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Self‐consistent analysis in the presence of phase‐randomizing processes for double‐barrier structures
J. Appl. Phys. 71, 3077–3090 (1992)
https://doi.org/10.1063/1.350999
The beam breakup instability in quadrupole and solenoidal electron‐beam transport systems
J. Appl. Phys. 71, 3091–3102 (1992)
https://doi.org/10.1063/1.351000
Unified theory of the backscattering of electromagnetic missiles by a perfectly conducting target
J. Appl. Phys. 71, 3103–3106 (1992)
https://doi.org/10.1063/1.351004
Optimization of injection current and feedback phase of an optically self‐locked laser diode
J. Appl. Phys. 71, 3114–3117 (1992)
https://doi.org/10.1063/1.351006
Control and conversion of the polarization of the electromagnetic wave
J. Appl. Phys. 71, 3118–3122 (1992)
https://doi.org/10.1063/1.351007
Opto‐optical switching in ion‐implanted poly(methyl methacrylate)‐waveguides
J. Appl. Phys. 71, 3123–3126 (1992)
https://doi.org/10.1063/1.350974
Acoustic field study in layered structures by means of x‐ray diffraction
J. Appl. Phys. 71, 3134–3137 (1992)
https://doi.org/10.1063/1.350979
Analytical relations between the phase of the photothermal signal and the thermal wavelength
J. Appl. Phys. 71, 3138–3142 (1992)
https://doi.org/10.1063/1.350980
The thermal conductivity of chemical‐vapor‐deposited diamond films on silicon
J. Appl. Phys. 71, 3143–3146 (1992)
https://doi.org/10.1063/1.350981
Peculiarities of pulse laser alloying: Influence of spatial distribution of the beam
J. Appl. Phys. 71, 3147–3158 (1992)
https://doi.org/10.1063/1.350956
A dynamic simulation of particle rearrangement in powder packings with realistic interactions
J. Appl. Phys. 71, 3164–3173 (1992)
https://doi.org/10.1063/1.350958
On flow through porous material using a generalized Schwarz–Christoffel theory
J. Appl. Phys. 71, 3174–3180 (1992)
https://doi.org/10.1063/1.350959
Temporal behavior of population densities of V atoms in an optically pumped V vapor laser
J. Appl. Phys. 71, 3181–3185 (1992)
https://doi.org/10.1063/1.350960
Effects of the energy distribution of fast electrons on H2 vibrational excitation in a tandem negative ion source
J. Appl. Phys. 71, 3193–3196 (1992)
https://doi.org/10.1063/1.350962
The influence of argon ion bombardment on form birefringence in thin films of titania
J. Appl. Phys. 71, 3201–3203 (1992)
https://doi.org/10.1063/1.350964
Measurement of azimuthal anchoring energy in nematic liquid crystals by transmitted and reflected light methods
J. Appl. Phys. 71, 3204–3215 (1992)
https://doi.org/10.1063/1.350965
Plasma etch effects on low‐temperature selective epitaxial growth of silicon
J. Appl. Phys. 71, 3225–3230 (1992)
https://doi.org/10.1063/1.350968
High quality In0.15Ga0.85As/AlxGa1−xAs strained multi quantum wells grown by metalorganic vapor phase epitaxy
J. Appl. Phys. 71, 3249–3255 (1992)
https://doi.org/10.1063/1.350971
The bonding of protective films of amorphic diamond to titanium
J. Appl. Phys. 71, 3260–3265 (1992)
https://doi.org/10.1063/1.351390
Shapes of completely wetted two‐dimensional powder compacts for applications to sintering
J. Appl. Phys. 71, 3266–3277 (1992)
https://doi.org/10.1063/1.350973
Interfacial roughness correlation in multilayer films: Influence of total film and individual layer thicknesses
J. Appl. Phys. 71, 3283–3293 (1992)
https://doi.org/10.1063/1.350976
The influence of substrate‐epitaxial layer chemical impurities on heterostructure electrical characteristics
J. Appl. Phys. 71, 3294–3299 (1992)
https://doi.org/10.1063/1.350977
Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy
J. Appl. Phys. 71, 3300–3306 (1992)
https://doi.org/10.1063/1.350949
Evolution of vacancy ordering and defect structure in epitaxial YSi2−x thin films on (111)Si
J. Appl. Phys. 71, 3307–3312 (1992)
https://doi.org/10.1063/1.350950
Stoichiometry‐dependent native acceptor and donor levels in Ga‐rich‐n‐type gallium arsenide
J. Appl. Phys. 71, 3325–3329 (1992)
https://doi.org/10.1063/1.350953
Observation of current filaments in GaAs/AlxGa1−xAs heterostructures using a time‐resolved imaging technique
J. Appl. Phys. 71, 3330–3335 (1992)
https://doi.org/10.1063/1.350954
Low‐temperature avalanche breakdown in p‐Ge: Influence of the acceptor concentration
J. Appl. Phys. 71, 3336–3338 (1992)
https://doi.org/10.1063/1.350955
An improved approach to the Shockley–Read–Hall recombination in inhomogeneous fields of space‐charge regions
J. Appl. Phys. 71, 3339–3349 (1992)
https://doi.org/10.1063/1.350929
Energy distribution of trapping states at grain boundaries in polycrystalline silicon
J. Appl. Phys. 71, 3350–3355 (1992)
https://doi.org/10.1063/1.350930
Electrical and structural properties of low resistivity tin‐doped indium oxide films
J. Appl. Phys. 71, 3356–3364 (1992)
https://doi.org/10.1063/1.350931
The different characteristics for heavy‐ and light‐hole resonant tunneling in Si1−xGex/Si double barrier structures
J. Appl. Phys. 71, 3365–3369 (1992)
https://doi.org/10.1063/1.350932
Admittance properties of thin/thick metal‐oxide‐semiconductor structures. I. Experiment and equivalent network
J. Appl. Phys. 71, 3381–3387 (1992)
https://doi.org/10.1063/1.350934
Auger recombination in HgCdTe quantum wires and quantum boxes
J. Appl. Phys. 71, 3394–3398 (1992)
https://doi.org/10.1063/1.350935
The measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates
J. Appl. Phys. 71, 3399–3407 (1992)
https://doi.org/10.1063/1.350936
The effect of ion beam treatment and subsequent annealing on Au/GaAs contacts
J. Appl. Phys. 71, 3408–3413 (1992)
https://doi.org/10.1063/1.350937
Electrical properties of polycrystalline chalcopyrite AgInS2 films
J. Appl. Phys. 71, 3414–3418 (1992)
https://doi.org/10.1063/1.350938
Relation between critical current densities and epitaxy of YBa2Cu3O7 thin films on MgO(100) and SrTiO3(100)
J. Appl. Phys. 71, 3419–3426 (1992)
https://doi.org/10.1063/1.350939
Analysis of a magnetization process based on a two sublattice model
J. Appl. Phys. 71, 3434–3438 (1992)
https://doi.org/10.1063/1.350942
Temperature dependence of domain‐wall coercive field in magnetic garnet films
J. Appl. Phys. 71, 3462–3466 (1992)
https://doi.org/10.1063/1.350946
Surface analysis of PbTiO3 films prepared by the sol‐gel method
J. Appl. Phys. 71, 3467–3470 (1992)
https://doi.org/10.1063/1.350947
Interaction of reactively sputtered TaOx thin films with In‐Sn‐O thin films and properties of TaOx thin films
J. Appl. Phys. 71, 3471–3478 (1992)
https://doi.org/10.1063/1.350948
A deconvolution procedure for photothermal and photoconductive spectra of amorphous silicon films
J. Appl. Phys. 71, 3479–3485 (1992)
https://doi.org/10.1063/1.350927
Polarization Raman microprobe analysis of laser melting and etching in silicon
J. Appl. Phys. 71, 3492–3505 (1992)
https://doi.org/10.1063/1.350903
Differential photocurrent spectroscopy: A novel technique for semiconductor characterization
J. Appl. Phys. 71, 3506–3509 (1992)
https://doi.org/10.1063/1.350904
Laser‐cleaning techniques for removal of surface particulates
J. Appl. Phys. 71, 3515–3523 (1992)
https://doi.org/10.1063/1.350906
A technique for measuring residual stress in SiC whiskers within an alumina matrix through Raman spectroscopy
J. Appl. Phys. 71, 3524–3531 (1992)
https://doi.org/10.1063/1.350907
Simulation of the step coverage for chemical vapor deposited silicon dioxide
J. Appl. Phys. 71, 3532–3537 (1992)
https://doi.org/10.1063/1.350908
Device application and structure observation for hemispherical‐grained Si
J. Appl. Phys. 71, 3538–3543 (1992)
https://doi.org/10.1063/1.350909
Grating coupling and intersubband absorption at 10 μm in GaAs/AlxGa1−xAs infrared quantum well waveguides
J. Appl. Phys. 71, 3562–3565 (1992)
https://doi.org/10.1063/1.350911
Shallow ohmic contact formation by sequential deposition of Pd/AuGe/Ag/Au on GaAs and rapid thermal annealing
J. Appl. Phys. 71, 3566–3571 (1992)
https://doi.org/10.1063/1.350912
Two‐dimensional numerical analysis of current blocking mechanism in InP buried heterostructure lasers
J. Appl. Phys. 71, 3572–3578 (1992)
https://doi.org/10.1063/1.350913
Preferred orientation in Cr‐ and Co‐based thin films and its effects on the read/write performance of the media
J. Appl. Phys. 71, 3579–3585 (1992)
https://doi.org/10.1063/1.350914
A comparative study of Si‐ and GaAs‐based devices for repetitive, high‐energy, pulsed switching applications
J. Appl. Phys. 71, 3586–3592 (1992)
https://doi.org/10.1063/1.350915
A method for doping fluctuations measurement in high resistivity silicon
J. Appl. Phys. 71, 3593–3599 (1992)
https://doi.org/10.1063/1.351389
Grating‐coupled quantum‐well infrared detectors: Theory and performance
J. Appl. Phys. 71, 3600–3610 (1992)
https://doi.org/10.1063/1.350916
Lowering of the growth temperature by the iodine incorporation for vapor‐phase epitaxy of ZnS
J. Appl. Phys. 71, 3611–3613 (1992)
https://doi.org/10.1063/1.350917
Lateral coupling between a silicon‐oxinitride waveguide and an amorphous Si photodiode
J. Appl. Phys. 71, 3614–3616 (1992)
https://doi.org/10.1063/1.350918
Tangentially phase matched second‐harmonic generation in various crystals
J. Appl. Phys. 71, 3620–3622 (1992)
https://doi.org/10.1063/1.350920
Excess noise induced in metal resistors as a result of dynamic processes
J. Appl. Phys. 71, 3623–3625 (1992)
https://doi.org/10.1063/1.350921
Importance of sample preheating in oxidation of GexSi1−x
J. Appl. Phys. 71, 3626–3627 (1992)
https://doi.org/10.1063/1.350922
Suppression of anomalous diffusion of ion‐implanted boron in silicon by laser processing
J. Appl. Phys. 71, 3628–3630 (1992)
https://doi.org/10.1063/1.350923
A quick thermoelectric technique for typing HgCdTe at liquid nitrogen temperature
J. Appl. Phys. 71, 3636–3638 (1992)
https://doi.org/10.1063/1.350926
Real‐time Raman measurement of Si(111) under low‐energy Ar+ ion irradiation
J. Appl. Phys. 71, 3645–3647 (1992)
https://doi.org/10.1063/1.350900
Erratum: ‘‘Optical properties of dilute hydrogen tungsten bronze thin films’’ [J. Appl. Phys. 69, 7788 (1991)]
J. Appl. Phys. 71, 3649–3650 (1992)
https://doi.org/10.1063/1.351403
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.
Celebrating notable advances in compound semiconductors: A tribute to Dr. Wladyslaw Walukiewicz
Kirstin Alberi, Junqiao Wu, et al.