.369472
Diffusion during metalorganic vapor-phase epitaxy on V-groove patterned substrates
J. Appl. Phys. 85, 249–255 (1999)
https://doi.org/10.1063/1.369437
CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)
Occupancy level of the center in Te-doped
J. Appl. Phys. 85, 256–263 (1999)
https://doi.org/10.1063/1.369438
A theoretical investigation of field induced switching in a disordered electron wave coupler
J. Appl. Phys. 85, 270–275 (1999)
https://doi.org/10.1063/1.369440
Observation of ballistic carrier propagation in Bi and W by scanning electron microscopy
J. Appl. Phys. 85, 276–279 (1999)
https://doi.org/10.1063/1.369441
Enhanced electrical properties of rigid-rod polymer incorporated with electroactive triarylamino moieties
J. Appl. Phys. 85, 280–286 (1999)
https://doi.org/10.1063/1.369442
Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and thin films
Cheol Seong Hwang; Byoung Taek Lee; Chang Seok Kang; Ki Hoon Lee; Hag-Ju Cho; Horii Hideki; Wan Don Kim; Sang In Lee; Moon Yong Lee
J. Appl. Phys. 85, 287–295 (1999)
https://doi.org/10.1063/1.369443
Investigation of collection efficiencies much larger than unity in structures
J. Appl. Phys. 85, 296–301 (1999)
https://doi.org/10.1063/1.369444
Electrical resistivity of sputtered Cu/Cr multilayered thin films
J. Appl. Phys. 85, 302–309 (1999)
https://doi.org/10.1063/1.369446
High frequency giant magnetoresistance in evaporated Co/Cu multilayers deposited on Si(111) and Si(100)
J. Appl. Phys. 85, 314–318 (1999)
https://doi.org/10.1063/1.369448
Circumferential magnetization curves of Co-rich amorphous wires under tensile stress
J. Appl. Phys. 85, 319–324 (1999)
https://doi.org/10.1063/1.369449
CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)
Study of frequency dependent in amorphous ferroelectrics: Modified generalized Langevin equation analysis
J. Appl. Phys. 85, 347–351 (1999)
https://doi.org/10.1063/1.369454
Polarizing-field orientation and thermal treatment effects on the dielectric behavior of fluorapatite
J. Appl. Phys. 85, 352–361 (1999)
https://doi.org/10.1063/1.369455
Alternating current field effect on the freezing temperature of relaxor ferroelectrics
J. Appl. Phys. 85, 362–367 (1999)
https://doi.org/10.1063/1.369456
Charged defects and ferroelectricity in solid solution
J. Appl. Phys. 85, 368–371 (1999)
https://doi.org/10.1063/1.369457
Nonmonotonic concentration dependence of piezoelectric coefficients of 1–3 composites
J. Appl. Phys. 85, 372–379 (1999)
https://doi.org/10.1063/1.369458
Microstructure characterization of amorphous thin solid films in a fringe-free environment
J. Appl. Phys. 85, 388–396 (1999)
https://doi.org/10.1063/1.369460
Pressure dependence of electrical and optical characteristics of based organic electroluminescent diodes
J. Appl. Phys. 85, 397–400 (1999)
https://doi.org/10.1063/1.369396
Measurement of the nonlinear refractive index of polydiacetylene using Michelson interferometry and z-scan
J. Appl. Phys. 85, 401–403 (1999)
https://doi.org/10.1063/1.369397
Optical constants of cubic GaN in the energy range of 1.5–3.7 eV
J. Appl. Phys. 85, 404–407 (1999)
https://doi.org/10.1063/1.369398
Refractive index changes of Pd-coated magnesium lanthanide switchable mirrors upon hydrogen insertion
J. Appl. Phys. 85, 408–413 (1999)
https://doi.org/10.1063/1.369399
Optical properties of poly(disilanyleneoligothienylene)s and their doping characteristics
J. Appl. Phys. 85, 414–418 (1999)
https://doi.org/10.1063/1.369400
Sizing particles on substrates. A general method for oblique incidence
J. Appl. Phys. 85, 432–438 (1999)
https://doi.org/10.1063/1.369403
Photoluminescence study of deep levels in Cr-doped ZnSe
J. Appl. Phys. 85, 439–443 (1999)
https://doi.org/10.1063/1.369404
Picosecond infrared laser stimulation of luminescence in CaS:Eu,Sm
J. Appl. Phys. 85, 451–454 (1999)
https://doi.org/10.1063/1.369407
Laser-induced back ablation of aluminum thin films using picosecond laser pulses
J. Appl. Phys. 85, 460–465 (1999)
https://doi.org/10.1063/1.369393
INTERDISCIPLINARY PHYSICS (PACS 81-98)
On the initial stages of AlN thin-film growth onto (0001) oriented substrates by molecular beam epitaxy
J. Appl. Phys. 85, 466–472 (1999)
https://doi.org/10.1063/1.369409
Thermal stability enhancement of Cu/WN/SiOF/Si multilayers by post-plasma treatment of fluorine-doped silicon dioxide
Seoghyeong Lee; Dong Joon Kim; Sung-Hoon Yang; Jeongwon Park; Seil Sohn; Kyunghui Oh; Yong-Tae Kim; Jung-Yeul Kim; Geun-Young Yeom; Jong-Wan Park
J. Appl. Phys. 85, 473–477 (1999)
https://doi.org/10.1063/1.369410
Microfocusing and polarization effects in spherical neck ceramic microstructures during microwave processing
J. Appl. Phys. 85, 478–482 (1999)
https://doi.org/10.1063/1.369411
Doping of ZnSe during molecular beam epitaxial growth using an atomic phosphorus source
J. Appl. Phys. 85, 490–497 (1999)
https://doi.org/10.1063/1.369477
Effect of transverse current injection during air annealing on the formation of oxides in thin Ti films
J. Appl. Phys. 85, 498–500 (1999)
https://doi.org/10.1063/1.369478
Growth and characterization of beryllium-based II–VI compounds
J. Appl. Phys. 85, 512–517 (1999)
https://doi.org/10.1063/1.369479
Nanolithography by selective chemical vapor deposition with an atomic hydrogen resist
J. Appl. Phys. 85, 522–524 (1999)
https://doi.org/10.1063/1.369483
Microstructural study of the interfacial region in thin film solar cells
J. Appl. Phys. 85, 534–542 (1999)
https://doi.org/10.1063/1.369486
On the mechanism of aluminum via fill by reflow and forcefill as studied by transmission electron microscopy
J. Appl. Phys. 85, 571–577 (1999)
https://doi.org/10.1063/1.369491
Strain modification in thin alloys on (100) Si for formation of high density and uniformly sized quantum dots
Xiaoping Shao; Ralf Jonczyk; M. Dashiell; D. Hits; B. A. Orner; A.-S. Khan; K. Roe; J. Kolodzey; Paul R. Berger; M. Kaba; M. A. Barteau; K. M. Unruh
J. Appl. Phys. 85, 578–582 (1999)
https://doi.org/10.1063/1.369492
Ageing of aluminum electrical contacts to porous silicon
J. Appl. Phys. 85, 583–586 (1999)
https://doi.org/10.1063/1.369394
Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor
J. Appl. Phys. 85, 587–594 (1999)
https://doi.org/10.1063/1.369493
Double peak phenomenon in superconducting tunnel junction x-ray detectors
J. Appl. Phys. 85, 595–599 (1999)
https://doi.org/10.1063/1.369494
Enhancement of a rectifying characteristic of InGaP diodes by hydrogenation
J. Appl. Phys. 85, 600–603 (1999)
https://doi.org/10.1063/1.369495
Influence of the hole transport layer on the performance of organic light-emitting diodes
J. Appl. Phys. 85, 608–615 (1999)
https://doi.org/10.1063/1.369413
COMMUNICATIONS
Structure and photoluminescence of InGaAs self-assembled quantum dots grown on InP(001)
J. Appl. Phys. 85, 619–621 (1999)
https://doi.org/10.1063/1.369415
Electron irradiation effects on the intersubband transitions in InGaAs/AlGaAs multiple quantum wells
J. Appl. Phys. 85, 630–632 (1999)
https://doi.org/10.1063/1.369419
Anisotropic defect structure and transport properties of films on vicinal
J. Appl. Phys. 85, 635–637 (1999)
https://doi.org/10.1063/1.369421
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.