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Volume 68, Issue 7
1 October 1990
Journal of Applied Physics Cover Image for Volume 68, Issue 7
All Issues
ISSN 0021-8979
EISSN 1089-7550
Transport mean free path tabulated for the multiple elastic scattering of electrons and positrons at energies ≤20 MeV
D. Liljequist; M. Ismail; F. Salvat; R. Mayol; J. D. Martinez
J. Appl. Phys. 68, 3061–3065 (1990) https://doi.org/10.1063/1.346399
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Calculations of Mott scattering cross section
Zbigniew Czyżewski; Danny O’Neill MacCallum; Alton Romig; David C. Joy
J. Appl. Phys. 68, 3066–3072 (1990) https://doi.org/10.1063/1.346400
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A master‐oscillator‐driven phase‐locked vircator array
H. Sze; D. Price; B. Harteneck; N. Cooksey
J. Appl. Phys. 68, 3073–3079 (1990) https://doi.org/10.1063/1.346401
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Eddy‐current induction in a uniaxially anisotropic plate
S. K. Burke
J. Appl. Phys. 68, 3080–3090 (1990) https://doi.org/10.1063/1.347171
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On the dynamics of a laser‐produced Be plasma and its implication for a Be/Ne photopumped x‐ray laser scheme
P. C. Filbert; D. A. Kohler
J. Appl. Phys. 68, 3091–3098 (1990) https://doi.org/10.1063/1.346402
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Holographic recording in photorefractive crystals with simultaneous electron‐hole transport and two active centers
S. Zhivkova; M. Miteva
J. Appl. Phys. 68, 3099–3103 (1990) https://doi.org/10.1063/1.346403
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Fringe‐locked running hologram and multiple photoactive species in Bi12TiO20
Jaime Frejlich
J. Appl. Phys. 68, 3104–3109 (1990) https://doi.org/10.1063/1.346404
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Tungsten metallization for stable and self‐aligned InP‐based laser devices
A. Katz; S. J. Pearton; M. Geva
J. Appl. Phys. 68, 3110–3113 (1990) https://doi.org/10.1063/1.346405
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Theory of lasers with intracavity optical mixing
H. Souma; C. Horie
J. Appl. Phys. 68, 3114–3121 (1990) https://doi.org/10.1063/1.346406
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The use of Einstein’s coefficients to predict the theory of operation of a semiconductor laser
G. W. Taylor
J. Appl. Phys. 68, 3122–3139 (1990) https://doi.org/10.1063/1.346407
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Laser‐plasma generation of currents along a conductive target
A. V. Kabashin; V. I. Konov; P. I. Nikitin; A. M. Prokhorov; N. Konjević; L. Vikor
J. Appl. Phys. 68, 3140–3146 (1990) https://doi.org/10.1063/1.346408
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Cold barium cathode: glow‐discharge characteristics in rare gases and application to gas‐discharge displays
Shigeo Mikoshiba; Shin‐ichi Shinada
J. Appl. Phys. 68, 3147–3152 (1990) https://doi.org/10.1063/1.346409
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Study of voltage fluctuations in a low‐current electric arc
S. Vacquié; B. Rahhaoui; A. M. Rahal
J. Appl. Phys. 68, 3153–3156 (1990) https://doi.org/10.1063/1.346416
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Probe measurements of the space potential in a radio frequency discharge
V. A. Godyak; R. B. Piejak
J. Appl. Phys. 68, 3157–3162 (1990) https://doi.org/10.1063/1.346389
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On the origin of misfit dislocations in InGaAs/GaAs strained layers
R. H. Dixon; P. J. Goodhew
J. Appl. Phys. 68, 3163–3168 (1990) https://doi.org/10.1063/1.346390
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Low‐temperature dynamic depth profile measurements of implanted deuterium in nickel: Precipitation of nickel deuteride
O. Petitpierre; W. Möller; B. M. U. Scherzer
J. Appl. Phys. 68, 3169–3177 (1990) https://doi.org/10.1063/1.346391
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In situ small‐angle x‐ray scattering from coal during fluid extraction
Scott Nemmers; David K. Horne; Harold D. Bale
J. Appl. Phys. 68, 3178–3186 (1990) https://doi.org/10.1063/1.346366
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Depth profiles of Xe ions at energies from 50 to 500 keV in ladderlike polyphenylsilsesquioxane
Ke‐Ming Wang; Ji‐Tian Liu; Bo‐Rong Shi; Xiang‐Dong Liu; Qing‐Tai Zhao; Mu‐Bing Huang; Shu‐Mei Deng
J. Appl. Phys. 68, 3187–3190 (1990) https://doi.org/10.1063/1.346367
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Distributions of implanted Fe ions in quartz crystal and silicon
Ke‐Ming Wang; Bo‐Rong Shi; Hai‐Yan Guo; Ji‐Tian Liu; Qing‐Tai Zhao; Xiang‐Dong Liu; Yun‐Tao Wang
J. Appl. Phys. 68, 3191–3193 (1990) https://doi.org/10.1063/1.346368
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An electron diffraction study of amorphous hydrogenated germanium‐carbon thin films
S. B. White; D. R. McKenzie
J. Appl. Phys. 68, 3194–3197 (1990) https://doi.org/10.1063/1.346369
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Swelling and microcracking of boron carbide subjected to fast neutron irradiations
T. Stoto; N. Housseau; L. Zuppiroli; B. Kryger
J. Appl. Phys. 68, 3198–3206 (1990) https://doi.org/10.1063/1.346370
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Calcium gallioaluminate glasses
James E. Shelby; Rita M. Slilaty
J. Appl. Phys. 68, 3207–3211 (1990) https://doi.org/10.1063/1.346371
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Photoluminescence study of Li‐ and Na‐implanted ZnSe epitaxial layers grown by atmospheric pressure metalorganic vapor‐phase epitaxy
Tokuo Yodo; Kazuhiro Ueda; Kenji Morio; Ken Yamashita; Shuhei Tanaka
J. Appl. Phys. 68, 3212–3220 (1990) https://doi.org/10.1063/1.346372
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A broken‐bond model for grain boundaries in face‐centered cubic metals
D. Wolf
J. Appl. Phys. 68, 3221–3236 (1990) https://doi.org/10.1063/1.346373
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Type conversion by high‐energy particles in Hg1−xCdxTe compounds
C. Blanchard; J. Favre; J. F. Barbot; J. C. Desoyer; M. Toulemonde; M. Konczykowski; D. Le Scoul; J. L. Dessus
J. Appl. Phys. 68, 3237–3242 (1990) https://doi.org/10.1063/1.346374
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Pressure and temperature dependence of the first‐order Raman mode of diamond
A. Tardieu; F. Cansell; J. P. Petitet
J. Appl. Phys. 68, 3243–3245 (1990) https://doi.org/10.1063/1.346375
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Epitaxial growth of bcc‐Eu/Yb superlattices
Atsushi Maeda; Tohru Satake; Toshinari Fujimori; Haruo Kuroda
J. Appl. Phys. 68, 3246–3249 (1990) https://doi.org/10.1063/1.347153
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High‐concentration boron diffusion in silicon: Simulation of the precipitation phenomena
S. Solmi; E. Landi; F. Baruffaldi
J. Appl. Phys. 68, 3250–3258 (1990) https://doi.org/10.1063/1.346376
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Kinetic description of the transition from a one‐phase to a two‐phase growth regime in Al/Pd lateral diffusion couples
B. Blanpain; J. W. Mayer; Joyce C. Liu; K. N. Tu
J. Appl. Phys. 68, 3259–3267 (1990) https://doi.org/10.1063/1.346377
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In situ measurements of hydrogen motion and bonding in silicon
C. H. Seager; R. A. Anderson; D. K. Brice
J. Appl. Phys. 68, 3268–3284 (1990) https://doi.org/10.1063/1.346378
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Effective thermal conductivity of binary dispersed composites over wide ranges of volume fraction, temperature, and pressure
Björn Håkansson; Russell G. Ross
J. Appl. Phys. 68, 3285–3292 (1990) https://doi.org/10.1063/1.346379
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Dopant diffusion control in silicon using germanium
Sheldon Aronowitz
J. Appl. Phys. 68, 3293–3297 (1990) https://doi.org/10.1063/1.347170
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Defect microstructure in laser‐assisted modulation molecular‐beam epitaxy GaAs on (100) silicon
A. Christou; J. Stoemenos; N. Flevaris; Ph. Komninou; A. Georgakilas
J. Appl. Phys. 68, 3298–3302 (1990) https://doi.org/10.1063/1.346380
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Raman investigations of diamond films prepared by combustion flames
K. S. Harshavardhan; M. N. Vijayaraghavan; N. Chandrabhas; A. K. Sood
J. Appl. Phys. 68, 3303–3306 (1990) https://doi.org/10.1063/1.346381
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Kinetics of cw laser‐assisted synthesis of thin CuxTey films
F. Hanus; M. Wautelet
J. Appl. Phys. 68, 3307–3312 (1990) https://doi.org/10.1063/1.346382
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Intrinsic Cu gettering at a thermally grown SiO2/Si interface
P. Bai; G.‐R. Yang; T.‐M. Lu
J. Appl. Phys. 68, 3313–3316 (1990) https://doi.org/10.1063/1.346383
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In situ study of film stresses in metal silicides using absorption‐edge‐contour mapping
G. E. White; Haydn Chen
J. Appl. Phys. 68, 3317–3321 (1990) https://doi.org/10.1063/1.346384
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Modeling and diagnostics of silicon nitride deposition from 254‐nm Hg photosensitization of SiH4‐NH3 mixtures: Luminescence of HgNH3 excimer and laser‐induced fluorescence of NH2(Ã 2A1)
Takashi Fuyuki; Bruno Allain; Jérôme Perrin
J. Appl. Phys. 68, 3322–3337 (1990) https://doi.org/10.1063/1.346385
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Indium phosphide on silicon heteroepitaxy: Lattice deformation and strain relaxation
D. S. Wuu; R. H. Horng; M. K. Lee
J. Appl. Phys. 68, 3338–3342 (1990) https://doi.org/10.1063/1.346386
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Selectively Se‐doped AlGaAs/GaAs heterostructures with reduced DX‐center concentrations grown by molecular‐beam epitaxy
Tomonori Ishikawa; Takeshi Maeda; Kazuo Kondo
J. Appl. Phys. 68, 3343–3347 (1990) https://doi.org/10.1063/1.346387
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Characteristics and thermal behavior of W/Si multilayers with well‐defined interfaces
V. Dupuis; M. F. Ravet; C. Tête; M. Piecuch; B. Vidal
J. Appl. Phys. 68, 3348–3355 (1990) https://doi.org/10.1063/1.346388
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Atomspheric pressure organometallic vapor‐phase epitaxial growth and characterization of Ga0.4In0.6P/(Al0.4Ga0.6)0.5In0.5P strained quantum wells
T. Y. Wang; A. W. Kimball; G. S. Chen; D. Birkedal; G. B. Stringfellow
J. Appl. Phys. 68, 3356–3363 (1990) https://doi.org/10.1063/1.346364
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In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy
Stephanie M. Koch; Olivier Acher; Franck Omnes; Martin Defour; Manijeh Razeghi; B. Drévillon
J. Appl. Phys. 68, 3364–3369 (1990) https://doi.org/10.1063/1.346365
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Deep center characterization by photo‐induced transient spectroscopy
Maria J. S. P. Brasil; P. Motisuke
J. Appl. Phys. 68, 3370–3376 (1990) https://doi.org/10.1063/1.346339
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Pressure studies of resonant DX centers: Thermal emission from metastable Si and S donors in GaAs
R. Piotrzkowski; T. Suski; P. Wiśniewski; K. Ploog; J. Knecht
J. Appl. Phys. 68, 3377–3380 (1990) https://doi.org/10.1063/1.346340
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EL2 and anion antisite defects in plastically deformed GaAs
D. M. Hofmann; B. K. Meyer; J.‐M. Spaeth; M. Wattenbach; J Krüger; C. Kisielowski‐Kemmerich; H. Alexander
J. Appl. Phys. 68, 3381–3385 (1990) https://doi.org/10.1063/1.346341
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Chlorine‐related neutral complex in screen‐printed CdTe
O. Ka; G. Neu
J. Appl. Phys. 68, 3386–3389 (1990) https://doi.org/10.1063/1.346342
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Optical and electrical properties of ytterbium‐doped GaAs grown by metalorganic chemical vapor deposition
Akihito Taguchi; Hiroshi Nakagome; Kenichiro Takahei
J. Appl. Phys. 68, 3390–3393 (1990) https://doi.org/10.1063/1.346343
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Midgap states in metalorganic vapor phase epitaxy grown AlxGa1−xAs
Tamotsu Hashizume; Hideki Hasegawa; Hideo Ohno
J. Appl. Phys. 68, 3394–3400 (1990) https://doi.org/10.1063/1.346344
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Electrical resistivity of crystalline ZrC0.93, 1000–3000 K
C. H. Hinrichs; M. H. Hinrichs; W. A. Mackie
J. Appl. Phys. 68, 3401–3404 (1990) https://doi.org/10.1063/1.346345
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Shockley–Read recombination and trapping in p‐type HgCdTe
R. Fastow; D. Goren; Y. Nemirovsky
J. Appl. Phys. 68, 3405–3412 (1990) https://doi.org/10.1063/1.346346
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Structure and temperature dependence of conductivity of Ag2.5Se‐Se composite
Satish Vitta
J. Appl. Phys. 68, 3413–3417 (1990) https://doi.org/10.1063/1.346347
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On the quantum theory of electron transport in the Wigner formalism
F. A. Buot
J. Appl. Phys. 68, 3418–3424 (1990) https://doi.org/10.1063/1.346348
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Charge‐quantization effects on current‐voltage characteristics of AlGaAs/GaAs resonant tunneling diodes with spacer layers
E. T. Koenig; B. Jogai; M. J. Paulus; C. I. Huang; C. A. Bozada
J. Appl. Phys. 68, 3425–3430 (1990) https://doi.org/10.1063/1.346349
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Trapping kinetics and metastability of the DX center in AlGaAs
Y. N. Mohapatra; V. Kumar
J. Appl. Phys. 68, 3431–3434 (1990) https://doi.org/10.1063/1.346350
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Effect of the confining potential on the magneto‐optical spectrum of a quantum dot
F. Geerinckx; F. M. Peeters; J. T. Devreese
J. Appl. Phys. 68, 3435–3438 (1990) https://doi.org/10.1063/1.346351
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Effect of interface state distribution on field effect conductance activation energy in hydrogenated amorphous silicon thin film transistors
Byung‐Seong Bae; Choochon Lee
J. Appl. Phys. 68, 3439–3442 (1990) https://doi.org/10.1063/1.346352
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Alloy‐disorder‐induced intrasubband scattering in a quantum well under an electric field
P. K. Basu; D. Raychaudhury
J. Appl. Phys. 68, 3443–3444 (1990) https://doi.org/10.1063/1.346353
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Effect of NH3 plasma treatment of gate nitride on the performance of amorphous silicon thin‐film transistors
Shengwen Luan; Gerold W. Neudeck
J. Appl. Phys. 68, 3445–3450 (1990) https://doi.org/10.1063/1.346354
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On the effect of the barrier widths in the InAs/AlSb/GaSb single‐barrier interband tunneling structures
J. F. Chen; L. Yang; M. C. Wu; S. N. G. Chu; A. Y. Cho
J. Appl. Phys. 68, 3451–3455 (1990) https://doi.org/10.1063/1.346355
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Persistent photoconductivity in SIMOX film structures
Santos Mayo; Jeremiah R. Lowney; Peter Roitman; Donald B. Novotny
J. Appl. Phys. 68, 3456–3460 (1990) https://doi.org/10.1063/1.346356
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Efficient numerical simulation of electron states in quantum wires
Thomas Kerkhoven; Albert T. Galick; Umberto Ravaioli; John H. Arends; Youcef Saad
J. Appl. Phys. 68, 3461–3469 (1990) https://doi.org/10.1063/1.346357
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Correlation between current‐voltage and capacitance‐voltage Schottky barrier height on (100) and (110) GaAs and (110) InP surfaces
Vincent W. L. Chin; Martin A. Green; John W. V. Storey
J. Appl. Phys. 68, 3470–3474 (1990) https://doi.org/10.1063/1.347169
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Temperature dependence of the electrical characteristics of Yb/p‐InP tunnel metal‐insulator‐semiconductor junctions
A. Singh; K. C. Reinhardt; W. A. Anderson
J. Appl. Phys. 68, 3475–3483 (1990) https://doi.org/10.1063/1.346358
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Thermal evolution from a precursor to the Y‐Ba‐Cu‐O superconductor: X‐ray absorption spectroscopy study and application to thick‐film technology
Maurizio Sacchi; Fausto Sirotti; Maria Prudenziati
J. Appl. Phys. 68, 3484–3492 (1990) https://doi.org/10.1063/1.346359
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Synthesis and properties of high‐Tc YBa2Cu3O7−y oriented thin films
B. R. Zhao; C. W. Yuan; Y. Z. Zhang; J. Gao; Y. Y. Zhao; P. Xu; Y. M. Yang; L. Li
J. Appl. Phys. 68, 3493–3497 (1990) https://doi.org/10.1063/1.346360
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Magnetic field and temperature dependence of flux creep in oriented grained and single‐crystalline YBa2Cu3Ox
C. Keller; H. Küpfer; A. Gurevich; R. Meier‐Hirmer; T. Wolf; R. Flükiger; V. Selvamanickam; K. Salama
J. Appl. Phys. 68, 3498–3503 (1990) https://doi.org/10.1063/1.346361
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Magnetism and structural chemistry of RECo13−xGax alloys (RE=La,Ce,Pr,Nd, and mischmetal MM)
F. Weitzer; K. Hiebl; Yu. N. Grin; P. Rogl; H. Noël
J. Appl. Phys. 68, 3504–3507 (1990) https://doi.org/10.1063/1.346362
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Perpendicular magnetic anisotropy of Fe/SiO2 multilayer film
Masakatsu Senda; Yasuhiro Nagai
J. Appl. Phys. 68, 3508–3511 (1990) https://doi.org/10.1063/1.346363
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Magnetism and crystal chemistry in REFe12−xGax (RE=Y,Ce,Pr,Nd,Sm,Gd,Tb,Dy,Ho,Er,Tm,Yb,Lu and MM=mischmetal) and (Zr,Pr) (Fe1−xCox)12−yGay
F. Weitzer; K. Hiebl; P. Rogl; Yu. N. Grin
J. Appl. Phys. 68, 3512–3517 (1990) https://doi.org/10.1063/1.346336
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Measured electrical conductivities of carbon‐fiber composite materials: Effects on nuclear magnetic resonance imaging
Arthur C. Lind; Charles G. Fry; Christopher H. Sotak
J. Appl. Phys. 68, 3518–3528 (1990) https://doi.org/10.1063/1.346337
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Composition‐dependent ferroelectric Curie temperature of Pb5(Cr1−xAlx)3F19 from 555 to 280 K and of Pb5 (Cr1−xFex)3F19 from 555 to 725 K for 0≤x≤1
J. Ravez; A. Simon; V. Andriamampianina; J. Grannec; P. Hagenmuller; S. C. Abrahams
J. Appl. Phys. 68, 3529–3531 (1990) https://doi.org/10.1063/1.346338
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Disorder in vitreous SiO2: The effect of thermal annealing on structural properties
P. Lange; U. Schnakenberg; S. Ullerich; H.‐J. Schliwinski
J. Appl. Phys. 68, 3532–3537 (1990) https://doi.org/10.1063/1.346312
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Optical properties of Ga1−xInxP1−ySby alloys grown by organometallic vapor phase epitaxy
D. H. Jaw; M. J. Jou; Z. M. Fang; G. B. Stringfellow
J. Appl. Phys. 68, 3538–3543 (1990) https://doi.org/10.1063/1.346313
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Optical and magneto‐optical tensor spectra of bismuth‐substituted yttrium‐iron‐garnet films
Volker Doormann; Jens‐Peter Krumme; Horst Lenz
J. Appl. Phys. 68, 3544–3553 (1990) https://doi.org/10.1063/1.346314
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Species dependence of passivation and reactivation of acceptors in hydrogenated GaAs
I. Szafranek; G. E. Stillman
J. Appl. Phys. 68, 3554–3563 (1990) https://doi.org/10.1063/1.346315
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In situ investigation of the low‐pressure metalorganic chemical vapor deposition of lattice‐mismatched semiconductors using reflectance anisotropy measurements
O. Acher; S. M. Koch; F. Omnes; M. Defour; M. Razeghi; B. Drévillon
J. Appl. Phys. 68, 3564–3577 (1990) https://doi.org/10.1063/1.346316
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Role of Eu2+ luminescent centers in the electro‐optical characteristics of red‐emitting CaS:Eu thin‐film electroluminescent devices with memory
M. Ando; Y. A. Ono
J. Appl. Phys. 68, 3578–3583 (1990) https://doi.org/10.1063/1.346317
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O2 molecules dissolved in synthetic silica glasses and their photochemical reactions induced by ArF excimer laser radiation
Koichi Awazu; Hiroshi Kawazoe
J. Appl. Phys. 68, 3584–3591 (1990) https://doi.org/10.1063/1.346318
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Photoluminescence study of HgZnTe alloys
A. Ravid; A. Sher; A. Zussman
J. Appl. Phys. 68, 3592–3597 (1990) https://doi.org/10.1063/1.346319
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Laser heating effects in the characterization of carbon fibers by Raman spectroscopy
Joel W. Ager, III; D. Kirk Veirs; Jacob Shamir; Gerd M. Rosenblatt
J. Appl. Phys. 68, 3598–3608 (1990) https://doi.org/10.1063/1.346320
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Oxidation of the Si(100) surface promoted by Sr overlayer: An x‐ray photoemission study
A. Mesarwi; W. C. Fan; A. Ignatiev
J. Appl. Phys. 68, 3609–3613 (1990) https://doi.org/10.1063/1.346321
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Thermal field emission observation of single‐crystal LaB6
Haruto Nagata; Ken Harada; Ryuichi Shimizu
J. Appl. Phys. 68, 3614–3618 (1990) https://doi.org/10.1063/1.346322
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Study of interface impurity sputtering in partially ionized beam deposition of Cu on Si
P. Bai; G.‐R. Yang; T.‐M. Lu
J. Appl. Phys. 68, 3619–3624 (1990) https://doi.org/10.1063/1.346323
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Spontaneous pattern on the corroded surface of metal: Phenomenon and theory
J. J. Yang; X. Y. Zhou
J. Appl. Phys. 68, 3625–3629 (1990) https://doi.org/10.1063/1.346324
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Electron‐beam‐induced pattern etching of AlGaAs using an ultrathin GaAs oxide as a resist
M. Taneya; Y. Sugimoto; H. Hidaka; K. Akita
J. Appl. Phys. 68, 3630–3634 (1990) https://doi.org/10.1063/1.346325
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Quantitative Auger sputter depth profiling of very thin nitrided oxide
K. Barla; D. Nicolas; R. Pantel; B. Vuillermoz; A. Straboni; Y. Caratini
J. Appl. Phys. 68, 3635–3642 (1990) https://doi.org/10.1063/1.346326
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Thermal expansion coefficients of high‐Tc superconductor substrate NdGaO3 single crystal
Masahiro Sasaura; Shintaro Miyazawa; Masashi Mukaida
J. Appl. Phys. 68, 3643–3644 (1990) https://doi.org/10.1063/1.346327
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Free molecular transport and deposition in long rectangular trenches
T. S. Cale; G. B. Raupp; T. H. Gandy
J. Appl. Phys. 68, 3645–3652 (1990) https://doi.org/10.1063/1.346328
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Formation of buried oxynitride layers in silica glass by ion implantation
Keiji Oyoshi; Takashi Tagami; Shubei Tanaka
J. Appl. Phys. 68, 3653–3660 (1990) https://doi.org/10.1063/1.346329
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The G value in plasma and radiation chemistry
James K. Baird; George P. Miller; Ning Li
J. Appl. Phys. 68, 3661–3668 (1990) https://doi.org/10.1063/1.346330
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PH3 surface chemistry on Si(111)‐(7×7): A study by Auger spectroscopy and electron stimulated desorption methods
R. M. Wallace; P. A. Taylor; W. J. Choyke; J. T. Yates, Jr.
J. Appl. Phys. 68, 3669–3678 (1990) https://doi.org/10.1063/1.347168
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Analysis of the dominant modes of a slotted‐helix‐loaded cylindrical waveguide for use in plasma production
A. Ganguli; P. Appala Naidu
J. Appl. Phys. 68, 3679–3687 (1990) https://doi.org/10.1063/1.346331
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Interaction of metallized tubules with electromagnetic radiation
F. Behroozi; M. Orman; R. Reese; W. Stockton; J. Calvert; F. Rachford; P. Schoen
J. Appl. Phys. 68, 3688–3693 (1990) https://doi.org/10.1063/1.346332
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Characterization and modeling of silicon metal‐oxide‐semiconductor transistors at liquid‐helium temperature: Influence of source‐drain series resistances
I. M. Hafez; F. Balestra; G. Ghibaudo
J. Appl. Phys. 68, 3694–3700 (1990) https://doi.org/10.1063/1.346333
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High‐performance metal/SiO2/InSb capacitor fabricated by photoenhanced chemical vapor deposition
Tai‐Ping Sun; Si‐Chen Lee; Kou‐Chen Liu; Yen‐Ming Pang; Sheng‐Jenn Yang
J. Appl. Phys. 68, 3701–3706 (1990) https://doi.org/10.1063/1.346334
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Shallow junctions by out‐diffusion from BF2 implanted polycrystalline silicon
G. E. Georgiou; T. T. Sheng; J. Kovalchick; W. T. Lynch; D. Malm
J. Appl. Phys. 68, 3707–3713 (1990) https://doi.org/10.1063/1.346335
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Shallow junctions by out‐diffusion from Arsenic implanted polycrystalline silicon
G. E. Georgiou; T. T. Sheng; F. A. Baiocchi; J. Kovalchick; W. T. Lynch; D. Malm
J. Appl. Phys. 68, 3714–3722 (1990) https://doi.org/10.1063/1.346309
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Anomalous Hall effect in polycrystalline HgTe
Tirlok Nath; Savita Roy; P. Saxena; P. C. Mathur
J. Appl. Phys. 68, 3723–3725 (1990) https://doi.org/10.1063/1.346310
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Secondary ion mass spectroscopy determination of oxygen diffusion coefficient in heavily Sb doped Si
M. Pagani
J. Appl. Phys. 68, 3726–3728 (1990) https://doi.org/10.1063/1.346311
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Generation of very short far‐infrared pulses by cavity dumping a molecular gas laser
R. E. M. de Bekker; L. M. Claessen; P. Wyder
J. Appl. Phys. 68, 3729–3731 (1990) https://doi.org/10.1063/1.347167
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A general trend for the Stark widths of single ionized noble gases
Héctor O. Di Rocco
J. Appl. Phys. 68, 3732–3734 (1990) https://doi.org/10.1063/1.346286
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Ion‐induced radical production on surfaces during deposition of hydrogenated amorphous carbon
Y. Yamashita; K. Katayose; H. Toyoda; H. Sugai
J. Appl. Phys. 68, 3735–3737 (1990) https://doi.org/10.1063/1.346287
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Reduced light‐induced changes of photoconductivity in duterated amorphous silicon
G. Ganguly; A. Suzuki; S. Yamasaki; K. Nomoto; A. Matsuda
J. Appl. Phys. 68, 3738–3740 (1990) https://doi.org/10.1063/1.346288
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Absorption spectrum of EL2 defect in p‐type GaAs
Marek Skowronski
J. Appl. Phys. 68, 3741–3743 (1990) https://doi.org/10.1063/1.346289
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Negative differential resistance due to resonant interband tunneling of holes
D. H. Chow; E. T. Yu; J. R. Söderström; D. Z.‐Y. Ting; T. C. McGill
J. Appl. Phys. 68, 3744–3746 (1990) https://doi.org/10.1063/1.346290
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Band‐gap narrowing in novel III‐V semiconductors
S. C. Jain; J. M. McGregor; D. J. Roulston
J. Appl. Phys. 68, 3747–3749 (1990) https://doi.org/10.1063/1.346291
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Investigation of diethylarsine as a replacement for arsine in organometallic vapor‐phase epitaxy of GaAs
Tetsu Kachi; Hiroshi Ito; Shigeo Terada
J. Appl. Phys. 68, 3750–3752 (1990) https://doi.org/10.1063/1.346292
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In‐situ optimization of coupling between semiconductor claddings and dielectric waveguides
David L. Veasey; Donald R. Larson; Theodore E. Batchman
J. Appl. Phys. 68, 3753–3755 (1990) https://doi.org/10.1063/1.346293
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Coupling‐loss‐arrested misaligned semiconductor laser arrays
Zheng Wang; Guotong Du; Dingsan Gao
J. Appl. Phys. 68, 3756–3758 (1990) https://doi.org/10.1063/1.346294
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Comments on ‘‘Measurements of minority‐carrier diffusion length in n‐CuInSe2 by electron‐beam‐induced current method’’ [J. Appl. Phys. 66, 5412 (1989)]
Keung L. Luke
J. Appl. Phys. 68, 3759 (1990) https://doi.org/10.1063/1.346295
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Reply to ‘‘Comments on ‘Measurements of minority‐carrier diffusion length in n‐CuInSe2 by electron‐beam‐induced current method’ ’’ [J. Appl. Phys. 66, 5412 (1989)]
R. Scheer; H. J. Lewerenz
J. Appl. Phys. 68, 3760 (1990) https://doi.org/10.1063/1.346296
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Comment on ‘‘Lateral restoring force on a magnet levitated above a superconductor’’ [J. Appl. Phys. 67, 2631 (1990)]
Z. J. Yang; T. H. Johansen; H. Bratsberg; G. Helgesen; A. T. Skjeltorp
J. Appl. Phys. 68, 3761–3762 (1990) https://doi.org/10.1063/1.346297
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Dual implants in InGaAs
Mulpuri V. Rao; F. Moore; H. B. Dietrich
J. Appl. Phys. 68, 3763–3765 (1990) https://doi.org/10.1063/1.346298
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Migration of Si in molecular‐beam epitaxial growth of δ‐doped GaAs and Al0.25Ga0.75As
Ph. Jansen; M. Meuris; M. Van Rossum; G. Borghs
J. Appl. Phys. 68, 3766–3768 (1990) https://doi.org/10.1063/1.346299
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The influence of bias power levels on mark length variability in rare earth–transition metal optical data storage media
Brian J. Bartholomeusz; David J. Genova; Tukaram K. Hatwar
J. Appl. Phys. 68, 3769–3771 (1990) https://doi.org/10.1063/1.346300
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Transport and magnetic properties of high‐Tc YBa2Cu3O7−x films
D. W. Chung; I. Maartense; T. L. Peterson; P. M. Hemenger
J. Appl. Phys. 68, 3772–3774 (1990) https://doi.org/10.1063/1.346301
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Determination of critical current density and transition temperature of YBa2 Cu3 O7−x thin films by measurement of ac susceptibility
Yi‐Qun Li; Dongwook Noh; Bernard Gallois; Gary S. Tompa; Peter E. Norris; Peter A. Zawadzki
J. Appl. Phys. 68, 3775–3777 (1990) https://doi.org/10.1063/1.346302
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Submicron structuring of YBa2Cu3O7 thin films with electron beam lithography
W. Albrecht; W. Langheinrich; H. Kurz; U. Poppe; H. Soltner; J. Schubert
J. Appl. Phys. 68, 3778–3779 (1990) https://doi.org/10.1063/1.346303
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Experimental study of intersubband infrared transitions in coupled quantum wells under an electric field
H. C. Liu; M. Buchanan; Z. R. Wasilewski
J. Appl. Phys. 68, 3780–3782 (1990) https://doi.org/10.1063/1.346304
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The theory of ultrasoft magnetic films
J. P. Bouchaud; P. G. Zérah
J. Appl. Phys. 68, 3783–3785 (1990) https://doi.org/10.1063/1.346305
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Cathodoluminescence of diamondlike films deposited by glow discharge
F. Alvarez; R. R. Koropecki; F. Fajardo
J. Appl. Phys. 68, 3786–3788 (1990) https://doi.org/10.1063/1.346306
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Enhancement of intrinsic photoluminescence due to lateral confinement in InP/InGaAs quantum wires and dots
J. N. Patillon; R. Gamonal; M. Iost; J. P. André; B. Soucail; C. Delalande; M. Voos
J. Appl. Phys. 68, 3789–3791 (1990) https://doi.org/10.1063/1.346307
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Identification of CoSi inclusions within buried CoSi2 layers formed by ion implantation
A. De Veirman; J. Van Landuyt; K. J. Reeson; R. Gwilliam; C. Jeynes; B. J. Sealy
J. Appl. Phys. 68, 3792–3794 (1990) https://doi.org/10.1063/1.346308
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Investigation on the quantum well structure of a GaAs/Al0.3Ga0.7As superlattice grown on a misoriented substrate
Y. Jin; Y. Chen; X. Zhu; S. L. Zhang
J. Appl. Phys. 68, 3795–3797 (1990) https://doi.org/10.1063/1.346283
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Erratum: ‘‘Direct and efficient solutions of integral equations for scattering from strips and slots’’ [J. Appl. Phys. 66, 69 (1989)].
John L. Tsalamengas; John G. Fikioris; Barbara Th. Babili
J. Appl. Phys. 68, 3798 (1990) https://doi.org/10.1063/1.347204
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Erratum: ‘‘Elimination of slips on silicon wafer edge in rapid thermal process by using a ring oxide’’ [J. Appl. Phys. 67, 7583 (1990)]
Byung‐Jin Cho; Choong‐Ki Kim
J. Appl. Phys. 68, 3798 (1990) https://doi.org/10.1063/1.347206
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Erratum: ‘‘Temperature dependence of transition metal magnetism’’ [J. Appl. Phys. 67, 4552 (1990)]
K. Schwartzman; E. J. Hartford; J. L. Fry
J. Appl. Phys. 68, 3799 (1990) https://doi.org/10.1063/1.347205
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Gallium arsenide and other compound semiconductors on silicon
S. F. Fang; K. Adomi; S. Iyer; H. Morkoç; H. Zabel; C. Choi; N. Otsuka
J. Appl. Phys. 68, R31–R58 (1990) https://doi.org/10.1063/1.346284
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