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The C̆erenkov free‐electron laser for the relativistic electron beam with a slow rotating equilibrium
J. Appl. Phys. 68, 917–923 (1990)
https://doi.org/10.1063/1.346654
Anticipated improvement in laser beam uniformity using distributed phase plates with quasirandom patterns
J. Appl. Phys. 68, 924–931 (1990)
https://doi.org/10.1063/1.346655
Reconstruction of three‐dimensional range distributions by a modified tomographic technique
J. Appl. Phys. 68, 958–964 (1990)
https://doi.org/10.1063/1.346660
Reproducible leaky tube diffusion of Cd in InP at 500 °C
J. Appl. Phys. 68, 969–972 (1990)
https://doi.org/10.1063/1.346662
Crystal size dependence for impact initiation of cyclotrimethylenetrinitramine explosive
J. Appl. Phys. 68, 979–984 (1990)
https://doi.org/10.1063/1.346664
Effects of isovalent substitutions on lattice softening and transition character of BaTiO3 solid solutions
J. Appl. Phys. 68, 985–993 (1990)
https://doi.org/10.1063/1.346665
Numerical modeling of microscopic fluid distribution in porous media
J. Appl. Phys. 68, 994–1001 (1990)
https://doi.org/10.1063/1.346666
Dynamic approach for finding effective elastic and piezoelectric constants of superlattices
J. Appl. Phys. 68, 1009–1012 (1990)
https://doi.org/10.1063/1.346736
Strain relaxation of GaAs layers grown on heavily In‐doped substrates by organometallic vapor phase epitaxy
J. Appl. Phys. 68, 1013–1017 (1990)
https://doi.org/10.1063/1.346737
Mechanical properties of a‐C:H films prepared by plasma decomposition of C2H2
J. Appl. Phys. 68, 1018–1022 (1990)
https://doi.org/10.1063/1.346738
Optical characterization of Cd1−xMnxTe epilayers grown by liquid‐phase epitaxy
J. Appl. Phys. 68, 1023–1028 (1990)
https://doi.org/10.1063/1.346739
Effect of substrate temperature on recrystallization of plasma chemical vapor deposition amorphous silicon films
J. Appl. Phys. 68, 1029–1032 (1990)
https://doi.org/10.1063/1.346740
A transmission electron microscopy study of low‐temperature reaction at the Co‐Si interface
J. Appl. Phys. 68, 1033–1037 (1990)
https://doi.org/10.1063/1.346741
High‐quality molecular‐beam epitaxial regrowth of (Al,Ga)As on Se‐modified (100) GaAs surfaces
J. Appl. Phys. 68, 1038–1042 (1990)
https://doi.org/10.1063/1.346742
Recrystallization and grain growth phenomena in polycrystalline Si/CoSi2 thin‐film couples
J. Appl. Phys. 68, 1050–1058 (1990)
https://doi.org/10.1063/1.346744
Theoretical and experimental aspects of the thermal dependence of electron capture coefficients
J. Appl. Phys. 68, 1059–1069 (1990)
https://doi.org/10.1063/1.346745
Efficient calculation of ionization coefficients in silicon from the energy distribution function
J. Appl. Phys. 68, 1075–1081 (1990)
https://doi.org/10.1063/1.346747
Anomalous current‐voltage behavior in titanium‐silicided shallow source/drain junctions
J. Appl. Phys. 68, 1082–1087 (1990)
https://doi.org/10.1063/1.346748
Photoacoustic effect of silicon wafers with a p/n junction in the dc electric field
J. Appl. Phys. 68, 1088–1093 (1990)
https://doi.org/10.1063/1.347158
Recombination mechanism and carrier lifetimes of semi‐insulating GaAs:Cr
J. Appl. Phys. 68, 1094–1098 (1990)
https://doi.org/10.1063/1.346749
Photoemission studies of chemical bonding and electronic states at the Fe/Si interface
J. Appl. Phys. 68, 1099–1103 (1990)
https://doi.org/10.1063/1.346750
Ensemble Monte Carlo characterization of graded AlxGa1−xAs heterojunction barriers
J. Appl. Phys. 68, 1114–1122 (1990)
https://doi.org/10.1063/1.346728
Simulation of high‐frequency capacitance‐voltage characteristics of amorphous/crystalline heterojunctions
J. Appl. Phys. 68, 1138–1142 (1990)
https://doi.org/10.1063/1.346708
Superconducting Bi1.5Pb0.5Sr2Ca2Cu3Ox ceramics by rapid melt quenching and glass crystallization
J. Appl. Phys. 68, 1143–1150 (1990)
https://doi.org/10.1063/1.346709
Fabrication and chemical composition of rf magnetron sputtered Tl‐Ca‐Ba‐Cu‐O high Tc superconducting thin films
J. Appl. Phys. 68, 1157–1163 (1990)
https://doi.org/10.1063/1.346711
Magnetostrictive influence on the bistability of amorphous wires
J. Appl. Phys. 68, 1164–1168 (1990)
https://doi.org/10.1063/1.346712
Magnetic force microscopy: General principles and application to longitudinal recording media
J. Appl. Phys. 68, 1169–1183 (1990)
https://doi.org/10.1063/1.346713
Boron diffusivity in nonimplanted diamond single crystals measured by impedance spectroscopy
J. Appl. Phys. 68, 1184–1186 (1990)
https://doi.org/10.1063/1.346714
Photoluminescence of InAsBi and InAsSbBi grown by organometallic vapor phase epitaxy
J. Appl. Phys. 68, 1187–1191 (1990)
https://doi.org/10.1063/1.346715
Optical absorption in undoped yttrium aluminum garnet
J. Appl. Phys. 68, 1200–1204 (1990)
https://doi.org/10.1063/1.346717
Laser‐produced reduction of pentavalent vanadium in aqueous solutions and V2O5 powder
J. Appl. Phys. 68, 1205–1211 (1990)
https://doi.org/10.1063/1.346718
Quantum‐confinement effects in CdTe‐glass composite thin films produced using rf magnetron sputtering
J. Appl. Phys. 68, 1218–1224 (1990)
https://doi.org/10.1063/1.346720
In situ cleaning of GaAs surfaces using hydrogen dissociated with a remote noble‐gas discharge
J. Appl. Phys. 68, 1233–1236 (1990)
https://doi.org/10.1063/1.346723
Properties of amorphous hydrogenated carbon films from ArF laser‐induced C2H2 photolysis
J. Appl. Phys. 68, 1237–1241 (1990)
https://doi.org/10.1063/1.346724
The mechanism of ac stabilization in ferroelectric liquid‐crystal‐filled cells
J. Appl. Phys. 68, 1242–1246 (1990)
https://doi.org/10.1063/1.347157
Synthesis of diamond powder in acetylene oxygen plasma
J. Appl. Phys. 68, 1247–1251 (1990)
https://doi.org/10.1063/1.346725
Influence of elastic stress on the growth kinetics of planar thin‐film binary diffusion couples
J. Appl. Phys. 68, 1252–1264 (1990)
https://doi.org/10.1063/1.346726
Growth by molecular‐beam epitaxy and characterization of (InAs)m(GaAs)m short period superlattices on InP substrates
J. Appl. Phys. 68, 1282–1286 (1990)
https://doi.org/10.1063/1.346729
Electrical and structural study of partially relaxed Ga0.92In0.08As(p+)/ GaAs(n) diodes
J. Appl. Phys. 68, 1303–1309 (1990)
https://doi.org/10.1063/1.346699
Abrupt Mg doping in thin graded base GaAs/GaAlAs heterojunction bipolar transistors
J. Appl. Phys. 68, 1318–1323 (1990)
https://doi.org/10.1063/1.346701
A globally convergent algorithm for the solution of the steady‐state semiconductor device equations
J. Appl. Phys. 68, 1324–1334 (1990)
https://doi.org/10.1063/1.346702
Theoretical analysis of channel‐doped amorphous silicon field‐effect transistors
J. Appl. Phys. 68, 1335–1339 (1990)
https://doi.org/10.1063/1.346703
An optimized prismatic cover design for concentrator and nonconcentrator solar cells
J. Appl. Phys. 68, 1345–1350 (1990)
https://doi.org/10.1063/1.346705
Effect of heat treatment on InGaAs/GaAs quantum wells
J. Appl. Phys. 68, 1351–1353 (1990)
https://doi.org/10.1063/1.346680
Metal buffer layers and Y‐Ba‐Cu‐O thin films on Pt and stainless steel using pulsed laser deposition
J. Appl. Phys. 68, 1354–1356 (1990)
https://doi.org/10.1063/1.346681
Tungsten‐carbon multilayers for x‐ray optics prepared by ArF excimer‐laser‐induced chemical vapor deposition
J. Appl. Phys. 68, 1361–1363 (1990)
https://doi.org/10.1063/1.346684
On the validity of a thermal spike mixing model for low‐Z metals
J. Appl. Phys. 68, 1364–1366 (1990)
https://doi.org/10.1063/1.346685
The synthesis and properties of low barrier Ag‐Ga intermetallic contacts to n‐type GaAs
J. Appl. Phys. 68, 1367–1369 (1990)
https://doi.org/10.1063/1.346686
Onset of hysteresis measured by scanning tunneling microscopy
J. Appl. Phys. 68, 1370–1372 (1990)
https://doi.org/10.1063/1.346687
Two‐band modeling of narrow band gap and interband tunneling devices
J. Appl. Phys. 68, 1372–1375 (1990)
https://doi.org/10.1063/1.346688
Characterization of thin CdS films grown by the gradient recrystallization and growth technique
J. Appl. Phys. 68, 1375–1377 (1990)
https://doi.org/10.1063/1.346689
The ambipolar diffusion length measured by the surface photovoltage technique
J. Appl. Phys. 68, 1381–1383 (1990)
https://doi.org/10.1063/1.346691
Velocity of shear horizontal surface waves on an isotropic elastic cylinder with finite width
J. Appl. Phys. 68, 1388–1391 (1990)
https://doi.org/10.1063/1.346693
X‐ray conversion efficiency in Cu plasma produced by subnanosecond laser pulses
J. Appl. Phys. 68, 1392–1394 (1990)
https://doi.org/10.1063/1.346694
Ferromagnetic resonance studies on Ho0.85Tb0.15Fe2Hx and Dy0.73Tb0.27Fe2Hx systems
J. Appl. Phys. 68, 1394–1396 (1990)
https://doi.org/10.1063/1.346695
A new type of epitaxial growth in lithium phthalocyanine film on KBr(100) prepared by the molecular‐beam epitaxy
J. Appl. Phys. 68, 1396–1398 (1990)
https://doi.org/10.1063/1.346696
Growth of as‐deposited superconducting thin films of Y1Ba2Cu3O7−δ using Nd:YAG laser
J. Appl. Phys. 68, 1403–1406 (1990)
https://doi.org/10.1063/1.346678
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Phase-change materials and their applications
Nelson Sepúlveda, Yunqi Cao
Decoding diffraction and spectroscopy data with machine learning: A tutorial
D. Vizoso, R. Dingreville