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Estimation of the reliability of 0.98 μm InGaAs/GaAs strained quantum well lasers
J. Appl. Phys. 72, 2119–2124 (1992)
https://doi.org/10.1063/1.351599
High‐power single‐mode AlGaAs lasers with bent‐waveguide nonabsorbing etched mirrors
J. Appl. Phys. 72, 2131–2135 (1992)
https://doi.org/10.1063/1.351601
Faraday rotation of spontaneous magnetization in a laser‐produced plasma from solid target
J. Appl. Phys. 72, 2144–2148 (1992)
https://doi.org/10.1063/1.351602
Crystal structure and electron microprobe analyses of a lanthanum lutetium gallium garnet
J. Appl. Phys. 72, 2152–2155 (1992)
https://doi.org/10.1063/1.351604
Interaction of a dislocation with an elliptic hole or rigid inclusion in an anisotropic material
J. Appl. Phys. 72, 2156–2163 (1992)
https://doi.org/10.1063/1.351605
MeV B compensation implants into n‐type GaAs and InP
J. Appl. Phys. 72, 2179–2184 (1992)
https://doi.org/10.1063/1.351608
Temperature dependence of elastic nonlinearities in single‐crystal gallium arsenide
J. Appl. Phys. 72, 2202–2208 (1992)
https://doi.org/10.1063/1.351612
The effect of superdislocation on fracture: Dislocation‐free zone in the front of a semi‐infinite crack tip
J. Appl. Phys. 72, 2209–2214 (1992)
https://doi.org/10.1063/1.351613
Electromigration‐induced drift failure of via contacts in multilevel metallization
J. Appl. Phys. 72, 2227–2231 (1992)
https://doi.org/10.1063/1.351615
Marker and radioactive silicon tracer studies of PtSi formation
J. Appl. Phys. 72, 2232–2241 (1992)
https://doi.org/10.1063/1.351616
Structural and electrical characteristics of Ge and Se implanted InP after rapid thermal annealing
J. Appl. Phys. 72, 2249–2255 (1992)
https://doi.org/10.1063/1.351618
Electronic properties of the hydrogen‐carbon complex in crystalline silicon
J. Appl. Phys. 72, 2264–2271 (1992)
https://doi.org/10.1063/1.351620
An effective‐mass model of hydrogenated amorphous silicon: A tail state analysis
J. Appl. Phys. 72, 2272–2281 (1992)
https://doi.org/10.1063/1.351568
Effects of interface phonon scattering in multiheterointerface structures
J. Appl. Phys. 72, 2282–2287 (1992)
https://doi.org/10.1063/1.351569
Effect of near‐contact regions on the interpretation of ohmic behavior in trap‐dominated relaxation semiconductors
J. Appl. Phys. 72, 2294–2298 (1992)
https://doi.org/10.1063/1.351571
Effects of defect scattering on guided electron waves in two coupled quantum wires
J. Appl. Phys. 72, 2299–2311 (1992)
https://doi.org/10.1063/1.351572
Analysis of the transient spectral density of velocity fluctuations in GaAs and InP
J. Appl. Phys. 72, 2322–2330 (1992)
https://doi.org/10.1063/1.351574
C‐V and I‐V characteristics of quantum well varactors
J. Appl. Phys. 72, 2340–2346 (1992)
https://doi.org/10.1063/1.352322
Theory of localized phonon modes and their effects on electron tunneling in double‐barrier structures
J. Appl. Phys. 72, 2356–2366 (1992)
https://doi.org/10.1063/1.351577
Photoreflectance study of hole‐subband structures in GaAs/InxAl1−xAs strained‐layer superlattices
J. Appl. Phys. 72, 2372–2376 (1992)
https://doi.org/10.1063/1.351579
Electron‐transport mechanisms in metal Schottky barrier contacts to hydrogenated amorphous silicon
J. Appl. Phys. 72, 2377–2384 (1992)
https://doi.org/10.1063/1.351580
Low‐field diamagnetic response of hollow cylindrical samples of sintered high‐Tc superconductors
J. Appl. Phys. 72, 2390–2395 (1992)
https://doi.org/10.1063/1.351582
Electrical‐transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin films
J. Appl. Phys. 72, 2396–2403 (1992)
https://doi.org/10.1063/1.351583
Magnetic properties of superconducting YBa2Cu3Ox permanent magnets prepared by the melt process
J. Appl. Phys. 72, 2404–2410 (1992)
https://doi.org/10.1063/1.351584
Sweeping of trapped flux in superconducting films by a micro‐heat‐flushing method
J. Appl. Phys. 72, 2411–2417 (1992)
https://doi.org/10.1063/1.351585
Dielectric properties of gold‐containing plasma‐polymerized thin films
J. Appl. Phys. 72, 2423–2431 (1992)
https://doi.org/10.1063/1.351587
Direct measurement of polymer temperature during laser ablation using a molecular thermometer
J. Appl. Phys. 72, 2440–2448 (1992)
https://doi.org/10.1063/1.351589
Influence of thin protective InAs layers on the optical quality of AlGaAs and quantum wells
J. Appl. Phys. 72, 2449–2452 (1992)
https://doi.org/10.1063/1.351590
High pressure refractive index measurements of 4:1 methanol:ethanol
J. Appl. Phys. 72, 2453–2461 (1992)
https://doi.org/10.1063/1.351591
Pyrolysis and laser ablation of plasma‐polymerized fluorocarbon films: Effects of gold particles
J. Appl. Phys. 72, 2462–2471 (1992)
https://doi.org/10.1063/1.351592
Raman spectroscopic characterization of KrF‐laser‐irradiated silicon
J. Appl. Phys. 72, 2472–2477 (1992)
https://doi.org/10.1063/1.351593
Hydrogen termination of the NH4F‐treated Si(111) surface studied by photoemission and surface infrared spectroscopy
J. Appl. Phys. 72, 2488–2491 (1992)
https://doi.org/10.1063/1.351541
Evaluation of local vibrational mode absorption caused by carbon in GaAs
J. Appl. Phys. 72, 2505–2507 (1992)
https://doi.org/10.1063/1.351543
The lifetime of a surface plasma wave on a semi‐infinite air/metal interface
J. Appl. Phys. 72, 2511–2513 (1992)
https://doi.org/10.1063/1.351545
Adding a heat bypass improves the thermal characteristics of a 50 μm spaced 8‐beam laser diode array
J. Appl. Phys. 72, 2514–2516 (1992)
https://doi.org/10.1063/1.351546
Electroluminescence efficiency increase due to recombination‐enhanced annealing of recombination centers in GaAs
J. Appl. Phys. 72, 2520–2522 (1992)
https://doi.org/10.1063/1.351548
Bonded silicon‐on‐sapphire wafers and devices
J. Appl. Phys. 72, 2526–2527 (1992)
https://doi.org/10.1063/1.352345
X‐ray characterization of InAs laser structures grown by molecular beam epitaxy
J. Appl. Phys. 72, 2528–2530 (1992)
https://doi.org/10.1063/1.351550
Micro‐Raman study on GaAs layers directly grown on (100) Si by molecular beam epitaxy
J. Appl. Phys. 72, 2531–2533 (1992)
https://doi.org/10.1063/1.351551
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.