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Charge exchange of low‐energy ions in thin carbon foils
J. Appl. Phys. 68, 2547–2554 (1990)
https://doi.org/10.1063/1.346478
The operation of a uniformly insulated extraction applied‐B ion diode
J. Appl. Phys. 68, 2555–2561 (1990)
https://doi.org/10.1063/1.346479
The effects of F2 concentration on discharge pumped KrF laser characteristics
J. Appl. Phys. 68, 2572–2576 (1990)
https://doi.org/10.1063/1.346481
Study of energy deposition in the electron‐beam‐pumped laser facility HAWK
J. Appl. Phys. 68, 2577–2588 (1990)
https://doi.org/10.1063/1.346482
Influence of carrier spreading on the current‐controlled lateral‐mode behavior of twin‐stripe lasers
J. Appl. Phys. 68, 2599–2605 (1990)
https://doi.org/10.1063/1.346484
Comparison of model predictions with detailed species kinetic measurements of XeCl laser mixtures
J. Appl. Phys. 68, 2615–2631 (1990)
https://doi.org/10.1063/1.346486
Measurement of refractive indices of homogeneous fibers with regular or irregular transverse sections
J. Appl. Phys. 68, 2639–2642 (1990)
https://doi.org/10.1063/1.346488
Transient signals induced by laser irradiation of negative ions in hollow electrode discharges of Cl2 and HCl in N2
J. Appl. Phys. 68, 2649–2656 (1990)
https://doi.org/10.1063/1.346490
The influence of Hg(63P2) population on emission processes in a low‐pressure mercury‐argon discharge
J. Appl. Phys. 68, 2661–2666 (1990)
https://doi.org/10.1063/1.346492
A helium discharge with neutral gas flow: Comparison of theory with experiments
J. Appl. Phys. 68, 2667–2673 (1990)
https://doi.org/10.1063/1.346466
Measurement of sodium density and the Na 514‐nm transition probability in a high‐pressure sodium arc
J. Appl. Phys. 68, 2687–2693 (1990)
https://doi.org/10.1063/1.346468
Interdiffusion and short‐range order in amorphous Ta‐Si multilayer structures
J. Appl. Phys. 68, 2694–2701 (1990)
https://doi.org/10.1063/1.346469
Proton irradiation of silicon: Complete electrical characterization of the induced recombination centers
J. Appl. Phys. 68, 2702–2707 (1990)
https://doi.org/10.1063/1.346470
Characterization of defects produced during self‐annealing implantation of As in silicon
J. Appl. Phys. 68, 2708–2712 (1990)
https://doi.org/10.1063/1.346444
X‐ray determination of the Debye temperature at high pressure using high‐energy synchrotron radiation
J. Appl. Phys. 68, 2719–2722 (1990)
https://doi.org/10.1063/1.346446
Diffusion of Zn into GaAs and AlGaAs from isothermal liquid‐phase epitaxy solutions
J. Appl. Phys. 68, 2723–2730 (1990)
https://doi.org/10.1063/1.346447
van der Waals epitaxial growth of thin BiI3 films on PbI2 and CdI2 substrates by a hot wall method
J. Appl. Phys. 68, 2735–2738 (1990)
https://doi.org/10.1063/1.346449
Investigation of the asymmetric misfit dislocation morphology in epitaxial layers with the zinc‐blende structure
J. Appl. Phys. 68, 2739–2746 (1990)
https://doi.org/10.1063/1.346450
Selenium and silicon delta‐doping properties of GaAs by atmospheric pressure metalorganic chemical vapor deposition
J. Appl. Phys. 68, 2747–2751 (1990)
https://doi.org/10.1063/1.346451
In situ spectroellipsometric study of the nucleation and growth of amorphous silicon
J. Appl. Phys. 68, 2752–2759 (1990)
https://doi.org/10.1063/1.346452
Study of subboundary generation in silicon‐on‐insulator films recrystallized by a pseudoline electron beam
J. Appl. Phys. 68, 2769–2775 (1990)
https://doi.org/10.1063/1.346454
Characterization and growth mechanisms of boron nitride films synthesized by ion‐beam‐assisted deposition
J. Appl. Phys. 68, 2780–2790 (1990)
https://doi.org/10.1063/1.347173
Reaction between SiC and W, Mo, and Ta at elevated temperatures
J. Appl. Phys. 68, 2796–2800 (1990)
https://doi.org/10.1063/1.346457
The effect of frictional stress on the calculation of critical thickness in epitaxy
J. Appl. Phys. 68, 2801–2808 (1990)
https://doi.org/10.1063/1.346458
Thermal ionization of excitons in GaAs/AlGaAs quantum well structures
J. Appl. Phys. 68, 2809–2812 (1990)
https://doi.org/10.1063/1.346459
Two‐level fluctuations of in‐plane current in a narrow lateral n‐i‐n junction
J. Appl. Phys. 68, 2813–2816 (1990)
https://doi.org/10.1063/1.346460
A priori incorporation of ballistic and heating effects in a four‐moment approach to the Boltzmann equation
J. Appl. Phys. 68, 2817–2823 (1990)
https://doi.org/10.1063/1.346461
Effects of inelastic electron‐phonon scattering on the resonant tunneling in double‐barrier structure
J. Appl. Phys. 68, 2829–2832 (1990)
https://doi.org/10.1063/1.346463
Design and surface chemistry of nonalloyed ohmic contacts to pseudomorphic InGaAs on n+GaAs
J. Appl. Phys. 68, 2833–2838 (1990)
https://doi.org/10.1063/1.346464
Resonant interband coupling in single‐barrier heterostructures of InAs/GaSb/InAs and GaSb/InAs/GaSb
J. Appl. Phys. 68, 2854–2857 (1990)
https://doi.org/10.1063/1.346417
Nonideal J‐V characteristics and interface states of an a‐Si:H Schottky barrier
J. Appl. Phys. 68, 2858–2867 (1990)
https://doi.org/10.1063/1.346418
Phase‐locking in series arrays of Josephson junctions shunted by a complex load
J. Appl. Phys. 68, 2868–2874 (1990)
https://doi.org/10.1063/1.346419
Ferromagnetic and speromagnetic behavior in a rapidly quenched Bi2O3‐CuO‐Fe2O3 system
J. Appl. Phys. 68, 2875–2882 (1990)
https://doi.org/10.1063/1.346420
Néel lines in the Bloch walls of bubble garnets and their dark‐field observation
J. Appl. Phys. 68, 2883–2891 (1990)
https://doi.org/10.1063/1.346421
Domain‐wall dynamics and Barkhausen effect in metallic ferromagnetic materials. I. Theory
J. Appl. Phys. 68, 2901–2907 (1990)
https://doi.org/10.1063/1.346423
Domain‐wall dynamics and Barkhausen effect in metallic ferromagnetic materials. II. Experiments
J. Appl. Phys. 68, 2908–2915 (1990)
https://doi.org/10.1063/1.346424
Freezing of the polarization fluctuations in lead magnesium niobate relaxors
J. Appl. Phys. 68, 2916–2921 (1990)
https://doi.org/10.1063/1.346425
Electro‐optical properties of films consisting of nematic liquid crystals and connected polymer microspheres
J. Appl. Phys. 68, 2922–2926 (1990)
https://doi.org/10.1063/1.347172
Epitaxial layer thickness measurement of double heterostructures using reflectance spectroscopy
J. Appl. Phys. 68, 2927–2938 (1990)
https://doi.org/10.1063/1.346426
InGaAsP compositional determination from reflectance spectroscopy of InGaAsP/InP heterostructures
J. Appl. Phys. 68, 2939–2944 (1990)
https://doi.org/10.1063/1.346427
Near‐ultraviolet optical absorption in sputter‐deposited cubic yttria
J. Appl. Phys. 68, 2945–2950 (1990)
https://doi.org/10.1063/1.346428
High resolution 4.2 K near band‐gap photoluminescence spectrum of mercuric iodide
J. Appl. Phys. 68, 2951–2954 (1990)
https://doi.org/10.1063/1.346429
Monte Carlo simulation of photoelectron emission from a gold specimen
J. Appl. Phys. 68, 2955–2961 (1990)
https://doi.org/10.1063/1.346430
Growth and characterization of (Ho,Tm,Er):YAG crystals for 2.09 μm laser
J. Appl. Phys. 68, 2966–2971 (1990)
https://doi.org/10.1063/1.346432
Polymer diffusion as a probe of damage in ion or plasma etching
J. Appl. Phys. 68, 2972–2982 (1990)
https://doi.org/10.1063/1.346433
Electromigration of Ga and Sb during anodization of Al/GaSb structures
J. Appl. Phys. 68, 2983–2988 (1990)
https://doi.org/10.1063/1.346434
Deposition and physical characterization of thin films of lithium niobate on silicon substrates
J. Appl. Phys. 68, 2989–2991 (1990)
https://doi.org/10.1063/1.346435
A new GaSb/AlSb/GaSb/AlSb/InAs double‐barrier interband tunneling diode and its tunneling mechanism
J. Appl. Phys. 68, 2997–3000 (1990)
https://doi.org/10.1063/1.346437
Temperature and energy dependence of ion‐beam synthesis of epitaxial Si/CoSi2/Si heterostructures
J. Appl. Phys. 68, 3001–3008 (1990)
https://doi.org/10.1063/1.346438
Comment on ‘‘Thermochemical heat of ablation of solid carbon’’ [J. Appl. Phys. 65, 3425 (1989)]
J. Appl. Phys. 68, 3011–3012 (1990)
https://doi.org/10.1063/1.346440
Granular Nix (SiO2)100−x thin films as low temperature thermometers
J. Appl. Phys. 68, 3015–3017 (1990)
https://doi.org/10.1063/1.346410
Properties of very uniform InxGa1−xAs single crystals grown by liquid‐phase electroepitaxy
J. Appl. Phys. 68, 3018–3020 (1990)
https://doi.org/10.1063/1.346411
Effect of nonparabolicity on free‐carrier absorption in semiconductors at quantizing magnetic fields
J. Appl. Phys. 68, 3024–3026 (1990)
https://doi.org/10.1063/1.346414
Ab initio band‐structure calculation of the semiconductor β‐FeSi2
J. Appl. Phys. 68, 3027–3029 (1990)
https://doi.org/10.1063/1.346415
Spectral properties of rf emission from high Tc films
J. Appl. Phys. 68, 3029–3031 (1990)
https://doi.org/10.1063/1.346392
On a simplified analysis of the photoemission from quaternary alloys
J. Appl. Phys. 68, 3032–3034 (1990)
https://doi.org/10.1063/1.346393
An observation of 650 °C deformation of Si surface under ultra high vacuum
J. Appl. Phys. 68, 3038–3040 (1990)
https://doi.org/10.1063/1.346395
InAs/AlSb/GaSb single‐barrier interband tunneling diodes with high peak‐to‐valley ratios at room temperature
J. Appl. Phys. 68, 3040–3043 (1990)
https://doi.org/10.1063/1.346396
Erratum: ‘‘The properties of the electromagnetic missile’’ [J. Appl. Phys. 66, 4025 (1989)]
J. Appl. Phys. 68, 3047 (1990)
https://doi.org/10.1063/1.347203
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Efficient methods for extracting superconducting resonator loss in the single-photon regime
Cliff Chen, David Perello, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.