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Slab plasmon polaritons and waveguide modes in four-layer resonant semiconductor waveguides

J. Stiens; R. Vounckx; I. Veretennicoff; A. Voronko; G. Shkerdin

J. Appl. Phys. 81, 1–10 (1997) https://doi.org/10.1063/1.363842

Abstract

View articletitled, Slab plasmon polaritons and waveguide modes in four-layer resonant semiconductor waveguides

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Efficient second-harmonic generation in novel Cerenkov type nonlinear-optical polymer waveguides

K. Schmitt; C. Benecke; M. Schadt

J. Appl. Phys. 81, 11–17 (1997) https://doi.org/10.1063/1.363997

Abstract

View articletitled, Efficient second-harmonic generation in novel Cerenkov type nonlinear-optical polymer waveguides

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Comparison of isotropic and anisotropic sensor effects in polymer lightguides

M. Biebricher; T. Kleckers; H. Franke

J. Appl. Phys. 81, 18–22 (1997) https://doi.org/10.1063/1.363840

Abstract

View articletitled, Comparison of isotropic and anisotropic sensor effects in polymer lightguides

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Artificial uniaxial and biaxial dielectrics with the use of photoinduced gratings

Changxi Yang; Pochi Yeh

J. Appl. Phys. 81, 23–29 (1997) https://doi.org/10.1063/1.363989

Abstract

View articletitled, Artificial uniaxial and biaxial dielectrics with the use of photoinduced gratings

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Numerical study of an optically pumped multimode $D_{2}$ O laser

K. Sasaki; T. Tsukishima

J. Appl. Phys. 81, 30–37 (1997) https://doi.org/10.1063/1.364111

Abstract

View articletitled, Numerical study of an optically pumped multimode <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">D</mi><mrow><mn>2</mn></mrow></msub></math>O laser

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Kinetics of low pressure rf discharges with dust particles

De-Zhen Wang; J. Q. Dong

J. Appl. Phys. 81, 38–42 (1997) https://doi.org/10.1063/1.364124

Abstract

View articletitled, Kinetics of low pressure rf discharges with dust particles

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Ion contribution to the deposition of silicon dioxide in oxygen/silane helicon diffusion plasmas

C. Charles; R. W. Boswell

J. Appl. Phys. 81, 43–49 (1997) https://doi.org/10.1063/1.364103

Abstract

View articletitled, Ion contribution to the deposition of silicon dioxide in oxygen/silane helicon diffusion plasmas

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Extinguishing by “slow quenching’’ in a thick grid Cs–Ba tacitron

Bernard Wernsman; Mohamed S. El-Genk

J. Appl. Phys. 81, 50–57 (1997) https://doi.org/10.1063/1.364128

Abstract

View articletitled, Extinguishing by “slow quenching’’ in a thick grid Cs–Ba tacitron

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Simulation of radiation effects on three-dimensional computer optical memories

M. Moscovitch; D. Emfietzoglou

J. Appl. Phys. 81, 58–69 (1997) https://doi.org/10.1063/1.364096

Abstract

View articletitled, Simulation of radiation effects on three-dimensional computer optical memories

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Simple method for the calculation of the deformation profiles in chiral nematic liquid crystal cells with asymmetric pretilt

C.-J. Chen; A. Lien; M. I. Nathan

J. Appl. Phys. 81, 70–73 (1997) https://doi.org/10.1063/1.364097

Abstract

View articletitled, Simple method for the calculation of the deformation profiles in chiral nematic liquid crystal cells with asymmetric pretilt

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Amorphous {100} platelet formation in (100) Si induced by hydrogen plasma treatment

Ki-Hyun Hwang; Jin-Won Park; Euijoon Yoon; Ki-Woong Whang; Jeong Yong Lee

J. Appl. Phys. 81, 74–77 (1997) https://doi.org/10.1063/1.364098

Abstract

View articletitled, Amorphous {100} platelet formation in (100) Si induced by hydrogen plasma treatment

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Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon

G. Z. Pan; K. N. Tu; A. Prussin

J. Appl. Phys. 81, 78–84 (1997) https://doi.org/10.1063/1.364099

Abstract

View articletitled, Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon

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Transient stimulated Brillouin scattering and damage of optical glass

Haiwu Yu; Shaoxian Meng

J. Appl. Phys. 81, 85–88 (1997) https://doi.org/10.1063/1.364100

Abstract

View articletitled, Transient stimulated Brillouin scattering and damage of optical glass

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Kinetics of transformation with nucleation and growth mechanism: Special consideration of crystallographic relationship and epitaxial growth

Ge Yu; S. T. Lee; J. K. L. Lai; L. Ngai

J. Appl. Phys. 81, 89–95 (1997) https://doi.org/10.1063/1.364101

Abstract

View articletitled, Kinetics of transformation with nucleation and growth mechanism: Special consideration of crystallographic relationship and epitaxial growth

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Empirical bond-order potential description of thermodynamic properties of crystalline silicon

Lisa J. Porter; Sidney Yip; Masatake Yamaguchi; Hideo Kaburaki; Meijie Tang

J. Appl. Phys. 81, 96–106 (1997) https://doi.org/10.1063/1.364102

Abstract

View articletitled, Empirical bond-order potential description of thermodynamic properties of crystalline silicon

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A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon

Jingwei Xu; V. Krishnamoorthy; Kevin S. Jones; Mark E. Law

J. Appl. Phys. 81, 107–111 (1997) https://doi.org/10.1063/1.363994

Abstract

View articletitled, A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon

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Distribution of As atoms in InP/InPAs (1 monolayer)/InP heterostructures measured by x-ray crystal truncation rod scattering

M. Tabuchi; K. Fujibayashi; N. Yamada; Y. Takeda; H. Kamei

J. Appl. Phys. 81, 112–115 (1997) https://doi.org/10.1063/1.363995

Abstract

View articletitled, Distribution of As atoms in InP/InPAs (1 monolayer)/InP heterostructures measured by x-ray crystal truncation rod scattering

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High electronic excitations and ion beam mixing effects in high energy ion irradiated Fe/Si multilayers

Ph. Bauer; C. Dufour; C. Jaouen; G. Marchal; J. Pacaud; J. Grilhé; J. C. Jousset

J. Appl. Phys. 81, 116–125 (1997) https://doi.org/10.1063/1.363996

Abstract

View articletitled, High electronic excitations and ion beam mixing effects in high energy ion irradiated Fe/Si multilayers

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Reconstruction of the SiO₂ structure damaged by low-energy Ar-implanted ions

B. Garrido; J. Samitier; S. Bota; J. A. Moreno; J. Montserrat; J. R. Morante

J. Appl. Phys. 81, 126–134 (1997) https://doi.org/10.1063/1.363998

Abstract

View articletitled, Reconstruction of the SiO2 structure damaged by low-energy Ar-implanted ions

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Adhesion enhancement of ion beam mixed Cu/Al/polyimide

G. S. Chang; S. M. Jung; Y. S. Lee; I. S. Choi; C. N. Whang; J. J. Woo; Y. P. Lee

J. Appl. Phys. 81, 135–138 (1997) https://doi.org/10.1063/1.363999

Abstract

View articletitled, Adhesion enhancement of ion beam mixed Cu/Al/polyimide

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Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films

M. Chhowalla; J. Robertson; C. W. Chen; S. R. P. Silva; C. A. Davis; G. A. J. Amaratunga; W. I. Milne

J. Appl. Phys. 81, 139–145 (1997) https://doi.org/10.1063/1.364000

Abstract

View articletitled, Influence of ion energy and substrate temperature on the optical and electronic properties of tetrahedral amorphous carbon (ta-C) films

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Phase formation and stability of N⁺ implanted SiC thin films

R. Capelletti; A. Miotello; P. M. Ossi

J. Appl. Phys. 81, 146–149 (1997) https://doi.org/10.1063/1.364001

Abstract

View articletitled, Phase formation and stability of N+ implanted SiC thin films

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Segregation and trapping of erbium at a moving crystal-amorphous Si interface

A. Polman; J. S. Custer; P. M. Zagwijn; A. M. Molenbroek; P. F. A. Alkemade

J. Appl. Phys. 81, 150–153 (1997) https://doi.org/10.1063/1.364002

Abstract

View articletitled, Segregation and trapping of erbium at a moving crystal-amorphous Si interface

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Controlled cluster condensation into preformed nanometer-sized pits

H. Hövel; Th. Becker; A. Bettac; B. Reihl; M. Tschudy; E. J. Williams

J. Appl. Phys. 81, 154–158 (1997) https://doi.org/10.1063/1.364003

Abstract

View articletitled, Controlled cluster condensation into preformed nanometer-sized pits

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Digital-image-based models of two-dimensional microstructural evolution by surface diffusion and vapor transport

Jeffrey W. Bullard

J. Appl. Phys. 81, 159–168 (1997) https://doi.org/10.1063/1.364004

Abstract

View articletitled, Digital-image-based models of two-dimensional microstructural evolution by surface diffusion and vapor transport

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Comparison of the x-ray diffraction patterns of epitaxial V/δ-Mn, Cr/δ-Mn, and Fe/δ-Mn superlattices on Ge(001)

J. Pohl; M. J. Christensen; D. Huljic; J. Köhler; E. U. Malang; M. Albrecht; E. Bucher

J. Appl. Phys. 81, 169–174 (1997) https://doi.org/10.1063/1.364005

Abstract

View articletitled, Comparison of the x-ray diffraction patterns of epitaxial V/δ-Mn, Cr/δ-Mn, and Fe/δ-Mn superlattices on Ge(001)

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High-resolution grazing-incidence x-ray diffraction for characterization of defects in crystal surface layers

E. A. Kondrashkina; S. A. Stepanov; M. Schmidbauer; R. Opitz; R. Köhler; H. Rhan

J. Appl. Phys. 81, 175–183 (1997) https://doi.org/10.1063/1.363838

Abstract

View articletitled, High-resolution grazing-incidence x-ray diffraction for characterization of defects in crystal surface layers

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Aging effect of Co/C soft x-ray multilayer mirrors

E. Y. Jiang; H. L. Bai; R. Y. Tian; C. D. Wang

J. Appl. Phys. 81, 184–189 (1997) https://doi.org/10.1063/1.363839

Abstract

View articletitled, Aging effect of Co/C soft x-ray multilayer mirrors

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Structural and defect characterization of GaAs and Al_xGa_1−xAs grown at low temperature by molecular beam epitaxy

S. Fleischer; C. D. Beling; S. Fung; W. R. Nieveen; J. E. Squire; J. Q. Zheng; M. Missous

J. Appl. Phys. 81, 190–198 (1997) https://doi.org/10.1063/1.364105

Abstract

View articletitled, Structural and defect characterization of GaAs and AlxGa1−xAs grown at low temperature by molecular beam epitaxy

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Structural characterization of Si_0.7Ge_0.3 layers grown on Si(001) substrates by molecular beam epitaxy

T. Obata; K. Komeda; T. Nakao; H. Ueba; C. Tatsuyama

J. Appl. Phys. 81, 199–204 (1997) https://doi.org/10.1063/1.363841

Abstract

View articletitled, Structural characterization of Si0.7Ge0.3 layers grown on Si(001) substrates by molecular beam epitaxy

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Low temperature epitaxy of Si and ${Si}_{1−x} {Ge}_{x}$ by utrahigh vacuum-chemical molecular epitaxy

G. W. Huang; L. P. Chen; C. T. Chou; K. M. Chen; H. C. Tseng; W. C. Tasi; C. Y. Chang

J. Appl. Phys. 81, 205–210 (1997) https://doi.org/10.1063/1.363843

Abstract

View articletitled, Low temperature epitaxy of Si and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> by utrahigh vacuum-chemical molecular epitaxy

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Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

T. I. Kamins; E. C. Carr; R. S. Williams; S. J. Rosner

J. Appl. Phys. 81, 211–219 (1997) https://doi.org/10.1063/1.364084

Abstract

View articletitled, Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures

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Artificially layered films of ${CuBa}_{2}$ (⁠ ${Ca}_{1−x}$ ${Sr}_{x})_{n−1}$ ${Cu}_{n}$ $O_{y}$ grown using pulsed laser deposition

C. Aruta; G. Balestrino; S. Martellucci; A. Paoletti; G. Petrocelli

J. Appl. Phys. 81, 220–223 (1997) https://doi.org/10.1063/1.364085

Abstract

View articletitled, Artificially layered films of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuBa</mi><mrow><mn>2</mn></mrow></msub></math> (⁠<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mtext>1−x</mtext></mrow></msub></math><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mtext>)</mtext><mrow><mtext>n−1</mtext></mrow></msub></math><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi>n</mi></mrow></msub></math><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi>y</mi></mrow></msub></math> grown using pulsed laser deposition

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Raman spectra and lattice dynamics of intermixed AlAs/GaAs superlattices

M. P. Halsall; P. Dawson

J. Appl. Phys. 81, 224–233 (1997) https://doi.org/10.1063/1.364086

Abstract

View articletitled, Raman spectra and lattice dynamics of intermixed AlAs/GaAs superlattices

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Characterization of textured polycrystalline diamond by electron spin resonance spectroscopy

C. F. O. Graeff; C. E. Nebel; M. Stutzmann; A. Flöter; R. Zachai

J. Appl. Phys. 81, 234–237 (1997) https://doi.org/10.1063/1.363987

Abstract

View articletitled, Characterization of textured polycrystalline diamond by electron spin resonance spectroscopy

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Breakup and grain growth in thin-film array

A. J. Vilenkin; R. Kris; A. Brokman

J. Appl. Phys. 81, 238–245 (1997) https://doi.org/10.1063/1.363988

Abstract

View articletitled, Breakup and grain growth in thin-film array

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Roughness effects on the thermal stability of thin films

George Palasantzas

J. Appl. Phys. 81, 246–250 (1997) https://doi.org/10.1063/1.363990

Abstract

View articletitled, Roughness effects on the thermal stability of thin films

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Detection statistics of deep levels in minority carrier transient spectroscopy

J. A. Davidson; J. H. Evans

J. Appl. Phys. 81, 251–259 (1997) https://doi.org/10.1063/1.363991

Abstract

View articletitled, Detection statistics of deep levels in minority carrier transient spectroscopy

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Electrically active defects in as-implanted, deep buried layers in p-type silicon

P. K. Giri; S. Dhar; V. N. Kulkarni; Y. N. Mohapatra

J. Appl. Phys. 81, 260–263 (1997) https://doi.org/10.1063/1.363992

Abstract

View articletitled, Electrically active defects in as-implanted, deep buried layers in p-type silicon

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P and N compensation in diamond molecular orbital theory

Alfred B. Anderson; Lubomir N. Kostadinov

J. Appl. Phys. 81, 264–267 (1997) https://doi.org/10.1063/1.363993

Abstract

View articletitled, P and N compensation in diamond molecular orbital theory

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Generalized relationship between dark carrier distribution and photocarrier collection in solar cells

Martin A. Green

J. Appl. Phys. 81, 268–271 (1997) https://doi.org/10.1063/1.364108

Abstract

View articletitled, Generalized relationship between dark carrier distribution and photocarrier collection in solar cells

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Non-Gaussian noise in a colossal magnetoresistive film

H. T. Hardner; M. B. Weissman; M. Jaime; R. E. Treece,; P. C. Dorsey; J. S. Horwitz; D. B. Chrisey

J. Appl. Phys. 81, 272–275 (1997) https://doi.org/10.1063/1.363844

Abstract

View articletitled, Non-Gaussian noise in a colossal magnetoresistive film

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Electrical characterization of radio frequency sputtered hydrogenated amorphous silicon carbide films

W. K. Choi; L. J. Han; F. L. Loo

J. Appl. Phys. 81, 276–280 (1997) https://doi.org/10.1063/1.363845

Abstract

View articletitled, Electrical characterization of radio frequency sputtered hydrogenated amorphous silicon carbide films

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Depth measurement of doped semiconductors using the Hall technique

Gregory C. DeSalvo; David C. Look; Christopher A. Bozada; John L. Ebel

J. Appl. Phys. 81, 281–284 (1997) https://doi.org/10.1063/1.363846

Abstract

View articletitled, Depth measurement of doped semiconductors using the Hall technique

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Spatial structure in mode population induced by coherent pumping in a ballistic quantum channel

Ola Tageman; L. Y. Gorelik; R. I. Shekter; M. Jonson

J. Appl. Phys. 81, 285–291 (1997) https://doi.org/10.1063/1.364106

Abstract

View articletitled, Spatial structure in mode population induced by coherent pumping in a ballistic quantum channel

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Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer

J. Almeida; C. Coluzza; T. dell’Orto; G. Margaritondo; A. Terrasi; J. Ivanco

J. Appl. Phys. 81, 292–296 (1997) https://doi.org/10.1063/1.363847

Abstract

View articletitled, Au/GaAs(100) interface Schottky barrier modification by a silicon nitride intralayer

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Thermally stable PdIn ohmic contacts to n-GaAs via exchange mechanism

D. Y. Chen; Y. A. Chang; D. Swenson

J. Appl. Phys. 81, 297–300 (1997) https://doi.org/10.1063/1.363848

Abstract

View articletitled, Thermally stable PdIn ohmic contacts to n-GaAs via exchange mechanism

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Modeling of the microwave surface impedance of current biased YBa₂Cu₃O_7−δ thin films

Martin Löfgren

J. Appl. Phys. 81, 301–308 (1997) https://doi.org/10.1063/1.364109

Abstract

View articletitled, Modeling of the microwave surface impedance of current biased YBa2Cu3O7−δ thin films

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Fluxon dynamics in discrete Josephson transmission lines with stacked junctions

P. Caputo; M. Darula; A. V. Ustinov; H. Kohlstedt

J. Appl. Phys. 81, 309–314 (1997) https://doi.org/10.1063/1.364110

Abstract

View articletitled, Fluxon dynamics in discrete Josephson transmission lines with stacked junctions

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Parametric amplification of radiation by the intrinsic Josephson effect

Ch. Preis; M. Sardar; J. Keller

J. Appl. Phys. 81, 315–323 (1997) https://doi.org/10.1063/1.364112

Abstract

View articletitled, Parametric amplification of radiation by the intrinsic Josephson effect

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Critical temperature depth profiling and improvement of YBa₂Cu₃O₇ weak links produced by ion modification

S. S. Tinchev

J. Appl. Phys. 81, 324–327 (1997) https://doi.org/10.1063/1.364113

Abstract

View articletitled, Critical temperature depth profiling and improvement of YBa2Cu3O7 weak links produced by ion modification

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Magnetic properties and microstructure studies of Sm–Fe magnetic thin films

H. Sun; T. Tomida; S. Hirosawa

J. Appl. Phys. 81, 328–334 (1997) https://doi.org/10.1063/1.364114

Abstract

View articletitled, Magnetic properties and microstructure studies of Sm–Fe magnetic thin films

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Magnetic properties of single domain ε-Fe₃N synthesized by borohydride reduction route

R. N. Panda; N. S. Gajbhiye

J. Appl. Phys. 81, 335–339 (1997) https://doi.org/10.1063/1.364115

Abstract

View articletitled, Magnetic properties of single domain ε-Fe3N synthesized by borohydride reduction route

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Texture and surface/interface topological effects on the exchange and coercive fields of NiFe/NiO bilayers

De-Hua Han; Jian-Gang Zhu; Jack H. Judy; John M. Sivertsen

J. Appl. Phys. 81, 340–343 (1997) https://doi.org/10.1063/1.364116

Abstract

View articletitled, Texture and surface/interface topological effects on the exchange and coercive fields of NiFe/NiO bilayers

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Crystal structure and magnetic properties of Fe (111) singe crystal films

Y. Endo; S. Okamoto; O. Kitakami; Y. Shimada

J. Appl. Phys. 81, 344–349 (1997) https://doi.org/10.1063/1.364117

Abstract

View articletitled, Crystal structure and magnetic properties of Fe (111) singe crystal films

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Ferromagnetic resonance and eddy currents in high-permeable thin films

E. van de Riet; F. Roozeboom

J. Appl. Phys. 81, 350–354 (1997) https://doi.org/10.1063/1.364118

Abstract

View articletitled, Ferromagnetic resonance and eddy currents in high-permeable thin films

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A polarized Raman study of the relaxor and ferroelectric states of La-modified lead zirconate titanate ceramics

M. El Marssi; R. Farhi; D. Viehland

J. Appl. Phys. 81, 355–360 (1997) https://doi.org/10.1063/1.364119

Abstract

View articletitled, A polarized Raman study of the relaxor and ferroelectric states of La-modified lead zirconate titanate ceramics

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Alternating and direct current field effects on the dielectric response of La-modified lead zirconate titanate

Qi Tan; Dwight Viehland

J. Appl. Phys. 81, 361–368 (1997) https://doi.org/10.1063/1.364120

Abstract

View articletitled, Alternating and direct current field effects on the dielectric response of La-modified lead zirconate titanate

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Application of the second harmonic generation microscope to nondestructive observation of periodically poled ferroelectric domains in quasi-phase-matched wavelength converters

Sunao Kurimura; Yoshiaki Uesu

J. Appl. Phys. 81, 369–375 (1997) https://doi.org/10.1063/1.364121

Abstract

View articletitled, Application of the second harmonic generation microscope to nondestructive observation of periodically poled ferroelectric domains in quasi-phase-matched wavelength converters

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The mechanism of abnormal grain growth in Sr_0.6Ba_0.4Nb₂O₆ ceramics

Han-Young Lee; R. Freer

J. Appl. Phys. 81, 376–382 (1997) https://doi.org/10.1063/1.364122

Abstract

View articletitled, The mechanism of abnormal grain growth in Sr0.6Ba0.4Nb2O6 ceramics

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Influence of a surface film on the particles on the electrorheological response

C. W. Wu; H. Conrad

J. Appl. Phys. 81, 383–389 (1997) https://doi.org/10.1063/1.364123

Abstract

View articletitled, Influence of a surface film on the particles on the electrorheological response

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Characterization of mixed strain quantum well structures

Kushant Uppal; Denis Tishinin; P. D. Dapkus

J. Appl. Phys. 81, 390–393 (1997) https://doi.org/10.1063/1.364069

Abstract

View articletitled, Characterization of mixed strain quantum well structures

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Investigation of photoluminescence and photocurrent in InGaAsP/InP strained multiple quantum well heterostructures

O. Y. Raisky; W. B. Wang; R. R. Alfano; C. L. Reynolds, Jr.; V. Swaminathan

J. Appl. Phys. 81, 394–399 (1997) https://doi.org/10.1063/1.364070

Abstract

View articletitled, Investigation of photoluminescence and photocurrent in InGaAsP/InP strained multiple quantum well heterostructures

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Temperature dependence of quantized states in an In_0.86Ga_0.14As_0.3P_0.7/InP quantum well heterostructure

C. F. Li; D. Y. Lin; Y. S. Huang; Y. F. Chen; K. K. Tiong

J. Appl. Phys. 81, 400–405 (1997) https://doi.org/10.1063/1.364071

Abstract

View articletitled, Temperature dependence of quantized states in an In0.86Ga0.14As0.3P0.7/InP quantum well heterostructure

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Quantitative assessment of the effects of carrier screening on the average electric field in a GaAs-based p–i–n nanostructure under subpicosecond laser excitation

K. T. Tsen; R. P. Joshi; A. Salvador; A. Botcharev; H. Morkoc

J. Appl. Phys. 81, 406–408 (1997) https://doi.org/10.1063/1.364072

Abstract

View articletitled, Quantitative assessment of the effects of carrier screening on the average electric field in a GaAs-based p–i–n nanostructure under subpicosecond laser excitation

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The effect of strain on the dielectric constants of strained In_0.7Ga_0.3As_yP_1−y films

Hye-Rim Kim; Jeong Soo Kim; Hyung Mun Kim; Heung Ro Choo; Hong Man Kim; Kwang Eui Pyun

J. Appl. Phys. 81, 409–416 (1997) https://doi.org/10.1063/1.364073

Abstract

View articletitled, The effect of strain on the dielectric constants of strained In0.7Ga0.3AsyP1−y films

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Biaxial strain dependence of exciton resonance energies in wurtzite GaN

Amane Shikanai; Takashi Azuhata; Takayuki Sota; Shigefusa Chichibu; Akito Kuramata; Kazuhiko Horino; Shuji Nakamura

J. Appl. Phys. 81, 417–424 (1997) https://doi.org/10.1063/1.364074

Abstract

View articletitled, Biaxial strain dependence of exciton resonance energies in wurtzite GaN

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Temperature dependence of ZnGeP₂ birefringence using polarized light interference

D. W. Fischer; M. C. Ohmer

J. Appl. Phys. 81, 425–431 (1997) https://doi.org/10.1063/1.364075

Abstract

View articletitled, Temperature dependence of ZnGeP2 birefringence using polarized light interference

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Optical properties of degenerately doped silicon films for applications in thermophotovoltaic systems

H. Ehsani; I. Bhat; J. Borrego; R. Gutmann; E. Brown; R. Dziendziel; M. Freeman; N. Choudhury

J. Appl. Phys. 81, 432–439 (1997) https://doi.org/10.1063/1.364076

Abstract

View articletitled, Optical properties of degenerately doped silicon films for applications in thermophotovoltaic systems

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Effect of oxidation treatments on photoluminescence excitation of porous silicon

N. Rigakis; J. Hilliard; L. Abu Hassan; J. M. Hetrick; D. Andsager; M. H. Nayfeh

J. Appl. Phys. 81, 440–444 (1997) https://doi.org/10.1063/1.364077

Abstract

View articletitled, Effect of oxidation treatments on photoluminescence excitation of porous silicon

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ZnS:Tm grown by metalorganic chemical vapor deposition with Cl codoping

Akira Kato; Masayuki Katayama; Atsushi Mizutani; Nobuei Ito; Tadashi Hattori

J. Appl. Phys. 81, 445–450 (1997) https://doi.org/10.1063/1.364078

Abstract

View articletitled, ZnS:Tm grown by metalorganic chemical vapor deposition with Cl codoping

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Optical properties of ZnTe/ ${Zn}_{1−x}$ ${Mg}_{x}$ ${Se}_{y}$ ${Te}_{1−y}$ quantum wells and epilayers grown by molecular beam epitaxy

K. Watanabe; M. Th. Litz; M. Korn; W. Ossau; A. Waag; G. Landwehr; U. Schüssler

J. Appl. Phys. 81, 451–455 (1997) https://doi.org/10.1063/1.364079

Abstract

View articletitled, Optical properties of ZnTe/<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>1−x</mtext></mrow></msub></math><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mi>x</mi></mrow></msub></math><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Se</mi><mrow><mi>y</mi></mrow></msub></math><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Te</mi><mrow><mtext>1−y</mtext></mrow></msub></math> quantum wells and epilayers grown by molecular beam epitaxy

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Fabrication and optical properties of ZnSe/ZnMgSSe multiple quantum wells grown by compound-source molecular beam epitaxy

Shigeo Hayashi; Yoshio Manabe; Ichiro Tanahashi; Takao Tohda

J. Appl. Phys. 81, 456–460 (1997) https://doi.org/10.1063/1.364080

Abstract

View articletitled, Fabrication and optical properties of ZnSe/ZnMgSSe multiple quantum wells grown by compound-source molecular beam epitaxy

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Energy distributions of Zr/O/W Schottky electron emission

H. S. Kim; M. L. Yu; M. G. R. Thomson; E. Kratschmer; T. H. P. Chang

J. Appl. Phys. 81, 461–465 (1997) https://doi.org/10.1063/1.364081

Abstract

View articletitled, Energy distributions of Zr/O/W Schottky electron emission

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Photoemission through thin dielectric coating films

A. Buzulutskov; A. Breskin; R. Chechik

J. Appl. Phys. 81, 466–479 (1997) https://doi.org/10.1063/1.364082

Abstract

View articletitled, Photoemission through thin dielectric coating films

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Imaging and modeling of pulse laser induced evaporation of metal films

R. Niedrig; O. Bostanjoglo

J. Appl. Phys. 81, 480–485 (1997) https://doi.org/10.1063/1.364083

Abstract

View articletitled, Imaging and modeling of pulse laser induced evaporation of metal films

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Deposition of diamond films on SiO₂ surfaces using a high power microwave enhanced chemical vapor deposition process

Jau-Sung Lee; Kuo-Shung Liu; I-Nan Lin

J. Appl. Phys. 81, 486–491 (1997) https://doi.org/10.1063/1.364104

Abstract

View articletitled, Deposition of diamond films on SiO2 surfaces using a high power microwave enhanced chemical vapor deposition process

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Microstructure, heat treatment, and oxidation study of porous silicon formed on moderately doped p-type silicon

D. W. Zheng; Y. P. Huang; Z. J. He; A. Z. Li; T. A. Tang; R. Kwor; Q. Cui; X. J. Zhang

J. Appl. Phys. 81, 492–496 (1997) https://doi.org/10.1063/1.364107

Abstract

View articletitled, Microstructure, heat treatment, and oxidation study of porous silicon formed on moderately doped p-type silicon

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Optical characterization of InGaAs–GaAs multiple quantum wells using variable angle spectroscopic ellipsometry for designing tunable modulators

S. K. Cheung; H. Wang; W. Huang; F. Jain

J. Appl. Phys. 81, 497–501 (1997) https://doi.org/10.1063/1.364125

Abstract

View articletitled, Optical characterization of InGaAs–GaAs multiple quantum wells using variable angle spectroscopic ellipsometry for designing tunable modulators

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Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors

A. K. Fung; L. Cong; J. D. Albrecht; M. I. Nathan; P. P. Ruden; H. Shtrikman

J. Appl. Phys. 81, 502–505 (1997) https://doi.org/10.1063/1.364126

Abstract

View articletitled, Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors

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Transferred charge analysis of evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

R. Myers; J. F. Wager

J. Appl. Phys. 81, 506–510 (1997) https://doi.org/10.1063/1.364127

Abstract

View articletitled, Transferred charge analysis of evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

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Threshold behavior in backgating in GaAs metal–semiconductor field-effect transistors: Induced by limitation of channel–substrate junction to leakage current

Y. H. Chen; Z. G. Wang; J. J. Qian; M. F. Sun

J. Appl. Phys. 81, 511–515 (1997) https://doi.org/10.1063/1.364129

Abstract

View articletitled, Threshold behavior in backgating in GaAs metal–semiconductor field-effect transistors: Induced by limitation of channel–substrate junction to leakage current

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Si₃N₄/Si/In_0.05Ga_0.95As/n–GaAs metal–insulator–semiconductor devices

Dae-Gyu Park; Ding Li; Meng Tao; Zhifang Fan; Andrei E. Botchkarev; S. Noor Mohammad; Hadis Morkoç

J. Appl. Phys. 81, 516–523 (1997) https://doi.org/10.1063/1.364130

Abstract

View articletitled, Si3N4/Si/In0.05Ga0.95As/n–GaAs metal–insulator–semiconductor devices

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Neutron transmutation doping as an experimental probe for Cu_Zn in ZnSe

E. D. Wheeler; Jack L. Boone; J. W. Farmer; H. R. Chandrasekhar

J. Appl. Phys. 81, 524–526 (1997) https://doi.org/10.1063/1.364131

Abstract

View articletitled, Neutron transmutation doping as an experimental probe for CuZn in ZnSe

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Effects of deviatoric stress and radial strain on the shock-induced diffusionless transformation in boron nitride

T. Sekine; T. Kobayashi; H. Nameki

J. Appl. Phys. 81, 527–529 (1997) https://doi.org/10.1063/1.364132

Abstract

View articletitled, Effects of deviatoric stress and radial strain on the shock-induced diffusionless transformation in boron nitride

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The effect of the surface Fermi level pinning on the properties of δ-doped systems

J. F. Sampaio; S. L. S. Freire; E. S. Alves

J. Appl. Phys. 81, 530–532 (1997) https://doi.org/10.1063/1.364092

Abstract

View articletitled, The effect of the surface Fermi level pinning on the properties of δ-doped systems

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Enhanced flux pinning from CuO inclusions in Bi₂Sr₂CaCu₂O_y crystals

X. L. Wang; J. Horvat; H. K. Liu; S. X. Dou

J. Appl. Phys. 81, 533–535 (1997) https://doi.org/10.1063/1.364093

Abstract

View articletitled, Enhanced flux pinning from CuO inclusions in Bi2Sr2CaCu2Oy crystals

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Optical measurement of the ambipolar diffusion length in a ZnCdSe–ZnSe single quantum well

F. P. Logue; D. T. Fewer; S. J. Hewlett; J. F. Heffernan; C. Jordan; P. Rees; J. F. Donegan; E. M. McCabe; J. Hegarty; S. Taniguchi; T. Hino; K. Nakano; A. Ishibashi

J. Appl. Phys. 81, 536–538 (1997) https://doi.org/10.1063/1.364094

Abstract

View articletitled, Optical measurement of the ambipolar diffusion length in a ZnCdSe–ZnSe single quantum well

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Low fluence laser sputtering of gold at 532 nm

Jeffrey W. Elam; Donald H. Levy

J. Appl. Phys. 81, 539–541 (1997) https://doi.org/10.1063/1.364095

Abstract

View articletitled, Low fluence laser sputtering of gold at 532 nm

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