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Empirical forms for the electron/atom elastic scattering cross sections from 0.1 to 30 keV
J. Appl. Phys. 76, 2016–2022 (1994)
https://doi.org/10.1063/1.357669
The photonic band edge optical diode
J. Appl. Phys. 76, 2023–2026 (1994)
https://doi.org/10.1063/1.358512
Numerical investigation of the self‐focusing of broad‐bandwidth laser light with applied angular dispersion
J. Appl. Phys. 76, 2027–2035 (1994)
https://doi.org/10.1063/1.357670
Transmission loss characteristics of telluride‐based chalcogenide glass optical fibers
J. Appl. Phys. 76, 2036–2040 (1994)
https://doi.org/10.1063/1.357671
Electron‐density and energy distributions in a planar inductively coupled discharge
J. Appl. Phys. 76, 2041–2047 (1994)
https://doi.org/10.1063/1.357672
Strain and mosaic spread of carbon and gallium co‐implanted GaAs
J. Appl. Phys. 76, 2066–2069 (1994)
https://doi.org/10.1063/1.357615
Al‐O interactions in ion‐implanted crystalline silicon
G. Galvagno; A. La Ferla; C. Spinella; F. Priolo; V. Raineri; Lucio Torrisi; E. Rimini; A. Carnera; A. Gasparotto
J. Appl. Phys. 76, 2070–2077 (1994)
https://doi.org/10.1063/1.357616
Suppression of AlSb oxidation with hydrocarbon passivation layer induced by MeV‐He+ irradiation
J. Appl. Phys. 76, 2078–2085 (1994)
https://doi.org/10.1063/1.357617
B‐site order and infrared reflectivity in A(B′B″)O3 complex perovskite ceramics
J. Appl. Phys. 76, 2086–2092 (1994)
https://doi.org/10.1063/1.357618
Range profiles of 600–1200 keV Xe+ implanted in KTiOPO4
J. Appl. Phys. 76, 2104–2108 (1994)
https://doi.org/10.1063/1.357621
Role of structural relaxations in the fracture of vitreous silica
J. Appl. Phys. 76, 2109–2114 (1994)
https://doi.org/10.1063/1.357622
Dilatometric and thermo‐optic properties of alkaline earth and cadmium fluorides between 300 and 1300 K
J. Appl. Phys. 76, 2122–2128 (1994)
https://doi.org/10.1063/1.358459
Characterization of Pb0.97Nd0.02(Zr0.55Ti0.45)O3 thin films prepared by pulsed laser ablation
J. Appl. Phys. 76, 2139–2143 (1994)
https://doi.org/10.1063/1.357625
Structure and performance of Si/Mo multilayer mirrors for the extreme ultraviolet
J. M. Slaughter; Dean W. Schulze; C. R. Hills; A. Mirone; R. Stalio; R. N. Watts; C. Tarrio; T. B. Lucatorto; M. Krumrey; P. Mueller; Charles M. Falco
J. Appl. Phys. 76, 2144–2156 (1994)
https://doi.org/10.1063/1.357626
Infrared spectroscopy study of initial stages of oxidation of hydrogen‐terminated Si surfaces stored in air
J. Appl. Phys. 76, 2157–2163 (1994)
https://doi.org/10.1063/1.357627
Chemically vapor deposited diamond films grown on titanium nitride coated and uncoated iron substrates
J. Appl. Phys. 76, 2164–2168 (1994)
https://doi.org/10.1063/1.357628
Reaction of Ta thin film with single crystalline (001) β‐SiC
J. Appl. Phys. 76, 2169–2175 (1994)
https://doi.org/10.1063/1.357629
X‐ray in situ observation of relaxation and diffusion processes in Si1−xGex layers on silicon substrates
J. Appl. Phys. 76, 2191–2196 (1994)
https://doi.org/10.1063/1.357633
Structural investigation of Fe silicide films grown by pulsed laser deposition
J. Appl. Phys. 76, 2202–2207 (1994)
https://doi.org/10.1063/1.357635
Ohmic contacts on diamond by B ion implantation and TiC‐Au and TaSi2‐Au metallization
J. Appl. Phys. 76, 2208–2212 (1994)
https://doi.org/10.1063/1.358510
Donor‐doping characteristics of gas‐source molecular beam epitaxial Si and Si1−xGex using phosphine
J. Appl. Phys. 76, 2213–2215 (1994)
https://doi.org/10.1063/1.357636
Femtosecond relaxation of minority electrons in heavily carbon‐doped GaAs
J. Appl. Phys. 76, 2255–2259 (1994)
https://doi.org/10.1063/1.357644
Charged defect states in intrinsic hydrogenated amorphous silicon films
J. Appl. Phys. 76, 2260–2263 (1994)
https://doi.org/10.1063/1.357645
Temperature effects in the multiphoton photoemission of laser irradiated α‐SiO2
J. Appl. Phys. 76, 2264–2269 (1994)
https://doi.org/10.1063/1.357646
Suppression of interface‐state generation in reoxidized nitrided oxide gate dielectrics
J. Appl. Phys. 76, 2284–2292 (1994)
https://doi.org/10.1063/1.357648
Formation of ohmic contacts to p‐type diamond using carbide forming metals
J. Appl. Phys. 76, 2293–2298 (1994)
https://doi.org/10.1063/1.357649
The effect of electric field on the excitonic states in coupled quantum well structures
J. Appl. Phys. 76, 2299–2305 (1994)
https://doi.org/10.1063/1.357601
Hole drift mobility measurements in amorphous silicon‐carbon alloys
J. Appl. Phys. 76, 2310–2315 (1994)
https://doi.org/10.1063/1.358508
Self‐consistent k⋅p band structure calculation for AlGaAs/InGaAs pseudomorphic high electron mobility transistors
J. Appl. Phys. 76, 2316–2323 (1994)
https://doi.org/10.1063/1.357603
InAlAs/InP heterostructures: Influence of a thin InAs layer at the interface
J. Appl. Phys. 76, 2324–2329 (1994)
https://doi.org/10.1063/1.357604
Electrical transport properties and confinement potential analysis of buried AlGaAs/GaAs quantum wires
J. Appl. Phys. 76, 2330–2335 (1994)
https://doi.org/10.1063/1.357605
Valley current of three‐dimensional resonant tunneling diode studied by the improved optical model
J. Appl. Phys. 76, 2343–2346 (1994)
https://doi.org/10.1063/1.357612
Influence of hydrogenation on inter‐ and intragranular critical currents in YBa2Cu3O7−δ
J. Appl. Phys. 76, 2357–2360 (1994)
https://doi.org/10.1063/1.357581
Surface pinning and Lorentz force dependence of transport critical current in NbTa thin films and heterostructures
J. Appl. Phys. 76, 2361–2367 (1994)
https://doi.org/10.1063/1.357582
Quasiparticle trapping and the density of states in superconducting proximity structures
J. Appl. Phys. 76, 2368–2375 (1994)
https://doi.org/10.1063/1.357583
Electrical transport and superconductivity in YBa2Cu3O7−δ ‐YBa2HfO5.5 percolation system
J. Appl. Phys. 76, 2376–2379 (1994)
https://doi.org/10.1063/1.357584
Structure and magnetic properties of Co/Cu multilayer films
J. Appl. Phys. 76, 2387–2394 (1994)
https://doi.org/10.1063/1.357586
Initial permeability of composite‐anisotropy multilayer films
J. Appl. Phys. 76, 2395–2398 (1994)
https://doi.org/10.1063/1.357587
Fourier spectroscopy of elastic modes and anharmonic effects in LiNbO3
J. Appl. Phys. 76, 2399–2404 (1994)
https://doi.org/10.1063/1.357588
Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3 thin films of varying thickness: Blocking layer model
J. Appl. Phys. 76, 2405–2413 (1994)
https://doi.org/10.1063/1.357589
Electroluminescence of pure poly(N‐vinylcarbazole) and its blends with a multiblock copolymer
J. Appl. Phys. 76, 2419–2422 (1994)
https://doi.org/10.1063/1.358458
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
J. Appl. Phys. 76, 2429–2434 (1994)
https://doi.org/10.1063/1.357592
Raman and x‐ray studies of Ce1−xRExO2−y, where RE=La, Pr, Nd, Eu, Gd, and Tb
J. Appl. Phys. 76, 2435–2441 (1994)
https://doi.org/10.1063/1.357593
Conduction and valence band photoemission mechanisms in two‐dimensional–three‐dimensional structures
J. Appl. Phys. 76, 2442–2447 (1994)
https://doi.org/10.1063/1.357594
Third‐order nonlinear susceptibility in GaAs/AlxGa1−xAs superlattice with a special layered structure
J. Appl. Phys. 76, 2455–2458 (1994)
https://doi.org/10.1063/1.357596
Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy
J. Appl. Phys. 76, 2459–2465 (1994)
https://doi.org/10.1063/1.357597
Identification of defects and impurities in chemical‐vapor‐deposited diamond through infrared spectroscopy
J. Appl. Phys. 76, 2466–2472 (1994)
https://doi.org/10.1063/1.357598
Structural and optoelectronic properties of Ge‐rich hydrogenated amorphous silicon‐germanium alloys
J. Appl. Phys. 76, 2473–2478 (1994)
https://doi.org/10.1063/1.357599
Amplification of an electromagnetic wave in the polariton mode of magnetoplasma
J. Appl. Phys. 76, 2479–2483 (1994)
https://doi.org/10.1063/1.357600
A back‐side passivation film on a‐Si:H thin film transistor
J. Appl. Phys. 76, 2484–2489 (1994)
https://doi.org/10.1063/1.357606
Response linearity of Nb tunnel junction detectors for photon energies from 1.5 to 6.4 keV
J. Appl. Phys. 76, 2490–2493 (1994)
https://doi.org/10.1063/1.357607
Characteristics of pseudomorphic AlGaAs/InxGa1−xAs (0≤x≤0.25) doped‐channel field‐effect transistors
J. Appl. Phys. 76, 2494–2498 (1994)
https://doi.org/10.1063/1.357608
Electrical characterization and modeling of wide‐band‐gap porous silicon p‐n diodes
J. Appl. Phys. 76, 2499–2504 (1994)
https://doi.org/10.1063/1.357609
Loss mechanisms in polyimide waveguides
T. C. Kowalczyk; T. Kosc; K. D. Singer; P. A. Cahill; C. H. Seager; M. B. Meinhardt; A. J. Beuhler; D. A. Wargowski
J. Appl. Phys. 76, 2505–2508 (1994)
https://doi.org/10.1063/1.357610
Steady state model for facet heating leading to thermal runaway in semiconductor lasers
J. Appl. Phys. 76, 2509–2521 (1994)
https://doi.org/10.1063/1.358509
Modeling of a low‐intensity electro‐optical semiconductor switching device due to intrinsic photoconductivity
J. Appl. Phys. 76, 2522–2528 (1994)
https://doi.org/10.1063/1.357613
Surface modification of YBa2Cu3Oy thin films with a scanning tunneling microscope
J. Appl. Phys. 76, 2535–2537 (1994)
https://doi.org/10.1063/1.357566
A GaAs/AlAs/AlGaAs and GaAs/AlGaAs stacked quantum well infrared photodetector for 3–5 and 8–14 μm detection
J. Appl. Phys. 76, 2538–2540 (1994)
https://doi.org/10.1063/1.357567
Preparation of barium strontium titanate thin film capacitors on silicon by metallorganic decomposition
J. Appl. Phys. 76, 2541–2543 (1994)
https://doi.org/10.1063/1.357568
Transport property of Si/Si1−xGex/Si p‐type modulation doped double heterostructure
J. Appl. Phys. 76, 2544–2546 (1994)
https://doi.org/10.1063/1.357569
Voltage tunable multiple quantum well distributed feedback filter with an electron beam written Schottky grating
J. Appl. Phys. 76, 2550–2552 (1994)
https://doi.org/10.1063/1.358457
Hysteresis in the switching of hot electrons in InP/InGaAs double‐heterojunction bipolar transistors
J. Appl. Phys. 76, 2559–2561 (1994)
https://doi.org/10.1063/1.358456
Erratum: ‘‘Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition’’ [J. Appl. Phys. 73, 4095 (1993)]
Paul R. Berger; S. N. G. Chu; R. A. Logan; Erin Byrne; D. Coblentz; James Lee, III; Nhan T. Ha; N. K. Dutta
J. Appl. Phys. 76, 2562 (1994)
https://doi.org/10.1063/1.358542
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.