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CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

High power radio frequency generation by relativistic beams in dielectric structures

P. Schoessow; M. E. Conde; W. Gai; R. Konecny; J. Power; J. Simpson

J. Appl. Phys. 84, 663–667 (1998) https://doi.org/10.1063/1.368119

Abstract

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Measurement of sound velocity and thickness of thin samples by time-resolved acoustic microscopy

Volker Hänel

J. Appl. Phys. 84, 668–670 (1998) https://doi.org/10.1063/1.368120

Abstract

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Paratellurite: Propagation of the slow shear wave in the (001) plane. New formulations for the acoustic velocity and divergence

J. C. Kastelik; M. Gharbi; M. G. Gazalet

J. Appl. Phys. 84, 671–674 (1998) https://doi.org/10.1063/1.368121

Abstract

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Reconstruction theory of thermal conductivity depth profiles by the modulated photoreflectance technique

M. H. Xu; J. C. Cheng; S. Y. Zhang

J. Appl. Phys. 84, 675–682 (1998) https://doi.org/10.1063/1.368122

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The influence of surface currents on pattern-dependent charging and notching

Gyeong S. Hwang; Konstantinos P. Giapis

J. Appl. Phys. 84, 683–689 (1998) https://doi.org/10.1063/1.368123

Abstract

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CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

Pulsed laser-induced single event upset and charge collection measurements as a function of optical penetration depth

Joseph S. Melinger; Dale McMorrow; A. B. Campbell; Stephen Buchner; Lan Hu Tran; A. R. Knudson; W. R. Curtice

J. Appl. Phys. 84, 690–703 (1998) https://doi.org/10.1063/1.368124

Abstract

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Capture cross sections of electron irradiation induced defects in 6H–SiC

C. Hemmingsson; N. T. Son; O. Kordina; E. Janzén; J. L. Lindström

J. Appl. Phys. 84, 704–708 (1998) https://doi.org/10.1063/1.368125

Abstract

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Alloy effects in boron doped Si-rich SiGe bulk crystals

M. Franz; K. Pressel; P. Gaworzewski

J. Appl. Phys. 84, 709–712 (1998) https://doi.org/10.1063/1.368126

Abstract

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Evaluation of precipitate densities and capture radii from the analysis of precipitation kinetics

H. Hieslmair; A. A. Istratov; T. Heiser; E. R. Weber

J. Appl. Phys. 84, 713–717 (1998) https://doi.org/10.1063/1.368127

Abstract

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Modeling of nucleation and growth of voids in silicon

P. S. Plekhanov; U. M. Gösele; T. Y. Tan

J. Appl. Phys. 84, 718–726 (1998) https://doi.org/10.1063/1.368128

Abstract

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The effect of the electron irradiation on the electrical properties of thin polycrystalline CdS layers

V. Ruxandra; S. Antohe

J. Appl. Phys. 84, 727–733 (1998) https://doi.org/10.1063/1.368129

Abstract

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The spall strength of alumina ceramics

N. H. Murray; N. K. Bourne; Z. Rosenberg; J. E. Field

J. Appl. Phys. 84, 734–738 (1998) https://doi.org/10.1063/1.368130

Abstract

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Observations of the Hugoniot curves for glasses as measured by embedded stress gauges

Jeremy Millett; Neil Bourne; Zvi Rosenberg

J. Appl. Phys. 84, 739–741 (1998) https://doi.org/10.1063/1.368131

Abstract

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Effect of ${Al}_{3} Ti$ intermetallic compound on electromigration lifetime of Al alloy interconnections

T. Kouno; M. Hosaka; H. Niwa; M. Yamada

J. Appl. Phys. 84, 742–750 (1998) https://doi.org/10.1063/1.368132

Abstract

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Structural analysis of annealed $Al /n- InP (100)$ interfaces: Different types of indium heteroepitaxial growth on InP(111)A and InP(111)B planes

J. Kečkéš; B. Ortner; J. Jakabovič; J. Kováč

J. Appl. Phys. 84, 751–755 (1998) https://doi.org/10.1063/1.368133

Abstract

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Quantitative interfacial profiles in CdTe/Mn(Mg)Te heterostructures

M. Charleux; J. L. Rouvière; J. M. Hartmann; A. Bourret

J. Appl. Phys. 84, 756–764 (1998) https://doi.org/10.1063/1.368134

Abstract

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Interface quality and electron transfer at the GaInP on GaAs heterojunction

O. Schuler; O. Dehaese; X. Wallart; F. Mollot

J. Appl. Phys. 84, 765–769 (1998) https://doi.org/10.1063/1.368135

Abstract

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Time- and temperature-dependent wetting behavior of eutectic SnPb on Cu leadframes plated with Pd/Ni and Au/Pd/Ni thin films

P. G. Kim; K. N. Tu; D. C. Abbott

J. Appl. Phys. 84, 770–775 (1998) https://doi.org/10.1063/1.368136

Abstract

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Enhanced mechanical hardness in epitaxial nonisostructural Mo/NbN and W/NbN superlattices

A. Madan; Yun-yu Wang; S. A. Barnett; C. Engström; H. Ljungcrantz; L. Hultman; M. Grimsditch

J. Appl. Phys. 84, 776–785 (1998) https://doi.org/10.1063/1.368137

Abstract

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Defect structure of carbon rich $a$ -SiC:H films and the influence of gas and heat treatments

T. Friessnegg; M. Boudreau; P. Mascher; A. Knights; P. J. Simpson; W. Puff

J. Appl. Phys. 84, 786–795 (1998) https://doi.org/10.1063/1.368138

Abstract

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CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

Modeling the conductivity of highly consolidated, bi-connected porous rocks

Pham Duc Chinh

J. Appl. Phys. 84, 796–798 (1998) https://doi.org/10.1063/1.368139

Abstract

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Alternating current conductivity and dielectric dispersion in copper-silica nanocomposites synthesized by electrodeposition

S. Banerjee; D. Chakravorty

J. Appl. Phys. 84, 799–805 (1998) https://doi.org/10.1063/1.368140

Abstract

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Transport properties of HCl doped polyaniline and polyaniline–methyl cellulose dispersion

M. Ghosh; A. Barman; S. K. De; S. Chatterjee

J. Appl. Phys. 84, 806–811 (1998) https://doi.org/10.1063/1.368141

Abstract

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The Ngai coupling model of relaxation: Generalizations, alternatives, and their use in the analysis of non-Arrhenius conductivity in glassy, fast-ionic materials

J. Ross Macdonald

J. Appl. Phys. 84, 812–827 (1998) https://doi.org/10.1063/1.368142

Abstract

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Probing electrical conduction behavior of ${BaSnO}_{3}$

Shail Upadhyay; Ashok Kumar Sahu; Devendra Kumar; Om Parkash

J. Appl. Phys. 84, 828–832 (1998) https://doi.org/10.1063/1.368143

Abstract

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Device model investigation of single layer organic light emitting diodes

B. K. Crone; P. S. Davids; I. H. Campbell; D. L. Smith

J. Appl. Phys. 84, 833–842 (1998) https://doi.org/10.1063/1.368144

Abstract

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The angular dependence of the planar Hall effect in Co-Ni films

S. U. Jen; K. P. Huang; J. C. Lee

J. Appl. Phys. 84, 843–847 (1998) https://doi.org/10.1063/1.368145

Abstract

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Charge injection into light-emitting diodes: Theory and experiment

V. I. Arkhipov; E. V. Emelianova; Y. H. Tak; H. Bässler

J. Appl. Phys. 84, 848–856 (1998) https://doi.org/10.1063/1.368146

Abstract

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Ultrafast coherent oscillations of electron wave packet in a step-doped stepped quantum well structure

Jihad M. Mohaidat

J. Appl. Phys. 84, 857–860 (1998) https://doi.org/10.1063/1.368147

Abstract

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Ohmic $Pd / Zn / Au / {LaB}_{6} / Au$ contacts on $p$ -type ${In}_{0.53} {Ga}_{0.47} As :$ Electrical and metallurgical properties

P. Ressel; P. W. Leech; P. Veit; E. Nebauer; A. Klein; E. Kuphal; G. K. Reeves; H. L. Hartnagel

J. Appl. Phys. 84, 861–869 (1998) https://doi.org/10.1063/1.368148

Abstract

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Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; M. Shin; M. Skowronski; D. W. Greve

J. Appl. Phys. 84, 870–876 (1998) https://doi.org/10.1063/1.368149

Abstract

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Persistent photoconductivity in SiGe/Si quantum wells

L. C. Tsai; C. F. Huang; J. C. Fan; Y. H. Chang; Y. F. Chen; W. C. Tsai; C. Y. Chang

J. Appl. Phys. 84, 877–880 (1998) https://doi.org/10.1063/1.368150

Abstract

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Ni and Ni silicide Schottky contacts on $n$ -GaN

Q. Z. Liu; L. S. Yu; F. Deng; S. S. Lau; J. M. Redwing

J. Appl. Phys. 84, 881–886 (1998) https://doi.org/10.1063/1.368151

Abstract

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Electronic structure of layered silver carboxylates

Monica Chadha; Michael E. Dunnigan; M. R. V. Sahyun; Takuzo Ishida

J. Appl. Phys. 84, 887–892 (1998) https://doi.org/10.1063/1.368152

Abstract

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Excitonic states of weakly confining quantum wires

S. Jaziri; R. Ferreira

J. Appl. Phys. 84, 893–900 (1998) https://doi.org/10.1063/1.368153

Abstract

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Temperature-dependent magnetic anisotropy in Ni nanowires

J. Jorritsma; J. A. Mydosh

J. Appl. Phys. 84, 901–906 (1998) https://doi.org/10.1063/1.368154

Abstract

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An analytic method for tunneling lifetime in the double-barrier quantum well

J. U. Kim; Hong H. Lee

J. Appl. Phys. 84, 907–910 (1998) https://doi.org/10.1063/1.368168

Abstract

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Microstructural and electrical investigation of Pd/Ge/Ti/Au ohmic contact to pseudomorphic high electron mobility transistor with undoped cap layer

Yi-Tae Kim; Jong-Lam Lee; Byung-Teak Lee

J. Appl. Phys. 84, 911–917 (1998) https://doi.org/10.1063/1.368155

Abstract

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Resonant tunneling in step-barrier structures under an applied electric field

Yong Guo; Bing-Lin Gu; Jing-Zhi Yu; Zhong Zeng; Yoshiyuki Kawazoe

J. Appl. Phys. 84, 918–924 (1998) https://doi.org/10.1063/1.368156

Abstract

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Magnetic properties of the normal state of ${YBa}_{2} {Cu}_{3−x} {Li}_{x} O_{z}$

M. Nicolas-Francillon; F. Maury; R. Ollitrault-Fichet; M. Nanot; P. Legeay

J. Appl. Phys. 84, 925–933 (1998) https://doi.org/10.1063/1.368157

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Magnetic anisotropy and microstructure in molecular beam epitaxial FePt (110)/MgO (110)

R. F. C. Farrow; D. Weller; R. F. Marks; M. F. Toney; David J. Smith; M. R. McCartney

J. Appl. Phys. 84, 934–939 (1998) https://doi.org/10.1063/1.368158

Abstract

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Coexistence of magnetism and superconductivity in epitaxial GdN/W/NbN/W (100) and related NbN/W (100) multilayers

R. M. Osgood, III; J. E. Pearson; C. H. Sowers; S. D. Bader

J. Appl. Phys. 84, 940–944 (1998) https://doi.org/10.1063/1.368169

Abstract

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Microstructural origin of soft magnetic properties of sendust films prepared by $N_{2}$ reactive sputtering

Yingjian Chen; Patrick J. Ryan; James F. Dolejsi; Maithri Rao; David E. Laughlin; Mark H. Kryder; Ghanim Al-Jumaily; Zhijun Yang

J. Appl. Phys. 84, 945–952 (1998) https://doi.org/10.1063/1.368159

Abstract

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Structure and magnetoresistance effect in granular Ag–Ni alloys prepared by gas flow condensation technique

L. Dimesso; H. Hahn

J. Appl. Phys. 84, 953–957 (1998) https://doi.org/10.1063/1.368160

Abstract

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Studies of coupled metallic magnetic thin-film trilayers

S. M. Rezende; C. Chesman; M. A. Lucena; A. Azevedo; F. M. de Aguiar; S. S. P. Parkin

J. Appl. Phys. 84, 958–972 (1998) https://doi.org/10.1063/1.368161

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Morphology and magnetic analysis of MnSb films grown by hot-wall epitaxy

B. L. Low; C. K. Ong; G. C. Han; H. Gong; T. Y. F. Liew; H. Tatsuoka; H. Kuwabara; Z. Yang

J. Appl. Phys. 84, 973–977 (1998) https://doi.org/10.1063/1.368162

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Resonant tunneling spin valve: A novel magnetoelectronics device

P. Bruno; J. Wunderlich

J. Appl. Phys. 84, 978–982 (1998) https://doi.org/10.1063/1.368163

Abstract

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CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

Dielectric properties of ${Ba(Ti}_{1−y} Y_{y}) O_{3}$ ceramics

Zhi Jing; Chen Ang; Zhi Yu; P. M. Vilarinho; J. L. Baptista

J. Appl. Phys. 84, 983–986 (1998) https://doi.org/10.1063/1.368164

Abstract

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Electrical relaxation mechanism in unconventional bismuth cuprate glasses

S. Hazra; A. Ghosh

J. Appl. Phys. 84, 987–992 (1998) https://doi.org/10.1063/1.368165

Abstract

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Microwave losses in incipient ferroelectrics as functions of the temperature and the biasing field

Orest G. Vendik; Leon T. Ter-Martirosyan; Svetlana P. Zubko

J. Appl. Phys. 84, 993–998 (1998) https://doi.org/10.1063/1.368166

Abstract

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Study on ferroelectric domains in ${BaTiO}_{3}$ crystalline films and bulk crystals by atomic force and scanning electron microscopies

S. Tsunekawa; T. Fukuda; T. Ozaki; Y. Yoneda; T. Okabe; H. Terauchi

J. Appl. Phys. 84, 999–1002 (1998) https://doi.org/10.1063/1.368167

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Nonspecular x-ray scattering in a multilayer-coated imaging system

D. G. Stearns; D. P. Gaines; D. W. Sweeney; E. M. Gullikson

J. Appl. Phys. 84, 1003–1028 (1998) https://doi.org/10.1063/1.368098

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Elemental characterization of electroluminescent SrS:Ce thin films

Wei-Min Li; Mikko Ritala; Markku Leskelä; Reijo Lappalainen; Janne Jokinen; Erkki Soininen; Bernd Hüttl; Erja Nykänen; Lauri Niinistö

J. Appl. Phys. 84, 1029–1035 (1998) https://doi.org/10.1063/1.368099

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Effects of hydrogen plasma treatment on the 1.54 μm luminescence of erbium-doped porous silicon

Tohru Dejima; Riichiro Saito; Shigemi Yugo; Hideo Isshiki; Tadamasa Kimura

J. Appl. Phys. 84, 1036–1040 (1998) https://doi.org/10.1063/1.368100

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A luminescence versus temperature study of fresh and oxidized porous silicon layers under different atmospheres

S. Létant; J. C. Vial

J. Appl. Phys. 84, 1041–1046 (1998) https://doi.org/10.1063/1.368101

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Strain effect and photoluminescence of ZnS epilayers grown on GaP(100) substrates by hot-wall epitaxy

Sungun Nam; Byungsung O; Ki-Seon Lee; Yong Dae Choi; Chang-Soo Kim

J. Appl. Phys. 84, 1047–1051 (1998) https://doi.org/10.1063/1.368102

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Spectral decomposition of excitons confined in a quantum dot by a parabolic potential and under the influence of an external field

Bi Qiao; Harry E. Ruda

J. Appl. Phys. 84, 1052–1058 (1998) https://doi.org/10.1063/1.368103

Abstract

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Polarized Raman and photoluminescence study on silicon quantum wires

D. Papadimitriou; A. G. Nassiopoulou

J. Appl. Phys. 84, 1059–1063 (1998) https://doi.org/10.1063/1.368104

Abstract

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Microanalysis by monochromatic microprobe x-ray fluorescence—physical basis, properties, and future prospects

Z. W. Chen; D. B. Wittry

J. Appl. Phys. 84, 1064–1073 (1998) https://doi.org/10.1063/1.368105

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Fast Fourier transformation of piezoreflectance in δ-doped GaAs

T. M. Hsu; W.-H. Chang; D. H. Liao; W. C. Lee

J. Appl. Phys. 84, 1074–1080 (1998) https://doi.org/10.1063/1.368106

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Field-emission current from diamond film deposited on molybdenum

Meiyong Liao; Zhengang Zhang; Wanlu Wang; Kejun Liao

J. Appl. Phys. 84, 1081–1084 (1998) https://doi.org/10.1063/1.368096

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Photon emission excited in paraffin-passivated GaAs surfaces by scanning tunneling microscopy

A. Carladous; R. Coratger; G. Seine; F. Ajustron; J. Beauvillain

J. Appl. Phys. 84, 1085–1089 (1998) https://doi.org/10.1063/1.368107

Abstract

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Monitoring of the ion energy and current density at the surface of films grown by excimer laser ablation

Y. Franghiadakis; C. Fotakis; P. Tzanetakis

J. Appl. Phys. 84, 1090–1094 (1998) https://doi.org/10.1063/1.368097

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CROSS-DISCIPLINARY PHYSICS (PACS 81-98)

Cathodoluminescence study of disordering of GaAs/AlGaAs quantum wells using an AlAs native oxide and thermal annealing technique

X. Zhang; D. H. Rich; C.-K. Lin; P. D. Dapkus

J. Appl. Phys. 84, 1095–1100 (1998) https://doi.org/10.1063/1.368108

Abstract

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Structural and magnetic properties of ball milled copper ferrite

G. F. Goya; H. R. Rechenberg; J. Z. Jiang

J. Appl. Phys. 84, 1101–1108 (1998) https://doi.org/10.1063/1.368109

Abstract

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Fundamental efficiency limit of solar power plants

Th. Graf

J. Appl. Phys. 84, 1109–1112 (1998) https://doi.org/10.1063/1.368110

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Measurement of band offsets and interface charges by the $C–V$ matching method

Y. Nemirovsky; G. Gordon; D. Goren

J. Appl. Phys. 84, 1113–1120 (1998) https://doi.org/10.1063/1.368111

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Simple Ru electrode scheme for ferroelectric $(Pb, La)(Zr, Ti) O_{3}$ capacitors directly on silicon

Jordana Bandaru; Timothy Sands; Loucas Tsakalakos

J. Appl. Phys. 84, 1121–1125 (1998) https://doi.org/10.1063/1.368112

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Complex dynamics of resistively and inductively shunted Josephson junctions

A. B. Cawthorne; C. B. Whan; C. J. Lobb

J. Appl. Phys. 84, 1126–1132 (1998) https://doi.org/10.1063/1.368113

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Dependence of gate control on the aspect ratio in metal/metal-oxide/metal tunnel transistors

F. A. Buot; R. W. Rendell; E. S. Snow; P. M. Campbell; D. Park; C. R. K. Marrian; R. Magno

J. Appl. Phys. 84, 1133–1139 (1998) https://doi.org/10.1063/1.368114

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Comparison of a rate-equation model with experiment for the resonant tunneling diode in the scattering-dominated regime

J. P. Mattia; A. L. McWhorter; R. J. Aggarwal; F. Rana; E. R. Brown; P. Maki

J. Appl. Phys. 84, 1140–1148 (1998) https://doi.org/10.1063/1.368115

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COMMUNICATIONS

Electrical resistivity of copper-silica nanocomposites synthesized by electrodeposition

S. Banerjee; D. Chakravorty

J. Appl. Phys. 84, 1149–1151 (1998) https://doi.org/10.1063/1.368116

Abstract

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Aluminum-implantation-induced deep levels in $n$ -type 6H–SiC

S. Fung; M. Gong; C. D. Beling; G. Brauer; H. Wirth; W. Skorupa

J. Appl. Phys. 84, 1152–1154 (1998) https://doi.org/10.1063/1.368117

Abstract

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Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing

T. Suski; J. Jun; M. Leszczyński; H. Teisseyre; S. Strite; A. Rockett; A. Pelzmann; M. Kamp; K. J. Ebeling

J. Appl. Phys. 84, 1155–1157 (1998) https://doi.org/10.1063/1.368118

Abstract

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ADDENDA

Addendum: “Hysteresis and self-sustained oscillations in space charge limited currents” [J. Appl. Phys. 83, 2958 (1998)]

Yu. N. Gartstein; P. S. Ramesh

J. Appl. Phys. 84, 1158 (1998) https://doi.org/10.1063/1.368170

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Issues

CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

CROSS-DISCIPLINARY PHYSICS (PACS 81-98)

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