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The effects of ion species and target temperature on topography development on ion bombarded Si
J. Appl. Phys. 78, 3559–3565 (1995)
https://doi.org/10.1063/1.359931
Simulation of the effect of bulk vacancy diffusion on the shape of sputtered films deposited onto trenches and vias
J. Appl. Phys. 78, 3572–3579 (1995)
https://doi.org/10.1063/1.360708
Transport and centering of high current electron beams in neutral gas filled cells
J. Appl. Phys. 78, 3580–3591 (1995)
https://doi.org/10.1063/1.359933
Passive Q switching and mode‐locking of Er:glass lasers using VO2 mirrors
J. Appl. Phys. 78, 3592–3599 (1995)
https://doi.org/10.1063/1.359934
Microcavity effects on the spontaneous emission from InGaAs/GaAs quantum wells
J. Appl. Phys. 78, 3605–3609 (1995)
https://doi.org/10.1063/1.359936
Measurement of linewidths of Ne‐like germanium soft x‐ray laser in slab targets
J. Appl. Phys. 78, 3610–3616 (1995)
https://doi.org/10.1063/1.359937
Gain characteristics of a high concentration Er3+‐doped phosphate glass waveguide
J. Appl. Phys. 78, 3617–3621 (1995)
https://doi.org/10.1063/1.359938
Effects of hydrostatic pressure on dopant diffusion in silicon
J. Appl. Phys. 78, 3664–3670 (1995)
https://doi.org/10.1063/1.359944
A technology oriented model for transient diffusion and activation of boron in silicon
J. Appl. Phys. 78, 3671–3679 (1995)
https://doi.org/10.1063/1.360748
Antisite defects created in neutron irradiated GaP crystals
J. Appl. Phys. 78, 3680–3685 (1995)
https://doi.org/10.1063/1.359945
Comparison between deep level defects in GaAs induced by gamma, 1 MeV electron, and neutron irradiation
J. Appl. Phys. 78, 3686–3690 (1995)
https://doi.org/10.1063/1.359946
Elastic strain relaxation in GaN–AlN–GaN semiconductor–insulator–semiconductor structures
J. Appl. Phys. 78, 3691–3696 (1995)
https://doi.org/10.1063/1.359947
Quantum‐well intermixing for optoelectronic integration using high energy ion implantation
S. Charbonneau; P. J. Poole; P. G. Piva; G. C. Aers; E. S. Koteles; M. Fallahi; J.‐J. He; J. P. McCaffrey; M. Buchanan; M. Dion; R. D. Goldberg; I. V. Mitchell
J. Appl. Phys. 78, 3697–3705 (1995)
https://doi.org/10.1063/1.359948
Intermixing produced by ion implantation: Case of II–VI semiconductor multilayers
J. Appl. Phys. 78, 3706–3713 (1995)
https://doi.org/10.1063/1.359949
Determination of charge distribution volume in electron irradiated insulators by scanning electron microscope
J. Appl. Phys. 78, 3714–3718 (1995)
https://doi.org/10.1063/1.359950
Exposure of space material insulators to energetic ions
Hirokazu Tahara; Lulu Zhang; Miki Hiramatsu; Toshiaki Yasui; Takao Yoshikawa; Yuichi Setsuhara; Shoji Miyake
J. Appl. Phys. 78, 3719–3723 (1995)
https://doi.org/10.1063/1.359951
The electromigration short‐length effect in Ti‐AlCu‐Ti metallization with tungsten studs
J. Appl. Phys. 78, 3756–3768 (1995)
https://doi.org/10.1063/1.360749
Low filament temperature deposition of a‐Si:H by hot‐wire chemical vapor deposition
J. Appl. Phys. 78, 3776–3783 (1995)
https://doi.org/10.1063/1.359957
Crystallinity and average grain size of films grown by chemical vapor deposition
J. Appl. Phys. 78, 3809–3811 (1995)
https://doi.org/10.1063/1.359895
Growth textures of thick sputtered films and multilayers assessed via synchrotron transmission Laue
J. Appl. Phys. 78, 3812–3819 (1995)
https://doi.org/10.1063/1.360746
Extensions of thermal grooving for arbitrary grain‐boundary flux
J. Appl. Phys. 78, 3833–3838 (1995)
https://doi.org/10.1063/1.359898
On the compensation mechanism in high‐resistivity 6H–SiC doped with vanadium
J. Appl. Phys. 78, 3839–3842 (1995)
https://doi.org/10.1063/1.359899
Band offsets and optical bowings of chalcopyrites and Zn‐based II‐VI alloys
J. Appl. Phys. 78, 3846–3856 (1995)
https://doi.org/10.1063/1.359901
The effects of oxygen and defects on the deep‐level properties of Er in crystalline Si
J. Appl. Phys. 78, 3867–3873 (1995)
https://doi.org/10.1063/1.359903
The erbium‐impurity interaction and its effects on the 1.54 μm luminescence of Er3+ in crystalline silicon
J. Appl. Phys. 78, 3874–3882 (1995)
https://doi.org/10.1063/1.359904
Mechanism for stress‐induced leakage currents in thin silicon dioxide films
J. Appl. Phys. 78, 3883–3894 (1995)
https://doi.org/10.1063/1.359905
Structural and electronic transport properties of ReSi2−δ single crystals
J. Appl. Phys. 78, 3902–3907 (1995)
https://doi.org/10.1063/1.360707
Thermally stimulated currents in CdTe polycrystalline films
R. Ramírez‐Bon; F. J. Espinoza‐Beltrán; O. Vigil; O. Zelaya‐Angel; F. Sánchez‐Sinencio; J. G. Mendoza‐Alvarez; D. Stolik
J. Appl. Phys. 78, 3908–3911 (1995)
https://doi.org/10.1063/1.359907
The low electric field conduction mechanism of silicon oxide‐silicon nitride‐silicon oxide interpoly‐Si dielectrics
J. Appl. Phys. 78, 3912–3914 (1995)
https://doi.org/10.1063/1.359908
Properties of silicon‐tin alloys prepared by pulsed laser deposition
J. Appl. Phys. 78, 3915–3919 (1995)
https://doi.org/10.1063/1.359909
Schottky barriers on anodic‐sulfide‐passivated GaAs and their stability
J. Appl. Phys. 78, 3920–3924 (1995)
https://doi.org/10.1063/1.359910
Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum‐well lasers
J. Appl. Phys. 78, 3925–3930 (1995)
https://doi.org/10.1063/1.359911
Subband quantum scattering times for AlGaAs/GaAs obtained using digital filtering
J. Appl. Phys. 78, 3940–3944 (1995)
https://doi.org/10.1063/1.359913
Electronic conductivity of hydrogenated nanocrystalline silicon films
J. Appl. Phys. 78, 3945–3948 (1995)
https://doi.org/10.1063/1.359914
Magnetization processes in samples with modulated anisotropy under the action of nonuniform magnetic fields
J. Appl. Phys. 78, 3961–3964 (1995)
https://doi.org/10.1063/1.359917
Specific heat of YCo12B6 and GdCo12B6 intermetallics
J. Appl. Phys. 78, 3980–3982 (1995)
https://doi.org/10.1063/1.360747
Frequency dispersion and temperature variation of complex permeability of Ni‐Zn ferrite composite materials
J. Appl. Phys. 78, 3983–3991 (1995)
https://doi.org/10.1063/1.359919
Ferromagnetic resonance studies of Fe/Ni and Fe/CoNbZr multilayers: Model and experiments
J. Appl. Phys. 78, 3992–3998 (1995)
https://doi.org/10.1063/1.359920
A theoretical consideration of the dielectric behaviors of ferrofluid subjected to a magnetic field
J. Appl. Phys. 78, 3999–4002 (1995)
https://doi.org/10.1063/1.359921
Modulation of excitonic reflectance at GaAs/GaAs interfaces
J. Appl. Phys. 78, 4011–4014 (1995)
https://doi.org/10.1063/1.359923
Visible light emission from thin films containing Si, O, N, and H
J. Appl. Phys. 78, 4020–4030 (1995)
https://doi.org/10.1063/1.359925
Strain‐induced shift in photoluminescence energy in In0.2Ga0.8As/GaAs quantum wires
J. Appl. Phys. 78, 4031–4034 (1995)
https://doi.org/10.1063/1.359926
Photoreflectance temperature dependence of graded InAlAs/InGaAs heterojunction bipolar transistor layers
J. Appl. Phys. 78, 4035–4038 (1995)
https://doi.org/10.1063/1.359927
Effect of rapid thermal annealing on the photoluminescence properties of SiGe/Si heterostructures
J. Appl. Phys. 78, 4039–4045 (1995)
https://doi.org/10.1063/1.359860
Carrier‐density‐independent radiative constant in 1.3 μm buried heterostructure lasers
J. Appl. Phys. 78, 4046–4053 (1995)
https://doi.org/10.1063/1.359861
Calculation of the magnetic susceptibility and the Verdet constant in neodymium trifluoride
J. Appl. Phys. 78, 4054–4059 (1995)
https://doi.org/10.1063/1.360704
Molecular‐beam‐epitaxy growth of CdTe on InSb (110) monitored in situ by Raman spectroscopy
J. Appl. Phys. 78, 4060–4065 (1995)
https://doi.org/10.1063/1.359862
Correlation between the Cu‐related luminescent center and a deep level in silicon
J. Appl. Phys. 78, 4066–4068 (1995)
https://doi.org/10.1063/1.359863
Dielectric tensor characterization and evaluation of several magneto‐optical recording media
J. Appl. Phys. 78, 4076–4090 (1995)
https://doi.org/10.1063/1.359865
Al intermediate oxidation states observed by core level photoemission spectroscopy
J. Appl. Phys. 78, 4091–4098 (1995)
https://doi.org/10.1063/1.359866
Copper nitride thin films prepared by radio‐frequency reactive sputtering
J. Appl. Phys. 78, 4104–4107 (1995)
https://doi.org/10.1063/1.359868
Experimental results of photothermal microstructural depth profiling
J. Appl. Phys. 78, 4108–4111 (1995)
https://doi.org/10.1063/1.359869
The formation of ternary compound Fe3Mo3C by ball milling
J. Appl. Phys. 78, 4118–4122 (1995)
https://doi.org/10.1063/1.360705
Pulsed laser deposition of diamond‐like amorphous carbon films from graphite and polycarbonate targets
J. Appl. Phys. 78, 4123–4130 (1995)
https://doi.org/10.1063/1.359871
Chemical oxidation of hydrogen passivated Si(111) surfaces in H2O2
J. Appl. Phys. 78, 4131–4136 (1995)
https://doi.org/10.1063/1.359872
A numerical model for the calculation of the growth velocity of nonisothermal parabolic dendrites
J. Appl. Phys. 78, 4137–4143 (1995)
https://doi.org/10.1063/1.359873
Growth of diamond films using an enclosed combustion flame
J. Appl. Phys. 78, 4144–4156 (1995)
https://doi.org/10.1063/1.359874
Explanation of spurious features in tungsten deposition using an atomic momentum model
J. Appl. Phys. 78, 4157–4163 (1995)
https://doi.org/10.1063/1.359875
Spectroscopic ellipsometry studies of very thin thermally grown SiO2 films: Influence of oxidation procedure on oxide quality and stress
S. Boultadakis; S. Logothetidis; A. Papadopoulos; N. Vouroutzis; Ph. Zorba; D. Girginoudi; A. Thanailakis
J. Appl. Phys. 78, 4164–4173 (1995)
https://doi.org/10.1063/1.359876
Nuclear‐magnetic‐resonance characterization of doped SiO2 films used in integrated circuits
J. Appl. Phys. 78, 4174–4182 (1995)
https://doi.org/10.1063/1.359877
On the conductivity model for the electrorheological response of dielectric particles with a conducting film
J. Appl. Phys. 78, 4183–4188 (1995)
https://doi.org/10.1063/1.359878
Friction force microscopy study of lubricant thin films on thin‐film magnetic recording media
J. Appl. Phys. 78, 4189–4195 (1995)
https://doi.org/10.1063/1.359879
High efficiency AlGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition
J. Appl. Phys. 78, 4196–4199 (1995)
https://doi.org/10.1063/1.359880
Epitaxial YBa2Cu3O7−δ air‐bridge microbolometers on silicon substrates
J. Appl. Phys. 78, 4218–4221 (1995)
https://doi.org/10.1063/1.360745
Decrease of the number of the isolated emission center Mn2+ in an aged ZnS:Mn electroluminescent device
J. Appl. Phys. 78, 4253–4257 (1995)
https://doi.org/10.1063/1.359887
Blue electroluminescent devices based on soluble poly(p‐pyridine)
D. D. Gebler; Y. Z. Wang; J. W. Blatchford; S. W. Jessen; L.‐B. Lin; T. L. Gustafson; H. L. Wang; T. M. Swager; A. G. MacDiarmid; A. J. Epstein
J. Appl. Phys. 78, 4264–4266 (1995)
https://doi.org/10.1063/1.359890
Diamond‐like carbon films deposited by laser ablation using frozen acetylene targets
J. Appl. Phys. 78, 4267–4269 (1995)
https://doi.org/10.1063/1.359891
Raman scattering study of the longitudinal optical phonons in ZnSe–ZnS strained‐layer superlattices
J. Appl. Phys. 78, 4270–4272 (1995)
https://doi.org/10.1063/1.360706
Sulfur and hydrogen passivation effects on thermal stability of RuO2 Schottky contact on n‐type GaAs
J. Appl. Phys. 78, 4276–4278 (1995)
https://doi.org/10.1063/1.359826
Hydrogen‐induced quantum confinement in amorphous silicon
J. Appl. Phys. 78, 4282–4284 (1995)
https://doi.org/10.1063/1.359828
Photoreflectance of single buried Si1−xGex epilayers (0.12<x<0.24)
J. Appl. Phys. 78, 4285–4287 (1995)
https://doi.org/10.1063/1.359829
Femtosecond photoinduced dichroism in polydiacetylene 4bcmu film
J. Appl. Phys. 78, 4288–4290 (1995)
https://doi.org/10.1063/1.360702
Structure and resistivity of vacancy‐ordered Sr2Ti2O5 films in high‐Tc superconducting heterostructures
J. Appl. Phys. 78, 4291–4293 (1995)
https://doi.org/10.1063/1.359830
Lateral mode behavior of reactive‐ion‐etched stable‐resonator semiconductor lasers
J. Appl. Phys. 78, 4294–4296 (1995)
https://doi.org/10.1063/1.359831
Diffusion limited oxygen precipitation in silicon: Precipitate growth kinetics and phase formation
J. Appl. Phys. 78, 4297–4299 (1995)
https://doi.org/10.1063/1.359832
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Machine learning for thermal transport
Ruiqiang Guo, Bing-Yang Cao, et al.