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Issues
15 April 1998
ISSN 0021-8979
EISSN 1089-7550
In this Issue
GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)
Vertical metrology using scanning-probe microscopes: Imaging distortions and measurement repeatability
J. Appl. Phys. 83, 3952–3971 (1998)
https://doi.org/10.1063/1.367151
Optimal control of ultrasoft cantilevers for force microscopy
J. Appl. Phys. 83, 3972–3977 (1998)
https://doi.org/10.1063/1.367152
Thermal-response time of superconducting transition-edge microcalorimeters
J. Appl. Phys. 83, 3978–3985 (1998)
https://doi.org/10.1063/1.367153
CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)
Effect of poling temperature on optical second harmonic intensity of sodium zinc tellurite glasses
J. Appl. Phys. 83, 3986–3990 (1998)
https://doi.org/10.1063/1.367154
Cavity-locked ring-down spectroscopy
J. Appl. Phys. 83, 3991–3997 (1998)
https://doi.org/10.1063/1.367155
Polarization properties of light emitted by a bent optical fiber probe and polarization contrast in scanning near-field optical microscopy
Yasuyuki Mitsuoka; Kunio Nakajima; Katsunori Homma; Norio Chiba; Hiroshi Muramatsu; Tatsuaki Ataka; Katsuaki Sato
J. Appl. Phys. 83, 3998–4003 (1998)
https://doi.org/10.1063/1.367223
An increase of the spall strength in aluminum, copper, and Metglas at strain rates larger than
E. Moshe; S. Eliezer; E. Dekel; A. Ludmirsky; Z. Henis; M. Werdiger; I. B. Goldberg; N. Eliaz; D. Eliezer
J. Appl. Phys. 83, 4004–4011 (1998)
https://doi.org/10.1063/1.367222
Determination of the size, optical index and density of particles in an argon–silane radio-frequency discharge
J. Appl. Phys. 83, 4012–4017 (1998)
https://doi.org/10.1063/1.367989
Spatial characteristics of electron swarm parameters in gases
J. Appl. Phys. 83, 4024–4029 (1998)
https://doi.org/10.1063/1.367157
Measurements of relative BCl density in -containing inductively coupled radio frequency plasmas
J. Appl. Phys. 83, 4030–4036 (1998)
https://doi.org/10.1063/1.367158
CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)
Double crystal x-ray diffraction simulations of diffusion in semiconductor microstructures
J. Appl. Phys. 83, 4037–4041 (1998)
https://doi.org/10.1063/1.367159
Electrically detected magnetic resonance signal from iron contaminated Czochralski silicon crystal
J. Appl. Phys. 83, 4042–4048 (1998)
https://doi.org/10.1063/1.367160
Deep levels and minority carrier lifetime in proton irradiated silicon pin diode
J. Appl. Phys. 83, 4069–4074 (1998)
https://doi.org/10.1063/1.367226
Characterization of optically active defects created by noble gas ion bombardment of silicon
J. Appl. Phys. 83, 4075–4080 (1998)
https://doi.org/10.1063/1.367227
A biaxial film-compensated thin homogeneous cell for reflective liquid crystal display
J. Appl. Phys. 83, 4096–4100 (1998)
https://doi.org/10.1063/1.367163
Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon
J. Appl. Phys. 83, 4106–4110 (1998)
https://doi.org/10.1063/1.367165
Structural, optical, and electrical properties of hydrogenated amorphous silicon germanium alloys
J. Appl. Phys. 83, 4111–4123 (1998)
https://doi.org/10.1063/1.367229
Temperature dependence of the elastic constants of solid and liquid obtained by laser ultrasound
J. Appl. Phys. 83, 4124–4133 (1998)
https://doi.org/10.1063/1.367166
Design and modeling of precision solid liner experiments on Pegasus
J. Appl. Phys. 83, 4146–4159 (1998)
https://doi.org/10.1063/1.367230
Growth of Si-doped GaAs(110) thin films by molecular beam epitaxy; Si site occupation and the role of arsenic
J. Appl. Phys. 83, 4160–4167 (1998)
https://doi.org/10.1063/1.367169
InGaAs island shapes and adatom migration behavior on (100), (110), (111), and (311) GaAs surfaces
J. Appl. Phys. 83, 4168–4172 (1998)
https://doi.org/10.1063/1.367170
Chaotic feature of silicon melt turbulence and its influence on crystal growth
J. Appl. Phys. 83, 4180–4186 (1998)
https://doi.org/10.1063/1.367172
Oriented diamond growth on silicon (111) using a solid carbon source
J. Appl. Phys. 83, 4187–4192 (1998)
https://doi.org/10.1063/1.367173
CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)
Measurement of electrical activation energy in boron-doped diamond using the flatband capacitance method
J. Appl. Phys. 83, 4202–4205 (1998)
https://doi.org/10.1063/1.367175
Temperature and injection dependence of the Shockley–Read–Hall lifetime in electron-irradiated -type silicon
J. Appl. Phys. 83, 4206–4212 (1998)
https://doi.org/10.1063/1.367176
Photofield interface impurity spectroscopy in blocked impurity band Si:B structures
S. Pasquier; C. Mény; L. Asadauskas; J. Léotin; B. A. Aronzon; V. V. Rylkov; V. Conédéra; N. Fabre; J. L. Régolini; C. Morin
J. Appl. Phys. 83, 4222–4229 (1998)
https://doi.org/10.1063/1.367178
Electrical transport in paratoluene sulfonate doped polypyrrole films at low temperature
J. Appl. Phys. 83, 4230–4235 (1998)
https://doi.org/10.1063/1.367179
Voltage-induced evolution of emission spectra in organic light-emitting diodes
J. Appl. Phys. 83, 4242–4248 (1998)
https://doi.org/10.1063/1.367181
GaN (0001)- surfaces: Composition and electronic properties
J. Appl. Phys. 83, 4249–4252 (1998)
https://doi.org/10.1063/1.367182
Band discontinuities and local interface composition in BeTe/ZnSe heterostructures
J. Appl. Phys. 83, 4253–4257 (1998)
https://doi.org/10.1063/1.367231
Confined electronic states in superlattices: A resonance Raman study
J. Appl. Phys. 83, 4258–4263 (1998)
https://doi.org/10.1063/1.367183
Orientation dependence of strained single quantum well luminescence
P. Tomasini; K. Arai; F. Lu; Z. Q. Zhu; T. Sekiguchi; M. Suezawa; T. Yao; M. Y. Shen; T. Goto; T. Yasuda; Y. Segawa
J. Appl. Phys. 83, 4272–4278 (1998)
https://doi.org/10.1063/1.367185
Simulation of mid-infrared HgTe/CdTe quantum-well vertical-cavity surface-emitting lasers
J. Appl. Phys. 83, 4286–4291 (1998)
https://doi.org/10.1063/1.367187
Interfacial intermixing and arsenic incorporation in thin InP barriers embedded in
J. Appl. Phys. 83, 4299–4302 (1998)
https://doi.org/10.1063/1.367189
Band bending and field penetration on surfaces of ultrawide band gap semiconductors: Diamond and aluminum nitride
J. Appl. Phys. 83, 4303–4308 (1998)
https://doi.org/10.1063/1.367190
Analysis of the impedance response due to surface states at the semiconductor/solution interface
J. Appl. Phys. 83, 4309–4323 (1998)
https://doi.org/10.1063/1.367191
Effect of the heterointerface on the spin splitting in modulation doped quantum wells for
J. Appl. Phys. 83, 4324–4333 (1998)
https://doi.org/10.1063/1.367192
Theory of two magnon scattering microwave relaxation and ferromagnetic resonance linewidth in magnetic thin films
J. Appl. Phys. 83, 4344–4365 (1998)
https://doi.org/10.1063/1.367194
Crystallographic and magnetic properties of nitride (R=Y, Ce, Nd, Sm, Gd, Tb, and Dy)
J. Appl. Phys. 83, 4366–4372 (1998)
https://doi.org/10.1063/1.367221
CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)
Dielectric behavior of nanocomposites of lead sulphide and ferroelectric glass ceramics
J. Appl. Phys. 83, 4380–4384 (1998)
https://doi.org/10.1063/1.367196
Enhancement effect of photoluminescence in assemblies of nano-ZnO particles/silica aerogels
J. Appl. Phys. 83, 4389–4391 (1998)
https://doi.org/10.1063/1.367198
The threshold effect of incident light intensity for the photorefractive light-induced scattering in ( ) crystals
J. Appl. Phys. 83, 4392–4396 (1998)
https://doi.org/10.1063/1.367199
Photocurrent and photoluminescence measurements in the near-band-edge region of GaN
J. Appl. Phys. 83, 4397–4402 (1998)
https://doi.org/10.1063/1.367232
Effect of majority carrier space charges on minority carrier injection in dye doped polymer light-emitting devices
J. Appl. Phys. 83, 4403–4409 (1998)
https://doi.org/10.1063/1.367200
Differential reflection dynamics in strained-multiple-quantum wells
J. Appl. Phys. 83, 4430–4435 (1998)
https://doi.org/10.1063/1.367202
Absorption spectra and electronic structure of
J. Appl. Phys. 83, 4436–4441 (1998)
https://doi.org/10.1063/1.367203
Oscillation of polar Kerr rotation in PtCu/Co multilayers
J. Appl. Phys. 83, 4442–4446 (1998)
https://doi.org/10.1063/1.367204
Thermionic electron emission from narrow band-gap semiconductors under picosecond laser excitation
J. Appl. Phys. 83, 4462–4465 (1998)
https://doi.org/10.1063/1.367207
Surface instability of multipulse laser ablation on a metallic target
J. Appl. Phys. 83, 4466–4471 (1998)
https://doi.org/10.1063/1.367208
CROSS-DISCIPLINARY PHYSICS (PACS 81-98)
Ion assisted growth and characterization of polycrystalline silicon and silicon-germanium films
J. Appl. Phys. 83, 4472–4476 (1998)
https://doi.org/10.1063/1.367209
Impurity incorporation kinetics during modified-Lely growth of SiC
J. Appl. Phys. 83, 4487–4490 (1998)
https://doi.org/10.1063/1.367234
Spectroscopic determination of the structure of amorphous nitrogenated carbon films
J. Appl. Phys. 83, 4491–4500 (1998)
https://doi.org/10.1063/1.367211
Metal deposition into a porous silicon layer by immersion plating: Influence of halogen ions
J. Appl. Phys. 83, 4501–4506 (1998)
https://doi.org/10.1063/1.367212
Thermal stability of copper silicide passivation layers in copper-based multilevel interconnects
J. Appl. Phys. 83, 4507–4512 (1998)
https://doi.org/10.1063/1.367235
Numerical analysis of a thin microcrystalline layer in -Si:H solar cells
J. Appl. Phys. 83, 4518–4521 (1998)
https://doi.org/10.1063/1.367214
Optical characterization of GaAs/AlGaAs quantum well wires fabricated using arsenic implantation induced intermixing
J. Appl. Phys. 83, 4526–4530 (1998)
https://doi.org/10.1063/1.367236
COMMUNICATIONS
1.3 μm InGaAsP/InP capped mesa buried heterostructure laser with an undoped cladding layer in base epitaxial growth
J. Appl. Phys. 83, 4540–4541 (1998)
https://doi.org/10.1063/1.367316
Determination of valence band splitting parameters in GaN
J. Appl. Phys. 83, 4542–4544 (1998)
https://doi.org/10.1063/1.367217
Resonance splitting effect and wave-vector filtering effect in magnetic superlattices
J. Appl. Phys. 83, 4545–4547 (1998)
https://doi.org/10.1063/1.367218
Threshold dependence on pixel size and cell thickness in a multidomain twisted nematic liquid crystal display
J. Appl. Phys. 83, 4548–4550 (1998)
https://doi.org/10.1063/1.367219
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Decoding diffraction and spectroscopy data with machine learning: A tutorial
D. Vizoso, R. Dingreville