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Representation of tails of periodic and infinite‐range signals: Towards a treatment for truncation
J. Appl. Phys. 71, 5303–5309 (1992)
https://doi.org/10.1063/1.350545
Instabilities in annealed proton exchange waveguides in lithium tantalate
J. Appl. Phys. 71, 5310–5317 (1992)
https://doi.org/10.1063/1.350546
AlGaAs diode laser blue shift resulting from fast neutron irradiation
J. Appl. Phys. 71, 5323–5331 (1992)
https://doi.org/10.1063/1.350548
Magnetic field enhanced performance of a copper hollow anode cathode laser
J. Appl. Phys. 71, 5338–5343 (1992)
https://doi.org/10.1063/1.350550
Longitudinal mode stability difference in Se‐ and Si‐doped AlGaAs lasers
J. Appl. Phys. 71, 5344–5346 (1992)
https://doi.org/10.1063/1.350551
Gain measurements of high‐pressure ultraviolet‐preionized self‐sustained discharge pumped atomic xenon laser
J. Appl. Phys. 71, 5347–5352 (1992)
https://doi.org/10.1063/1.350552
Anisotropic thermal conductivity in chemical vapor deposition diamond
J. Appl. Phys. 71, 5353–5356 (1992)
https://doi.org/10.1063/1.350553
Two‐dimensional inverse heat conduction problem of estimating the time‐varying strength of a line heat source
J. Appl. Phys. 71, 5357–5362 (1992)
https://doi.org/10.1063/1.350554
Longitudinal electron diffusion coefficients in gases: Noble gases
J. Appl. Phys. 71, 5363–5371 (1992)
https://doi.org/10.1063/1.350555
Mass spectroscopic study of CH3 radicals produced in a hollow cathode discharge cell
J. Appl. Phys. 71, 5372–5375 (1992)
https://doi.org/10.1063/1.350556
Frequency up‐conversion of a high‐power microwave pulse propagating in a self‐generated plasma
J. Appl. Phys. 71, 5376–5380 (1992)
https://doi.org/10.1063/1.350557
Resonator amplification of microwave emission from a relativistic beam‐plasma system
J. Appl. Phys. 71, 5381–5385 (1992)
https://doi.org/10.1063/1.350558
The formation and annealing of dislocation damage from high‐dose self‐ion implantation of aluminum
J. Appl. Phys. 71, 5386–5390 (1992)
https://doi.org/10.1063/1.350559
Calorimetric measurements of the thermal relaxation in nanocrystalline platinum
J. Appl. Phys. 71, 5391–5394 (1992)
https://doi.org/10.1063/1.350560
Molecular‐dynamics simulations of bulk and surface damage production in low‐energy Cu→Cu bombardment
J. Appl. Phys. 71, 5410–5418 (1992)
https://doi.org/10.1063/1.350563
Structure and crystallization of low‐pressure chemical vapor deposited silicon films using Si2H6 gas
J. Appl. Phys. 71, 5427–5432 (1992)
https://doi.org/10.1063/1.350565
Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions
J. Appl. Phys. 71, 5433–5444 (1992)
https://doi.org/10.1063/1.350566
A real time study of the growth of microcrystalline silicon on transparent conducting oxide substrates
J. Appl. Phys. 71, 5445–5449 (1992)
https://doi.org/10.1063/1.350515
Study of the initial formation of silicon carbide by reaction of tetraethyl silane with silicon
J. Appl. Phys. 71, 5450–5459 (1992)
https://doi.org/10.1063/1.350516
Investigation of the photorefractive effect in Bi2TeO5
J. Appl. Phys. 71, 5465–5473 (1992)
https://doi.org/10.1063/1.350518
Phosphorus diffusion into silicon from a spin‐on source using rapid thermal processing
J. Appl. Phys. 71, 5474–5478 (1992)
https://doi.org/10.1063/1.350519
Investigations of the electrical properties of electrodeposited CuInSe2 thin films
J. Appl. Phys. 71, 5479–5483 (1992)
https://doi.org/10.1063/1.350520
Progress towards spin‐polarized scanning tunneling microscopy
J. Appl. Phys. 71, 5489–5499 (1992)
https://doi.org/10.1063/1.350522
Hysteresis of the work function of Co(0001) surface resulting from an allotropic transformation
J. Appl. Phys. 71, 5500–5503 (1992)
https://doi.org/10.1063/1.350523
A simplified and improved model of ideal and almost ideal silicon p‐n junctions: The role of oxygen
J. Appl. Phys. 71, 5504–5516 (1992)
https://doi.org/10.1063/1.350524
Analysis of dark current‐voltage characteristics of Al/chlorophyll a/Ag sandwich cells
J. Appl. Phys. 71, 5523–5530 (1992)
https://doi.org/10.1063/1.350526
Investigation of (111) strained layers: Growth, photoluminescence, and internal electric fields
J. Appl. Phys. 71, 5531–5538 (1992)
https://doi.org/10.1063/1.350527
Properties of NiFe‐N films prepared by rf sputtering in nitrogen‐argon gas mixtures
J. Appl. Phys. 71, 5539–5542 (1992)
https://doi.org/10.1063/1.350528
In situ monitoring and Hall measurements of GaN grown with GaN buffer layers
J. Appl. Phys. 71, 5543–5549 (1992)
https://doi.org/10.1063/1.350529
Probing of high Tc sample texturing with a potentiometric ring
J. Appl. Phys. 71, 5554–5559 (1992)
https://doi.org/10.1063/1.350531
Abnormal Jc changes against temperature of the Bi1.6Pb0.4Sr2Ca2Cu3Ox
J. Appl. Phys. 71, 5569–5571 (1992)
https://doi.org/10.1063/1.350534
Low‐resistivity epitaxial YBa2Cu3O7 thin films with improved microstructure and reduced microwave losses
U. Poppe; N. Klein; U. Dähne; H. Soltner; C. L. Jia; B. Kabius; K. Urban; A. Lubig; K. Schmidt; S. Hensen; S. Orbach; G. Müller; H. Piel
J. Appl. Phys. 71, 5572–5578 (1992)
https://doi.org/10.1063/1.350535
Energy barriers for thermal reversal of interacting single domain particles
J. Appl. Phys. 71, 5579–5584 (1992)
https://doi.org/10.1063/1.351376
Magnetic properties of ternary Co‐B‐C melt spun alloys amorphized over an extended concentration range
J. Appl. Phys. 71, 5585–5590 (1992)
https://doi.org/10.1063/1.350536
Glassy polarization in the ferroelectric tungsten bronze (Ba,Sr)Nb2O6
J. Appl. Phys. 71, 5591–5595 (1992)
https://doi.org/10.1063/1.350537
Densification induced dielectric properties change in amorphous BaTiO3 thin films
J. Appl. Phys. 71, 5596–5600 (1992)
https://doi.org/10.1063/1.350538
Optical properties of epitaxial CoSi2/Si and CoSi2 particles in Si from 0.062 to 2.76 eV
J. Appl. Phys. 71, 5601–5605 (1992)
https://doi.org/10.1063/1.350539
Positron annihilation studies in the field induced depletion regions of metal‐oxide‐semiconductor structures
J. Appl. Phys. 71, 5606–5609 (1992)
https://doi.org/10.1063/1.350540
Luminescence characteristics of the (GaP)n(GaAs)n/GaAs atomic layer short‐period superlattices
J. Appl. Phys. 71, 5614–5618 (1992)
https://doi.org/10.1063/1.350491
Nonequilibrium luminescence at the E+Δ gap in GaAs with Si‐δ doping
J. Appl. Phys. 71, 5619–5622 (1992)
https://doi.org/10.1063/1.350492
Low energy carbon ion bombardment on indium phosphide and its implications for alkane‐based reactive ion etching
J. Appl. Phys. 71, 5623–5628 (1992)
https://doi.org/10.1063/1.350493
Atomic disorder induced by mechanical milling in the Nb3Au intermetallic compound
J. Appl. Phys. 71, 5650–5653 (1992)
https://doi.org/10.1063/1.350498
Effects of plasma and/or 193 nm excimer‐laser irradiation in chemical‐vapor deposition of boron films from B2H6+He
J. Appl. Phys. 71, 5654–5664 (1992)
https://doi.org/10.1063/1.350499
Influences of a high excitation frequency (70 MHz) in the glow discharge technique on the process plasma and the properties of hydrogenated amorphous silicon
F. Finger; U. Kroll; V. Viret; A. Shah; W. Beyer; X. ‐M. Tang; J. Weber; A. Howling; Ch. Hollenstein
J. Appl. Phys. 71, 5665–5674 (1992)
https://doi.org/10.1063/1.350500
Pulsed laser deposition of diamond‐like carbon films
David L. Pappas; Katherine L. Saenger; John Bruley; William Krakow; Jerome J. Cuomo; Tieer Gu; Robert W. Collins
J. Appl. Phys. 71, 5675–5684 (1992)
https://doi.org/10.1063/1.350501
A vectorial finite element formulation for electromagnetic wave propagation in helical systems
J. Appl. Phys. 71, 5689–5693 (1992)
https://doi.org/10.1063/1.350503
Interactions between implanted Mg and base p‐type dopant (Be,Zn,C) in heterojunction bipolar transistor devices
J. Appl. Phys. 71, 5694–5698 (1992)
https://doi.org/10.1063/1.351355
A simple technique for simultaneous fabrication of p+/n diodes and ohmic contacts on n‐type InP
J. Appl. Phys. 71, 5699–5702 (1992)
https://doi.org/10.1063/1.351356
A model for the Fe‐related emission at 3057 cm−1 in GaAs
J. Appl. Phys. 71, 5703–5705 (1992)
https://doi.org/10.1063/1.350504
Auger generation suppression in narrow‐gap semiconductors using the magnetoconcentration effect
J. Appl. Phys. 71, 5706–5708 (1992)
https://doi.org/10.1063/1.350505
Efficient pulsed microwave excitation of a high‐pressure excimer discharge
J. Appl. Phys. 71, 5712–5714 (1992)
https://doi.org/10.1063/1.350507
Disordering of AlGaAs/GaAs quantum well structures using low dose oxygen implantation
J. Appl. Phys. 71, 5715–5717 (1992)
https://doi.org/10.1063/1.350508
Pulsed laser deposition of stoichiometric LiNbO3 thin films by using O2 and Ar gas mixtures as ambients
J. Appl. Phys. 71, 5718–5720 (1992)
https://doi.org/10.1063/1.350509
The effects of pressure on the nucleation rate of an undercooled liquid
J. Appl. Phys. 71, 5721–5723 (1992)
https://doi.org/10.1063/1.350510
Substrate bias effects on diamond synthesis in a magnetoactive microwave plasma
J. Appl. Phys. 71, 5724–5726 (1992)
https://doi.org/10.1063/1.350511
Comments on the steady state photocarrier grating technique to measure diffusion lengths
J. Appl. Phys. 71, 5727 (1992)
https://doi.org/10.1063/1.350512
Erratum: ‘‘Magnetic properties of high‐density Mn‐Zn ferrites’’ [J. Appl. Phys. 69, 5349 (1991)]
J. Appl. Phys. 71, 5730 (1992)
https://doi.org/10.1063/1.351405
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.