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Issues
15 February 1998
ISSN 0021-8979
EISSN 1089-7550
In this Issue
APPLIED PHYSICS REVIEWS
GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)
The role of internal dissipation and process average temperature in chiller performance and diagnostics
J. Appl. Phys. 83, 1831–1836 (1998)
https://doi.org/10.1063/1.366983
Nanoscale oxidation of GaAs-based semiconductors using atomic force microscope
J. Appl. Phys. 83, 1844–1847 (1998)
https://doi.org/10.1063/1.366907
CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)
Optical characterization of the in-plane switching effect utilizing multidomain structures
J. Appl. Phys. 83, 1854–1862 (1998)
https://doi.org/10.1063/1.366909
Optimization of double drive pulse pumping in Ne-like Ge x-ray lasers
J. Appl. Phys. 83, 1863–1868 (1998)
https://doi.org/10.1063/1.366910
Ensemble Monte Carlo analysis of self-heating effects in graded heterojunction bipolar transistors
J. Appl. Phys. 83, 1869–1877 (1998)
https://doi.org/10.1063/1.366911
Real-time depth profile reconstruction of the thermal conductivity of inhomogeneous solids
J. Appl. Phys. 83, 1878–1883 (1998)
https://doi.org/10.1063/1.366912
Transient response of the radio frequency inductively coupled plasma to a sudden change in power
J. Appl. Phys. 83, 1898–1908 (1998)
https://doi.org/10.1063/1.366914
A study of electron energy distributions in an inductively coupled plasma by laser Thomson scattering
J. Appl. Phys. 83, 1909–1916 (1998)
https://doi.org/10.1063/1.366915
CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)
In situ measurement of radiation induced conductivity in oxide insulators during neutron irradiation
J. Appl. Phys. 83, 1924–1930 (1998)
https://doi.org/10.1063/1.366917
Effects of cell structure on the reflection of cholesteric liquid crystal displays
J. Appl. Phys. 83, 1938–1944 (1998)
https://doi.org/10.1063/1.366918
Transmission electron microscopy and cathodoluminescence studies of extended defects in electron-beam-pumped blue-green lasers
Jean-Marc Bonard; Jean-Daniel Ganière; Lia Vanzetti; Jens J. Paggel; Lucia Sorba; Alfonso Franciosi; Denis Hervé; Engin Molva
J. Appl. Phys. 83, 1945–1952 (1998)
https://doi.org/10.1063/1.366919
Surface modification of -GaAs by 50 MeV silicon ions
Shiva S. Hullavarad; T. A. Railkar; S. V. Bhoraskar; P. Madukumar; A. S. Gokarna; V. N. Bhoraskar; S. Badrinarayanan; N. R. Pawaskar
J. Appl. Phys. 83, 1962–1966 (1998)
https://doi.org/10.1063/1.366922
Wide supercooled liquid region and soft magnetic properties of (or amorphous alloys
J. Appl. Phys. 83, 1967–1974 (1998)
https://doi.org/10.1063/1.366923
Thermal expansion of and , substrate materials for superconducting thin-film device applications
J. Appl. Phys. 83, 1979–1982 (1998)
https://doi.org/10.1063/1.366925
Nitrogenation of the magnetic compound
J. Appl. Phys. 83, 1983–1987 (1998)
https://doi.org/10.1063/1.366926
Whiskers in indium tin oxide films obtained by electron beam evaporation
J. Appl. Phys. 83, 1995–2002 (1998)
https://doi.org/10.1063/1.366928
Growth of aluminum nitride on (111) silicon: Microstructure and interface structure
J. Appl. Phys. 83, 2003–2009 (1998)
https://doi.org/10.1063/1.366929
X-ray diffraction measurement of segregation-induced interface broadening in superlattices
J. Appl. Phys. 83, 2010–2013 (1998)
https://doi.org/10.1063/1.366930
Dopants effects on the interfacial reaction between Co and strained layers
J. Appl. Phys. 83, 2019–2024 (1998)
https://doi.org/10.1063/1.366932
CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)
Temperature dependence of galvanomagnetic properties for Gd doped and undoped -type GaSe
J. Appl. Phys. 83, 2030–2034 (1998)
https://doi.org/10.1063/1.366934
Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy
J. Appl. Phys. 83, 2035–2040 (1998)
https://doi.org/10.1063/1.366935
The initiation of high current density switching in electrically conductive polymer composite materials
J. Appl. Phys. 83, 2046–2051 (1998)
https://doi.org/10.1063/1.366937
Effects of gallium doping on the properties of amorphous-SiC:H films prepared by magnetron cosputtering
J. Appl. Phys. 83, 2067–2071 (1998)
https://doi.org/10.1063/1.366939
Electron affinity and Schottky barrier height of metal–diamond (100), (111), and (110) interfaces
J. Appl. Phys. 83, 2072–2082 (1998)
https://doi.org/10.1063/1.366940
Influence of temperature and interface charge on the grain-boundary conductivity in acceptor-doped ceramics
J. Appl. Phys. 83, 2083–2092 (1998)
https://doi.org/10.1063/1.366941
Studies on interface states at ultrathin interfaces by means of x-ray photoelectron spectroscopy under biases and their passivation by cyanide treatment
Hikaru Kobayashi; Akira Asano; Shinya Asada; Tomohiro Kubota; Yoshiyuki Yamashita; Kenji Yoneda; Yoshihiro Todokoro
J. Appl. Phys. 83, 2098–2103 (1998)
https://doi.org/10.1063/1.366943
Optical and electrical properties of undoped ZnO films grown by spray pyrolysis of zinc nitrate solution
J. Appl. Phys. 83, 2104–2111 (1998)
https://doi.org/10.1063/1.366944
Characterization of silicon surfaces in HF solution using microwave reflectivity
J. Appl. Phys. 83, 2112–2120 (1998)
https://doi.org/10.1063/1.366945
Electronic transport in tin-doped indium oxide thin films prepared by sol-gel technique
J. Appl. Phys. 83, 2139–2141 (1998)
https://doi.org/10.1063/1.366949
Low-frequency noise and performance of GaN junction photodetectors
J. Appl. Phys. 83, 2142–2146 (1998)
https://doi.org/10.1063/1.366950
Magnetic properties enhancement of -type nanocomposites by Co substitution
J. Appl. Phys. 83, 2147–2151 (1998)
https://doi.org/10.1063/1.366951
Influence of the substrate on growth and magnetoresistance of thin films deposited by magnetron sputtering
J. Appl. Phys. 83, 2152–2157 (1998)
https://doi.org/10.1063/1.366952
Anomalies of ferromagnetic resonance in garnets and their relation to the magnetization process
J. Appl. Phys. 83, 2158–2164 (1998)
https://doi.org/10.1063/1.366953
CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)
Evaluation of imprint in fully integrated ferroelectric capacitors
S. Sadashivan; S. Aggarwal; T. K. Song; R. Ramesh; J. T. Evans, Jr.; B. A. Tuttle; W. L. Warren; D. Dimos
J. Appl. Phys. 83, 2165–2171 (1998)
https://doi.org/10.1063/1.366954
Theoretical stability of the polarization in insulating ferroelectric/semiconductor structures
J. Appl. Phys. 83, 2179–2193 (1998)
https://doi.org/10.1063/1.367994
Microstructural characterization of sol–gel lead–zirconate–titanate thin films
J. Appl. Phys. 83, 2202–2208 (1998)
https://doi.org/10.1063/1.366957
Photoluminescence of ion doped phosphate ceramics
J. Appl. Phys. 83, 2222–2227 (1998)
https://doi.org/10.1063/1.366960
Optical properties of Si clusters and Si nanocrystallites in high-temperature annealed films
J. Appl. Phys. 83, 2228–2234 (1998)
https://doi.org/10.1063/1.366961
Unified model for the luminescence and transport data in self-supporting porous silicon
J. Appl. Phys. 83, 2235–2240 (1998)
https://doi.org/10.1063/1.366962
Optical properties of at the crossover from a direct-gap to an indirect-gap semiconductor
U. Dörr; W. Schwarz; A. Wörner; R. Westphäling; A. Dinger; H. Kalt; D. J. Mowbray; M. Hopkinson; W. Langbein
J. Appl. Phys. 83, 2241–2249 (1998)
https://doi.org/10.1063/1.366963
Dopant-sensitive luminescence spectroscopy of yttrium aluminum garnet by high-current electron pulses
J. Appl. Phys. 83, 2250–2255 (1998)
https://doi.org/10.1063/1.366964
Optical spectroscopy of and co-doped fluoroindate glasses
J. Appl. Phys. 83, 2256–2260 (1998)
https://doi.org/10.1063/1.366965
Low temperature photoluminescence characteristics of Zn-doped InP grown by metalorganic chemical vapor deposition
J. Appl. Phys. 83, 2261–2265 (1998)
https://doi.org/10.1063/1.366966
Magnesium acceptor levels in GaN studied by photoluminescence
A. Kasi Viswanath; Eun-joo Shin; Joo In Lee; Sungkyu Yu; Dongho Kim; Baeyong Kim; Yoonho Choi; Chang-Hee Hong
J. Appl. Phys. 83, 2272–2275 (1998)
https://doi.org/10.1063/1.366985
CROSS-DISCIPLINARY PHYSICS (PACS 81-98)
Surface dopant concentration monitoring using noncontact surface charge profiling
J. Appl. Phys. 83, 2297–2300 (1998)
https://doi.org/10.1063/1.366972
Size selected silicon particles in sol-gel glass by centrifugal processing
J. Appl. Phys. 83, 2301–2307 (1998)
https://doi.org/10.1063/1.366973
Densification of radio frequency sputtered silicon oxide films by rapid thermal annealing
J. Appl. Phys. 83, 2308–2314 (1998)
https://doi.org/10.1063/1.366974
Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices
J. Appl. Phys. 83, 2327–2337 (1998)
https://doi.org/10.1063/1.366976
COMMUNICATIONS
Concentration of neutral oxygen vacancies in buried oxide formed by implantation of oxygen
J. Appl. Phys. 83, 2357–2359 (1998)
https://doi.org/10.1063/1.366978
Observation of quantized conductance in split-gate point contacts using Cr/Au -InP Schottky barriers
J. Appl. Phys. 83, 2360–2362 (1998)
https://doi.org/10.1063/1.366979
Ion-induced room temperature synthesis of low resistive nickel germanide phase
J. Appl. Phys. 83, 2363–2365 (1998)
https://doi.org/10.1063/1.366980
Deep levels in heavily Zn-doped InP layers implanted with Ti and Ti/P
J. Appl. Phys. 83, 2366–2368 (1998)
https://doi.org/10.1063/1.366981
Physical properties of osmium doped tin oxide thin films
J. Appl. Phys. 83, 2369–2371 (1998)
https://doi.org/10.1063/1.366982
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.