Skip Nav Destination

Issues

Select Decade

Select Year

Issue

GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)

Comparison of fluorescence-based temperature sensor schemes: Theoretical analysis and experimental validation

S. F. Collins; G. W. Baxter; S. A. Wade; T. Sun; K. T. V. Grattan; Z. Y. Zhang; A. W. Palmer

J. Appl. Phys. 84, 4649–4654 (1998) https://doi.org/10.1063/1.368705

Abstract

View articletitled, Comparison of fluorescence-based temperature sensor schemes: Theoretical analysis and experimental validation

Open the PDF for in another window

Tip-sample distance regulation for near-field scanning optical microscopy using the bending angle of the tapered fiber probe

P. K. Wei; W. S. Fann

J. Appl. Phys. 84, 4655–4660 (1998) https://doi.org/10.1063/1.368706

Abstract

View articletitled, Tip-sample distance regulation for near-field scanning optical microscopy using the bending angle of the tapered fiber probe

Open the PDF for in another window

Characterization and optimization of the detection sensitivity of an atomic force microscope for small cantilevers

Tilman E. Schäffer; Paul K. Hansma

J. Appl. Phys. 84, 4661–4666 (1998) https://doi.org/10.1063/1.368707

Abstract

View articletitled, Characterization and optimization of the detection sensitivity of an atomic force microscope for small cantilevers

Open the PDF for in another window

CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

Some effects of conduction band nonparabolicity on electron reflection spectrum of multiquantum barriers

Michinori Irikawa; Takuya Ishikawa; Yoshitaka Sasaki; Katsumi Iwasawa; Ikuo Suemune; Kenichi Iga

J. Appl. Phys. 84, 4667–4672 (1998) https://doi.org/10.1063/1.368708

Abstract

View articletitled, Some effects of conduction band nonparabolicity on electron reflection spectrum of multiquantum barriers

Open the PDF for in another window

Comparison between the Monte Carlo method and the drift-diffusion approximation in quantum-well laser simulation

A. D. Güçlü; R. Maciejko; A. Champagne; M. Abou-Khalil; T. Makino

J. Appl. Phys. 84, 4673–4676 (1998) https://doi.org/10.1063/1.368709

Abstract

View articletitled, Comparison between the Monte Carlo method and the drift-diffusion approximation in quantum-well laser simulation

Open the PDF for in another window

Giant sonic stop bands in two-dimensional periodic system of fluids

M. S. Kushwaha; B. Djafari-Rouhani

J. Appl. Phys. 84, 4677–4683 (1998) https://doi.org/10.1063/1.368710

Abstract

View articletitled, Giant sonic stop bands in two-dimensional periodic system of fluids

Open the PDF for in another window

Laser-induced evolution of hypocycloidal formation of vortex filaments from nonlinear Rayleigh–Taylor instability in a thin layer of molten metal

S. Lugomer; A. Maksimović

J. Appl. Phys. 84, 4684–4692 (1998) https://doi.org/10.1063/1.368711

Abstract

View articletitled, Laser-induced evolution of hypocycloidal formation of vortex filaments from nonlinear Rayleigh–Taylor instability in a thin layer of molten metal

Open the PDF for in another window

Statistical–mechanical calculations of thermal properties of diatomic gases

Francisco J. Gordillo-Vázquez; Joseph A. Kunc

J. Appl. Phys. 84, 4693–4703 (1998) https://doi.org/10.1063/1.368712

Abstract

View articletitled, Statistical–mechanical calculations of thermal properties of diatomic gases

Open the PDF for in another window

Modeling and three-dimensional simulation of the neutral dynamics in an air discharge confined in a microcavity. I. Formation and free expansion of the pressure waves

O. Eichwald; M. Yousfi; P. Bayle; M. Jugroot

J. Appl. Phys. 84, 4704–4715 (1998) https://doi.org/10.1063/1.368713

Abstract

View articletitled, Modeling and three-dimensional simulation of the neutral dynamics in an air discharge confined in a microcavity. I. Formation and free expansion of the pressure waves

Open the PDF for in another window

Modeling and three dimensional simulation of the neutral dynamics in an air discharge confined in a microcavity. II. Analysis of the wall and geometry effects

O. Eichwald; P. Bayle; Y. Yousfi; M. Jugroot

J. Appl. Phys. 84, 4716–4726 (1998) https://doi.org/10.1063/1.368714

Abstract

View articletitled, Modeling and three dimensional simulation of the neutral dynamics in an air discharge confined in a microcavity. II. Analysis of the wall and geometry effects

Open the PDF for in another window

Reactions in the afterglow of time modulated inductive discharges of Xe and $I_{2}$ mixtures

Paul N. Barnes; Mark J. Kushner

J. Appl. Phys. 84, 4727–4730 (1998) https://doi.org/10.1063/1.368799

Abstract

View articletitled, Reactions in the afterglow of time modulated inductive discharges of Xe and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">I</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> mixtures

Open the PDF for in another window

Information from probe characteristics in negative ion containing plasma

M. Vucelić; S. Mijović

J. Appl. Phys. 84, 4731–4735 (1998) https://doi.org/10.1063/1.368715

Abstract

View articletitled, Information from probe characteristics in negative ion containing plasma

Open the PDF for in another window

Surface interactions of ${CF}_{2}$ radicals during deposition of amorphous fluorocarbon films from ${CHF}_{3}$ plasmas

Nathan E. Capps; Neil M. Mackie; Ellen R. Fisher

J. Appl. Phys. 84, 4736–4743 (1998) https://doi.org/10.1063/1.368716

Abstract

View articletitled, Surface interactions of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> radicals during deposition of amorphous fluorocarbon films from <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CHF</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> plasmas

Open the PDF for in another window

Electromagnetic surface wave modes in nonrelativistic electron–positron plasmas

Sang-Hoon Cho; Hee J. Lee

J. Appl. Phys. 84, 4744–4748 (1998) https://doi.org/10.1063/1.368717

Abstract

View articletitled, Electromagnetic surface wave modes in nonrelativistic electron–positron plasmas

Open the PDF for in another window

CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

Electrical signatures and thermal stability of interstitial clusters in ion implanted Si

J. L. Benton; K. Halliburton; S. Libertino; D. J. Eaglesham; S. Coffa

J. Appl. Phys. 84, 4749–4756 (1998) https://doi.org/10.1063/1.368800

Abstract

View articletitled, Electrical signatures and thermal stability of interstitial clusters in ion implanted Si

Open the PDF for in another window

Electrical isolation of n-type GaAs layers by proton bombardment: Effects of the irradiation temperature

J. P. de Souza; I. Danilov; H. Boudinov

J. Appl. Phys. 84, 4757–4760 (1998) https://doi.org/10.1063/1.368817

Abstract

View articletitled, Electrical isolation of n-type GaAs layers by proton bombardment: Effects of the irradiation temperature

Open the PDF for in another window

Influence of the inhomogeneous surface pretilt on zig-zag defects

S. Kralj; J. Pirš; S. Žumer; R. Petkovšek

J. Appl. Phys. 84, 4761–4768 (1998) https://doi.org/10.1063/1.368718

Abstract

View articletitled, Influence of the inhomogeneous surface pretilt on zig-zag defects

Open the PDF for in another window

Annealing and recrystallization of amorphous silicon carbide produced by ion implantation

A. Höfgen; V. Heera; F. Eichhorn; W. Skorupa

J. Appl. Phys. 84, 4769–4774 (1998) https://doi.org/10.1063/1.368801

Abstract

View articletitled, Annealing and recrystallization of amorphous silicon carbide produced by ion implantation

Open the PDF for in another window

Influence of net strain, strain type, and temperature on the critical thickness of In(Ga)AsP-strained multi quantum wells

Matsuyuki Ogasawara; Hideo Sugiura; Manabu Mitsuhara; Mitsuo Yamamoto; Masashi Nakao

J. Appl. Phys. 84, 4775–4780 (1998) https://doi.org/10.1063/1.368719

Abstract

View articletitled, Influence of net strain, strain type, and temperature on the critical thickness of In(Ga)AsP-strained multi quantum wells

Open the PDF for in another window

Simulation of clustering and transient enhanced diffusion of boron in silicon

Masashi Uematsu

J. Appl. Phys. 84, 4781–4787 (1998) https://doi.org/10.1063/1.368720

Abstract

View articletitled, Simulation of clustering and transient enhanced diffusion of boron in silicon

Open the PDF for in another window

Abnormal electrical behavior and phase changes in implanted $p^{+}$ - and $n^{+} - Si$ channels under high current densities

J. S. Huang; C. N. Liao; K. N. Tu; S. L. Cheng; L. J. Chen

J. Appl. Phys. 84, 4788–4796 (1998) https://doi.org/10.1063/1.368802

Abstract

View articletitled, Abnormal electrical behavior and phase changes in implanted <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>p</mi><mrow><mi>+</mi></mrow></msup></math>- and <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>n</mi><mrow><mi>+</mi></mrow></msup><mi xmlns="">-</mi><mi mathvariant="normal" xmlns="">Si</mi></math> channels under high current densities

Open the PDF for in another window

Laser ablation induced surface modification of ${NdBa}_{2} {Cu}_{3} O_{7−δ}$ single crystal target in pulsed laser deposition

Yijie Li; Xin Yao; K. Tanabe

J. Appl. Phys. 84, 4797–4801 (1998) https://doi.org/10.1063/1.368721

Abstract

View articletitled, Laser ablation induced surface modification of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NdBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7−δ</mi></mrow></msub></math> single crystal target in pulsed laser deposition

Open the PDF for in another window

High-dose helium-implanted single-crystal silicon: Annealing behavior

R. Tonini; F. Corni; S. Frabboni; G. Ottaviani; G. F. Cerofolini

J. Appl. Phys. 84, 4802–4808 (1998) https://doi.org/10.1063/1.368803

Abstract

View articletitled, High-dose helium-implanted single-crystal silicon: Annealing behavior

Open the PDF for in another window

Evidence for the influence of thermal spikes on ion induced mixing in Si at energies between 3 and 300 keV

J. Cardenas; B. G. Svensson; M. Petravic

J. Appl. Phys. 84, 4809–4814 (1998) https://doi.org/10.1063/1.368722

Abstract

View articletitled, Evidence for the influence of thermal spikes on ion induced mixing in Si at energies between 3 and 300 keV

Open the PDF for in another window

X-ray phase-amplitude contrast mapping of single-crystal alloys near the absorption edge of the alloy impurity

A. Yu. Nikulin; J. R. Davis; N. T. Jones; P. Zaumseil

J. Appl. Phys. 84, 4815–4821 (1998) https://doi.org/10.1063/1.368723

Abstract

View articletitled, X-ray phase-amplitude contrast mapping of single-crystal alloys near the absorption edge of the alloy impurity

Open the PDF for in another window

Elastic-strain tensor by Rietveld refinement of diffraction measurements

Davor Balzar; Robert B. Von Dreele; Kristin Bennett; Hassel Ledbetter

J. Appl. Phys. 84, 4822–4833 (1998) https://doi.org/10.1063/1.368724

Abstract

View articletitled, Elastic-strain tensor by Rietveld refinement of diffraction measurements

Open the PDF for in another window

Particle-induced conductivity and photoconductivity of silicon under 17 MeV proton irradiation

Hiroshi Amekura; Naoki Kishimoto; Kenichiro Kono

J. Appl. Phys. 84, 4834–4841 (1998) https://doi.org/10.1063/1.368725

Abstract

View articletitled, Particle-induced conductivity and photoconductivity of silicon under 17 MeV proton irradiation

Open the PDF for in another window

Structure and bond length distribution in ${Hf}_{2} Fe$ and ${Hf}_{2} Co$ intermetallic compounds

B. Cekić; N. Ivanović; Z. Rakočević; V. Koteski; M. Manasijević; S. Koički

J. Appl. Phys. 84, 4842–4846 (1998) https://doi.org/10.1063/1.368726

Abstract

View articletitled, Structure and bond length distribution in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Hf</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">Fe</mi></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Hf</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">Co</mi></math> intermetallic compounds

Open the PDF for in another window

Stress-induced alignment and reorientation of hydrogen-associated donors in silicon

Yu. V. Gorelkinskii; N. N. Nevinnyi; Kh. A. Abdullin

J. Appl. Phys. 84, 4847–4850 (1998) https://doi.org/10.1063/1.368804

Abstract

View articletitled, Stress-induced alignment and reorientation of hydrogen-associated donors in silicon

Open the PDF for in another window

Spallation model for the high strain rates range

E. Dekel; S. Eliezer; Z. Henis; E. Moshe; A. Ludmirsky; I. B. Goldberg

J. Appl. Phys. 84, 4851–4858 (1998) https://doi.org/10.1063/1.368727

Abstract

View articletitled, Spallation model for the high strain rates range

Open the PDF for in another window

Comparative study between macrotribology and nanotribology

E. Liu; B. Blanpain; J.-P. Celis; J. R. Roos

J. Appl. Phys. 84, 4859–4865 (1998) https://doi.org/10.1063/1.368728

Abstract

View articletitled, Comparative study between macrotribology and nanotribology

Open the PDF for in another window

The dynamic compressive strength of aluminas

N. H. Murray; N. K. Bourne; Z. Rosenberg

J. Appl. Phys. 84, 4866–4871 (1998) https://doi.org/10.1063/1.368729

Abstract

View articletitled, The dynamic compressive strength of aluminas

Open the PDF for in another window

Effect of interphase layers on thermal stresses within an elliptical inclusion

C. Q. Ru

J. Appl. Phys. 84, 4872–4879 (1998) https://doi.org/10.1063/1.368730

Abstract

View articletitled, Effect of interphase layers on thermal stresses within an elliptical inclusion

Open the PDF for in another window

Direct visualization of the dynamic behavior of a water meniscus by scanning electron microscopy

Michael Schenk; Manfred Füting; Rudolf Reichelt

J. Appl. Phys. 84, 4880–4884 (1998) https://doi.org/10.1063/1.368731

Abstract

View articletitled, Direct visualization of the dynamic behavior of a water meniscus by scanning electron microscopy

Open the PDF for in another window

Yield point of as-grown and predeformed GaAs:Zn

Hans Georg Brion; Hans Siethoff

J. Appl. Phys. 84, 4885–4890 (1998) https://doi.org/10.1063/1.368732

Abstract

View articletitled, Yield point of as-grown and predeformed GaAs:Zn

Open the PDF for in another window

Density functional theory for calculation of elastic properties of orthorhombic crystals: Application to ${TiSi}_{2}$

P. Ravindran; Lars Fast; P. A. Korzhavyi; B. Johansson; J. Wills; O. Eriksson

J. Appl. Phys. 84, 4891–4904 (1998) https://doi.org/10.1063/1.368733

Abstract

View articletitled, Density functional theory for calculation of elastic properties of orthorhombic crystals: Application to <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiSi</mi><mrow><mn>2</mn></mrow></msub></math>

Open the PDF for in another window

Grain refinement and growth instability in undercooled alloys at low undercooling

A. M. Mullis; R. F. Cochrane

J. Appl. Phys. 84, 4905–4910 (1998) https://doi.org/10.1063/1.368734

Abstract

View articletitled, Grain refinement and growth instability in undercooled alloys at low undercooling

Open the PDF for in another window

Bonding at the ${CdSe/SiO}_{x}$ $(x=0,1,2)$ interfaces

D. P. Masson; D. Landheer; T. Quance; J. E. Hulse

J. Appl. Phys. 84, 4911–4920 (1998) https://doi.org/10.1063/1.368735

Abstract

View articletitled, Bonding at the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CdSe/SiO</mi><mrow><mi>x</mi></mrow></msub></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(x=0,1,2)</mtext></math> interfaces

Open the PDF for in another window

Characterization of three-dimensional grain boundary topography in a ${YBa}_{2} {Cu}_{3} O_{7−d}$ thin film bicrystal grown on a ${SrTiO}_{3}$ substrate

J. Ayache; A. Thorel; J. Lesueur; U. Dahmen

J. Appl. Phys. 84, 4921–4928 (1998) https://doi.org/10.1063/1.368736

Abstract

View articletitled, Characterization of three-dimensional grain boundary topography in a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−d</mtext></mrow></msub></math> thin film bicrystal grown on a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> substrate

Open the PDF for in another window

Carbon and group II acceptor coimplantation in GaAs

R. Morton; S. S. Lau; D. B. Poker; P. K. Chu; K. K. Fung; N. Wang

J. Appl. Phys. 84, 4929–4934 (1998) https://doi.org/10.1063/1.368737

Abstract

View articletitled, Carbon and group II acceptor coimplantation in GaAs

Open the PDF for in another window

A combined x-ray specular reflectivity and spectroscopic ellipsometry study of ${CeO}_{2}$ /yttria-stabilized-zirconia bilayers on Si(100) substrates

L. Méchin; A. Chabli; F. Bertin; M. Burdin; G. Rolland; C. Vannuffel; J.-C. Villégier

J. Appl. Phys. 84, 4935–4940 (1998) https://doi.org/10.1063/1.368738

Abstract

View articletitled, A combined x-ray specular reflectivity and spectroscopic ellipsometry study of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CeO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>/yttria-stabilized-zirconia bilayers on Si(100) substrates

Open the PDF for in another window

Ti concentration effect on adhesive energy at Cu/TiW interface

Akira Furuya; Yoshio Ohshita

J. Appl. Phys. 84, 4941–4944 (1998) https://doi.org/10.1063/1.368805

Abstract

View articletitled, Ti concentration effect on adhesive energy at Cu/TiW interface

Open the PDF for in another window

CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

Effects of heat treatment on the electronic structure of nanometric Si/C/N powders by x-ray photoelectron spectroscopy

C. Senemaud; A. Gheorghiu-de La Rocque; G. Dufour; N. Herlin

J. Appl. Phys. 84, 4945–4950 (1998) https://doi.org/10.1063/1.368797

Abstract

View articletitled, Effects of heat treatment on the electronic structure of nanometric Si/C/N powders by x-ray photoelectron spectroscopy

Open the PDF for in another window

First-principles study on electronic and elastic properties of BN, AlN, and GaN

Kazuhiro Shimada; Takayuki Sota; Katsuo Suzuki

J. Appl. Phys. 84, 4951–4958 (1998) https://doi.org/10.1063/1.368739

Abstract

View articletitled, First-principles study on electronic and elastic properties of BN, AlN, and GaN

Open the PDF for in another window

Quasiballistic transport in GaAs-based heterojunction and homojunction bipolar transistors

A. R. St. Denis; D. L. Pulfrey

J. Appl. Phys. 84, 4959–4965 (1998) https://doi.org/10.1063/1.368740

Abstract

View articletitled, Quasiballistic transport in GaAs-based heterojunction and homojunction bipolar transistors

Open the PDF for in another window

Improved quantitative mobility spectrum analysis for Hall characterization

I. Vurgaftman; J. R. Meyer; C. A. Hoffman; D. Redfern; J. Antoszewski; L. Faraone; J. R. Lindemuth

J. Appl. Phys. 84, 4966–4973 (1998) https://doi.org/10.1063/1.368741

Abstract

View articletitled, Improved quantitative mobility spectrum analysis for Hall characterization

Open the PDF for in another window

Photomodulated electron-spin resonance in amorphous silicon

K. Hattori; Y. Ota; K. Sato; H. Okamoto

J. Appl. Phys. 84, 4974–4978 (1998) https://doi.org/10.1063/1.368742

Abstract

View articletitled, Photomodulated electron-spin resonance in amorphous silicon

Open the PDF for in another window

Energy considerations during the growth of a molten filament in metal-to-metal amorphous-silicon antifuses

N. Vasudevan; R. B. Fair; H. Z. Massoud

J. Appl. Phys. 84, 4979–4983 (1998) https://doi.org/10.1063/1.368743

Abstract

View articletitled, Energy considerations during the growth of a molten filament in metal-to-metal amorphous-silicon antifuses

Open the PDF for in another window

Subpicosecond hot carrier cooling in amorphous silicon

J. O. White; S. Cuzeau; D. Hulin; R. Vanderhaghen

J. Appl. Phys. 84, 4984–4991 (1998) https://doi.org/10.1063/1.368744

Abstract

View articletitled, Subpicosecond hot carrier cooling in amorphous silicon

Open the PDF for in another window

Electrical conduction in exploded segmented wires

Clinton E. Hollandsworth; John D. Powell; Michael J. Keele; Charles R. Hummer

J. Appl. Phys. 84, 4992–5000 (1998) https://doi.org/10.1063/1.368745

Abstract

View articletitled, Electrical conduction in exploded segmented wires

Open the PDF for in another window

Density of band-gap traps in polycrystalline films from photoconductivity transients using an improved Laplace transform method

S. A. Studenikin; Nickolay Golego; Michael Cocivera

J. Appl. Phys. 84, 5001–5004 (1998) https://doi.org/10.1063/1.368746

Abstract

View articletitled, Density of band-gap traps in polycrystalline films from photoconductivity transients using an improved Laplace transform method

Open the PDF for in another window

Schottky barrier effects in the electronic conduction of sol–gel derived lead zirconate titanate thin film capacitors

Y. S. Yang; S. J. Lee; S. H. Kim; B. G. Chae; M. S. Jang

J. Appl. Phys. 84, 5005–5011 (1998) https://doi.org/10.1063/1.368747

Abstract

View articletitled, Schottky barrier effects in the electronic conduction of sol–gel derived lead zirconate titanate thin film capacitors

Open the PDF for in another window

Microscopic analysis of the influence of strain and band-gap offsets on noise characteristics in ${Si}_{1−x} {Ge}_{x} / Si$ heterojunctions

M. J. Martı́n Martinez; D. Pardo; J. E. Velázquez

J. Appl. Phys. 84, 5012–5020 (1998) https://doi.org/10.1063/1.368748

Abstract

View articletitled, Microscopic analysis of the influence of strain and band-gap offsets on noise characteristics in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> heterojunctions

Open the PDF for in another window

Operation and design of metal-oxide tunnel transistors

R. W. Rendell; F. A. Buot; E. S. Snow; P. M. Campbell; D. Park; C. R. K. Marrian; R. Magno

J. Appl. Phys. 84, 5021–5031 (1998) https://doi.org/10.1063/1.368749

Abstract

View articletitled, Operation and design of metal-oxide tunnel transistors

Open the PDF for in another window

Simulation of a quantum-dot flash memory

G. Iannaccone; A. Trellakis; U. Ravaioli

J. Appl. Phys. 84, 5032–5036 (1998) https://doi.org/10.1063/1.368750

Abstract

View articletitled, Simulation of a quantum-dot flash memory

Open the PDF for in another window

I–V characteristics of resonant tunneling devices: Difference equation method

Srinivasan Krishnamurthy; A.-B. Chen; A. Sher

J. Appl. Phys. 84, 5037–5045 (1998) https://doi.org/10.1063/1.368751

Abstract

View articletitled, I–V characteristics of resonant tunneling devices: Difference equation method

Open the PDF for in another window

Structural and electronic properties of boron nitride thin films containing silicon

C. Ronning; A. D. Banks; B. L. McCarson; R. Schlesser; Z. Sitar; R. F. Davis; B. L. Ward; R. J. Nemanich

J. Appl. Phys. 84, 5046–5051 (1998) https://doi.org/10.1063/1.368752

Abstract

View articletitled, Structural and electronic properties of boron nitride thin films containing silicon

Open the PDF for in another window

Single electron tunneling and suppression of short-channel effects in submicron silicon transistors

M. G. Peters; S. G. den Hartog; J. I. Dijkhuis; O. J. A. Buyk; L. W. Molenkamp

J. Appl. Phys. 84, 5052–5056 (1998) https://doi.org/10.1063/1.368753

Abstract

View articletitled, Single electron tunneling and suppression of short-channel effects in submicron silicon transistors

Open the PDF for in another window

Noise characteristics of radio frequency sputtered amorphous silicon carbide films

W. K. Choi; L. J. Han; L. G. Chua

J. Appl. Phys. 84, 5057–5059 (1998) https://doi.org/10.1063/1.368798

Abstract

View articletitled, Noise characteristics of radio frequency sputtered amorphous silicon carbide films

Open the PDF for in another window

Self-consistent analysis of persistent photoconductivity data in Si δ-doped ${Al}_{x} {Ga}_{1−x} As$ $(x=0.32)$ superlattices

H. Mejri; A. Ben Jazia; H. Maaref; B. Etienne; C. Priester

J. Appl. Phys. 84, 5060–5063 (1998) https://doi.org/10.1063/1.368806

Abstract

View articletitled, Self-consistent analysis of persistent photoconductivity data in Si δ-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(x=0.32)</mtext></math> superlattices

Open the PDF for in another window

Enhanced anticrossing in an asymmetric double-well GaAs/AlAs superlattice with two kinds of Stark-ladder states

Kenji Kawashima; Kenzo Fujiwara; Teiji Yamamoto

J. Appl. Phys. 84, 5064–5069 (1998) https://doi.org/10.1063/1.368754

Abstract

View articletitled, Enhanced anticrossing in an asymmetric double-well GaAs/AlAs superlattice with two kinds of Stark-ladder states

Open the PDF for in another window

Stress-induced leakage current reduction by a low field of opposite polarity to the stress field

A. Meinertzhagen; C. Petit; M. Jourdain; F. Mondon

J. Appl. Phys. 84, 5070–5079 (1998) https://doi.org/10.1063/1.368755

Abstract

View articletitled, Stress-induced leakage current reduction by a low field of opposite polarity to the stress field

Open the PDF for in another window

c-axis resistivity of Hg-1201 single crystals

G. Villard; A. Daignere; A. Maignan; A. Ruyter

J. Appl. Phys. 84, 5080–5083 (1998) https://doi.org/10.1063/1.368756

Abstract

View articletitled, c-axis resistivity of Hg-1201 single crystals

Open the PDF for in another window

High-rate deposition of ${YBa}_{2} {Cu}_{3} O_{7−x}$ films by hot cluster epitaxy

Yuzuru Takamura; Norio Yamaguchi; Kazuo Terashima; Toyonobu Yoshida

J. Appl. Phys. 84, 5084–5088 (1998) https://doi.org/10.1063/1.368757

Abstract

View articletitled, High-rate deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−x</mtext></mrow></msub></math> films by hot cluster epitaxy

Open the PDF for in another window

Spatially resolved studies of chemical composition, critical temperature, and critical current density of a ${YBa}_{2} {Cu}_{3} O_{7−δ}$ thin film

M. E. Gaevski; A. V. Bobyl; D. V. Shantsev; R. A. Suris; V. V. Tret’yakov; Y. M. Galperin; T. H. Johansen

J. Appl. Phys. 84, 5089–5096 (1998) https://doi.org/10.1063/1.368758

Abstract

View articletitled, Spatially resolved studies of chemical composition, critical temperature, and critical current density of a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7−δ</mi></mrow></msub></math> thin film

Open the PDF for in another window

Exchange anisotropy in epitaxial ${Fe}_{3} O_{4} / CoO$ and ${Fe}_{3} O_{4} / {Co}_{x} {Fe}_{3−x} O_{4}$ bilayers grown by pulsed laser deposition

C. A. Kleint; M. K. Krause; R. Höhne; T. Walter; H. C. Semmelhack; M. Lorenz; P. Esquinazi

J. Appl. Phys. 84, 5097–5104 (1998) https://doi.org/10.1063/1.368759

Abstract

Open the PDF for in another window

Relation of coercivity to net magnetization in ferrimagnetically ordered Co/Gd multilayers

A. B. Chizhik; S. L. Gnatchenko; D. N. Merenkov; L. T. Baczewski; A. Wawro; H. Szymczak; H. Gamari-Seale

J. Appl. Phys. 84, 5105–5107 (1998) https://doi.org/10.1063/1.368760

Abstract

View articletitled, Relation of coercivity to net magnetization in ferrimagnetically ordered Co/Gd multilayers

Open the PDF for in another window

Effect of the Si/B ratio on the magnetic anisotropy distribution of ${Fe}_{73.5} {Si}_{22.5−x} B_{x} {Cu}_{1} {Nb}_{3}$ $(x=7,9,16)$ alloys along nanocrystallization

V. Franco; C. F. Conde; A. Conde

J. Appl. Phys. 84, 5108–5113 (1998) https://doi.org/10.1063/1.368807

Abstract

View articletitled, Effect of the Si/B ratio on the magnetic anisotropy distribution of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mtext>73.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>22.5−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>1</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mn>3</mn></mrow></msub></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(x=7,9,16)</mtext></math> alloys along nanocrystallization

Open the PDF for in another window

A model of interaction effects in granular magnetic solids

M. El-Hilo; R. W. Chantrell; K. O’Grady

J. Appl. Phys. 84, 5114–5122 (1998) https://doi.org/10.1063/1.368761

Abstract

View articletitled, A model of interaction effects in granular magnetic solids

Open the PDF for in another window

Quantum theory for the temperature dependences of magnetic configurations in magnetic ultrathin films

Liangbin Hu; Ruibao Tao

J. Appl. Phys. 84, 5123–5128 (1998) https://doi.org/10.1063/1.368762

Abstract

View articletitled, Quantum theory for the temperature dependences of magnetic configurations in magnetic ultrathin films

Open the PDF for in another window

Low temperature irreversibilities in the magnetothermal behavior of ${Gd}_{2} {CuO}_{4}$

P. W. Klamut; K. Rogacki; A. Sikora; B. Dabrowski

J. Appl. Phys. 84, 5129–5133 (1998) https://doi.org/10.1063/1.368763

Abstract

View articletitled, Low temperature irreversibilities in the magnetothermal behavior of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Gd</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">CuO</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math>

Open the PDF for in another window

CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

Amorphous ferroelectric $({Ba}_{0.67} {Sr}_{0.33}) {Ti}_{1.02} O_{3}$ thin films with enhanced $H_{2}$ induced interfacial polarization potential

W. Zhu; O. K. Tan; X. Yao

J. Appl. Phys. 84, 5134–5139 (1998) https://doi.org/10.1063/1.368764

Abstract

View articletitled, Amorphous ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mtext>0.67</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.33</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1.02</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> thin films with enhanced <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub></math> induced interfacial polarization potential

Open the PDF for in another window

Single crystal growth and ferroelectric properties of $α({Ba}_{1−x} {Sr}_{x}) {Nb}_{2} O_{6} :β({Na}_{1−y} K_{y}) {NbO}_{3}$ solid solutions

Yijian Jiang; Ruyan Guo; A. S. Bhalla

J. Appl. Phys. 84, 5140–5146 (1998) https://doi.org/10.1063/1.368808

Abstract

Open the PDF for in another window

Phase development and electrical property analysis of pulsed laser deposited ${Pb(Mg}_{1/3} {Nb}_{2/3} {)O}_{3} {–PbTiO}_{3}$ (70/30) epitaxial thin films

J.-P. Maria; W. Hackenberger; S. Trolier-McKinstry

J. Appl. Phys. 84, 5147–5154 (1998) https://doi.org/10.1063/1.368809

Abstract

Open the PDF for in another window

Time dependent dielectric breakdown of paraelectric barium-strontium-titanate thin film capacitors for memory device applications

Shu-chun Huang; Hong-ming Chen; Shich Chuan Wu; Joseph Ya-min Lee

J. Appl. Phys. 84, 5155–5157 (1998) https://doi.org/10.1063/1.368765

Abstract

View articletitled, Time dependent dielectric breakdown of paraelectric barium-strontium-titanate thin film capacitors for memory device applications

Open the PDF for in another window

Determination of homogeneity of pure and doped lithium niobate by second harmonic generation temperature phase matching

Chr. a. d. Horst; K.-U. Kasemir; K. Betzler

J. Appl. Phys. 84, 5158–5162 (1998) https://doi.org/10.1063/1.368766

Abstract

View articletitled, Determination of homogeneity of pure and doped lithium niobate by second harmonic generation temperature phase matching

Open the PDF for in another window

First and second order velocity shifts and reflection coefficients for periodic interdigital transducers by boundary condition matching

C. Thoma; Y. Hahn

J. Appl. Phys. 84, 5163–5174 (1998) https://doi.org/10.1063/1.368767

Abstract

View articletitled, First and second order velocity shifts and reflection coefficients for periodic interdigital transducers by boundary condition matching

Open the PDF for in another window

Stark ladders as tunable far-infrared emitters

K. Donovan; P. Harrison; R. W. Kelsall

J. Appl. Phys. 84, 5175–5179 (1998) https://doi.org/10.1063/1.368810

Abstract

View articletitled, Stark ladders as tunable far-infrared emitters

Open the PDF for in another window

Second harmonic generation capabilities of ion implanted ${LiNbO}_{3}$ waveguides

J. Rams; J. Olivares; P. J. Chandler; P. D. Townsend

J. Appl. Phys. 84, 5180–5183 (1998) https://doi.org/10.1063/1.368811

Abstract

View articletitled, Second harmonic generation capabilities of ion implanted <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mn>3</mn></mrow></msub></math> waveguides

Open the PDF for in another window

Exponential absorption edge and disorder in Column IV amorphous semiconductors

A. R. Zanatta; M. Mulato; I. Chambouleyron

J. Appl. Phys. 84, 5184–5190 (1998) https://doi.org/10.1063/1.368768

Abstract

View articletitled, Exponential absorption edge and disorder in Column IV amorphous semiconductors

Open the PDF for in another window

Influence of Zn/In codoping on the optical properties of lithium niobate

K. Kasemir; K. Betzler; B. Matzas; B. Tiegel; T. Wahlbrink; M. Wöhlecke; B. Gather; N. Rubinina; T. Volk

J. Appl. Phys. 84, 5191–5193 (1998) https://doi.org/10.1063/1.368769

Abstract

View articletitled, Influence of Zn/In codoping on the optical properties of lithium niobate

Open the PDF for in another window

A prism coupler technique for characterizing thin film II–VI semiconductor systems

F. C. Peiris; S. Lee; U. Bindley; J. K. Furdyna

J. Appl. Phys. 84, 5194–5197 (1998) https://doi.org/10.1063/1.368770

Abstract

View articletitled, A prism coupler technique for characterizing thin film II–VI semiconductor systems

Open the PDF for in another window

Micro-Raman and photoluminescence investigation of ${Zn}_{x} {Cd}_{1−x} Se$ thin film under high pressure

W. S. Li; Z. X. Shen; D. Z. Shen; X. W. Fan

J. Appl. Phys. 84, 5198–5201 (1998) https://doi.org/10.1063/1.368771

Abstract

View articletitled, Micro-Raman and photoluminescence investigation of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">Se</mi></math> thin film under high pressure

Open the PDF for in another window

Optical constants of ${CuGaSe}_{2}$ and ${CuInSe}_{2}$

Takahiro Kawashima; Sadao Adachi; Hideto Miyake; Koichi Sugiyama

J. Appl. Phys. 84, 5202–5209 (1998) https://doi.org/10.1063/1.368772

Abstract

View articletitled, Optical constants of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuGaSe</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuInSe</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>

Open the PDF for in another window

Characterization of ${Si}^{+}$ ion-implanted ${SiO}_{2}$ films and silica glasses

Soumyendu Guha

J. Appl. Phys. 84, 5210–5217 (1998) https://doi.org/10.1063/1.368812

Abstract

View articletitled, Characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">+</mi></mrow></msup></math> ion-implanted <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films and silica glasses

Open the PDF for in another window

Interactive kinetics in thermally stimulated luminescence and conductivity and its effect on the trap depth determination

A. Opanowicz

J. Appl. Phys. 84, 5218–5228 (1998) https://doi.org/10.1063/1.368773

Abstract

View articletitled, Interactive kinetics in thermally stimulated luminescence and conductivity and its effect on the trap depth determination

Open the PDF for in another window

A study of the photothermal signal produced by a series of subsurface cylinders in opaque materials

A. Sanchez-Lavega; A. Salazar; J. M. Terrón; A. Ocáriz

J. Appl. Phys. 84, 5229–5237 (1998) https://doi.org/10.1063/1.368774

Abstract

View articletitled, A study of the photothermal signal produced by a series of subsurface cylinders in opaque materials

Open the PDF for in another window

Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

B. L. Ward; O.-H. Nam; J. D. Hartman; S. L. English; B. L. McCarson; R. Schlesser; Z. Sitar; R. F. Davis; R. J. Nemanich

J. Appl. Phys. 84, 5238–5242 (1998) https://doi.org/10.1063/1.368775

Abstract

View articletitled, Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

Open the PDF for in another window

CROSS-DISCIPLINARY PHYSICS (PACS 81-98)

Thermal dissociation process of hydrogen atoms in plasma-enhanced chemical vapor deposited silicon nitride films

Masahiko Maeda; Manabu Itsumi

J. Appl. Phys. 84, 5243–5247 (1998) https://doi.org/10.1063/1.368813

Abstract

View articletitled, Thermal dissociation process of hydrogen atoms in plasma-enhanced chemical vapor deposited silicon nitride films

Open the PDF for in another window

Cleaning of AlN and GaN surfaces

S. W. King; J. P. Barnak; M. D. Bremser; K. M. Tracy; C. Ronning; R. F. Davis; R. J. Nemanich

J. Appl. Phys. 84, 5248–5260 (1998) https://doi.org/10.1063/1.368814

Abstract

View articletitled, Cleaning of AlN and GaN surfaces

Open the PDF for in another window

Texture development mechanisms in ion beam assisted deposition

L. Dong; D. J. Srolovitz

J. Appl. Phys. 84, 5261–5269 (1998) https://doi.org/10.1063/1.368794

Abstract

View articletitled, Texture development mechanisms in ion beam assisted deposition

Open the PDF for in another window

Formation and size control of a Ni cluster by plasma gas condensation

Takehiko Hihara; Kenji Sumiyama

J. Appl. Phys. 84, 5270–5276 (1998) https://doi.org/10.1063/1.368776

Abstract

View articletitled, Formation and size control of a Ni cluster by plasma gas condensation

Open the PDF for in another window

Influence of process pressure on the growth of hydrocarbon films under direct dc bias in an electron cyclotron resonance plasma

Rusli; S. F. Yoon; H. Yang; J. Ahn; Q. Zhang; Y. S. Wu; W. L. New

J. Appl. Phys. 84, 5277–5282 (1998) https://doi.org/10.1063/1.368815

Abstract

View articletitled, Influence of process pressure on the growth of hydrocarbon films under direct dc bias in an electron cyclotron resonance plasma

Open the PDF for in another window

The role of size effects on the crystallization of amorphous Ge in contact with Bi nanocrystals

N. Wilson; A. K. Petford-Long; R. C. Doole; R. Serna; C. N. Afonso

J. Appl. Phys. 84, 5283–5290 (1998) https://doi.org/10.1063/1.368777

Abstract

View articletitled, The role of size effects on the crystallization of amorphous Ge in contact with Bi nanocrystals

Open the PDF for in another window

Application of photoreflectance spectroscopy to the study of interface roughness in $InGaAs/InAlAs$ heterointerfaces

Catherine Bru-Chevallier; Youssef Baltagi; Gérard Guillot; Kyushik Hong; Dimitris Pavlidis

J. Appl. Phys. 84, 5291–5295 (1998) https://doi.org/10.1063/1.368816

Abstract

View articletitled, Application of photoreflectance spectroscopy to the study of interface roughness in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">InGaAs/InAlAs</mi></math> heterointerfaces

Open the PDF for in another window

In situ ellipsometric characterization of ${SiN}_{x}$ films grown by laser ablation

E. C. Samano; R. Machorro; G. Soto; L. Cota-Araiza

J. Appl. Phys. 84, 5296–5305 (1998) https://doi.org/10.1063/1.368778

Abstract

View articletitled, In situ ellipsometric characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiN</mi><mrow><mi>x</mi></mrow></msub></math> films grown by laser ablation

Open the PDF for in another window

A numerical study of operational characteristics of organic light-emitting diodes

Y. Kawabe; M. M. Morrell; G. E. Jabbour; S. E. Shaheen; B. Kippelen; N. Peyghambarian

J. Appl. Phys. 84, 5306–5314 (1998) https://doi.org/10.1063/1.368779

Abstract

View articletitled, A numerical study of operational characteristics of organic light-emitting diodes

Open the PDF for in another window

An analysis of the role of high energy neutral bombardment in longthrow/collimated sputtering of refractory metal barrier layers

T. Smy; R. V. Joshi; N. Tait; S. K. Dew; M. J. Brett

J. Appl. Phys. 84, 5315–5325 (1998) https://doi.org/10.1063/1.368780

Abstract

View articletitled, An analysis of the role of high energy neutral bombardment in longthrow/collimated sputtering of refractory metal barrier layers

Open the PDF for in another window

Temperature dependence of the barrier height of $Pt /n- GaAs$ Schottky diodes

H.-W. Hübers; H. P. Röser

J. Appl. Phys. 84, 5326–5330 (1998) https://doi.org/10.1063/1.368781

Abstract

View articletitled, Temperature dependence of the barrier height of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pt</mi><mi xmlns="">/n-</mi><mi mathvariant="normal" xmlns="">GaAs</mi></math> Schottky diodes

Open the PDF for in another window

Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization

F. Foulon; P. Bergonzo; C. Borel; R. D. Marshall; C. Jany; L. Besombes; A. Brambilla; D. Riedel; L. Museur; M. C. Castex; A. Gicquel

J. Appl. Phys. 84, 5331–5336 (1998) https://doi.org/10.1063/1.368782

Abstract

View articletitled, Solar blind chemically vapor deposited diamond detectors for vacuum ultraviolet pulsed light-source characterization

Open the PDF for in another window

Minority carrier capture at DX centers in AlGaSb Schottky diodes

E. Gombia; R. Mosca; S. Franchi; C. Ghezzi; R. Magnanini

J. Appl. Phys. 84, 5337–5341 (1998) https://doi.org/10.1063/1.368783

Abstract

View articletitled, Minority carrier capture at DX centers in AlGaSb Schottky diodes

Open the PDF for in another window

COMMUNICATIONS

Spectroellipsometry and electroreflectance of PbS

Hideyuki Kanazawa; Sadao Adachi

J. Appl. Phys. 84, 5342–5344 (1998) https://doi.org/10.1063/1.368784

Abstract

View articletitled, Spectroellipsometry and electroreflectance of PbS

Open the PDF for in another window

A study of deep centers in ${Zn}_{1−x} {Mg}_{x} Se$ crystals using deep-level transient spectroscopy

R. Beyer; H. Burghardt; F. Firszt; D. R. T. Zahn

J. Appl. Phys. 84, 5345–5347 (1998) https://doi.org/10.1063/1.368785

Abstract

View articletitled, A study of deep centers in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Se</mi></math> crystals using deep-level transient spectroscopy

Open the PDF for in another window

Spectroscopic assessment of ${LiTaO}_{3} : {Tm}^{3+}$ as a potential diode-pumped laser near 1.9 μm

I. Sokólska; W. Ryba-Romanowski; S. Goła̧b; M. Baba; T. Łukasiewicz

J. Appl. Phys. 84, 5348–5350 (1998) https://doi.org/10.1063/1.368786

Abstract

View articletitled, Spectroscopic assessment of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiTaO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi xmlns="">:</mi><msup xmlns=""><mi mathvariant="normal">Tm</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math> as a potential diode-pumped laser near 1.9 μm

Open the PDF for in another window

Photoconductivity in self-organized InAs quantum dots

J. C. Fan; Y. J. Lin; Y. F. Chen; M. C. Chen; H. H. Lin

J. Appl. Phys. 84, 5351–5353 (1998) https://doi.org/10.1063/1.368787

Abstract

View articletitled, Photoconductivity in self-organized InAs quantum dots

Open the PDF for in another window

Alignment of two-valley resonance levels and $I–V$ characteristics of GaAs/AlAs resonant tunneling diodes

Srinivasan Krishnamurthy; A.-B. Chen; A. Sher

J. Appl. Phys. 84, 5354–5356 (1998) https://doi.org/10.1063/1.368788

Abstract

View articletitled, Alignment of two-valley resonance levels and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">I–V</mi></math> characteristics of GaAs/AlAs resonant tunneling diodes

Open the PDF for in another window

Theoretical investigation of mid-infrared interband cascade lasers based on type II quantum wells

Yao-Ming Mu; Rui Q. Yang

J. Appl. Phys. 84, 5357–5359 (1998) https://doi.org/10.1063/1.368789

Abstract

View articletitled, Theoretical investigation of mid-infrared interband cascade lasers based on type II quantum wells

Open the PDF for in another window

Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector

T. H. Gfroerer; E. A. Cornell; M. W. Wanlass

J. Appl. Phys. 84, 5360–5362 (1998) https://doi.org/10.1063/1.368790

Abstract

View articletitled, Efficient directional spontaneous emission from an InGaAs/InP heterostructure with an integral parabolic reflector

Open the PDF for in another window

Analysis of the Fiske modes in a short Josephson junction with nonuniform critical current density

Umberto Gambardella; Giuseppe Celentano; Vincenzo Boffa; Sandro Pace

J. Appl. Phys. 84, 5363–5365 (1998) https://doi.org/10.1063/1.368791

Abstract

View articletitled, Analysis of the Fiske modes in a short Josephson junction with nonuniform critical current density

Open the PDF for in another window

Controlling magnetic and transport properties of granular alloys through Joule heating

F. C. S. da Silva; E. F. Ferrari; M. Knobel

J. Appl. Phys. 84, 5366–5368 (1998) https://doi.org/10.1063/1.368792

Abstract

View articletitled, Controlling magnetic and transport properties of granular alloys through Joule heating

Open the PDF for in another window

Strong interface effects in graded ${SiO}_{2} {/Si/SiO}_{2}$ quantum wells

J. S. de Sousa; G. A. Farias; V. N. Freire; E. F. da Silva, Jr.

J. Appl. Phys. 84, 5369–5371 (1998) https://doi.org/10.1063/1.368818

Abstract

View articletitled, Strong interface effects in graded <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/Si/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> quantum wells

Open the PDF for in another window

ERRATA

Erratum: “Numerical study of the role of a background gas and system geometry in pulsed laser deposition” [J. Appl. Phys. 83, 6050 (1998)]

T. E. Itina; A. A. Katassonov; W. Marine; M. Autric

J. Appl. Phys. 84, 5372 (1998) https://doi.org/10.1063/1.368793

View articletitled, Erratum: “Numerical study of the role of a background gas and system geometry in pulsed laser deposition” [J. Appl. Phys. 83, 6050 (1998)]

Open the PDF for in another window

Issues

GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)

CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

CROSS-DISCIPLINARY PHYSICS (PACS 81-98)

COMMUNICATIONS

ERRATA

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only