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Recent progress in computer‐aided materials design for compound semiconductors

Tomonori Ito

J. Appl. Phys. 77, 4845–4886 (1995) https://doi.org/10.1063/1.359360

Abstract

View articletitled, Recent progress in computer‐aided materials design for compound semiconductors

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Collection of athermal phonons into doped Ge thermistors using quasiparticle trapping

S. M. Grannan; B. A. Young; A. E. Lange; S. Labov; B. Sadoulet; J. Emes; E. E. Haller

J. Appl. Phys. 77, 4887–4891 (1995) https://doi.org/10.1063/1.359292

Abstract

View articletitled, Collection of athermal phonons into doped Ge thermistors using quasiparticle trapping

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Dependence of the absorption of pulsed CO₂‐laser radiation by silane on wavenumber, fluence, pulse duration, temperature, optical path length, and pressure of absorbing and nonabsorbing gases

Jerzy Bl/ażejowski; Ludwika Gruzdiewa; Jacek Rulewski; Frederick W. Lampe

J. Appl. Phys. 77, 4892–4898 (1995) https://doi.org/10.1063/1.359293

Abstract

View articletitled, Dependence of the absorption of pulsed CO2‐laser radiation by silane on wavenumber, fluence, pulse duration, temperature, optical path length, and pressure of absorbing and nonabsorbing gases

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Lifetime measurement of the B²∑⁺_u level of N⁺₂ by laser‐induced fluorescence

T. Fukuchi; A. Y. Wong; R. F. Wuerker

J. Appl. Phys. 77, 4899–4902 (1995) https://doi.org/10.1063/1.359294

Abstract

View articletitled, Lifetime measurement of the B2∑+u level of N+2 by laser‐induced fluorescence

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Method of solution of forward problems in eddy‐current testing

A. A. Kolyshkin; Rémi Vaillancourt

J. Appl. Phys. 77, 4903–4913 (1995) https://doi.org/10.1063/1.359295

Abstract

View articletitled, Method of solution of forward problems in eddy‐current testing

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Focusing and guiding charged particles by a superconducting tube

Peter Roth

J. Appl. Phys. 77, 4914–4920 (1995) https://doi.org/10.1063/1.359296

Abstract

View articletitled, Focusing and guiding charged particles by a superconducting tube

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Application of intermixing to p‐type GaAs/AlAs distributed Bragg reflectors for series resistance reduction in vertical cavity devices

A. Khan; K. Woodbridge; M. Ghisoni; G. Parry; G. Beyer; J. Roberts; M. Pate; G. Hill

J. Appl. Phys. 77, 4921–4926 (1995) https://doi.org/10.1063/1.359297

Abstract

View articletitled, Application of intermixing to p‐type GaAs/AlAs distributed Bragg reflectors for series resistance reduction in vertical cavity devices

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Gain and current‐density calculation in IV–VI quantum well lasers

M. F. Khodr; P. J. McCann; B. A. Mason

J. Appl. Phys. 77, 4927–4930 (1995) https://doi.org/10.1063/1.359298

Abstract

View articletitled, Gain and current‐density calculation in IV–VI quantum well lasers

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Polarization dependence of the absorption coefficient for an array of strained quantum wires

Igor Vurgaftman; Jasprit Singh

J. Appl. Phys. 77, 4931–4934 (1995) https://doi.org/10.1063/1.359553

Abstract

View articletitled, Polarization dependence of the absorption coefficient for an array of strained quantum wires

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Complex electro‐optic constants of dye‐doped polymer films determined with a Mach–Zehnder interferometer

Hiroshi Ono; Kazuhiko Misawa; Kaoru Minoshima; Akikatsu Ueki; Takayoshi Kobayashi

J. Appl. Phys. 77, 4935–4940 (1995) https://doi.org/10.1063/1.359299

Abstract

View articletitled, Complex electro‐optic constants of dye‐doped polymer films determined with a Mach–Zehnder interferometer

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Effects of walk‐off and group velocity difference on the optical parametric generation in KTiOPO₄ crystals

Tadashi Nishikawa; Naoshi Uesugi

J. Appl. Phys. 77, 4941–4947 (1995) https://doi.org/10.1063/1.359300

Abstract

View articletitled, Effects of walk‐off and group velocity difference on the optical parametric generation in KTiOPO4 crystals

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Laser oscillation mechanisms of KrF‐laser‐pumped iron vapor plasma

H. Yoshida

J. Appl. Phys. 77, 4948–4953 (1995) https://doi.org/10.1063/1.359301

Abstract

View articletitled, Laser oscillation mechanisms of KrF‐laser‐pumped iron vapor plasma

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Thermal conductivity of metal‐matrix composites

L. C. Davis; B. E. Artz

J. Appl. Phys. 77, 4954–4960 (1995) https://doi.org/10.1063/1.359302

Abstract

View articletitled, Thermal conductivity of metal‐matrix composites

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Study of C₂F₆ overetch induced damage and the effects of overetch on subsequent SiCl₄ etch of GaAs/AlGaAs

B. S. Ooi; S. E. Hicks; A. C. Bryce; C. D. W. Wilkinson; J. H. Marsh

J. Appl. Phys. 77, 4961–4966 (1995) https://doi.org/10.1063/1.359303

Abstract

View articletitled, Study of C2F6 overetch induced damage and the effects of overetch on subsequent SiCl4 etch of GaAs/AlGaAs

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Collisional sheath dynamics

T. E. Sheridan; M. J. Goeckner

J. Appl. Phys. 77, 4967–4972 (1995) https://doi.org/10.1063/1.359304

Abstract

View articletitled, Collisional sheath dynamics

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X‐ray diagnostics of plasma focus DPF‐78 discharge with heavy‐gas admixtures

P. S. Antsiferov; F. B. Rosmej; O. N. Rosmej; H. Schmidt; D. Schulz; A. Schulz

J. Appl. Phys. 77, 4973–4978 (1995) https://doi.org/10.1063/1.359305

Abstract

View articletitled, X‐ray diagnostics of plasma focus DPF‐78 discharge with heavy‐gas admixtures

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Measurements of reduced‐density air channels produced by a double‐pulsed electron beam

F. M. Bieniosek; S. L. Cartier

J. Appl. Phys. 77, 4979–4983 (1995) https://doi.org/10.1063/1.359306

Abstract

View articletitled, Measurements of reduced‐density air channels produced by a double‐pulsed electron beam

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Photoconductivity evolution due to carrier trapping by defects in 17 MeV‐proton irradiated silicon

Hiroshi Amekura; Naoki Kishimoto; Tetsuya Saito

J. Appl. Phys. 77, 4984–4992 (1995) https://doi.org/10.1063/1.359307

Abstract

View articletitled, Photoconductivity evolution due to carrier trapping by defects in 17 MeV‐proton irradiated silicon

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Partial and perfect dislocation nucleation at the onset of stress relaxation in In_0.60Ga_0.40As active layers of high mobility transistors grown on InP

F. Peiró; A. Cornet; J. R. Morante

J. Appl. Phys. 77, 4993–4996 (1995) https://doi.org/10.1063/1.359308

Abstract

View articletitled, Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP

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Amorphous alloy formation by mechanical alloying and consecutive heat treatment in Fe₅₀B₅₀ powder mixture

J. Balogh; T. Kemény; I. Vincze; L. Bujdosó; L. Tóth; G. Vincze

J. Appl. Phys. 77, 4997–5003 (1995) https://doi.org/10.1063/1.359522

Abstract

View articletitled, Amorphous alloy formation by mechanical alloying and consecutive heat treatment in Fe50B50 powder mixture

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X‐ray study of elastic and plastic strains in Na⁺‐implanted (001) monocrystalline MgO

R. Brenier; M. Beranger; B. Canut; L. Gea; S. M. M. Ramos; P. Thevenard; K. F. Badawi

J. Appl. Phys. 77, 5004–5007 (1995) https://doi.org/10.1063/1.359309

Abstract

View articletitled, X‐ray study of elastic and plastic strains in Na+‐implanted (001) monocrystalline MgO

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Radiation hardening of pure‐silica‐core optical fibers by ultra‐high‐dose γ‐ray pre‐irradiation

D. L. Griscom

J. Appl. Phys. 77, 5008–5013 (1995) https://doi.org/10.1063/1.359310

Abstract

View articletitled, Radiation hardening of pure‐silica‐core optical fibers by ultra‐high‐dose γ‐ray pre‐irradiation

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Gettering effects in BF₂‐implanted Si(100) by ion‐beam defect engineering

Qing‐Tai Zhao; Zhong‐Lie Wang; Yongming Cao; Tian‐Bing Xu; Pei‐Ran Zhu

J. Appl. Phys. 77, 5014–5019 (1995) https://doi.org/10.1063/1.359311

Abstract

View articletitled, Gettering effects in BF2‐implanted Si(100) by ion‐beam defect engineering

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Nucleation of crystalline phases in plastically deformed amorphous NiZr

G. Mazzone; M. Vittori Antisari

J. Appl. Phys. 77, 5020–5025 (1995) https://doi.org/10.1063/1.359598

Abstract

View articletitled, Nucleation of crystalline phases in plastically deformed amorphous NiZr

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Changes in the densities of dislocations on distinct slip systems during stress relaxation in thin aluminium layers: The interpretation of x‐ray diffraction line broadening and line shift

A. C. Vermeulen; R. Delhez; Th. H. de Keijser; E. J. Mittemeijer

J. Appl. Phys. 77, 5026–5049 (1995) https://doi.org/10.1063/1.359312

Abstract

View articletitled, Changes in the densities of dislocations on distinct slip systems during stress relaxation in thin aluminium layers: The interpretation of x‐ray diffraction line broadening and line shift

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Study of deep levels in alpha‐irradiated silver‐doped p‐type silicon

Akbar Ali; N. Baber; M. Zafar Iqbal

J. Appl. Phys. 77, 5050–5059 (1995) https://doi.org/10.1063/1.359313

Abstract

View articletitled, Study of deep levels in alpha‐irradiated silver‐doped p‐type silicon

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Yielding and phase transition under shock compression of yttria‐doped cubic zirconia single crystal and polycrystal

Tsutomu Mashimo; Akira Nakamura; Masao Kodama; Keiji Kusaba; Kiyoto Fukuoka; Yasuhiko Syono

J. Appl. Phys. 77, 5060–5068 (1995) https://doi.org/10.1063/1.359314

Abstract

View articletitled, Yielding and phase transition under shock compression of yttria‐doped cubic zirconia single crystal and polycrystal

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Anomalous shock compression behavior of yttria‐doped tetragonal zirconia

Tsutomu Mashimo; Akira Nakamura; Minoru Nishida; Susumu Matsuzaki; Keiji Kusaba; Kiyoto Fukuoka; Yasuhiko Syono

J. Appl. Phys. 77, 5069–5076 (1995) https://doi.org/10.1063/1.359315

Abstract

View articletitled, Anomalous shock compression behavior of yttria‐doped tetragonal zirconia

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Shock wave mechanics in porous ceramic assemblies

P. Boogerd; H. J. Verbeek; M. Stuivinga; A. C. Van der Steen; J. Schoonman

J. Appl. Phys. 77, 5077–5085 (1995) https://doi.org/10.1063/1.359316

Abstract

View articletitled, Shock wave mechanics in porous ceramic assemblies

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Phase stability and transformations in pure and lanthanum modified lead zirconate ceramics

Xunhu Dai; Z. Xu; Dwight Viehland

J. Appl. Phys. 77, 5086–5094 (1995) https://doi.org/10.1063/1.359317

Abstract

View articletitled, Phase stability and transformations in pure and lanthanum modified lead zirconate ceramics

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Radiation of acoustic phonons from quantum wires

R. Mickevičius; V. Mitin; V. Kochelap; Michael A. Stroscio; Gerald J. Iafrate

J. Appl. Phys. 77, 5095–5097 (1995) https://doi.org/10.1063/1.359318

Abstract

View articletitled, Radiation of acoustic phonons from quantum wires

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Novel oscillating cup viscometer–application to molten HgTe and Hg_0.8Cd_0.2Te

Konstantin Mazuruk; Ching‐Hua Su; Sandor L. Lehoczky; Franz Rosenberger

J. Appl. Phys. 77, 5098–5102 (1995) https://doi.org/10.1063/1.359319

Abstract

View articletitled, Novel oscillating cup viscometer–application to molten HgTe and Hg0.8Cd0.2Te

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Diffusion of boron, lithium, oxygen, hydrogen, and nitrogen in type IIa natural diamond

Galina Popovici; R. G. Wilson; T. Sung; M. A. Prelas; S. Khasawinah

J. Appl. Phys. 77, 5103–5106 (1995) https://doi.org/10.1063/1.359320

Abstract

View articletitled, Diffusion of boron, lithium, oxygen, hydrogen, and nitrogen in type IIa natural diamond

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Stability of C54 titanium germanosilicide on a silicon‐germanium alloy substrate

D. B. Aldrich; Y. L. Chen; D. E. Sayers; R. J. Nemanich; S. P. Ashburn; M. C. Öztürk

J. Appl. Phys. 77, 5107–5114 (1995) https://doi.org/10.1063/1.359321

Abstract

View articletitled, Stability of C54 titanium germanosilicide on a silicon‐germanium alloy substrate

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Effect of H₂ dilution on the growth of low temperature as‐deposited poly‐Si films using SiF₄/SiH₄/H₂ plasma

Sung Ki Kim; Kyu Chang Park; Jin Jang

J. Appl. Phys. 77, 5115–5118 (1995) https://doi.org/10.1063/1.359554

Abstract

View articletitled, Effect of H2 dilution on the growth of low temperature as‐deposited poly‐Si films using SiF4/SiH4/H2 plasma

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Bias induced diamond nucleation studies on refractory metal substrates

S. D. Wolter; J. T. Glass; B. R. Stoner

J. Appl. Phys. 77, 5119–5124 (1995) https://doi.org/10.1063/1.359322

Abstract

View articletitled, Bias induced diamond nucleation studies on refractory metal substrates

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Oxidation of H‐terminated Si(100) surfaces studied by high‐resolution electron energy loss spectroscopy

H. Ikeda; K. Hotta; T. Yamada; S. Zaima; H. Iwano; Y. Yasuda

J. Appl. Phys. 77, 5125–5129 (1995) https://doi.org/10.1063/1.359323

Abstract

View articletitled, Oxidation of H‐terminated Si(100) surfaces studied by high‐resolution electron energy loss spectroscopy

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Effect of stress on grain boundary motion in thin films

F. Y. Génin

J. Appl. Phys. 77, 5130–5137 (1995) https://doi.org/10.1063/1.359324

Abstract

View articletitled, Effect of stress on grain boundary motion in thin films

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Control of composition and structure for molybdenum nitride films synthesized using ion beam assisted deposition

M. S. Mudholkar; L. T. Thompson

J. Appl. Phys. 77, 5138–5143 (1995) https://doi.org/10.1063/1.359257

Abstract

View articletitled, Control of composition and structure for molybdenum nitride films synthesized using ion beam assisted deposition

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Raman study of strain relaxation in Ge on Si

Masaya Ichimura; Akira Usami; Akihiro Wakahara; Akio Sasaki

J. Appl. Phys. 77, 5144–5148 (1995) https://doi.org/10.1063/1.359258

Abstract

View articletitled, Raman study of strain relaxation in Ge on Si

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Structural characterization of oxidized titanium surfaces

M. Jobin; M. Taborelli; P. Descouts

J. Appl. Phys. 77, 5149–5155 (1995) https://doi.org/10.1063/1.359259

Abstract

View articletitled, Structural characterization of oxidized titanium surfaces

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Investigation of titanium silicide formation in Ti+Si reactions using infrared spectroscopy and x‐ray diffraction

K. L. Saenger; C. Cabral, Jr.; L. A. Clevenger; R. A. Roy

J. Appl. Phys. 77, 5156–5159 (1995) https://doi.org/10.1063/1.359260

Abstract

View articletitled, Investigation of titanium silicide formation in Ti+Si reactions using infrared spectroscopy and x‐ray diffraction

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Solid‐phase epitaxial regrowth and dopant activation of P‐implanted metastable pseudomorphic Ge_0.12Si_0.88 on Si(100)

D. Y. C. Lie; N. D. Theodore; J. H. Song; M.‐A. Nicolet

J. Appl. Phys. 77, 5160–5166 (1995) https://doi.org/10.1063/1.359261

Abstract

View articletitled, Solid‐phase epitaxial regrowth and dopant activation of P‐implanted metastable pseudomorphic Ge0.12Si0.88 on Si(100)

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Desorption of ultraviolet‐ozone oxides from InP under phosphorus and arsenic overpressures

P. G. Hofstra; D. A. Thompson; B. J. Robinson; M. P. Besland; M. Gendry; P. Regreny; G. Hollinger

J. Appl. Phys. 77, 5167–5172 (1995) https://doi.org/10.1063/1.359262

Abstract

View articletitled, Desorption of ultraviolet‐ozone oxides from InP under phosphorus and arsenic overpressures

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Polycrystalline interlayer formed by deposition of thin‐film iridium on silicon

C. Ballesteros; T. Rodriguez; J. Jimenez‐Leube; M. Clement

J. Appl. Phys. 77, 5173–5175 (1995) https://doi.org/10.1063/1.359263

Abstract

View articletitled, Polycrystalline interlayer formed by deposition of thin‐film iridium on silicon

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The adhesion of metallic films to laser‐irradiated alumina

A. J. Pedraza; M. J. DeSilva; R. A. Kumar; Douglas H. Lowndes

J. Appl. Phys. 77, 5176–5179 (1995) https://doi.org/10.1063/1.359264

Abstract

View articletitled, The adhesion of metallic films to laser‐irradiated alumina

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Electrostatic deformation in band profiles of InP‐based strained‐layer quantum‐well lasers

Shunji Seki; Kiyoyuki Yokoyama

J. Appl. Phys. 77, 5180–5184 (1995) https://doi.org/10.1063/1.359265

Abstract

View articletitled, Electrostatic deformation in band profiles of InP‐based strained‐layer quantum‐well lasers

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Photoconductivity of gallium arsenide epitaxial layers

Martin Parenteau; Wu Fengmei; Anouar Jorio; Cosmo Carlone

J. Appl. Phys. 77, 5185–5190 (1995) https://doi.org/10.1063/1.359266

Abstract

View articletitled, Photoconductivity of gallium arsenide epitaxial layers

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Unique spatial solitons in Gunn‐instability semiconductors

K. Hayata; M. Koshiba

J. Appl. Phys. 77, 5191–5194 (1995) https://doi.org/10.1063/1.359552

Abstract

View articletitled, Unique spatial solitons in Gunn‐instability semiconductors

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Space charges of different mobilities: A novel data processing method

Yewen Zhang; Jacques Lewiner; Claude Alquié; Nigel Hampton

J. Appl. Phys. 77, 5195–5200 (1995) https://doi.org/10.1063/1.359267

Abstract

View articletitled, Space charges of different mobilities: A novel data processing method

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Detailed investigation of a nonradiative recombination center in Si by electrically detected magnetic resonance

Z. Xiong; D. J. Miller

J. Appl. Phys. 77, 5201–5207 (1995) https://doi.org/10.1063/1.359268

Abstract

View articletitled, Detailed investigation of a nonradiative recombination center in Si by electrically detected magnetic resonance

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Supralinear photoconductivity of copper doped semi‐insulating gallium arsenide

K. H. Schoenbach; R. P. Joshi; F. Peterkin; R. L. Druce

J. Appl. Phys. 77, 5208–5214 (1995) https://doi.org/10.1063/1.359269

Abstract

View articletitled, Supralinear photoconductivity of copper doped semi‐insulating gallium arsenide

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Critical interfacial characteristics for effective conductivities of isotropic composites containing spherical inclusions

Shih‐Yuan Lu

J. Appl. Phys. 77, 5215–5219 (1995) https://doi.org/10.1063/1.359270

Abstract

View articletitled, Critical interfacial characteristics for effective conductivities of isotropic composites containing spherical inclusions

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Transport mechanism of spray pyrolytic‐grown indium tin oxide/indium phosphide junctions

V. Vasu; P. Manivannan; A. Subrahmanyam

J. Appl. Phys. 77, 5220–5224 (1995) https://doi.org/10.1063/1.359271

Abstract

View articletitled, Transport mechanism of spray pyrolytic‐grown indium tin oxide/indium phosphide junctions

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A materials study of PtTiGePd ohmic contacts to p⁺‐AlGaAs as a function of annealing temperature

M. W. Cole; W. Y. Han; L. M. Casas; K. A. Jones

J. Appl. Phys. 77, 5225–5230 (1995) https://doi.org/10.1063/1.359272

Abstract

View articletitled, A materials study of PtTiGePd ohmic contacts to p+‐AlGaAs as a function of annealing temperature

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Fabrication of inherently stable and adjustable contacts of atomic size

C. J. Muller; R. de Bruyn Ouboter

J. Appl. Phys. 77, 5231–5236 (1995) https://doi.org/10.1063/1.359273

Abstract

View articletitled, Fabrication of inherently stable and adjustable contacts of atomic size

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Temperature dependence of intrasubband relaxation time and its influence on high‐temperature characteristics of InP‐based quantum‐well lasers

Shunji Seki; Kiyoyuki Yokoyama; Paul Sotirelis

J. Appl. Phys. 77, 5237–5240 (1995) https://doi.org/10.1063/1.359274

Abstract

View articletitled, Temperature dependence of intrasubband relaxation time and its influence on high‐temperature characteristics of InP‐based quantum‐well lasers

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Electrical and metallurgical behavior of Au/Zn contacts to p‐type indium phosphide

Navid S. Fatemi; Victor G. Weizer

J. Appl. Phys. 77, 5241–5247 (1995) https://doi.org/10.1063/1.359275

Abstract

View articletitled, Electrical and metallurgical behavior of Au/Zn contacts to p‐type indium phosphide

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Theory of hopping transport of holes in amorphous SiO₂

B. M. Deb; A. N. Chandorkar

J. Appl. Phys. 77, 5248–5255 (1995) https://doi.org/10.1063/1.359276

Abstract

View articletitled, Theory of hopping transport of holes in amorphous SiO2

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Optical intervalence‐subband transitions in strained p‐type In_1−xGa_xAs/InP quantum wells

S. A. Stoklitsky; Q. X. Zhao; P. O. Holtz; B. Monemar; T. Lundström

J. Appl. Phys. 77, 5256–5262 (1995) https://doi.org/10.1063/1.359277

Abstract

View articletitled, Optical intervalence‐subband transitions in strained p‐type In1−xGaxAs/InP quantum wells

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Epitaxial nucleation and growth of chemically derived Ba₂YCu₃O_7−x thin films on (001) SrTiO₃

P. C. McIntyre; M. J. Cima; A. Roshko

J. Appl. Phys. 77, 5263–5272 (1995) https://doi.org/10.1063/1.359278

Abstract

View articletitled, Epitaxial nucleation and growth of chemically derived Ba2YCu3O7−x thin films on (001) SrTiO3

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Experimental investigation of the kinetic inductance in YBa₂Cu₃O₇ square washer superconducting quantum interference devices

Dirk Grundler; Bernd David; Olaf Doessel

J. Appl. Phys. 77, 5273–5277 (1995) https://doi.org/10.1063/1.359279

Abstract

View articletitled, Experimental investigation of the kinetic inductance in YBa2Cu3O7 square washer superconducting quantum interference devices

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Phenomenological model for the c‐axis resistive dissipation in La₂₋_xSr_xCuO₄ as a function of temperature, magnetic field, and its orientation

S. L. Yuan; Z. J. Yang; K. Kadowaki

J. Appl. Phys. 77, 5278–5281 (1995) https://doi.org/10.1063/1.359280

Abstract

View articletitled, Phenomenological model for the c‐axis resistive dissipation in La2−xSrxCuO4 as a function of temperature, magnetic field, and its orientation

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Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa₂Cu₃O_7−x microstriplines on Si and GaAs substrates

F. Rüders; O. Hollricher; C. A. Copetti; A. Förster; Ch. Buchal; W. Prusseit; H. Kinder

J. Appl. Phys. 77, 5282–5286 (1995) https://doi.org/10.1063/1.359281

Abstract

View articletitled, Ultrahigh frequency measurements of magnetic penetration length and surface impedance of YBa2Cu3O7−x microstriplines on Si and GaAs substrates

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Magnetic and transport measurements of Tl‐1223 superconductors

D. N. Zheng; J. D. Johnson; A. R. Jones; A. M. Campbell; W. Y. Liang; T. Doi; M. Okada; K. Higashyama

J. Appl. Phys. 77, 5287–5292 (1995) https://doi.org/10.1063/1.359282

Abstract

View articletitled, Magnetic and transport measurements of Tl‐1223 superconductors

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Rapid thermal annealing of amorphous and nanocrystalline soft‐magnetic alloys in a static magnetic field

Fred Roozeboom; Frank W. A. Dirne

J. Appl. Phys. 77, 5293–5297 (1995) https://doi.org/10.1063/1.359283

Abstract

View articletitled, Rapid thermal annealing of amorphous and nanocrystalline soft‐magnetic alloys in a static magnetic field

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Magnetic properties of very high permeability, low coercivity, and high electrical resistivity in Fe₈₇Zr₇B₅Ag₁ amorphous alloy

B. G. Kim; J. S. Song; H. S. Kim; Y. W. Oh

J. Appl. Phys. 77, 5298–5302 (1995) https://doi.org/10.1063/1.359284

Abstract

View articletitled, Magnetic properties of very high permeability, low coercivity, and high electrical resistivity in Fe87Zr7B5Ag1 amorphous alloy

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Method of measuring anisotropy field of a recording medium investigated by computer simulation

Yasutaro Uesaka; Kazuetsu Yoshida; Yoshinobu Nakatani; Nobuo Hayashi

J. Appl. Phys. 77, 5303–5308 (1995) https://doi.org/10.1063/1.359285

Abstract

View articletitled, Method of measuring anisotropy field of a recording medium investigated by computer simulation

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Magnetic and structural properties of iron nitride thin films obtained by argon‐nitrogen reactive radio‐frequency sputtering

J.‐F. Bobo; H. Chatbi; M. Vergnat; L. Hennet; O. Lenoble; Ph. Bauer; M. Piecuch

J. Appl. Phys. 77, 5309–5313 (1995) https://doi.org/10.1063/1.359286

Abstract

View articletitled, Magnetic and structural properties of iron nitride thin films obtained by argon‐nitrogen reactive radio‐frequency sputtering

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The dielectric dispersion of insulating films with long‐range movements of charge carriers

Mitsumasa Iwamoto

J. Appl. Phys. 77, 5314–5321 (1995) https://doi.org/10.1063/1.359287

Abstract

View articletitled, The dielectric dispersion of insulating films with long‐range movements of charge carriers

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Piezoresistivity modeling of grain‐boundary junctions in positive temperature coefficient of resistivity BaTiO₃

Aldo B. Alles; Michael W. Murphy; Jesse J. Symanski; Christine L. Tremper; Walter A. Schulze

J. Appl. Phys. 77, 5322–5334 (1995) https://doi.org/10.1063/1.359288

Abstract

View articletitled, Piezoresistivity modeling of grain‐boundary junctions in positive temperature coefficient of resistivity BaTiO3

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The growth behavior of Pb_0.95La_0.05(Zr_0.7Ti_0.3)_0.9875O₃ films on silicon substrates synthesized by pulsed laser deposition

M. H. Yeh; K. S. Liu; Y. C. Ling; J. P. Wang; I. N. Lin

J. Appl. Phys. 77, 5335–5340 (1995) https://doi.org/10.1063/1.359289

Abstract

View articletitled, The growth behavior of Pb0.95La0.05(Zr0.7Ti0.3)0.9875O3 films on silicon substrates synthesized by pulsed laser deposition

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Dielectric spectroscopy of Ba(B_1/2^′B_1/2^″)O₃ complex perovskite ceramics: Correlations between ionic parameters and microwave dielectric properties. I. Infrared reflectivity study (10¹²–10¹⁴ Hz)

Rudolf Zurmühlen; Jan Petzelt; Stanislav Kamba; Valentin V. Voitsekhovskii; Enrico Colla; Nava Setter

J. Appl. Phys. 77, 5341–5350 (1995) https://doi.org/10.1063/1.359597

Abstract

View articletitled, Dielectric spectroscopy of Ba(B1/2′B1/2″)O3 complex perovskite ceramics: Correlations between ionic parameters and microwave dielectric properties. I. Infrared reflectivity study (1012–1014 Hz)

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Dielectric spectroscopy of Ba(B_1/2^′B_1/2^″)O₃ complex perovskite ceramics: Correlations between ionic parameters and microwave dielectric properties. II. Studies below the phonon eigenfrequencies (10²–10¹² Hz)

Rudolf Zurmühlen; Jan Petzelt; Stanislav Kamba; Gennadii Kozlov; Alexander Volkov; Boris Gorshunov; Dinesh Dube; Alexander Tagantsev; Nava Setter

J. Appl. Phys. 77, 5351–5364 (1995) https://doi.org/10.1063/1.359290

Abstract

View articletitled, Dielectric spectroscopy of Ba(B1/2′B1/2″)O3 complex perovskite ceramics: Correlations between ionic parameters and microwave dielectric properties. II. Studies below the phonon eigenfrequencies (102–1012 Hz)

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Evolution of photoluminescence of porous silicon under light exposure

I. M. Chang; G. S. Chuo; D. C. Chang; Y. F. Chen

J. Appl. Phys. 77, 5365–5368 (1995) https://doi.org/10.1063/1.359291

Abstract

View articletitled, Evolution of photoluminescence of porous silicon under light exposure

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A spectroscopic ellipsometry study of cerium dioxide thin films grown on sapphire by rf magnetron sputtering

S. Guo; H. Arwin; S. N. Jacobsen; K. Järrendahl; U. Helmersson

J. Appl. Phys. 77, 5369–5376 (1995) https://doi.org/10.1063/1.359225

Abstract

View articletitled, A spectroscopic ellipsometry study of cerium dioxide thin films grown on sapphire by rf magnetron sputtering

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Optical properties of Zn_1−xMg_xS_ySe_1−y epitaxial layers for blue‐green laser applications

U. Lunz; B. Jobst; S. Einfeldt; C. R. Becker; D. Hommel; G. Landwehr

J. Appl. Phys. 77, 5377–5380 (1995) https://doi.org/10.1063/1.359226

Abstract

View articletitled, Optical properties of Zn1−xMgxSySe1−y epitaxial layers for blue‐green laser applications

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Luminescent Sr_1−xEr_xF_2+x thin films grown on InP(100) substrates. I. Growth and physico‐chemical characterizations

A. S. Barrière; B. Y. Kim; B. Mombelli; B. Porté; S. Raoux

J. Appl. Phys. 77, 5381–5387 (1995) https://doi.org/10.1063/1.359227

Abstract

View articletitled, Luminescent Sr1−xErxF2+x thin films grown on InP(100) substrates. I. Growth and physico‐chemical characterizations

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Luminescent Sr_1−xEr_xF_2+x thin films grown on InP(100) substrates. II. Optical properties

A. S. Barrière; T. Césaire; L. Hirsch; B. Lambert; S. Raoux

J. Appl. Phys. 77, 5388–5393 (1995) https://doi.org/10.1063/1.359228

Abstract

View articletitled, Luminescent Sr1−xErxF2+x thin films grown on InP(100) substrates. II. Optical properties

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Electron‐beam‐pumped lasing in ZnSe epitaxial layers grown by metal‐organic vapor‐phase epitaxy

A. L. Gurskii; V. V. Gruzinskii; A. N. Gavrilenko; I. I. Kulak; A. I. Mitskovets; G. P. Yablonskii; M. Scholl; J. Söllner; M. Heuken

J. Appl. Phys. 77, 5394–5397 (1995) https://doi.org/10.1063/1.359229

Abstract

View articletitled, Electron‐beam‐pumped lasing in ZnSe epitaxial layers grown by metal‐organic vapor‐phase epitaxy

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Effect of hydrogenation and thermal annealing on the photoluminescence of p‐InP

Sathya Balasubramanian; K. S. R. Koteswara Rao; N. Balasubramanian; Vikram Kumar

J. Appl. Phys. 77, 5398–5405 (1995) https://doi.org/10.1063/1.359230

Abstract

View articletitled, Effect of hydrogenation and thermal annealing on the photoluminescence of p‐InP

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Velocity distributions of ions in the ablation plume of a Y₁Ba₂Cu₃O_x target

Kensuke Fukushima; Yukio Kanke; Massoud Badaye; Tadataka Morishita

J. Appl. Phys. 77, 5406–5410 (1995) https://doi.org/10.1063/1.359231

Abstract

View articletitled, Velocity distributions of ions in the ablation plume of a Y1Ba2Cu3Ox target

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Photon‐assisted oxidation of the GaAs(100) surface using water at 90 K

E. Ettedgui; Ken T. Park; Jianming Cao; Y. Gao; M. W. Ruckman

J. Appl. Phys. 77, 5411–5417 (1995) https://doi.org/10.1063/1.359232

Abstract

View articletitled, Photon‐assisted oxidation of the GaAs(100) surface using water at 90 K

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Impurity incorporation in vapor phase epitaxy: S in GaAs

H. Sandoval; J. Mimila‐Arroyo; J. C. Bourgoin

J. Appl. Phys. 77, 5418–5421 (1995) https://doi.org/10.1063/1.359233

Abstract

View articletitled, Impurity incorporation in vapor phase epitaxy: S in GaAs

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Atomic force microscopy and Raman spectroscopy studies on the oxidation of Cu thin films

Y. S. Gong; Chiapyng Lee; C. K. Yang

J. Appl. Phys. 77, 5422–5425 (1995) https://doi.org/10.1063/1.359234

Abstract

View articletitled, Atomic force microscopy and Raman spectroscopy studies on the oxidation of Cu thin films

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A matrix formalism for the simulation of pyroelectric sensors

D. Lienhard; B. Ploss

J. Appl. Phys. 77, 5426–5433 (1995) https://doi.org/10.1063/1.359235

Abstract

View articletitled, A matrix formalism for the simulation of pyroelectric sensors

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Measurement of optical nonlinearities using an elliptic Gaussian beam

S. M. Mian; J. P. Wicksted

J. Appl. Phys. 77, 5434–5436 (1995) https://doi.org/10.1063/1.359236

Abstract

View articletitled, Measurement of optical nonlinearities using an elliptic Gaussian beam

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Analysis of the offset voltage of InGaP/GaAs single‐, double‐, and composite double‐heterojunction bipolar transistors

Michael T. Fresina; Quesnell J. Hartmann; David A. Ahmari; Nathan F. Gardner; Gregory E. Stillman

J. Appl. Phys. 77, 5437–5439 (1995) https://doi.org/10.1063/1.359237

Abstract

View articletitled, Analysis of the offset voltage of InGaP/GaAs single‐, double‐, and composite double‐heterojunction bipolar transistors

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Compositional influence on photoluminescence linewidth and Stokes shift in ${In}_{x} {Al}_{z} {Ga}_{1−x−z} {As/In}_{y} {Al}_{u} {Ga}_{1−u−y} As/InP$ heterostructures grown by molecular beam epitaxy

H. Hillmer; R. Lösch; W. Schlapp

J. Appl. Phys. 77, 5440–5442 (1995) https://doi.org/10.1063/1.359533

Abstract

View articletitled, Compositional influence on photoluminescence linewidth and Stokes shift in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>z</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x−z</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">As/In</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>u</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−u−y</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As/InP</mi></math> heterostructures grown by molecular beam epitaxy

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Oxidation of Cu and Cu₃Ge thin films

H. K. Liou; J. S. Huang; K. N. Tu

J. Appl. Phys. 77, 5443–5445 (1995) https://doi.org/10.1063/1.359238

Abstract

View articletitled, Oxidation of Cu and Cu3Ge thin films

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Formation of amorphous Zr‐Al‐Cu‐Ni with a large supercooled liquid region by mechanical alloying

M. Seidel; J. Eckert; L. Schultz

J. Appl. Phys. 77, 5446–5448 (1995) https://doi.org/10.1063/1.359239

Abstract

View articletitled, Formation of amorphous Zr‐Al‐Cu‐Ni with a large supercooled liquid region by mechanical alloying

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Epitaxial thin films and heterostructures of a copper‐oxide‐based isotropic metallic oxide (La_8−xSr_xCu₈O₂₀)

C. B. Eom; R. J. Cava; Julia M. Phillips; D. J. Werder

J. Appl. Phys. 77, 5449–5451 (1995) https://doi.org/10.1063/1.359240

Abstract

View articletitled, Epitaxial thin films and heterostructures of a copper‐oxide‐based isotropic metallic oxide (La8−xSrxCu8O20)

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Investigation of thermomagnetic recording on MnBiAl films and observation of their recorded domains

Y. Xu; X. W. Zhang; W. K. Zhu; H. S. Yang; Y. J. Wang

J. Appl. Phys. 77, 5452–5454 (1995) https://doi.org/10.1063/1.359241

Abstract

View articletitled, Investigation of thermomagnetic recording on MnBiAl films and observation of their recorded domains

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Identification of plasma‐sheath resonances in a parallel‐plate plasma reactor

B. M. Annaratone; V. P. T. Ku; J. E. Allen

J. Appl. Phys. 77, 5455–5457 (1995) https://doi.org/10.1063/1.359242

Abstract

View articletitled, Identification of plasma‐sheath resonances in a parallel‐plate plasma reactor

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Ultrasound stimulated dissociation of Fe‐B pairs in silicon

S. S. Ostapenko; R. E. Bell

J. Appl. Phys. 77, 5458–5460 (1995) https://doi.org/10.1063/1.359243

Abstract

View articletitled, Ultrasound stimulated dissociation of Fe‐B pairs in silicon

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CdTe nanostructures prepared by thermal annealing

R. Ramírez‐Bon; F. J. Espinoza‐Beltrán; H. Arizpe‐Chávez; O. Zelaya‐Angel; F. Sánchez‐Sinencio

J. Appl. Phys. 77, 5461–5463 (1995) https://doi.org/10.1063/1.359244

Abstract

View articletitled, CdTe nanostructures prepared by thermal annealing

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Laser induced pyrolytic deposition of copper from (hexafluoroacetylacetonate)(trimethylvinylsilane) copper

M. Widmer; H. van den Bergh

J. Appl. Phys. 77, 5464–5466 (1995) https://doi.org/10.1063/1.359245

Abstract

View articletitled, Laser induced pyrolytic deposition of copper from (hexafluoroacetylacetonate)(trimethylvinylsilane) copper

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1.5 MeV ion‐channel guided x‐band free‐electron laser amplifier

K. Takayama; J. Kishiro; K. Ebihara; T. Ozaki; S. Hiramatsu; H. Katoh

J. Appl. Phys. 77, 5467–5469 (1995) https://doi.org/10.1063/1.359246

Abstract

View articletitled, 1.5 MeV ion‐channel guided x‐band free‐electron laser amplifier

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Raman spectra of CuAlSe₂ heteroepitaxial layers

Shigefusa Chichibu; Atsushi Kamata

J. Appl. Phys. 77, 5470–5472 (1995) https://doi.org/10.1063/1.359247

Abstract

View articletitled, Raman spectra of CuAlSe2 heteroepitaxial layers

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Effects of excess oxygen on the properties of reactively sputtered RuO_x thin films

Jeong‐gun Lee; Young Tae Kim; Suk‐ki Min; Sung Ho Choh

J. Appl. Phys. 77, 5473–5475 (1995) https://doi.org/10.1063/1.359595

Abstract

View articletitled, Effects of excess oxygen on the properties of reactively sputtered RuOx thin films

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Empirical temperature dependence of the refractive index of semiconductors

P. J. L. Hervé; L. K. J. Vandamme

J. Appl. Phys. 77, 5476–5477 (1995) https://doi.org/10.1063/1.359248

Abstract

View articletitled, Empirical temperature dependence of the refractive index of semiconductors

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Effects of an impurity sheet in the well on resonant tunneling in double‐barrier structures

Huaizhe Xu; Guanghua Chen

J. Appl. Phys. 77, 5478–5480 (1995) https://doi.org/10.1063/1.359249

Abstract

View articletitled, Effects of an impurity sheet in the well on resonant tunneling in double‐barrier structures

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LiTaO₃ crystal periodically poled by applying an external pulsed field

Shi‐ning Zhu; Yong‐yuan Zhu; Zhi‐yong Zhang; Hong Shu; Hai‐feng Wang; Jing‐fen Hong; Chuan‐zhen Ge; Nai‐ben Ming

J. Appl. Phys. 77, 5481–5483 (1995) https://doi.org/10.1063/1.359250

Abstract

View articletitled, LiTaO3 crystal periodically poled by applying an external pulsed field

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Comment on ‘‘Anisotropy studies of molecular‐beam‐epitaxy‐grown Co(111) thin films by ferromagnetic resonance’’ [J. Appl. Phys. 75, 6492 (1994)]

J. O. Artman

J. Appl. Phys. 77, 5484–5485 (1995) https://doi.org/10.1063/1.359251

Abstract

View articletitled, Comment on ‘‘Anisotropy studies of molecular‐beam‐epitaxy‐grown Co(111) thin films by ferromagnetic resonance’’ [J. Appl. Phys. 75, 6492 (1994)]

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Response to ‘‘Comment on ‘Anisotropy studies of molecular‐beam epitaxy‐grown Co(111) thin films by ferromagnetic resonance’ ’’ [J. Appl. Phys. 77, 5484 (1995)]

F. Schreiber; A. Soliman; P. Bödeker; R. Meckenstock; K. Bröhl; J. Pelzl; I. A. Garifullin

J. Appl. Phys. 77, 5486 (1995) https://doi.org/10.1063/1.359252

Abstract

View articletitled, Response to ‘‘Comment on ‘Anisotropy studies of molecular‐beam epitaxy‐grown Co(111) thin films by ferromagnetic resonance’ ’’ [J. Appl. Phys. 77, 5484 (1995)]

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Erratum: ‘‘Epitaxial growth of RbTiOPO₄ films on KTiOPO₄ substrates by excimer laser ablation technique’’ [J. Appl. Phys. 76, 8215 (1994)]

Z. G. Liu; J. M. Liu; N. B. Ming; J. Y. Wang; L. P. Shi; Y. G. Liu; M. H. Jiang

J. Appl. Phys. 77, 5487 (1995) https://doi.org/10.1063/1.359608

View articletitled, Erratum: ‘‘Epitaxial growth of RbTiOPO4 films on KTiOPO4 substrates by excimer laser ablation technique’’ [J. Appl. Phys. 76, 8215 (1994)]

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