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Thermodynamic analysis of spherulitic growth in semicrystalline poly(ethylene oxide)

G. Di Marco; M. Lanza; M. Pieruccini

J. Appl. Phys. 78, 1401–1405 (1995) https://doi.org/10.1063/1.360295

Abstract

View articletitled, Thermodynamic analysis of spherulitic growth in semicrystalline poly(ethylene oxide)

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Fast positronium formation and dissociation at surfaces

D. W. Gidley; D. N. McKinsey; P. W. Zitzewitz

J. Appl. Phys. 78, 1406–1410 (1995) https://doi.org/10.1063/1.360296

Abstract

View articletitled, Fast positronium formation and dissociation at surfaces

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Comparison of stepped‐well and square‐well multiple‐quantum‐well optical modulators

T. K. Woodward; J. E. Cunningham; W. Y. Jan

J. Appl. Phys. 78, 1411–1414 (1995) https://doi.org/10.1063/1.360297

Abstract

View articletitled, Comparison of stepped‐well and square‐well multiple‐quantum‐well optical modulators

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Theoretical investigation of fabrication‐related disorder on the properties of photonic crystals

Shanhui Fan; Pierre R. Villeneuve; J. D. Joannopoulos

J. Appl. Phys. 78, 1415–1418 (1995) https://doi.org/10.1063/1.360298

Abstract

View articletitled, Theoretical investigation of fabrication‐related disorder on the properties of photonic crystals

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Estimation of strain arising from the assembling process and influence of assembling materials on performance of laser diodes

Kimio Shigihara; Yutaka Nagai; Shoichi Karakida; Masao Aiga; Mutsuyuki Otsubo; Kenji Ikeda

J. Appl. Phys. 78, 1419–1423 (1995) https://doi.org/10.1063/1.360299

Abstract

View articletitled, Estimation of strain arising from the assembling process and influence of assembling materials on performance of laser diodes

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Analysis of heat transfer to a spherical particle from continuum plasma

M. A. Jog

J. Appl. Phys. 78, 1424–1429 (1995) https://doi.org/10.1063/1.360300

Abstract

View articletitled, Analysis of heat transfer to a spherical particle from continuum plasma

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Thermodynamics of latent heat storage in parallel or in series with a heat engine

Chaim Charach; Massimo Conti

J. Appl. Phys. 78, 1430–1437 (1995) https://doi.org/10.1063/1.360301

Abstract

View articletitled, Thermodynamics of latent heat storage in parallel or in series with a heat engine

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In situ measurements of changes in the structure and in the excess charge‐carrier kinetics at the silicon surface during hydrogen and helium plasma exposure

H. C. Neitzert; N. Layadi; P. Roca i Cabarrocas; R. Vanderhaghen; M. Kunst

J. Appl. Phys. 78, 1438–1445 (1995) https://doi.org/10.1063/1.360302

Abstract

View articletitled, In situ measurements of changes in the structure and in the excess charge‐carrier kinetics at the silicon surface during hydrogen and helium plasma exposure

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Analytic model of power deposition in inductively coupled plasma sources

V. Vahedi; M. A. Lieberman; G. DiPeso; T. D. Rognlien; D. Hewett

J. Appl. Phys. 78, 1446–1458 (1995) https://doi.org/10.1063/1.360723

Abstract

View articletitled, Analytic model of power deposition in inductively coupled plasma sources

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Effects of gas flame annealing on the structure of poly‐Si films

Y. Masaki; M. Suzumi; W. F. Qu; Y. Kakimoto; A. Kitagawa; M. Suzuki

J. Appl. Phys. 78, 1459–1464 (1995) https://doi.org/10.1063/1.360303

Abstract

View articletitled, Effects of gas flame annealing on the structure of poly‐Si films

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Harmonic response of near‐contact scanning force microscopy

G. Y. Chen; R. J. Warmack; A. Huang; T. Thundat

J. Appl. Phys. 78, 1465–1469 (1995) https://doi.org/10.1063/1.360304

Abstract

View articletitled, Harmonic response of near‐contact scanning force microscopy

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Annealing dynamics of arsenic‐rich GaAs formed by ion implantation

H. Fujioka; J. Krueger; A. Prasad; X. Liu; E. R. Weber; A. K. Verma

J. Appl. Phys. 78, 1470–1475 (1995) https://doi.org/10.1063/1.360235

Abstract

View articletitled, Annealing dynamics of arsenic‐rich GaAs formed by ion implantation

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Radiation resistance of compound semiconductor solar cells

Masafumi Yamaguchi

J. Appl. Phys. 78, 1476–1480 (1995) https://doi.org/10.1063/1.360236

Abstract

View articletitled, Radiation resistance of compound semiconductor solar cells

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Characterization of deep levels and carrier compensation created by proton irradiation in undoped GaAs

H. H. Tan; J. S. Williams; C. Jagadish

J. Appl. Phys. 78, 1481–1487 (1995) https://doi.org/10.1063/1.360237

Abstract

View articletitled, Characterization of deep levels and carrier compensation created by proton irradiation in undoped GaAs

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Structure damage in reactive‐ion and laser etched InP/GalnAs microstructures

J. J. Dubowski; B. E. Rosenquist; D. J. Lockwood; H. J. Labbé; A. P. Roth; C. Lacelle; M. Davies; R. Barber; B. Mason; G. I. Sproule

J. Appl. Phys. 78, 1488–1491 (1995) https://doi.org/10.1063/1.360763

Abstract

View articletitled, Structure damage in reactive‐ion and laser etched InP/GalnAs microstructures

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Segregation behavior during silicon single‐crystal growth from the melt

Teruo Izumi

J. Appl. Phys. 78, 1492–1494 (1995) https://doi.org/10.1063/1.360238

Abstract

View articletitled, Segregation behavior during silicon single‐crystal growth from the melt

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Temperature dependence of dislocation efficiency as sinks for self‐interstitials in silicon as measured by gold diffusion

E. Yakimov; G. Mariani; B. Pichaud

J. Appl. Phys. 78, 1495–1499 (1995) https://doi.org/10.1063/1.360239

Abstract

View articletitled, Temperature dependence of dislocation efficiency as sinks for self‐interstitials in silicon as measured by gold diffusion

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Nitrogen ion implantation with energy scanning mode into Zr

S. Miyagawa; K. Saitoh; M. Ikeyama; S. Nakao; Y. Miyagawa

J. Appl. Phys. 78, 1500–1503 (1995) https://doi.org/10.1063/1.360240

Abstract

View articletitled, Nitrogen ion implantation with energy scanning mode into Zr

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Characteristics of photoacoustic displacement for silicon damaged by ion implantation

Hiroyuki Takamatsu; Shingo Sumie; Tsutomu Morimoto; Yutaka Kawata; Takeshi Muraki; Tohru Hara

J. Appl. Phys. 78, 1504–1509 (1995) https://doi.org/10.1063/1.360241

Abstract

View articletitled, Characteristics of photoacoustic displacement for silicon damaged by ion implantation

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Study of various types of diamonds by measurements of double crystal x‐ray diffraction and positron annihilation

S. Fujii; Y. Nishibayashi; S. Shikata; A. Uedono; S. Tanigawa

J. Appl. Phys. 78, 1510–1513 (1995) https://doi.org/10.1063/1.360242

Abstract

View articletitled, Study of various types of diamonds by measurements of double crystal x‐ray diffraction and positron annihilation

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Arsenic‐related defects in SiO₂

S. Alexandrova

J. Appl. Phys. 78, 1514–1518 (1995) https://doi.org/10.1063/1.360243

Abstract

View articletitled, Arsenic‐related defects in SiO2

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Annealing‐environment effects in the epitaxial regrowth of ion‐beam‐amorphized layers on CaTiO₃

J. Rankin; J. C. McCallum; L. A. Boatner

J. Appl. Phys. 78, 1519–1527 (1995) https://doi.org/10.1063/1.360244

Abstract

View articletitled, Annealing‐environment effects in the epitaxial regrowth of ion‐beam‐amorphized layers on CaTiO3

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Investigation of reactive‐ion‐etch‐induced damage of InP/InGaAs multiple quantum wells by photoluminescence

O. M. Steffensen; D. Birkedal; J. Hanberg; O. Albrektsen; S. W. Pang

J. Appl. Phys. 78, 1528–1532 (1995) https://doi.org/10.1063/1.360245

Abstract

View articletitled, Investigation of reactive‐ion‐etch‐induced damage of InP/InGaAs multiple quantum wells by photoluminescence

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Effects of grain shape anisotropy, porosity, and microcracks on the elastic and dielectric constants of polycrystalline piezoelectric ceramics

Martin L. Dunn

J. Appl. Phys. 78, 1533–1541 (1995) https://doi.org/10.1063/1.360246

Abstract

View articletitled, Effects of grain shape anisotropy, porosity, and microcracks on the elastic and dielectric constants of polycrystalline piezoelectric ceramics

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Orthotropic elastic constants of a boron‐aluminum fiber‐reinforced composite: An acoustic‐resonance‐spectroscopy study

Hassel Ledbetter; Christopher Fortunko; Paul Heyliger

J. Appl. Phys. 78, 1542–1546 (1995) https://doi.org/10.1063/1.360247

Abstract

View articletitled, Orthotropic elastic constants of a boron‐aluminum fiber‐reinforced composite: An acoustic‐resonance‐spectroscopy study

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Absolute stress determination in orthotropic materials from angular dependences of ultrasonic velocities

A. D. Degtyar; S. I. Rokhlin

J. Appl. Phys. 78, 1547–1556 (1995) https://doi.org/10.1063/1.360248

Abstract

View articletitled, Absolute stress determination in orthotropic materials from angular dependences of ultrasonic velocities

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Study of tensile deformation in shocked Z‐cut, α‐quartz using time resolved Raman spectroscopy

S. M. Gallivan; Y. M. Gupta

J. Appl. Phys. 78, 1557–1564 (1995) https://doi.org/10.1063/1.360249

Abstract

View articletitled, Study of tensile deformation in shocked Z‐cut, α‐quartz using time resolved Raman spectroscopy

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Propagation of surface acoustic waves across the randomly rough surface of an anisotropic elastic medium

A. V. Shchegrov

J. Appl. Phys. 78, 1565–1574 (1995) https://doi.org/10.1063/1.360250

Abstract

View articletitled, Propagation of surface acoustic waves across the randomly rough surface of an anisotropic elastic medium

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Germanium partitioning in silicon during rapid solidification

D. P. Brunco; Michael O. Thompson; D. E. Hoglund; M. J. Aziz; H.‐J. Gossmann

J. Appl. Phys. 78, 1575–1582 (1995) https://doi.org/10.1063/1.360251

Abstract

View articletitled, Germanium partitioning in silicon during rapid solidification

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Thermal expansion of textured polycrystalline aggregates

Martin L. Dunn; Hassel Ledbetter

J. Appl. Phys. 78, 1583–1588 (1995) https://doi.org/10.1063/1.360734

Abstract

View articletitled, Thermal expansion of textured polycrystalline aggregates

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On the nucleation of an intermediate phase at an interface in the presence of a concentration gradient

J. J. Hoyt; L. N. Brush

J. Appl. Phys. 78, 1589–1594 (1995) https://doi.org/10.1063/1.360252

Abstract

View articletitled, On the nucleation of an intermediate phase at an interface in the presence of a concentration gradient

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Modeling the diffusion of grown‐in Be in molecular beam epitaxy GaAs

J. C. Hu; M. D. Deal; J. D. Plummer

J. Appl. Phys. 78, 1595–1605 (1995) https://doi.org/10.1063/1.360253

Abstract

View articletitled, Modeling the diffusion of grown‐in Be in molecular beam epitaxy GaAs

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Modeling the diffusion of implanted Be in GaAs

J. C. Hu; M. D. Deal; J. D. Plummer

J. Appl. Phys. 78, 1606–1613 (1995) https://doi.org/10.1063/1.360254

Abstract

View articletitled, Modeling the diffusion of implanted Be in GaAs

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High‐resolution determination of the stress in individual interconnect lines and the variation due to electromigration

Qing Ma; S. Chiras; D. R. Clarke; Z. Suo

J. Appl. Phys. 78, 1614–1622 (1995) https://doi.org/10.1063/1.360255

Abstract

View articletitled, High‐resolution determination of the stress in individual interconnect lines and the variation due to electromigration

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Phosphorus‐enhanced diffusion of antimony due to generation of self‐interstitials

P. Pichler; H. Ryssel; R. Ploss; C. Bonafos; A. Claverie

J. Appl. Phys. 78, 1623–1629 (1995) https://doi.org/10.1063/1.360256

Abstract

View articletitled, Phosphorus‐enhanced diffusion of antimony due to generation of self‐interstitials

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Edge‐induced stress and strain in stripe films and substrates: A two‐dimensional finite element calculation

S. C. Jain; A. H. Harker; A. Atkinson; K. Pinardi

J. Appl. Phys. 78, 1630–1637 (1995) https://doi.org/10.1063/1.360257

Abstract

View articletitled, Edge‐induced stress and strain in stripe films and substrates: A two‐dimensional finite element calculation

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Gold clusters precipitation at the interface between Ni(Au) silicides and (111) silicon

D. Mangelinck; A. Correia; P. Gas; A. Grob; B. Pichaud

J. Appl. Phys. 78, 1638–1642 (1995) https://doi.org/10.1063/1.360258

Abstract

View articletitled, Gold clusters precipitation at the interface between Ni(Au) silicides and (111) silicon

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Surface damage of polymethylmethacrylate plates by ice and nylon ball impacts

Li‐Lih Wang; J. E. Field; Q. Sun; J. Liu

J. Appl. Phys. 78, 1643–1649 (1995) https://doi.org/10.1063/1.360259

Abstract

View articletitled, Surface damage of polymethylmethacrylate plates by ice and nylon ball impacts

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Infrared‐absorption spectroscopy of Si(100) and Si(111) surfaces after chemomechanical polishing

G. J. Pietsch; Y. J. Chabal; G. S. Higashi

J. Appl. Phys. 78, 1650–1658 (1995) https://doi.org/10.1063/1.360721

Abstract

View articletitled, Infrared‐absorption spectroscopy of Si(100) and Si(111) surfaces after chemomechanical polishing

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Si–C–H bonding in amorphous Si_1−xC_x:H film/substrate interfaces determined by real time infrared absorption during reactive magnetron sputter deposition

M. Katiyar; Y. H. Yang; J. R. Abelson

J. Appl. Phys. 78, 1659–1663 (1995) https://doi.org/10.1063/1.360260

Abstract

View articletitled, Si–C–H bonding in amorphous Si1−xCx:H film/substrate interfaces determined by real time infrared absorption during reactive magnetron sputter deposition

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Phosphorus cracking efficiency and flux transients from a valved effusion cell

F. G. Johnson; C. E. C. Wood

J. Appl. Phys. 78, 1664–1668 (1995) https://doi.org/10.1063/1.360261

Abstract

View articletitled, Phosphorus cracking efficiency and flux transients from a valved effusion cell

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Interface instability in an electric field

L. Klinger; L. Levin

J. Appl. Phys. 78, 1669–1672 (1995) https://doi.org/10.1063/1.360262

Abstract

View articletitled, Interface instability in an electric field

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Temperature dependence of the biaxial modulus, intrinsic stress and composition of plasma deposited silicon oxynitride films

David R. Harding; Linus U. T. Ogbuji; Mathieu J. Freeman

J. Appl. Phys. 78, 1673–1680 (1995) https://doi.org/10.1063/1.360263

Abstract

View articletitled, Temperature dependence of the biaxial modulus, intrinsic stress and composition of plasma deposited silicon oxynitride films

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X‐ray reflectivity studies of the effect of surfactant on the growth of GeSi superlattices

Ming Li; Q. Cui; S. F. Cui; L. Zhang; J. M. Zhou; Z. H. Mai; C. Dong; H. Chen; F. Wu

J. Appl. Phys. 78, 1681–1684 (1995) https://doi.org/10.1063/1.360264

Abstract

View articletitled, X‐ray reflectivity studies of the effect of surfactant on the growth of GeSi superlattices

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Improved photoluminescence properties of highly strained InGaAs/GaAs quantum wells grown by molecular‐beam epitaxy

Makoto Kudo; Tomoyoshi Mishima

J. Appl. Phys. 78, 1685–1688 (1995) https://doi.org/10.1063/1.360265

Abstract

View articletitled, Improved photoluminescence properties of highly strained InGaAs/GaAs quantum wells grown by molecular‐beam epitaxy

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Structural and magnetic properties of Co/face‐centered‐cubic Mn(001) multilayers

Q. Wang; N. Metoki; Ch. Morawe; Th. Zeidler; H. Zabel

J. Appl. Phys. 78, 1689–1695 (1995) https://doi.org/10.1063/1.360266

Abstract

View articletitled, Structural and magnetic properties of Co/face‐centered‐cubic Mn(001) multilayers

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Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. III. Interfacial defects and domain misorientations

J. S. Speck; A. C. Daykin; A. Seifert; A. E. Romanov; W. Pompe

J. Appl. Phys. 78, 1696–1706 (1995) https://doi.org/10.1063/1.360267

Abstract

View articletitled, Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. III. Interfacial defects and domain misorientations

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Structural characterization of ion‐beam synthesized NiSi₂ layers

M. F. Wu; J. De Wachter; A.‐M. Van Bavel; R. Moons; A. Vantomme; H. Pattyn; G. Langouche; H. Bender; J. Vanhellemont; K. Temst; Y. Bruynseraede

J. Appl. Phys. 78, 1707–1712 (1995) https://doi.org/10.1063/1.360268

Abstract

View articletitled, Structural characterization of ion‐beam synthesized NiSi2 layers

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Growth and characterization of PbS deposited on ferroelectric ceramics

I. Pintilie; E. Pentia; L. Pintilie; D. Petre; C. Constantin; T. Botila

J. Appl. Phys. 78, 1713–1718 (1995) https://doi.org/10.1063/1.360269

Abstract

View articletitled, Growth and characterization of PbS deposited on ferroelectric ceramics

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Formation of a large grain sized TiN layer using TiN_x, the epitaxial continuity at the Al/TiN interface, and its electromigration endurance in multilayered interconnection

Jeong Soo Byun; Kwan Goo Rha; Jae Jeong Kim; Woo Shik Kim; Hak Nam Kim; Hae Seok Cho; Hyeong Joon Kim

J. Appl. Phys. 78, 1719–1724 (1995) https://doi.org/10.1063/1.360200

Abstract

View articletitled, Formation of a large grain sized TiN layer using TiNx, the epitaxial continuity at the Al/TiN interface, and its electromigration endurance in multilayered interconnection

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Epitaxial growth of CoSi₂ layer on (100)Si and facet formation at the CoSi₂/Si interface

Jeong Soo Byun; Do‐Heyoung Kim; Woo Shik Kim; Hyeong Joon Kim

J. Appl. Phys. 78, 1725–1730 (1995) https://doi.org/10.1063/1.360201

Abstract

View articletitled, Epitaxial growth of CoSi2 layer on (100)Si and facet formation at the CoSi2/Si interface

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Radiative and nonradiative rates and deep levels in zinc selenide grown by molecular‐beam epitaxy

J. W. Allen; D. T. Reid; W. Sibbett; W. Sleat; Jia‐Zhen Zheng; D. Hommel; B. Jobst

J. Appl. Phys. 78, 1731–1736 (1995) https://doi.org/10.1063/1.360202

Abstract

View articletitled, Radiative and nonradiative rates and deep levels in zinc selenide grown by molecular‐beam epitaxy

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Effects of inhomogeneity on conductivities of nonlinear composite media

Guoqing Gu; K. W. Yu; Binghong Wang

J. Appl. Phys. 78, 1737–1744 (1995) https://doi.org/10.1063/1.360203

Abstract

View articletitled, Effects of inhomogeneity on conductivities of nonlinear composite media

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Photoinduced Ag migration in Ag–As–S glasses

Norimitsu Yoshida; Keiji Tanaka

J. Appl. Phys. 78, 1745–1750 (1995) https://doi.org/10.1063/1.360204

Abstract

View articletitled, Photoinduced Ag migration in Ag–As–S glasses

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Thermoelectric power of ternary semiconductor Se₁₀Sb₁₀Te₈₀ thin films

V. Damodara Das; K. S. Raju; S. Aruna

J. Appl. Phys. 78, 1751–1756 (1995) https://doi.org/10.1063/1.360719

Abstract

View articletitled, Thermoelectric power of ternary semiconductor Se10Sb10Te80 thin films

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The ac electrical behavior of polycrystalline yttria

V. D. Patton; C. C. Wang; S. A. Akbar; M. A. Alim

J. Appl. Phys. 78, 1757–1762 (1995) https://doi.org/10.1063/1.360205

Abstract

View articletitled, The ac electrical behavior of polycrystalline yttria

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Charge‐carrier kinetics in semiconductors by microwave conductivity measurements

C. Swiatkowski; A. Sanders; K.‐D. Buhre; M. Kunst

J. Appl. Phys. 78, 1763–1775 (1995) https://doi.org/10.1063/1.360206

Abstract

View articletitled, Charge‐carrier kinetics in semiconductors by microwave conductivity measurements

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Reassessment of the assignment of the In_M²⁺³⁺V_M²⁺ defect in CdTe and ternary II‐VI compounds

J. C. Austin; B. K. Patnaik; K. J. Price; Wm. C. Hughes

J. Appl. Phys. 78, 1776–1781 (1995) https://doi.org/10.1063/1.360207

Abstract

View articletitled, Reassessment of the assignment of the InM2+3+VM2+ defect in CdTe and ternary II‐VI compounds

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Small‐signal analysis of novel semiconductor superlattice electron‐wave interference devices

C. B. Yahya; K. P. Martin; R. J. Higgins

J. Appl. Phys. 78, 1782–1786 (1995) https://doi.org/10.1063/1.360208

Abstract

View articletitled, Small‐signal analysis of novel semiconductor superlattice electron‐wave interference devices

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Influence of negatively and positively charged scattering centers on electron mobility in semiconductor inversion layers: A Monte Carlo study

F. Gámiz; J. A. López‐Villanueva

J. Appl. Phys. 78, 1787–1792 (1995) https://doi.org/10.1063/1.360209

Abstract

View articletitled, Influence of negatively and positively charged scattering centers on electron mobility in semiconductor inversion layers: A Monte Carlo study

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Effect of an InGaP cap layer on annealing‐induced conductivity degradation in heavily Si‐doped n⁺GaAs epilayers

Kazuo Watanabe; Fumiaki Hyuga; Suehiro Sugitani; Takumi Nittono

J. Appl. Phys. 78, 1793–1797 (1995) https://doi.org/10.1063/1.360210

Abstract

View articletitled, Effect of an InGaP cap layer on annealing‐induced conductivity degradation in heavily Si‐doped n+GaAs epilayers

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Electron–electron interaction in three‐dimensional model quantum box

R. Yang; P. P. Ruden

J. Appl. Phys. 78, 1798–1803 (1995) https://doi.org/10.1063/1.360211

Abstract

View articletitled, Electron–electron interaction in three‐dimensional model quantum box

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The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers

P. Rees; P. Blood; M. J. H. Vanhommerig; G. J. Davies; P. J. Skevington

J. Appl. Phys. 78, 1804–1807 (1995) https://doi.org/10.1063/1.360212

Abstract

View articletitled, The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers

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Two‐dimensional approach for solving the inverse problem for deep level transient spectroscopy

Dobri Batovski; Chavdar Hardalov

J. Appl. Phys. 78, 1808–1811 (1995) https://doi.org/10.1063/1.360213

Abstract

View articletitled, Two‐dimensional approach for solving the inverse problem for deep level transient spectroscopy

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The effects of Si doping in In_0.52Al_0.48As layers grown lattice matched on InP substrates

S. F. Yoon; Y. B. Miao; K. Radhakrishnan; H. L. Duan

J. Appl. Phys. 78, 1812–1817 (1995) https://doi.org/10.1063/1.360214

Abstract

View articletitled, The effects of Si doping in In0.52Al0.48As layers grown lattice matched on InP substrates

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Defects generated by Fowler–Nordheim injection in silicon dioxide films produced by plasma‐enhanced chemical‐vapour deposition with nitrous oxide and silane

D. Landheer; Y. Tao; D.‐X. Xu; G. I. Sproule; D. A. Buchanan

J. Appl. Phys. 78, 1818–1823 (1995) https://doi.org/10.1063/1.360762

Abstract

View articletitled, Defects generated by Fowler–Nordheim injection in silicon dioxide films produced by plasma‐enhanced chemical‐vapour deposition with nitrous oxide and silane

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Electron energy states at the interface between semi‐insulating polycrystalline silicon and crystalline silicon

Bo Liss; Olof Engström

J. Appl. Phys. 78, 1824–1831 (1995) https://doi.org/10.1063/1.360215

Abstract

View articletitled, Electron energy states at the interface between semi‐insulating polycrystalline silicon and crystalline silicon

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Tight‐binding calculation of ZnSe/Ge superlattices: Electronic structure and optical property

E. G. Wang; Changfeng Chen; C. S. Ting

J. Appl. Phys. 78, 1832–1837 (1995) https://doi.org/10.1063/1.360216

Abstract

View articletitled, Tight‐binding calculation of ZnSe/Ge superlattices: Electronic structure and optical property

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Band gap of GaN films grown by molecular‐beam epitaxy on GaAs and GaP substrates

D. E. Lacklison; J. W. Orton; I. Harrison; T. S. Cheng; L. C. Jenkins; C. T. Foxon; S. E. Hooper

J. Appl. Phys. 78, 1838–1842 (1995) https://doi.org/10.1063/1.360217

Abstract

View articletitled, Band gap of GaN films grown by molecular‐beam epitaxy on GaAs and GaP substrates

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Inverse analysis for estimating the electron‐phonon coupling factor in thin metal films

H. R. B. Orlande; M. N. Özisik; D. Y. Tzou

J. Appl. Phys. 78, 1843–1849 (1995) https://doi.org/10.1063/1.360218

Abstract

View articletitled, Inverse analysis for estimating the electron‐phonon coupling factor in thin metal films

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Ideal theory of quantum well solar cells

Neal G. Anderson

J. Appl. Phys. 78, 1850–1861 (1995) https://doi.org/10.1063/1.360219

Abstract

View articletitled, Ideal theory of quantum well solar cells

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Surface impedance measurements of superconducting V₃Si films by a microstrip resonator technique

A. Andreone; A. Cassinese; A. DiChiara; M. Salluzzo; R. Vaglio; C. Attanasio; L. Maritato

J. Appl. Phys. 78, 1862–1865 (1995) https://doi.org/10.1063/1.360220

Abstract

View articletitled, Surface impedance measurements of superconducting V3Si films by a microstrip resonator technique

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Catastrophic quenching of superconductivity in melt‐textured YBa₂Cu₃O_7−δ with second‐phase additions

H. A. Blackstead; D. B. Pulling; P. J. McGinn

J. Appl. Phys. 78, 1866–1870 (1995) https://doi.org/10.1063/1.360221

Abstract

View articletitled, Catastrophic quenching of superconductivity in melt‐textured YBa2Cu3O7−δ with second‐phase additions

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Microwave effects on YBa₂Cu₃O_y Josephson junctions with step‐edge, bi‐epitaxial, and sandwich geometries

H. C. Yang; J. H. Lu; S. D. Lin; L. C. Ku; H. M. Cho; W. B. Jian; M. Y. Chern; H. E. Horng; J. M. Wu; J. T. Lo; C. C. Chiou

J. Appl. Phys. 78, 1871–1877 (1995) https://doi.org/10.1063/1.360222

Abstract

View articletitled, Microwave effects on YBa2Cu3Oy Josephson junctions with step‐edge, bi‐epitaxial, and sandwich geometries

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Magnetic‐field effect in a two‐dimensional array of short Josephson junctions

G. Filatrella; K. Wiesenfeld

J. Appl. Phys. 78, 1878–1883 (1995) https://doi.org/10.1063/1.360223

Abstract

View articletitled, Magnetic‐field effect in a two‐dimensional array of short Josephson junctions

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Structure and magnetic properties of NdCo_13−xSi_x

Tang Weihua; Liang Jingkui; Rao Guanghui; Yang Fuming

J. Appl. Phys. 78, 1884–1886 (1995) https://doi.org/10.1063/1.360224

Abstract

View articletitled, Structure and magnetic properties of NdCo13−xSix

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Increased exchange anisotropy due to disorder at permalloy/CoO interfaces

T. J. Moran; J. M. Gallego; Ivan K. Schuller

J. Appl. Phys. 78, 1887–1891 (1995) https://doi.org/10.1063/1.360225

Abstract

View articletitled, Increased exchange anisotropy due to disorder at permalloy/CoO interfaces

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Neutron‐diffraction study of the insertion scheme of hydrogen in Nd₂Fe₁₄B

O. Isnard; W. B. Yelon; S. Miraglia; D. Fruchart

J. Appl. Phys. 78, 1892–1898 (1995) https://doi.org/10.1063/1.360720

Abstract

View articletitled, Neutron‐diffraction study of the insertion scheme of hydrogen in Nd2Fe14B

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Magnetization of thin films with in‐plane uniaxial anisotropy studied by microwave absorption

M. Rivoire; G. Suran

J. Appl. Phys. 78, 1899–1905 (1995) https://doi.org/10.1063/1.360226

Abstract

View articletitled, Magnetization of thin films with in‐plane uniaxial anisotropy studied by microwave absorption

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Analysis of the electric relaxation in acrylate polymers with rigid side groups

R. Díaz‐Calleja; M. J. Sanchis; R. C. Reis‐Nunes; M. Pinto; E. Riande

J. Appl. Phys. 78, 1906–1913 (1995) https://doi.org/10.1063/1.360227

Abstract

View articletitled, Analysis of the electric relaxation in acrylate polymers with rigid side groups

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Dielectric relaxation in amorphous thin films of SrTiO₃ at elevated temperatures

K. Morii; H. Kawano; I. Fujii; T. Matsui; Y. Nakayama

J. Appl. Phys. 78, 1914–1919 (1995) https://doi.org/10.1063/1.360228

Abstract

View articletitled, Dielectric relaxation in amorphous thin films of SrTiO3 at elevated temperatures

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Raman spectroscopy and x‐ray diffraction of PbTiO₃ thin film

E. Ching‐Prado; A. Reynés‐Figueroa; R. S. Katiyar; S. B. Majumder; D. C. Agrawal

J. Appl. Phys. 78, 1920–1925 (1995) https://doi.org/10.1063/1.360229

Abstract

View articletitled, Raman spectroscopy and x‐ray diffraction of PbTiO3 thin film

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Stresses in Pt/Pb(Zr,Ti)O₃/Pt thin‐film stacks for integrated ferroelectric capacitors

G. A. C. M. Spierings; G. J. M. Dormans; W. G. J. Moors; M. J. E. Ulenaers; P. K. Larsen

J. Appl. Phys. 78, 1926–1933 (1995) https://doi.org/10.1063/1.360230

Abstract

View articletitled, Stresses in Pt/Pb(Zr,Ti)O3/Pt thin‐film stacks for integrated ferroelectric capacitors

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Distribution of relaxation times in perovskite‐type relaxor ferroelectrics

Hong Gui; Binglin Gu; Xiaowen Zhang

J. Appl. Phys. 78, 1934–1939 (1995) https://doi.org/10.1063/1.360231

Abstract

View articletitled, Distribution of relaxation times in perovskite‐type relaxor ferroelectrics

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The origin of defects in SiO₂ thermally grown on Czochralski silicon substrates

Manabu Itsumi; Masato Tomita; Masataka Yamawaki

J. Appl. Phys. 78, 1940–1943 (1995) https://doi.org/10.1063/1.360232

Abstract

View articletitled, The origin of defects in SiO2 thermally grown on Czochralski silicon substrates

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Photoluminescence study of band‐gap alignment of intermixed InAsP/InGaAsP superlattices

C. Francis; P. Boucaud; F. H. Julien; J. Y. Emery; L. Goldstein

J. Appl. Phys. 78, 1944–1947 (1995) https://doi.org/10.1063/1.360233

Abstract

View articletitled, Photoluminescence study of band‐gap alignment of intermixed InAsP/InGaAsP superlattices

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A reflectance anisotropy spectroscopy study of molecular sulfur adsorption on the GaAs(100) surface

G. Hughes; C. Springer; U. Resch; N. Esser; W. Richter

J. Appl. Phys. 78, 1948–1952 (1995) https://doi.org/10.1063/1.360234

Abstract

View articletitled, A reflectance anisotropy spectroscopy study of molecular sulfur adsorption on the GaAs(100) surface

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Raman spectroscopic studies of proton‐exchanged LiNbO₃ crystals

Xinglong Wu; Ming‐sheng Zhang; Feng Yan; Duan Feng

J. Appl. Phys. 78, 1953–1957 (1995) https://doi.org/10.1063/1.360166

Abstract

View articletitled, Raman spectroscopic studies of proton‐exchanged LiNbO3 crystals

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Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi₂

Z. Yang; K. P. Homewood; M. S. Finney; M. A. Harry; K. J. Reeson

J. Appl. Phys. 78, 1958–1963 (1995) https://doi.org/10.1063/1.360167

Abstract

View articletitled, Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2

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Structural order in thin a‐Si:H films

A. J. M. Berntsen; W. G. J. H. M. van Sark; W. F. van der Weg

J. Appl. Phys. 78, 1964–1967 (1995) https://doi.org/10.1063/1.360168

Abstract

View articletitled, Structural order in thin a‐Si:H films

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Electrochromism of fluorinated and electron‐bombarded tungsten oxide films

A. Azens; C. G. Granqvist; E. Pentjuss; J. Gabrusenoks; J. Barczynska

J. Appl. Phys. 78, 1968–1974 (1995) https://doi.org/10.1063/1.360169

Abstract

View articletitled, Electrochromism of fluorinated and electron‐bombarded tungsten oxide films

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Magneto‐photoluminescence of acceptors near the interfaces of Al_xGa_1−xAs/Al_yGa_1−yAs heterostructures

J. B. Zhu; H. I. Jeon; S. S. Cha; Y. G. Shin; B. C. Lee; K. Y. Lim; E.‐K. Suh; H. J. Lee; Y. G. Hwang

J. Appl. Phys. 78, 1975–1979 (1995) https://doi.org/10.1063/1.360170

Abstract

View articletitled, Magneto‐photoluminescence of acceptors near the interfaces of AlxGa1−xAs/AlyGa1−yAs heterostructures

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Excitonic properties of isolated nanometer‐sized InAs islands in a GaAs matrix

M. I. Alonso; Matthias Ilg; K. Ploog; A. Trampert

J. Appl. Phys. 78, 1980–1983 (1995) https://doi.org/10.1063/1.360171

Abstract

View articletitled, Excitonic properties of isolated nanometer‐sized InAs islands in a GaAs matrix

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Temperature dependence of the photostimulated luminescence of BaFCl:Eu²⁺ after ultraviolet irradiation

Xueqiang Zhang; Yongsheng Wang; Jian Liu; Guangyin Zhang; Guangnan Xiong; Xurong Xu

J. Appl. Phys. 78, 1984–1986 (1995) https://doi.org/10.1063/1.360760

Abstract

View articletitled, Temperature dependence of the photostimulated luminescence of BaFCl:Eu2+ after ultraviolet irradiation

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Optical absorption of microcrystalline Si‐Ni thin films

Olaf Schoenfeld; X. Zhao; T. Hempel; Y. Aoyagi

J. Appl. Phys. 78, 1987–1991 (1995) https://doi.org/10.1063/1.360172

Abstract

View articletitled, Optical absorption of microcrystalline Si‐Ni thin films

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Cathodoluminescence characterization of Ge‐doped CdTe crystals

U. Pal; P. Fernández; J. Piqueras; N. V. Sochinskii; E. Diéguez

J. Appl. Phys. 78, 1992–1995 (1995) https://doi.org/10.1063/1.360173

Abstract

View articletitled, Cathodoluminescence characterization of Ge‐doped CdTe crystals

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Raman scattering from anisotropic LO‐phonon–plasmon–coupled mode in n‐type 4H– and 6H–SiC

Hiroshi Harima; Shin‐ichi Nakashima; Tomoki Uemura

J. Appl. Phys. 78, 1996–2005 (1995) https://doi.org/10.1063/1.360174

Abstract

View articletitled, Raman scattering from anisotropic LO‐phonon–plasmon–coupled mode in n‐type 4H– and 6H–SiC

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Visible electroluminescence from semitransparent Au film/extra thin Si‐rich silicon oxide film/p‐Si structure

G. G. Qin; A. P. Li; B. R. Zhang; Bing‐Chen Li

J. Appl. Phys. 78, 2006–2009 (1995) https://doi.org/10.1063/1.360175

Abstract

View articletitled, Visible electroluminescence from semitransparent Au film/extra thin Si‐rich silicon oxide film/p‐Si structure

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Low‐temperature photochromic response of phosphorus‐doped bismuth silicon oxide

J. S. McCullough; Angela Harmon; J. J. Martin; M. T. Harris; J. J. Larkin

J. Appl. Phys. 78, 2010–2014 (1995) https://doi.org/10.1063/1.360176

Abstract

View articletitled, Low‐temperature photochromic response of phosphorus‐doped bismuth silicon oxide

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Deep‐center oxygen‐related photoluminescence in GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy

P. W. Yu; Y. Park; M. Skowronski; Michael L. Timmons

J. Appl. Phys. 78, 2015–2021 (1995) https://doi.org/10.1063/1.360177

Abstract

View articletitled, Deep‐center oxygen‐related photoluminescence in GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy

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Enhancement of material ablation using 248, 308, 532, 1064 nm laser pulse with a water film on the treated surface

A. Dupont; P. Caminat; P. Bournot; J. P. Gauchon

J. Appl. Phys. 78, 2022–2028 (1995) https://doi.org/10.1063/1.360178

Abstract

View articletitled, Enhancement of material ablation using 248, 308, 532, 1064 nm laser pulse with a water film on the treated surface

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Laser power dependence of particulate formation on pulse laser deposited films

Yukio Watanabe; M. Tanamura; S. Matsumoto; Y. Seki

J. Appl. Phys. 78, 2029–2036 (1995) https://doi.org/10.1063/1.360179

Abstract

View articletitled, Laser power dependence of particulate formation on pulse laser deposited films

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Thermocapillary flow excited by focused nanosecond laser pulses in contaminated thin liquid iron films

V. Yu. Balandin; D. Otte; O. Bostanjoglo

J. Appl. Phys. 78, 2037–2044 (1995) https://doi.org/10.1063/1.360180

Abstract

View articletitled, Thermocapillary flow excited by focused nanosecond laser pulses in contaminated thin liquid iron films

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Reactive ion etching mechanism of plasma enhanced chemically vapor deposited aluminum oxide film in CF₄/O₂ plasma

Jae‐Whan Kim; Yong‐Chun Kim; Won‐Jong Lee

J. Appl. Phys. 78, 2045–2049 (1995) https://doi.org/10.1063/1.360181

Abstract

View articletitled, Reactive ion etching mechanism of plasma enhanced chemically vapor deposited aluminum oxide film in CF4/O2 plasma

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An attempt towards quantitative photothermal microscopy

U. Seidel; K. Haupt; H. G. Walther; J. A. Burt; M. Munidasa

J. Appl. Phys. 78, 2050–2056 (1995) https://doi.org/10.1063/1.360182

Abstract

View articletitled, An attempt towards quantitative photothermal microscopy

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Ion beam vapor deposition for Si epitaxy at low substrate temperatures

S. Mohajerzadeh; C. R. Selvakumar; D. E. Brodie; M. D. Robertson; J. M. Corbett

J. Appl. Phys. 78, 2057–2059 (1995) https://doi.org/10.1063/1.360183

Abstract

View articletitled, Ion beam vapor deposition for Si epitaxy at low substrate temperatures

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Modeling of O‐18 tracer distribution during ‘‘double oxidation’’ experiments for inward growing scales

N. Appannagaari; S. N. Basu

J. Appl. Phys. 78, 2060–2069 (1995) https://doi.org/10.1063/1.360718

Abstract

View articletitled, Modeling of O‐18 tracer distribution during ‘‘double oxidation’’ experiments for inward growing scales

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Synthesis of epitaxial β‐SiC by C₆₀ carbonization of silicon

S. Henke; B. Stritzker; B. Rauschenbach

J. Appl. Phys. 78, 2070–2073 (1995) https://doi.org/10.1063/1.360184

Abstract

View articletitled, Synthesis of epitaxial β‐SiC by C60 carbonization of silicon

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Reaction chemistry and optimization of plasma remediation of N_xO_y from gas streams

Ann C. Gentile; Mark J. Kushner

J. Appl. Phys. 78, 2074–2085 (1995) https://doi.org/10.1063/1.360185

Abstract

View articletitled, Reaction chemistry and optimization of plasma remediation of NxOy from gas streams

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Two‐dimensional distributions of C₂, CH, and OH in a diamond depositing oxyacetylene flame measured by laser induced fluorescence

R. J. H. Klein‐Douwel; J. J. L. Spaanjaars; J. J. ter Meulen

J. Appl. Phys. 78, 2086–2096 (1995) https://doi.org/10.1063/1.360186

Abstract

View articletitled, Two‐dimensional distributions of C2, CH, and OH in a diamond depositing oxyacetylene flame measured by laser induced fluorescence

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Amplitude and frequency dependence of hysteresis loss in a magnet‐superconductor levitation system

Z. J. Yang; J. R. Hull; T. M. Mulcahy; T. D. Rossing

J. Appl. Phys. 78, 2097–2100 (1995) https://doi.org/10.1063/1.360187

Abstract

View articletitled, Amplitude and frequency dependence of hysteresis loss in a magnet‐superconductor levitation system

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Hot‐electron impact excitation of ZnS:Tb alternating‐current thin‐film electroluminescent devices

K. Streicher; T. K. Plant; J. F. Wager

J. Appl. Phys. 78, 2101–2104 (1995) https://doi.org/10.1063/1.360188

Abstract

View articletitled, Hot‐electron impact excitation of ZnS:Tb alternating‐current thin‐film electroluminescent devices

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Influence of nonuniform doping on the uniformity of current gain, base transit time, and related properties of AlGaAs/GaAs heterojunction bipolar transistors

S. N. Mohammad; J.‐I. Chyi; J. Chen; H. Morkoç

J. Appl. Phys. 78, 2105–2112 (1995) https://doi.org/10.1063/1.360189

Abstract

View articletitled, Influence of nonuniform doping on the uniformity of current gain, base transit time, and related properties of AlGaAs/GaAs heterojunction bipolar transistors

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Superconductor‐insulator‐normal conductor tunnel junctions for frequency mixing around 300 GHz

D. Maier; A. Karpov; T. Lehnert; K. H. Gundlach

J. Appl. Phys. 78, 2113–2116 (1995) https://doi.org/10.1063/1.360190

Abstract

View articletitled, Superconductor‐insulator‐normal conductor tunnel junctions for frequency mixing around 300 GHz

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Observation of quantum confined Stark effect in In_xGa_1−xAs/GaAs single‐quantum well by photoreflectance spectroscopy

D. P. Wang; C. T. Chen; H. Kuan; S. C. Shei; Y. K. Su

J. Appl. Phys. 78, 2117–2119 (1995) https://doi.org/10.1063/1.360191

Abstract

View articletitled, Observation of quantum confined Stark effect in InxGa1−xAs/GaAs single‐quantum well by photoreflectance spectroscopy

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Structural changes of multiphase bismuth‐oxide superconductor thin films at high temperatures

Teruo Ishibashi; Osamu Yoda

J. Appl. Phys. 78, 2120–2122 (1995) https://doi.org/10.1063/1.360192

Abstract

View articletitled, Structural changes of multiphase bismuth‐oxide superconductor thin films at high temperatures

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Plasma‐assisted low‐pressure metalorganic chemical vapor deposition of GaN on GaAs substrates

Michio Sato

J. Appl. Phys. 78, 2123–2125 (1995) https://doi.org/10.1063/1.360193

Abstract

View articletitled, Plasma‐assisted low‐pressure metalorganic chemical vapor deposition of GaN on GaAs substrates

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p‐doped GaAs/Ga_0.51In_0.49P quantum well intersub‐band photodetectors

J. Hoff; X. He; M. Erdtmann; E. Bigan; M. Razeghi; G. J. Brown

J. Appl. Phys. 78, 2126–2128 (1995) https://doi.org/10.1063/1.360194

Abstract

View articletitled, p‐doped GaAs/Ga0.51In0.49P quantum well intersub‐band photodetectors

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The EX defect center in porous silicon

W. E. Carlos; S. M. Prokes

J. Appl. Phys. 78, 2129–2131 (1995) https://doi.org/10.1063/1.360761

Abstract

View articletitled, The EX defect center in porous silicon

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Ferromagnetic Mn/C/Si films

T. Takeuchi; M. Igarashi; Y. Hirayama; M. Futamoto

J. Appl. Phys. 78, 2132–2134 (1995) https://doi.org/10.1063/1.360195

Abstract

View articletitled, Ferromagnetic Mn/C/Si films

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Stationary modeling of two‐dimensional states in resonant tunneling devices

X. Oriols; J. Suñé; F. Martín; X. Aymerich

J. Appl. Phys. 78, 2135–2137 (1995) https://doi.org/10.1063/1.360196

Abstract

View articletitled, Stationary modeling of two‐dimensional states in resonant tunneling devices

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Epitaxial Sr₂(AlTa)O₆ films as buffer layers on MgO for YBa₂Cu₃O_7−x thin film growth

K. Y. Chen; S. Afonso; R. C. Wang; Y. Q. Tang; G. Salamo; F. T. Chan; R. Guo; A. S. Bhalla

J. Appl. Phys. 78, 2138–2140 (1995) https://doi.org/10.1063/1.360197

Abstract

View articletitled, Epitaxial Sr2(AlTa)O6 films as buffer layers on MgO for YBa2Cu3O7−x thin film growth

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Comment on ‘‘High temperature adsorption of nitrogen on a polycrystalline nickel surface’’

Y. Pauleau

J. Appl. Phys. 78, 2141–2143 (1995) https://doi.org/10.1063/1.360198

Abstract

View articletitled, Comment on ‘‘High temperature adsorption of nitrogen on a polycrystalline nickel surface’’

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Response to ‘‘Comment on ‘High temperature adsorption of nitrogen on a polycrystalline nickel surface’ ’’ [J. Appl. Phys. 78, 2141 (1995)]

S. Boughaba; G. Auvert

J. Appl. Phys. 78, 2144 (1995) https://doi.org/10.1063/1.360199

Abstract

View articletitled, Response to ‘‘Comment on ‘High temperature adsorption of nitrogen on a polycrystalline nickel surface’ ’’ [J. Appl. Phys. 78, 2141 (1995)]

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