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Aberration calculation for combined magnetic focusing deflection systems with curved axes
J. Appl. Phys. 73, 1570–1575 (1993)
https://doi.org/10.1063/1.353237
The linear and nonlinear optical properties of the organic nonlinear material 4‐nitro‐4′‐methylbenzylidene aniline
J. Appl. Phys. 73, 1591–1597 (1993)
https://doi.org/10.1063/1.353217
Theoretical modeling of chemical generators producing O2(1Δ) at high pressure for chemically pumped iodine lasers
J. Appl. Phys. 73, 1598–1611 (1993)
https://doi.org/10.1063/1.353218
Measurements of electron energy distribution function in an asymmetric radio‐frequency discharge plasma
J. Appl. Phys. 73, 1612–1616 (1993)
https://doi.org/10.1063/1.353193
Electrostatic forces on small particles in low‐pressure discharges
J. Appl. Phys. 73, 1617–1620 (1993)
https://doi.org/10.1063/1.353194
Optical ion energy measurements in a radio‐frequency‐induction plasma source
J. Appl. Phys. 73, 1621–1626 (1993)
https://doi.org/10.1063/1.353195
Transient current interruption mechanism in a magnetically delayed vacuum switch
J. Appl. Phys. 73, 1627–1633 (1993)
https://doi.org/10.1063/1.353196
Monte Carlo simulations of electron distributions in the sheath region of reactive‐ion‐etching plasmas
J. Appl. Phys. 73, 1634–1643 (1993)
https://doi.org/10.1063/1.353197
Precursor to paramagnetic centers induced in gamma‐irradiated doped silica glasses
J. Appl. Phys. 73, 1644–1649 (1993)
https://doi.org/10.1063/1.353198
A crystallographic methodology for modeling dislocation dynamics in GaAs crystals grown from melt
J. Appl. Phys. 73, 1650–1656 (1993)
https://doi.org/10.1063/1.353199
Ion irradiation damage in Er‐doped silica probed by the Er3+ luminescence lifetime at 1.535 μm
J. Appl. Phys. 73, 1669–1674 (1993)
https://doi.org/10.1063/1.353201
Defect reactions by heat treatment of heavily silicon doped gallium arsenide
J. Appl. Phys. 73, 1675–1680 (1993)
https://doi.org/10.1063/1.353202
The effects of ion implantation on the interdiffusion coefficients in InxGa1−xAs/GaAs quantum well structures
J. Appl. Phys. 73, 1686–1692 (1993)
https://doi.org/10.1063/1.353204
Phase evolution upon ion mixing and solid‐state reaction and thermodynamic interpretation in the Ni‐Nb system
J. Appl. Phys. 73, 1702–1710 (1993)
https://doi.org/10.1063/1.353205
Hydrogen diffusion and acceptor passivation in p‐type GaAs
J. Appl. Phys. 73, 1723–1731 (1993)
https://doi.org/10.1063/1.353207
Ellipsometry study on refractive index profiles of the SiO2/Si3N4/SiO2/Si structure
J. Appl. Phys. 73, 1732–1736 (1993)
https://doi.org/10.1063/1.353208
Effects of anneal ambients and Pt thickness on Pt/Ti and Pt/Ti/TiN interfacial reactions
J. Appl. Phys. 73, 1764–1772 (1993)
https://doi.org/10.1063/1.353212
Growth of a Cr oxide layer on GaAs(100) by oxidation with condensed water
J. Appl. Phys. 73, 1781–1787 (1993)
https://doi.org/10.1063/1.353214
Deep‐level transient charge spectroscopy of Sn donors in AlxGa1−xAs
B. M. Arora; S. Chakravarty; S. Subramanian; V. I. Polyakov; M. G. Ermakov; O. N. Ermakova; P. I. Perov
J. Appl. Phys. 73, 1802–1806 (1993)
https://doi.org/10.1063/1.353189
Avalanche injection model for the lock‐on effect in III‐V power photoconductive switches
J. Appl. Phys. 73, 1807–1812 (1993)
https://doi.org/10.1063/1.353190
Low and high electric field transport in CdIn2Te4
J. Appl. Phys. 73, 1813–1818 (1993)
https://doi.org/10.1063/1.353191
Two‐dimensional electrical transport of pentacene thin films doped with iodine
J. Appl. Phys. 73, 1819–1825 (1993)
https://doi.org/10.1063/1.353192
Annealing kinetics of a‐Si:H deposited by concentric‐electrode rf glow discharge at room temperature
J. Appl. Phys. 73, 1826–1831 (1993)
https://doi.org/10.1063/1.353167
Effect of mechanical stress on current‐voltage characteristics of thin film polycrystalline diamond Schottky diodes
J. Appl. Phys. 73, 1832–1837 (1993)
https://doi.org/10.1063/1.353168
Nonlinear piezoresistance effects in silicon
J. Appl. Phys. 73, 1838–1847 (1993)
https://doi.org/10.1063/1.353169
Evanescent channels in calculation of phonon‐assisted tunneling spectrum of a semiconductor tunneling structure
J. Appl. Phys. 73, 1848–1852 (1993)
https://doi.org/10.1063/1.353170
Microwave properties of YBa2Cu3O7−x thin films studied with coplanar transmission line resonators
J. Appl. Phys. 73, 1866–1872 (1993)
https://doi.org/10.1063/1.353173
ac low‐frequency magnetic measurement of the proximity effect between fine filaments of superconducting NbTi wires
J. Appl. Phys. 73, 1873–1881 (1993)
https://doi.org/10.1063/1.353174
Specific heat measurements of pressure‐induced reentrant superconductivity in Eu0.9Ho0.1Mo6S8
J. Appl. Phys. 73, 1886–1891 (1993)
https://doi.org/10.1063/1.353176
Structural and magnetic properties of rare earth iron nitride series R2(Fe1−xCox)17N3−δ
J. Appl. Phys. 73, 1892–1896 (1993)
https://doi.org/10.1063/1.353177
Dielectric constant of two‐component, two‐dimensional mixtures in terms of Bergman–Milton simple poles
J. Appl. Phys. 73, 1897–1903 (1993)
https://doi.org/10.1063/1.353178
Electric‐field effect on intersubband optical absorption in a Si/Si1−xGex superlattice
J. Appl. Phys. 73, 1918–1923 (1993)
https://doi.org/10.1063/1.353181
An oligosilane bridge model for the origin of the intense visible photoluminescence of porous silicon
J. Appl. Phys. 73, 1924–1928 (1993)
https://doi.org/10.1063/1.353182
Energy levels and upconversion fluorescence in trivalent thulium‐doped yttrium scandium aluminum garnet
J. Appl. Phys. 73, 1929–1935 (1993)
https://doi.org/10.1063/1.354080
Phase formation and martensitic transformation in mechanically alloyed nanocrystalline Fe—Ni
J. Appl. Phys. 73, 1975–1980 (1993)
https://doi.org/10.1063/1.353162
Nucleation and deposition of W on GaAs by excimer laser‐assisted chemical vapor deposition
J. Appl. Phys. 73, 1981–1988 (1993)
https://doi.org/10.1063/1.353163
Voltage dependence of electron dynamics in high‐power extended planar‐anode diodes
J. Appl. Phys. 73, 2004–2014 (1993)
https://doi.org/10.1063/1.353166
Radiation detection from phase‐locked serial dc SQUID arrays
J. Appl. Phys. 73, 2019–2023 (1993)
https://doi.org/10.1063/1.353143
Optical emission spectroscopy of ArF‐laser‐irradiated disilane‐acetylene mixtures for 3C‐SiC epitaxial growth
J. Appl. Phys. 73, 2024–2026 (1993)
https://doi.org/10.1063/1.353144
Thin YBa2Cu3O7−δ films by electron‐beam coevaporation— Growth and in situ characterization
J. Appl. Phys. 73, 2032–2034 (1993)
https://doi.org/10.1063/1.353147
GaAs surface reconstruction obtained using a dry process
Kent D. Choquette; M. Hong; H. S. Luftman; S. N. G. Chu; J. P. Mannaerts; R. C. Wetzel; R. S. Freund
J. Appl. Phys. 73, 2035–2037 (1993)
https://doi.org/10.1063/1.353148
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.