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Optical characterization of KTiOPO4 periodically segmented waveguides for second‐harmonic generation of blue light
J. Appl. Phys. 74, 4298–4302 (1993)
https://doi.org/10.1063/1.354393
Power and efficiency limits for internal combustion engines via methods of finite‐time thermodynamics
J. Appl. Phys. 74, 4317–4322 (1993)
https://doi.org/10.1063/1.354396
Low‐angle x‐ray diffraction with in situ annealing: Application to W/Cu multilayers
J. Appl. Phys. 74, 4331–4338 (1993)
https://doi.org/10.1063/1.354398
Electrical characterization of neutron irradiation induced defects in undoped epitaxially grown n‐GaAs
J. Appl. Phys. 74, 4339–4342 (1993)
https://doi.org/10.1063/1.354399
Defect studies in oxygen‐ion‐irradiated silicon‐based metal‐insulator‐semiconductor structures
J. Appl. Phys. 74, 4343–4346 (1993)
https://doi.org/10.1063/1.354400
β‐FeSi2 in (111)Si and in (001) Si formed by ion‐beam synthesis
J. Appl. Phys. 74, 4347–4353 (1993)
https://doi.org/10.1063/1.354401
Observation of contact holes by atomic force microscopy with a ZnO whisker tip
J. Appl. Phys. 74, 4354–4356 (1993)
https://doi.org/10.1063/1.355313
Effect of ion energy on Sn donor activation and defect production in molecular beam epitaxy GaAs doped with Sn ions during growth
J. H. Thompson; G. A. C. Jones; D. A. Ritchie; E. H. Linfield; A. C. Churchill; G. W. Smith; M. Houlton; D. Lee; C. R. Whitehouse
J. Appl. Phys. 74, 4375–4381 (1993)
https://doi.org/10.1063/1.354405
Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
J. Appl. Phys. 74, 4430–4437 (1993)
https://doi.org/10.1063/1.354414
Simulations and experiments of SiC heteroepitaxial growth on Si(001) surface
J. Appl. Phys. 74, 4438–4445 (1993)
https://doi.org/10.1063/1.354385
Friction and wear of plasma‐deposited diamond films
J. Appl. Phys. 74, 4446–4454 (1993)
https://doi.org/10.1063/1.354386
Phase transitions during solid‐state formation of cobalt germanide by rapid thermal annealing
J. Appl. Phys. 74, 4455–4460 (1993)
https://doi.org/10.1063/1.354387
Epitaxial growth of Al films on modified AlAs(001) surfaces
J. Appl. Phys. 74, 4461–4471 (1993)
https://doi.org/10.1063/1.354362
Role of hydrogen and oxygen in diamond synthesis using carbon‐dioxide–methane‐gas mixtures
J. Appl. Phys. 74, 4483–4489 (1993)
https://doi.org/10.1063/1.354364
Process‐induced mechanical stress in isolation structures studied by micro‐Raman spectroscopy
J. Appl. Phys. 74, 4490–4500 (1993)
https://doi.org/10.1063/1.354365
Structure and property of polycrystalline (Fe0.99Mo0.01)78Si9B13 alloys
J. Appl. Phys. 74, 4501–4505 (1993)
https://doi.org/10.1063/1.354366
Reactive‐flow simulation of the hot‐filament chemical‐vapor deposition of diamond
J. Appl. Phys. 74, 4513–4520 (1993)
https://doi.org/10.1063/1.354368
Reverse‐bias annealing kinetics of Mg‐H complexes in InP
J. Appl. Phys. 74, 4521–4526 (1993)
https://doi.org/10.1063/1.354369
On the fundamental role of oxygen for the photochromic effect of WO3
J. Appl. Phys. 74, 4527–4533 (1993)
https://doi.org/10.1063/1.354370
Resolution degradation of coaxial p‐type germanium detectors due to hole trapping by point defects
J. Appl. Phys. 74, 4557–4560 (1993)
https://doi.org/10.1063/1.354374
Electron‐interface LO phonon scattering rates in quantum wells in a quantizing magnetic field
J. Appl. Phys. 74, 4561–4564 (1993)
https://doi.org/10.1063/1.355312
Waveguide effects in quantum wires with double‐bend discontinuities
J. Appl. Phys. 74, 4590–4597 (1993)
https://doi.org/10.1063/1.354377
Degradation of oxides in metal‐oxide‐semiconductor capacitors under high‐field stress
J. Appl. Phys. 74, 4598–4607 (1993)
https://doi.org/10.1063/1.354378
Reaction mechanism of electrochemical‐vapor deposition of yttria‐stabilized zirconia film
J. Appl. Phys. 74, 4608–4613 (1993)
https://doi.org/10.1063/1.354379
Preparation of p‐type silicon films by plasma decomposition of a SiH4/H2/BF3 gas mixture
J. Appl. Phys. 74, 4614–4619 (1993)
https://doi.org/10.1063/1.354380
A geometrical rationalization of the special properties of the 14° [001] grain boundary in YBa2Cu3O7−δ
J. Appl. Phys. 74, 4627–4630 (1993)
https://doi.org/10.1063/1.354382
Microstructural origin of in‐plane magnetic anisotropy in magnetron in‐line sputtered CoPtCr thin‐film disks
J. Appl. Phys. 74, 4643–4650 (1993)
https://doi.org/10.1063/1.354384
Melt‐spun PrCo5 and related magnet materials: Coercivity enhancement by carbon addition
J. Appl. Phys. 74, 4651–4659 (1993)
https://doi.org/10.1063/1.354355
Hydrothermal BaTiO3 films on silicon: Morphological and chemical characterization
J. Appl. Phys. 74, 4664–4672 (1993)
https://doi.org/10.1063/1.354357
Magnitude of the piezoelectric field in (111)B InyGa1−yAs strained‐layer quantum wells
J. Appl. Phys. 74, 4681–4684 (1993)
https://doi.org/10.1063/1.354359
Electrical and optical properties of thermally evaporated LiBO2 films
J. Appl. Phys. 74, 4691–4693 (1993)
https://doi.org/10.1063/1.354361
Concentration‐dependent optical‐absorption coefficient in n‐type GaAs
J. Appl. Phys. 74, 4694–4702 (1993)
https://doi.org/10.1063/1.354336
Luminescence processes in Tm3+‐ and Er3+‐ion‐activated, Yb3+‐ion‐sensitized infrared upconversion devices
J. Appl. Phys. 74, 4703–4709 (1993)
https://doi.org/10.1063/1.354337
Second‐harmonic responses of modulated photoreflectance in semiconductors
J. Appl. Phys. 74, 4710–4715 (1993)
https://doi.org/10.1063/1.354338
Neutral and ion emissions accompanying pulsed excimer laser irradiation of polytetrafluoroethylene
J. Appl. Phys. 74, 4729–4736 (1993)
https://doi.org/10.1063/1.354341
Magnetic properties of glass‐metal nanocomposites prepared by the sol‐gel route and hot pressing
J. Appl. Phys. 74, 4746–4749 (1993)
https://doi.org/10.1063/1.354344
Transition between Ge segregation and trapping during high‐pressure oxidation of GexSi1−x/Si
J. Appl. Phys. 74, 4750–4755 (1993)
https://doi.org/10.1063/1.354345
Temperature limits on infrared detectivities of InAs/InxGa1−xSb superlattices and bulk HgxCd1−xTe
J. Appl. Phys. 74, 4774–4776 (1993)
https://doi.org/10.1063/1.354348
Extension of the Kronig–Penney model for Γ‐X mixing in superlattices
J. Appl. Phys. 74, 4777–4779 (1993)
https://doi.org/10.1063/1.354349
Quenching of porous silicon photoluminescence by deposition of metal adsorbates
J. Appl. Phys. 74, 4783–4785 (1993)
https://doi.org/10.1063/1.354350
rf excited 1.1 W/cm waveguide CO2 laser
J. Appl. Phys. 74, 4786–4788 (1993)
https://doi.org/10.1063/1.354351
Optimized performance of quantum well intersubband infrared detectors: Photovoltaic versus photoconductive operation
J. Appl. Phys. 74, 4789–4791 (1993)
https://doi.org/10.1063/1.354352
Phase transitions and epitaxial Ni3Si formation on Ni(100) after high dose silicon ion implantation
J. Appl. Phys. 74, 4792–4794 (1993)
https://doi.org/10.1063/1.354353
Suppression of intersubband nonradiative transitions by a magnetic field in quantum well laser devices
J. Appl. Phys. 74, 4795–4797 (1993)
https://doi.org/10.1063/1.354354
Difference‐frequency generation of near infrared picosecond pulses by noncritical temperature tuning of LiB3O5
J. Appl. Phys. 74, 4798–4800 (1993)
https://doi.org/10.1063/1.354327
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.