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Velocity ratio measurements of a gyrotron electron beam

W. C. Guss; T. L. Grimm; K. E. Kreischer; J. T. Polevoy; R. J. Temkin

J. Appl. Phys. 69, 3789–3795 (1991) https://doi.org/10.1063/1.348479

Abstract

View articletitled, Velocity ratio measurements of a gyrotron electron beam

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The effect of auxiliary light on the performance of the NaCl:OH⁻ color center laser

Timothy J. Carrig; Clifford R. Pollock

J. Appl. Phys. 69, 3796–3799 (1991) https://doi.org/10.1063/1.348480

Abstract

View articletitled, The effect of auxiliary light on the performance of the NaCl:OH− color center laser

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Power extraction studies in a gasdynamic laser

Purandar Chakravarty; N. M. Reddy; K. P. J. Reddy

J. Appl. Phys. 69, 3800–3806 (1991) https://doi.org/10.1063/1.348481

Abstract

View articletitled, Power extraction studies in a gasdynamic laser

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Analysis of asymmetric fringe patterns of third‐harmonic generation in a molecular crystal

Hideki Kobayashi; Ken’ichi Kubodera

J. Appl. Phys. 69, 3807–3810 (1991) https://doi.org/10.1063/1.348482

Abstract

View articletitled, Analysis of asymmetric fringe patterns of third‐harmonic generation in a molecular crystal

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Electromagnetically generated acoustic determination of delamination

W. Imaino

J. Appl. Phys. 69, 3811–3815 (1991) https://doi.org/10.1063/1.348453

Abstract

View articletitled, Electromagnetically generated acoustic determination of delamination

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Phonon attenuation and velocity measurements in transparent materials by picosecond acoustic interferometry

H. ‐N. Lin; R. J. Stoner; H. J. Maris; J. Tauc

J. Appl. Phys. 69, 3816–3822 (1991) https://doi.org/10.1063/1.348958

Abstract

View articletitled, Phonon attenuation and velocity measurements in transparent materials by picosecond acoustic interferometry

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Sheath voltage ratio for asymmetric rf discharges

M. V. Alves; M. A. Lieberman; V. Vahedi; C. K. Birdsall

J. Appl. Phys. 69, 3823–3829 (1991) https://doi.org/10.1063/1.348436

Abstract

View articletitled, Sheath voltage ratio for asymmetric rf discharges

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Characterization of a dual‐segment cylindrical surface discharge

R. E. Beverly, III

J. Appl. Phys. 69, 3830–3834 (1991) https://doi.org/10.1063/1.348437

Abstract

View articletitled, Characterization of a dual‐segment cylindrical surface discharge

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Influence of partial ionization on the energy loss of fast ions in high‐Z material

Th. Peter; B. Kärcher

J. Appl. Phys. 69, 3835–3841 (1991) https://doi.org/10.1063/1.348438

Abstract

View articletitled, Influence of partial ionization on the energy loss of fast ions in high‐Z material

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Influence of excited states on the energy loss of fast ions in a hydrogen plasma

B. Kärcher; Th. Peter

J. Appl. Phys. 69, 3842–3848 (1991) https://doi.org/10.1063/1.348439

Abstract

View articletitled, Influence of excited states on the energy loss of fast ions in a hydrogen plasma

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Effect of laser annealing on electrical and optical properties of n‐mercury cadmium telluride

A. L. Dawar; Savita Roy; Tirlok Nath; Sanjay Tyagi; P. C. Mathur

J. Appl. Phys. 69, 3849–3852 (1991) https://doi.org/10.1063/1.348440

Abstract

View articletitled, Effect of laser annealing on electrical and optical properties of n‐mercury cadmium telluride

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Dynamics of picosecond laser‐induced density, temperature, and flow‐reorientation effects in the mesophases of liquid crystals

I. C. Khoo; R. G. Lindquist; R. R. Michael; R. J. Mansfield; P. LoPresti

J. Appl. Phys. 69, 3853–3859 (1991) https://doi.org/10.1063/1.348441

Abstract

View articletitled, Dynamics of picosecond laser‐induced density, temperature, and flow‐reorientation effects in the mesophases of liquid crystals

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Study of the influence of the phosphorus pressure on the preparation of nominally undoped semi‐insulating InP wafers

P. Kipfer; J. Lindolf; D. Hofmann; G. Müller

J. Appl. Phys. 69, 3860–3864 (1991) https://doi.org/10.1063/1.348442

Abstract

View articletitled, Study of the influence of the phosphorus pressure on the preparation of nominally undoped semi‐insulating InP wafers

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Analysis of the effects of oxygen migration on dislocation motion in silicon

Dimitris Maroudas; Robert A. Brown

J. Appl. Phys. 69, 3865–3877 (1991) https://doi.org/10.1063/1.348443

Abstract

View articletitled, Analysis of the effects of oxygen migration on dislocation motion in silicon

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Solubility enhancement of metallic impurities in silicon by rapid thermal annealing

Daniel Mathiot; Daniel Barbier

J. Appl. Phys. 69, 3878–3881 (1991) https://doi.org/10.1063/1.348444

Abstract

View articletitled, Solubility enhancement of metallic impurities in silicon by rapid thermal annealing

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Low‐power pulsed‐laser annealing of implanted GaAs

G. Vitali; M. Rossi; D. Karpuzov; H. Budinov; M. Kalitzova

J. Appl. Phys. 69, 3882–3885 (1991) https://doi.org/10.1063/1.348445

Abstract

View articletitled, Low‐power pulsed‐laser annealing of implanted GaAs

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Properties of curved x‐ray diffractors with stepped surfaces

D. B. Wittry; Songquan Sun

J. Appl. Phys. 69, 3886–3892 (1991) https://doi.org/10.1063/1.348446

Abstract

View articletitled, Properties of curved x‐ray diffractors with stepped surfaces

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Theoretical equation of state for aluminized nitromethane

Hermenzo D. Jones; Frank J. Zerilli

J. Appl. Phys. 69, 3893–3900 (1991) https://doi.org/10.1063/1.348447

Abstract

View articletitled, Theoretical equation of state for aluminized nitromethane

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Dopant diffusion in silicon in the presence of other dopants: A new predictive approach based on modeling boron and phosphorous diffusion in germanium‐rich regions of silicon

Sheldon Aronowitz

J. Appl. Phys. 69, 3901–3906 (1991) https://doi.org/10.1063/1.348448

Abstract

View articletitled, Dopant diffusion in silicon in the presence of other dopants: A new predictive approach based on modeling boron and phosphorous diffusion in germanium‐rich regions of silicon

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The thermal stability of Al/Ti‐Ta metallization on Si

M. Ben‐Tzur; M. Eizenberg; J. Greenblatt

J. Appl. Phys. 69, 3907–3914 (1991) https://doi.org/10.1063/1.348449

Abstract

View articletitled, The thermal stability of Al/Ti‐Ta metallization on Si

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Polycrystalline silicon carbide films deposited by low‐power radio‐frequency plasma decomposition of SiF₄‐CF₄‐H₂ gas mixtures

Gautam Ganguly; Subal C. De; Swati Ray; A. K. Barua

J. Appl. Phys. 69, 3915–3923 (1991) https://doi.org/10.1063/1.348450

Abstract

View articletitled, Polycrystalline silicon carbide films deposited by low‐power radio‐frequency plasma decomposition of SiF4‐CF4‐H2 gas mixtures

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Simultaneous Sb doping and formation of self‐aligned TiSi₂ by codeposition of Ti and Sb

X.‐H. Li; S. F. Gong; H. T. G. Hentzell; J. Hagel; A. Robertsson

J. Appl. Phys. 69, 3924–3928 (1991) https://doi.org/10.1063/1.348451

Abstract

View articletitled, Simultaneous Sb doping and formation of self‐aligned TiSi2 by codeposition of Ti and Sb

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Abnormal grain growth in aluminum alloy thin films

Hai P. Longworth; C. V. Thompson

J. Appl. Phys. 69, 3929–3940 (1991) https://doi.org/10.1063/1.348452

Abstract

View articletitled, Abnormal grain growth in aluminum alloy thin films

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Molecular‐beam epitaxial growth of InAs/GaAs superlattices on GaAs substrates and its application to a superlattice channel modulation‐doped field‐effect transistor

H. Toyoshima; K. Onda; E. Mizuki; N. Samoto; M. Kuzuhara; T. Itoh; A. Okamoto; T. Anan; T. Ichihashi

J. Appl. Phys. 69, 3941–3949 (1991) https://doi.org/10.1063/1.348454

Abstract

View articletitled, Molecular‐beam epitaxial growth of InAs/GaAs superlattices on GaAs substrates and its application to a superlattice channel modulation‐doped field‐effect transistor

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Determination of deep levels in gold‐doped polycrystalline silicon

Y. Fujita; K. Masuda‐Jindo

J. Appl. Phys. 69, 3950–3957 (1991) https://doi.org/10.1063/1.348455

Abstract

View articletitled, Determination of deep levels in gold‐doped polycrystalline silicon

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Thermally stimulated current studies of bismuth germanium oxide crystal

Takeshi Takamori; Dieter Just

J. Appl. Phys. 69, 3958–3961 (1991) https://doi.org/10.1063/1.348456

Abstract

View articletitled, Thermally stimulated current studies of bismuth germanium oxide crystal

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Boron ion implantation through Mo and Mo silicide layers for shallow junction formation

R. Angelucci; S. Solmi; A. Armigliato; S. Guerri; M. Merli; A. Poggi; R. Canteri

J. Appl. Phys. 69, 3962–3967 (1991) https://doi.org/10.1063/1.348457

Abstract

View articletitled, Boron ion implantation through Mo and Mo silicide layers for shallow junction formation

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Graded band‐gap ohmic contacts to n‐ and p‐type InP

R. Dutta; M. A. Shahid; P. J. Sakach

J. Appl. Phys. 69, 3968–3974 (1991) https://doi.org/10.1063/1.348458

Abstract

View articletitled, Graded band‐gap ohmic contacts to n‐ and p‐type InP

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Electronic transport analysis by electron‐beam‐induced current at variable energy of thin‐film amorphous semiconductors

S. Najar; B. Equer; N. Lakhoua

J. Appl. Phys. 69, 3975–3985 (1991) https://doi.org/10.1063/1.348459

Abstract

View articletitled, Electronic transport analysis by electron‐beam‐induced current at variable energy of thin‐film amorphous semiconductors

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Oxide field and thickness dependence of trap generation in 9–30 nm dry and dry/wet/dry oxides

Toshikazu Nishida; Scott E. Thompson

J. Appl. Phys. 69, 3986–3994 (1991) https://doi.org/10.1063/1.348914

Abstract

View articletitled, Oxide field and thickness dependence of trap generation in 9–30 nm dry and dry/wet/dry oxides

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Growth and electronic properties of thin Si₃N₄ films grown on Si in a nitrogen glow discharge

E. C. Paloura; J. Lagowski; H. C. Gatos

J. Appl. Phys. 69, 3995–4002 (1991) https://doi.org/10.1063/1.348460

Abstract

View articletitled, Growth and electronic properties of thin Si3N4 films grown on Si in a nitrogen glow discharge

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High‐field electron‐transport properties in an In_0.52Al_0.48As/In_0.53Ga_0.47As/In_0.52Al_0.48As double heterostructure

Naoteru Shigekawa; Tomofumi Furuta; Kunihiro Arai

J. Appl. Phys. 69, 4003–4010 (1991) https://doi.org/10.1063/1.348461

Abstract

View articletitled, High‐field electron‐transport properties in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double heterostructure

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Photocapacitance and photoconductance of Bi‐doped ZnO

J. C. Simpson; J. F. Cordaro

J. Appl. Phys. 69, 4011–4016 (1991) https://doi.org/10.1063/1.348435

Abstract

View articletitled, Photocapacitance and photoconductance of Bi‐doped ZnO

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Synthesis and properties of superconducting Bi₂Sr₂CaCu₂O_y films prepared by chemical diffusion

P. K. Ummat; Thomas W. Krause; W. R. Datars

J. Appl. Phys. 69, 4017–4020 (1991) https://doi.org/10.1063/1.348410

Abstract

View articletitled, Synthesis and properties of superconducting Bi2Sr2CaCu2Oy films prepared by chemical diffusion

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Magneto‐optical Kerr effect and perpendicular magnetic anisotropy of evaporated and sputtered Co/Pt multilayer structures

Ping He; William A. McGahan; John A. Woollam; F. Sequeda; T. McDaniel; H. Do

J. Appl. Phys. 69, 4021–4028 (1991) https://doi.org/10.1063/1.348411

Abstract

View articletitled, Magneto‐optical Kerr effect and perpendicular magnetic anisotropy of evaporated and sputtered Co/Pt multilayer structures

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Interaction of Bloch‐wall pairs in thin ferromagnetic films

J. P. Jakubovics

J. Appl. Phys. 69, 4029–4039 (1991) https://doi.org/10.1063/1.348412

Abstract

View articletitled, Interaction of Bloch‐wall pairs in thin ferromagnetic films

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Polarized neutron reflection used to characterize cobalt/copper multilayers

W. Schwarzacher; W. Allison; J. Penfold; C. Shackleton; C. D. England; W. R. Bennett; J. R. Dutcher; C. M. Falco

J. Appl. Phys. 69, 4040–4045 (1991) https://doi.org/10.1063/1.348413

Abstract

View articletitled, Polarized neutron reflection used to characterize cobalt/copper multilayers

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Low frequency and low temperature behavior of ZnO‐based varistor by ac impedance measurements

K. Al Abdullah; A. Bui; A. Loubiere

J. Appl. Phys. 69, 4046–4052 (1991) https://doi.org/10.1063/1.348414

Abstract

View articletitled, Low frequency and low temperature behavior of ZnO‐based varistor by ac impedance measurements

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Microwave dielectric loss studies on lithium‐zinc ferrites

R. Raman; V. R. K. Murthy; B. Viswanathan

J. Appl. Phys. 69, 4053–4055 (1991) https://doi.org/10.1063/1.348415

Abstract

View articletitled, Microwave dielectric loss studies on lithium‐zinc ferrites

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Excitonic photoluminescence line shape due to interfacial quality in quantum well structures in a magnetic field

Johngchul Lee; G. D. Sanders; K. K. Bajaj

J. Appl. Phys. 69, 4056–4059 (1991) https://doi.org/10.1063/1.348416

Abstract

View articletitled, Excitonic photoluminescence line shape due to interfacial quality in quantum well structures in a magnetic field

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The DX center in Si‐planar‐doped Al_xGa_1−xAs (x=0.32)

H. Mejri; A. Selmi; H. Maaref; J. C. Bourgoin

J. Appl. Phys. 69, 4060–4063 (1991) https://doi.org/10.1063/1.348417

Abstract

View articletitled, The DX center in Si‐planar‐doped AlxGa1−xAs (x=0.32)

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Raman study of longitudinal optical phonon‐plasmon coupling and disorder effects in heavily Be‐doped GaAs

A. Mlayah; R. Carles; G. Landa; E. Bedel; A. Muñoz‐Yagüe

J. Appl. Phys. 69, 4064–4070 (1991) https://doi.org/10.1063/1.348957

Abstract

View articletitled, Raman study of longitudinal optical phonon‐plasmon coupling and disorder effects in heavily Be‐doped GaAs

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Refractive index and electro‐optic effect in compressive and tensile strained quantum wells

J. Pamulapati; J. P. Loehr; J. Singh; P. K. Bhattacharya; M. J. Ludowise

J. Appl. Phys. 69, 4071–4074 (1991) https://doi.org/10.1063/1.348418

Abstract

View articletitled, Refractive index and electro‐optic effect in compressive and tensile strained quantum wells

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Photoreflectance studies of GaAs containing a Si‐δ‐doping layer

Weimin Zhou; Clive H. Perry; Ling Ma; Kyu‐Seok Lee; John M. Worlock; Artur Zrenner; F. Koch; K. Ploog

J. Appl. Phys. 69, 4075–4079 (1991) https://doi.org/10.1063/1.348419

Abstract

View articletitled, Photoreflectance studies of GaAs containing a Si‐δ‐doping layer

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Deformation‐induced defects in GaAs

S. Dannefaer; P. Mascher; D. Kerr

J. Appl. Phys. 69, 4080–4091 (1991) https://doi.org/10.1063/1.348420

Abstract

View articletitled, Deformation‐induced defects in GaAs

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Study of the ablation threshold of polyimide (Kapton H) utilizing double‐pulsed XeCl excimer laser radiation

S. Mihailov; W. Duley

J. Appl. Phys. 69, 4092–4102 (1991) https://doi.org/10.1063/1.348421

Abstract

View articletitled, Study of the ablation threshold of polyimide (Kapton H) utilizing double‐pulsed XeCl excimer laser radiation

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Synchrotron‐radiation‐induced deposition of boron and boron carbide films from boranes and carboranes: Decaborane

F. Keith Perkins; R. A. Rosenberg; Sunwoo Lee; P. A. Dowben

J. Appl. Phys. 69, 4103–4109 (1991) https://doi.org/10.1063/1.348422

Abstract

View articletitled, Synchrotron‐radiation‐induced deposition of boron and boron carbide films from boranes and carboranes: Decaborane

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Monte Carlo simulation of laser induced chemical vapor deposition

Yehuda Zeiri; Uzi Atzmony; Joseph Bloch; Robert R. Lucchese

J. Appl. Phys. 69, 4110–4115 (1991) https://doi.org/10.1063/1.348423

Abstract

View articletitled, Monte Carlo simulation of laser induced chemical vapor deposition

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Advantages of two‐step annealing for 1‐MeV arsenic‐ion‐implanted layers in silicon

T. Inada; H. Iwasaki; Y. Koyama

J. Appl. Phys. 69, 4116–4122 (1991) https://doi.org/10.1063/1.348424

Abstract

View articletitled, Advantages of two‐step annealing for 1‐MeV arsenic‐ion‐implanted layers in silicon

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Influence of DX centers and surface states on δ‐doped high‐electron‐mobility transistor performance

H. Tian; K. W. Kim; M. A. Littlejohn

J. Appl. Phys. 69, 4123–4128 (1991) https://doi.org/10.1063/1.348425

Abstract

View articletitled, Influence of DX centers and surface states on δ‐doped high‐electron‐mobility transistor performance

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Comment on ‘‘High‐detectivity GaAs quantum‐well infrared detectors with peak responsivity at 8.2 μm’’

W. A. Beck

J. Appl. Phys. 69, 4129 (1991) https://doi.org/10.1063/1.348426

Abstract

View articletitled, Comment on ‘‘High‐detectivity GaAs quantum‐well infrared detectors with peak responsivity at 8.2 μm’’

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Reply to ‘‘Comment on ‘High‐detectivity GaAs quantum‐well infrared detectors with peak responsivity at 8.2 μm’ ’’

B. K. Janousek; M. J. Daugherty; W. L. Bloss; R. Lacoe; M. J. O’Loughlin; H. Kanter; F. J. De Luccia; L. E. Perry

J. Appl. Phys. 69, 4130–4131 (1991) https://doi.org/10.1063/1.348427

Abstract

View articletitled, Reply to ‘‘Comment on ‘High‐detectivity GaAs quantum‐well infrared detectors with peak responsivity at 8.2 μm’ ’’

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On the intrinsic bistability in resonant tunneling structures: Observation of area dependence of hysteresis

J. G. Chen; C. H. Yang; R. A. Wilson

J. Appl. Phys. 69, 4132–4134 (1991) https://doi.org/10.1063/1.348428

Abstract

View articletitled, On the intrinsic bistability in resonant tunneling structures: Observation of area dependence of hysteresis

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Plasma‐grooved, buried contact silicon solar cells

C. M. Chong; K. E. Davies; S. R. Wenham; M. Gross; C. M. Horwitz; M. A. Green

J. Appl. Phys. 69, 4135–4136 (1991) https://doi.org/10.1063/1.348429

Abstract

View articletitled, Plasma‐grooved, buried contact silicon solar cells

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On the proximity effect between normal metals and cuprate superconductors

G. Deutscher; R. W. Simon

J. Appl. Phys. 69, 4137–4139 (1991) https://doi.org/10.1063/1.348430

Abstract

View articletitled, On the proximity effect between normal metals and cuprate superconductors

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Point defect concentrations in InGaAsP quaternary alloys

Masaya Ichimura; Takao Wada

J. Appl. Phys. 69, 4140–4142 (1991) https://doi.org/10.1063/1.348431

Abstract

View articletitled, Point defect concentrations in InGaAsP quaternary alloys

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Measurement of kappa in high T_c superconductors

R. Karim; H. How; C. Vittoria; A. Widom

J. Appl. Phys. 69, 4143–4145 (1991) https://doi.org/10.1063/1.348432

Abstract

View articletitled, Measurement of kappa in high Tc superconductors

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Determination of the coherence length in high‐mobility semiconductor‐coupled Josephson weak links

A. W. Kleinsasser

J. Appl. Phys. 69, 4146–4148 (1991) https://doi.org/10.1063/1.348433

Abstract

View articletitled, Determination of the coherence length in high‐mobility semiconductor‐coupled Josephson weak links

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Electrical characterization of p‐type ZnSe:Li epilayers grown on p⁺‐GaAs by molecular‐beam epitaxy

T. Marshall; D. A. Cammack

J. Appl. Phys. 69, 4149–4151 (1991) https://doi.org/10.1063/1.348434

Abstract

View articletitled, Electrical characterization of p‐type ZnSe:Li epilayers grown on p+‐GaAs by molecular‐beam epitaxy

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Erratum:‘‘Focused ion beam stimulated deposition of aluminum from trialkylamine alanes’’ [J. Appl. Phys. 68, 4820 (1990)]

M. E. Gross; L. R. Harriott; R. L. Opila, Jr.

J. Appl. Phys. 69, 4152 (1991) https://doi.org/10.1063/1.348978

View articletitled, Erratum:‘‘Focused ion beam stimulated deposition of aluminum from trialkylamine alanes’’ [J. Appl. Phys. 68, 4820 (1990)]

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Erratum: ‘‘Analytical solution for minority‐carrier transport in heavily doped semiconductors with position‐dependent band structures’’ [J. Appl. Phys. 68, 1710 (1990)]

S. Noor Mohammad

J. Appl. Phys. 69, 4153 (1991) https://doi.org/10.1063/1.348979

View articletitled, Erratum: ‘‘Analytical solution for minority‐carrier transport in heavily doped semiconductors with position‐dependent band structures’’ [J. Appl. Phys. 68, 1710 (1990)]

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