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Associative ionization and dissociative recombination in mercury vapor
J. Appl. Phys. 69, 563–568 (1991)
https://doi.org/10.1063/1.347386
Directional asymmetries due to write‐laser mode hopping during optical recording
J. Appl. Phys. 69, 569–573 (1991)
https://doi.org/10.1063/1.347387
Temperature dependence of a 2.94‐μm YAG:Er laser and population of the laser levels
J. Appl. Phys. 69, 581–583 (1991)
https://doi.org/10.1063/1.347389
A numerical data analysis of thickness modes in arbitrary coupling piezoelectric plates
J. Appl. Phys. 69, 584–591 (1991)
https://doi.org/10.1063/1.347390
Electromechanical coupling in thickness‐multimode piezoelectric resonators and transducers
J. Appl. Phys. 69, 592–596 (1991)
https://doi.org/10.1063/1.347391
Heat transfer from a wire to hexane in a nonuniform electric field
J. Appl. Phys. 69, 606–609 (1991)
https://doi.org/10.1063/1.347393
Observations of soft x‐ray production in the speed 2 plasma focus
J. Appl. Phys. 69, 613–617 (1991)
https://doi.org/10.1063/1.347394
Second generation, high‐power, fundamental mode large‐orbit gyrotron experiments
J. Appl. Phys. 69, 627–631 (1991)
https://doi.org/10.1063/1.347342
Ellipsometric study of a‐Si:H thin films deposited by square wave modulated rf glow discharge
J. Appl. Phys. 69, 632–638 (1991)
https://doi.org/10.1063/1.347343
Wire‐guided transport of intense ion beams
J. Appl. Phys. 69, 639–655 (1991)
https://doi.org/10.1063/1.347344
Modeling inductively coupled plasmas: The coil current boundary condition
J. Appl. Phys. 69, 656–661 (1991)
https://doi.org/10.1063/1.347345
Early stage evolution kinetics of the polysilicon/single‐crystal silicon interfacial oxide upon annealing
J. Appl. Phys. 69, 662–667 (1991)
https://doi.org/10.1063/1.347346
Frequency modulation detection using high‐Q cantilevers for enhanced force microscope sensitivity
J. Appl. Phys. 69, 668–673 (1991)
https://doi.org/10.1063/1.347347
Energy‐loss probabilities for electrons, positrons, and protons in condensed matter
J. Appl. Phys. 69, 674–678 (1991)
https://doi.org/10.1063/1.347348
Optically detected magnetic resonance studies of neutron‐transmutation‐doped GaP
J. Appl. Phys. 69, 689–694 (1991)
https://doi.org/10.1063/1.347350
Magnetron reactive ion etching of GaAs: Residual damage study
J. Appl. Phys. 69, 695–697 (1991)
https://doi.org/10.1063/1.347351
Anelastic relaxations and molecular motions in polymeric electrolytes
J. Appl. Phys. 69, 704–709 (1991)
https://doi.org/10.1063/1.347353
The role of surface tension in the growth of strained quantum wire arraysa)
J. Appl. Phys. 69, 717–721 (1991)
https://doi.org/10.1063/1.347355
Precipitation of arsenic diffused into silicon from a TiSi2 source
J. Appl. Phys. 69, 726–731 (1991)
https://doi.org/10.1063/1.347357
Growth and characterization of GaAs on Si by vacuum chemical epitaxy
J. Appl. Phys. 69, 732–735 (1991)
https://doi.org/10.1063/1.347358
Mechanically and thermally stable Si‐Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C
M. L. Green; B. E. Weir; D. Brasen; Y. F. Hsieh; G. Higashi; A. Feygenson; L. C. Feldman; R. L. Headrick
J. Appl. Phys. 69, 745–751 (1991)
https://doi.org/10.1063/1.347360
Quantum‐well structures of InAlP/InGaP grown by gas‐source molecular‐beam epitaxy
J. Appl. Phys. 69, 752–756 (1991)
https://doi.org/10.1063/1.348921
Metalorganic chemical vapor deposition of BaTiO3 thin films
J. Appl. Phys. 69, 767–772 (1991)
https://doi.org/10.1063/1.347362
Growth of epitaxial Ag/Si films by the partially ionized beam deposition technique
J. Appl. Phys. 69, 773–777 (1991)
https://doi.org/10.1063/1.347363
Structure of interfaces in a‐Si:H/a‐SiNx:H superlattices
J. Appl. Phys. 69, 778–785 (1991)
https://doi.org/10.1063/1.347364
Dislocation formation related with high oxygen dose implantation on silicon
J. Appl. Phys. 69, 793–802 (1991)
https://doi.org/10.1063/1.347366
Fluorine‐containing species on the hydrofluoric acid etched silicon single‐crystal surface
J. Appl. Phys. 69, 803–807 (1991)
https://doi.org/10.1063/1.347367
Atomic scale structure of microtwins in single crystal Si grown by lateral solid phase epitaxy
J. Appl. Phys. 69, 808–811 (1991)
https://doi.org/10.1063/1.347368
Interfacial‐band discontinuities for strained layers of InxGa1−xAs grown on (100) GaAs
J. Appl. Phys. 69, 812–815 (1991)
https://doi.org/10.1063/1.347369
Hole drift mobility and chemical structure of charge‐transporting hydrazone compounds
J. Appl. Phys. 69, 821–826 (1991)
https://doi.org/10.1063/1.347316
Sidegating characteristics of AlGaAs/GaAs heterostructures with varied AlGaAs spacer layers
J. Appl. Phys. 69, 830–835 (1991)
https://doi.org/10.1063/1.347317
The Auger recombination rate is larger in a GaSb quantum well than in bulk GaSb
J. Appl. Phys. 69, 836–840 (1991)
https://doi.org/10.1063/1.347318
Magnetic field‐induced suppression of acoustic phonon emission in a superlattice
J. Appl. Phys. 69, 841–845 (1991)
https://doi.org/10.1063/1.347319
Electrical transport and optical properties of zirconium nitride/aluminum nitride multilayers
J. Appl. Phys. 69, 846–849 (1991)
https://doi.org/10.1063/1.347320
Influence of Fermi‐level pinning on barrier height inhomogeneity in PtSi/p‐Si Schottky contacts
J. Appl. Phys. 69, 850–853 (1991)
https://doi.org/10.1063/1.347321
Possibility of ac applications of high‐Tc superconductors in a flux‐flow state
J. Appl. Phys. 69, 854–858 (1991)
https://doi.org/10.1063/1.347322
Anomalous behavior in transport critical current density of YBa2Cu3O7−x and YBa2Cu3O7−x‐Ag bulk samples
J. Appl. Phys. 69, 863–866 (1991)
https://doi.org/10.1063/1.347324
Millimeter wave surface resistance of grain‐aligned Y1Ba2Cu3Ox bulk material
J. Appl. Phys. 69, 874–879 (1991)
https://doi.org/10.1063/1.347326
Kerr effect from Pt/Co superlattices and the role of the magneto‐optic activity of Pt
J. Appl. Phys. 69, 880–885 (1991)
https://doi.org/10.1063/1.347327
Magnetocrystalline anisotropy and magnetostriction of FeRuGaSi single crystals: SOFMAX
J. Appl. Phys. 69, 886–890 (1991)
https://doi.org/10.1063/1.347328
Interface influence on the high‐field conduction phenomena of a thin dielectric liquid layer
J. Appl. Phys. 69, 891–895 (1991)
https://doi.org/10.1063/1.347329
Origin of the first‐order phase change at the Curie temperature in KNbO3
J. Appl. Phys. 69, 896–898 (1991)
https://doi.org/10.1063/1.347330
Dielectric properties of polypyrrole doped with tosylate anion in the far infrared and microwave
J. Appl. Phys. 69, 899–905 (1991)
https://doi.org/10.1063/1.347331
An analysis of the two electron satellite spectrum of GaAs in high magnetic fields
J. Appl. Phys. 69, 906–912 (1991)
https://doi.org/10.1063/1.347332
Refractive index gratings in rare‐earth‐doped alkaline earth glasses
J. Appl. Phys. 69, 913–917 (1991)
https://doi.org/10.1063/1.347333
Time‐resolved spectroscopic reflection measurements in shock‐compressed materials
J. Appl. Phys. 69, 918–928 (1991)
https://doi.org/10.1063/1.348920
Interferometric determination of optical anisotropy in fibers 1‐ homogeneous fibers
J. Appl. Phys. 69, 929–932 (1991)
https://doi.org/10.1063/1.347334
Accurate methods for simulating electroreflectance and photoreflectance spectra of GaAs
J. Appl. Phys. 69, 943–948 (1991)
https://doi.org/10.1063/1.347337
Investigation of interfacial roughness of InxGa1−xAs epitaxial layers on GaAs and InP substrates by soft x‐ray reflectivity
A. Krol; H. Resat; C. J. Sher; S. C. Woronick; W. Ng; Y. H. Kao; T. L. Cole; A. K. Green; C. K. Lowe‐Ma; T.‐W. Nee; Victor Rehn
J. Appl. Phys. 69, 949–953 (1991)
https://doi.org/10.1063/1.347338
Measurement of the electrogyratory coefficient in photorefractive Bi12SiO20 crystal
J. Appl. Phys. 69, 954–958 (1991)
https://doi.org/10.1063/1.347339
Quantitative assessment of Be acceptors in GaAs by local vibrational mode spectroscopy
J. Appl. Phys. 69, 971–974 (1991)
https://doi.org/10.1063/1.347289
Time‐dependent electron emission from ferroelectrics by external pulsed electric fields
J. Appl. Phys. 69, 975–982 (1991)
https://doi.org/10.1063/1.347290
A review of some aspects of ternary metal‐metal‐Si and metal‐B‐Si systems
J. Appl. Phys. 69, 994–999 (1991)
https://doi.org/10.1063/1.347292
Kinetics of laser‐photochemical deposition by gas‐phase dissociation
J. Appl. Phys. 69, 1000–1007 (1991)
https://doi.org/10.1063/1.347414
Gas source molecular‐beam epitaxy of Si and SiGe using Si2H6 and GeH4
J. Appl. Phys. 69, 1008–1012 (1991)
https://doi.org/10.1063/1.347415
Study of back reflectors for amorphous silicon alloy solar cell application
J. Appl. Phys. 69, 1030–1035 (1991)
https://doi.org/10.1063/1.347418
Aging of zinc oxide varistors subjected to partial discharges in sulfur hexafluoride
J. Appl. Phys. 69, 1036–1040 (1991)
https://doi.org/10.1063/1.347419
Occupation dynamics of trap states in an a‐Si:H thin‐film transistor
J. Appl. Phys. 69, 1041–1046 (1991)
https://doi.org/10.1063/1.347420
A high‐gain, high‐bandwidth In0.53Ga0.47As/InP heterojunction phototransistor for optical communications
J. Appl. Phys. 69, 1052–1062 (1991)
https://doi.org/10.1063/1.347371
Influence of the potential spike on heterostructure‐emitter bipolar transistor
J. Appl. Phys. 69, 1063–1066 (1991)
https://doi.org/10.1063/1.347372
Reverse current‐voltage characteristic of almost ideal silicon p‐n junctions
J. Appl. Phys. 69, 1071–1080 (1991)
https://doi.org/10.1063/1.347374
Surface and bulk leakage currents in transverse junction stripe lasers
J. Appl. Phys. 69, 1081–1090 (1991)
https://doi.org/10.1063/1.347375
The effects of pore‐scale fluid distribution on the physical properties of partially saturated tight sandstones
J. Appl. Phys. 69, 1091–1098 (1991)
https://doi.org/10.1063/1.347376
Use of thermal energy for surface contact potential gas detection
J. Appl. Phys. 69, 1102–1103 (1991)
https://doi.org/10.1063/1.347378
Paramagnetic resonance and susceptibility of ilmenite, FeTiO3 crystal
J. Appl. Phys. 69, 1104–1106 (1991)
https://doi.org/10.1063/1.347379
Properties of the ablation process for excimer laser ablation of Y1Ba2Cu3O7
J. Appl. Phys. 69, 1107–1109 (1991)
https://doi.org/10.1063/1.347380
Critical current enhancement in proton‐irradiated Tl2CaBa2Cu2O8 films
B. D. Weaver; M. E. Reeves; D. B. Chrisey; G. P. Summers; W. L. Olson; M. M. Eddy; T. W. James; E. J. Smith
J. Appl. Phys. 69, 1119–1121 (1991)
https://doi.org/10.1063/1.347384
Improved AlGaAs/GaAs double‐barrier resonant tunneling structures using two‐dimensional source electrons
J. Appl. Phys. 69, 1122–1123 (1991)
https://doi.org/10.1063/1.347385
An analysis of charge states for local vibrational modes by oxygen defects in semi‐insulating GaAs
J. Appl. Phys. 69, 1124–1127 (1991)
https://doi.org/10.1063/1.348983
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Selecting alternative metals for advanced interconnects
Jean-Philippe Soulié, Kiroubanand Sankaran, et al.
Machine learning for thermal transport
Ruiqiang Guo, Bing-Yang Cao, et al.