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Observation of the development of hysteretic behavior using a scanning tunneling microscope

Roberta Zasadzinski; Yannick De Wilde; George W. Crabtree

J. Appl. Phys. 82, 3175–3181 (1997) https://doi.org/10.1063/1.365646

Abstract

View articletitled, Observation of the development of hysteretic behavior using a scanning tunneling microscope

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Measurement of the stray field emanating from magnetic force microscope tips by Hall effect microsensors

A. Thiaville; L. Belliard; D. Majer; E. Zeldov; J. Miltat

J. Appl. Phys. 82, 3182–3191 (1997) https://doi.org/10.1063/1.365623

Abstract

View articletitled, Measurement of the stray field emanating from magnetic force microscope tips by Hall effect microsensors

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Artificial molecule realization of a magnetic wall

Richard W. Ziolkowski; Fabrice Auzanneau

J. Appl. Phys. 82, 3192–3194 (1997) https://doi.org/10.1063/1.365624

Abstract

View articletitled, Artificial molecule realization of a magnetic wall

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Passive artificial molecule realizations of dielectric materials

Richard W. Ziolkowski; Fabrice Auzanneau

J. Appl. Phys. 82, 3195–3198 (1997) https://doi.org/10.1063/1.365625

Abstract

View articletitled, Passive artificial molecule realizations of dielectric materials

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Laser diode cavity ring-down spectroscopy using acousto-optic modulator stabilization

B. A. Paldus; J. S. Harris, Jr.; J. Martin; J. Xie; R. N. Zare

J. Appl. Phys. 82, 3199–3204 (1997) https://doi.org/10.1063/1.365688

Abstract

View articletitled, Laser diode cavity ring-down spectroscopy using acousto-optic modulator stabilization

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Channel optical waveguides formed by deuterium passivation in GaAs and InP

Mukesh Kumar; Joseph T. Boyd; Howard E. Jackson; John M. Zavada; Howard A. Jenkinson; Robert G. Wilson; B. Theys; J. Chevallier

J. Appl. Phys. 82, 3205–3213 (1997) https://doi.org/10.1063/1.365626

Abstract

View articletitled, Channel optical waveguides formed by deuterium passivation in GaAs and InP

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Structure of the optical phase change memory alloy, Ag–V–In–Sb–Te, determined by optical spectroscopy and electron diffraction

J. Tominaga; T. Kikukawa; M. Takahashi; R. T. Phillips

J. Appl. Phys. 82, 3214–3218 (1997) https://doi.org/10.1063/1.365627

Abstract

View articletitled, Structure of the optical phase change memory alloy, Ag–V–In–Sb–Te, determined by optical spectroscopy and electron diffraction

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Lateral waves in magnetoelastic media: Analysis of magnetic field

O. Gourakishwar Singh

J. Appl. Phys. 82, 3219–3222 (1997) https://doi.org/10.1063/1.365628

Abstract

View articletitled, Lateral waves in magnetoelastic media: Analysis of magnetic field

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Intense ion beam optimization and characterization with infrared imaging

H. A. Davis; R. R. Bartsch; J. C. Olson; D. J. Rej; W. J. Waganaar

J. Appl. Phys. 82, 3223–3231 (1997) https://doi.org/10.1063/1.365629

Abstract

View articletitled, Intense ion beam optimization and characterization with infrared imaging

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Vacancy production by 3 MeV electron irradiation in $6H- SiC$ studied by positron lifetime spectroscopy

Atsuo Kawasuso; Hisayoshi Itoh; Takeshi Ohshima; Koji Abe; Sohei Okada

J. Appl. Phys. 82, 3232–3238 (1997) https://doi.org/10.1063/1.365630

Abstract

View articletitled, Vacancy production by 3 MeV electron irradiation in <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">6H-</mtext><mi mathvariant="normal" xmlns="">SiC</mi></math> studied by positron lifetime spectroscopy

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Investigation of carrier removal in electron irradiated silicon diodes

S. J. Taylor; M. Yamaguchi; S. Matsuda; T. Hisamatsu; O. Kawasaki

J. Appl. Phys. 82, 3239–3249 (1997) https://doi.org/10.1063/1.365631

Abstract

View articletitled, Investigation of carrier removal in electron irradiated silicon diodes

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Characterization of metallic impurities in Si using a recombination-lifetime correlation method

Manabu Itsumi; Yoshiyuki Sato; Kazuo Imai; Norikuni Yabumoto

J. Appl. Phys. 82, 3250–3255 (1997) https://doi.org/10.1063/1.365632

Abstract

View articletitled, Characterization of metallic impurities in Si using a recombination-lifetime correlation method

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The diamond ${}^{13}C /^{12} C$ isotope Raman pressure sensor system for high-temperature/pressure diamond-anvil cells with reactive samples

David Schiferl; Malcolm Nicol; Joseph M. Zaug; S. K. Sharma; T. F. Cooney; S.-Y. Wang; Thomas R. Anthony; James F. Fleischer

J. Appl. Phys. 82, 3256–3265 (1997) https://doi.org/10.1063/1.366268

Abstract

View articletitled, The diamond <math xmlns="http://www.w3.org/1998/Math/MathML"><mmultiscripts xmlns=""><mi mathvariant="normal">C</mi><mtext></mtext><mtext></mtext><mprescripts></mprescripts><mtext></mtext><mn>13</mn></mmultiscripts><msup xmlns=""><mi mathvariant="normal">/</mi><mrow><mi mathvariant="normal">12</mi></mrow></msup><mi mathvariant="normal" xmlns="">C</mi></math> isotope Raman pressure sensor system for high-temperature/pressure diamond-anvil cells with reactive samples

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Assessment of thin-film hardness through elastic/plastic stress analysis in a microindentation test

Jeong-Hoon Ahn; Dongil Kwon

J. Appl. Phys. 82, 3266–3274 (1997) https://doi.org/10.1063/1.365633

Abstract

View articletitled, Assessment of thin-film hardness through elastic/plastic stress analysis in a microindentation test

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Interaction of coherent collinear acoustic waves in a liquid/solid system

J.-Y. Duquesne; D. A. Parshin

J. Appl. Phys. 82, 3275–3280 (1997) https://doi.org/10.1063/1.365634

Abstract

View articletitled, Interaction of coherent collinear acoustic waves in a liquid/solid system

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Kinetics of thin-film reactions of $Cu/ a -Ge$ bilayers

Z. Wang; G. Ramanath; L. H. Allen; A. Rockett; J. P. Doyle; B. G. Svensson

J. Appl. Phys. 82, 3281–3286 (1997) https://doi.org/10.1063/1.365635

Abstract

View articletitled, Kinetics of thin-film reactions of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Cu/</mi><mi xmlns="">a</mi><mi mathvariant="normal" xmlns="">-Ge</mi></math> bilayers

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Incorporation and stability of carbon during low-temperature epitaxial growth of ${Ge}_{1−x} C_{x}$ $(x<0.1)$ alloys on Si(100): Microstructural and Raman studies

B.-K. Yang; M. Krishnamurthy; W. H. Weber

J. Appl. Phys. 82, 3287–3296 (1997) https://doi.org/10.1063/1.365636

Abstract

View articletitled, Incorporation and stability of carbon during low-temperature epitaxial growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi>x</mi></mrow></msub></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(x<0.1)</mtext></math> alloys on Si(100): Microstructural and Raman studies

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Observation of non-trigonal lattice distortion in pseudomorphic InGaAs/GaAs superlattices grown on misoriented (111)B GaAs

A. Sanz-Hervás; M. Aguilar; J. L. Sánchez-Rojas; A. Sacedón; E. Calleja; E. Muñoz; C. Villar; E. J. Abril; M. López

J. Appl. Phys. 82, 3297–3305 (1997) https://doi.org/10.1063/1.365637

Abstract

View articletitled, Observation of non-trigonal lattice distortion in pseudomorphic InGaAs/GaAs superlattices grown on misoriented (111)B GaAs

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Determination of defect density in ZnCdMgSe layers grown on InP using a chemical etch

L. Zeng; B. X. Yang; B. Shewareged; M. C. Tamargo; J. Z. Wan; Fred H. Pollak; E. Snoeks; L. Zhao

J. Appl. Phys. 82, 3306–3309 (1997) https://doi.org/10.1063/1.365638

Abstract

View articletitled, Determination of defect density in ZnCdMgSe layers grown on InP using a chemical etch

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Effect of substrate materials on the electron field emission characteristics of chemical vapor deposited diamond films

Jau-Sung Lee; Kuo-Shung Liu; I-Nan Lin

J. Appl. Phys. 82, 3310–3313 (1997) https://doi.org/10.1063/1.365639

Abstract

View articletitled, Effect of substrate materials on the electron field emission characteristics of chemical vapor deposited diamond films

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Characterization of the temperature dependent phase transition of evaporated Ti films on diamond: Phase identification using maximum entropy data analysis

S. Miller; R. Fischer; H. Plank; J. Roth; V. Dose

J. Appl. Phys. 82, 3314–3320 (1997) https://doi.org/10.1063/1.365640

Abstract

View articletitled, Characterization of the temperature dependent phase transition of evaporated Ti films on diamond: Phase identification using maximum entropy data analysis

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Formation of titanium nitride by annealing Ag/Ti structures in ammonia ambient

Y. L. Zou; T. L. Alford; Yuxiao Zeng; F. Deng; S. S. Lau; T. Laursen; A. I. Amali; B. M. Ullrich

J. Appl. Phys. 82, 3321–3327 (1997) https://doi.org/10.1063/1.365641

Abstract

View articletitled, Formation of titanium nitride by annealing Ag/Ti structures in ammonia ambient

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Conduction-band tailing in parabolic band semiconductors

P. K. Chakraborty; J. C. Biswas

J. Appl. Phys. 82, 3328–3333 (1997) https://doi.org/10.1063/1.365642

Abstract

View articletitled, Conduction-band tailing in parabolic band semiconductors

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The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis

Stephen K. O’Leary; S. R. Johnson; P. K. Lim

J. Appl. Phys. 82, 3334–3340 (1997) https://doi.org/10.1063/1.365643

Abstract

View articletitled, The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysis

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Nonlinearities in the current–voltage characteristics of neutron transmutation doped germanium at millikelvin temperatures

N. Perrin

J. Appl. Phys. 82, 3341–3345 (1997) https://doi.org/10.1063/1.365644

Abstract

View articletitled, Nonlinearities in the current–voltage characteristics of neutron transmutation doped germanium at millikelvin temperatures

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The EL2-like metastable defect and the $n$ - to $p$ -type transition in silicon planar-doped GaAs

M. I. N. da Silva; A. G. de Oliveira; G. M. Ribeiro; R. M. Rubinger; J. A. Corrêa; M. V. Baeta Moreira

J. Appl. Phys. 82, 3346–3350 (1997) https://doi.org/10.1063/1.365645

Abstract

View articletitled, The EL2-like metastable defect and the <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>- to <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type transition in silicon planar-doped GaAs

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Influence of the doping profile and deep level trap characteristics on generation-recombination noise

A. Godoy; J. A. Jiménez-Tejada; A. Palma; P. Cartujo

J. Appl. Phys. 82, 3351–3357 (1997) https://doi.org/10.1063/1.365647

Abstract

View articletitled, Influence of the doping profile and deep level trap characteristics on generation-recombination noise

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High field transport in semi-insulating GaAs: A promising material for solid-state detectors

J. J. Mareš; J. Krištofik; P. Hubı́k; K. Jurek; S. Pospı́šil; J. Kubašta

J. Appl. Phys. 82, 3358–3362 (1997) https://doi.org/10.1063/1.365648

Abstract

View articletitled, High field transport in semi-insulating GaAs: A promising material for solid-state detectors

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Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems

SeGi Yu; K. W. Kim; Michael A. Stroscio; G. J. Iafrate; J.-P. Sun; G. I. Haddad

J. Appl. Phys. 82, 3363–3367 (1997) https://doi.org/10.1063/1.365649

Abstract

View articletitled, Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems

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$Γ- X$ electron transfer in a triple-barrier heterostructure

Gyungock Kim; Dong-Wan Roh; Seung Won Paek; El-Hang Lee

J. Appl. Phys. 82, 3368–3373 (1997) https://doi.org/10.1063/1.365673

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">Γ-</mi><mi mathvariant="normal" xmlns="">X</mi></math> electron transfer in a triple-barrier heterostructure

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Band offsets at the GaInP/GaAs heterojunction

A. Lindell; M. Pessa; A. Salokatve; F. Bernardini; R. M. Nieminen; M. Paalanen

J. Appl. Phys. 82, 3374–3380 (1997) https://doi.org/10.1063/1.365650

Abstract

View articletitled, Band offsets at the GaInP/GaAs heterojunction

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Current bistability and switching in weakly coupled superlattices GaAs/AlGaAs

G. K. Rasulova; Yu. A. Efimov; V. N. Murzin

J. Appl. Phys. 82, 3381–3384 (1997) https://doi.org/10.1063/1.365651

Abstract

View articletitled, Current bistability and switching in weakly coupled superlattices GaAs/AlGaAs

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Investigation of short wavelength intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate

Takashi Asano; Susumu Noda; Tomoki Abe; Akio Sasaki

J. Appl. Phys. 82, 3385–3391 (1997) https://doi.org/10.1063/1.365652

Abstract

View articletitled, Investigation of short wavelength intersubband transitions in InGaAs/AlAs quantum wells on GaAs substrate

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Hot-phonon effects on electron runaway from GaAs quantum wires

G. Paulavičius; R. Mickevičius; V. Mitin; M. A. Stroscio

J. Appl. Phys. 82, 3392–3395 (1997) https://doi.org/10.1063/1.365653

Abstract

View articletitled, Hot-phonon effects on electron runaway from GaAs quantum wires

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Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots

S. Sauvage; P. Boucaud; F. H. Julien; J.-M. Gérard; J.-Y. Marzin

J. Appl. Phys. 82, 3396–3401 (1997) https://doi.org/10.1063/1.365654

Abstract

View articletitled, Infrared spectroscopy of intraband transitions in self-organized InAs/GaAs quantum dots

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Electronic states in ZnSe/ZnTe type-II superlattice studied by capacitance transient spectroscopy

S. Q. Wang; F. Lu; H. D. Jung; C. D. Song; Z. Q. Zhu; H. Okushi; B. C. Cavenett; T. Yao

J. Appl. Phys. 82, 3402–3407 (1997) https://doi.org/10.1063/1.365655

Abstract

View articletitled, Electronic states in ZnSe/ZnTe type-II superlattice studied by capacitance transient spectroscopy

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An exploratory study of the conduction mechanism of hydrogenated nanocrystalline silicon films

Yuliang He; Yayi Wei; Guozhen Zheng; Minbin Yu; Min Liu

J. Appl. Phys. 82, 3408–3413 (1997) https://doi.org/10.1063/1.365656

Abstract

View articletitled, An exploratory study of the conduction mechanism of hydrogenated nanocrystalline silicon films

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The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells

Fei Long; W. E. Hagston; P. Harrison; T. Stirner

J. Appl. Phys. 82, 3414–3421 (1997) https://doi.org/10.1063/1.365657

Abstract

View articletitled, The structural dependence of the effective mass and Luttinger parameters in semiconductor quantum wells

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Surface state density distribution of semiconducting diamond films measured from the ${Al/CaF}_{2} /i$ -diamond metal-insulator-semiconductor diodes and transistors

Young Yun; Tetsuro Maki; Takeshi Kobayashi

J. Appl. Phys. 82, 3422–3429 (1997) https://doi.org/10.1063/1.365658

Abstract

View articletitled, Surface state density distribution of semiconducting diamond films measured from the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al/CaF</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi xmlns="">/i</mi></math>-diamond metal-insulator-semiconductor diodes and transistors

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Spatial texture distribution in thermomechanically deformed 2–14–1-based magnets

L. H. Lewis; T. R. Thurston; V. Panchanathan; U. Wildgruber; D. O. Welch

J. Appl. Phys. 82, 3430–3441 (1997) https://doi.org/10.1063/1.365659

Abstract

View articletitled, Spatial texture distribution in thermomechanically deformed 2–14–1-based magnets

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Switching field interval of the sensitive magnetic layer in exchange-biased spin valves

Th. G. S. M. Rijks; R. F. O. Reneerkens; R. Coehoorn; J. C. S. Kools; M. F. Gillies; J. N. Chapman; W. J. M. de Jonge

J. Appl. Phys. 82, 3442–3451 (1997) https://doi.org/10.1063/1.365660

Abstract

View articletitled, Switching field interval of the sensitive magnetic layer in exchange-biased spin valves

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The magnetic properties of ${Gd}_{2} {Co}_{17−x} {Ga}_{x}$ compounds

Bing Liang; Bao-gen Shen; Fang-wei Wang; Tong-yun Zhao; Zhao-hua Cheng; Shao-ying Zhang; Hua-yang Gong; Wen-shan Zhan

J. Appl. Phys. 82, 3452–3455 (1997) https://doi.org/10.1063/1.365757

Abstract

View articletitled, The magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Gd</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mtext>17−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi>x</mi></mrow></msub></math> compounds

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Carbon-related platinum defects in silicon: An electron paramagnetic resonance study of high spin states

O. Scheerer; M. Höhne; U. Juda; H. Riemann

J. Appl. Phys. 82, 3456–3461 (1997) https://doi.org/10.1063/1.365661

Abstract

View articletitled, Carbon-related platinum defects in silicon: An electron paramagnetic resonance study of high spin states

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Recovery of time-dependent dielectric breakdown lifetime of thin oxide films by thermal annealing

Taisuke Furukawa; Akimasa Yuuki; Kouichi Ono

J. Appl. Phys. 82, 3462–3468 (1997) https://doi.org/10.1063/1.365662

Abstract

View articletitled, Recovery of time-dependent dielectric breakdown lifetime of thin oxide films by thermal annealing

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Electrical and mechanical properties of ferroelectric thin films laser ablated from a ${Pb}_{0.97} {Nd}_{0.02} {(Zr}_{0.55} {Ti}_{0.45} {)O}_{3}$ target

J. Lappalainen; J. Frantti; V. Lantto

J. Appl. Phys. 82, 3469–3477 (1997) https://doi.org/10.1063/1.365663

Abstract

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The temperature dependence of the transient current in ferroelectric $Pb ({Zr}_{x} {Ti}_{1−x}) O_{3}$ thin films for memory devices applications

Hong-ming Chen; Joseph Ya-min Lee

J. Appl. Phys. 82, 3478–3481 (1997) https://doi.org/10.1063/1.365664

Abstract

View articletitled, The temperature dependence of the transient current in ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films for memory devices applications

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Effect of oxygen to argon ratio on properties of ${(Ba,Sr)TiO}_{3}$ thin films prepared by radio-frequency magnetron sputtering

M. S. Tsai; S. C. Sun; T. Y. Tseng

J. Appl. Phys. 82, 3482–3487 (1997) https://doi.org/10.1063/1.365665

Abstract

View articletitled, Effect of oxygen to argon ratio on properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(Ba,Sr)TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films prepared by radio-frequency magnetron sputtering

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Quantitative analysis of piezoelectricity in simultaneously stretched and corona poled polyvinyl chloride films

Vivek Bharti; R. Nath

J. Appl. Phys. 82, 3488–3492 (1997) https://doi.org/10.1063/1.365666

Abstract

View articletitled, Quantitative analysis of piezoelectricity in simultaneously stretched and corona poled polyvinyl chloride films

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Two-dimensional model of photon recycling in direct gap semiconductor devices

Joseph W. Parks, Jr.; Kevin F. Brennan; Arlynn W. Smith

J. Appl. Phys. 82, 3493–3498 (1997) https://doi.org/10.1063/1.365622

Abstract

View articletitled, Two-dimensional model of photon recycling in direct gap semiconductor devices

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Shape-selective Raman scattering from surface phonon modes in aggregates of amorphous ${SiO}_{2}$ nanoparticles

Yu. D. Glinka; M. Jaroniec

J. Appl. Phys. 82, 3499–3507 (1997) https://doi.org/10.1063/1.365667

Abstract

View articletitled, Shape-selective Raman scattering from surface phonon modes in aggregates of amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> nanoparticles

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Optical properties of silicon pigmented alumina films

T. Tesfamichael; W. E. Vargas; E. Wäckelgård; G. A. Niklasson

J. Appl. Phys. 82, 3508–3513 (1997) https://doi.org/10.1063/1.365668

Abstract

View articletitled, Optical properties of silicon pigmented alumina films

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Light emitting mechanism of porous silicon

I. M. Chang; Y. F. Chen

J. Appl. Phys. 82, 3514–3518 (1997) https://doi.org/10.1063/1.365669

Abstract

View articletitled, Light emitting mechanism of porous silicon

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Photoelectron and infrared spectroscopy of semi-insulating silicon layers

M. Trchová; J. Zemek; K. Jurek

J. Appl. Phys. 82, 3519–3527 (1997) https://doi.org/10.1063/1.365670

Abstract

View articletitled, Photoelectron and infrared spectroscopy of semi-insulating silicon layers

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Optical properties of hexagonal GaN

Takahiro Kawashima; Hisashi Yoshikawa; Sadao Adachi; Shunro Fuke; Kohji Ohtsuka

J. Appl. Phys. 82, 3528–3535 (1997) https://doi.org/10.1063/1.365671

Abstract

View articletitled, Optical properties of hexagonal GaN

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Monte Carlo simulation of pulsed laser ablation from two-component target into diluted ambient gas

T. E. Itina; W. Marine; M. Autric

J. Appl. Phys. 82, 3536–3542 (1997) https://doi.org/10.1063/1.365672

Abstract

View articletitled, Monte Carlo simulation of pulsed laser ablation from two-component target into diluted ambient gas

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Ultraviolet laser light scattering diagnostics of the plume in pulsed-laser deposition process

Tatsuo Okada; Yoshiki Nakata; Mitsuo Maeda; W. K. A. Kumuduni

J. Appl. Phys. 82, 3543–3547 (1997) https://doi.org/10.1063/1.366283

Abstract

View articletitled, Ultraviolet laser light scattering diagnostics of the plume in pulsed-laser deposition process

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Lateral oxidation of buried ${Al}_{x} {Ga}_{1−x} As$ layers in a wet ambient

T. Langenfelder; St. Schröder; H. Grothe

J. Appl. Phys. 82, 3548–3551 (1997) https://doi.org/10.1063/1.365758

Abstract

View articletitled, Lateral oxidation of buried <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> layers in a wet ambient

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Molecular dynamics simulation of reactive ion etching of Si by energetic Cl ions

D. E. Hanson; A. F. Voter; J. D. Kress

J. Appl. Phys. 82, 3552–3559 (1997) https://doi.org/10.1063/1.365674

Abstract

View articletitled, Molecular dynamics simulation of reactive ion etching of Si by energetic Cl ions

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Temperature mapping of reactive gas layer in thermal plasma chemical vapor deposition

Jussi Larjo; Joachim Walewski; Rolf Hernberg

J. Appl. Phys. 82, 3560–3566 (1997) https://doi.org/10.1063/1.365687

Abstract

View articletitled, Temperature mapping of reactive gas layer in thermal plasma chemical vapor deposition

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The chemisorption of $H_{2} {C[Si(CH}_{3})_{3}]_{2}$ and ${Si}_{6} {(CH}_{3})_{12}$ on Si(100) surfaces

D. G. J. Sutherland; L. J. Terminello; J. A. Carlisle; I. Jiménez; F. J. Himpsel; K. M. Baines; D. K. Shuh; W. M. Tong

J. Appl. Phys. 82, 3567–3571 (1997) https://doi.org/10.1063/1.365759

Abstract

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Analysis of transient photocurrents in ${Cu(In,Ga)Se}_{2}$ thin film solar cells

M. Nishitani; T. Negami; N. Kohara; T. Wada

J. Appl. Phys. 82, 3572–3575 (1997) https://doi.org/10.1063/1.365675

Abstract

View articletitled, Analysis of transient photocurrents in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu(In,Ga)Se</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> thin film solar cells

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AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

W. E. Hoke; P. S. Lyman; J. J. Mosca; R. A. McTaggart; P. J. Lemonias; R. M. Beaudoin; A. Torabi; W. A. Bonner; B. Lent; L.-J. Chou; K. C. Hsieh

J. Appl. Phys. 82, 3576–3580 (1997) https://doi.org/10.1063/1.365676

Abstract

View articletitled, AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

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Gummel–Poon model for Npn heterojunction bipolar phototransistors

S. M. Frimel; K. P. Roenker

J. Appl. Phys. 82, 3581–3592 (1997) https://doi.org/10.1063/1.365677

Abstract

View articletitled, Gummel–Poon model for Npn heterojunction bipolar phototransistors

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Magnetization curling in films used for perpendicular magnetic recording

Y. Ishii; S. Hasegawa; M. Saito; Y. Tabayashi; Y. Kasajima; T. Hashimoto

J. Appl. Phys. 82, 3593–3597 (1997) https://doi.org/10.1063/1.365678

Abstract

View articletitled, Magnetization curling in films used for perpendicular magnetic recording

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Double relaxation oscillation superconducting quantum interference devices with gradiometric layout

M. J. van Duuren; G. C. S. Brons; D. J. Adelerhof; J. Flokstra; H. Rogalla

J. Appl. Phys. 82, 3598–3606 (1997) https://doi.org/10.1063/1.365679

Abstract

View articletitled, Double relaxation oscillation superconducting quantum interference devices with gradiometric layout

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Experimental analysis of the phase dynamics in small parallel arrays of Josephson junctions

Umberto Gambardella; Gaia Grimaldi; Pasqualina Caputo; Sandro Pace

J. Appl. Phys. 82, 3607–3611 (1997) https://doi.org/10.1063/1.366288

Abstract

View articletitled, Experimental analysis of the phase dynamics in small parallel arrays of Josephson junctions

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Generalized analysis of the use of induction loop probes in azimuthally symmetric inductively coupled plasma sources

F. A. Haas; N. St. J. Braithwaite

J. Appl. Phys. 82, 3612–3614 (1997) https://doi.org/10.1063/1.365680

Abstract

View articletitled, Generalized analysis of the use of induction loop probes in azimuthally symmetric inductively coupled plasma sources

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Laser detection of ${CH}_{2}$ in ${CH}_{4} {–H}_{2}$ mixture dc discharges

G. Baravian; G. Sultan; J. Amorim; C. Hayaud

J. Appl. Phys. 82, 3615–3617 (1997) https://doi.org/10.1063/1.365681

Abstract

View articletitled, Laser detection of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">–H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> mixture dc discharges

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Theory of the acoustic signature of topological and morphological defects in SiC/porous SiC laminated ceramics

R. Esquivel-Sirvent; Cecilia Noguez

J. Appl. Phys. 82, 3618–3620 (1997) https://doi.org/10.1063/1.365682

Abstract

View articletitled, Theory of the acoustic signature of topological and morphological defects in SiC/porous SiC laminated ceramics

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Pulsed KrF laser annealing of ${Ni/Si}_{0.76} {Ge}_{0.24}$ films

Jian-Shing Luo; Wen-Tai Lin; C. Y. Chang; W. C. Tsai

J. Appl. Phys. 82, 3621–3623 (1997) https://doi.org/10.1063/1.365683

Abstract

View articletitled, Pulsed KrF laser annealing of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ni/Si</mi><mrow><mi mathvariant="normal">0.76</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi mathvariant="normal">0.24</mi></mrow></msub></math> films

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Influence of the spatial extent of the most probable potential well on the distribution of electronic states in disordered semiconductors

Stephen K. O’Leary; P. K. Lim

J. Appl. Phys. 82, 3624–3626 (1997) https://doi.org/10.1063/1.365684

Abstract

View articletitled, Influence of the spatial extent of the most probable potential well on the distribution of electronic states in disordered semiconductors

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Improved model of radiation damage to silicon solar cells

S. J. Taylor; M. Yamaguchi; M. Imaizumi; T. Ito

J. Appl. Phys. 82, 3627–3629 (1997) https://doi.org/10.1063/1.365685

Abstract

View articletitled, Improved model of radiation damage to silicon solar cells

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Addendum: Deep emission band at GaInP/GaAs interface

S. H. Kwok; P. Y. Yu; K. Uchida; T. Arai

J. Appl. Phys. 82, 3630–3632 (1997) https://doi.org/10.1063/1.365686

Abstract

View articletitled, Addendum: Deep emission band at GaInP/GaAs interface

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