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An eigenvalue method for open‐boundary quantum transmission problems
J. Appl. Phys. 78, 2177–2186 (1995)
https://doi.org/10.1063/1.360132
Measurement of the refractive indices of a ferroelectric liquid crystal
J. Appl. Phys. 78, 2187–2192 (1995)
https://doi.org/10.1063/1.360133
Raman effect in AlGaAs waveguides for subpicosecond pulses
J. Appl. Phys. 78, 2198–2203 (1995)
https://doi.org/10.1063/1.360135
Micron‐scale thermal characterizations of interfaces parallel or perpendicular to the surface
J. Appl. Phys. 78, 2208–2223 (1995)
https://doi.org/10.1063/1.360137
Controlling chaos in a model of thermal pulse combustion
J. Appl. Phys. 78, 2224–2232 (1995)
https://doi.org/10.1063/1.360138
Hybrid Monte Carlo‐fluid model of a direct current glow discharge
J. Appl. Phys. 78, 2233–2241 (1995)
https://doi.org/10.1063/1.360139
Atomic force microscope patterning on plasma deposited polyacetylene film
J. Appl. Phys. 78, 2242–2247 (1995)
https://doi.org/10.1063/1.360140
Copious electron emission from triglycine sulfate ferroelectric crystals
J. Appl. Phys. 78, 2248–2252 (1995)
https://doi.org/10.1063/1.360758
Melting dynamics in current‐carrying conductors and its effect on electrodynamic characteristics
J. Appl. Phys. 78, 2253–2259 (1995)
https://doi.org/10.1063/1.360141
Flux penetration of an aluminum liner during working fluid compression
J. Appl. Phys. 78, 2260–2264 (1995)
https://doi.org/10.1063/1.360142
Dissociation levels in fast‐axial‐flow CO2 lasers: A quantitative model
J. Appl. Phys. 78, 2265–2269 (1995)
https://doi.org/10.1063/1.360143
A two‐dimensional particle‐in‐cell simulation of an electron‐cyclotron‐resonance etching tool
J. Appl. Phys. 78, 2270–2278 (1995)
https://doi.org/10.1063/1.360144
Derivation and experimental verification of a particulate transport model for a glow discharge
J. Appl. Phys. 78, 2279–2287 (1995)
https://doi.org/10.1063/1.360145
Heat‐energy deposition in x‐ray interaction with materials application to Si and Be
J. Appl. Phys. 78, 2288–2297 (1995)
https://doi.org/10.1063/1.360146
Atomic transport and phase formation in the Sb/Al system induced by heavy‐ion bombardment
J. Appl. Phys. 78, 2303–2310 (1995)
https://doi.org/10.1063/1.360148
X‐ray standing waves as probes of surface structure: Incident beam energy effects
J. Appl. Phys. 78, 2311–2322 (1995)
https://doi.org/10.1063/1.360759
Structural characterization of SinC δ layers embedded in a silicon matrix
J. Appl. Phys. 78, 2323–2327 (1995)
https://doi.org/10.1063/1.360149
Damage induced by 90 MeV silicon ions in crystalline silicon
J. Appl. Phys. 78, 2328–2332 (1995)
https://doi.org/10.1063/1.360150
Role of phase boundaries in growth kinetics of new phase inclusions in annealed ion bombarded solids
J. Appl. Phys. 78, 2333–2337 (1995)
https://doi.org/10.1063/1.360151
The structure and crystallization characteristics of phase change optical disk material Ge1Sb2Te4
J. Appl. Phys. 78, 2338–2342 (1995)
https://doi.org/10.1063/1.360152
Bounds on the effective thermal‐expansion coefficient of a polycrystalline aggregate
J. Appl. Phys. 78, 2349–2354 (1995)
https://doi.org/10.1063/1.360154
Gallium‐implantation‐enhanced intermixing of close‐surface GaAs/AlAs/AlGaAs double‐barrier quantum wells
J. Appl. Phys. 78, 2355–2361 (1995)
https://doi.org/10.1063/1.360155
Phase transformations caused by spark planing of α‐Fe surfaces
J. Appl. Phys. 78, 2372–2375 (1995)
https://doi.org/10.1063/1.360158
Single crystal diamond deposition by laminar and turbulent acetylene‐oxygen flames
J. Appl. Phys. 78, 2376–2384 (1995)
https://doi.org/10.1063/1.360159
Determination of the hydrogen content in an evaporated Pd film by neutron interferometry
J. Appl. Phys. 78, 2398–2402 (1995)
https://doi.org/10.1063/1.360161
Native defects in low‐temperature GaAs and the effect of hydrogenation
J. Appl. Phys. 78, 2411–2422 (1995)
https://doi.org/10.1063/1.360163
Variation in stress with background pressure in sputtered Mo/Si multilayer films
J. Appl. Phys. 78, 2423–2430 (1995)
https://doi.org/10.1063/1.360164
Silicon incorporation in GaAs: From delta‐doping to monolayer insertion
J. Appl. Phys. 78, 2431–2434 (1995)
https://doi.org/10.1063/1.360165
Evolution of microstructure in nanocrystalline Mo‐Cu thin films during thermal annealing
J. Appl. Phys. 78, 2435–2440 (1995)
https://doi.org/10.1063/1.360756
Electron capture and emission by the Ti acceptor level in GaP
J. Appl. Phys. 78, 2441–2446 (1995)
https://doi.org/10.1063/1.360097
Site‐selective spectroscopy and determination of energy levels in Eu3+‐doped strontium fluorophosphate
J. Appl. Phys. 78, 2456–2467 (1995)
https://doi.org/10.1063/1.360099
Structure of the DX state formed by donors in (Al,Ga)As and Ga(As,P)
J. Appl. Phys. 78, 2468–2477 (1995)
https://doi.org/10.1063/1.360100
Stimulated emission and laser oscillation from light‐hole excitonic state in a ZnSe‐Zn0.8Cd0.2Se superlattice
J. Appl. Phys. 78, 2478–2481 (1995)
https://doi.org/10.1063/1.360101
Theory of optical gain in strained‐layer quantum wells within the 6×6 Luttinger–Kohn model
J. Appl. Phys. 78, 2489–2497 (1995)
https://doi.org/10.1063/1.360103
Low‐frequency noise measurements of AlxGa1−xAs/InyGa1−y As/GaAs high electron mobility transistors
J. Appl. Phys. 78, 2509–2514 (1995)
https://doi.org/10.1063/1.360106
Determination of free carrier concentration in n‐GaInP alloy by Raman scattering
J. Appl. Phys. 78, 2515–2519 (1995)
https://doi.org/10.1063/1.360715
Possible performance of capacitively coupled single‐electron transistors in digital circuits
J. Appl. Phys. 78, 2520–2530 (1995)
https://doi.org/10.1063/1.360107
Photoemission investigation of the ZnSe/CdTe heterojunction band discontinuity
J. Appl. Phys. 78, 2537–2540 (1995)
https://doi.org/10.1063/1.360109
Wannier states and optical transitions in a ‘‘diatomic’’ semiconductor superlattice
J. Appl. Phys. 78, 2541–2546 (1995)
https://doi.org/10.1063/1.360110
A statistical model of quantum dot arrays with Coulomb coupling
J. Appl. Phys. 78, 2547–2549 (1995)
https://doi.org/10.1063/1.360111
Photoelectric phenomena in metal‐insulator‐semiconductor structures at low electric fields in the insulator
J. Appl. Phys. 78, 2550–2557 (1995)
https://doi.org/10.1063/1.360112
A monolithic nonlinear transmission line system for the experimental study of lattice solitons
J. Appl. Phys. 78, 2558–2564 (1995)
https://doi.org/10.1063/1.360113
Low frequency noise characterization of self‐aligned InP/InGaAs heterojunction bipolar transistors
J. Appl. Phys. 78, 2565–2567 (1995)
https://doi.org/10.1063/1.360114
Positron study of plasma‐enhanced chemical vapor deposited silicon nitride films
J. Appl. Phys. 78, 2568–2574 (1995)
https://doi.org/10.1063/1.360115
Enhanced flux pinning in HgBa2CuO4+x by neutron irradiation and its relationship to magnetic anisotropy
J. Appl. Phys. 78, 2575–2580 (1995)
https://doi.org/10.1063/1.360116
Current‐voltage characteristics of unbalanced superconducting Wheatstone bridges
J. Appl. Phys. 78, 2581–2584 (1995)
https://doi.org/10.1063/1.360117
Influence of Cr3+‐substitution on the electrical and magnetic properties of Ni1.05Sn0.05Fe1.9O4 ferrites
J. Appl. Phys. 78, 2585–2589 (1995)
https://doi.org/10.1063/1.360757
Stress dependence of the magnetization process in amorphous wires and ribbons
J. Appl. Phys. 78, 2590–2595 (1995)
https://doi.org/10.1063/1.360118
Crystallographic characterization of tetragonal (Pb,La)TiO3 epitaxial thin films grown by pulsed laser deposition
J. Appl. Phys. 78, 2601–2606 (1995)
https://doi.org/10.1063/1.360120
Substrate effects on the structure of epitaxial PbTiO3 thin films prepared on MgO, LaAlO3, and SrTiO3 by metalorganic chemical‐vapor deposition
C. M. Foster; Z. Li; M. Buckett; D. Miller; P. M. Baldo; L. E. Rehn; G. R. Bai; D. Guo; H. You; K. L. Merkle
J. Appl. Phys. 78, 2607–2622 (1995)
https://doi.org/10.1063/1.360121
Identification of passive layer in ferroelectric thin films from their switching parameters
J. Appl. Phys. 78, 2623–2630 (1995)
https://doi.org/10.1063/1.360122
The hydridation and nitridation of GeSi oxide annealed in ammonia
J. Appl. Phys. 78, 2631–2634 (1995)
https://doi.org/10.1063/1.360123
Temperature dependence of the Fowler–Nordheim current in metal‐oxide‐degenerate semiconductor structures
J. Appl. Phys. 78, 2635–2641 (1995)
https://doi.org/10.1063/1.360124
Erbium in oxygen‐doped silicon: Optical excitation
J. Appl. Phys. 78, 2642–2650 (1995)
https://doi.org/10.1063/1.360125
Temperature dependence and dispersion of electro‐optic and elasto‐optic effect in perovskite crystals
J. Appl. Phys. 78, 2651–2658 (1995)
https://doi.org/10.1063/1.360126
Photoconductivity and n‐ to p‐type transition in silicon planar‐doped GaAs structures with a doped cap layer
J. Appl. Phys. 78, 2659–2665 (1995)
https://doi.org/10.1063/1.360127
Concentration‐dependent near and above band edge absorption in doped InP and its effect on solar cell modeling
J. Appl. Phys. 78, 2666–2670 (1995)
https://doi.org/10.1063/1.360128
Oxygen defect center red room temperature photoluminescence from freshly etched and oxidized porous silicon
J. Appl. Phys. 78, 2671–2674 (1995)
https://doi.org/10.1063/1.360716
Importance of poly(N‐vinylcarbazole) dopant to poly(3‐octylthiophene) electroluminescence
J. Appl. Phys. 78, 2679–2683 (1995)
https://doi.org/10.1063/1.360130
Optical‐absorption study of RuS2−xSex single crystals
J. Appl. Phys. 78, 2691–2696 (1995)
https://doi.org/10.1063/1.360064
The properties of magneto‐optical MnBiR (R=In, Ge, and Sn) thin films
J. Appl. Phys. 78, 2697–2699 (1995)
https://doi.org/10.1063/1.360713
Defect‐enhanced electron field emission from chemical vapor deposited diamond
J. Appl. Phys. 78, 2707–2711 (1995)
https://doi.org/10.1063/1.360066
Pattern dependence in selective epitaxial Si1−xGex growth using reduced‐pressure chemical vapor deposition
J. Appl. Phys. 78, 2716–2719 (1995)
https://doi.org/10.1063/1.360068
Reaction kinetics in synchrotron‐radiation‐excited Si epitaxy with disilane. I. Atomic layer epitaxy
J. Appl. Phys. 78, 2725–2739 (1995)
https://doi.org/10.1063/1.360070
Reaction kinetics in synchrotron‐radiation‐excited Si epitaxy with disilane. II. Photochemical‐vapor deposition
J. Appl. Phys. 78, 2740–2750 (1995)
https://doi.org/10.1063/1.360071
1.54 μm photoluminescence of in situ erbium‐oxygen co‐doped silicon films grown by ion‐beam epitaxy
J. Appl. Phys. 78, 2751–2757 (1995)
https://doi.org/10.1063/1.360072
A mild electrochemical sulfur passivation method for GaAs(100) surfaces
J. Appl. Phys. 78, 2764–2766 (1995)
https://doi.org/10.1063/1.360074
Growth kinetics of oxides during furnace oxidation of Si in N2O ambient
J. Appl. Phys. 78, 2767–2774 (1995)
https://doi.org/10.1063/1.360075
Statistical thermodynamic foundation for photovoltaic and photothermal conversion. I. Theory
J. Appl. Phys. 78, 2782–2792 (1995)
https://doi.org/10.1063/1.360755
Effect of asymmetric barriers on performances of GaAs/AlGaAs quantum well detectors
J. Appl. Phys. 78, 2803–2807 (1995)
https://doi.org/10.1063/1.360078
Stable off‐axis electron orbits in a longitudinal‐wiggler free‐electron laser
J. Appl. Phys. 78, 2811–2816 (1995)
https://doi.org/10.1063/1.360080
Characterization of photon recycling in thin crystalline GaAs light emitting diodes
J. Appl. Phys. 78, 2817–2822 (1995)
https://doi.org/10.1063/1.360081
Optimization of island size in single electron tunneling devices: Experiment and theory
J. Appl. Phys. 78, 2830–2836 (1995)
https://doi.org/10.1063/1.360083
Generation of the slow wave to characterize air filled porous fabrics
J. Appl. Phys. 78, 2843–2845 (1995)
https://doi.org/10.1063/1.360714
Depletion width and capacitance transient formulas for deep traps of high concentration
J. Appl. Phys. 78, 2848–2850 (1995)
https://doi.org/10.1063/1.360086
ZnMgSeS/ZnSSe/CdZnSe strained quantum well lasers grown on (511)A orientation
J. Appl. Phys. 78, 2851–2853 (1995)
https://doi.org/10.1063/1.360087
Step bunching on {111} facets in the selective growth of GaAs by metalorganic vapor phase epitaxy
J. Appl. Phys. 78, 2854–2856 (1995)
https://doi.org/10.1063/1.360088
Electron paramagnetic resonance of dangling bond centers in vacuum‐annealed porous silicon
J. Appl. Phys. 78, 2857–2859 (1995)
https://doi.org/10.1063/1.360089
Spraying fine fluid particles in insulating fluid systems by electrostatic polarization forces
J. Appl. Phys. 78, 2860–2862 (1995)
https://doi.org/10.1063/1.360090
Structure and magnetic properties of CeFe13−xSix compounds
J. Appl. Phys. 78, 2866–2867 (1995)
https://doi.org/10.1063/1.360092
On the doubly resonant difference frequency mixing in an asymmetric quantum well structure
J. Appl. Phys. 78, 2868–2870 (1995)
https://doi.org/10.1063/1.360093
Electrical properties of BC2N thin films prepared by chemical vapor deposition
J. Appl. Phys. 78, 2880–2882 (1995)
https://doi.org/10.1063/1.360029
Generation‐recombination noise in submicron semiconductor layers: Influence of the edges
J. Appl. Phys. 78, 2883–2885 (1995)
https://doi.org/10.1063/1.360030
Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy
J. Appl. Phys. 78, 2886–2888 (1995)
https://doi.org/10.1063/1.360031
Angular‐selective optical transmittance of highly transparent Al‐oxide‐based films made by oblique‐angle sputtering
J. Appl. Phys. 78, 2894–2896 (1995)
https://doi.org/10.1063/1.360034
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.