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Heat resistance of Mo/Si, MoSi₂/Si, and Mo₅Si₃/Si multilayer soft x‐ray mirrors

Hisataka Takenaka; Tomoaki Kawamura; Yoshikazu Ishii; Satoru Asagiri

J. Appl. Phys. 78, 5227–5230 (1995) https://doi.org/10.1063/1.359698

View articletitled, Heat resistance of Mo/Si, MoSi2/Si, and Mo5Si3/Si multilayer soft x‐ray mirrors

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Free electron laser dynamics, evolution of the bunching coefficients, and coherent harmonic generation

G. Dattoli; L. Giannessi; P. L. Ottaviani; A. Segreto

J. Appl. Phys. 78, 5231–5243 (1995) https://doi.org/10.1063/1.359699

Abstract

View articletitled, Free electron laser dynamics, evolution of the bunching coefficients, and coherent harmonic generation

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Effect of phase shifter on the characteristics of the distributed feedback laser

Daniel W. C. So; S. R. Seshadri

J. Appl. Phys. 78, 5244–5252 (1995) https://doi.org/10.1063/1.359700

Abstract

View articletitled, Effect of phase shifter on the characteristics of the distributed feedback laser

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Characterization of reflective cholesteric liquid‐crystal displays

W. D. St. John; Z.‐J. Lu; J. W. Doane

J. Appl. Phys. 78, 5253–5265 (1995) https://doi.org/10.1063/1.359701

Abstract

View articletitled, Characterization of reflective cholesteric liquid‐crystal displays

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Thermal wave propagation in thin films on substrates

A. A. Maznev; J. Hartmann; M. Reichling

J. Appl. Phys. 78, 5266–5269 (1995) https://doi.org/10.1063/1.359702

Abstract

View articletitled, Thermal wave propagation in thin films on substrates

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Measurements of the electrohydrodynamic instability in planar geometry using gallium

C. S. Mayberry; E. Schamiloglu; G. W. Donohoe

J. Appl. Phys. 78, 5270–5276 (1995) https://doi.org/10.1063/1.360697

Abstract

View articletitled, Measurements of the electrohydrodynamic instability in planar geometry using gallium

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Phosphorescence from tungsten clusters during laser‐assisted chemical‐vapor deposition of tungsten

P. Heszler; P. Mogyorósi; J. O. Carlsson

J. Appl. Phys. 78, 5277–5282 (1995) https://doi.org/10.1063/1.359703

Abstract

View articletitled, Phosphorescence from tungsten clusters during laser‐assisted chemical‐vapor deposition of tungsten

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High‐pressure arcs as vacuum‐atmosphere interface and plasma lens for nonvacuum electron beam welding machines, electron beam melting, and nonvacuum ion material modification

Ady Hershcovitch

J. Appl. Phys. 78, 5283–5288 (1995) https://doi.org/10.1063/1.359704

Abstract

View articletitled, High‐pressure arcs as vacuum‐atmosphere interface and plasma lens for nonvacuum electron beam welding machines, electron beam melting, and nonvacuum ion material modification

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Fractal statistics of partial discharges with polymeric samples

T. Ficker

J. Appl. Phys. 78, 5289–5295 (1995) https://doi.org/10.1063/1.359705

Abstract

View articletitled, Fractal statistics of partial discharges with polymeric samples

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Magnetic field distribution measurements in a low‐pressure inductive discharge

R. Piejak; V. Godyak; B. Alexandrovich

J. Appl. Phys. 78, 5296–5301 (1995) https://doi.org/10.1063/1.359706

Abstract

View articletitled, Magnetic field distribution measurements in a low‐pressure inductive discharge

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Deposition and analysis of silicon clusters generated by laser‐induced gas phase reaction

M. Ehbrecht; H. Ferkel; F. Huisken; L. Holz; Yu. N. Polivanov; V. V. Smirnov; O. M. Stelmakh; R. Schmidt

J. Appl. Phys. 78, 5302–5306 (1995) https://doi.org/10.1063/1.360737

Abstract

View articletitled, Deposition and analysis of silicon clusters generated by laser‐induced gas phase reaction

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Structural properties of a‐C:H deposited using saddle‐field glow‐discharge decomposition of methane

P. K. Lim; F. Gaspari; S. Zukotynski

J. Appl. Phys. 78, 5307–5312 (1995) https://doi.org/10.1063/1.359707

Abstract

View articletitled, Structural properties of a‐C:H deposited using saddle‐field glow‐discharge decomposition of methane

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Consistent quantitative model for the spatial extent of point defect interactions in silicon

Anuradha M. Agarwal; Scott T. Dunham

J. Appl. Phys. 78, 5313–5319 (1995) https://doi.org/10.1063/1.359708

Abstract

View articletitled, Consistent quantitative model for the spatial extent of point defect interactions in silicon

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Synthesis of actinide carbides encapsulated within carbon nanoparticles

Hideyuki Funasaka; Kenji Sugiyama; Kazunori Yamamoto; Takeshi Takahashi

J. Appl. Phys. 78, 5320–5324 (1995) https://doi.org/10.1063/1.359709

Abstract

View articletitled, Synthesis of actinide carbides encapsulated within carbon nanoparticles

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Deep‐level transient spectroscopy and electrical characterization of ion‐implanted p‐n junctions into undoped InP

Jaime M. Martin; S. García; I. Mártil; G. González‐Díaz; E. Castán; S. Dueñas

J. Appl. Phys. 78, 5325–5330 (1995) https://doi.org/10.1063/1.359710

Abstract

View articletitled, Deep‐level transient spectroscopy and electrical characterization of ion‐implanted p‐n junctions into undoped InP

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Observation of systematic deviations of period in W/Si and W/C multilayers

Liwen Wu; Zuimin Jiang; Wenhan Liu; Shuyuan Zhang; Ziqin Wu

J. Appl. Phys. 78, 5331–5334 (1995) https://doi.org/10.1063/1.359711

Abstract

View articletitled, Observation of systematic deviations of period in W/Si and W/C multilayers

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General shock wave equation of state for solids

P. Boogerd; H. J. Verbeek; M. Stuivinga; A. C. van der Steen; P. J. van der Put; J. Schoonman

J. Appl. Phys. 78, 5335–5344 (1995) https://doi.org/10.1063/1.359712

Abstract

View articletitled, General shock wave equation of state for solids

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Secondary‐ion‐mass spectrometry and near‐field studies of Ti:LiNbO₃ optical waveguides

F. Caccavale; P. Chakraborty; A. Quaranta; I. Mansour; G. Gianello; S. Bosso; R. Corsini; G. Mussi

J. Appl. Phys. 78, 5345–5350 (1995) https://doi.org/10.1063/1.359713

Abstract

View articletitled, Secondary‐ion‐mass spectrometry and near‐field studies of Ti:LiNbO3 optical waveguides

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Diffusion of tin in germanium studied by secondary ion mass spectrometry

M. Friesel; U. Södervall; W. Gust

J. Appl. Phys. 78, 5351–5355 (1995) https://doi.org/10.1063/1.359714

Abstract

View articletitled, Diffusion of tin in germanium studied by secondary ion mass spectrometry

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Study of the oxidation of gold‐tin preforms using x‐ray photoelectron spectroscopy

J. Ashley Taylor; Sailesh M. Merchant; D. L. Perry

J. Appl. Phys. 78, 5356–5361 (1995) https://doi.org/10.1063/1.359715

Abstract

View articletitled, Study of the oxidation of gold‐tin preforms using x‐ray photoelectron spectroscopy

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A spectroscopic ellipsometry study of the interfacial stresses and their correlation with microvoids in very thin thermally grown SiO₂ films

S. Logothetidis; S. Boultadakis

J. Appl. Phys. 78, 5362–5365 (1995) https://doi.org/10.1063/1.359716

Abstract

View articletitled, A spectroscopic ellipsometry study of the interfacial stresses and their correlation with microvoids in very thin thermally grown SiO2 films

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Deposition and hydrogen content of carbon films grown by CH⁺₃ ion‐beam bombardment

H. Plank; W. Wang; W. Eckstein; R. Schwörer; H. J. Steffen; J. Roth

J. Appl. Phys. 78, 5366–5372 (1995) https://doi.org/10.1063/1.359717

Abstract

View articletitled, Deposition and hydrogen content of carbon films grown by CH+3 ion‐beam bombardment

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Origin of compositional modulation of InGaAs in selective area metalorganic vapor phase epitaxy

Takuya Fujii; Mitsuru Ekawa

J. Appl. Phys. 78, 5373–5386 (1995) https://doi.org/10.1063/1.360698

Abstract

View articletitled, Origin of compositional modulation of InGaAs in selective area metalorganic vapor phase epitaxy

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Photoluminescence characterization of InGaP/GaAs heterostructures grown by metalorganic chemical vapor deposition

Takumi Nittono; Suehiro Sugitani; Fumiaki Hyuga

J. Appl. Phys. 78, 5387–5390 (1995) https://doi.org/10.1063/1.359718

Abstract

View articletitled, Photoluminescence characterization of InGaP/GaAs heterostructures grown by metalorganic chemical vapor deposition

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Growth and topography study of MnBi films

U. Rüdiger; H. Berndt; A. Schirmeisen; P. Fumagalli; G. Güntherodt

J. Appl. Phys. 78, 5391–5394 (1995) https://doi.org/10.1063/1.359719

Abstract

View articletitled, Growth and topography study of MnBi films

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High‐flux low‐energy (≂20 eV) N⁺₂ ion irradiation during TiN deposition by reactive magnetron sputtering: Effects on microstructure and preferred orientation

L. Hultman; J.‐E. Sundgren; J. E. Greene; D. B. Bergstrom; I. Petrov

J. Appl. Phys. 78, 5395–5403 (1995) https://doi.org/10.1063/1.359720

Abstract

View articletitled, High‐flux low‐energy (≂20 eV) N+2 ion irradiation during TiN deposition by reactive magnetron sputtering: Effects on microstructure and preferred orientation

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Formation of epitaxial Fe_3−xSi_1+x (0≤x≤1) silicides on Si(111)

S. Hong; P. Wetzel; G. Gewinner; D. Bolmont; C. Pirri

J. Appl. Phys. 78, 5404–5411 (1995) https://doi.org/10.1063/1.359721

Abstract

View articletitled, Formation of epitaxial Fe3−xSi1+x (0≤x≤1) silicides on Si(111)

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Formation of iron or chromium doped epitaxial sapphire thin films on sapphire substrates

Ning Yu; Qingzhe Wen; David R. Clarke; Paul C. McIntyre; Harriet Kung; Michael Nastasi; Todd W. Simpson; Ian V. Mitchell; DeQuan Li

J. Appl. Phys. 78, 5412–5421 (1995) https://doi.org/10.1063/1.359722

Abstract

View articletitled, Formation of iron or chromium doped epitaxial sapphire thin films on sapphire substrates

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Metallization of electronic polymers: A comparative study of polyvinylidene fluoride, polytetrafluoroethylene, and polyethylene

Tim C. S. Chen; Sharmila M. Mukhopadhyay

J. Appl. Phys. 78, 5422–5426 (1995) https://doi.org/10.1063/1.359723

Abstract

View articletitled, Metallization of electronic polymers: A comparative study of polyvinylidene fluoride, polytetrafluoroethylene, and polyethylene

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Deep levels in indium selenide single crystals doped with iodine

G. Micocci; A. Tepore; R. Rella; P. Siciliano

J. Appl. Phys. 78, 5427–5430 (1995) https://doi.org/10.1063/1.359724

Abstract

View articletitled, Deep levels in indium selenide single crystals doped with iodine

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A sensitive technique for detecting low concentrations of deep level traps: Current‐source deep level transient spectroscopy

David P. Rancour

J. Appl. Phys. 78, 5431–5438 (1995) https://doi.org/10.1063/1.359657

Abstract

View articletitled, A sensitive technique for detecting low concentrations of deep level traps: Current‐source deep level transient spectroscopy

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Thermal hole emission from Si/Si_1−xGe_x/Si quantum wells by deep level transient spectroscopy

O. Chretien; R. Apetz; L. Vescan; A. Souifi; H. Lüth; K. Schmalz; J. J. Koulmann

J. Appl. Phys. 78, 5439–5447 (1995) https://doi.org/10.1063/1.359658

Abstract

View articletitled, Thermal hole emission from Si/Si1−xGex/Si quantum wells by deep level transient spectroscopy

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Monte Carlo simulation of multiphonon capture mechanism by deep neutral impurities in Si in the presence of an electric field

A. Palma; J. A. Jiménez‐Tejada; A. Godoy; I. Melchor; P. Cartujo

J. Appl. Phys. 78, 5448–5453 (1995) https://doi.org/10.1063/1.359659

Abstract

View articletitled, Monte Carlo simulation of multiphonon capture mechanism by deep neutral impurities in Si in the presence of an electric field

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The effect of strain on hot‐electron and hole longitudinal diffusion and noise in Si and Si_0.9Ge_0.1

K. Yeom; J. M. Hinckley; J. Singh

J. Appl. Phys. 78, 5454–5459 (1995) https://doi.org/10.1063/1.359660

Abstract

View articletitled, The effect of strain on hot‐electron and hole longitudinal diffusion and noise in Si and Si0.9Ge0.1

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Superlattice applications to thermoelectricity

L. W. Whitlow; T. Hirano

J. Appl. Phys. 78, 5460–5466 (1995) https://doi.org/10.1063/1.359661

Abstract

View articletitled, Superlattice applications to thermoelectricity

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Effects of carrier mass differences on the I–V characteristics of resonant interband tunneling structures in the presence of parallel magnetic field

Maria A. Davidovich

J. Appl. Phys. 78, 5467–5473 (1995) https://doi.org/10.1063/1.359662

Abstract

View articletitled, Effects of carrier mass differences on the I–V characteristics of resonant interband tunneling structures in the presence of parallel magnetic field

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Si₈₀Ge₂₀ thermoelectric alloys prepared with GaP additions

B. A. Cook; J. L. Harringa; S. H. Han; C. B. Vining

J. Appl. Phys. 78, 5474–5480 (1995) https://doi.org/10.1063/1.359663

Abstract

View articletitled, Si80Ge20 thermoelectric alloys prepared with GaP additions

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Analysis of nonideal Schottky and p‐n junction diodes—Extraction of parameters from I–V plots

M. Lyakas; R. Zaharia; M. Eizenberg

J. Appl. Phys. 78, 5481–5489 (1995) https://doi.org/10.1063/1.359664

Abstract

View articletitled, Analysis of nonideal Schottky and p‐n junction diodes—Extraction of parameters from I–V plots

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Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells

Xiaobo Zhang; Olivier Briot; Bernard Gil; Roger Aulombard

J. Appl. Phys. 78, 5490–5492 (1995) https://doi.org/10.1063/1.360695

Abstract

View articletitled, Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells

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Electrical properties of CdTe films prepared by close‐spaced sublimation with screen‐printed source layers

Gil Yong Chung; Sung Chan Park; Kurn Cho; Byung Tae Ahn

J. Appl. Phys. 78, 5493–5498 (1995) https://doi.org/10.1063/1.359665

Abstract

View articletitled, Electrical properties of CdTe films prepared by close‐spaced sublimation with screen‐printed source layers

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Preparation of self‐aligned in‐line tunnel junctions for applications in single‐charge electronics

M. Götz; K. Blüthner; W. Krech; A. Nowack; H.‐J. Fuchs; E.‐B. Kley; P. Thieme; Th. Wagner; G. Eska; K. Hecker; H. Hegger

J. Appl. Phys. 78, 5499–5502 (1995) https://doi.org/10.1063/1.359666

Abstract

View articletitled, Preparation of self‐aligned in‐line tunnel junctions for applications in single‐charge electronics

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Electron momentum relaxation time and mobility in a free‐standing quantum well

N. A. Bannov; V. A. Aristov; V. V. Mitin

J. Appl. Phys. 78, 5503–5510 (1995) https://doi.org/10.1063/1.359667

Abstract

View articletitled, Electron momentum relaxation time and mobility in a free‐standing quantum well

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Metal–n‐6H–SiC surface barrier height—Experimental data and description in the traditional terms

A. L. Syrkin; A. N. Andreev; A. A. Lebedev; M. G. Rastegaeva; V. E. Chelnokov

J. Appl. Phys. 78, 5511–5514 (1995) https://doi.org/10.1063/1.359668

Abstract

View articletitled, Metal–n‐6H–SiC surface barrier height—Experimental data and description in the traditional terms

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Investigation of carrier transport effects in multiple‐quantum‐well lasers

Y. Chen; M. S. Wartak; H. Lu; T. Makino

J. Appl. Phys. 78, 5515–5517 (1995) https://doi.org/10.1063/1.359669

Abstract

View articletitled, Investigation of carrier transport effects in multiple‐quantum‐well lasers

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Monte Carlo calculations of the temperature‐ and field‐dependent electron transport parameters for 4H‐SiC

R. P. Joshi

J. Appl. Phys. 78, 5518–5521 (1995) https://doi.org/10.1063/1.359670

Abstract

View articletitled, Monte Carlo calculations of the temperature‐ and field‐dependent electron transport parameters for 4H‐SiC

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Optimization of the slow‐mode plasmon polariton in light‐emitting tunnel junctions

M. P. Connolly; P. Dawson

J. Appl. Phys. 78, 5522–5533 (1995) https://doi.org/10.1063/1.359671

Abstract

View articletitled, Optimization of the slow‐mode plasmon polariton in light‐emitting tunnel junctions

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Positron annihilation measurements of Pr‐containing superconductor compounds

K. Jung; J. G. Byrne; M. C. de Andrade; M. B. Maple

J. Appl. Phys. 78, 5534–5539 (1995) https://doi.org/10.1063/1.359672

Abstract

View articletitled, Positron annihilation measurements of Pr‐containing superconductor compounds

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Effect of intragrain current on low‐field magnetic‐flux distributions of zero‐field‐cooled polycrystalline YBa₂Cu₃O_7−δ

Yuji Noguchi; Satoshi Ohara; Ben Huybrechts; Masasuke Takata

J. Appl. Phys. 78, 5540–5544 (1995) https://doi.org/10.1063/1.359673

Abstract

View articletitled, Effect of intragrain current on low‐field magnetic‐flux distributions of zero‐field‐cooled polycrystalline YBa2Cu3O7−δ

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Grain orientation in thick laser‐deposited Y₁Ba₂Cu₃O_7−δ films: Adjustment of c‐axis orientation

S. Sievers; F. Mattheis; H. U. Krebs; H. C. Freyhardt

J. Appl. Phys. 78, 5545–5548 (1995) https://doi.org/10.1063/1.359674

Abstract

View articletitled, Grain orientation in thick laser‐deposited Y1Ba2Cu3O7−δ films: Adjustment of c‐axis orientation

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Magnetic anisotropy and interlayer exchange coupling in the sputtered Co/Ag multilayers

J. W. Feng; S. S. Kang; F. M. Pan; G. J. Jin; M. Lu; A. Hu; S. S. Jiang; D. Feng

J. Appl. Phys. 78, 5549–5553 (1995) https://doi.org/10.1063/1.359675

Abstract

View articletitled, Magnetic anisotropy and interlayer exchange coupling in the sputtered Co/Ag multilayers

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Magnetization reversal mechanisms in NiFe/Cu/NiFe/FeMn spin‐valve structures

M. F. Gillies; J. N. Chapman; J. C. S. Kools

J. Appl. Phys. 78, 5554–5562 (1995) https://doi.org/10.1063/1.359676

Abstract

View articletitled, Magnetization reversal mechanisms in NiFe/Cu/NiFe/FeMn spin‐valve structures

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Structural and magnetic properties of Co‐Nb/Pd multilayers

Shi‐shen Yan; Yi‐hua Liu; Min Zheng; Liang‐mo Mei; Jin‐geng Chen; Jie Huang

J. Appl. Phys. 78, 5563–5567 (1995) https://doi.org/10.1063/1.359677

Abstract

View articletitled, Structural and magnetic properties of Co‐Nb/Pd multilayers

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A magnetic, neutron‐diffraction, and Mössbauer spectral study of the Ce₂Fe_17−xSi_x solid solutions

D. P. Middleton; S. R. Mishra; Gary J. Long; O. A. Pringle; Z. Hu; W. B. Yelon; F. Grandjean; K. H. J. Buschow

J. Appl. Phys. 78, 5568–5576 (1995) https://doi.org/10.1063/1.359678

Abstract

View articletitled, A magnetic, neutron‐diffraction, and Mössbauer spectral study of the Ce2Fe17−xSix solid solutions

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Anomalous shape of magnetic loops in the Rayleigh region

St. Seeck; M. Lambeck

J. Appl. Phys. 78, 5577–5580 (1995) https://doi.org/10.1063/1.359679

Abstract

View articletitled, Anomalous shape of magnetic loops in the Rayleigh region

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Raman investigation of undoped, niobium‐doped, and lanthanum‐doped lead zirconate‐titanate ceramics

I. El‐Harrad; P. Becker; C. Carabatos‐Nédelec; J. Handerek; Z. Ujma; D. Dmytrow

J. Appl. Phys. 78, 5581–5591 (1995) https://doi.org/10.1063/1.359680

Abstract

View articletitled, Raman investigation of undoped, niobium‐doped, and lanthanum‐doped lead zirconate‐titanate ceramics

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Piezoelectric properties of bidomain LiNbO₃ crystals

V. D. Kugel; G. Rosenman; D. Shur

J. Appl. Phys. 78, 5592–5596 (1995) https://doi.org/10.1063/1.359681

Abstract

View articletitled, Piezoelectric properties of bidomain LiNbO3 crystals

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Study of poling behavior of biaxially stretched poly(vinylidene fluoride) films using the constant‐current corona triode

José A. Giacometti; P. A. Ribeiro; M. Raposo; J. N. Marat‐Mendes; J. S. Carvalho Campos; Aimé S. DeReggi

J. Appl. Phys. 78, 5597–5603 (1995) https://doi.org/10.1063/1.359682

Abstract

View articletitled, Study of poling behavior of biaxially stretched poly(vinylidene fluoride) films using the constant‐current corona triode

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Structural characterization of epitaxial BaTiO₃ thin films grown by sputter deposition on MgO(100)

Sangsub Kim; Shunichi Hishita; Young Min Kang; Sunggi Baik

J. Appl. Phys. 78, 5604–5608 (1995) https://doi.org/10.1063/1.360696

Abstract

View articletitled, Structural characterization of epitaxial BaTiO3 thin films grown by sputter deposition on MgO(100)

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Temperature dependence of the Urbach edge in GaAs

S. R. Johnson; T. Tiedje

J. Appl. Phys. 78, 5609–5613 (1995) https://doi.org/10.1063/1.359683

Abstract

View articletitled, Temperature dependence of the Urbach edge in GaAs

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Photoluminescence analysis of Er‐doped GaAs under host photoexcitation and direct intra‐4f‐shell photoexcitation

Kenichiro Takahei; Akihito Taguchi

J. Appl. Phys. 78, 5614–5618 (1995) https://doi.org/10.1063/1.359684

Abstract

View articletitled, Photoluminescence analysis of Er‐doped GaAs under host photoexcitation and direct intra‐4f‐shell photoexcitation

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Electronic states of vapor deposited electron and hole transport agents and luminescent materials for light‐emitting diodes

A. Schmidt; M. L. Anderson; N. R. Armstrong

J. Appl. Phys. 78, 5619–5625 (1995) https://doi.org/10.1063/1.359685

Abstract

View articletitled, Electronic states of vapor deposited electron and hole transport agents and luminescent materials for light‐emitting diodes

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Photoluminescence of CdTe doped with arsenic and antimony acceptors

M. Soltani; M. Certier; R. Evrard; E. Kartheuser

J. Appl. Phys. 78, 5626–5632 (1995) https://doi.org/10.1063/1.359686

Abstract

View articletitled, Photoluminescence of CdTe doped with arsenic and antimony acceptors

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On the mechanism of emission from the ferroelectric ceramic cathode

Victor F. Puchkarev; Gennady A. Mesyats

J. Appl. Phys. 78, 5633–5637 (1995) https://doi.org/10.1063/1.359687

Abstract

View articletitled, On the mechanism of emission from the ferroelectric ceramic cathode

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Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser‐modulator integration

A. Hamoudi; E. V. K. Rao; Ph. Krauz; A. Ramdane; A. Ougazzaden; D. Robein; H. Thibierge

J. Appl. Phys. 78, 5638–5641 (1995) https://doi.org/10.1063/1.359688

Abstract

View articletitled, Controlled disordering of compressively strained InGaAsP multiple quantum wells under SiO:P encapsulant and application to laser‐modulator integration

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Influence of the interface bond type on the far‐infrared reflectivity of InAs/GaSb superlattices

C. Gadaleta; G. Scamarcio; F. Fuchs; J. Schmitz

J. Appl. Phys. 78, 5642–5644 (1995) https://doi.org/10.1063/1.359689

Abstract

View articletitled, Influence of the interface bond type on the far‐infrared reflectivity of InAs/GaSb superlattices

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Ellipsometric studies on Cd_1−xMn_xTe thin films under the influence of HeNe laser and small alternating magnetic fields

Sharat Chandra; L. K. Malhotra; A. C. Rastogi

J. Appl. Phys. 78, 5645–5653 (1995) https://doi.org/10.1063/1.359690

Abstract

View articletitled, Ellipsometric studies on Cd1−xMnxTe thin films under the influence of HeNe laser and small alternating magnetic fields

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Photoluminescence and photoconductivity in CdIn₂Te₄

G. Couturier; B. Jean; J. Salardenne

J. Appl. Phys. 78, 5654–5659 (1995) https://doi.org/10.1063/1.359691

Abstract

View articletitled, Photoluminescence and photoconductivity in CdIn2Te4

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Excitation spectra of photoinduced absorption in a‐Si:H

I. Malinovsky; F. Hajiev; S. Uğur; H. Uğur

J. Appl. Phys. 78, 5660–5664 (1995) https://doi.org/10.1063/1.359692

Abstract

View articletitled, Excitation spectra of photoinduced absorption in a‐Si:H

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Hypersound anomalies and elastic constants in single‐crystal PbMg_1/3Nb_2/3O₃ by Brillouin scattering

C.‐S. Tu; V. Hugo Schmidt; I. G. Siny

J. Appl. Phys. 78, 5665–5668 (1995) https://doi.org/10.1063/1.359622

Abstract

View articletitled, Hypersound anomalies and elastic constants in single‐crystal PbMg1/3Nb2/3O3 by Brillouin scattering

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Donor‐acceptor pair luminescence involving the iodine A center in CdTe

Jaesun Lee; N. C. Giles; D. Rajavel; C. J. Summers

J. Appl. Phys. 78, 5669–5674 (1995) https://doi.org/10.1063/1.359623

Abstract

View articletitled, Donor‐acceptor pair luminescence involving the iodine A center in CdTe

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Electrical and optical properties of thermally evaporated LiBO₂–LiF composite films

Nguyen Can; Vo‐Van Truong

J. Appl. Phys. 78, 5675–5679 (1995) https://doi.org/10.1063/1.359624

Abstract

View articletitled, Electrical and optical properties of thermally evaporated LiBO2–LiF composite films

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In situ laser reflectometry study of the morphology of Ge/GaAs layers during their heteroepitaxial growth

A. Leycuras; M. G. Lee; A. Hausmann

J. Appl. Phys. 78, 5680–5685 (1995) https://doi.org/10.1063/1.359625

Abstract

View articletitled, In situ laser reflectometry study of the morphology of Ge/GaAs layers during their heteroepitaxial growth

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Temporal evolution of the physical response during photorefractive grating formation and erasure for BSO

J. G. Murillo; L. F. Magaña; M. Carrascosa; F. Agulló‐López

J. Appl. Phys. 78, 5686–5690 (1995) https://doi.org/10.1063/1.359626

Abstract

View articletitled, Temporal evolution of the physical response during photorefractive grating formation and erasure for BSO

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Photoluminescence properties of ZnGa₂O₄:Mn powder phosphors

T. K. Tran; W. Park; J. W. Tomm; B. K. Wagner; S. M. Jacobsen; C. J. Summers; P. N. Yocom; S. K. McClelland

J. Appl. Phys. 78, 5691–5695 (1995) https://doi.org/10.1063/1.359627

Abstract

View articletitled, Photoluminescence properties of ZnGa2O4:Mn powder phosphors

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Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells

W. Z. Shen; S. C. Shen; W. G. Tang; Y. Zhao; A. Z. Li

J. Appl. Phys. 78, 5696–5700 (1995) https://doi.org/10.1063/1.359628

Abstract

View articletitled, Photoluminescence of quaternary GaInAsSb/AlGaAsSb strained multiple quantum wells

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Photoemission study of CdS heterojunction formation with binary selenide semiconductors

Art J. Nelson

J. Appl. Phys. 78, 5701–5705 (1995) https://doi.org/10.1063/1.359629

Abstract

View articletitled, Photoemission study of CdS heterojunction formation with binary selenide semiconductors

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Thermal anisotropy of polymer carbon fiber composites as revealed by photodeflection methods

M. Bertolotti; A. Ferrari; G. L. Liakhou; R. Li Voti; A. Marras; T. A. Ezquerra; F. J. Balta‐Calleja

J. Appl. Phys. 78, 5706–5712 (1995) https://doi.org/10.1063/1.359630

Abstract

View articletitled, Thermal anisotropy of polymer carbon fiber composites as revealed by photodeflection methods

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Development of highly conductive n‐type μc‐Si:H films at low power for device applications

S. C. Saha; Swati Ray

J. Appl. Phys. 78, 5713–5720 (1995) https://doi.org/10.1063/1.359631

Abstract

View articletitled, Development of highly conductive n‐type μc‐Si:H films at low power for device applications

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Growth of epitaxial AlN(0001) on Si(111) by reactive magnetron sputter deposition

I. Ivanov; L. Hultman; K. Järrendahl; P. Mårtensson; J.‐E. Sundgren; B. Hjörvarsson; J. E. Greene

J. Appl. Phys. 78, 5721–5726 (1995) https://doi.org/10.1063/1.359632

Abstract

View articletitled, Growth of epitaxial AlN(0001) on Si(111) by reactive magnetron sputter deposition

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Atomic scale etching processes of n‐Si(111) in NH₄F solutions: In situ scanning tunneling microscopy

Kazutoshi Kaji; Shueh‐Lin Yau; Kingo Itaya

J. Appl. Phys. 78, 5727–5733 (1995) https://doi.org/10.1063/1.359633

Abstract

View articletitled, Atomic scale etching processes of n‐Si(111) in NH4F solutions: In situ scanning tunneling microscopy

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Low ion energy electron cyclotron resonance etching of InP using a Cl₂/N₂ mixture

S. Miyakuni; R. Hattori; K Sato; H. Takano; O. Ishihara

J. Appl. Phys. 78, 5734–5738 (1995) https://doi.org/10.1063/1.359634

Abstract

View articletitled, Low ion energy electron cyclotron resonance etching of InP using a Cl2/N2 mixture

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Characteristics of β‐phase PdAl Schottky contacts to n‐GaAs

T. S. Huang; J. G. Pang

J. Appl. Phys. 78, 5739–5744 (1995) https://doi.org/10.1063/1.359635

Abstract

View articletitled, Characteristics of β‐phase PdAl Schottky contacts to n‐GaAs

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The effect of ultrasonic pre‐treatment on nucleation density of chemical vapor deposition diamond

Chi Tang; David C. Ingram

J. Appl. Phys. 78, 5745–5749 (1995) https://doi.org/10.1063/1.359636

Abstract

View articletitled, The effect of ultrasonic pre‐treatment on nucleation density of chemical vapor deposition diamond

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Photoacoustic frequency heat‐transmission technique: Thermal and carrier transport parameters measurements in silicon

D. M. Todorović; P. M. Nikolić; M. D. Dramićanin; D. G. Vasiljević; Z. D. Ristovski

J. Appl. Phys. 78, 5750–5755 (1995) https://doi.org/10.1063/1.359637

Abstract

View articletitled, Photoacoustic frequency heat‐transmission technique: Thermal and carrier transport parameters measurements in silicon

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Two‐dimensional numerical simulation of the pulse response of a semi‐insulating InGaAs:Fe photodetector

C. M. Hurd; W. R. McKinnon

J. Appl. Phys. 78, 5756–5764 (1995) https://doi.org/10.1063/1.359638

Abstract

View articletitled, Two‐dimensional numerical simulation of the pulse response of a semi‐insulating InGaAs:Fe photodetector

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Photoconductive gain and generation–recombination noise in quantum‐well photodetectors biased to strong electric field

V. D. Shadrin; V. V. Mitin; K. K. Choi; V. A. Kochelap

J. Appl. Phys. 78, 5765–5774 (1995) https://doi.org/10.1063/1.359639

Abstract

View articletitled, Photoconductive gain and generation–recombination noise in quantum‐well photodetectors biased to strong electric field

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Space charge generation in ZnS:Mn alternating‐current thin‐film electroluminescent devices

S. Shih; P. D. Keir; J. F. Wager; J. Viljanen

J. Appl. Phys. 78, 5775–5781 (1995) https://doi.org/10.1063/1.359640

Abstract

View articletitled, Space charge generation in ZnS:Mn alternating‐current thin‐film electroluminescent devices

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Modification of the adhesion and contact resistance of the Ag/YBa₂Cu₃O₇ interface with keV electron irradiation

S. D. Moss; R. A. O’Sullivan; P. J. K. Paterson; I. K. Snook; A. J. Russo; A. Katsaros; N. Savvides

J. Appl. Phys. 78, 5782–5786 (1995) https://doi.org/10.1063/1.359641

Abstract

View articletitled, Modification of the adhesion and contact resistance of the Ag/YBa2Cu3O7 interface with keV electron irradiation

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Numerical simulation of limiting currents for transport of intense relativistic electron beams in conducting waveguides

D. V. Rose; J. U. Guillory

J. Appl. Phys. 78, 5787–5794 (1995) https://doi.org/10.1063/1.359642

Abstract

View articletitled, Numerical simulation of limiting currents for transport of intense relativistic electron beams in conducting waveguides

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Electrodeposition and characterization of magnetic Ni‐Fe thin films on InP(100) surfaces

L. J. Gao; G. W. Anderson; P. R. Norton; Z‐H. Lu; J. P. McCaffrey; M. J. Graham

J. Appl. Phys. 78, 5795–5799 (1995) https://doi.org/10.1063/1.359643

Abstract

View articletitled, Electrodeposition and characterization of magnetic Ni‐Fe thin films on InP(100) surfaces

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Theory of ‘‘supercurrents’’ and their influence on field quality and stability of superconducting magnets

L. Krempasky; C. Schmidt

J. Appl. Phys. 78, 5800–5810 (1995) https://doi.org/10.1063/1.360694

Abstract

View articletitled, Theory of ‘‘supercurrents’’ and their influence on field quality and stability of superconducting magnets

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Shapiro steps in large‐area metallic‐barrier Josephson junctions

R. L. Kautz

J. Appl. Phys. 78, 5811–5819 (1995) https://doi.org/10.1063/1.359644

Abstract

View articletitled, Shapiro steps in large‐area metallic‐barrier Josephson junctions

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Observation and analysis of conductance oscillations in scanning tunneling microscopy of clean InP(110) surfaces

N. S. McAlpine; D. Haneman

J. Appl. Phys. 78, 5820–5821 (1995) https://doi.org/10.1063/1.359645

Abstract

View articletitled, Observation and analysis of conductance oscillations in scanning tunneling microscopy of clean InP(110) surfaces

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Optical band gap of the α−mercuric iodide

A. Ferreira da Silva; N. Veissid; C. Y. An; J. Caetano de Souza; A. V. Batista da Silva; P. César Farias; M. T. F. da Cruz

J. Appl. Phys. 78, 5822–5823 (1995) https://doi.org/10.1063/1.359646

Abstract

View articletitled, Optical band gap of the α−mercuric iodide

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An impurity‐related bistable defect in thermally processed silicon

K. Bonde Nielsen; B. Holm

J. Appl. Phys. 78, 5824–5826 (1995) https://doi.org/10.1063/1.359647

Abstract

View articletitled, An impurity‐related bistable defect in thermally processed silicon

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Persistent photoconductivity and DX centers in Cd_0.8Zn_0.2Te:Cl

J. W. Bennett; Tineke Thio; S. E. Kabakoff; D. J. Chadi; R. A. Linke; P. Becla

J. Appl. Phys. 78, 5827–5829 (1995) https://doi.org/10.1063/1.359648

Abstract

View articletitled, Persistent photoconductivity and DX centers in Cd0.8Zn0.2Te:Cl

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Effect of hydrogen termination and electron irradiation on the sticking probability of Sb on Si(100) surfaces exposed to Sb₄

A. P. Mills, Jr.; H.‐J. Gossmann

J. Appl. Phys. 78, 5830 (1995) https://doi.org/10.1063/1.359649

Abstract

View articletitled, Effect of hydrogen termination and electron irradiation on the sticking probability of Sb on Si(100) surfaces exposed to Sb4

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Efficient electroluminescence of distyrylarylene with hole transporting ability

Chishio Hosokawa; Hiroshi Tokailin; Hisahiro Higashi; Tadashi Kusumoto

J. Appl. Phys. 78, 5831–5833 (1995) https://doi.org/10.1063/1.359650

Abstract

View articletitled, Efficient electroluminescence of distyrylarylene with hole transporting ability

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Atomic layer epitaxy of GaAs from tertiarybutylarsine and triethylgallium

M. Aït‐Lhouss; J. L. Castaño; B. J. García; J. Piqueras

J. Appl. Phys. 78, 5834–5836 (1995) https://doi.org/10.1063/1.359651

Abstract

View articletitled, Atomic layer epitaxy of GaAs from tertiarybutylarsine and triethylgallium

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Modeling the ion energy dependence of the sp³/sp² bonding ratio in amorphous diamondlike films produced with a mass‐separated ion beam

I. Koponen; M. Hakovirta; R. Lappalainen

J. Appl. Phys. 78, 5837–5839 (1995) https://doi.org/10.1063/1.359652

Abstract

View articletitled, Modeling the ion energy dependence of the sp3/sp2 bonding ratio in amorphous diamondlike films produced with a mass‐separated ion beam

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Positive nonlinear index of refraction in tellurium dioxide single crystals above the two‐photon absorption edge

Yuichi Watanabe; Masato Ohnishi; Toshio Tsuchiya; Naoyuki Ueda; Hiroshi Kawazoe

J. Appl. Phys. 78, 5840–5841 (1995) https://doi.org/10.1063/1.359653

Abstract

View articletitled, Positive nonlinear index of refraction in tellurium dioxide single crystals above the two‐photon absorption edge

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Compositional separation in Co‐Mn magnetic thin films

David J. Rogers; Yasushi Maeda; Koji Takei

J. Appl. Phys. 78, 5842–5844 (1995) https://doi.org/10.1063/1.359654

Abstract

View articletitled, Compositional separation in Co‐Mn magnetic thin films

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An analytical approximation for the free electron density of the Hg_1−xCd_xTe alloy system for 0<x<1

D. Goren; G. Asa; Y. Nemirovsky

J. Appl. Phys. 78, 5845–5847 (1995) https://doi.org/10.1063/1.360735

Abstract

View articletitled, An analytical approximation for the free electron density of the Hg1−xCdxTe alloy system for 0<x<1

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Depressed photoemission from Görlich cathodes at high laser light intensities

B. W. Boreham; D. S. Newman; R. Höpfl; H. Hora

J. Appl. Phys. 78, 5848–5850 (1995) https://doi.org/10.1063/1.359655

Abstract

View articletitled, Depressed photoemission from Görlich cathodes at high laser light intensities

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Modeling of YBa₂Cu₃O₇ weak links produced by oxygen‐ion modification

S. S. Tinchev

J. Appl. Phys. 78, 5851–5853 (1995) https://doi.org/10.1063/1.359656

Abstract

View articletitled, Modeling of YBa2Cu3O7 weak links produced by oxygen‐ion modification

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Comment on ‘‘Equation of state of aluminum nitride and its shock response’’ [J. Appl. Phys. 76, 4077 (1994)]

Z. Rosenberg; N. S. Brar

J. Appl. Phys. 78, 5854–5856 (1995) https://doi.org/10.1063/1.359620

Abstract

View articletitled, Comment on ‘‘Equation of state of aluminum nitride and its shock response’’ [J. Appl. Phys. 76, 4077 (1994)]

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Reply to ‘‘Comment on ‘Equation of state of aluminum nitride and its shock response’ ’’ [J. Appl. Phys. 78, 5854 (1995)]

Dattatraya P. Dandekar; A. Abbate; J. Frankel

J. Appl. Phys. 78, 5857–5858 (1995) https://doi.org/10.1063/1.359621

Abstract

View articletitled, Reply to ‘‘Comment on ‘Equation of state of aluminum nitride and its shock response’ ’’ [J. Appl. Phys. 78, 5854 (1995)]

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