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GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)

Systematic errors of locally resolved photothermal radiometric measurements

H. G. Walther; T. Kitzing

J. Appl. Phys. 84, 1163–1167 (1998) https://doi.org/10.1063/1.368180

Abstract

View articletitled, Systematic errors of locally resolved photothermal radiometric measurements

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Resolution and contrast in Kelvin probe force microscopy

H. O. Jacobs; P. Leuchtmann; O. J. Homan; A. Stemmer

J. Appl. Phys. 84, 1168–1173 (1998) https://doi.org/10.1063/1.368181

Abstract

View articletitled, Resolution and contrast in Kelvin probe force microscopy

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Efficient ${XeI}^{*}$ excimer ultraviolet sources from a dielectric barrier discharge

Jun-Ying Zhang; Ian W. Boyd

J. Appl. Phys. 84, 1174–1178 (1998) https://doi.org/10.1063/1.368182

Abstract

View articletitled, Efficient <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">XeI</mi><mrow><mi>*</mi></mrow></msup></math> excimer ultraviolet sources from a dielectric barrier discharge

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Production, thermalization, and transport of sputtered lithium atoms across a glow discharge plasma, studied by concentration modulated absorption spectroscopy

Rod S. Mason; John C. Naylor; Michael G. Hatcher; W. Jeremy Jones

J. Appl. Phys. 84, 1179–1185 (1998) https://doi.org/10.1063/1.368183

Abstract

View articletitled, Production, thermalization, and transport of sputtered lithium atoms across a glow discharge plasma, studied by concentration modulated absorption spectroscopy

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CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

Linear and nonlinear optical properties of ${KNbO}_{3}$ ridge waveguides

Tomas Pliska; Daniel Fluck; Peter Günter; Lutz Beckers; Christoph Buchal

J. Appl. Phys. 84, 1186–1195 (1998) https://doi.org/10.1063/1.368184

Abstract

View articletitled, Linear and nonlinear optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">KNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> ridge waveguides

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Optical-field calculations for lossy multiple-layer ${Al}_{x} {Ga}_{1−x} {N/In}_{x} {Ga}_{1−x}$ N laser diodes

M. J. Bergmann; H. C. Casey, Jr.

J. Appl. Phys. 84, 1196–1203 (1998) https://doi.org/10.1063/1.368185

Abstract

View articletitled, Optical-field calculations for lossy multiple-layer <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">N/In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub></math>N laser diodes

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Effect of ${SiO}_{x}$ buffer layer on propagation loss in ${LiNbO}_{3}$ channel waveguides

Ching-Ting Lee; Chang-Ting Huang; Jieng-Yue Chen

J. Appl. Phys. 84, 1204–1209 (1998) https://doi.org/10.1063/1.368244

Abstract

View articletitled, Effect of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi>x</mi></mrow></msub></math> buffer layer on propagation loss in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mn>3</mn></mrow></msub></math> channel waveguides

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Numerical study on localized defect modes in two-dimensional triangular photonic crystals

Kazuaki Sakoda

J. Appl. Phys. 84, 1210–1214 (1998) https://doi.org/10.1063/1.368186

Abstract

View articletitled, Numerical study on localized defect modes in two-dimensional triangular photonic crystals

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$H_{2} S$ destruction in 50 Hz and 25 kHz gliding arc reactors

V. Dalaine; J. M. Cormier; S. Pellerin; P. Lefaucheux

J. Appl. Phys. 84, 1215–1221 (1998) https://doi.org/10.1063/1.368187

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub><mi mathvariant="normal" xmlns="">S</mi></math> destruction in 50 Hz and 25 kHz gliding arc reactors

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Ultrahigh frequency versus inductively coupled chlorine plasmas: Comparisons of Cl and ${Cl}_{2}$ concentrations and electron temperatures measured by trace rare gases optical emission spectroscopy

M. V. Malyshev; V. M. Donnelly; S. Samukawa

J. Appl. Phys. 84, 1222–1230 (1998) https://doi.org/10.1063/1.368820

Abstract

View articletitled, Ultrahigh frequency versus inductively coupled chlorine plasmas: Comparisons of Cl and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> concentrations and electron temperatures measured by trace rare gases optical emission spectroscopy

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Charge distribution function of dust particles in low temperature plasmas

B. F. Gordiets; C. M. Ferreira

J. Appl. Phys. 84, 1231–1235 (1998) https://doi.org/10.1063/1.368188

Abstract

View articletitled, Charge distribution function of dust particles in low temperature plasmas

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Effects of rapidly decaying plasmas on Langmuir probe measurements

Guowen Ding; John E. Scharer; Kurt L. Kelly

J. Appl. Phys. 84, 1236–1240 (1998) https://doi.org/10.1063/1.368189

Abstract

View articletitled, Effects of rapidly decaying plasmas on Langmuir probe measurements

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CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

Dependence of the density of defects in the oxide on Czochralski silicon on its thickness

Manabu Itsumi; Masahiko Maeda; Takemi Ueki

J. Appl. Phys. 84, 1241–1245 (1998) https://doi.org/10.1063/1.368190

Abstract

View articletitled, Dependence of the density of defects in the oxide on Czochralski silicon on its thickness

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Local vibrational mode bands due to a $DX$ -like hydrogen-related center in silicon

V. P. Markevich; M. Suezawa; L. I. Murin

J. Appl. Phys. 84, 1246–1250 (1998) https://doi.org/10.1063/1.368191

Abstract

View articletitled, Local vibrational mode bands due to a <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">DX</mi></math>-like hydrogen-related center in silicon

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Effect of radiation transport on the kinetics of phosphor degradation

Mark W. Grossman

J. Appl. Phys. 84, 1251–1262 (1998) https://doi.org/10.1063/1.368192

Abstract

View articletitled, Effect of radiation transport on the kinetics of phosphor degradation

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Combined transmission electron microscopy and cathodoluminescence studies of degradation in electron-beam-pumped ${Zn}_{1−x} {Cd}_{x} Se/ZnSe$ blue-green lasers

Jean-Marc Bonard; Jean-Daniel Ganière; Lia Vanzetti; Jens J. Paggel; Lucia Sorba; Alfonso Franciosi; Denis Hervé; Engin Molva

J. Appl. Phys. 84, 1263–1273 (1998) https://doi.org/10.1063/1.368193

Abstract

View articletitled, Combined transmission electron microscopy and cathodoluminescence studies of degradation in electron-beam-pumped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Se/ZnSe</mi></math> blue-green lasers

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Electrical and optical characterization of ion-implanted ${CuGaSe}_{2}$ single crystals

J. H. Schön; E. Arushanov; L. L. Kulyuk; A. Micu; D. Shaban; V. Tezlevan; N. Fabre; E. Bucher

J. Appl. Phys. 84, 1274–1278 (1998) https://doi.org/10.1063/1.368194

Abstract

View articletitled, Electrical and optical characterization of ion-implanted <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuGaSe</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> single crystals

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Equilibrium constant of segregation-induced Fe gettered by heavy boron doping in Si

Satoshi Tobe; Yoshinori Hayamizu; Yutaka Kitagawara

J. Appl. Phys. 84, 1279–1283 (1998) https://doi.org/10.1063/1.368195

Abstract

View articletitled, Equilibrium constant of segregation-induced Fe gettered by heavy boron doping in Si

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Scaling approach to conical indentation in elastic-plastic solids with work hardening

Yang-Tse Cheng; Che-Min Cheng

J. Appl. Phys. 84, 1284–1291 (1998) https://doi.org/10.1063/1.368196

Abstract

View articletitled, Scaling approach to conical indentation in elastic-plastic solids with work hardening

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A numerical study of shock-induced particle velocity dispersion in solid mixtures

K. Yano; Y. Horie

J. Appl. Phys. 84, 1292–1298 (1998) https://doi.org/10.1063/1.368197

Abstract

View articletitled, A numerical study of shock-induced particle velocity dispersion in solid mixtures

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Pressure-induced phase transformations in diamond

Yury G. Gogotsi; Andreas Kailer; Klaus G. Nickel

J. Appl. Phys. 84, 1299–1304 (1998) https://doi.org/10.1063/1.368198

Abstract

View articletitled, Pressure-induced phase transformations in diamond

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Two-step dopant diffusion study performed in two dimensions by scanning capacitance microscopy and TSUPREM IV

J. Kim; J. S. McMurray; C. C. Williams; J. Slinkman

J. Appl. Phys. 84, 1305–1309 (1998) https://doi.org/10.1063/1.368245

Abstract

View articletitled, Two-step dopant diffusion study performed in two dimensions by scanning capacitance microscopy and TSUPREM IV

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Thermal stability of Pd/Ge-based ohmic contacts to n-type GaAs

Y. G. Wang; D. Wang; D. G. Ivey

J. Appl. Phys. 84, 1310–1315 (1998) https://doi.org/10.1063/1.368246

Abstract

View articletitled, Thermal stability of Pd/Ge-based ohmic contacts to n-type GaAs

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Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown ${SiO}_{2}$ layers formed via low energy ion implantation

Anri Nakajima; Toshiro Futatsugi; Hiroshi Nakao; Tatsuya Usuki; Naoto Horiguchi; Naoki Yokoyama

J. Appl. Phys. 84, 1316–1320 (1998) https://doi.org/10.1063/1.368199

Abstract

View articletitled, Microstructure and electrical properties of Sn nanocrystals in thin, thermally grown <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> layers formed via low energy ion implantation

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Bistable nematic azimuthal alignment induced by anchoring competition

R. Barberi; J. J. Bonvent; M. Giocondo; M. Iovane; A. L. Alexe-Ionescu

J. Appl. Phys. 84, 1321–1324 (1998) https://doi.org/10.1063/1.368200

Abstract

View articletitled, Bistable nematic azimuthal alignment induced by anchoring competition

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Deep level spectroscopy of high-power laser diode arrays

J. W. Tomm; A. Bärwolff; A. Jaeger; T. Elsaesser; J. Bollmann; W. T. Masselink; A. Gerhardt; J. Donecker

J. Appl. Phys. 84, 1325–1332 (1998) https://doi.org/10.1063/1.368201

Abstract

View articletitled, Deep level spectroscopy of high-power laser diode arrays

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Fabrication of narrow-band-gap hydrogenated amorphous silicon by chemical annealing

Wataru Futako; Shinya Takeoka; Charles M. Fortmann; Isamu Shimizu

J. Appl. Phys. 84, 1333–1339 (1998) https://doi.org/10.1063/1.368202

Abstract

View articletitled, Fabrication of narrow-band-gap hydrogenated amorphous silicon by chemical annealing

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The phototransformation of $C_{60}$ thin films on GaAs(100) studied by in situ Raman spectroscopy

S. Park; H. Han; R. Kaiser; T. Werninghaus; A. Schneider; D. Drews; D. R. T. Zahn

J. Appl. Phys. 84, 1340–1345 (1998) https://doi.org/10.1063/1.368203

Abstract

View articletitled, The phototransformation of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">60</mi></mrow></msub></math> thin films on GaAs(100) studied by in situ Raman spectroscopy

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Surface roughness and in-plane texturing in sputtered thin films

J. F. Whitacre; Z. U. Rek; J. C. Bilello; S. M. Yalisove

J. Appl. Phys. 84, 1346–1353 (1998) https://doi.org/10.1063/1.368204

Abstract

View articletitled, Surface roughness and in-plane texturing in sputtered thin films

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Electrically active point defects in $n$ -type $4 H–SiC$

J. P. Doyle; M. K. Linnarsson; P. Pellegrino; N. Keskitalo; B. G. Svensson; A. Schöner; N. Nordell; J. L. Lindström

J. Appl. Phys. 84, 1354–1357 (1998) https://doi.org/10.1063/1.368247

Abstract

View articletitled, Electrically active point defects in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type <math xmlns="http://www.w3.org/1998/Math/MathML"><mn xmlns="">4</mn><mi mathvariant="normal" xmlns="">H–SiC</mi></math>

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Elastic and piezoelectric fields around a buried quantum dot: A simple picture

John H. Davies

J. Appl. Phys. 84, 1358–1365 (1998) https://doi.org/10.1063/1.368205

Abstract

View articletitled, Elastic and piezoelectric fields around a buried quantum dot: A simple picture

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X-ray study of lateral strain and composition modulation in an AlGaAs overlayer induced by a GaAs lateral surface grating

N. Darowski; U. Pietsch; U. Zeimer; V. Smirnitzki; F. Bugge

J. Appl. Phys. 84, 1366–1370 (1998) https://doi.org/10.1063/1.368248

Abstract

View articletitled, X-ray study of lateral strain and composition modulation in an AlGaAs overlayer induced by a GaAs lateral surface grating

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Effect of plasma treatment on the density of defects at an amorphous $Si:H$ -insulator interface

Ikurou Umezu; Takahiro Kuwamura; Kazuaki Kitamura; Takatsugu Tsuchida; Keiji Maeda

J. Appl. Phys. 84, 1371–1377 (1998) https://doi.org/10.1063/1.368249

Abstract

View articletitled, Effect of plasma treatment on the density of defects at an amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Si:H</mi></math>-insulator interface

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Geometrical field effects in voltage pulse fabrication of nanostructures using scanning tunneling microscopy

P. A. Campbell; G. A. Farnan; D. G. Walmsley

J. Appl. Phys. 84, 1378–1382 (1998) https://doi.org/10.1063/1.368171

Abstract

View articletitled, Geometrical field effects in voltage pulse fabrication of nanostructures using scanning tunneling microscopy

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Nucleation processes during metalorganic vapor phase epitaxy of ZnSe on GaAs(001)

Mitsuru Funato; Satoshi Aoki; Shizuo Fujita; Shigeo Fujita

J. Appl. Phys. 84, 1383–1388 (1998) https://doi.org/10.1063/1.368250

Abstract

View articletitled, Nucleation processes during metalorganic vapor phase epitaxy of ZnSe on GaAs(001)

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Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

D. Doppalapudi; S. N. Basu; K. F. Ludwig, Jr.; T. D. Moustakas

J. Appl. Phys. 84, 1389–1395 (1998) https://doi.org/10.1063/1.368251

Abstract

View articletitled, Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

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CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

Balance-equation approach to hot-electron transport in semiconductors irradiated by an intense terahertz field

X. L. Lei

J. Appl. Phys. 84, 1396–1404 (1998) https://doi.org/10.1063/1.368172

Abstract

View articletitled, Balance-equation approach to hot-electron transport in semiconductors irradiated by an intense terahertz field

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Doping effects on the high-frequency mobility of minority carriers in $p$ -GaAs

E. W. S. Caetano; H. Wang; V. N. Freire; J. A. P. da Costa

J. Appl. Phys. 84, 1405–1407 (1998) https://doi.org/10.1063/1.368173

Abstract

View articletitled, Doping effects on the high-frequency mobility of minority carriers in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-GaAs

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Electrical properties of Co-doped and Ni-doped $β- {FeSi}_{2}$

Jun-ichi Tani; Hiroyasu Kido

J. Appl. Phys. 84, 1408–1411 (1998) https://doi.org/10.1063/1.368174

Abstract

View articletitled, Electrical properties of Co-doped and Ni-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">β-</mi><msub xmlns=""><mi mathvariant="normal">FeSi</mi><mrow><mn>2</mn></mrow></msub></math>

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Amorphous B–C–N semiconductor

B. Yao; W. J. Chen; L. Liu; B. Z. Ding; W. H. Su

J. Appl. Phys. 84, 1412–1415 (1998) https://doi.org/10.1063/1.368175

Abstract

View articletitled, Amorphous B–C–N semiconductor

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Kinetic behavior analysis of porphyrin Langmuir–Blodgett films for conductive gas sensors

A. Tepore; A. Serra; D. Manno; L. Valli; G. Micocci; D. P. Arnold

J. Appl. Phys. 84, 1416–1420 (1998) https://doi.org/10.1063/1.368252

Abstract

View articletitled, Kinetic behavior analysis of porphyrin Langmuir–Blodgett films for conductive gas sensors

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Electric field effects on the states of a donor impurity in rectangular cross-section vacuum/GaAs/vacuum quantum-well wires

A. Montes; C. A. Duque; N. Porras-Montenegro

J. Appl. Phys. 84, 1421–1425 (1998) https://doi.org/10.1063/1.368176

Abstract

View articletitled, Electric field effects on the states of a donor impurity in rectangular cross-section vacuum/GaAs/vacuum quantum-well wires

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Electrical properties of extremely low doped GaSb Schottky diodes

Whitney Mason; J. R. Waterman

J. Appl. Phys. 84, 1426–1429 (1998) https://doi.org/10.1063/1.368177

Abstract

View articletitled, Electrical properties of extremely low doped GaSb Schottky diodes

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Surface plasmons and breakdown in thin silicon dioxide films on silicon

Jong-Hyun Kim; Julian J. Sanchez; Thomas A. DeMassa; Mohammed T. Quddus; David Smith; Farhad Shaapur; Karl Weiss; Chuan H. Liu

J. Appl. Phys. 84, 1430–1438 (1998) https://doi.org/10.1063/1.368178

Abstract

View articletitled, Surface plasmons and breakdown in thin silicon dioxide films on silicon

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Evolution in the charge injection efficiency of evaporated Au contacts on a molecularly doped polymer

Andronique Ioannidis; John S. Facci; Martin A. Abkowitz

J. Appl. Phys. 84, 1439–1444 (1998) https://doi.org/10.1063/1.368179

Abstract

View articletitled, Evolution in the charge injection efficiency of evaporated Au contacts on a molecularly doped polymer

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Charge injection from polyaniline-poly (methylmethacrylate) blends into poly (p-phenylene vinylene)

J. R. de Lima; C. Schreiner; I. A. Hümmelgen; C. C. M. Fornari, Jr.; C. A. Ferreira; F. C. Nart

J. Appl. Phys. 84, 1445–1448 (1998) https://doi.org/10.1063/1.368606

Abstract

View articletitled, Charge injection from polyaniline-poly (methylmethacrylate) blends into poly (p-phenylene vinylene)

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Effects of recombination current on the current–voltage characteristics in metal–InGaAs Schottky diodes

X. J. Wang; L. He

J. Appl. Phys. 84, 1449–1453 (1998) https://doi.org/10.1063/1.368206

Abstract

View articletitled, Effects of recombination current on the current–voltage characteristics in metal–InGaAs Schottky diodes

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The effects of electric field on the electronic structure of a semiconductor quantum dot

Kai Chang; Jian-Bai Xia

J. Appl. Phys. 84, 1454–1459 (1998) https://doi.org/10.1063/1.368207

Abstract

View articletitled, The effects of electric field on the electronic structure of a semiconductor quantum dot

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Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs double barrier diodes

Hiroto Kitabayashi; Takao Waho; Masafumi Yamamoto

J. Appl. Phys. 84, 1460–1466 (1998) https://doi.org/10.1063/1.368208

Abstract

View articletitled, Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs double barrier diodes

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Anomalous Hall conductivity and magnetoresistance in epitaxial ${La}_{0.67} {Ca}_{0.33} {MnO}_{3−δ}$ thin films

Kebin Li; Rongsheng Cheng; Zhixiang Chen; Jun Fang; Xiaowen Cao; Yuheng Zhang

J. Appl. Phys. 84, 1467–1471 (1998) https://doi.org/10.1063/1.368209

Abstract

View articletitled, Anomalous Hall conductivity and magnetoresistance in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.67</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.33</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3−δ</mi></mrow></msub></math> thin films

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$N$ -type doping of lattice-matched ZnCdSe and ${Zn}_{x} {Cd}_{y} {Mg}_{1−x−y} Se$ epilayers on InP using ${ZnCl}_{2}$

W. Lin; A. Cavus; L. Zeng; M. C. Tamargo

J. Appl. Phys. 84, 1472–1475 (1998) https://doi.org/10.1063/1.368210

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">N</mi></math>-type doping of lattice-matched ZnCdSe and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mtext>1−x−y</mtext></mrow></msub><mi mathvariant="normal" xmlns="">Se</mi></math> epilayers on InP using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZnCl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>

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Small inductance approximation of phase locking in multijunction SQUIDs

B. Frank; W. Krech; K. Yu. Platov

J. Appl. Phys. 84, 1476–1480 (1998) https://doi.org/10.1063/1.368211

Abstract

View articletitled, Small inductance approximation of phase locking in multijunction SQUIDs

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Magnetic flux distribution around Bi2212 superconducting single crystal: The paramagnetic resonance technique

H. Drulis; L. Folcik; M. Drulis

J. Appl. Phys. 84, 1481–1484 (1998) https://doi.org/10.1063/1.368212

Abstract

View articletitled, Magnetic flux distribution around Bi2212 superconducting single crystal: The paramagnetic resonance technique

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Quantification of local remanence magnetization in perpendicular magnetic recording film by scanning interference electron microscopy

Yoshio Takahashi; Yusuke Yajima

J. Appl. Phys. 84, 1485–1487 (1998) https://doi.org/10.1063/1.368213

Abstract

View articletitled, Quantification of local remanence magnetization in perpendicular magnetic recording film by scanning interference electron microscopy

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Negative remanent magnetization of fine particles with competing cubic and uniaxial anisotropies

J. Geshev; A. D. C. Viegas; J. E. Schmidt

J. Appl. Phys. 84, 1488–1492 (1998) https://doi.org/10.1063/1.368214

Abstract

View articletitled, Negative remanent magnetization of fine particles with competing cubic and uniaxial anisotropies

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Anomalous Hall resistivities of single-crystal ${Fe}_{16} N_{2}$ and $Fe–N$ martensite films epitaxially grown by molecular beam epitaxy

H. Takahashi; M. Komuro; M. Hiratani; M. Igarashi; Y. Sugita

J. Appl. Phys. 84, 1493–1498 (1998) https://doi.org/10.1063/1.368253

Abstract

View articletitled, Anomalous Hall resistivities of single-crystal <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi mathvariant="normal">16</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Fe–N</mi></math> martensite films epitaxially grown by molecular beam epitaxy

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Growth temperature dependence of the magnetic and structural properties of epitaxial Fe layers on MgO(001)

S. M. Jordan; J. F. Lawler; R. Schad; H. van Kempen

J. Appl. Phys. 84, 1499–1503 (1998) https://doi.org/10.1063/1.368215

Abstract

View articletitled, Growth temperature dependence of the magnetic and structural properties of epitaxial Fe layers on MgO(001)

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Structural and magnetic fourfold symmetry of Co/Cu multilayers electrodeposited on Si(001) substrates

M. Shima; L. Salamanca-Riba; T. P. Moffat; R. D. McMichael; L. J. Swartzendruber

J. Appl. Phys. 84, 1504–1507 (1998) https://doi.org/10.1063/1.368254

Abstract

View articletitled, Structural and magnetic fourfold symmetry of Co/Cu multilayers electrodeposited on Si(001) substrates

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CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

Influence of sample thickness on the performance of photostrictive ceramics

P. Poosanaas; A. Dogan; S. Thakoor; K. Uchino

J. Appl. Phys. 84, 1508–1512 (1998) https://doi.org/10.1063/1.368216

Abstract

View articletitled, Influence of sample thickness on the performance of photostrictive ceramics

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Underlying physics of the thermochemical $E$ model in describing low-field time-dependent dielectric breakdown in ${SiO}_{2}$ thin films

J. W. McPherson; H. C. Mogul

J. Appl. Phys. 84, 1513–1523 (1998) https://doi.org/10.1063/1.368217

Abstract

View articletitled, Underlying physics of the thermochemical <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">E</mi></math> model in describing low-field time-dependent dielectric breakdown in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> thin films

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Aggregate linear properties of ferroelectric ceramics and polycrystalline thin films: Calculation by the method of effective piezoelectric medium

N. A. Pertsev; A. G. Zembilgotov; R. Waser

J. Appl. Phys. 84, 1524–1529 (1998) https://doi.org/10.1063/1.368218

Abstract

View articletitled, Aggregate linear properties of ferroelectric ceramics and polycrystalline thin films: Calculation by the method of effective piezoelectric medium

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The simulation of switching in polycrystalline ferroelectric ceramics

Stephen C. Hwang; John E. Huber; Robert M. McMeeking; Norman A. Fleck

J. Appl. Phys. 84, 1530–1540 (1998) https://doi.org/10.1063/1.368219

Abstract

View articletitled, The simulation of switching in polycrystalline ferroelectric ceramics

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Numerical decomposition of a complex thermostimulated depolarization current spectrum in single time relaxation peaks

F. Faubert; M. Sanchez

J. Appl. Phys. 84, 1541–1545 (1998) https://doi.org/10.1063/1.368220

Abstract

View articletitled, Numerical decomposition of a complex thermostimulated depolarization current spectrum in single time relaxation peaks

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Space-charge characteristics in polyethylene

X. Wang; N. Yoshimura; K. Murata; Y. Tanaka; T. Takada

J. Appl. Phys. 84, 1546–1550 (1998) https://doi.org/10.1063/1.368221

Abstract

View articletitled, Space-charge characteristics in polyethylene

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Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers

J. Luyo-Alvarado; M. Meléndez-Lira; M. López-López; I. Hernández-Calderón; M. E. Constantino; H. Navarro-Contreras; M. A. Vidal; Y. Takagi; K. Samonji; H. Yonezu

J. Appl. Phys. 84, 1551–1557 (1998) https://doi.org/10.1063/1.368222

Abstract

View articletitled, Optical and structural characterization of ZnSe films grown by molecular beam epitaxy on GaAs substrates with and without GaAs buffer layers

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Infrared ${OH}^{-}$ absorptions in ${Sr}_{0.61} {Ba}_{0.39} {Nb}_{2} O_{6}$ crystals

Myeongkyu Lee; Howard S. Lee; Robert S. Feigelson

J. Appl. Phys. 84, 1558–1560 (1998) https://doi.org/10.1063/1.368255

Abstract

View articletitled, Infrared <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">OH</mi><mrow><mi>−</mi></mrow></msup></math> absorptions in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.61</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mtext>0.39</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>6</mn></mrow></msub></math> crystals

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Reflectivity study of hexagonal GaN films grown on GaAs: Surface roughness, interface layer, and refractive index

S. Shokhovets; R. Goldhahn; V. Cimalla; T. S. Cheng; C. T. Foxon

J. Appl. Phys. 84, 1561–1566 (1998) https://doi.org/10.1063/1.368223

Abstract

View articletitled, Reflectivity study of hexagonal GaN films grown on GaAs: Surface roughness, interface layer, and refractive index

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Optical properties of ${ZnAl}_{2} {Se}_{4},$ ${ZnAl}_{2} {Se}_{4} {:Co}^{2+},$ and ${ZnAl}_{2} {Se}_{4} {:Er}^{3+}$ single crystals

Tae-Young Park; Ji-Young Lim; Seok-Kyun Oh; Kwang-Ho Park; Ho-Jun Song; Wha-Tek Kim; Sung-Hyu Choe; Chang-Dae Kim; Chang-Sun Yoon

J. Appl. Phys. 84, 1567–1571 (1998) https://doi.org/10.1063/1.368224

Abstract

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Indium phosphide vapor phase epitaxy at high growth rates, growth kinetics, and characterization

J. Mimila-Arroyo; J. Dı́az-Reyes; A. Lusson

J. Appl. Phys. 84, 1572–1578 (1998) https://doi.org/10.1063/1.368225

Abstract

View articletitled, Indium phosphide vapor phase epitaxy at high growth rates, growth kinetics, and characterization

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Gallium nitride/conjugated polymer hybrid light emitting diodes: Performance and lifetime

Chi Zhang; Alan J. Heeger

J. Appl. Phys. 84, 1579–1582 (1998) https://doi.org/10.1063/1.368226

Abstract

View articletitled, Gallium nitride/conjugated polymer hybrid light emitting diodes: Performance and lifetime

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Photovoltaic measurement of the built-in potential in organic light emitting diodes and photodiodes

G. G. Malliaras; J. R. Salem; P. J. Brock; J. C. Scott

J. Appl. Phys. 84, 1583–1587 (1998) https://doi.org/10.1063/1.368227

Abstract

View articletitled, Photovoltaic measurement of the built-in potential in organic light emitting diodes and photodiodes

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Photoluminescence on ordered ${Ga}_{x} {In}_{1−x} {As}_{y} P_{1−y}$

G. Oelgart; A. Knauer; A. Oster; M. Weyers

J. Appl. Phys. 84, 1588–1594 (1998) https://doi.org/10.1063/1.368228

Abstract

View articletitled, Photoluminescence on ordered <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">P</mi><mrow><mtext>1−y</mtext></mrow></msub></math>

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Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes

C. H. Chan; Y. F. Chen; M. C. Chen; H. H. Lin; G. J. Jan; Y. H. Chen

J. Appl. Phys. 84, 1595–1601 (1998) https://doi.org/10.1063/1.368229

Abstract

View articletitled, Photoreflectance spectroscopy of strained-layer (111)B InGaAs/GaAs quantum well diodes

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Features and technology of ferroelectric electron emission

H. Riege; I. Boscolo; J. Handerek; U. Herleb

J. Appl. Phys. 84, 1602–1617 (1998) https://doi.org/10.1063/1.368230

Abstract

View articletitled, Features and technology of ferroelectric electron emission

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Field emission from chemical vapor deposited diamond and diamond-like carbon films: Investigations of surface damage and conduction mechanisms

Paul W. May; Stefan Höhn; Michael N. R. Ashfold; Wang N. Wang; Neil A. Fox; Tim J. Davis; J. W. Steeds

J. Appl. Phys. 84, 1618–1625 (1998) https://doi.org/10.1063/1.368231

Abstract

View articletitled, Field emission from chemical vapor deposited diamond and diamond-like carbon films: Investigations of surface damage and conduction mechanisms

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CROSS-DISCIPLINARY PHYSICS (PACS 81-98)

Formation of carbon nanotubes and their filling with metallic fibers on ion-emitting field anodes

F. Okuyama; T. Hayashi; Y. Fujimoto

J. Appl. Phys. 84, 1626–1631 (1998) https://doi.org/10.1063/1.368232

Abstract

View articletitled, Formation of carbon nanotubes and their filling with metallic fibers on ion-emitting field anodes

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Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals

J. V. Grahn; P.-E. Hellberg; E. Olsson

J. Appl. Phys. 84, 1632–1642 (1998) https://doi.org/10.1063/1.368256

Abstract

View articletitled, Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals

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Growth of lamellar eutectic dendrites in undercooled melts

R. Goetzinger; M. Barth; D. M. Herlach

J. Appl. Phys. 84, 1643–1649 (1998) https://doi.org/10.1063/1.368233

Abstract

View articletitled, Growth of lamellar eutectic dendrites in undercooled melts

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Reduction of the extended defect density in molecular beam epitaxy grown ZnSe based II-VI heterostructures by the use of a BeTe buffer layer

F. Fischer; M. Keller; T. Gerhard; T. Behr; T. Litz; H. J. Lugauer; M. Keim; G. Reuscher; T. Baron; A. Waag; G. Landwehr

J. Appl. Phys. 84, 1650–1654 (1998) https://doi.org/10.1063/1.368234

Abstract

View articletitled, Reduction of the extended defect density in molecular beam epitaxy grown ZnSe based II-VI heterostructures by the use of a BeTe buffer layer

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Model for the chemical erosion of graphite due to low-energy $H^{+}$ and $D^{+}$ impact

B. V. Mech; A. A. Haasz; J. W. Davis

J. Appl. Phys. 84, 1655–1669 (1998) https://doi.org/10.1063/1.368235

Abstract

View articletitled, Model for the chemical erosion of graphite due to low-energy <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">H</mi><mrow><mi mathvariant="normal">+</mi></mrow></msup></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">D</mi><mrow><mi mathvariant="normal">+</mi></mrow></msup></math> impact

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Microwave and magnetooptic measurements of nonlinear dispersive magnetostatic waves in a yttrium-iron-garnet-gadolinium-gallium-garnet waveguide

C. S. Tsai; D. Young; S. A. Nikitov

J. Appl. Phys. 84, 1670–1679 (1998) https://doi.org/10.1063/1.368236

Abstract

View articletitled, Microwave and magnetooptic measurements of nonlinear dispersive magnetostatic waves in a yttrium-iron-garnet-gadolinium-gallium-garnet waveguide

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Micromachined YBaCuO capacitor structures as uncooled pyroelectric infrared detectors

Donald P. Butler; Zeynep Çelik-Butler; Agha Jahanzeb; John E. Gray; Christine M. Travers

J. Appl. Phys. 84, 1680–1687 (1998) https://doi.org/10.1063/1.368257

Abstract

View articletitled, Micromachined YBaCuO capacitor structures as uncooled pyroelectric infrared detectors

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Surface effects on current mechanisms in $6H -SiC$ $n^{+} {pp}^{+}$ structures passivated with a deposited oxide

S. Ortolland; C. Raynaud; M. L. Locatelli; J. P. Chante; A. Senes

J. Appl. Phys. 84, 1688–1692 (1998) https://doi.org/10.1063/1.368237

Abstract

View articletitled, Surface effects on current mechanisms in <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">6H</mtext><mi mathvariant="normal" xmlns="">-SiC</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>n</mi><mrow><mi>+</mi></mrow></msup><msup xmlns=""><mi>pp</mi><mrow><mi>+</mi></mrow></msup></math> structures passivated with a deposited oxide

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Characterization of carrier concentration and stress in GaAs metal-semiconductor field-effect transistor by cathodoluminescence spectroscopy

M. Yoshikawa; K. Iwagami; H. Ishida

J. Appl. Phys. 84, 1693–1696 (1998) https://doi.org/10.1063/1.368238

Abstract

View articletitled, Characterization of carrier concentration and stress in GaAs metal-semiconductor field-effect transistor by cathodoluminescence spectroscopy

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Quasidrift limited field-effect current in polycrystalline silicon: Wide grain boundary approximation

W. Eccleston

J. Appl. Phys. 84, 1697–1702 (1998) https://doi.org/10.1063/1.368239

Abstract

View articletitled, Quasidrift limited field-effect current in polycrystalline silicon: Wide grain boundary approximation

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COMMUNICATIONS

Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves

A. Kazimirov; G. Scherb; J. Zegenhagen; T.-L. Lee; M. J. Bedzyk; M. K. Kelly; H. Angerer; O. Ambacher

J. Appl. Phys. 84, 1703–1705 (1998) https://doi.org/10.1063/1.368240

Abstract

View articletitled, Polarity determination of a GaN thin film on sapphire (0001) with x-ray standing waves

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Negative ion emission from a stainless steel surface due to positive ion collisions

S. G. Walton; R. L. Champion; Yicheng Wang

J. Appl. Phys. 84, 1706–1707 (1998) https://doi.org/10.1063/1.368241

Abstract

View articletitled, Negative ion emission from a stainless steel surface due to positive ion collisions

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ERRATA

Erratum: “Strain dependence of hole mass and optical anisotropy in (110) quantum wells” [J. Appl. Phys. 82, 5711 (1997)]

L.-H. Peng

J. Appl. Phys. 84, 1708 (1998) https://doi.org/10.1063/1.368242

View articletitled, Erratum: “Strain dependence of hole mass and optical anisotropy in (110) quantum wells” [J. Appl. Phys. 82, 5711 (1997)]

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Erratum: “Probing ultrafast carrier and phonon dynamics in semiconductors” [J. Appl. Phys. 83, 1789 (1998)]

Andreas Othonos

J. Appl. Phys. 84, 1708 (1998) https://doi.org/10.1063/1.368243

View articletitled, Erratum: “Probing ultrafast carrier and phonon dynamics in semiconductors” [J. Appl. Phys. 83, 1789 (1998)]

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Issues

GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)

CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

CROSS-DISCIPLINARY PHYSICS (PACS 81-98)

COMMUNICATIONS

ERRATA

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