Skip Nav Destination
Issues
Electromagnetic fields for an irregularly shaped, near‐spherical particle illuminated by a focused laser beam
J. Appl. Phys. 69, 7973–7986 (1991)
https://doi.org/10.1063/1.347493
The electromagnetic field of a horizontal electric dipole in the presence of a three‐layered region
J. Appl. Phys. 69, 7987–7995 (1991)
https://doi.org/10.1063/1.347494
Cl2 reactive ion etching mechanisms studied by in situ determination of ion energy and ion flux
J. Appl. Phys. 69, 7996–8004 (1991)
https://doi.org/10.1063/1.347495
Pump polarization effects in cw dye lasers
J. Appl. Phys. 69, 8005–8010 (1991)
https://doi.org/10.1063/1.347496
Investigation of the thermal dissociation of PH3 and NH3 using quadrupole mass spectrometry
J. Appl. Phys. 69, 8025–8030 (1991)
https://doi.org/10.1063/1.347447
Movement of phase boundaries of metals subjected to surface periodic energy pulses
J. Appl. Phys. 69, 8031–8036 (1991)
https://doi.org/10.1063/1.347448
Mathematical model of internal temperature profile of GaAs during rapid thermal annealing
J. Appl. Phys. 69, 8037–8041 (1991)
https://doi.org/10.1063/1.347449
Investigation of Se+‐implanted GaAs layers by temperature‐dependent dechanneling
J. Appl. Phys. 69, 8072–8075 (1991)
https://doi.org/10.1063/1.347455
Mechanisms of thermal stress relaxation and stress‐induced voiding in narrow aluminum‐based metallizations
J. Appl. Phys. 69, 8083–8091 (1991)
https://doi.org/10.1063/1.347457
Study of point defect clusters produced by BF+2 implantation in silicon single crystals
J. Appl. Phys. 69, 8092–8095 (1991)
https://doi.org/10.1063/1.347458
X‐ray diffuse scattering from a nitrogen‐implanted niobium film
J. Appl. Phys. 69, 8104–8110 (1991)
https://doi.org/10.1063/1.347460
The thermal conductivity of isotopically enriched polycrystalline diamond films
J. Appl. Phys. 69, 8122–8125 (1991)
https://doi.org/10.1063/1.347463
Li and Sb doping effects on the growth behavior of ZnS on GaP substrates
J. Appl. Phys. 69, 8126–8129 (1991)
https://doi.org/10.1063/1.347464
Characterization of epitaxial yttria‐stabilized zirconia/Si interface by ion beam channeling
J. Appl. Phys. 69, 8130–8132 (1991)
https://doi.org/10.1063/1.347465
Simulation of transient boron diffusion during rapid thermal annealing in silicon
J. Appl. Phys. 69, 8133–8138 (1991)
https://doi.org/10.1063/1.347466
Defect‐free growth of AlxGa1−xAs by liquid‐phase epitaxy on V‐grooved (001) GaAs substrates
J. Appl. Phys. 69, 8154–8157 (1991)
https://doi.org/10.1063/1.347469
Heteroepitaxy and characterization of Ge‐rich SiGe alloys on GaAs
J. Appl. Phys. 69, 8164–8167 (1991)
https://doi.org/10.1063/1.347471
An Auger and electron energy‐loss study of reactions at the Ti‐SiO2 interface
J. Appl. Phys. 69, 8168–8176 (1991)
https://doi.org/10.1063/1.347472
Comparison of deep centers in semi‐insulating liquid‐encapsulated Czochralski and vertical‐gradient freeze GaAs
J. Appl. Phys. 69, 8177–8182 (1991)
https://doi.org/10.1063/1.347421
Interaction of gold‐related and irradiation‐induced defects in silicon
J. Appl. Phys. 69, 8205–8209 (1991)
https://doi.org/10.1063/1.347423
Capacitance‐voltage characteristics of grain boundaries in cast polycrystalline silicon
J. Appl. Phys. 69, 8217–8221 (1991)
https://doi.org/10.1063/1.347425
Extremely low non‐alloyed specific contact resistance ρc (10−8 Ω cm2) to metalorganic molecular beam epitaxy grown super heavily C‐doped (1021 cm−3) p++GaAs
T. Usagawa; M. Kobayashi; T. Mishima; P. D. Rabinzohn; A. Ihara; M. Kawata; T. Yamada; E. Tokumitsu; M. Konagai; K. Takahashi
J. Appl. Phys. 69, 8227–8232 (1991)
https://doi.org/10.1063/1.347427
Uniaxial stress effects on the AlAs/GaAs double‐barrier heterostructures
J. Appl. Phys. 69, 8241–8246 (1991)
https://doi.org/10.1063/1.347430
Very high critical current in a long YBa2Cu3O7−δ single crystalline rod
J. Appl. Phys. 69, 8261–8264 (1991)
https://doi.org/10.1063/1.347433
Influence of the sample geometry on critical current density of high Tc granular superconductors
J. Appl. Phys. 69, 8265–8267 (1991)
https://doi.org/10.1063/1.348924
The effects of processing sequences on the microwave surface resistance of TlCaBaCuO
J. Appl. Phys. 69, 8268–8271 (1991)
https://doi.org/10.1063/1.347434
Spectroscopic ellipsometry studies of YBa2Cu3O7−δ deposited on SrTiO3
J. Appl. Phys. 69, 8272–8276 (1991)
https://doi.org/10.1063/1.347435
Soft magnetic properties and film structures of Fe‐C/Ta multilayered films
J. Appl. Phys. 69, 8285–8290 (1991)
https://doi.org/10.1063/1.347437
Characterization of epitaxial thin GaP films on GaAs by Raman scattering
J. Appl. Phys. 69, 8304–8309 (1991)
https://doi.org/10.1063/1.347440
Low‐temperature epitaxial growth of cerium dioxide layers on (111) silicon substrates
J. Appl. Phys. 69, 8313–8315 (1991)
https://doi.org/10.1063/1.347442
The growth kinetics of diamond films deposited by hot‐filament chemical vapor deposition
J. Appl. Phys. 69, 8329–8335 (1991)
https://doi.org/10.1063/1.347445
Modeling of epitaxial silicon growth from the SiH2Cl2‐H2‐HCl system in an rf‐heated pancake reactor
J. Appl. Phys. 69, 8336–8345 (1991)
https://doi.org/10.1063/1.347446
Facet oxidation of InGaAs/GaAs strained quantum‐well lasers
J. Appl. Phys. 69, 8346–8351 (1991)
https://doi.org/10.1063/1.347396
Preparation and electrical properties of MOCVD‐deposited PZT thin films
J. Appl. Phys. 69, 8352–8357 (1991)
https://doi.org/10.1063/1.347397
Growth of ceramic thin films on Si(100) using an in situ laser deposition technique
J. Appl. Phys. 69, 8358–8362 (1991)
https://doi.org/10.1063/1.347398
Grain growth processes in ZnO varistors with various valence states of manganese and cobalt
J. Appl. Phys. 69, 8363–8367 (1991)
https://doi.org/10.1063/1.347399
Study on the sensing mechanism of tin oxide flammable gas sensors using the Hall effect
J. Appl. Phys. 69, 8368–8374 (1991)
https://doi.org/10.1063/1.347400
Characterization of ZnO varistor degradation using lifetime positron‐annihilation spectroscopy
J. Appl. Phys. 69, 8380–8386 (1991)
https://doi.org/10.1063/1.347402
Resonant level lifetime in GaAs‐AlAs double‐barrier structures including Γ‐X mixing
J. Appl. Phys. 69, 8387–8391 (1991)
https://doi.org/10.1063/1.348923
Metal‐oxide semiconductor transistors fabricated on Si/Al2O3/Si structures
J. Appl. Phys. 69, 8408–8410 (1991)
https://doi.org/10.1063/1.347407
Zn drops at a Si surface measured by the refracted x‐ray fluorescence method
J. Appl. Phys. 69, 8420–8422 (1991)
https://doi.org/10.1063/1.347411
Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β‐SiC
J. Appl. Phys. 69, 8423–8425 (1991)
https://doi.org/10.1063/1.347412
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.