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Multilambda Rabi cavities in atomic beam frequency standards

A. De Marchi; P. Tavella; E. Bava

J. Appl. Phys. 82, 4711–4718 (1997) https://doi.org/10.1063/1.366326

Abstract

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Low noise high- $T_{c}$ superconducting bolometers on silicon nitride membranes for far-infrared detection

M. J. M. E. de Nivelle; M. P. Bruijn; R. de Vries; J. J. Wijnbergen; P. A. J. de Korte; S. Sánchez; M. Elwenspoek; T. Heidenblut; B. Schwierzi; W. Michalke; E. Steinbeiss

J. Appl. Phys. 82, 4719–4726 (1997) https://doi.org/10.1063/1.366327

Abstract

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Waterfall lasers

Lee W. Casperson

J. Appl. Phys. 82, 4727–4731 (1997) https://doi.org/10.1063/1.366328

Abstract

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Spatial, temporal, and spectral effects and conversion efficiencies in second-harmonic generation from mode-locked lasers in surface-emitting geometry

Yujie J. Ding; Jacob B. Khurgin

J. Appl. Phys. 82, 4732–4739 (1997) https://doi.org/10.1063/1.366329

Abstract

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Theory of second harmonic generation in composites of nonlinear dielectrics

P. M. Hui; D. Stroud

J. Appl. Phys. 82, 4740–4743 (1997) https://doi.org/10.1063/1.366398

Abstract

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Melting and vaporization for large-area film removal with a chemical oxygen–iodine laser

J. Xie; A. Kar

J. Appl. Phys. 82, 4744–4751 (1997) https://doi.org/10.1063/1.366330

Abstract

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Proton exchange of quasistoichiometric ${LiNbO}_{3}$

A. Alcázar deV.; J. Rams; J. M. Cabrera; F. Agulló-López

J. Appl. Phys. 82, 4752–4757 (1997) https://doi.org/10.1063/1.366331

Abstract

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Real-time detection of laser-induced transient gratings and surface acoustic wave pulses with a Michelson interferometer

Yao-chun Shen; Peter Hess

J. Appl. Phys. 82, 4758–4762 (1997) https://doi.org/10.1063/1.366332

Abstract

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Chemical kinetics in low pressure acetylene radio frequency glow discharges

James R. Doyle

J. Appl. Phys. 82, 4763–4771 (1997) https://doi.org/10.1063/1.366333

Abstract

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Comparison of hydrogen atom density measurements in three types of discharges using $H_{2} {–N}_{2}$ gas mixtures

B. N. Ganguly; P. Bletzinger

J. Appl. Phys. 82, 4772–4776 (1997) https://doi.org/10.1063/1.366334

Abstract

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Absolute density measurement of cyanogen fluoride in ${CHF}_{3} {/N}_{2}$ electron cyclotron resonance plasma using infrared diode laser absorption spectroscopy

Koji Miyata; Hiroyoshi Arai; Masaru Hori; Toshio Goto

J. Appl. Phys. 82, 4777–4780 (1997) https://doi.org/10.1063/1.366335

Abstract

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Coupling of chemical kinetics, gas dynamics, and charged particle kinetics models for the analysis of NO reduction from flue gases

O. Eichwald; M. Yousfi; A. Hennad; M. D. Benabdessadok

J. Appl. Phys. 82, 4781–4794 (1997) https://doi.org/10.1063/1.366336

Abstract

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Chiral-homeotropic liquid crystal cells for high contrast and low voltage displays

Shin-Tson Wu; Chiung-Sheng Wu; Kun-Wei Lin

J. Appl. Phys. 82, 4795–4799 (1997) https://doi.org/10.1063/1.366337

Abstract

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Electronic effects of ion damage in hydrogenated amorphous silicon alloys

R. A. C. M. M. van Swaaij; A. D. Annis; B. J. Sealy; J. M. Shannon

J. Appl. Phys. 82, 4800–4804 (1997) https://doi.org/10.1063/1.366338

Abstract

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Depth distribution of silicon-ion induced defects in crystalline silicon

S. T. Chavan; S. D. Dhole; V. N. Bhoraskar; D. Kanjilal; G. K. Mehta

J. Appl. Phys. 82, 4805–4809 (1997) https://doi.org/10.1063/1.366339

Abstract

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Local structures of isovalent and heterovalent dilute impurities in Si crystal probed by fluorescence x-ray absorption fine structure

Shiqiang Wei; Hiroyuki Oyanagi; Hitoshi Kawanami; Kunihiro Sakamoto; Tsunenori Sakamoto; Kazuhisa Tamura; Naurang L. Saini; Kohei Uosaki

J. Appl. Phys. 82, 4810–4815 (1997) https://doi.org/10.1063/1.366340

Abstract

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Dislocation model of a subsurface crack

Fuqian Yang; J. C. M. Li

J. Appl. Phys. 82, 4816–4822 (1997) https://doi.org/10.1063/1.366341

Abstract

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Molecular dynamics simulation of single and repeated indentation

K. Komvopoulos; W. Yan

J. Appl. Phys. 82, 4823–4830 (1997) https://doi.org/10.1063/1.366342

Abstract

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Wave propagation in an epoxy-graphite laminate

B. E. Clements; J. N. Johnson; F. L. Addessio

J. Appl. Phys. 82, 4831–4837 (1997) https://doi.org/10.1063/1.366343

Abstract

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On the applicability of the Ivantsov growth equation

Zi-Kui Liu; Y. Austin Chang

J. Appl. Phys. 82, 4838–4841 (1997) https://doi.org/10.1063/1.366344

Abstract

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The activation energy for GaAs/AlGaAs interdiffusion

S. F. Wee; M. K. Chai; K. P. Homewood; W. P. Gillin

J. Appl. Phys. 82, 4842–4846 (1997) https://doi.org/10.1063/1.366345

Abstract

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Nanostructured Ta-Si-N diffusion barriers for Cu metallization

Dong Joon Kim; Yong Tae Kim; Jong-Wan Park

J. Appl. Phys. 82, 4847–4851 (1997) https://doi.org/10.1063/1.366346

Abstract

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Multilayer film stability

N. Sridhar; J. M. Rickman; D. J. Srolovitz

J. Appl. Phys. 82, 4852–4859 (1997) https://doi.org/10.1063/1.366347

Abstract

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Strains in ${HgTe/Hg}_{0.1} {Cd}_{0.9} Te$ superlattices grown on (211)B ${Cd}_{0.96} {Zn}_{0.04} Te$ substrates

M. Li; R. Gall; C. R. Becker; T. Gerhard; W. Faschinger; G. Landwehr

J. Appl. Phys. 82, 4860–4864 (1997) https://doi.org/10.1063/1.366399

Abstract

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Analysis of abnormal x-ray diffraction peak broadening from InGaAs/GaAs multiple quantum wells

In Kim; Byung-Doo Choe; Sang Koo Park; Weon Guk Jeong

J. Appl. Phys. 82, 4865–4869 (1997) https://doi.org/10.1063/1.366348

Abstract

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Relaxation mechanisms in single ${In}_{x} {Ga}_{1−x} As$ epilayers grown on misoriented $GaAs(\bar{111}) B$ substrates

Saroja P. Edirisinghe; Anne E. Staton-Bevan; Robert Grey

J. Appl. Phys. 82, 4870–4876 (1997) https://doi.org/10.1063/1.366349

Abstract

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Effects of thermal treatment of low-temperature GaN buffer layers on the quality of subsequent GaN layers

L. Sugiura; K. Itaya; J. Nishio; H. Fujimoto; Y. Kokubun

J. Appl. Phys. 82, 4877–4882 (1997) https://doi.org/10.1063/1.366350

Abstract

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Faceted GaInAs/InP nanostructures grown by selective area chemical beam epitaxy

P. Finnie; S. Charbonneau; M. Buchanan; C. Lacelle; J. Fraser; A. P. Roth

J. Appl. Phys. 82, 4883–4888 (1997) https://doi.org/10.1063/1.366351

Abstract

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Structural defects in ${Hg}_{1−x} {Cd}_{x} I_{2}$ layers grown on CdTe substrates by vapor phase epitaxy

N. V. Sochinskii; V. Muñoz; J. I. Espeso; J. Baruchel; C. Marı́n; E. Diéguez

J. Appl. Phys. 82, 4889–4891 (1997) https://doi.org/10.1063/1.366352

Abstract

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Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices

G. Patriarche; F. Jeannès; J.-L. Oudar; F. Glas

J. Appl. Phys. 82, 4892–4903 (1997) https://doi.org/10.1063/1.366353

Abstract

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Study of the morphology of the InAs-on-AlSb interface

K. C. Wong; Celeste Yang; Mason Thomas; Hans-Richard Blank

J. Appl. Phys. 82, 4904–4907 (1997) https://doi.org/10.1063/1.366354

Abstract

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Pulsed laser deposition of optical waveguiding strontium barium niobate films

Y. Y. Zhu; R. F. Xiao; G. K. L. Wong

J. Appl. Phys. 82, 4908–4911 (1997) https://doi.org/10.1063/1.366355

Abstract

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Effect of ultraviolet light irradiation on amorphous carbon nitride films

Mei Zhang; Yoshikazu Nakayama

J. Appl. Phys. 82, 4912–4915 (1997) https://doi.org/10.1063/1.366356

Abstract

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Density of ultradry ultrathin silicon oxide films and its correlation with reliability

Hiroshi Yamada

J. Appl. Phys. 82, 4916–4922 (1997) https://doi.org/10.1063/1.366357

Abstract

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Theoretical analysis of disorder effects on electronic and optical properties in InGaAsP quaternary alloy

B. Bouhafs; H. Aourag; M. Ferhat; A. Zaoui; M. Certier

J. Appl. Phys. 82, 4923–4930 (1997) https://doi.org/10.1063/1.366358

Abstract

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Zn incorporation and band gap shrinkage in $p$ -type GaAs

Mantu Kumar Hudait; Prasanta Modak; Shyam Hardikar; S. B. Krupanidhi

J. Appl. Phys. 82, 4931–4937 (1997) https://doi.org/10.1063/1.366359

Abstract

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Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon

Pietro P. Altermatt; Jan Schmidt; Gernot Heiser; Armin G. Aberle

J. Appl. Phys. 82, 4938–4944 (1997) https://doi.org/10.1063/1.366360

Abstract

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Hydrogen-oxygen-vacancy complexes in Czochralski-grown silicon crystal

H. Hatakeyama; M. Suezawa

J. Appl. Phys. 82, 4945–4951 (1997) https://doi.org/10.1063/1.366361

Abstract

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Effect of long term heat treatment on the electrical properties of ${RSe}_{1.47}$ (R=La and Nd) and ${LaSe}_{1.48}$

J. Michiels; K. A. Gschneidner, Jr.

J. Appl. Phys. 82, 4952–4956 (1997) https://doi.org/10.1063/1.366293

Abstract

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Electron transport in a starburst oxadiazole

J. Bettenhausen; P. Strohriegl; W. Brütting; H. Tokuhisa; T. Tsutsui

J. Appl. Phys. 82, 4957–4961 (1997) https://doi.org/10.1063/1.366396

Abstract

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A study of poly $(p$ -phenylenevinylene) and its derivatives using x-ray photoelectron spectroscopy

H. G. Lee; S. Kim; C. Hwang; V. Choong; Y. Park; Y. Gao; B. R. Hsieh

J. Appl. Phys. 82, 4962–4965 (1997) https://doi.org/10.1063/1.366362

Abstract

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Steady-state and transient current transport in undoped polycrystalline diamond films

Anders Jauhiainen; Stefan Bengtsson; Olof Engström

J. Appl. Phys. 82, 4966–4976 (1997) https://doi.org/10.1063/1.366363

Abstract

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Charge transport in strained ${Si}_{1−y} C_{y}$ and ${Si}_{1−x−y} {Ge}_{x} C_{y}$ alloys on Si(001)

H. J. Osten; P. Gaworzewski

J. Appl. Phys. 82, 4977–4981 (1997) https://doi.org/10.1063/1.366364

Abstract

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Electronic effects of sodium in epitaxial ${CuIn}_{1−x} {Ga}_{x} {Se}_{2}$

David J. Schroeder; Angus A. Rockett

J. Appl. Phys. 82, 4982–4985 (1997) https://doi.org/10.1063/1.366365

Abstract

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Photoinduced transient spectroscopy of deep levels in ${GaAs/Ga}_{1−x} {Al}_{x} As$ multiple quantum wells

M. Ç. Arikan; S. Cenk; N. Balkan

J. Appl. Phys. 82, 4986–4989 (1997) https://doi.org/10.1063/1.366366

Abstract

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Structural and electrical properties of $p^{+} n$ junctions in Si by low energy ${Ga}^{+}$ implantation

C. P. Parry; T. E. Whall; E. H. C. Parker

J. Appl. Phys. 82, 4990–4993 (1997) https://doi.org/10.1063/1.366367

Abstract

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Optical and electrical characterization of nitrogen ion implanted $ZnSSe /p- GaAs$ (100)

H. Hong; W. A. Anderson; J. Haetty; A. Petrou; E. H. Lee; H. C. Chang; M. H. Na; H. Luo; J. Peck; T. J. Mountziaris

J. Appl. Phys. 82, 4994–4999 (1997) https://doi.org/10.1063/1.366368

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Electrical characterization of subbands in the HgCdTe surface layer

Y. S. Gui; G. Z. Zheng; J. H. Chu; S. L. Guo; X. C. Zhang; D. Y. Tang; Yi Cai

J. Appl. Phys. 82, 5000–5004 (1997) https://doi.org/10.1063/1.366369

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Effects of barrier height distribution on the behavior of a Schottky diode

Subhash Chand; Jitendra Kumar

J. Appl. Phys. 82, 5005–5010 (1997) https://doi.org/10.1063/1.366370

Abstract

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Thermal degradation mechanism of Ti/Pt/Au Schottky contact to $n$ -type GaAs

Jong-Lam Lee; Jae Kyoung Mun; Byung-Teak Lee

J. Appl. Phys. 82, 5011–5016 (1997) https://doi.org/10.1063/1.366371

Abstract

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Properties and density of states of the interface between silicon and carbon films rich in ${sp}^{3}$ bonds

S. Logothetidis; E. Evangelou; N. Konofaos

J. Appl. Phys. 82, 5017–5020 (1997) https://doi.org/10.1063/1.366402

Abstract

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High-quality ${Nb}_{3} Sn$ thin films on sapphire prepared by tin vapor diffusion

M. Perpeet; M. A. Hein; G. Müller; H. Piel; J. Pouryamout; W. Diete

J. Appl. Phys. 82, 5021–5023 (1997) https://doi.org/10.1063/1.366372

Abstract

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Experimental estimation of the hot spot size in Nb-based Josephson tunnel junctions using Abrikosov vortices

R. Cristiano; L. Frunzio; S. Pagano; V. G. Palmieri; M. P. Lisitskii

J. Appl. Phys. 82, 5024–5029 (1997) https://doi.org/10.1063/1.366373

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Current–voltage characterization of the vortex motion in ${YBa}_{2} {Cu}_{3} O_{7−δ}$ microbridges and the implications on the development of superconducting flux flow transistors

P. Bernstein; C. Picard; M. Pannetier; Ph. Lecoeur; J. F. Hamet; T. D. Doan; J. P. Contour; M. Drouet; F. X. Regi

J. Appl. Phys. 82, 5030–5038 (1997) https://doi.org/10.1063/1.366374

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Effect of interface on magnetic anisotropy of Fe/Tb multilayers: Mössbauer effect study

Andrea E. Freitag; Ataur R. Chowdhury

J. Appl. Phys. 82, 5039–5042 (1997) https://doi.org/10.1063/1.366375

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Magneto-optical and optical properties of ordered and disordered Fe–Al alloy films

Yu. V. Kudryavtsev; V. V. Nemoshkalenko; Y. P. Lee; K. W. Kim

J. Appl. Phys. 82, 5043–5049 (1997) https://doi.org/10.1063/1.366376

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Effect of magnetic field annealing on the giant magnetoimpedance in FeCuMoSiB ribbons

Wanjun Ku; Fuding Ge; Jing Zhu

J. Appl. Phys. 82, 5050–5053 (1997) https://doi.org/10.1063/1.366377

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Structural and magnetic evolution of rapidly quenched Sm–Fe–Si–C alloys

Wei Tang; Zhi-Qiang Jin; Jian-Ron Zhang; Shi-Yuan Zhang; You-Wei Du

J. Appl. Phys. 82, 5054–5056 (1997) https://doi.org/10.1063/1.366378

Abstract

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Analysis of thermally stimulated currents measured on ionic conductors

S. Devautour; J. Vanderschueren; J. C. Giuntini; F. Henn; J. V. Zanchetta

J. Appl. Phys. 82, 5057–5062 (1997) https://doi.org/10.1063/1.366379

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Dielectric and transport properties of magnetic insulators irradiated with GeV heavy ions

J. M. Costantini; J. P. Salvetat; F. Brisard

J. Appl. Phys. 82, 5063–5071 (1997) https://doi.org/10.1063/1.366403

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Optical electromodulation of surface-intrinsic-doped structures

Jesús Urı́as; Raúl Balderas

J. Appl. Phys. 82, 5072–5076 (1997) https://doi.org/10.1063/1.366380

Abstract

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Crystal-temperature dependence of picosecond two-beam coupling gains in semi-insulating semiconductors

Kazuhide Kusakabe; Yasuo Tomita

J. Appl. Phys. 82, 5077–5081 (1997) https://doi.org/10.1063/1.366381

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Surface thermal expansion of metal under femtosecond laser irradiation

A. A. Maznev; J. Hohlfeld; J. Güdde

J. Appl. Phys. 82, 5082–5085 (1997) https://doi.org/10.1063/1.366382

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Low-temperature refractive indices of ${Cd}_{1−x} {Mn}_{x} Te$ and ${Cd}_{1−y} {Mg}_{y} Te$

R. André; Le Si Dang

J. Appl. Phys. 82, 5086–5089 (1997) https://doi.org/10.1063/1.366383

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Optical constants of epitaxial AlGaN films and their temperature dependence

D. Brunner; H. Angerer; E. Bustarret; F. Freudenberg; R. Höpler; R. Dimitrov; O. Ambacher; M. Stutzmann

J. Appl. Phys. 82, 5090–5096 (1997) https://doi.org/10.1063/1.366309

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Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC

V. Yu. Davydov; N. S. Averkiev; I. N. Goncharuk; D. K. Nelson; I. P. Nikitina; A. S. Polkovnikov; A. N. Smirnov; M. A. Jacobson; O. K. Semchinova

J. Appl. Phys. 82, 5097–5102 (1997) https://doi.org/10.1063/1.366310

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Photoluminescence characterization of biaxial tensile strained GaAs

Ki Soo Kim; Gye Mo Yang; Hyun Wook Shim; Kee Young Lim; Eun-Kyung Suh; Hyung Jae Lee

J. Appl. Phys. 82, 5103–5106 (1997) https://doi.org/10.1063/1.366311

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Characterization of unicompositional ${GaInP}_{2}$ ordering heterostructures grown by variation of V/III ratio

C. E. Inglefield; M. C. DeLong; P. C. Taylor; Y. S. Chun; I. H. Ho; G. B. Stringfellow; J. H. Kim; T. Y. Seong

J. Appl. Phys. 82, 5107–5113 (1997) https://doi.org/10.1063/1.366312

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Persistent spectral hole burning of ${Eu}^{3+}$ ions in sodium aluminosilicate glasses

Koji Fujita; Kazuyuki Hirao; Katsuhisa Tanaka; Naohiro Soga; Hiroko Sasaki

J. Appl. Phys. 82, 5114–5120 (1997) https://doi.org/10.1063/1.366313

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Influence of the host lattice on the photoluminescence of ${Ni}^{2+}$ ions in ${Rb}_{1−x} {Cs}_{x} {CaF}_{3}$ and ${RbCa}_{1−x} {Cd}_{x} F_{3}$ crystals

F. Lahoz; M. Dı́az; B. Villacampa; R. Cases; R. Alcalá

J. Appl. Phys. 82, 5121–5125 (1997) https://doi.org/10.1063/1.366314

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Microstructure and magneto-optical properties of Pr–Ni substituted Ba hexaferrite films prepared by sputtering

M. Gomi; J. Cho; M. Abe

J. Appl. Phys. 82, 5126–5131 (1997) https://doi.org/10.1063/1.366315

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Optical parameters of pyrite thin films

C. de las Heras; G. Lifante

J. Appl. Phys. 82, 5132–5137 (1997) https://doi.org/10.1063/1.366316

Abstract

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Microstructure and atomic effects on the electroluminescent efficiency of $SrS:Ce$ thin film devices

W. L. Warren; C. H. Seager; S.-S. Sun; A. Naman; P. H. Holloway; K. S. Jones; E. Soininen

J. Appl. Phys. 82, 5138–5143 (1997) https://doi.org/10.1063/1.366547

Abstract

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Annealing-induced blue shift in luminescence band from Si-implanted ${SiO}_{2}$ layer

A. D. Lan; B. X. Liu; X. D. Bai

J. Appl. Phys. 82, 5144–5147 (1997) https://doi.org/10.1063/1.366317

Abstract

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Electron emission from a laser ablated and laser annealed BN thin film emitter

H. H. Busta; R. W. Pryor

J. Appl. Phys. 82, 5148–5153 (1997) https://doi.org/10.1063/1.366318

Abstract

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Synthesis and magnetic properties of iron nitride films deposited on Ge(100) by reactive ion beam sputtering

Xing-zhao Ding; Fu-min Zhang; Jian-sheng Yan; Hong-lie Shen; Xi Wang; Xiang-huai Liu; De-Fang Shen

J. Appl. Phys. 82, 5154–5158 (1997) https://doi.org/10.1063/1.366319

Abstract

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Short-pulse laser-induced crystallization of intrinsic and hydrogenated amorphous germanium thin films

M. Mulato; D. Toet; G. Aichmayr; P. V. Santos; I. Chambouleyron

J. Appl. Phys. 82, 5159–5166 (1997) https://doi.org/10.1063/1.366320

Abstract

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$p–n$ and $p–n–p$ junction arrays in ${CuInSe}_{2}$ crystals: Cathodoluminescence and capacitance study

G. A. Medvedkin; M. M. Sobolev; S. A. Solovjev

J. Appl. Phys. 82, 5167–5175 (1997) https://doi.org/10.1063/1.366321

Abstract

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Annealing method for operating quantum-cellular-automaton systems

M. Akazawa; Y. Amemiya; N. Shibata

J. Appl. Phys. 82, 5176–5184 (1997) https://doi.org/10.1063/1.366322

Abstract

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Harnessing reverse annealing phenomenon for shallow $p-n$ junction formation

L. Y. Krasnobaev; J. J. Cuomo; O. I. Vyletalina

J. Appl. Phys. 82, 5185–5190 (1997) https://doi.org/10.1063/1.366323

Abstract

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${Ge}_{x} {Si}_{1−x}$ infrared detectors I. Absorption in multiple quantum well and heterojunction internal photoemission structures

R. Strong; R. Misra; D. W. Greve; P. C. Zalm

J. Appl. Phys. 82, 5191–5198 (1997) https://doi.org/10.1063/1.366324

Abstract

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${Ge}_{x} {Si}_{1−x}$ infrared detectors II. Carrier escape probability and detector performance

R. Strong; D. W. Greve; P. Pellegrini; M. Weeks

J. Appl. Phys. 82, 5199–5205 (1997) https://doi.org/10.1063/1.366325

Abstract

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Effect of doping density on capacitance of resonant tunneling diodes

J. Jo; K. Alt; K. L. Wang

J. Appl. Phys. 82, 5206–5209 (1997) https://doi.org/10.1063/1.366384

Abstract

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Study of Hall and effective mobilities in pseudomorphic ${Si}_{1−x} {Ge}_{x}$ $p$ -channel metal–oxide–semiconductor field-effect transistors at room temperature and 4.2 K

R. J. P. Lander; C. J. Emeleus; B. M. McGregor; E. H. C. Parker; T. E. Whall; A. G. R. Evans; G. P. Kennedy

J. Appl. Phys. 82, 5210–5216 (1997) https://doi.org/10.1063/1.366385

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A self-consistent technique for the analysis of the temperature dependence of current–voltage and capacitance–voltage characteristics of a tunnel metal-insulator-semiconductor structure

P. Cova; A. Singh; R. A. Masut

J. Appl. Phys. 82, 5217–5226 (1997) https://doi.org/10.1063/1.366386

Abstract

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Near-ballistic transport and current–voltage characteristics of a GaAs/AlGaAs heterojunction field effect transistor under the influence of impurity scattering

Y. Fu; M. Willander

J. Appl. Phys. 82, 5227–5230 (1997) https://doi.org/10.1063/1.366387

Abstract

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Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors

S. P. McAlister; W. R. McKinnon; R. Driad; A. P. Renaud

J. Appl. Phys. 82, 5231–5234 (1997) https://doi.org/10.1063/1.366388

Abstract

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Experimental study of nonstationary electron transport in sub-0.1 μm metal–oxide–silicon devices: Velocity overshoot and its degradation mechanism

Tomohisa Mizuno; Ryuji Ohba

J. Appl. Phys. 82, 5235–5240 (1997) https://doi.org/10.1063/1.366389

Abstract

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Kinetics and aging in atomic layer epitaxy ZnS:Mn ac thin-film electroluminescent devices

B. Soenen; J. Van den Bossche; P. De Visschere

J. Appl. Phys. 82, 5241–5246 (1997) https://doi.org/10.1063/1.366390

Abstract

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Magnetic film inductors for radio frequency applications

V. Korenivski; R. B. van Dover

J. Appl. Phys. 82, 5247–5254 (1997) https://doi.org/10.1063/1.366391

Abstract

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Nanometer-scale lithography in thin carbon layers using electric field assisted scanning force microscopy

T. Mühl; H. Brückl; G. Weise; G. Reiss

J. Appl. Phys. 82, 5255–5258 (1997) https://doi.org/10.1063/1.366392

Abstract

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Basal-plane stacking faults and polymorphism in AlN, GaN, and InN

A. F. Wright

J. Appl. Phys. 82, 5259–5261 (1997) https://doi.org/10.1063/1.366393

Abstract

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Deep states in silicon on sapphire by transient-current spectroscopy

T. Sadoh; A. Matsushita; Y.-Q. Zhang; D.-J. Bai; A. Baba; A. Kenjo; T. Tsurushima; H. Mori; H. Nakashima

J. Appl. Phys. 82, 5262–5264 (1997) https://doi.org/10.1063/1.366394

Abstract

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Angular spectroscopic analysis: An optical characterization technique for laterally oxidized AlGaAs layers

P. Heremans; M. Kuijk; R. Windisch; J. Vanderhaegen; H. De Neve; R. Vounckx; G. Borghs

J. Appl. Phys. 82, 5265–5267 (1997) https://doi.org/10.1063/1.366395

Abstract

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Comment on “The analysis of piezoelectric/piezomagnetic composite materials containing ellipsoidal inclusions” [J. Appl. Phys. 81, 1378 (1997)]

Ce-Wen Nan

J. Appl. Phys. 82, 5268–5269 (1997) https://doi.org/10.1063/1.366401

Abstract

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Response to “Comment on ‘The analysis of piezoelectric/piezomagnetic composite materials containing ellipsoidal inclusions’ ” [J. Appl. Phys. 82, 5268 (1997)]

Jin H. Huang; Wen-Shyong Kuo

J. Appl. Phys. 82, 5270 (1997) https://doi.org/10.1063/1.366544

Abstract

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Response to “Comment on ‘Quantum well infrared detectors’ ” [J. Appl. Phys. 81, 7076 (1997)]

B. F. Levine

J. Appl. Phys. 82, 5271 (1997) https://doi.org/10.1063/1.366400

Abstract

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