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Optimal control of force microscope cantilevers. I. Controller design
J. Appl. Phys. 80, 1951–1958 (1996)
https://doi.org/10.1063/1.363085
Optimal control of force microscope cantilevers. II. Magnetic coupling implementation
J. Appl. Phys. 80, 1959–1964 (1996)
https://doi.org/10.1063/1.363086
Intense ultraviolet and blue upconversion fluorescence in Tm3+‐doped fluoroindate glasses
J. Appl. Phys. 80, 1965–1969 (1996)
https://doi.org/10.1063/1.363087
Simulation of optically pumped mid‐infrared intersubband semiconductor laser structures
J. Appl. Phys. 80, 1970–1978 (1996)
https://doi.org/10.1063/1.363088
Degenerate two‐photon absorption in lead borotellurite glasses at 532 nm
J. Appl. Phys. 80, 1979–1984 (1996)
https://doi.org/10.1063/1.363089
Four‐domain twisted nematic liquid crystal display fabricated by reverse rubbed polyimide process
J. Appl. Phys. 80, 1985–1990 (1996)
https://doi.org/10.1063/1.363090
Electro‐optical properties of polymer dispersed liquid crystal materials
J. Appl. Phys. 80, 1991–1995 (1996)
https://doi.org/10.1063/1.363091
Laser heating of a cavity versus a plane surface for metal targets utilizing photothermal deflection measurements
J. Appl. Phys. 80, 1996–2002 (1996)
https://doi.org/10.1063/1.363092
Analysis of ac temperature wave during the measurement of thermal diffusivity of two‐layered platelike samples
J. Appl. Phys. 80, 2019–2026 (1996)
https://doi.org/10.1063/1.363095
Application of the principle of minimum entropy production to shock wave reflections. I. Steady flows
J. Appl. Phys. 80, 2027–2037 (1996)
https://doi.org/10.1063/1.363096
Application of the principle of minimum entropy production to shock wave reflections. II. Pseudosteady flows
J. Appl. Phys. 80, 2038–2048 (1996)
https://doi.org/10.1063/1.363097
The behavior of small bubbles generated by electrical current impulses over a wide range of applied pressures
J. Appl. Phys. 80, 2049–2059 (1996)
https://doi.org/10.1063/1.363098
Determination of atomic hydrogen densities in gases by a deuterium based Lyman‐alpha absorption method
J. Appl. Phys. 80, 2060–2068 (1996)
https://doi.org/10.1063/1.363099
Particle agglomeration study in rf silane plasmas: In situ study by polarization‐sensitive laser light scattering
C. Courteille; Ch. Hollenstein; J.‐L. Dorier; P. Gay; W. Schwarzenbach; A. A. Howling; E. Bertran; G. Viera; R. Martins; A. Macarico
J. Appl. Phys. 80, 2069–2078 (1996)
https://doi.org/10.1063/1.363118
Three‐dimensional, particle‐in‐cell simulations of applied‐B ion diodes on the particle beam fusion accelerator II
J. Appl. Phys. 80, 2079–2093 (1996)
https://doi.org/10.1063/1.363100
Vacuum ultraviolet radiative properties of formed‐ferrite discharge with prepulse initiation
J. Appl. Phys. 80, 2094–2096 (1996)
https://doi.org/10.1063/1.363116
Formation of extended defects in silicon by high energy implantation of B and P
J. Appl. Phys. 80, 2105–2112 (1996)
https://doi.org/10.1063/1.363103
Threading dislocations in silicon layer produced by separation by implanted oxygen process
J. Appl. Phys. 80, 2113–2120 (1996)
https://doi.org/10.1063/1.363104
Enhanced x‐ray optical contrast of Mo/Si multilayers by H implantation of Si
J. Appl. Phys. 80, 2121–2126 (1996)
https://doi.org/10.1063/1.363105
MeV P ion implantation damage and rapid thermal annealing effects in Fe‐doped InP using Raman scattering
J. Appl. Phys. 80, 2127–2131 (1996)
https://doi.org/10.1063/1.363106
n‐type ion implantation doping of AlxGa1−xAs (0⩽x⩽0.7)
J. Appl. Phys. 80, 2132–2137 (1996)
https://doi.org/10.1063/1.363556
Li diffusion in Ti oxyfluoride films: Thermal activation energy and jump length derived from impedance spectroscopy
J. Appl. Phys. 80, 2169–2174 (1996)
https://doi.org/10.1063/1.363108
X‐ray absorption spectroscopic studies of sputter‐deposited LaNiO3 thin films on Si substrate
J. Appl. Phys. 80, 2175–2180 (1996)
https://doi.org/10.1063/1.363109
Diamond film quality: Effects of gas phase concentrations on the Raman spectra
J. Appl. Phys. 80, 2187–2194 (1996)
https://doi.org/10.1063/1.363111
Homoepitaxial growth of GaN using molecular beam epitaxy
A. Gassmann; T. Suski; N. Newman; C. Kisielowski; E. Jones; E. R. Weber; Z. Liliental‐Weber; M. D. Rubin; H. I. Helava; I. Grzegory; M. Bockowski; J. Jun; S. Porowski
J. Appl. Phys. 80, 2195–2198 (1996)
https://doi.org/10.1063/1.363112
Effect of annealing on the defect structure in a‐SiC:H films
J. Appl. Phys. 80, 2216–2223 (1996)
https://doi.org/10.1063/1.363049
Chemically functionalized surfaces from ultrathin block‐copolymer films
J. Appl. Phys. 80, 2224–2227 (1996)
https://doi.org/10.1063/1.363114
Ion beam mixing at the Fe2O3/Al2O3 interface
J. Appl. Phys. 80, 2228–2233 (1996)
https://doi.org/10.1063/1.363115
Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
J. Appl. Phys. 80, 2234–2252 (1996)
https://doi.org/10.1063/1.363052
Charge transport in silicon carbide: Atomic and microscopic effects
J. Appl. Phys. 80, 2260–2268 (1996)
https://doi.org/10.1063/1.363054
Wannier–Stark localization in strained barrier GaAs/InXAl1−XAs superlattices
J. Appl. Phys. 80, 2285–2290 (1996)
https://doi.org/10.1063/1.363057
Resonant tunneling of holes in double‐barrier structures in the presence of an in‐plane magnetic field
J. Appl. Phys. 80, 2291–2295 (1996)
https://doi.org/10.1063/1.363058
Si, Be, and C ion implantation in GaAs0.93P0.07
J. Appl. Phys. 80, 2296–2299 (1996)
https://doi.org/10.1063/1.363059
Transport properties of hydrogenated p‐GaInAs doped with carbon
J. Appl. Phys. 80, 2300–2304 (1996)
https://doi.org/10.1063/1.363060
Effective capture rates of carriers in amorphous hydrogenated silicon
J. Appl. Phys. 80, 2305–2310 (1996)
https://doi.org/10.1063/1.363061
Structure and magnetic properties of Fe1−xNix/Cu Invar superlattices
J. Appl. Phys. 80, 2327–2333 (1996)
https://doi.org/10.1063/1.363065
Influence of interface effects on the exciton magnetic‐polaron energies in quantum wells and superlattices
J. Appl. Phys. 80, 2339–2345 (1996)
https://doi.org/10.1063/1.363067
Dielectric properties of Ta2O5–SiO2 polycrystalline ceramics
J. Appl. Phys. 80, 2346–2348 (1996)
https://doi.org/10.1063/1.363068
Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy
J. Appl. Phys. 80, 2363–2366 (1996)
https://doi.org/10.1063/1.363070
Electrochromism in lithiated Sn oxide: Mössbauer spectroscopy data on valence state changes
J. Appl. Phys. 80, 2367–2371 (1996)
https://doi.org/10.1063/1.363071
Infrared reflectance of AlN–GaN short period superlattice films
J. Appl. Phys. 80, 2372–2377 (1996)
https://doi.org/10.1063/1.363072
Cathodoluminescence of AlN–GaN short period superlattices
M. F. MacMillan; L. L. Clemen; R. P. Devaty; W. J. Choyke; M. Asif Khan; J. N. Kuznia; S. Krishnankutty
J. Appl. Phys. 80, 2378–2382 (1996)
https://doi.org/10.1063/1.363726
Photoluminescence and Raman scattering studies of 2 MeV Yb+‐implanted InP as a function of etching depth
J. Appl. Phys. 80, 2383–2387 (1996)
https://doi.org/10.1063/1.363073
Light scattering in p‐type GaAs:Ge
J. Appl. Phys. 80, 2388–2395 (1996)
https://doi.org/10.1063/1.363074
Picosecond nonlinear spectroscopy of quantum‐size PbTe films
J. Appl. Phys. 80, 2396–2403 (1996)
https://doi.org/10.1063/1.363075
Carrier localization in porous silicon investigated by time‐resolved luminescence analysis
J. Appl. Phys. 80, 2404–2411 (1996)
https://doi.org/10.1063/1.363076
Infrared reflectance of thick p‐type porous SiC layers
J. Appl. Phys. 80, 2412–2419 (1996)
https://doi.org/10.1063/1.363046
Hole‐trapping sites and the mechanism of the photostimulated luminescence of the x‐ray storage phosphor RbI:Tl+
J. Appl. Phys. 80, 2430–2435 (1996)
https://doi.org/10.1063/1.363078
Photoluminescence studies of broadband excitation mechanisms for Dy3+ emission in Dy:As12Ge33Se55 glass
J. Appl. Phys. 80, 2436–2441 (1996)
https://doi.org/10.1063/1.363079
Two‐dimensional laser‐induced fluorescence imaging of a pulsed‐laser deposition process of YBa2Cu3O7−x
J. Appl. Phys. 80, 2458–2466 (1996)
https://doi.org/10.1063/1.363082
SiC formation at the interface of polyimide Langmuir–Blodgett film and silicon
Mingrong Ji; Jingsheng Zhu; Maosheng Ma; Jianxin Wu; Xianming Liu; Bangkun Jin; Beifang Yang; Pingsheng He; Yaozhong Ruan
J. Appl. Phys. 80, 2471–2474 (1996)
https://doi.org/10.1063/1.363047
Elastoplastic stress analysis of Nb3Sn superconducting magnet
J. Appl. Phys. 80, 2490–2500 (1996)
https://doi.org/10.1063/1.363031
Molecular beam deposited thin films of pentacene for organic field effect transistor applications
J. Appl. Phys. 80, 2501–2508 (1996)
https://doi.org/10.1063/1.363032
Frequency stability enhancement from carrier‐envelope resonance in a surface acoustic wave delay line oscillator
J. Appl. Phys. 80, 2509–2511 (1996)
https://doi.org/10.1063/1.363117
A simple method for calculating strain distributions in quantum‐wire structures
J. Appl. Phys. 80, 2515–2517 (1996)
https://doi.org/10.1063/1.363034
Scanning transmission electron beam induced conductivity investigation of a Si/Si1−xGex/Si heterostructure
J. Appl. Phys. 80, 2527–2529 (1996)
https://doi.org/10.1063/1.363038
Effects of external fields on the far‐infrared 1s→2p+ intradonor absorption spectra in quantum wells
J. Appl. Phys. 80, 2536–2538 (1996)
https://doi.org/10.1063/1.363041
1/f noise in magnetic Ni80Fe20 single layers and Ni80Fe20/Cu multilayers
J. Appl. Phys. 80, 2539–2541 (1996)
https://doi.org/10.1063/1.363042
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.