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Volume 70, Issue 1
1 July 1991
Journal of Applied Physics Cover Image for Volume 70, Issue 1
All Issues
ISSN 0021-8979
EISSN 1089-7550
Backscattering of electromagnetic missile by a perfectly conducting elliptical cylinder
Wen Geyi; Ruan Chengli; Lin Weigan
J. Appl. Phys. 70, 1–3 (1991) https://doi.org/10.1063/1.350309
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Beam divergence from sharp emitters in a general longitudinal magnetic field
Y. Y. Lau; D. G. Colombant; Mark D. Pilloff
J. Appl. Phys. 70, 4–12 (1991) https://doi.org/10.1063/1.350259
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Enhanced polarization‐dependent coupling between an optical waveguide and a laterally coupled photodetector
K. Kapser; P. P. Deimel
J. Appl. Phys. 70, 13–16 (1991) https://doi.org/10.1063/1.350327
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New symmetrical pi‐conjugated molecules having large third‐order optical nonlinearities
Takashi Kurihara; Naoki Oba; Yuhei Mori; Satoru Tomaru; Toshikuni Kaino
J. Appl. Phys. 70, 17–19 (1991) https://doi.org/10.1063/1.350306
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Origin of picosecond‐pulse‐induced, degenerate four‐wave‐mixing signals in KTa1−xNbxO3 crystals
Huimin Liu; Richard C. Powell; L. A. Boatner
J. Appl. Phys. 70, 20–28 (1991) https://doi.org/10.1063/1.350312
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Reflectance modulator utilizing an electro‐optic polymer film
C. B. Rider; J. S. Schildkraut; M. Scozzafava
J. Appl. Phys. 70, 29–32 (1991) https://doi.org/10.1063/1.350300
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Growth and self‐pumped phase conjugation of Ce‐doped KNa(Sr0.61Ba0.39)0.9Nb2O6 crystal
Daliang Sun; Jun Chen; Xinliang Lu; Yongyan Song; Zongshu Shao; Huanchu Chen; Jingjun Xu; Yuanqing Wu; Simin Liu; Guangyin Zhang
J. Appl. Phys. 70, 33–35 (1991) https://doi.org/10.1063/1.350279
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Temperature dependence of degenerate four wave mixing in azo dye doped polymer films
I. V. Tomov; T. E. Dutton; B. VanWonterghem; P. M. Rentzepis
J. Appl. Phys. 70, 36–40 (1991) https://doi.org/10.1063/1.350283
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Investigation of electron density and velocity distribution in high‐pressure discharges for excimer laser pumping using laser Thomson scattering
K. Uchino; Y. Kubo; K. Muraoka; T. Sakoda; H. Yamakoshi; M. Kato; A. Takahashi; M. Maeda
J. Appl. Phys. 70, 41–45 (1991) https://doi.org/10.1063/1.350292
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Grating‐assisted surface acoustic wave directional couplers
G. Golan; G. Griffel; A. Seidman; N. Croitoru
J. Appl. Phys. 70, 46–52 (1991) https://doi.org/10.1063/1.350251
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Propagation of shear horizontal surface acoustic waves parallel to the grooves of a random grating
A. A. Maradudin; Xuemei Huang; A. P. Mayer
J. Appl. Phys. 70, 53–62 (1991) https://doi.org/10.1063/1.350270
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Finite element analysis of nonlinear, coupled thermal‐electric problems: The memory switch
Struan R. Robertson; Kuen‐Liang Liao
J. Appl. Phys. 70, 63–68 (1991) https://doi.org/10.1063/1.350374
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Optical properties of oxygen‐deficient centers in silica glasses fabricated in H2 or vacuum ambient
Koichi Awazu; Hiroshi Kawazoe; Ken‐ichi Muta
J. Appl. Phys. 70, 69–74 (1991) https://doi.org/10.1063/1.350245
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Interaction of CO2 laser pulses of microsecond duration with Al2O3 ceramic substrates
H. Beyer; W. Ross; R. Rudolph; A. Michaelis; J. Uhlenbusch; W. Viöl
J. Appl. Phys. 70, 75–81 (1991) https://doi.org/10.1063/1.350246
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Ion energy distributions in radio‐frequency discharges
D. Field; D. F. Klemperer; P. W. May; Y. P. Song
J. Appl. Phys. 70, 82–92 (1991) https://doi.org/10.1063/1.350247
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A model for steady‐state breakdown plasmas in microwave transmit‐receive tubes
H. Hamnén; D. Anderson; M. Lisak
J. Appl. Phys. 70, 93–98 (1991) https://doi.org/10.1063/1.350222
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Probe diagnostics of anisotropic plasma in a hollow cathode arc
S. Klagge; A. Lunk
J. Appl. Phys. 70, 99–105 (1991) https://doi.org/10.1063/1.350223
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A high‐power two stage traveling‐wave tube amplifier
D. Shiffler; J. A. Nation; L. Schachter; J. D. Ivers; G. S. Kerslick
J. Appl. Phys. 70, 106–113 (1991) https://doi.org/10.1063/1.350322
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Theoretical studies of high‐power Cerenkov amplifiers
L. Schächter; J. A. Nation; D. A. Shiffler
J. Appl. Phys. 70, 114–124 (1991) https://doi.org/10.1063/1.350323
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Identification of infrared absorption peaks of amorphous silicon carbon hydrogen alloy prepared using ethylene
Jhy‐Hong Chen; Wen‐Jyh Sah; Si‐Chen Lee
J. Appl. Phys. 70, 125–130 (1991) https://doi.org/10.1063/1.350324
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Phase separation in ion bombarded FeNi Invar alloys
M. R. Gallas; L. Amaral; J. A. H. da Jornada
J. Appl. Phys. 70, 131–134 (1991) https://doi.org/10.1063/1.350325
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Nematic director orientation in a liquid‐crystal‐dispersed polymer: A deuterium nuclear‐magnetic‐resonance approach
R. Stannarius; G. P. Crawford; L. C. Chien; J. W. Doane
J. Appl. Phys. 70, 135–143 (1991) https://doi.org/10.1063/1.350326
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Radiation damage and optical properties of Ar+‐implanted GaP
E. Wendler; W. Wesch; G. Götz
J. Appl. Phys. 70, 144–149 (1991) https://doi.org/10.1063/1.350302
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Determination of the elastic constants of anisotropic materials using laser‐generated ultrasonic signals
B. Castagnede; Kwang Yul Kim; Wolfgang Sachse; Michael O. Thompson
J. Appl. Phys. 70, 150–157 (1991) https://doi.org/10.1063/1.350303
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A numerical simulation of the R‐curve behavior in microcracking materials
Michael Murat; Robert Englman; Zeev Jaeger
J. Appl. Phys. 70, 158–166 (1991) https://doi.org/10.1063/1.350304
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Dynamic high‐pressure properties of AlN ceramic as determined by flyer plate impact
Z. Rosenberg; N. S. Brar; S. J. Bless
J. Appl. Phys. 70, 167–171 (1991) https://doi.org/10.1063/1.350337
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Atomistic and computer modeling of metallization failure of integrated circuits by electromigration
R. Kirchheim; U. Kaeber
J. Appl. Phys. 70, 172–181 (1991) https://doi.org/10.1063/1.350305
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Electron microscope studies of interdiffusion in molecular beam epitaxy grown GaInAs/AlInAs multilayers
R. E. Mallard; N. J. Long; G. R. Booker; E. G. Scott; M. Hockly; M. Taylor
J. Appl. Phys. 70, 182–192 (1991) https://doi.org/10.1063/1.350376
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Structural and electrical properties of ZrSi2 and Zr2CuSi4 formed by rapid thermal processing
Michael Setton; Jan Van der Spiegel
J. Appl. Phys. 70, 193–197 (1991) https://doi.org/10.1063/1.350307
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Strained GaAs layers grown on GaAs substrates with an intermediate GaAs1−xPx buffer layer
G. Strobl; A. Freundlich; J. C. Grenet; M. Teissere; G. Neu
J. Appl. Phys. 70, 198–203 (1991) https://doi.org/10.1063/1.350308
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Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures
Soon Jae Yu; Hajime Asahi; Shuichi Emura; Shun‐ichi Gonda; Kiichi Nakashima
J. Appl. Phys. 70, 204–208 (1991) https://doi.org/10.1063/1.350310
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A quantitative treatment for deep level transient spectroscopy under minority‐carrier injection
N. Fourches
J. Appl. Phys. 70, 209–214 (1991) https://doi.org/10.1063/1.350311
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DX‐center‐related features by capacitance measurements in AlGaAs
C. Ghezzi; E. Gombia; R. Mosca
J. Appl. Phys. 70, 215–220 (1991) https://doi.org/10.1063/1.350313
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Study of electrical damage in GaAs induced by SiCl4 reactive ion etching
D. Lootens; P. Van Daele; P. Demeester; P. Clauws
J. Appl. Phys. 70, 221–224 (1991) https://doi.org/10.1063/1.350314
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Intensity‐dependent minority‐carrier lifetime in III‐V semiconductors due to saturation of recombination centers
R. K. Ahrenkiel; B. M. Keyes; D. J. Dunlavy
J. Appl. Phys. 70, 225–231 (1991) https://doi.org/10.1063/1.350315
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Dynamics of current filaments in p‐type germanium under the influence of a transverse magnetic field
W. Clauss; U. Rau; J. Peinke; J. Parisi; A. Kittel; M. Bayerbach; R. P. Huebener
J. Appl. Phys. 70, 232–235 (1991) https://doi.org/10.1063/1.350316
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Testing the accuracy of calculated equilibrium carrier concentrations in the presence of surface fields
Jon Geist; Jeremiah R. Lowney; C. R. James; A. M. Robinson
J. Appl. Phys. 70, 236–242 (1991) https://doi.org/10.1063/1.350317
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Mechanism of dc conduction in lightly doped polypyrrole films
Ramadhar Singh; R. P. Tandon; Subhas Chandra
J. Appl. Phys. 70, 243–245 (1991) https://doi.org/10.1063/1.350318
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The dielectric response of boron carbide due to hopping conduction
L. Zuppiroli; N. Papandreou; R. Kormann
J. Appl. Phys. 70, 246–252 (1991) https://doi.org/10.1063/1.350319
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Solutions to current crowding in circular vias for contact resistance measurements
L. H. Allen; M. Y. Zhang; J. W. Mayer; E. G. Colgan; R. Young
J. Appl. Phys. 70, 253–258 (1991) https://doi.org/10.1063/1.350320
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The effect of hydrogen treatment on damaged and undamaged metal‐insulator‐semiconductor solar cells
Laila S. Babsail; S. Roy Morrison
J. Appl. Phys. 70, 259–265 (1991) https://doi.org/10.1063/1.350321
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An electroreflectance study of n‐ and p‐type gallium arsenide in aqueous electrolytes
R. A. Batchelor; A. Hamnett; R. Peat; L. M. Peter
J. Appl. Phys. 70, 266–276 (1991) https://doi.org/10.1063/1.350328
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Characterization of Te‐doped GaSb grown by molecular beam epitaxy using SnTe
J. F. Chen; A. Y. Cho
J. Appl. Phys. 70, 277–281 (1991) https://doi.org/10.1063/1.350296
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Specific resistivity of ohmic contacts to n‐type direct band‐gap III‐V compound semiconductors
S. M. Cho; J. D. Lee; H. H. Lee
J. Appl. Phys. 70, 282–287 (1991) https://doi.org/10.1063/1.350297
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Surface breakdown of silicon
R. J. Feuerstein; B. Senitzky
J. Appl. Phys. 70, 288–298 (1991) https://doi.org/10.1063/1.350298
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On the thermoelectric power in n‐channel inversion layers of ternary chalcopyrite semiconductors under magnetic quantization
K. P. Ghatak; S. N. Biswas
J. Appl. Phys. 70, 299–304 (1991) https://doi.org/10.1063/1.350299
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Bound to continuum superlattice miniband long wavelength GaAs/AlxGa1−xAs photoconductors
S. D. Gunapala; B. F. Levine; Naresh Chand
J. Appl. Phys. 70, 305–308 (1991) https://doi.org/10.1063/1.350301
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Percolation in implanted Si film
Atsushi Hiraiwa; Takashi Kobayashi
J. Appl. Phys. 70, 309–312 (1991) https://doi.org/10.1063/1.350274
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Surface properties of p‐Hg1−xCdxTe
P. Höschl; P. Moravec; J. Franc; R. Grill; E. Belas
J. Appl. Phys. 70, 313–318 (1991) https://doi.org/10.1063/1.350375
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Electron‐optical‐phonon scattering rates in a rectangular semiconductor quantum wire
K. W. Kim; M. A. Stroscio; A. Bhatt; R. Mickevicius; V. V. Mitin
J. Appl. Phys. 70, 319–327 (1991) https://doi.org/10.1063/1.350275
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Electron lifetime at the surface of insulators: α‐S, red HgI2, and p‐chloranil
Elías López‐Cruz
J. Appl. Phys. 70, 328–331 (1991) https://doi.org/10.1063/1.350276
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Cross‐sectional transmission electron microscopic study of Au/GaP and Au/InP contacts
B. Pécz; R. Veresegyházy; G. Radnóczi; A. Barna; I. Mojzes; O. Geszti; Gy. Vincze
J. Appl. Phys. 70, 332–336 (1991) https://doi.org/10.1063/1.350277
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Self‐consistent solution of the Poisson and Schrödinger equations in accumulated semiconductor‐insulator interfaces
J. Suñé; P. Olivo; B. Riccó
J. Appl. Phys. 70, 337–345 (1991) https://doi.org/10.1063/1.350278
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Structural identification of the silicon and nitrogen dangling‐bond centers in amorphous silicon nitride
William L. Warren; F. Christopher Rong; Edward H. Poindexter; Gary J. Gerardi; Jerzy Kanicki
J. Appl. Phys. 70, 346–354 (1991) https://doi.org/10.1063/1.350280
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Analysis and modeling of quantum waveguide structures and devices
Andreas Weisshaar; Jenifer Lary; Stephen M. Goodnick; Vijai K. Tripathi
J. Appl. Phys. 70, 355–366 (1991) https://doi.org/10.1063/1.350281
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Effect of aging on Tc of YBa2Cu3O7−y irradiated by electron beam
Yoshitake Nishi; Seiichiro Takagi; Kohji Yasuda; Keisuke Itoh
J. Appl. Phys. 70, 367–371 (1991) https://doi.org/10.1063/1.350282
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Magnetic properties of Ba2Me2Fe28O46 (Me2‐X, Me=Ni, Cu, Mg, and Zn) hexaferrites
B. X. Gu
J. Appl. Phys. 70, 372–375 (1991) https://doi.org/10.1063/1.350284
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Millimeter‐wave dielectric properties of epitaxial vanadium dioxide thin films
P. J. Hood; J. F. DeNatale
J. Appl. Phys. 70, 376–381 (1991) https://doi.org/10.1063/1.350285
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Quantitative measurement of space‐charge effects in lead zirconate‐titanate memories
J. F. Scott; C. A. Araujo; B. M. Melnick; L. D. McMillan; R. Zuleeg
J. Appl. Phys. 70, 382–388 (1991) https://doi.org/10.1063/1.350286
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Time‐resolved reflectivity measurements of temperature distributions during swept‐line electron‐beam heating of silicon
J. M. C. England; N. Zissis; P. J. Timans; H. Ahmed
J. Appl. Phys. 70, 389–397 (1991) https://doi.org/10.1063/1.350287
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Investigation of strain in metalorganic vapor‐phase epitaxy grown ZnTe layers by optical methods
H. Leiderer; G. Jahn; M. Silberbauer; W. Kuhn; H. P. Wagner; W. Limmer; W. Gebhardt
J. Appl. Phys. 70, 398–404 (1991) https://doi.org/10.1063/1.350288
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Optical properties of InAs/InP strained single quantum wells grown by organometallic vapor‐phase epitaxy
R. P. Schneider, Jr.; B. W. Wessels
J. Appl. Phys. 70, 405–408 (1991) https://doi.org/10.1063/1.350289
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A modified harmonic oscillator approximation scheme for the dielectric constants of AlxGa1−xAs
Fred L. Terry, Jr.
J. Appl. Phys. 70, 409–417 (1991) https://doi.org/10.1063/1.350290
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Raman scattering by interface phonons in GaAs‐AlAs multiple‐quantum‐well structures: Correlation between Raman and high‐resolution electron microscopy results
K. T. Tsen; David J. Smith; S.‐C. Y. Tsen; Nathan S. Kumar; H. Morkoc
J. Appl. Phys. 70, 418–421 (1991) https://doi.org/10.1063/1.350291
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Atmospheric impregnation of porous silicon at room temperature
L. T. Canham; M. R. Houlton; W. Y. Leong; C. Pickering; J. M. Keen
J. Appl. Phys. 70, 422–431 (1991) https://doi.org/10.1063/1.350293
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Low‐threshold GaAs/AlGaAs quantum‐well lasers grown by organometallic vapor‐phase epitaxy using trimethylamine alane
W. S. Hobson; J. P. van der Ziel; A. F. J. Levi; J. O’Gorman; C. R. Abernathy; M. Geva; L. C. Luther; V. Swaminathan
J. Appl. Phys. 70, 432–435 (1991) https://doi.org/10.1063/1.350294
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A study of Fe‐Ni‐B ultrafine alloy particles produced by reduction with borohydride
Zheng Hu; Yuanfu Hsia; Jianguo Zheng; Jianyi Shen; Qijie Yan; Lemei Dai
J. Appl. Phys. 70, 436–438 (1991) https://doi.org/10.1063/1.350295
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p‐type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping
K. Ohkawa; T. Mitsuyu
J. Appl. Phys. 70, 439–442 (1991) https://doi.org/10.1063/1.350271
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Switchable vanadium oxide films by a sol‐gel process
D. P. Partlow; S. R. Gurkovich; K. C. Radford; L. J. Denes
J. Appl. Phys. 70, 443–452 (1991) https://doi.org/10.1063/1.350272
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Detection of hydrogen from the photodissociative splitting of water through hydrogen‐oxygen separation over a thin Pd film
H. Dannetun; I. Lundström; L.‐G. Petersson
J. Appl. Phys. 70, 453–456 (1991) https://doi.org/10.1063/1.350273
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On the reaction of Pt with SiO2 substrates: Observation of the Pt3Si phase with the Cu3Au superstructure
Ryszard Lamber; Nils I. Jaeger
J. Appl. Phys. 70, 457–461 (1991) https://doi.org/10.1063/1.350248
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Pyrolytic and photolytic dissociation of trimethylgallium on Si and Au substrates
Satoshi Shogen; Yutaka Matsumi; Masahiro Kawasaki; Isamu Toyoshima; Hideo Okabe
J. Appl. Phys. 70, 462–468 (1991) https://doi.org/10.1063/1.350249
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An analytical model for organic‐based thin‐film transistors
Gilles Horowitz; Philippe Delannoy
J. Appl. Phys. 70, 469–475 (1991) https://doi.org/10.1063/1.350250
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Electron‐beam‐induced current images of sectioned p/n junctions in silicon: Influence of surface states at low acceleration voltages
Reinhard Kuhnert
J. Appl. Phys. 70, 476–484 (1991) https://doi.org/10.1063/1.350252
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A new functional, resonant‐tunneling bipolar transistor with a superlattice emitter
Wen‐Chau Liu; Wen‐Shiung Lour
J. Appl. Phys. 70, 485–489 (1991) https://doi.org/10.1063/1.350253
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Electron‐acoustic phonon scattering in SiO2 determined from a pseudo‐potential for energies of E≳EBZ
J. N. Bradford; S. Woolf
J. Appl. Phys. 70, 490–492 (1991) https://doi.org/10.1063/1.350254
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Comment on ‘‘Spreading of liquid droplets on cylindrical surfaces: Accurate determination of contact angle’’ [J. Appl. Phys. 70, 493 (1991)]
B. J. Carroll
J. Appl. Phys. 70, 493–494 (1991) https://doi.org/10.1063/1.350255
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Reply to ‘‘Comment on ‘Spreading of liquid droplets on cylindrical surfaces: Accurate determination of contact angle’ ’’ [J. Appl. Phys. 67, 1352 (1990)]
H. D. Wagner
J. Appl. Phys. 70, 495 (1991) https://doi.org/10.1063/1.350256
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Surface resistance studies of laser‐deposited superconducting Tl2Ba2CaCu2O8 films
M. M. Eddy; J. Z. Sun; R. D. Hammond; L. Drabeck; I. B. Ferreira; K. Holczer; G. Grüner
J. Appl. Phys. 70, 496–498 (1991) https://doi.org/10.1063/1.350257
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Interference effects in x‐ray double‐crystal rocking curves of Ga1−xAlxAs/GaAs laser structures and superlattices
P. Franzosi; B. Jenichen
J. Appl. Phys. 70, 499–501 (1991) https://doi.org/10.1063/1.350258
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Effects of in situ treatment on InGaAs/InP heterointerfaces produced by organometallic chemical vapor deposition regrowth
W‐P. Hong; C. Caneau; J. R. Hayes; R. Bhat; G. K. Chang; C. Nguyen; Y. H. Jeong; S. Hadjipanteli; A. A. Illiadis
J. Appl. Phys. 70, 502–504 (1991) https://doi.org/10.1063/1.350260
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Profiling of BaTiO3 ion beam sputtering by optical spectroscopy
J. D. Klein; A. Yen
J. Appl. Phys. 70, 505–507 (1991) https://doi.org/10.1063/1.350261
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Folded phonon spectra of progressively annealed amorphous Si/Ge superlattices
Sunil Kumar; H. J. Trodahl
J. Appl. Phys. 70, 508–510 (1991) https://doi.org/10.1063/1.350262
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Electrical characters of oxygen defects in silicon subjected to intrinsic gettering treatment
Jianming Li
J. Appl. Phys. 70, 511–513 (1991) https://doi.org/10.1063/1.350263
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Specific resistivity of delta‐doped contacts in n‐GaAs
D. L. Marcy; E. W. Maby; P. G. Newman; R. Khanna
J. Appl. Phys. 70, 514–516 (1991) https://doi.org/10.1063/1.350264
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Free‐electron laser with longitudinal wiggler in a waveguide partially filled with a relativistic electron beam
Hassan Mehdian; Un‐Hak Hwang; Joseph E. Willett
J. Appl. Phys. 70, 517–519 (1991) https://doi.org/10.1063/1.350265
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Tunneling stabilized, magnetic force microscopy with a gold‐coated, nickel‐film tipa)
John Moreland; Paul Rice
J. Appl. Phys. 70, 520–522 (1991) https://doi.org/10.1063/1.350266
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Scanning tunneling microscopy on rough surfaces‐quantitative image analysis
G. Reiss; H. Brückl; J. Vancea; R. Lecheler; E. Hastreiter
J. Appl. Phys. 70, 523–525 (1991) https://doi.org/10.1063/1.350267
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Preparation of TlCaBaCuO high‐Tc superconducting thin films on LaAlO3 substrates
S. L. Yan; H. L. Cao; X. M. Yang; X. D. Zhou
J. Appl. Phys. 70, 526–528 (1991) https://doi.org/10.1063/1.350268
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Impact ionization, recombination, and visible light emission in AlGaAs/GaAs high electron mobility transistorsa)
Enrico Zanoni; Alessandro Paccagnella; Pietro Pisoni; Paolo Telaroli; Carlo Tedesco; Claudio Canali; Nicoletta Testa; Manfredo Manfredi
J. Appl. Phys. 70, 529–531 (1991) https://doi.org/10.1063/1.350269
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Erratum: ‘‘A transmission electron microscope study of twin structure in GaAs/GaAs (111)B grown via molecular‐beam epitaxy’’ [J. Appl. Phys. 69, 2219 (1991)]
K. C. Rajkumar; P. Chen; A. Madhukar
J. Appl. Phys. 70, 532 (1991) https://doi.org/10.1063/1.350389
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