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Backscattering of an electromagnetic missile by a metal cylinder of degree higher than two
J. Appl. Phys. 80, 15–24 (1996)
https://doi.org/10.1063/1.362769
Optical response in two‐dimensional optical superlattices with Kerr nonlinearity
J. Appl. Phys. 80, 25–29 (1996)
https://doi.org/10.1063/1.362782
Adhesive contact of cylindrical lens and a flat sheet
J. Appl. Phys. 80, 30–37 (1996)
https://doi.org/10.1063/1.362819
Ion energy distributions in SF6 plasmas at a radio‐frequency powered electrode
J. Appl. Phys. 80, 56–65 (1996)
https://doi.org/10.1063/1.362761
Unique x‐ray diffraction pattern at grazing incidence from misfit dislocations in SiGe thin films
J. Appl. Phys. 80, 89–96 (1996)
https://doi.org/10.1063/1.362776
Preparation and properties of ferromagnetic carbon‐coated Fe, Co, and Ni nanoparticles
J. Appl. Phys. 80, 103–108 (1996)
https://doi.org/10.1063/1.362765
Hydrogen determination in Si‐rich oxide thin films
J. Appl. Phys. 80, 109–114 (1996)
https://doi.org/10.1063/1.362766
Cholesteric liquid‐crystal displays illuminated by diffuse and partially diffuse light
J. Appl. Phys. 80, 115–121 (1996)
https://doi.org/10.1063/1.362785
Non‐linear resistance behavior in the early stages and after electromigration in Al‐Si lines
J. Appl. Phys. 80, 143–150 (1996)
https://doi.org/10.1063/1.363552
The effect of excess gallium vacancies in low‐temperature GaAs/AlAs/GaAs:Si heterostructures
J. Appl. Phys. 80, 156–160 (1996)
https://doi.org/10.1063/1.362742
Kinetics and thermodynamics constraints in Pt gettering by P diffusion in Si
J. Appl. Phys. 80, 161–166 (1996)
https://doi.org/10.1063/1.362800
Microstructural evolution during epitaxial growth of Ag on vicinal InP(100) surfaces
J. Appl. Phys. 80, 174–182 (1996)
https://doi.org/10.1063/1.362802
Structural investigation of the initial interface region formed by thin titanium films on silicon (111)
J. Appl. Phys. 80, 183–187 (1996)
https://doi.org/10.1063/1.362803
Effect of the oxidation of TiN on the stability of the Al/TiN interface
G. Gagnon; S. C. Gujrathi; M. Caron; J. F. Currie; Y. Tremblay; L. Ouellet; M. Biberger; R. Reynolds
J. Appl. Phys. 80, 188–195 (1996)
https://doi.org/10.1063/1.362804
Effect of Al interlayers on growth and magneto‐optic properties of MnBi thin films
J. Appl. Phys. 80, 196–201 (1996)
https://doi.org/10.1063/1.362781
X‐ray photoelectron spectroscopy study on composition and structure of sol‐gel derived PbTiO3 thin films
J. Appl. Phys. 80, 202–206 (1996)
https://doi.org/10.1063/1.362805
An approach based on Brownian motion for the simulation of ultrasmall semiconductor devices
J. Appl. Phys. 80, 226–232 (1996)
https://doi.org/10.1063/1.362808
Impedance studies on Li insertion electrodes of Sn oxide and oxyfluoride
J. Appl. Phys. 80, 233–241 (1996)
https://doi.org/10.1063/1.362809
Photoconductivity of photorefractive Sr0.61Ba0.39Nb2O6:Ce crystals at high light intensities
J. Appl. Phys. 80, 251–255 (1996)
https://doi.org/10.1063/1.362812
Transport properties of stoichiometric and nonstoichiometric GdAs single crystals
J. Appl. Phys. 80, 264–270 (1996)
https://doi.org/10.1063/1.362814
On the positive charge and interface states in metal‐oxide‐semiconductor capacitors
J. Appl. Phys. 80, 271–277 (1996)
https://doi.org/10.1063/1.362815
Thermal stability of W ohmic contacts to n‐type GaN
M. W. Cole; D. W. Eckart; W. Y. Han; R. L. Pfeffer; T. Monahan; F. Ren; C. Yuan; R. A. Stall; S. J. Pearton; Y. Li; Y. Lu
J. Appl. Phys. 80, 278–281 (1996)
https://doi.org/10.1063/1.362816
On the existence of a distribution of barrier heights in Pd2Si/Si Schottky diodes
J. Appl. Phys. 80, 288–294 (1996)
https://doi.org/10.1063/1.362818
Polarization dependence of two‐photon absorption in GaAs/Ga1−xAlxAs heterostructures
J. Appl. Phys. 80, 301–303 (1996)
https://doi.org/10.1063/1.362820
Acceptor level determination by carrier freezeout in reverse‐biased Hg0.8Cd0.2Te photodiodes
J. Appl. Phys. 80, 318–321 (1996)
https://doi.org/10.1063/1.362822
Carrier mobilities in graded InxGa1−xAs/Al0.2Ga0.8As quantum wells for high electron mobility transistors
J. Appl. Phys. 80, 322–325 (1996)
https://doi.org/10.1063/1.362799
Effect of oxygen partial pressure during postheat treatment on Bi2Sr2CaCu2Oy/Ag tapes
J. Appl. Phys. 80, 331–335 (1996)
https://doi.org/10.1063/1.362824
Crystal structure and magnetism of LaCo13−x−yFexSiy compounds
J. Appl. Phys. 80, 336–341 (1996)
https://doi.org/10.1063/1.362786
Switching characteristics of submicron cobalt islands
J. Appl. Phys. 80, 342–346 (1996)
https://doi.org/10.1063/1.362787
Continuous evolution of the in‐plane magnetic anisotropies with thickness in epitaxial Fe films
J. Appl. Phys. 80, 347–355 (1996)
https://doi.org/10.1063/1.362788
Fully dense Sm2Fe17Nx permanent magnets prepared by shock compression
J. Appl. Phys. 80, 356–361 (1996)
https://doi.org/10.1063/1.362789
Infrared study of polarization reversal in a polyurethane and its low molecular weight model compound
J. Appl. Phys. 80, 362–366 (1996)
https://doi.org/10.1063/1.362790
Leakage current in rapid thermally processed lead iron niobate films synthesized by a sol gel method
J. Appl. Phys. 80, 367–371 (1996)
https://doi.org/10.1063/1.362784
Temperature evolution of domains in potassium niobate single crystals
J. Appl. Phys. 80, 376–381 (1996)
https://doi.org/10.1063/1.362792
Photoluminescence of chemically deposited CdSe nanocrystallites: Effects of crystallite polydispersity
J. Appl. Phys. 80, 401–405 (1996)
https://doi.org/10.1063/1.362797
Exciton luminescence in Ge–Ge1−xSix multiple‐quantum‐well structures
L. K. Orlov; V. Ya. Aleshkin; N. G. Kalugin; N. A. Bekin; O. A. Kuznetsov; B. Dietrich; G. Bacquet; J. Leotin; M. Brousseau; F. Hassen
J. Appl. Phys. 80, 415–422 (1996)
https://doi.org/10.1063/1.362743
Spectroscopic light scattering from electrochromic tungsten‐oxide‐based films
J. Appl. Phys. 80, 423–430 (1996)
https://doi.org/10.1063/1.362778
Determination of molecular orientation of very thin rubbed and unrubbed polyimide films
J. Appl. Phys. 80, 431–439 (1996)
https://doi.org/10.1063/1.362744
Optical absorption spectra of C70 thin films
J. Appl. Phys. 80, 459–463 (1996)
https://doi.org/10.1063/1.362747
Controlled micro oxidation of CdTe surface by laser irradiation: A micro‐spectroscopic study
J. Appl. Phys. 80, 477–481 (1996)
https://doi.org/10.1063/1.362779
Structural and optical studies of InxGa1−xAs/GaAs multiple quantum wells
M. Di Dio; M. Lomascolo; A. Passaseo; C. Gerardi; C. Giannini; A. Quirini; L. Tapfer; P. V. Giugno; M. De Vittorio; D. Greco; A. L. Convertino; L. Vasanelli; R. Rinaldi; R. Cingolani
J. Appl. Phys. 80, 482–489 (1996)
https://doi.org/10.1063/1.362751
Photoluminescence and its decay of the dye/porous‐silicon composite system
J. Appl. Phys. 80, 490–493 (1996)
https://doi.org/10.1063/1.362752
Low temperature luminescence studies of Ca1−xErxF2+x thin films epitaxially grown on silicon substrates
J. Appl. Phys. 80, 494–498 (1996)
https://doi.org/10.1063/1.362753
Laser removal of particles from magnetic head sliders
J. Appl. Phys. 80, 499–504 (1996)
https://doi.org/10.1063/1.362754
Thermal analysis of float‐zone traveling solvent crystal growth of LaB6
J. Appl. Phys. 80, 518–528 (1996)
https://doi.org/10.1063/1.362780
Spallation of thin elastic coatings from elastic substrates by laser induced pressure pulses
J. Appl. Phys. 80, 529–542 (1996)
https://doi.org/10.1063/1.362757
Investigation of resonance light absorption and rectification by subnanostructures
J. Appl. Phys. 80, 565–568 (1996)
https://doi.org/10.1063/1.362762
Application of amorphous Cu–Zr binary alloy as a diffusion barrier in Cu/Si contact systems
J. Appl. Phys. 80, 569–573 (1996)
https://doi.org/10.1063/1.362763
Device structures on porous silicon studied by scanning electron microscopy in the electron‐beam current mode
L. A. Balagurov; E. A. Katz; E. A. Petrova; A. V. Govorkov; N. I. Ritova; V. M. Evdokimov; A. E. Lük’yanov; N. A. Butilkina
J. Appl. Phys. 80, 574–578 (1996)
https://doi.org/10.1063/1.362827
Growth mechanism of iron‐filled carbon nanotubules
J. Appl. Phys. 80, 579–581 (1996)
https://doi.org/10.1063/1.362720
Ground and excited state exciton spectra from GaN grown by molecular‐beam epitaxy
J. Appl. Phys. 80, 594–596 (1996)
https://doi.org/10.1063/1.362724
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.