Skip Nav Destination

Issues

Select Decade

Select Year

Issue

GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)

Engineering the strain field for the control of quantum confinement: An analytical model for arbitrary shape nanostructures

M. Mazzer; M. De Giorgi; R. Cingolani; G. Porello; F. Rossi; E. Molinari

J. Appl. Phys. 84, 3437–3441 (1998) https://doi.org/10.1063/1.368517

Abstract

View articletitled, Engineering the strain field for the control of quantum confinement: An analytical model for arbitrary shape nanostructures

Open the PDF for in another window

Electron attachment to photofragments and Rydberg states in laser-irradiated ${CCl}_{2} F_{2}$

Lal A. Pinnaduwage; Panos G. Datskos; Cumali Tav

J. Appl. Phys. 84, 3442–3450 (1998) https://doi.org/10.1063/1.368518

Abstract

View articletitled, Electron attachment to photofragments and Rydberg states in laser-irradiated <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CCl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>

Open the PDF for in another window

CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

Theory of third harmonic generation in random composites of nonlinear dielectrics

P. M. Hui; P. Cheung; D. Stroud

J. Appl. Phys. 84, 3451–3458 (1998) https://doi.org/10.1063/1.368519

Abstract

View articletitled, Theory of third harmonic generation in random composites of nonlinear dielectrics

Open the PDF for in another window

Hot-optical-phonon effects on electron relaxation in an AlGaAs/GaAs quantum cascade laser structure

G. Paulavičius; V. Mitin; M. A. Stroscio

J. Appl. Phys. 84, 3459–3466 (1998) https://doi.org/10.1063/1.368520

Abstract

View articletitled, Hot-optical-phonon effects on electron relaxation in an AlGaAs/GaAs quantum cascade laser structure

Open the PDF for in another window

Optically pumped mid-infrared vibrational hydrogen chloride laser

Harold C. Miller; John McCord; Gordon D. Hager; Steven J. Davis; William J. Kessler; David B. Oakes

J. Appl. Phys. 84, 3467–3473 (1998) https://doi.org/10.1063/1.368521

Abstract

View articletitled, Optically pumped mid-infrared vibrational hydrogen chloride laser

Open the PDF for in another window

Suitability of drift nonlinearity in Si, GaAs, and InP for high-power frequency converters with a 1 THz radiation output

R. Brazis; R. Raguotis; M. R. Siegrist

J. Appl. Phys. 84, 3474–3482 (1998) https://doi.org/10.1063/1.368522

Abstract

View articletitled, Suitability of drift nonlinearity in Si, GaAs, and InP for high-power frequency converters with a 1 THz radiation output

Open the PDF for in another window

Wavelength selectivity of the complex grating structure formed in a photorefractive phase conjugator

Martin Lo/bel

J. Appl. Phys. 84, 3483–3490 (1998) https://doi.org/10.1063/1.368523

Abstract

View articletitled, Wavelength selectivity of the complex grating structure formed in a photorefractive phase conjugator

Open the PDF for in another window

Heat source distribution, vertical structure, and coating influences on the temperature of operating 0.98 μm laser diodes: Photothermal reflectance measurements

L. C. O. Dacal; A. M. Mansanares; E. C. da Silva

J. Appl. Phys. 84, 3491–3499 (1998) https://doi.org/10.1063/1.368524

Abstract

View articletitled, Heat source distribution, vertical structure, and coating influences on the temperature of operating 0.98 μm laser diodes: Photothermal reflectance measurements

Open the PDF for in another window

Cumulative second-harmonic generation accompanying nonlinear shear horizontal mode propagation in a solid plate

Deng Mingxi

J. Appl. Phys. 84, 3500–3505 (1998) https://doi.org/10.1063/1.368525

Abstract

View articletitled, Cumulative second-harmonic generation accompanying nonlinear shear horizontal mode propagation in a solid plate

Open the PDF for in another window

Numerical model of a transferred plasma arc

S. M. Aithal; V. V. Subramaniam; J. Pagan; R. W. Richardson

J. Appl. Phys. 84, 3506–3517 (1998) https://doi.org/10.1063/1.368526

Abstract

View articletitled, Numerical model of a transferred plasma arc

Open the PDF for in another window

A theoretical model for gas metal arc welding and gas tungsten arc welding. I.

J. Haidar

J. Appl. Phys. 84, 3518–3529 (1998) https://doi.org/10.1063/1.368527

Abstract

View articletitled, A theoretical model for gas metal arc welding and gas tungsten arc welding. I.

Open the PDF for in another window

Predictions of metal droplet formation in gas metal arc welding. II.

J. Haidar

J. Appl. Phys. 84, 3530–3540 (1998) https://doi.org/10.1063/1.368528

Abstract

View articletitled, Predictions of metal droplet formation in gas metal arc welding. II.

Open the PDF for in another window

Low frequency oscillations in a stationary plasma thruster

J. P. Boeuf; L. Garrigues

J. Appl. Phys. 84, 3541–3554 (1998) https://doi.org/10.1063/1.368529

Abstract

View articletitled, Low frequency oscillations in a stationary plasma thruster

Open the PDF for in another window

CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

Effect of the silicon/oxide interface on interstitials: Di-interstitial recombination

M. E. Law; Y. M. Haddara; K. S. Jones

J. Appl. Phys. 84, 3555–3560 (1998) https://doi.org/10.1063/1.368530

Abstract

View articletitled, Effect of the silicon/oxide interface on interstitials: Di-interstitial recombination

Open the PDF for in another window

Thermal donor formation and annihilation at temperatures above 500 °C in Czochralski-grown Si

W. Götz; G. Pensl; W. Zulehner; R. C. Newman; S. A. McQuaid

J. Appl. Phys. 84, 3561–3568 (1998) https://doi.org/10.1063/1.368586

Abstract

View articletitled, Thermal donor formation and annihilation at temperatures above 500 °C in Czochralski-grown Si

Open the PDF for in another window

Infrared studies of defects formed during postirradiation anneals of Czochralski silicon

C. A. Londos; N. V. Sarlis; L. G. Fytros

J. Appl. Phys. 84, 3569–3573 (1998) https://doi.org/10.1063/1.368531

Abstract

View articletitled, Infrared studies of defects formed during postirradiation anneals of Czochralski silicon

Open the PDF for in another window

Discrete meso-dynamic simulation of thermal explosion in shear bands

S. Tamura; Y. Horie

J. Appl. Phys. 84, 3574–3580 (1998) https://doi.org/10.1063/1.368532

Abstract

View articletitled, Discrete meso-dynamic simulation of thermal explosion in shear bands

Open the PDF for in another window

Monomer-liquid crystal emulsions for switchable films

G. De Filpo; J. Lanzo; F. P. Nicoletta; G. Chidichimo

J. Appl. Phys. 84, 3581–3585 (1998) https://doi.org/10.1063/1.368533

Abstract

View articletitled, Monomer-liquid crystal emulsions for switchable films

Open the PDF for in another window

A least squares method for fitting diffusion data to the Whipple/Suzuoka equations for grain boundary diffusion

D. Shaw; T. L. Shaw

J. Appl. Phys. 84, 3586–3592 (1998) https://doi.org/10.1063/1.368534

Abstract

View articletitled, A least squares method for fitting diffusion data to the Whipple/Suzuoka equations for grain boundary diffusion

Open the PDF for in another window

Arsenic deactivation enhanced diffusion: A time, temperature, and concentration study

P. M. Rousseau; P. B. Griffin; W. T. Fang; J. D. Plummer

J. Appl. Phys. 84, 3593–3601 (1998) https://doi.org/10.1063/1.368593

Abstract

View articletitled, Arsenic deactivation enhanced diffusion: A time, temperature, and concentration study

Open the PDF for in another window

Thermal diffusivity measurement of solid materials by the pulsed photothermal displacement technique

G. L. Bennis; R. Vyas; R. Gupta; S. Ang; W. D. Brown

J. Appl. Phys. 84, 3602–3610 (1998) https://doi.org/10.1063/1.368535

Abstract

View articletitled, Thermal diffusivity measurement of solid materials by the pulsed photothermal displacement technique

Open the PDF for in another window

Diffusion lengths of carriers in $n$ - and $p$ -type ZnMgSSe cladding layers of green laser diodes

E. Snoeks; T. Marshall; J. Petruzzello; M. D. Pashley; L.-L. Chao; G. S. Cargill, III

J. Appl. Phys. 84, 3611–3616 (1998) https://doi.org/10.1063/1.368819

Abstract

View articletitled, Diffusion lengths of carriers in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>- and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type ZnMgSSe cladding layers of green laser diodes

Open the PDF for in another window

Contact analysis of elastic-plastic fractal surfaces

W. Yan; K. Komvopoulos

J. Appl. Phys. 84, 3617–3624 (1998) https://doi.org/10.1063/1.368536

Abstract

View articletitled, Contact analysis of elastic-plastic fractal surfaces

Open the PDF for in another window

Structure, magnetic, and magneto-optical properties of MnBi films grown on quartz and (001)GaAs substrates

K.-U. Harder; D. Menzel; T. Widmer; J. Schoenes

J. Appl. Phys. 84, 3625–3629 (1998) https://doi.org/10.1063/1.368537

Abstract

View articletitled, Structure, magnetic, and magneto-optical properties of MnBi films grown on quartz and (001)GaAs substrates

Open the PDF for in another window

The growth of pinhole-free epitaxial ${DySi}_{2−x}$ films on atomically clean Si(111)

G. H. Shen; J. C. Chen; C. H. Lou; S. L. Cheng; L. J. Chen

J. Appl. Phys. 84, 3630–3635 (1998) https://doi.org/10.1063/1.368538

Abstract

View articletitled, The growth of pinhole-free epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">DySi</mi><mrow><mtext>2−x</mtext></mrow></msub></math> films on atomically clean Si(111)

Open the PDF for in another window

An atomistic simulator for thin film deposition in three dimensions

Hanchen Huang; George H. Gilmer; Tomas Dı́az de la Rubia

J. Appl. Phys. 84, 3636–3649 (1998) https://doi.org/10.1063/1.368539

Abstract

View articletitled, An atomistic simulator for thin film deposition in three dimensions

Open the PDF for in another window

Reciprocal space maps of PbTe/SnTe superlattices

S. O. Ferreira; E. Abramof; P. H. O. Rappl; A. Y. Ueta; H. Closs; C. Boschetti; P. Motisuke; I. N. Bandeira

J. Appl. Phys. 84, 3650–3653 (1998) https://doi.org/10.1063/1.368540

Abstract

View articletitled, Reciprocal space maps of PbTe/SnTe superlattices

Open the PDF for in another window

Environment of Er in epitaxial ${Ca}_{1−x} {Er}_{x} F_{2+x}$ thin films using local techniques

A. S. Barrière; T. Césaire; L. Hirsch; B. Porté; G. Villenueve; Luis Lezama; T. Rojo; G. E. Barberis

J. Appl. Phys. 84, 3654–3657 (1998) https://doi.org/10.1063/1.368541

Abstract

View articletitled, Environment of Er in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Er</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mtext>2+x</mtext></mrow></msub></math> thin films using local techniques

Open the PDF for in another window

Surface structures and electronic states of clean and ${(NH}_{4})_{2} S_{x}$ -treated InAs(111)A and (111)B

S. Ichikawa; N. Sanada; N. Utsumi; Y. Fukuda

J. Appl. Phys. 84, 3658–3663 (1998) https://doi.org/10.1063/1.368594

Abstract

View articletitled, Surface structures and electronic states of clean and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(NH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">)</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">S</mi><mrow><mi>x</mi></mrow></msub></math>-treated InAs(111)A and (111)B

Open the PDF for in another window

Combinatorial approaches toward patterning nanocrystals

T. Vossmeyer; S. Jia; E. DeIonno; M. R. Diehl; S.-H. Kim; X. Peng; A. P. Alivisatos; J. R. Heath

J. Appl. Phys. 84, 3664–3670 (1998) https://doi.org/10.1063/1.368542

Abstract

View articletitled, Combinatorial approaches toward patterning nanocrystals

Open the PDF for in another window

CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

Electronic properties of K doped Na-formed Linde type A zeolite

Qiang Sun; Ling Ye; Xide Xie

J. Appl. Phys. 84, 3671–3675 (1998) https://doi.org/10.1063/1.368543

Abstract

View articletitled, Electronic properties of K doped Na-formed Linde type A zeolite

Open the PDF for in another window

Bound exciton luminescence in Te-doped SrS

Philip D. Rack; Jay S. Lewis; Paul H. Holloway; Wounjhang Park; Brent K. Wagner; Christopher J. Summers

J. Appl. Phys. 84, 3676–3683 (1998) https://doi.org/10.1063/1.368544

Abstract

View articletitled, Bound exciton luminescence in Te-doped SrS

Open the PDF for in another window

Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation

Andreas Schenk

J. Appl. Phys. 84, 3684–3695 (1998) https://doi.org/10.1063/1.368545

Abstract

View articletitled, Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation

Open the PDF for in another window

Optical constants and electronic interband transitions of disordered ${GaAs}_{1−x} P_{x}$ alloys

Kwang Joo Kim; Myoung Hee Lee; Jae Ho Bahng; Kyurhee Shim; B. D. Choe

J. Appl. Phys. 84, 3696–3699 (1998) https://doi.org/10.1063/1.368546

Abstract

View articletitled, Optical constants and electronic interband transitions of disordered <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">P</mi><mrow><mi>x</mi></mrow></msub></math> alloys

Open the PDF for in another window

Investigation of the electrical properties of ${SnO}_{2}$ varistor system using impedance spectroscopy

P. R. Bueno; S. A. Pianaro; E. C. Pereira; L. O. S. Bulhões; E. Longo; J. A. Varela

J. Appl. Phys. 84, 3700–3705 (1998) https://doi.org/10.1063/1.368587

Abstract

View articletitled, Investigation of the electrical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SnO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> varistor system using impedance spectroscopy

Open the PDF for in another window

Improved Monte Carlo method for the study of electron transport in degenerate semiconductors

Piotr Borowik; Jean-Luc Thobel

J. Appl. Phys. 84, 3706–3709 (1998) https://doi.org/10.1063/1.368547

Abstract

View articletitled, Improved Monte Carlo method for the study of electron transport in degenerate semiconductors

Open the PDF for in another window

Electronic structures of cubic lattice quantum dots

Shu-Shen Li; Jian-Bai Xia

J. Appl. Phys. 84, 3710–3713 (1998) https://doi.org/10.1063/1.368548

Abstract

View articletitled, Electronic structures of cubic lattice quantum dots

Open the PDF for in another window

Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

H. T. Johnson; L. B. Freund; C. D. Akyüz; A. Zaslavsky

J. Appl. Phys. 84, 3714–3725 (1998) https://doi.org/10.1063/1.368549

Abstract

View articletitled, Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires

Open the PDF for in another window

Consequences of space dependence of effective mass in heterostructures

Michael Dyakonov; Michael S. Shur

J. Appl. Phys. 84, 3726–3730 (1998) https://doi.org/10.1063/1.368550

Abstract

View articletitled, Consequences of space dependence of effective mass in heterostructures

Open the PDF for in another window

Photogeneration of charge carriers in anisotropic multilayer structures of phthalocyaninato-polysiloxane

P. Gattinger; H. Rengel; D. Neher

J. Appl. Phys. 84, 3731–3740 (1998) https://doi.org/10.1063/1.368551

Abstract

View articletitled, Photogeneration of charge carriers in anisotropic multilayer structures of phthalocyaninato-polysiloxane

Open the PDF for in another window

In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method

A. K. Fung; J. D. Albrecht; M. I. Nathan; P. P. Ruden; H. Shtrikman

J. Appl. Phys. 84, 3741–3746 (1998) https://doi.org/10.1063/1.368552

Abstract

View articletitled, In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method

Open the PDF for in another window

Electrical characterization of InP/GaInP quantum dots by space charge spectroscopy

S. Anand; N. Carlsson; M.-E. Pistol; L. Samuelson; W. Seifert

J. Appl. Phys. 84, 3747–3755 (1998) https://doi.org/10.1063/1.368553

Abstract

View articletitled, Electrical characterization of InP/GaInP quantum dots by space charge spectroscopy

Open the PDF for in another window

Electron transport in metallic dot arrays: Effect of a broad dispersion in the tunnel junction dimensions

A. S. Cordan; A. Goltzené; Y. Hervé; M. Mejias; C. Vieu; H. Launois

J. Appl. Phys. 84, 3756–3763 (1998) https://doi.org/10.1063/1.368554

Abstract

View articletitled, Electron transport in metallic dot arrays: Effect of a broad dispersion in the tunnel junction dimensions

Open the PDF for in another window

Thermally stimulated current spectroscopy on silicon planar-doped GaAs samples

R. M. Rubinger; J. C. Bezerra; E. F. Chagas; J. C. González; W. N. Rodrigues; G. M. Ribeiro; M. V. B. Moreira; A. G. de Oliveira

J. Appl. Phys. 84, 3764–3769 (1998) https://doi.org/10.1063/1.368588

Abstract

View articletitled, Thermally stimulated current spectroscopy on silicon planar-doped GaAs samples

Open the PDF for in another window

Influence of the real shape of a sample on the pinning induced magnetostriction

A. Nabiałek; H. Szymczak; V. A. Sirenko; A. I. D’yachenko

J. Appl. Phys. 84, 3770–3775 (1998) https://doi.org/10.1063/1.368555

Abstract

View articletitled, Influence of the real shape of a sample on the pinning induced magnetostriction

Open the PDF for in another window

Modeling of microwave magnetic envelope solitons in thin ferrite films through the nonlinear Schrödinger equation

Hong Yan Zhang; Pavel Kabos; Hua Xia; Reinhold A. Staudinger; Pavel A. Kolodin; Carl E. Patton

J. Appl. Phys. 84, 3776–3785 (1998) https://doi.org/10.1063/1.368556

Abstract

View articletitled, Modeling of microwave magnetic envelope solitons in thin ferrite films through the nonlinear Schrödinger equation

Open the PDF for in another window

Kinetic aspects of the solid hydrogenation– disproportionation–desorption–recombination process in ${Nd}_{13.67} {Co}_{15.74} {Al}_{0.77} {Ga}_{0.27} {Zr}_{0.03} {Fe}_{62.2} B_{7.33}$ alloys

C. E. Rodrı́guez Torres; M. B. Fernández van Raap; F. H. Sánchez; L. Mendoza Zélis; F. Actis

J. Appl. Phys. 84, 3786–3791 (1998) https://doi.org/10.1063/1.368589

Abstract

Open the PDF for in another window

Magnetization process and magnetoimpedance in $(110)[001] {FeSi}_{3%}$

M. Carara; A. Gündel; M. N. Baibich; R. L. Sommer

J. Appl. Phys. 84, 3792–3797 (1998) https://doi.org/10.1063/1.368557

Abstract

View articletitled, Magnetization process and magnetoimpedance in <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(110)[001]</mtext><msub xmlns=""><mi mathvariant="normal">FeSi</mi><mrow><mtext>3%</mtext></mrow></msub></math>

Open the PDF for in another window

Magnetotransport and magnetocaloric properties of ${La}_{0.55} {Er}_{0.05} {Ca}_{0.4} {MnO}_{3}$

Gang Gu; Jinhua Cai; Wei Yang; Youwei Du

J. Appl. Phys. 84, 3798–3801 (1998) https://doi.org/10.1063/1.368558

Abstract

View articletitled, Magnetotransport and magnetocaloric properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.55</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Er</mi><mrow><mi mathvariant="normal">0.05</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

Open the PDF for in another window

CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

Microscopic characterization of low-field switching in ferroelectric triglycine sulfate

Carmen Aragó; J. R. Fernandez del Castillo; Beatriz Noheda; Julio A. Gonzalo

J. Appl. Phys. 84, 3802–3805 (1998) https://doi.org/10.1063/1.368590

Abstract

View articletitled, Microscopic characterization of low-field switching in ferroelectric triglycine sulfate

Open the PDF for in another window

Dielectric properties of fiber-filled composites

A. N. Lagarkov; S. M. Matytsin; K. N. Rozanov; A. K. Sarychev

J. Appl. Phys. 84, 3806–3814 (1998) https://doi.org/10.1063/1.368559

Abstract

View articletitled, Dielectric properties of fiber-filled composites

Open the PDF for in another window

Correlation between structure, microstructure, and ferroelectric properties of ${PbZr}_{0.2} {Ti}_{0.8} O_{3}$ integrated film: Influence of the sol-gel process and the substrate

Nicole Floquet; Jérôme Hector; Philippe Gaucher

J. Appl. Phys. 84, 3815–3826 (1998) https://doi.org/10.1063/1.368560

Abstract

View articletitled, Correlation between structure, microstructure, and ferroelectric properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbZr</mi><mrow><mi mathvariant="normal">0.2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mi mathvariant="normal">0.8</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> integrated film: Influence of the sol-gel process and the substrate

Open the PDF for in another window

Narrow band 390 nm emitting phosphors for photoluminescent liquid crystal displays

A. Vecht; A. C. Newport; P. A. Bayley; W. A. Crossland

J. Appl. Phys. 84, 3827–3829 (1998) https://doi.org/10.1063/1.368561

Abstract

View articletitled, Narrow band 390 nm emitting phosphors for photoluminescent liquid crystal displays

Open the PDF for in another window

Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy

G. Pozina; I. Ivanov; B. Monemar; J. V. Thordson; T. G. Andersson

J. Appl. Phys. 84, 3830–3835 (1998) https://doi.org/10.1063/1.368562

Abstract

View articletitled, Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy

Open the PDF for in another window

A comparative analysis of $a- C:H$ by infrared spectroscopy and mass selected thermal effusion

J. Ristein; R. T. Stief; L. Ley; W. Beyer

J. Appl. Phys. 84, 3836–3847 (1998) https://doi.org/10.1063/1.368563

Abstract

View articletitled, A comparative analysis of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a-</mi><mi mathvariant="normal" xmlns="">C:H</mi></math> by infrared spectroscopy and mass selected thermal effusion

Open the PDF for in another window

Photoluminescence studies of excitonic transitions in GaN epitaxial layers

Annamraju Kasi Viswanath; Joo In Lee; Sungkyu Yu; Dongho Kim; Yoonho Choi; Chang-hee Hong

J. Appl. Phys. 84, 3848–3859 (1998) https://doi.org/10.1063/1.368564

Abstract

View articletitled, Photoluminescence studies of excitonic transitions in GaN epitaxial layers

Open the PDF for in another window

Photoinduced dichroism and optical anisotropy in a liquid-crystalline azobenzene side chain polymer caused by anisotropic angular distribution of trans and cis isomers

Lev M. Blinov; Mikhail V. Kozlovsky; Masanori Ozaki; Kent Skarp; Katsumi Yoshino

J. Appl. Phys. 84, 3860–3866 (1998) https://doi.org/10.1063/1.368565

Abstract

View articletitled, Photoinduced dichroism and optical anisotropy in a liquid-crystalline azobenzene side chain polymer caused by anisotropic angular distribution of trans and cis isomers

Open the PDF for in another window

Room-temperature photoluminescence from Tb ions implanted in ${SiO}_{2}$ on Si

H. Amekura; A. Eckau; R. Carius; Ch. Buchal

J. Appl. Phys. 84, 3867–3871 (1998) https://doi.org/10.1063/1.368591

Abstract

View articletitled, Room-temperature photoluminescence from Tb ions implanted in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> on Si

Open the PDF for in another window

Influence of temperature and phase transitions on the Urbach’s tails of absorption spectra for ${TlInS}_{2}$ single crystals

B. Abay; H. S. Güder; H. Efeoǧlu; Y. K. Yoǧurtçu

J. Appl. Phys. 84, 3872–3879 (1998) https://doi.org/10.1063/1.368566

Abstract

View articletitled, Influence of temperature and phase transitions on the Urbach’s tails of absorption spectra for <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TlInS</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> single crystals

Open the PDF for in another window

Mechanism of explosive electron emission for dielectric fiber (velvet) cathodes

R. B. Miller

J. Appl. Phys. 84, 3880–3889 (1998) https://doi.org/10.1063/1.368567

Abstract

View articletitled, Mechanism of explosive electron emission for dielectric fiber (velvet) cathodes

Open the PDF for in another window

Modification on the electron field emission properties of diamond films: The effect of bias voltage applied in situ

Yung-Hsin Chen; Chen-Ti Hu; I-Nan Lin

J. Appl. Phys. 84, 3890–3894 (1998) https://doi.org/10.1063/1.368568

Abstract

View articletitled, Modification on the electron field emission properties of diamond films: The effect of bias voltage applied in situ

Open the PDF for in another window

CROSS-DISCIPLINARY PHYSICS (PACS 81-98)

Interactions of SiH radicals with silicon surfaces: An atomic-scale simulation study

Shyam Ramalingam; Dimitrios Maroudas; Eray S. Aydil

J. Appl. Phys. 84, 3895–3911 (1998) https://doi.org/10.1063/1.368569

Abstract

View articletitled, Interactions of SiH radicals with silicon surfaces: An atomic-scale simulation study

Open the PDF for in another window

Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization

Yefan Chen; D. M. Bagnall; Hang-jun Koh; Ki-tae Park; Kenji Hiraga; Ziqiang Zhu; Takafumi Yao

J. Appl. Phys. 84, 3912–3918 (1998) https://doi.org/10.1063/1.368595

Abstract

View articletitled, Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterization

Open the PDF for in another window

Growth and composition of dual-plasma polymer-like amorphous carbon films

C. Godet; T. Heitz; J. E. Bourée; B. Drévillon; C. Clerc

J. Appl. Phys. 84, 3919–3932 (1998) https://doi.org/10.1063/1.368570

Abstract

View articletitled, Growth and composition of dual-plasma polymer-like amorphous carbon films

Open the PDF for in another window

Selective wet etching of GaAs on ${Al}_{x} {Ga}_{1−x} As$ for AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor

Eun-A Moon; Jong-Lam Lee; Hyung Mo Yoo

J. Appl. Phys. 84, 3933–3938 (1998) https://doi.org/10.1063/1.368571

Abstract

View articletitled, Selective wet etching of GaAs on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> for AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor

Open the PDF for in another window

Influence of strain and microstructure on magnetotransport in ${La}_{0.7} {Ca}_{0.3} {MnO}_{3}$ thin films

K. A. Thomas; P. S. I. P. N. de Silva; L. F. Cohen; A. Hossain; M. Rajeswari; T. Venkatesan; R. Hiskes; J. L. MacManus-Driscoll

J. Appl. Phys. 84, 3939–3948 (1998) https://doi.org/10.1063/1.368572

Abstract

View articletitled, Influence of strain and microstructure on magnetotransport in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.7</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films

Open the PDF for in another window

Influence of excitation frequency, temperature, and hydrogen dilution on the stability of plasma enhanced chemical vapor deposited $a- Si:H$

R. Platz; S. Wagner; C. Hof; A. Shah; S. Wieder; B. Rech

J. Appl. Phys. 84, 3949–3953 (1998) https://doi.org/10.1063/1.368592

Abstract

View articletitled, Influence of excitation frequency, temperature, and hydrogen dilution on the stability of plasma enhanced chemical vapor deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a-</mi><mi mathvariant="normal" xmlns="">Si:H</mi></math>

Open the PDF for in another window

Effect of Pt layers on the photoelectrochemical properties of a ${WO}_{3} /p- Si$ electrode

Ki Hyun Yoon; Dong Kyun Seo; Yong Soo Cho; Dong Heon Kang

J. Appl. Phys. 84, 3954–3959 (1998) https://doi.org/10.1063/1.368573

Abstract

View articletitled, Effect of Pt layers on the photoelectrochemical properties of a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi xmlns="">/p-</mi><mi mathvariant="normal" xmlns="">Si</mi></math> electrode

Open the PDF for in another window

Effect of an inhomogeneous insulating film on the capacitance of metal–insulator–semiconductor structures

Anders Jauhiainen; David Westberg; Stefan Bengtsson

J. Appl. Phys. 84, 3960–3965 (1998) https://doi.org/10.1063/1.368574

Abstract

View articletitled, Effect of an inhomogeneous insulating film on the capacitance of metal–insulator–semiconductor structures

Open the PDF for in another window

Effects of excitons on solar cells

Yong Zhang; Angelo Mascarenhas; Satyen Deb

J. Appl. Phys. 84, 3966–3971 (1998) https://doi.org/10.1063/1.368575

Abstract

View articletitled, Effects of excitons on solar cells

Open the PDF for in another window

Critical current in high $T_{c}$ grain boundary junctions

Jerome A. Luine; Vladimir Z. Kresin

J. Appl. Phys. 84, 3972–3979 (1998) https://doi.org/10.1063/1.368576

Abstract

View articletitled, Critical current in high <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>T</mi><mrow><mi>c</mi></mrow></msub></math> grain boundary junctions

Open the PDF for in another window

Voltage switching and oscillations in a single barrier heterostructure hot-electron diode

A. Krotkus; A. Reklaitis; A. Geizutis; M. Asche

J. Appl. Phys. 84, 3980–3985 (1998) https://doi.org/10.1063/1.368577

Abstract

View articletitled, Voltage switching and oscillations in a single barrier heterostructure hot-electron diode

Open the PDF for in another window

Mapping of crystal defects and the minority carrier diffusion length in 6H–SiC using a novel electron beam induced current technique

M. Tabib-Azar; S. M. Hubbard; C. M. Schnabel; S. Bailey

J. Appl. Phys. 84, 3986–3992 (1998) https://doi.org/10.1063/1.368578

Abstract

View articletitled, Mapping of crystal defects and the minority carrier diffusion length in 6H–SiC using a novel electron beam induced current technique

Open the PDF for in another window

Back-channel-oxidized $a- Si:H$ thin-film transistors

Kazushige Takechi; Naoto Hirano; Hiroshi Hayama; Setsuo Kaneko

J. Appl. Phys. 84, 3993–3999 (1998) https://doi.org/10.1063/1.368579

Abstract

View articletitled, Back-channel-oxidized <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a-</mi><mi mathvariant="normal" xmlns="">Si:H</mi></math> thin-film transistors

Open the PDF for in another window

Three-dimensional simulation of quantum cellular automata and the zero-dimensional approximation

Hua Wu; D. W. L. Sprung

J. Appl. Phys. 84, 4000–4005 (1998) https://doi.org/10.1063/1.368580

Abstract

View articletitled, Three-dimensional simulation of quantum cellular automata and the zero-dimensional approximation

Open the PDF for in another window

Coplanar amorphous silicon thin film transistor fabricated by inductively coupled plasma chemical vapor deposition

Sung Ki Kim; Young Jin Choi; Kyu Sik Cho; Jin Jang

J. Appl. Phys. 84, 4006–4012 (1998) https://doi.org/10.1063/1.368581

Abstract

View articletitled, Coplanar amorphous silicon thin film transistor fabricated by inductively coupled plasma chemical vapor deposition

Open the PDF for in another window

Accurate thickness/density measurements of organic light-emitting diodes

C. H. M. Marée; R. A. Weller; L. C. Feldman; K. Pakbaz; H. W. H. Lee

J. Appl. Phys. 84, 4013–4016 (1998) https://doi.org/10.1063/1.368582

Abstract

View articletitled, Accurate thickness/density measurements of organic light-emitting diodes

Open the PDF for in another window

COMMUNICATIONS

Intermixing in GaAsSb/GaAs single quantum wells

O. M. Khreis; K. P. Homewood; W. P. Gillin; K. E. Singer

J. Appl. Phys. 84, 4017–4019 (1998) https://doi.org/10.1063/1.368583

Abstract

View articletitled, Intermixing in GaAsSb/GaAs single quantum wells

Open the PDF for in another window

Exact electron momentum-relaxation times in GaN associated with scattering by polar-optical phonons

B. K. Ridley

J. Appl. Phys. 84, 4020–4021 (1998) https://doi.org/10.1063/1.368584

Abstract

View articletitled, Exact electron momentum-relaxation times in GaN associated with scattering by polar-optical phonons

Open the PDF for in another window

Temperature dependence of the Raman spectra of carbon nanotubes

Fumin Huang; Kwok To Yue; Pingheng Tan; Shu-Lin Zhang; Zujin Shi; Xihuang Zhou; Zhennan Gu

J. Appl. Phys. 84, 4022–4024 (1998) https://doi.org/10.1063/1.368585

Abstract

View articletitled, Temperature dependence of the Raman spectra of carbon nanotubes

Open the PDF for in another window

Issues

GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)

CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

CROSS-DISCIPLINARY PHYSICS (PACS 81-98)

COMMUNICATIONS

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only