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A universal optimum work rate potential for continuous endoreversible Carnot heat engine cycles
J. Appl. Phys. 80, 3619–3621 (1996)
https://doi.org/10.1063/1.363375
Studies of vibrating atomic force microscope cantilevers in liquid
J. Appl. Phys. 80, 3622–3627 (1996)
https://doi.org/10.1063/1.363308
Performance study of polycapillary optics for hard x rays
J. Appl. Phys. 80, 3628–3638 (1996)
https://doi.org/10.1063/1.363309
Mass, charge, and energy separation by selective acceleration with a traveling potential hill
J. Appl. Phys. 80, 3646–3655 (1996)
https://doi.org/10.1063/1.363311
Characterization of laser‐driven shocks of high intensity using piezoelectric polymers
J. Appl. Phys. 80, 3656–3661 (1996)
https://doi.org/10.1063/1.363312
Large electro‐optic modulation effect observed in ion‐exchanged KTiOPO4 waveguides
J. Appl. Phys. 80, 3662–3667 (1996)
https://doi.org/10.1063/1.363313
Electronic structure of second harmonic generation crystal Li3VO4
J. Appl. Phys. 80, 3668–3673 (1996)
https://doi.org/10.1063/1.363314
Diffractive phase elements by electron‐beam exposure of thin As2S3 films
J. Appl. Phys. 80, 3683–3686 (1996)
https://doi.org/10.1063/1.363316
Concentration of atomic hydrogen in the ground state in a CH4‐H2 microwave plasma
J. Appl. Phys. 80, 3694–3698 (1996)
https://doi.org/10.1063/1.363318
Self‐consistent kinetic modeling of low‐pressure inductively coupled radio‐frequency discharges
J. Appl. Phys. 80, 3699–3704 (1996)
https://doi.org/10.1063/1.363319
Cl2/Ar and CH4/H2/Ar dry etching of III–V nitrides
J. Appl. Phys. 80, 3705–3709 (1996)
https://doi.org/10.1063/1.363320
Microwave plasma characteristics during bias‐enhanced nucleation of diamond: An optical emission spectroscopic study
J. Appl. Phys. 80, 3710–3716 (1996)
https://doi.org/10.1063/1.363321
Dose‐rate effects in GaAs investigated by discrete pulsed implantation using a focused ion beam
J. Appl. Phys. 80, 3727–3733 (1996)
https://doi.org/10.1063/1.363323
The active dopant concentration in ion implanted indium tin oxide thin films
J. Appl. Phys. 80, 3734–3738 (1996)
https://doi.org/10.1063/1.363324
Phosphorus‐related donors in 6H‐SiC generated by ion implantation
J. Appl. Phys. 80, 3739–3743 (1996)
https://doi.org/10.1063/1.363325
Shock‐induced transformations of carbyne
J. Appl. Phys. 80, 3757–3759 (1996)
https://doi.org/10.1063/1.363327
Nanoindentation investigation of the Young’s modulus of porous silicon
J. Appl. Phys. 80, 3772–3776 (1996)
https://doi.org/10.1063/1.363305
An integral equation approach to electromigration under arbitrary time‐dependent stress
J. Appl. Phys. 80, 3792–3797 (1996)
https://doi.org/10.1063/1.363331
Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers
J. Appl. Phys. 80, 3798–3803 (1996)
https://doi.org/10.1063/1.363332
Structural characterization of ordered SiGe films grown on Ge(100) and Si(100) substrates
J. Appl. Phys. 80, 3804–3807 (1996)
https://doi.org/10.1063/1.363333
Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers
J. Appl. Phys. 80, 3808–3816 (1996)
https://doi.org/10.1063/1.363334
Electrical behavior of implanted carbon impurities in fluorine co‐implanted GaAs
J. Appl. Phys. 80, 3834–3839 (1996)
https://doi.org/10.1063/1.363337
Majority and minority electron and hole mobilities in heavily doped gallium aluminum arsenide
J. Appl. Phys. 80, 3844–3853 (1996)
https://doi.org/10.1063/1.363339
Small‐signal capacitance and conductance of biased a‐Si structures
J. Appl. Phys. 80, 3854–3859 (1996)
https://doi.org/10.1063/1.363340
Electrical resistivity of TiB2 at elevated pressures and temperatures
J. Appl. Phys. 80, 3860–3862 (1996)
https://doi.org/10.1063/1.363341
Polar optical oscillations in coupled quantum wells: The electron‐phonon interaction and scattering
J. Appl. Phys. 80, 3863–3875 (1996)
https://doi.org/10.1063/1.363342
Analysis of magnetic field dependent Hall data in narrow bandgap Hg1−xCdxTe grown by molecular beam epitaxy
J. Appl. Phys. 80, 3881–3892 (1996)
https://doi.org/10.1063/1.363344
Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact to n‐type GaAs
J. Appl. Phys. 80, 3904–3909 (1996)
https://doi.org/10.1063/1.363347
Transmission electron microscopy study of rapid thermally annealed Pd/Ge contacts on In0.53Ga0.47As
J. Appl. Phys. 80, 3910–3914 (1996)
https://doi.org/10.1063/1.363348
Microstructure and magnetism in FeTaN films deposited in the nanocrystalline state
J. Appl. Phys. 80, 3941–3956 (1996)
https://doi.org/10.1063/1.363352
Butterfly curves and critical modes for second‐order spin‐wave instability processes in yttrium iron garnet films
J. Appl. Phys. 80, 3962–3971 (1996)
https://doi.org/10.1063/1.363354
Compositional evolution and magnetic properties of nanocrystalline Fe81.5Cu0.5Mo0.5P12C3Si2.5
J. Appl. Phys. 80, 3972–3976 (1996)
https://doi.org/10.1063/1.363355
Polarization of thick polyvinylidene fluoride/trifluoroethylene copolymer films
J. Appl. Phys. 80, 3982–3991 (1996)
https://doi.org/10.1063/1.363356
A dielectric mixing law for porous ceramics based on fractal boundaries
J. P. Calame; A. Birman; Y. Carmel; D. Gershon; B. Levush; A. A. Sorokin; V. E. Semenov; D. Dadon; L. P. Martin; M. Rosen
J. Appl. Phys. 80, 3992–4000 (1996)
https://doi.org/10.1063/1.363357
The effect of external field symmetry on the antiferroelectric‐ferroelectric phase transformation
J. Appl. Phys. 80, 4001–4005 (1996)
https://doi.org/10.1063/1.363358
Optical anisotropy of SiGe superlattices
J. Appl. Phys. 80, 4012–4018 (1996)
https://doi.org/10.1063/1.363360
Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots
J. Appl. Phys. 80, 4019–4026 (1996)
https://doi.org/10.1063/1.363361
Direct measurement of the polarization‐dependent absorption and saturation in an InGaAs/InGaAsP single quantum well
J. Appl. Phys. 80, 4027–4032 (1996)
https://doi.org/10.1063/1.363362
Structural and optical characterization of InP/GaxIn1−xAsyP1−y quantum wells and interfacial layers
J. Appl. Phys. 80, 4033–4039 (1996)
https://doi.org/10.1063/1.363363
Near band edge absorption spectra of narrow‐gap III–V semiconductor alloys
J. Appl. Phys. 80, 4045–4048 (1996)
https://doi.org/10.1063/1.363364
Hole mass determination in ZnSe by observation of standing polariton waves
J. Appl. Phys. 80, 4049–4051 (1996)
https://doi.org/10.1063/1.363365
Thermal stability of sulfur‐treated InP investigated by photoluminescence
J. Appl. Phys. 80, 4052–4057 (1996)
https://doi.org/10.1063/1.363366
Raman scattering by longitudinal acoustic phonons in metallic W/Ti Fibonacci superlattice
J. Appl. Phys. 80, 4063–4066 (1996)
https://doi.org/10.1063/1.363368
Enhancement of light emitting diodes based on self‐assembled heterostructures of poly(p‐phenylene vinylene)
J. Appl. Phys. 80, 4067–4071 (1996)
https://doi.org/10.1063/1.363369
Pressure generation and measurement in the rapid vaporization of water on a pulsed‐laser‐heated surface
J. Appl. Phys. 80, 4072–4081 (1996)
https://doi.org/10.1063/1.363370
Low‐frequency perturbation theory in eddy‐current non‐destructive evaluation
J. Appl. Phys. 80, 4090–4100 (1996)
https://doi.org/10.1063/1.363280
Adhesion in growth of defect‐free silicon over silicon oxide
J. Appl. Phys. 80, 4101–4107 (1996)
https://doi.org/10.1063/1.363371
Growth of high quality Al0.22Ga0.78As layers on Si substrates by metalorganic chemical vapor deposition
J. Appl. Phys. 80, 4112–4115 (1996)
https://doi.org/10.1063/1.363282
Characterization of the effect of growth conditions on a‐SiC:H films
J. Appl. Phys. 80, 4116–4123 (1996)
https://doi.org/10.1063/1.363283
Low temperature catalytic formation of Si‐based metal–oxide–semiconductor structure
J. Appl. Phys. 80, 4124–4128 (1996)
https://doi.org/10.1063/1.363284
Photoelectron spectroscopy studies of Li1+xMn2−xO4 for Li ion battery applications
J. Appl. Phys. 80, 4141–4152 (1996)
https://doi.org/10.1063/1.363287
Probing solvent dynamics in concentrated polymer films with a high‐frequency shear mode quartz resonator
J. Appl. Phys. 80, 4153–4163 (1996)
https://doi.org/10.1063/1.363288
Indented barrier resonant tunneling rectifiers
J. Appl. Phys. 80, 4174–4176 (1996)
https://doi.org/10.1063/1.363290
Nanoneedle formation on silicon (111) surface using a scanning tunneling microscope tip
J. Appl. Phys. 80, 4182–4188 (1996)
https://doi.org/10.1063/1.363292
440 nm light generation by frequency tripling in germanosilicate glasses
J. Appl. Phys. 80, 4196–4198 (1996)
https://doi.org/10.1063/1.363293
Annealing behavior and atomic composition of substitutional carbon–oxygen complexes in silicon crystals
J. Appl. Phys. 80, 4199–4201 (1996)
https://doi.org/10.1063/1.363294
Structures of Al/Si(100) surfaces as determined by scanning tunneling microscopy
J. Appl. Phys. 80, 4205–4207 (1996)
https://doi.org/10.1063/1.363296
Efficient method for calculating the transmission coefficient of two‐dimensional quantum wire structures
J. Appl. Phys. 80, 4208–4210 (1996)
https://doi.org/10.1063/1.363297
Group‐VI impurity‐related DX centers in In0.18 Ga0.82As0.28 P0.72
J. Appl. Phys. 80, 4211–4213 (1996)
https://doi.org/10.1063/1.363376
Photoconductive sampling of subpicosecond pulses using mutual inductive coupling in coplanar transmission lines
J. Appl. Phys. 80, 4214–4216 (1996)
https://doi.org/10.1063/1.363298
Giant magnetoresistance in Co/Cu multilayers fabricated by focused ion‐beam direct deposition
J. Appl. Phys. 80, 4217–4219 (1996)
https://doi.org/10.1063/1.363299
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.