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GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)

Thermal expansion of scanning tunneling microscopy tips under laser illumination

S. Grafström; P. Schuller; J. Kowalski; R. Neumann

J. Appl. Phys. 83, 3453–3460 (1998) https://doi.org/10.1063/1.366556

Abstract

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The probe dynamics under shear force in near-field scanning optical microscopy

P. K. Wei; W. S. Fann

J. Appl. Phys. 83, 3461–3468 (1998) https://doi.org/10.1063/1.366557

Abstract

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CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

The directionality of quantum confinement on strain-induced quantum-wire lasers

S. T. Chou; D. E. Wohlert; K. Y. Cheng; K. C. Hsieh

J. Appl. Phys. 83, 3469–3472 (1998) https://doi.org/10.1063/1.366558

Abstract

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Photorefractive effect in doped ${Pb}_{5} {Ge}_{3} O_{11}$ and in $({Pb}_{1−x} {Ba}_{x})_{5} {Ge}_{3} O_{11}$

Xuefeng Yue; S. Mendricks; Yi Hu; H. Hesse; D. Kip

J. Appl. Phys. 83, 3473–3479 (1998) https://doi.org/10.1063/1.366628

Abstract

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Silicon-based interminiband infrared laser

Lionel Friedman; Richard A. Soref; Gregory Sun

J. Appl. Phys. 83, 3480–3485 (1998) https://doi.org/10.1063/1.366559

Abstract

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Parametric interactions in the organic salt $4-N,N$ -dimethylamino- $4^{'} {-N}^{'}$ - methyl-stilbazolium tosylate at telecommunication wavelengths

U. Meier; M. Bösch; Ch. Bosshard; F. Pan; P. Günter

J. Appl. Phys. 83, 3486–3489 (1998) https://doi.org/10.1063/1.366560

Abstract

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Fabrication of a polymer composite with periodic structure by the use of ultrasonic waves

Mitsunori Saito; Tetsuya Daian; Kiyohiko Hayashi; Shin-ya Izumida

J. Appl. Phys. 83, 3490–3494 (1998) https://doi.org/10.1063/1.366561

Abstract

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Application of a generalized methodology for quantitative thermal diffusivity depth profile reconstruction in manufactured inhomogeneous steel-based materials

Mahendra Munidasa; Frank Funak; Andreas Mandelis

J. Appl. Phys. 83, 3495–3498 (1998) https://doi.org/10.1063/1.366562

Abstract

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Thermal composition of DyF-, HoF-, and TmF-based gases

Leonid A. Kaledin; Robert T. Holbrook; Joseph A. Kunc

J. Appl. Phys. 83, 3499–3508 (1998) https://doi.org/10.1063/1.366563

Abstract

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Transport of plasmas produced by pulsed laser ablation of HgCdTe

B. Y. Man; X. T. Wang; A. H. Liu

J. Appl. Phys. 83, 3509–3513 (1998) https://doi.org/10.1063/1.366564

Abstract

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Microwave generation in a high voltage triggered pseudospark discharge experiment

K. Ramaswamy; W. W. Destler; J. Rodgers

J. Appl. Phys. 83, 3514–3520 (1998) https://doi.org/10.1063/1.366627

Abstract

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Comparison of a consistent theory of radio frequency sheaths with step models

J. Gierling; K.-U. Riemann

J. Appl. Phys. 83, 3521–3528 (1998) https://doi.org/10.1063/1.366565

Abstract

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CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

X-ray diffraction studies of the effects of N incorporation in amorphous ${CN}_{x}$ materials

J. K. Walters; M. Kühn; C. Spaeth; E. Dooryhee; R. J. Newport

J. Appl. Phys. 83, 3529–3534 (1998) https://doi.org/10.1063/1.366566

Abstract

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Two-dimensional nuclear magnetic resonance study of a hydrated porous medium: An application to white cement

J. Dolinšek; T. Apih; G. Lahajnar; R. Blinc; G. Papavassiliou; M. M. Pintar

J. Appl. Phys. 83, 3535–3540 (1998) https://doi.org/10.1063/1.366567

Abstract

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Thermal deposition and characterization of Se-Sn mixed oxide thin films for NO gas sensing applications

D. Manno; G. Micocci; A. Serra; A. Tepore

J. Appl. Phys. 83, 3541–3546 (1998) https://doi.org/10.1063/1.366568

Abstract

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Microfabrication of microtip on photocantilever for near-field scanning microscopy and investigation of effect of microtip shape on spatial resolution

Yuriko Tanaka; Kenji Fukuzawa; Hiroki Kuwano

J. Appl. Phys. 83, 3547–3551 (1998) https://doi.org/10.1063/1.366569

Abstract

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Diffraction anomalous near-edge structure in ordered GaInP

L. Alagna; T. Prosperi; S. Turchini; C. Ferrari; L. Francesio; P. Franzosi

J. Appl. Phys. 83, 3552–3555 (1998) https://doi.org/10.1063/1.366570

Abstract

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Excimer laser irradiation of ${Si}_{3} N_{4}$ films deposited on Si

Masato Ohmukai; Yasuo Takigawa; Kou Kurosawa

J. Appl. Phys. 83, 3556–3559 (1998) https://doi.org/10.1063/1.366571

Abstract

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Chemical etching of ion tracks in LiF crystals

C. Trautmann; K. Schwartz; O. Geiss

J. Appl. Phys. 83, 3560–3564 (1998) https://doi.org/10.1063/1.366572

Abstract

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Profile broadening of high dose germanium implants into (100) silicon at elevated temperatures due to channeling

A. Nejim; A. P. Knights; C. Jeynes; P. G. Coleman; C. J. Patel

J. Appl. Phys. 83, 3565–3573 (1998) https://doi.org/10.1063/1.366573

Abstract

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Fracture initiation at sharp notches in single crystal silicon

Wan Suwito; Martin L. Dunn; Shawn J. Cunningham

J. Appl. Phys. 83, 3574–3582 (1998) https://doi.org/10.1063/1.366574

Abstract

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Microcracks, spall and fracture in glass: A study using short pulsed laser shock waves

Xin-Zen Li; M. Nakano; Y. Yamauchi; K. Kishida; K. A. Tanaka

J. Appl. Phys. 83, 3583–3594 (1998) https://doi.org/10.1063/1.366575

Abstract

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Effect of “bamboo” grain boundaries on the maximum electromigration-induced stress in microelectronic interconnect lines

R. J. Gleixner; W. D. Nix

J. Appl. Phys. 83, 3595–3599 (1998) https://doi.org/10.1063/1.366576

Abstract

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Finite element analysis of the effects of geometry and microstructure on electromigration in confined metal lines

Yongkun Liu; C. L. Cox; R. J. Diefendorf

J. Appl. Phys. 83, 3600–3608 (1998) https://doi.org/10.1063/1.366577

Abstract

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Photoluminescence study of defects in ${Si}^{+}$ ion implanted thermal ${SiO}_{2}$ films

Jia-Yu Zhang; Xi-Mao Bao; Neng-Sheng Li; Hai-Zhi Song

J. Appl. Phys. 83, 3609–3613 (1998) https://doi.org/10.1063/1.366578

Abstract

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Oxidation and roughening of silicon during annealing in a rapid thermal processing chamber

B. Mohadjeri; M. R. Baklanov; E. Kondoh; K. Maex

J. Appl. Phys. 83, 3614–3619 (1998) https://doi.org/10.1063/1.366629

Abstract

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Step structure and ordering in GaInP

S. H. Lee; G. B. Stringfellow

J. Appl. Phys. 83, 3620–3625 (1998) https://doi.org/10.1063/1.366580

Abstract

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Stacking effects on dielectric properties of sol-gel derived ${Pb(Zr}_{0.53} {Ti}_{0.47} {)O}_{3} {/PbTiO}_{3}$ thin films

Ki Hyun Yoon; Ji Hwan Shin; Jeong Hwan Park; Dong Heon Kang

J. Appl. Phys. 83, 3626–3629 (1998) https://doi.org/10.1063/1.366581

Abstract

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X-ray interference effect as a tool for the structural investigation of GaInAs/InP multiple quantum wells

T. Marschner; J. Brübach; C. A. Verschuren; M. R. Leys; J. H. Wolter

J. Appl. Phys. 83, 3630–3637 (1998) https://doi.org/10.1063/1.366582

Abstract

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Scanning tunneling microscopy study on the surface and interface of ${Si(111)/SiO}_{2}$ structures

Ken Fujita; Heiji Watanabe; Masakazu Ichikawa

J. Appl. Phys. 83, 3638–3642 (1998) https://doi.org/10.1063/1.366579

Abstract

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CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

Backscattering of slow positrons from semi-infinite aluminum

N. Bouarissa; A. B. Walker; H. Aourag

J. Appl. Phys. 83, 3643–3648 (1998) https://doi.org/10.1063/1.366583

Abstract

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Observation of near-surface electrically active defects in $n$ -type $6 H - SiC$

J. P. Doyle; A. Schöner; N. Nordell; A. Galeckas; H. Bleichner; M. K. Linnarsson,; J. Linnros; B. G. Svensson

J. Appl. Phys. 83, 3649–3651 (1998) https://doi.org/10.1063/1.367147

Abstract

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Reduction of photoscission of σ bonds in polysilanes by fullerene doping

Shinsuke Ninomiya; Yoji Ashihara; Yoshikazu Nakayama; Kunio Oka; Robert West

J. Appl. Phys. 83, 3652–3655 (1998) https://doi.org/10.1063/1.366584

Abstract

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Scattering of electrons at threading dislocations in GaN

Nils G. Weimann; Lester F. Eastman; Dharanipal Doppalapudi; Hock M. Ng; Theodore D. Moustakas

J. Appl. Phys. 83, 3656–3659 (1998) https://doi.org/10.1063/1.366585

Abstract

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$1/f$ noise investigations in small channel length amorphous silicon thin film transistors

J. Rhayem; M. Valenza; D. Rigaud; N. Szydlo; H. Lebrun

J. Appl. Phys. 83, 3660–3667 (1998) https://doi.org/10.1063/1.366586

Abstract

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Improvement in buried silicon nitride silicon-on-insulator structures by fluorine-ion implantation

C. M. S. Rauthan; G. S. Virdi; B. C. Pathak; A. Karthigeyan

J. Appl. Phys. 83, 3668–3677 (1998) https://doi.org/10.1063/1.366587

Abstract

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Band gap energies of bulk, thin-film, and epitaxial layers of ${CuInSe}_{2}$ and ${CuGaSe}_{2}$

S. Chichibu; T. Mizutani; K. Murakami; T. Shioda; T. Kurafuji; H. Nakanishi; S. Niki; P. J. Fons; A. Yamada

J. Appl. Phys. 83, 3678–3689 (1998) https://doi.org/10.1063/1.366588

Abstract

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Analysis of Fermi level pinning and surface state distribution in InAlAs heterostructures

W. Y. Chou; G. S. Chang; W. C. Hwang; J. S. Hwang

J. Appl. Phys. 83, 3690–3695 (1998) https://doi.org/10.1063/1.366593

Abstract

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Size and temperature dependence of electrical resistance and thermoelectric power of ${Bi}_{2} {Te}_{2} {Se}_{1}$ thin films

V. Damodara Das; S. Selvaraj

J. Appl. Phys. 83, 3696–3702 (1998) https://doi.org/10.1063/1.366594

Abstract

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A comparative study on the electrical conduction mechanisms of $({Ba}_{0.5} {Sr}_{0.5} {)TiO}_{3}$ thin films on Pt and ${IrO}_{2}$ electrodes

Cheol Seong Hwang; Byoung Taek Lee; Chang Seok Kang; Jin Won Kim; Ki Hoon Lee; Hag-Ju Cho; Hideki Horii; Wan Don Kim; Sang In Lee; Young Bum Roh; Moon Yong Lee

J. Appl. Phys. 83, 3703–3713 (1998) https://doi.org/10.1063/1.366595

Abstract

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Observation of a geometrical barrier in ${YBa}_{2} {Cu}_{3} O_{6.95}$ single crystals

M. W. Gardner; S. A. Govorkov; R. Liang; D. A. Bonn; J. F. Carolan; W. N. Hardy

J. Appl. Phys. 83, 3714–3719 (1998) https://doi.org/10.1063/1.366596

Abstract

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Spin valves exchange biased by Co/Ru/Co synthetic antiferromagnets

J. L. Leal; M. H. Kryder

J. Appl. Phys. 83, 3720–3723 (1998) https://doi.org/10.1063/1.366597

Abstract

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Microstructural modification in Co/Cu giant-magnetoresistance multilayers

C. Christides; S. Stavroyiannis; N. Boukos; A. Travlos; D. Niarchos

J. Appl. Phys. 83, 3724–3730 (1998) https://doi.org/10.1063/1.366598

Abstract

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Alternating current susceptibility study of a two-phase nanocomposite ${Fe}_{88} {Nd}_{6} B_{6}$ alloy in the temperature range 77–990 K

J. S. Fang; M. S. Leu; T. S. Chin

J. Appl. Phys. 83, 3731–3737 (1998) https://doi.org/10.1063/1.366599

Abstract

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Ferromagnetic resonance modes in coupled layers with cubic magnetocrystalline anisotropy

A. Layadi

J. Appl. Phys. 83, 3738–3743 (1998) https://doi.org/10.1063/1.366600

Abstract

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Theory of a high frequency magnetic tunable filter and phase shifter

R. J. Astalos; R. E. Camley

J. Appl. Phys. 83, 3744–3749 (1998) https://doi.org/10.1063/1.366601

Abstract

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Spin reorientation transition due to thickness ratio variation in ${EuBi}_{2} {Fe}_{5} O_{12} {/Y}_{3} {Fe}_{5} O_{12}$ multilayer films—ferrimagnetic resonance studies

S. E. Lofland; S. M. Bhagat; V. V. Srinivasu; R. Ramesh; B. M. Simion; G. Thomas

J. Appl. Phys. 83, 3750–3753 (1998) https://doi.org/10.1063/1.366602

Abstract

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CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

Shear response of lead zirconate titanate piezoceramics

V. Mueller; Q. M. Zhang

J. Appl. Phys. 83, 3754–3761 (1998) https://doi.org/10.1063/1.366603

Abstract

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Translational vibrations of domain structure in ferroelectrics

A. S. Sidorkin

J. Appl. Phys. 83, 3762–3768 (1998) https://doi.org/10.1063/1.366604

Abstract

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Effect of reflectivity at the interface of oxide layer on transverse mode control in oxide confined vertical-cavity surface-emitting lasers

Yong-Zhen Huang

J. Appl. Phys. 83, 3769–3772 (1998) https://doi.org/10.1063/1.366605

Abstract

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Influence of misfit dislocation interactions on photoluminescence spectra of SiGe on patterned Si

G. P. Watson; J. L. Benton; Y. H. Xie; E. A. Fitzgerald

J. Appl. Phys. 83, 3773–3776 (1998) https://doi.org/10.1063/1.366606

Abstract

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Microphotoluminescence characterization of cleaved edge overgrowth T-shaped ${In}_{x} {Ga}_{1−x} As$ quantum wires

Masahiro Yoshita; Hidefumi Akiyama; Takao Someya; Hiroyuki Sakaki

J. Appl. Phys. 83, 3777–3783 (1998) https://doi.org/10.1063/1.367148

Abstract

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Above-threshold longitudinal profiling of carrier nonpinning and spatial modulation in asymmetric cavity lasers

A. J. Bennett; R. D. Clayton; J. M. Xu

J. Appl. Phys. 83, 3784–3788 (1998) https://doi.org/10.1063/1.366607

Abstract

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Modeling the contribution of quantum confinement to luminescence from silicon nanoclusters

P. F. Trwoga; A. J. Kenyon; C. W. Pitt

J. Appl. Phys. 83, 3789–3794 (1998) https://doi.org/10.1063/1.366608

Abstract

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Characterization of erasable inorganic photochromic media for optical disk data storage

Xu Guang Huang; Michael R. Wang; Yuen Tsui; Chuck Wu

J. Appl. Phys. 83, 3795–3799 (1998) https://doi.org/10.1063/1.366609

Abstract

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Structural properties of GaN layers on Si(001) grown by plasma-assisted molecular beam epitaxy

B. Yang; A. Trampert; O. Brandt; B. Jenichen; K. H. Ploog

J. Appl. Phys. 83, 3800–3806 (1998) https://doi.org/10.1063/1.367144

Abstract

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Photoacoustic determination of recombination parameters in CdTe/glass system

J. Bernal-Alvarado; M. Vargas; J. J. Alvarado-Gil; I. Delgadillo; A. Cruz-Orea; H. Vargas; M. Tufiño-Velázquez; M. L. Albor-Aguilera; M. A. González-Trujillo

J. Appl. Phys. 83, 3807–3810 (1998) https://doi.org/10.1063/1.366610

Abstract

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Photostimulated luminescence of AgI clusters in zeolite-Y

Wei Chen; Zhanguo Wang; Zhaojun Lin; Lanying Lin; Keming Fang; Yan Xu; Mianzeng Su; Jianhua Lin

J. Appl. Phys. 83, 3811–3815 (1998) https://doi.org/10.1063/1.366611

Abstract

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Single crystallites in “planar polycrystalline” oligothiophene films: Determination of orientation and thickness by polarization microscopy

J. Vrijmoeth; R. W. Stok; R. Veldman; W. A. Schoonveld; T. M. Klapwijk

J. Appl. Phys. 83, 3816–3824 (1998) https://doi.org/10.1063/1.367145

Abstract

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Defects in YAG:Yb crystals

Hongbing Yin; Peizhen Deng; Fuxi Gan

J. Appl. Phys. 83, 3825–3828 (1998) https://doi.org/10.1063/1.366612

Abstract

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CROSS-DISCIPLINARY PHYSICS (PACS 81-98)

Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition

J. Cao; D. Pavlidis; Y. Park; J. Singh; A. Eisenbach

J. Appl. Phys. 83, 3829–3834 (1998) https://doi.org/10.1063/1.366613

Abstract

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Texture control of ${PbTiO}_{3}$ and ${Pb(Zr,Ti)O}_{3}$ thin films with ${TiO}_{2}$ seeding

P. Muralt; T. Maeder; L. Sagalowicz; S. Hiboux; S. Scalese; D. Naumovic; R. G. Agostino; N. Xanthopoulos; H. J. Mathieu; L. Patthey; E. L. Bullock

J. Appl. Phys. 83, 3835–3841 (1998) https://doi.org/10.1063/1.366614

Abstract

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Yttrium oxide films prepared by pulsed laser deposition

Shaoqiang Zhang; Rongfu Xiao

J. Appl. Phys. 83, 3842–3848 (1998) https://doi.org/10.1063/1.366615

Abstract

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${}^{18}O_{2}$ isotope labeling studies of stress effect on oxidation kinetics

Keitaro Imai; Kikuo Yamabe

J. Appl. Phys. 83, 3849–3855 (1998) https://doi.org/10.1063/1.366616

Abstract

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Numerical modeling of materials processing applications of a pulsed cold cathode electron gun

J. I. Etcheverry; O. E. Martı́nez; N. Mingolo

J. Appl. Phys. 83, 3856–3864 (1998) https://doi.org/10.1063/1.366617

Abstract

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Stress evaluation of radio-frequency-biased plasma-enhanced chemical vapor deposited silicon nitride films

Masahiko Maeda; Koichi Ikeda

J. Appl. Phys. 83, 3865–3870 (1998) https://doi.org/10.1063/1.366618

Abstract

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Oxidation characteristics and magnetic properties of iron ultrafine particles

X. G. Li; A. Chiba; S. Takahashi; M. Sato

J. Appl. Phys. 83, 3871–3875 (1998) https://doi.org/10.1063/1.366619

Abstract

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Cold neutron incoherent scattering for hydrogen detection in industrial materials

V. V. Kvardakov; H. H. Chen-Mayer; D. F. R. Mildner; V. A. Somenkov

J. Appl. Phys. 83, 3876–3879 (1998) https://doi.org/10.1063/1.366620

Abstract

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Influence of mixed particle size on electrorheological response

C. W. Wu; H. Conrad

J. Appl. Phys. 83, 3880–3884 (1998) https://doi.org/10.1063/1.366621

Abstract

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Transient input of an electromagnetic wave into an open waveguide coated with nonstationary plasma film

M. I. Bakunov; A. V. Maslov

J. Appl. Phys. 83, 3885–3891 (1998) https://doi.org/10.1063/1.366622

Abstract

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Low-noise heterodyne mixing with NbN microbolometers at 800 GHz

T. Lehnert; H. Rothermel; K. H. Gundlach

J. Appl. Phys. 83, 3892–3897 (1998) https://doi.org/10.1063/1.366623

Abstract

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Tunneling induced charge generation in ${SiO}_{2}$ thin films

Chun Chen; William L. Wilson; Michael Smayling

J. Appl. Phys. 83, 3898–3905 (1998) https://doi.org/10.1063/1.366624

Abstract

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Transient behavior of $a- Si(C):H$ bulk barrier color detectors

Q. Zhu; J. Sterzel; B. Schneider; S. Coors; M. Böhm

J. Appl. Phys. 83, 3906–3910 (1998) https://doi.org/10.1063/1.367146

Abstract

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COMMUNICATIONS

Synthesis of oriented thin films of ferroelectric ${SbNbO}_{4}$ on Si by pulsed laser ablation

Soma Chattopadhyay; Pushan Ayyub; Manu Multani; R. Pinto

J. Appl. Phys. 83, 3911–3913 (1998) https://doi.org/10.1063/1.366625

Abstract

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Nanoelectronics using conductance quantization

Ronald M. Cosby; Dustin R. Humm; Yong S. Joe

J. Appl. Phys. 83, 3914–3916 (1998) https://doi.org/10.1063/1.366626

Abstract

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Determination of the structure of amorphous nitrogenated carbon films by combined Raman and x-ray photoemission spectroscopy

S. Bhattacharyya; J. Hong; G. Turban

J. Appl. Phys. 83, 3917–3919 (1998) https://doi.org/10.1063/1.367312

Abstract

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Up-conversion characteristics of ${Er}^{3+}$ in transparent oxyfluoride glass–ceramics

Masahide Takahashi; Manabu Izuki; Ryoji Kanno; Yoji Kawamoto

J. Appl. Phys. 83, 3920–3922 (1998) https://doi.org/10.1063/1.367140

Abstract

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Photoconductive generation mechanism and gain in internal photoemission infrared detectors

W. Z. Shen; A. G. U. Perera

J. Appl. Phys. 83, 3923–3925 (1998) https://doi.org/10.1063/1.367141

Abstract

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Monte Carlo simulation of an amorphous hydrogenated silicon film deposition from a gas jet activated by an electron beam

A. V. Vasenkov; R. G. Sharafutdinov; A. V. Skrinnikov

J. Appl. Phys. 83, 3926–3928 (1998) https://doi.org/10.1063/1.367142

Abstract

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Red to green rainbow photoluminescence from unoxidized silicon nanocrystallites

Zain Yamani; Sahel Ashhab; Ammar Nayfeh; W. Howard Thompson; Munir Nayfeh

J. Appl. Phys. 83, 3929–3931 (1998) https://doi.org/10.1063/1.367313

Abstract

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Matrix method for the x-ray rocking curve simulation

In Kim; Sang-Wan Ryu; Byung-Doo Choe; Hee-Dae Kim; Weon Guk Jeong

J. Appl. Phys. 83, 3932–3934 (1998) https://doi.org/10.1063/1.367143

Abstract

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Comment on “Amorphization and defect recombination in ion implanted silicon carbide” [J. Appl. Phys. 81, 7181 (1997)]

V. Heera

J. Appl. Phys. 83, 3935–3936 (1998) https://doi.org/10.1063/1.367314

Abstract

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Reply to “Comment on ‘Amorphization and defect recombination in ion implanted silicon carbide’ ” [J. Appl. Phys. 83, 3935 (1998)]

M. G. Grimaldi; L. Calcagno

J. Appl. Phys. 83, 3937 (1998) https://doi.org/10.1063/1.367315

Abstract

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ERRATA

Erratum: “New neutron magnetic low index leaky waveguide coupler” [J. Appl. Phys. 81, 4281 (1997)]

S. P. Pogossian; J. Ben-Youssef; H. Le Gall; J. M. Desvignes; A. Menelle

J. Appl. Phys. 83, 3938 (1998) https://doi.org/10.1063/1.366592

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Issues

GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)

CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

CROSS-DISCIPLINARY PHYSICS (PACS 81-98)

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