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Inductive noise thermometer: Theoretical aspects

Heikki Seppä; Timo Varpula

J. Appl. Phys. 74, 771–776 (1993) https://doi.org/10.1063/1.354865

Abstract

View articletitled, Inductive noise thermometer: Theoretical aspects

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Solving the one‐dimensional quantum mechanics problems using the matter wave multireflection

Wiesl/aw Polak

J. Appl. Phys. 74, 777–782 (1993) https://doi.org/10.1063/1.355329

Abstract

View articletitled, Solving the one‐dimensional quantum mechanics problems using the matter wave multireflection

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Temperature dependence of the photorefractive effect in undoped Bi₁₂GeO₂₀

Istvan Foldvari; Joel J. Martin; Charles A. Hunt; Richard C. Powell; Roger J. Reeves; Agnes Peter

J. Appl. Phys. 74, 783–789 (1993) https://doi.org/10.1063/1.354866

Abstract

View articletitled, Temperature dependence of the photorefractive effect in undoped Bi12GeO20

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Spectroscopy and laser performance of Nd doped gadolinium lithium fluoride

X. X. Zhang; A. B. Villaverde; M. Bass; B. H. T. Chai; H. Weidner; R. I. Ramotar; R. E. Peale

J. Appl. Phys. 74, 790–796 (1993) https://doi.org/10.1063/1.354867

Abstract

View articletitled, Spectroscopy and laser performance of Nd doped gadolinium lithium fluoride

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Photopumped room‐temperature continuous operation of native‐oxide‐embedded Al_yGa_1−yAs‐GaAs‐In_xGa_1−xAs quantum‐well‐heterostructure lasers

A. R. Sugg; E. I. Chen; T. A. Richard; N. Holonyak, Jr.; K. C. Hsieh

J. Appl. Phys. 74, 797–801 (1993) https://doi.org/10.1063/1.354868

Abstract

View articletitled, Photopumped room‐temperature continuous operation of native‐oxide‐embedded AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well‐heterostructure lasers

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Irradiation nonuniformity due to imperfections of laser beams

M. Murakami; K. Nishihara; H. Azechi

J. Appl. Phys. 74, 802–808 (1993) https://doi.org/10.1063/1.354869

Abstract

View articletitled, Irradiation nonuniformity due to imperfections of laser beams

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Dependence of window effects on Al content of a window layer in high‐power AlGaAs window structure lasers with window grown on facets

M. Matsumoto; K. Sasaki; M. Kondo; T. Ishizumi; T. Takeoka; S. Yamamoto

J. Appl. Phys. 74, 809–812 (1993) https://doi.org/10.1063/1.354870

Abstract

View articletitled, Dependence of window effects on Al content of a window layer in high‐power AlGaAs window structure lasers with window grown on facets

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Theoretical and experimental studies of fanning effects in photorefractive crystals

Ping Xie; Yan‐Hua Hong; Jian‐Hua Dai; Yong Zhu; Hong‐Jun Zhang

J. Appl. Phys. 74, 813–818 (1993) https://doi.org/10.1063/1.354871

Abstract

View articletitled, Theoretical and experimental studies of fanning effects in photorefractive crystals

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600‐nm wavelength range GaInP/AlInP quasi‐quaternary compounds and lasers prepared by gas‐source molecular‐beam epitaxy

Yawara Kaneko; Ichirou Nomura; Katsumi Kishino; Akihiko Kikuchi

J. Appl. Phys. 74, 819–824 (1993) https://doi.org/10.1063/1.354872

Abstract

View articletitled, 600‐nm wavelength range GaInP/AlInP quasi‐quaternary compounds and lasers prepared by gas‐source molecular‐beam epitaxy

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Transport model of charged particle behavior in the afterglow region of a microwave generated oxygen plasma

Ta‐Chin Wei; Jonathan Phillips

J. Appl. Phys. 74, 825–831 (1993) https://doi.org/10.1063/1.354873

Abstract

View articletitled, Transport model of charged particle behavior in the afterglow region of a microwave generated oxygen plasma

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Delayed expansions and ionization instabilities observed in the current decay phase of a SF₆ spark discharge

Tetsuya Akitsu; Takayoshi Ohtsu; Hidenori Matsuzawa; Shinji Suganomata

J. Appl. Phys. 74, 832–838 (1993) https://doi.org/10.1063/1.354874

Abstract

View articletitled, Delayed expansions and ionization instabilities observed in the current decay phase of a SF6 spark discharge

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Comparisons of one‐ and two‐dimensional three‐moment fluid models for rf glow discharges

Fongray Frank Young; Chwan‐Hwa ‘‘John’’ Wu

J. Appl. Phys. 74, 839–847 (1993) https://doi.org/10.1063/1.354875

Abstract

View articletitled, Comparisons of one‐ and two‐dimensional three‐moment fluid models for rf glow discharges

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Control of reactive plasmas in a multicusp plasma source equipped with a movable magnetic filter

Osamu Fukumasa; Hiroshi Naitou; Satoshi Sakiyama

J. Appl. Phys. 74, 848–852 (1993) https://doi.org/10.1063/1.354876

Abstract

View articletitled, Control of reactive plasmas in a multicusp plasma source equipped with a movable magnetic filter

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The role of negative ions in the formation of particles in low‐pressure plasmas

Seung J. Choi; Mark J. Kushner

J. Appl. Phys. 74, 853–861 (1993) https://doi.org/10.1063/1.354877

Abstract

View articletitled, The role of negative ions in the formation of particles in low‐pressure plasmas

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Time‐resolved electric‐field measurements in 30 kHz hydrogen discharges by optical emission Stark spectroscopy

Jean‐Paul Booth; Jacques Derouard; Majida Fadlallah; Nader Sadeghi

J. Appl. Phys. 74, 862–867 (1993) https://doi.org/10.1063/1.354878

Abstract

View articletitled, Time‐resolved electric‐field measurements in 30 kHz hydrogen discharges by optical emission Stark spectroscopy

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Deep level transient spectroscopy of high‐energy heavy ion irradiation‐induced defects in n‐type germanium

P. Marie; M. Levalois; P. Bogdanski

J. Appl. Phys. 74, 868–871 (1993) https://doi.org/10.1063/1.354879

Abstract

View articletitled, Deep level transient spectroscopy of high‐energy heavy ion irradiation‐induced defects in n‐type germanium

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Surface properties of perovskites and their response to ion bombardment

Sharmila M. Mukhopadhyay; Tim C. S. Chen

J. Appl. Phys. 74, 872–876 (1993) https://doi.org/10.1063/1.354880

Abstract

View articletitled, Surface properties of perovskites and their response to ion bombardment

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Surface roughness and the scattering of glancing‐angle x rays: Application to x‐ray lenses

J. C. Kimball; D. Bittel

J. Appl. Phys. 74, 877–883 (1993) https://doi.org/10.1063/1.354881

Abstract

View articletitled, Surface roughness and the scattering of glancing‐angle x rays: Application to x‐ray lenses

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Vacancy‐type defects in crystalline and amorphous SiO₂

S. Dannefaer; T. Bretagnon; D. Kerr

J. Appl. Phys. 74, 884–890 (1993) https://doi.org/10.1063/1.354882

Abstract

View articletitled, Vacancy‐type defects in crystalline and amorphous SiO2

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Structural and optical band‐gap properties of the amorphous semiconducting Si_1−xB_x alloy

J. R. A. Carlsson; X.‐H. Li; S. F. Gong; H. T. G. Hentzell

J. Appl. Phys. 74, 891–896 (1993) https://doi.org/10.1063/1.354883

Abstract

View articletitled, Structural and optical band‐gap properties of the amorphous semiconducting Si1−xBx alloy

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Oxidation processes in undoped GaAs and in Si‐doped GaAs

A. Rim; R. Beserman

J. Appl. Phys. 74, 897–901 (1993) https://doi.org/10.1063/1.354884

Abstract

View articletitled, Oxidation processes in undoped GaAs and in Si‐doped GaAs

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Molecular‐dynamics simulation of mechanical alloying for the Al₅₀Ti₅₀ alloy

J. Lu; J. A. Szpunar

J. Appl. Phys. 74, 902–904 (1993) https://doi.org/10.1063/1.354885

Abstract

View articletitled, Molecular‐dynamics simulation of mechanical alloying for the Al50Ti50 alloy

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Effect of structural incoherence on the low‐angle diffraction pattern of synthetic multilayer materials

Zengli Xu; Zizhou Tang; S. D. Kevan; Thomas Novet; David C. Johnson

J. Appl. Phys. 74, 905–912 (1993) https://doi.org/10.1063/1.354857

Abstract

View articletitled, Effect of structural incoherence on the low‐angle diffraction pattern of synthetic multilayer materials

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Hydrogen effects on oxygen precipitation in Czochralski silicon crystals

Akito Hara; Masaki Aoki; Tetsuo Fukuda; Akira Ohsawa

J. Appl. Phys. 74, 913–916 (1993) https://doi.org/10.1063/1.354858

Abstract

View articletitled, Hydrogen effects on oxygen precipitation in Czochralski silicon crystals

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Effects of dopants on dynamic behavior of dislocations and mechanical strength in InP

Ichiro Yonenaga; Koji Sumino

J. Appl. Phys. 74, 917–924 (1993) https://doi.org/10.1063/1.354859

Abstract

View articletitled, Effects of dopants on dynamic behavior of dislocations and mechanical strength in InP

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Theoretical consideration of misfit dislocation nucleation by partial dislocations in [001] strained‐layer heterostructures

J. Zou; D. J. H. Cockayne

J. Appl. Phys. 74, 925–930 (1993) https://doi.org/10.1063/1.354860

Abstract

View articletitled, Theoretical consideration of misfit dislocation nucleation by partial dislocations in [001] strained‐layer heterostructures

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ac conductivity in Bi₄Sr₃Ca₃Cu_yO_x (y=0–5) and Bi₄Sr₃Ca_3−zLi_zCu₄O_x (z=0.1–1.0) semiconducting oxide glasses

S. Mollah; K. K. Som; K. Bose; B. K. Chaudhuri

J. Appl. Phys. 74, 931–937 (1993) https://doi.org/10.1063/1.355328

Abstract

View articletitled, ac conductivity in Bi4Sr3Ca3CuyOx (y=0–5) and Bi4Sr3Ca3−zLizCu4Ox (z=0.1–1.0) semiconducting oxide glasses

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Many‐body effect in the static yield stress of electrorheological fluid

Montonori Ota; Tetsuo Miyamoto

J. Appl. Phys. 74, 938–941 (1993) https://doi.org/10.1063/1.354834

Abstract

View articletitled, Many‐body effect in the static yield stress of electrorheological fluid

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Deformation of an electrorheological chain under flow

Tian‐jie Chen; Xuesong Zhang; R. N. Zitter; R. Tao

J. Appl. Phys. 74, 942–944 (1993) https://doi.org/10.1063/1.354835

Abstract

View articletitled, Deformation of an electrorheological chain under flow

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Elastic anomalies of barium titanate

B. Subramanyam; K. S. Viswanathan

J. Appl. Phys. 74, 945–954 (1993) https://doi.org/10.1063/1.354836

Abstract

View articletitled, Elastic anomalies of barium titanate

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Thermodynamic and magnetic properties of metastable Fe_xCu_100−x solid solutions formed by mechanical alloying

E. Ma; M. Atzmon; F. E. Pinkerton

J. Appl. Phys. 74, 955–962 (1993) https://doi.org/10.1063/1.354837

Abstract

View articletitled, Thermodynamic and magnetic properties of metastable FexCu100−x solid solutions formed by mechanical alloying

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Kinetics of pulsed ultraviolet laser induced oxidation of c‐Ge: The role of optical coupling and material losses

F. Vega; C. N. Afonso; C. Ortega; J. Siejka

J. Appl. Phys. 74, 963–968 (1993) https://doi.org/10.1063/1.354838

Abstract

View articletitled, Kinetics of pulsed ultraviolet laser induced oxidation of c‐Ge: The role of optical coupling and material losses

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Electromigration in Al(Cu) two‐level structures: Effect of Cu and kinetics of damage formation

C.‐K. Hu; M. B. Small; P. S. Ho

J. Appl. Phys. 74, 969–978 (1993) https://doi.org/10.1063/1.354839

Abstract

View articletitled, Electromigration in Al(Cu) two‐level structures: Effect of Cu and kinetics of damage formation

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Determination of thermal parameters and the optical gap of poly(3‐butylthiophene) films by photopyroelectric spectroscopy

W. L. B. Melo; A. Pawlicka; R. Sanches; S. Mascarenhas; R. M. Faria

J. Appl. Phys. 74, 979–982 (1993) https://doi.org/10.1063/1.354840

Abstract

View articletitled, Determination of thermal parameters and the optical gap of poly(3‐butylthiophene) films by photopyroelectric spectroscopy

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Electromigration‐induced failure and reliability of metallizations in integrated circuits

I. F. Itskovich; R. S. Sorbello

J. Appl. Phys. 74, 983–987 (1993) https://doi.org/10.1063/1.354841

Abstract

View articletitled, Electromigration‐induced failure and reliability of metallizations in integrated circuits

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Stress, strain, and microstructure in thin tungsten films deposited by dc magnetron sputtering

T. J. Vink; W. Walrave; J. L. C. Daams; A. G. Dirks; M. A. J. Somers; K. J. A. van den Aker

J. Appl. Phys. 74, 988–995 (1993) https://doi.org/10.1063/1.354842

Abstract

View articletitled, Stress, strain, and microstructure in thin tungsten films deposited by dc magnetron sputtering

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X‐ray analysis of compositional modulation in Co/Pt multilayer films for magneto‐optic recording

J. A. Bain; B. M. Clemens; H. Notarys; E. E. Marinero; S. Brennan

J. Appl. Phys. 74, 996–1000 (1993) https://doi.org/10.1063/1.354843

Abstract

View articletitled, X‐ray analysis of compositional modulation in Co/Pt multilayer films for magneto‐optic recording

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Investigation of the oxidation kinetics of NiSi₂ on (111)Si by transmission electron microscopy

G. J. Huang; L. J. Chen

J. Appl. Phys. 74, 1001–1007 (1993) https://doi.org/10.1063/1.354945

Abstract

View articletitled, Investigation of the oxidation kinetics of NiSi2 on (111)Si by transmission electron microscopy

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Phase formation and microstructure changes in tantalum thin films induced by bias sputtering

Philippe Catania; Ronnen A. Roy; Jerome J. Cuomo

J. Appl. Phys. 74, 1008–1014 (1993) https://doi.org/10.1063/1.354946

Abstract

View articletitled, Phase formation and microstructure changes in tantalum thin films induced by bias sputtering

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Controlling strength and toughness of multilayer films: A new multiscalar approach

D. P. Adams; M. Vill; J. Tao; J. C. Bilello; S. M. Yalisove

J. Appl. Phys. 74, 1015–1021 (1993) https://doi.org/10.1063/1.354947

Abstract

View articletitled, Controlling strength and toughness of multilayer films: A new multiscalar approach

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Reaction kinetics on diamond: Measurement of H atom destruction rates

Stephen J. Harris; Anita M. Weiner

J. Appl. Phys. 74, 1022–1026 (1993) https://doi.org/10.1063/1.354948

Abstract

View articletitled, Reaction kinetics on diamond: Measurement of H atom destruction rates

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Preparation of biaxially aligned cubic zirconia films on pyrex glass substrates using ion‐beam assisted deposition

N. Sonnenberg; A. S. Longo; M. J. Cima; B. P. Chang; K. G. Ressler; P. C. McIntyre; Y. P. Liu

J. Appl. Phys. 74, 1027–1034 (1993) https://doi.org/10.1063/1.354949

Abstract

View articletitled, Preparation of biaxially aligned cubic zirconia films on pyrex glass substrates using ion‐beam assisted deposition

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Thermal stability of cobalt silicide thin films on Si(100)

Bin‐Shing Chen; Mao‐Chieh Chen

J. Appl. Phys. 74, 1035–1039 (1993) https://doi.org/10.1063/1.354950

Abstract

View articletitled, Thermal stability of cobalt silicide thin films on Si(100)

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Interface and growth‐mode characterization of Ce/Fe and CeH_≊2/Fe multilayers by x‐ray diffraction and Rutherford backscattering spectroscopy

F. Klose; M. Steins; T. Kacsich; W. Felsch

J. Appl. Phys. 74, 1040–1045 (1993) https://doi.org/10.1063/1.355332

Abstract

View articletitled, Interface and growth‐mode characterization of Ce/Fe and CeH≊2/Fe multilayers by x‐ray diffraction and Rutherford backscattering spectroscopy

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Characterization of ²⁸Si⁺ and ⁴⁰Ar⁺ ion‐implanted epitaxial ReSi₂ films on an n‐Si(100) substrate

Kun Ho Kim; Do Hee Kim; Sang Tack Nam; Joung Ju Lee; In Ho Kim; Sung Chul Kim; Jeong Yong Lee; Marc‐A. Nicolet; Gang Bai

J. Appl. Phys. 74, 1046–1050 (1993) https://doi.org/10.1063/1.354951

Abstract

View articletitled, Characterization of 28Si+ and 40Ar+ ion‐implanted epitaxial ReSi2 films on an n‐Si(100) substrate

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Investigation of DX centers in Al_xGa_1−xAs by space charge spectroscopy

J. Wöckinger; W. Jantsch; Z. Wilamowski; K. Köhler

J. Appl. Phys. 74, 1051–1056 (1993) https://doi.org/10.1063/1.354952

Abstract

View articletitled, Investigation of DX centers in AlxGa1−xAs by space charge spectroscopy

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Properties of the deep donor states of Al_xGa_1−xAs:Se

E. G. Oh; M. C. Hanna; Z. H. Lu; D. M. Szmyd; A. Majerfeld

J. Appl. Phys. 74, 1057–1071 (1993) https://doi.org/10.1063/1.354953

Abstract

View articletitled, Properties of the deep donor states of AlxGa1−xAs:Se

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Polar phonon‐intersubband plasmon coupling in Si delta‐doped GaAs

A. Mlayah; R. Carles; E. Bedel; A. Muñoz‐Yagüe

J. Appl. Phys. 74, 1072–1078 (1993) https://doi.org/10.1063/1.354954

Abstract

View articletitled, Polar phonon‐intersubband plasmon coupling in Si delta‐doped GaAs

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Conducting thin films of pentacene doped with alkaline metals

Takashi Minakata; Masaru Ozaki; Hideaki Imai

J. Appl. Phys. 74, 1079–1082 (1993) https://doi.org/10.1063/1.354955

Abstract

View articletitled, Conducting thin films of pentacene doped with alkaline metals

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Effect of polymer matrices on charge transport in molecularly doped polymers

A. Hirao; H. Nishizawa; M. Sugiuchi

J. Appl. Phys. 74, 1083–1085 (1993) https://doi.org/10.1063/1.354956

Abstract

View articletitled, Effect of polymer matrices on charge transport in molecularly doped polymers

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Particle‐ and photoinduced conductivity in type‐IIa diamonds

J. Appl. Phys. 74, 1086–1095 (1993) https://doi.org/10.1063/1.354957

Abstract

View articletitled, Particle‐ and photoinduced conductivity in type‐IIa diamonds

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Hall electron density and mobility in HgCdTe alloys with anomalous behavior of the Hall coefficient in weak magnetic field

S. B. Rafol; P. S. Wijewarnasuriya; S. Sivananthan; J. P. Faurie

J. Appl. Phys. 74, 1096–1099 (1993) https://doi.org/10.1063/1.354958

Abstract

View articletitled, Hall electron density and mobility in HgCdTe alloys with anomalous behavior of the Hall coefficient in weak magnetic field

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Theoretical calculation of impact ionization rate in SiO₂

H. Mizuno; M. Morifuji; K. Taniguchi; C. Hamaguchi

J. Appl. Phys. 74, 1100–1105 (1993) https://doi.org/10.1063/1.354959

Abstract

View articletitled, Theoretical calculation of impact ionization rate in SiO2

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Photodoping dynamics in the Ag/As‐S system

Keiji Tanaka; Hiroaki Sanjoh

J. Appl. Phys. 74, 1106–1110 (1993) https://doi.org/10.1063/1.354960

Abstract

View articletitled, Photodoping dynamics in the Ag/As‐S system

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Photoconductive properties of a dye dispersed (oligo phenylene sulfide)‐polyimide

Akio Takimoto; Hirofumi Wakemoto; Hisahito Ogawa

J. Appl. Phys. 74, 1111–1117 (1993) https://doi.org/10.1063/1.354961

Abstract

View articletitled, Photoconductive properties of a dye dispersed (oligo phenylene sulfide)‐polyimide

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Minority carrier diffusion length and edge surface‐recombination velocity in InP

Roshanak Hakimzadeh; Sheila G. Bailey

J. Appl. Phys. 74, 1118–1123 (1993) https://doi.org/10.1063/1.354936

Abstract

View articletitled, Minority carrier diffusion length and edge surface‐recombination velocity in InP

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Study of defects induced by high‐electric‐field stress into a thin gate oxide (11 nm) of metal‐oxide‐semiconductor capacitors

Abdelillah El‐Hdiy; Guy Salace; Christian Petit; Marc Jourdain; Dominique Vuillaume

J. Appl. Phys. 74, 1124–1130 (1993) https://doi.org/10.1063/1.354937

Abstract

View articletitled, Study of defects induced by high‐electric‐field stress into a thin gate oxide (11 nm) of metal‐oxide‐semiconductor capacitors

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Maxwell displacement current across monolayer polyimide Langmuir–Blodgett films with azobenzene by photoirradiation

Mitsumasa Iwamoto; Yuichiro Kanai; Haruhiko Naruse

J. Appl. Phys. 74, 1131–1137 (1993) https://doi.org/10.1063/1.354938

Abstract

View articletitled, Maxwell displacement current across monolayer polyimide Langmuir–Blodgett films with azobenzene by photoirradiation

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Photoelectric study of β‐FeSi₂ on silicon: Optical threshold as a function of temperature

K. Lefki; P. Muret

J. Appl. Phys. 74, 1138–1142 (1993) https://doi.org/10.1063/1.354939

Abstract

View articletitled, Photoelectric study of β‐FeSi2 on silicon: Optical threshold as a function of temperature

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Thermally activated real‐space‐transfer noise in pseudomorphic high‐electron‐mobility transistors

A. van Die; J. I. Dijkhuis

J. Appl. Phys. 74, 1143–1150 (1993) https://doi.org/10.1063/1.354914

Abstract

View articletitled, Thermally activated real‐space‐transfer noise in pseudomorphic high‐electron‐mobility transistors

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Magnetotransport in type‐III Hg_1−xZn_xTe‐CdTe superlattices

S. B. Rafol; X. Chu; J. P. Faurie

J. Appl. Phys. 74, 1151–1160 (1993) https://doi.org/10.1063/1.354915

Abstract

View articletitled, Magnetotransport in type‐III Hg1−xZnxTe‐CdTe superlattices

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Electron distribution in pseudomorphic Al_0.30Ga_0.70As/ In_0.15Ga_0.85As/GaAs δ‐doped heterostructures

J. M. Fernández; M. E. Lazzouni; L. J. Sham; H. H. Wieder

J. Appl. Phys. 74, 1161–1168 (1993) https://doi.org/10.1063/1.354916

Abstract

View articletitled, Electron distribution in pseudomorphic Al0.30Ga0.70As/ In0.15Ga0.85As/GaAs δ‐doped heterostructures

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Local investigation of recombination at grain boundaries in silicon by grain boundary‐electron beam induced current

J. Palm

J. Appl. Phys. 74, 1169–1178 (1993) https://doi.org/10.1063/1.354917

Abstract

View articletitled, Local investigation of recombination at grain boundaries in silicon by grain boundary‐electron beam induced current

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Evaluation of ohmic contacts formed by B⁺ implantation and Ti‐Au metallization on diamond

V. Venkatesan; D. M. Malta; K. Das; A. M. Belu

J. Appl. Phys. 74, 1179–1187 (1993) https://doi.org/10.1063/1.354918

Abstract

View articletitled, Evaluation of ohmic contacts formed by B+ implantation and Ti‐Au metallization on diamond

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Photoluminescence study of undoped‐like GaAs/AlGaAs quantum wells in high electric fields

Naoteru Shigekawa; Tomofumi Furuta; Kunihiro Arai; Masaaki Tomizawa

J. Appl. Phys. 74, 1188–1194 (1993) https://doi.org/10.1063/1.354919

Abstract

View articletitled, Photoluminescence study of undoped‐like GaAs/AlGaAs quantum wells in high electric fields

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Enhancement of intersubband Stark effects in L‐valley step quantum wells for infrared modulation and voltage tunable detection

H. Xie; W. I. Wang; J. R. Meyer; C. A. Hoffman; F. J. Bartoli

J. Appl. Phys. 74, 1195–1198 (1993) https://doi.org/10.1063/1.354920

Abstract

View articletitled, Enhancement of intersubband Stark effects in L‐valley step quantum wells for infrared modulation and voltage tunable detection

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Self‐consistent simulation of quantum wires in periodic heterojunction structures

Thomas Kerkhoven; Michael W. Raschke; Umberto Ravaioli

J. Appl. Phys. 74, 1199–1204 (1993) https://doi.org/10.1063/1.354921

Abstract

View articletitled, Self‐consistent simulation of quantum wires in periodic heterojunction structures

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Study of ion activation in the in situ low‐temperature laser deposition of superconducting YBa₂Cu₃O_7−δ films

P. Mukherjee; P. Sakthivel; K. Ahmed; S. Witanachchi

J. Appl. Phys. 74, 1205–1208 (1993) https://doi.org/10.1063/1.354922

Abstract

View articletitled, Study of ion activation in the in situ low‐temperature laser deposition of superconducting YBa2Cu3O7−δ films

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Preferential axis control of YBa₂Cu₃O_x thin film by quasilattice‐match engineering

Masashi Mukaida; Shintaro Miyazawa

J. Appl. Phys. 74, 1209–1212 (1993) https://doi.org/10.1063/1.354923

Abstract

View articletitled, Preferential axis control of YBa2Cu3Ox thin film by quasilattice‐match engineering

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Spherical center for nucleation by curling in a bulk ferromagnet

Amikam Aharoni; W. Baltensperger

J. Appl. Phys. 74, 1213–1217 (1993) https://doi.org/10.1063/1.355299

Abstract

View articletitled, Spherical center for nucleation by curling in a bulk ferromagnet

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Subsidiary absorption spin wave instability processes in yttrium iron garnet thin films, critical modes, and the ‘‘kink’’ effect

G. Wiese; P. Kabos; C. E. Patton

J. Appl. Phys. 74, 1218–1228 (1993) https://doi.org/10.1063/1.354924

Abstract

View articletitled, Subsidiary absorption spin wave instability processes in yttrium iron garnet thin films, critical modes, and the ‘‘kink’’ effect

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Anisotropy, wall energy density, and exchange stiffness of amorphous (Gd,Dy)‐(Fe,Co) films

D. Raasch; J. Reck

J. Appl. Phys. 74, 1229–1232 (1993) https://doi.org/10.1063/1.354925

Abstract

View articletitled, Anisotropy, wall energy density, and exchange stiffness of amorphous (Gd,Dy)‐(Fe,Co) films

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Magnetic properties of sputtered Fe thin films: Processing and thickness dependence

Y. K. Kim; M. Oliveria

J. Appl. Phys. 74, 1233–1241 (1993) https://doi.org/10.1063/1.354926

Abstract

View articletitled, Magnetic properties of sputtered Fe thin films: Processing and thickness dependence

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Epitaxial yttrium iron garnet films grown by pulsed laser deposition

P. C. Dorsey; S. E. Bushnell; R. G. Seed; C. Vittoria

J. Appl. Phys. 74, 1242–1246 (1993) https://doi.org/10.1063/1.354927

Abstract

View articletitled, Epitaxial yttrium iron garnet films grown by pulsed laser deposition

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Influence of Cu²⁺ ion on magnetic moment and Curie temperature of Zn₂‐X hexaferrites

B. X. Gu

J. Appl. Phys. 74, 1247–1249 (1993) https://doi.org/10.1063/1.355331

Abstract

View articletitled, Influence of Cu2+ ion on magnetic moment and Curie temperature of Zn2‐X hexaferrites

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Dielectric polarization relaxation measurement in α‐SiO₂ by means of a scanning electron microscope technique

K. H. Oh; C. Le Gressus; H. Gong; C. K. Ong; B. T. G. Tan; X. Z. Ding

J. Appl. Phys. 74, 1250–1255 (1993) https://doi.org/10.1063/1.354928

Abstract

View articletitled, Dielectric polarization relaxation measurement in α‐SiO2 by means of a scanning electron microscope technique

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Effects of ferroelectric switching on the dielectric and ferroelectric properties in lead zirconate titanate ceramics and their modeling

Wuyi Pan; Shan Sun; Paul Fuierer

J. Appl. Phys. 74, 1256–1264 (1993) https://doi.org/10.1063/1.354929

Abstract

View articletitled, Effects of ferroelectric switching on the dielectric and ferroelectric properties in lead zirconate titanate ceramics and their modeling

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Analysis of the electroluminescence observed during the anodic oxidation of porous layers formed on lightly p‐doped silicon

M. Ligeon; F. Muller; R. Herino; F. Gaspard; J. C. Vial; R. Romestain; S. Billat; A. Bsiesy

J. Appl. Phys. 74, 1265–1271 (1993) https://doi.org/10.1063/1.354930

Abstract

View articletitled, Analysis of the electroluminescence observed during the anodic oxidation of porous layers formed on lightly p‐doped silicon

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High‐efficiency infrared‐to‐visible upconversion of Er³⁺ in BaCl₂

Yuhu Wang; Junichi Ohwaki

J. Appl. Phys. 74, 1272–1278 (1993) https://doi.org/10.1063/1.354931

Abstract

View articletitled, High‐efficiency infrared‐to‐visible upconversion of Er3+ in BaCl2

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Effect of hydrogenation on the luminescence of strained Si_1−xGe_x alloy layers grown by molecular beam epitaxy

J. M. G. Tijero; V. Arbet‐Engels; A. Manissadjian; K. L. Wang; V. Higgs

J. Appl. Phys. 74, 1279–1282 (1993) https://doi.org/10.1063/1.354932

Abstract

View articletitled, Effect of hydrogenation on the luminescence of strained Si1−xGex alloy layers grown by molecular beam epitaxy

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Optical properties of conjugated polymer superlattices prepared by potential‐programmed electropolymerization

Mamoru Fujitsuka; Reiko Nakahara; Tomokazu Iyoda; Takeo Shimidzu; Hajime Tsuchiya

J. Appl. Phys. 74, 1283–1286 (1993) https://doi.org/10.1063/1.354933

Abstract

View articletitled, Optical properties of conjugated polymer superlattices prepared by potential‐programmed electropolymerization

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Materials constants of KNbO₃ relevant for electro‐ and acousto‐optics

M. Zgonik; R. Schlesser; I. Biaggio; E. Voit; J. Tscherry; P. Günter

J. Appl. Phys. 74, 1287–1297 (1993) https://doi.org/10.1063/1.354934

Abstract

View articletitled, Materials constants of KNbO3 relevant for electro‐ and acousto‐optics

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Evidence of donor center involvement in ac thin film electroluminescent devices exhibiting memory

I. P. McClean; C. B. Thomas

J. Appl. Phys. 74, 1298–1302 (1993) https://doi.org/10.1063/1.354935

Abstract

View articletitled, Evidence of donor center involvement in ac thin film electroluminescent devices exhibiting memory

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Chemical sputtering of Si related to roughness formation of a Cl‐passivated Si surface

H. Feil; J. Dieleman; B. J. Garrison

J. Appl. Phys. 74, 1303–1309 (1993) https://doi.org/10.1063/1.354909

Abstract

View articletitled, Chemical sputtering of Si related to roughness formation of a Cl‐passivated Si surface

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Finite element analysis of thermal residual stresses at graded ceramic‐metal interfaces. Part I. Model description and geometrical effects

R. L. Williamson; B. H. Rabin; J. T. Drake

J. Appl. Phys. 74, 1310–1320 (1993) https://doi.org/10.1063/1.354910

Abstract

View articletitled, Finite element analysis of thermal residual stresses at graded ceramic‐metal interfaces. Part I. Model description and geometrical effects

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Finite element analysis of thermal residual stresses at graded ceramic‐metal interfaces. Part II. Interface optimization for residual stress reduction

J. T. Drake; R. L. Williamson; B. H. Rabin

J. Appl. Phys. 74, 1321–1326 (1993) https://doi.org/10.1063/1.354911

Abstract

View articletitled, Finite element analysis of thermal residual stresses at graded ceramic‐metal interfaces. Part II. Interface optimization for residual stress reduction

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Lateral diffusion of sources during selective growth of Si‐doped GaAs layers by metalorganic vapor phase epitaxy

Naoki Hara; Kazushige Shiina; Tatsuya Ohori; Kazumi Kasai; Junji Komeno

J. Appl. Phys. 74, 1327–1330 (1993) https://doi.org/10.1063/1.354912

Abstract

View articletitled, Lateral diffusion of sources during selective growth of Si‐doped GaAs layers by metalorganic vapor phase epitaxy

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Annealing of boron‐implanted corrosion resistant copper films

P. J. Ding; W. A. Lanford; S. Hymes; S. P. Murarka

J. Appl. Phys. 74, 1331–1334 (1993) https://doi.org/10.1063/1.354913

Abstract

View articletitled, Annealing of boron‐implanted corrosion resistant copper films

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Determination of zinc cluster size in ionized cluster beam film deposition

Frank K. Urban, III; Susan W. Feng; Josekutty J. Nainaparampil

J. Appl. Phys. 74, 1335–1338 (1993) https://doi.org/10.1063/1.354888

Abstract

View articletitled, Determination of zinc cluster size in ionized cluster beam film deposition

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Experimental study and computer simulation of collimated sputtering of titanium thin films over topographical features

D. Liu; S. K. Dew; M. J. Brett; T. Janacek; T. Smy; W. Tsai

J. Appl. Phys. 74, 1339–1344 (1993) https://doi.org/10.1063/1.354889

Abstract

View articletitled, Experimental study and computer simulation of collimated sputtering of titanium thin films over topographical features

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Damage‐free selective etching of Si native oxides using NH₃/NF₃ and SF₆/H₂O down‐flow etching

H. Nishino; N. Hayasaka; H. Okano

J. Appl. Phys. 74, 1345–1348 (1993) https://doi.org/10.1063/1.354890

Abstract

View articletitled, Damage‐free selective etching of Si native oxides using NH3/NF3 and SF6/H2O down‐flow etching

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Smoothing of the Si surface using CF₄/O₂ down‐flow etching

H. Nishino; N. Hayasaka; K. Horioka; J. Shiozawa; S. Nadahara; N. Shooda; Y. Akama; A. Sakai; H. Okano

J. Appl. Phys. 74, 1349–1353 (1993) https://doi.org/10.1063/1.354891

Abstract

View articletitled, Smoothing of the Si surface using CF4/O2 down‐flow etching

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Influence of the ion energy on the growth and structure of thin hydrocarbon films

P. Reinke; W. Jacob; W. Möller

J. Appl. Phys. 74, 1354–1361 (1993) https://doi.org/10.1063/1.354892

Abstract

View articletitled, Influence of the ion energy on the growth and structure of thin hydrocarbon films

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Amorphization of transition metal‐Si alloy powders by mechanical alloying

Pee‐Yew Lee; Chung‐Kwei Lin; Hong‐Ming Lin

J. Appl. Phys. 74, 1362–1365 (1993) https://doi.org/10.1063/1.354893

Abstract

View articletitled, Amorphization of transition metal‐Si alloy powders by mechanical alloying

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Epitaxial growth of oxides on semiconductors using fluorides as a buffer layer

L. S. Hung; G. M. Mason; G. R. Paz‐Pujalt; J. A. Agostinelli; J. M. Mir; S. T. Lee; T. N. Blanton; G. Ding

J. Appl. Phys. 74, 1366–1375 (1993) https://doi.org/10.1063/1.354894

Abstract

View articletitled, Epitaxial growth of oxides on semiconductors using fluorides as a buffer layer

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Study of CuGa(Se,Te)₂ bulk materials and thin films

G. Massé; K. Djessas; L. Yarzhou

J. Appl. Phys. 74, 1376–1381 (1993) https://doi.org/10.1063/1.354895

Abstract

View articletitled, Study of CuGa(Se,Te)2 bulk materials and thin films

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A normal‐incidence type‐II quantum‐well infrared photodetector using an indirect AlAs/Al_0.5Ga_0.5As system grown on (110) GaAs for mid‐ and long‐wavelength multicolor detection

Y. H. Wang; Sheng S. Li; Pin Ho; M. O. Manasreh

J. Appl. Phys. 74, 1382–1387 (1993) https://doi.org/10.1063/1.354896

Abstract

View articletitled, A normal‐incidence type‐II quantum‐well infrared photodetector using an indirect AlAs/Al0.5Ga0.5As system grown on (110) GaAs for mid‐ and long‐wavelength multicolor detection

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Modeling of self‐electro‐optic‐effect devices

P. J. Mares; S. L. Chuang

J. Appl. Phys. 74, 1388–1397 (1993) https://doi.org/10.1063/1.354897

Abstract

View articletitled, Modeling of self‐electro‐optic‐effect devices

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The study of emitter thickness effect on the heterostructure emitter bipolar transistors

H. R. Chen; C. P. Lee; C. Y. Chang; J. S. Tsang; K. L. Tsai

J. Appl. Phys. 74, 1398–1402 (1993) https://doi.org/10.1063/1.354898

Abstract

View articletitled, The study of emitter thickness effect on the heterostructure emitter bipolar transistors

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Resonance effects in Josephson tunnel junctions with integrated tuning structures

T. Lehnert; F. Schäfer; K. H. Gundlach

J. Appl. Phys. 74, 1403–1409 (1993) https://doi.org/10.1063/1.355298

Abstract

View articletitled, Resonance effects in Josephson tunnel junctions with integrated tuning structures

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An investigation of anomalous current‐voltage characteristics in silicon‐on‐insulator metal‐oxide‐semiconductor transistors

Patrick S. Liu; George T. Liu

J. Appl. Phys. 74, 1410–1416 (1993) https://doi.org/10.1063/1.354899

Abstract

View articletitled, An investigation of anomalous current‐voltage characteristics in silicon‐on‐insulator metal‐oxide‐semiconductor transistors

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Intersubband stimulated emission and optical gain by ‘‘phonon pumping’’ in quantum wires

J. P. Leburton

J. Appl. Phys. 74, 1417–1420 (1993) https://doi.org/10.1063/1.354900

Abstract

View articletitled, Intersubband stimulated emission and optical gain by ‘‘phonon pumping’’ in quantum wires

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Performance of the multiquantum well infrared photodetector

Jian‐Ping Peng; Yao‐Ming Mu; Xue‐Chu Shen

J. Appl. Phys. 74, 1421–1425 (1993) https://doi.org/10.1063/1.354901

Abstract

View articletitled, Performance of the multiquantum well infrared photodetector

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Critical current density and resistivity measurements for long patterned lines in Tl₂Ba₂CaCu₂O₈ thin films

W. L. Holstein; C. Wilker; D. B. Laubacher; D. W. Face; P. Pang; M. S. Warrington; C. F. Carter; L. A. Parisi

J. Appl. Phys. 74, 1426–1430 (1993) https://doi.org/10.1063/1.354902

Abstract

View articletitled, Critical current density and resistivity measurements for long patterned lines in Tl2Ba2CaCu2O8 thin films

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Electron traps in InGaP grown by gas source molecular beam epitaxy

H. S. Kim; M. J. Hafich; G. A. Patrizi; A. Nanda; T. J. Vogt; L. M. Woods; G. Y. Robinson

J. Appl. Phys. 74, 1431–1433 (1993) https://doi.org/10.1063/1.355330

Abstract

View articletitled, Electron traps in InGaP grown by gas source molecular beam epitaxy

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Directionality in photoluminescence from λ/2 periodic quantum wells

M. Y. A. Raja; Y. Aktas

J. Appl. Phys. 74, 1434–1436 (1993) https://doi.org/10.1063/1.354903

Abstract

View articletitled, Directionality in photoluminescence from λ/2 periodic quantum wells

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Photoreflectance studies of lattice‐matched and strained InGaAs/InAlAs single quantum wells

S. Monéger; Y. Baltagi; T. Benyattou; A. Tabata; B. Ragot; G. Guillot; A. Georgakilas; K. Zekentes; G. Halkias

J. Appl. Phys. 74, 1437–1439 (1993) https://doi.org/10.1063/1.354904

Abstract

View articletitled, Photoreflectance studies of lattice‐matched and strained InGaAs/InAlAs single quantum wells

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Re‐emission of iron originally gettered by oxygen precipitates in a silicon wafer

Masaki Aoki; Akito Hara

J. Appl. Phys. 74, 1440–1441 (1993) https://doi.org/10.1063/1.354905

Abstract

View articletitled, Re‐emission of iron originally gettered by oxygen precipitates in a silicon wafer

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Dynamics of laser‐induced periodic surface structures in excimer laser ablation of polymers

P. E. Dyer; R. J. Farley

J. Appl. Phys. 74, 1442–1444 (1993) https://doi.org/10.1063/1.354906

Abstract

View articletitled, Dynamics of laser‐induced periodic surface structures in excimer laser ablation of polymers

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Laser‐stimulable transparent KCl:Eu crystals for erasable and rewritable optical memory utilizing photostimulated luminescence

Hidehito Nanto; Kazuhiko Murayama; Takayuki Usuda; Fumitaka Endo; Yoshiaki Hirai; Shin‐ichi Taniguchi; Nozomu Takeuchi

J. Appl. Phys. 74, 1445–1447 (1993) https://doi.org/10.1063/1.354907

Abstract

View articletitled, Laser‐stimulable transparent KCl:Eu crystals for erasable and rewritable optical memory utilizing photostimulated luminescence

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Microwave properties of high‐T_c Y₁Ba₂Cu₃O_y superconducting bridges on Y₂BaCuO₅ substrates

Kiejin Lee; Gwangseo Park; L. E. Amatuni; K. Y. Constantinian

J. Appl. Phys. 74, 1448–1450 (1993) https://doi.org/10.1063/1.354908

Abstract

View articletitled, Microwave properties of high‐Tc Y1Ba2Cu3Oy superconducting bridges on Y2BaCuO5 substrates

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Band‐band impact ionization and solar cell efficiency

P. T. Landsberg; H. Nussbaumer; G. Willeke

J. Appl. Phys. 74, 1451–1452 (1993) https://doi.org/10.1063/1.354886

Abstract

View articletitled, Band‐band impact ionization and solar cell efficiency

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Excitation of optical transitions in the In_xGa_1−xAs‐GaAs quantum well system by the free exciton in the barrier

D. C. Reynolds; B. Jogai; P. W. Yu; C. E. Stutz

J. Appl. Phys. 74, 1453–1455 (1993) https://doi.org/10.1063/1.354887

Abstract

View articletitled, Excitation of optical transitions in the InxGa1−xAs‐GaAs quantum well system by the free exciton in the barrier

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Thermally stable ternary titanium‐tantalum silicide formation on polycrystalline silicon

J. S. Choi; S. H. Paek; Y. S. Hwang; S. G. Kang; H. C. Cho; J. E. Oh; T. E. Shim; S. I. Lee; J. K. Lee; J. G. Lee

J. Appl. Phys. 74, 1456–1458 (1993) https://doi.org/10.1063/1.354861

Abstract

View articletitled, Thermally stable ternary titanium‐tantalum silicide formation on polycrystalline silicon

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Preparation of Bi₂Sr₂CaCu₂O_y films on alumina substrates with a CuAl₂O₄ buffer layer

Kiejin Lee; Insang Song; Gwangseo Park

J. Appl. Phys. 74, 1459–1461 (1993) https://doi.org/10.1063/1.354862

Abstract

View articletitled, Preparation of Bi2Sr2CaCu2Oy films on alumina substrates with a CuAl2O4 buffer layer

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Comment on ‘‘A theory on the x‐ray sensitivity of a silicon surface‐barrier detector including a thermal charge‐diffusion effect’’ [J. Appl. Phys. 72, 3363 (1992)]

C. Donolato

J. Appl. Phys. 74, 1462 (1993) https://doi.org/10.1063/1.354863

Abstract

View articletitled, Comment on ‘‘A theory on the x‐ray sensitivity of a silicon surface‐barrier detector including a thermal charge‐diffusion effect’’ [J. Appl. Phys. 72, 3363 (1992)]

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Reply to ‘‘Comment on ‘A theory on the x‐ray sensitivity of a silicon surface‐barrier detector including a thermal charge‐diffusion effect’ ’’ [J. Appl. Phys. 72, 3363 (1992)]

T. Cho; M. Hirata; E. Takahashi; T. Teraji; J. Kohagura; N. Yamaguchi; K. Matsuda; A. Takeuchi; K. Ogura; T. Kondoh; A. Osawa; K. Yatsu; T. Tamano; S. Miyoshi

J. Appl. Phys. 74, 1463–1464 (1993) https://doi.org/10.1063/1.354864

Abstract

View articletitled, Reply to ‘‘Comment on ‘A theory on the x‐ray sensitivity of a silicon surface‐barrier detector including a thermal charge‐diffusion effect’ ’’ [J. Appl. Phys. 72, 3363 (1992)]

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