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A simple three‐dimensional free electron laser code
J. Appl. Phys. 80, 6589–6594 (1996)
https://doi.org/10.1063/1.363780
Intensity fluctuation of a pulsed planar microcavity laser
J. Appl. Phys. 80, 6595–6601 (1996)
https://doi.org/10.1063/1.363782
Population dynamics of the three‐micron emitting level of Er3+ in YAlO3
J. Appl. Phys. 80, 6610–6613 (1996)
https://doi.org/10.1063/1.363748
Beam propagation algorithms for frequency response of surface acoustic wave directional couplers
J. Appl. Phys. 80, 6614–6618 (1996)
https://doi.org/10.1063/1.363784
Boltzmann equation analysis of electron‐molecule collision cross sections in water vapor and ammonia
J. Appl. Phys. 80, 6619–6630 (1996)
https://doi.org/10.1063/1.363785
Theoretical and experimental investigation of leakage power in microwave transmit–receive switches
J. Appl. Phys. 80, 6631–6638 (1996)
https://doi.org/10.1063/1.363781
Electron spin resonance identification of a methyl associated organic radical in irradiated amorphous SiO2
J. Appl. Phys. 80, 6646–6650 (1996)
https://doi.org/10.1063/1.363787
Optical properties of LiNbO3 implanted with Ag ions
J. Appl. Phys. 80, 6651–6654 (1996)
https://doi.org/10.1063/1.363788
Argon incorporation and surface compositional changes in InP(100) due to low‐energy Ar+ ion bombardment
J. Appl. Phys. 80, 6655–6660 (1996)
https://doi.org/10.1063/1.363789
Impurity dependence of oxide defects in Czochralski silicon
J. Appl. Phys. 80, 6661–6665 (1996)
https://doi.org/10.1063/1.363790
Thermal properties of the nonlinear optical crystal zinc tris (thiourea) sulphate
P. Kerkoc; V. Venkataramanan; S. Lochran; R. T. Bailey; F. R. Cruickshank; D. Pugh; J. N. Sherwood; R. Moseley; A. E. Goeta; C. W. Lehmann; J. A. K. Howard
J. Appl. Phys. 80, 6666–6669 (1996)
https://doi.org/10.1063/1.363791
Bulk solidification and recalescence phenomena in amorphous Ge films upon picosecond pulsed laser irradiation
J. Appl. Phys. 80, 6677–6682 (1996)
https://doi.org/10.1063/1.363815
Unambiguous determination of crystal‐lattice strains in epitaxially grown SiGe/Si multilayers
J. Appl. Phys. 80, 6683–6688 (1996)
https://doi.org/10.1063/1.363793
A refined scheme for the reduction of threading dislocation densities in InxGa1−xAs/GaAs epitaxial layers
J. Appl. Phys. 80, 6706–6710 (1996)
https://doi.org/10.1063/1.363796
Substitutional versus interstitial carbon incorporation during pseudomorphic growth of Si1−yCy on Si(001)
J. Appl. Phys. 80, 6711–6715 (1996)
https://doi.org/10.1063/1.363797
Composition dependence of activation energy in solid phase epitaxial growth of Si1−xGex alloys
J. Appl. Phys. 80, 6716–6719 (1996)
https://doi.org/10.1063/1.363745
Heteroepitaxial structures of SrTiO3/TiN on Si(100) by in situ pulsed laser deposition
J. Appl. Phys. 80, 6720–6724 (1996)
https://doi.org/10.1063/1.363798
Nanoindentation studies of single‐crystal (001)‐, (011)‐, and (111)‐oriented TiN layers on MgO
J. Appl. Phys. 80, 6725–6733 (1996)
https://doi.org/10.1063/1.363799
The bonding of CAs acceptors in InxGa1−xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon
M. J. Ashwin; R. E. Pritchard; R. C. Newman; T. B. Joyce; T. J. Bullough; J. Wagner; C. Jeynes; S. J. Breuer; R. Jones; P. R. Briddon; S. Öberg
J. Appl. Phys. 80, 6754–6760 (1996)
https://doi.org/10.1063/1.363803
Enhancement of conduction‐band effective mass in III–V semiconductor alloys induced by chemical disorder
J. Appl. Phys. 80, 6761–6765 (1996)
https://doi.org/10.1063/1.363804
Calculation of electron and hole impact ionization coefficients in SiGe alloys
J. Appl. Phys. 80, 6773–6782 (1996)
https://doi.org/10.1063/1.363746
Space‐charge‐perturbed electrophoresis in nonpolar colloidal dispersions
J. Appl. Phys. 80, 6796–6803 (1996)
https://doi.org/10.1063/1.363807
Direct current resistivity studies of various polycrystalline Ni–Zn–Sc ferrites
J. Appl. Phys. 80, 6804–6808 (1996)
https://doi.org/10.1063/1.363808
Negative electron affinity observed in boron‐doped p‐type diamond films by scanning field emission spectroscopy
J. Appl. Phys. 80, 6809–6812 (1996)
https://doi.org/10.1063/1.363809
Compensation of shallow impurities in oxygen‐doped metalorganic vapor phase epitaxy grown GaAs
J. Appl. Phys. 80, 6819–6826 (1996)
https://doi.org/10.1063/1.363811
Ultrafast carrier dynamics at a metal‐semiconductor interface
J. Appl. Phys. 80, 6831–6838 (1996)
https://doi.org/10.1063/1.363749
Capacitance and conductance of semiconductor heterojunctions with continuous energy distribution of interface states
J. Appl. Phys. 80, 6839–6848 (1996)
https://doi.org/10.1063/1.363750
Correlation of buffer strain relaxation modes with transport properties of two‐dimensional electron gases
J. Appl. Phys. 80, 6849–6854 (1996)
https://doi.org/10.1063/1.363751
Temperature dependence of the energy gap of zinc‐blende CdSe and Cd1−xZnxSe epitaxial layers
J. Appl. Phys. 80, 6861–6863 (1996)
https://doi.org/10.1063/1.363753
Strain effect on electronic and optical properties of GaN/AlGaN quantum‐well lasers
J. Appl. Phys. 80, 6868–6874 (1996)
https://doi.org/10.1063/1.363755
Oxidation state and superconducting properties of Y1−xPrxSr2Cu2.85Re0.15O7+δ
M. Murugesan; P. Selvam; M. Sharon; L. C. Gupta; R. Pinto; M. S. R. Rao; C. S. Gopinath; S. Subramanian
J. Appl. Phys. 80, 6884–6887 (1996)
https://doi.org/10.1063/1.363758
Colossal magnetoresistance in Sm1−xSrxMnO3 films
J. Appl. Phys. 80, 6894–6897 (1996)
https://doi.org/10.1063/1.363759
Structure and magnetic properties of SmMn2(Ge1−xSix)2
Yin‐gang Wang; Fuming Yang; N. Tang; Jifan Hu; Kaiwen Zhou; Changpin Chen; Qidong Wang; F. R. de Boer
J. Appl. Phys. 80, 6898–6902 (1996)
https://doi.org/10.1063/1.363760
Magnetic interaction between iron‐oxide clusters precipitated in silicate glasses
J. Appl. Phys. 80, 6906–6910 (1996)
https://doi.org/10.1063/1.363762
Magnetoelastic and pressure effects at the antiferro–ferromagnetic transition in Hf1−xTaxFe2−y alloys
J. Appl. Phys. 80, 6911–6914 (1996)
https://doi.org/10.1063/1.363763
Evolution of coercivity during the early stages of Fe80B20 crystallization
J. Appl. Phys. 80, 6920–6924 (1996)
https://doi.org/10.1063/1.363765
Photoacoustic spectroscopy of diluted magnetic semiconductors
J. Appl. Phys. 80, 6925–6930 (1996)
https://doi.org/10.1063/1.363766
Sensitivity and spatial resolution for electron‐spin‐resonance detection by magnetic resonance force microscopy
J. Appl. Phys. 80, 6931–6938 (1996)
https://doi.org/10.1063/1.363767
Physics and applications of organic microcavity light emitting diodes
J. Appl. Phys. 80, 6954–6964 (1996)
https://doi.org/10.1063/1.363768
Time‐resolved carrier recombination dynamics of 1.3–1.8 μm broadband light emitting diode structures
J. Appl. Phys. 80, 6965–6971 (1996)
https://doi.org/10.1063/1.363769
Cathodoluminescence image of defects and luminescence centers in ZnS/GaAs(100)
J. Appl. Phys. 80, 6972–6979 (1996)
https://doi.org/10.1063/1.363770
Pumping‐beam‐induced photovoltaic effect on the photoreflectance of a δ‐doped GaAs film
J. Appl. Phys. 80, 6980–6983 (1996)
https://doi.org/10.1063/1.363771
Study of interface stresses in heterostructures using infrared piezobirefringence
J. Appl. Phys. 80, 6984–6990 (1996)
https://doi.org/10.1063/1.363772
Optical properties of nanoscale, one‐dimensional silicon grating structures
J. Appl. Phys. 80, 6997–7008 (1996)
https://doi.org/10.1063/1.363774
Porous silicon photoluminescence: Implications from in situ studies
J. Appl. Phys. 80, 7009–7017 (1996)
https://doi.org/10.1063/1.363813
Picosecond absorption spectroscopy of surface modified copper sulfide nanocrystals in polymeric film
J. Appl. Phys. 80, 7028–7035 (1996)
https://doi.org/10.1063/1.363814
Local Ce environments and their effects on optical properties of SrS phosphors
W. L. Warren; K. Vanheusden; C. H. Seager; D. R. Tallant; J. A. Tuchman; S. D. Silliman; D. T. Brower
J. Appl. Phys. 80, 7036–7040 (1996)
https://doi.org/10.1063/1.363776
Influence of the laser wavelength on the microstructure of laser ablated Ba0.5Sr0.5TiO3 films
J. Appl. Phys. 80, 7046–7051 (1996)
https://doi.org/10.1063/1.363778
Controllable laser‐induced periodic structures at silicon–dioxide/silicon interface by excimer laser irradiation
J. Appl. Phys. 80, 7052–7056 (1996)
https://doi.org/10.1063/1.363779
The role of defects in the rear side laser ablation of MgO at 308 nm
J. Appl. Phys. 80, 7057–7064 (1996)
https://doi.org/10.1063/1.363716
Effect of tribological wear on ultraviolet laser interactions with single crystal NaNO3 and CaCO3
J. Appl. Phys. 80, 7065–7072 (1996)
https://doi.org/10.1063/1.363717
Growth of metal oxide thin films by laser‐induced metalorganic chemical vapor deposition
J. Appl. Phys. 80, 7073–7083 (1996)
https://doi.org/10.1063/1.363718
Growth mechanism of YMnO3 film as a new candidate for nonvolatile memory devices
J. Appl. Phys. 80, 7084–7088 (1996)
https://doi.org/10.1063/1.363719
The role of an electric field applied during pulsed laser deposition of LiNbO3 and LiTaO3 on the film orientation
J. Appl. Phys. 80, 7089–7093 (1996)
https://doi.org/10.1063/1.363720
Liquid phase epitaxial growth of InGaAs on InP using rare‐earth‐treated melts
J. Appl. Phys. 80, 7094–7103 (1996)
https://doi.org/10.1063/1.363721
Characterization of the noise in secondary ion mass spectrometry depth profiles
J. Appl. Phys. 80, 7104–7107 (1996)
https://doi.org/10.1063/1.363722
Investigation of semiconducting YBaCuO thin films: A new room temperature bolometer
J. Appl. Phys. 80, 7118–7123 (1996)
https://doi.org/10.1063/1.363724
Visible wavelength (6470 Å) GaxIn1−xP/GaAs0.66P0.34 quantum wire heterostructures
J. Appl. Phys. 80, 7124–7129 (1996)
https://doi.org/10.1063/1.363725
On‐chip radiation detection from stacked Josephson flux‐flow oscillators
J. Appl. Phys. 80, 7134–7137 (1996)
https://doi.org/10.1063/1.363734
Schottky‐barrier fluctuations in Pb1−xSnxSe infrared sensors
J. Appl. Phys. 80, 7138–7143 (1996)
https://doi.org/10.1063/1.363735
Red electroluminescence from a thin organometallic layer of europium
J. Appl. Phys. 80, 7144–7150 (1996)
https://doi.org/10.1063/1.363736
Voltage‐tuneable Bragg reflector based on the quantum confined Stark effect
J. Appl. Phys. 80, 7151–7153 (1996)
https://doi.org/10.1063/1.363816
A two‐dimensional moment equations‐based analysis of radio frequency capacitively coupled discharges
J. Appl. Phys. 80, 7154–7156 (1996)
https://doi.org/10.1063/1.363737
Nonequilibrium thermal noise in GaAs/GaAlAs superlattice miniband
J. Appl. Phys. 80, 7160–7162 (1996)
https://doi.org/10.1063/1.363739
Asymmetric secondary electron emission flux in ferroelectric KTiOPO4 crystal
J. Appl. Phys. 80, 7166–7168 (1996)
https://doi.org/10.1063/1.363741
Long period two‐dimensional gratings for 8–12 μm quantum well infrared photodetectors
J. Appl. Phys. 80, 7169–7171 (1996)
https://doi.org/10.1063/1.363742
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.