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Focusing properties of curved x‐ray diffractors

D. B. Wittry; Songquan Sun

J. Appl. Phys. 68, 387–391 (1990) https://doi.org/10.1063/1.346834

Abstract

View articletitled, Focusing properties of curved x‐ray diffractors

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Effective longitudinal dielectric constant of a rectangular lattice of parallel conducting prolate spheroids

John Lam

J. Appl. Phys. 68, 392–403 (1990) https://doi.org/10.1063/1.346835

Abstract

View articletitled, Effective longitudinal dielectric constant of a rectangular lattice of parallel conducting prolate spheroids

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Nonlinear interactions of particles in chains

T. B. Jones; Bijay Saha

J. Appl. Phys. 68, 404–410 (1990) https://doi.org/10.1063/1.346836

Abstract

View articletitled, Nonlinear interactions of particles in chains

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Transport of high‐current electron beams in a racetrack betatron

S. Humphries, Jr.; R. L. Terry; A. Frauenglass

J. Appl. Phys. 68, 411–421 (1990) https://doi.org/10.1063/1.346837

Abstract

View articletitled, Transport of high‐current electron beams in a racetrack betatron

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Quasistatic magnetic field penetration through a circular aperture of a spherical shield enclosing a spherical conductor

Elie Boridy

J. Appl. Phys. 68, 422–430 (1990) https://doi.org/10.1063/1.346838

Abstract

View articletitled, Quasistatic magnetic field penetration through a circular aperture of a spherical shield enclosing a spherical conductor

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The resonant circular array of electrically short elements

George Fikioris; Ronold W. P. King; Tai Tsun Wu

J. Appl. Phys. 68, 431–439 (1990) https://doi.org/10.1063/1.346839

Abstract

View articletitled, The resonant circular array of electrically short elements

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Real‐time monitoring of low‐temperature hydrogen plasma passivation of GaAs

Richard A. Gottscho; Bryan L. Preppernau; Stephen J. Pearton; A. Bruce Emerson; Konstantinos P. Giapis

J. Appl. Phys. 68, 440–445 (1990) https://doi.org/10.1063/1.346813

Abstract

View articletitled, Real‐time monitoring of low‐temperature hydrogen plasma passivation of GaAs

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Transverse electric field scattering by a Kerr media deposited on a conducting planar surface

P. Peterson; A. Gavrielides; E. Sakurada

J. Appl. Phys. 68, 446–455 (1990) https://doi.org/10.1063/1.346814

Abstract

View articletitled, Transverse electric field scattering by a Kerr media deposited on a conducting planar surface

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Second‐order nonlinear optical measurements in guest‐host and side‐chain polymers

L. Michael Hayden; Gerald F. Sauter; F. Robert Ore; Peg L. Pasillas; James M. Hoover; Geoffrey A. Lindsay; Ronald A. Henry

J. Appl. Phys. 68, 456–465 (1990) https://doi.org/10.1063/1.346815

Abstract

View articletitled, Second‐order nonlinear optical measurements in guest‐host and side‐chain polymers

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Circular interdigital transducers

S. Barbaid; J. Duclos; M. Leduc

J. Appl. Phys. 68, 466–473 (1990) https://doi.org/10.1063/1.346816

Abstract

View articletitled, Circular interdigital transducers

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Axial modes of acoustically coupled surface acoustic wave Fabry–Perot resonators

Otto Schwelb

J. Appl. Phys. 68, 474–481 (1990) https://doi.org/10.1063/1.347185

Abstract

View articletitled, Axial modes of acoustically coupled surface acoustic wave Fabry–Perot resonators

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Three‐dimensional theory of pulsed photothermal deformation

B. C. Li

J. Appl. Phys. 68, 482–487 (1990) https://doi.org/10.1063/1.346817

Abstract

View articletitled, Three‐dimensional theory of pulsed photothermal deformation

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Investigation of the nonlinear behavior of a partially ionized, turbulent plasma in a magnetic field

Scott A. Stafford; Mark Kot; J. Reece Roth

J. Appl. Phys. 68, 488–499 (1990) https://doi.org/10.1063/1.346818

Abstract

View articletitled, Investigation of the nonlinear behavior of a partially ionized, turbulent plasma in a magnetic field

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The influence of substrate topography on ion bombardment in plasma etching

S. G. Ingram

J. Appl. Phys. 68, 500–504 (1990) https://doi.org/10.1063/1.346819

Abstract

View articletitled, The influence of substrate topography on ion bombardment in plasma etching

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Laser‐induced‐fluorescence detection of SO and SO₂ in SF₆/O₂ plasma‐etching discharges

K. E. Greenberg; P. J. Hargis, Jr.

J. Appl. Phys. 68, 505–511 (1990) https://doi.org/10.1063/1.346820

Abstract

View articletitled, Laser‐induced‐fluorescence detection of SO and SO2 in SF6/O2 plasma‐etching discharges

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Penetration and equilibration of injected electrons into a high‐current hydrogen pseudospark‐type plasma

H. R. Bauer; M. A. Gundersen

J. Appl. Phys. 68, 512–516 (1990) https://doi.org/10.1063/1.346821

Abstract

View articletitled, Penetration and equilibration of injected electrons into a high‐current hydrogen pseudospark‐type plasma

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Lattice location and optical activity of Yb in III–V semiconducting compounds

A. Kozanecki; R. Groetzschel

J. Appl. Phys. 68, 517–522 (1990) https://doi.org/10.1063/1.346822

Abstract

View articletitled, Lattice location and optical activity of Yb in III–V semiconducting compounds

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Narrow Bloch walls and intrinsic characteristics of the pseudoternary Nd₁₄Fe_78−xMn_xC₈ systems

F. Xing; W. W. Ho

J. Appl. Phys. 68, 523–525 (1990) https://doi.org/10.1063/1.346823

Abstract

View articletitled, Narrow Bloch walls and intrinsic characteristics of the pseudoternary Nd14Fe78−xMnxC8 systems

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On the interactions of dislocation with planar free surfaces

N. P. Louat; K. Sadananda

J. Appl. Phys. 68, 526–530 (1990) https://doi.org/10.1063/1.346824

Abstract

View articletitled, On the interactions of dislocation with planar free surfaces

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Elastic distortion field in single layer heterostructures in the presence of misfit dislocations

M. Mazzer; A. Carnera; A. V. Drigo; C. Ferrari

J. Appl. Phys. 68, 531–539 (1990) https://doi.org/10.1063/1.346825

Abstract

View articletitled, Elastic distortion field in single layer heterostructures in the presence of misfit dislocations

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Heteroepitaxial growth and characterization of InP on Si substrates

Mitsuru Sugo; Yoshifumi Takanashi; M. M. Al‐jassim; Masafumi Yamaguchi

J. Appl. Phys. 68, 540–547 (1990) https://doi.org/10.1063/1.346826

Abstract

View articletitled, Heteroepitaxial growth and characterization of InP on Si substrates

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Molecular dynamics study of deformation and fracture for pure and bismuth‐segregated tilt copper bicrystals

Fu‐xin Zhou; Ba‐yi Peng; Xi‐jun Wu

J. Appl. Phys. 68, 548–555 (1990) https://doi.org/10.1063/1.346827

Abstract

View articletitled, Molecular dynamics study of deformation and fracture for pure and bismuth‐segregated tilt copper bicrystals

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Material constants of new piezoelectric Ta₂O₅ thin films

Yasuhiko Nakagawa; Takashi Okada

J. Appl. Phys. 68, 556–559 (1990) https://doi.org/10.1063/1.346828

Abstract

View articletitled, Material constants of new piezoelectric Ta2O5 thin films

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GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures

Y. D. Galeuchet; P. Roentgen; V. Graf

J. Appl. Phys. 68, 560–568 (1990) https://doi.org/10.1063/1.346829

Abstract

View articletitled, GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures

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The role of absorption in x‐ray diffraction measurements from epitaxial layers and substrates

Andrew W. Stevenson; Geoff N. Pain

J. Appl. Phys. 68, 569–573 (1990) https://doi.org/10.1063/1.346808

Abstract

View articletitled, The role of absorption in x‐ray diffraction measurements from epitaxial layers and substrates

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Growth of pinhole‐free epitaxial yttrium silicide on Si(111)

Michael P. Siegal; William R. Graham; Jorge J. Santiago‐Aviles

J. Appl. Phys. 68, 574–580 (1990) https://doi.org/10.1063/1.346809

Abstract

View articletitled, Growth of pinhole‐free epitaxial yttrium silicide on Si(111)

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Hydrogen‐passivated amorphous gallium arsenide thin films

Vardhireddy Manorama; P. M. Dighe; S. V. Bhoraskar; V. J. Rao; Prabhat Singh; A. A. Belhekar

J. Appl. Phys. 68, 581–585 (1990) https://doi.org/10.1063/1.346810

Abstract

View articletitled, Hydrogen‐passivated amorphous gallium arsenide thin films

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Formation of aluminum nitride films on GaAs(110) at room temperature by reactive molecular‐beam epitaxy: X‐ray and soft x‐ray photoemission spectroscopy

H.‐U. Baier; W. Mönch

J. Appl. Phys. 68, 586–590 (1990) https://doi.org/10.1063/1.346811

Abstract

View articletitled, Formation of aluminum nitride films on GaAs(110) at room temperature by reactive molecular‐beam epitaxy: X‐ray and soft x‐ray photoemission spectroscopy

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Computer simulation of actual and Kelvin‐probe‐measured potential profiles: Application to amorphous films

J. K. Arch; S. J. Fonash

J. Appl. Phys. 68, 591–600 (1990) https://doi.org/10.1063/1.346812

Abstract

View articletitled, Computer simulation of actual and Kelvin‐probe‐measured potential profiles: Application to amorphous films

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Transient decay of persistent photoconductivity in Al_0.3Ga_0.7As

T. W. Dobson; L. V. A. Scalvi; J. F. Wager

J. Appl. Phys. 68, 601–605 (1990) https://doi.org/10.1063/1.346785

Abstract

View articletitled, Transient decay of persistent photoconductivity in Al0.3Ga0.7As

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Compensation in Ge‐doped InP

S. W. Sun; B. W. Wessels

J. Appl. Phys. 68, 606–609 (1990) https://doi.org/10.1063/1.346786

Abstract

View articletitled, Compensation in Ge‐doped InP

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Preparation, structure, and electric properties of plasma‐polymerized titanium‐containing organic thin films

Yoshiharu Kagami; Takeshi Yamauchi; Yoshihito Osada; Isao Yoshizawa

J. Appl. Phys. 68, 610–616 (1990) https://doi.org/10.1063/1.346787

Abstract

View articletitled, Preparation, structure, and electric properties of plasma‐polymerized titanium‐containing organic thin films

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Ambipolar diffusion coefficient in molecular‐beam‐epitaxy‐grown silicon layers

V. Grivickas; V. Netiksis; D. Noreika; M. Petrauskas; M. Willander; M.‐A. Hasan; W.‐X. Ni

J. Appl. Phys. 68, 617–620 (1990) https://doi.org/10.1063/1.346788

Abstract

View articletitled, Ambipolar diffusion coefficient in molecular‐beam‐epitaxy‐grown silicon layers

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A Monte Carlo study for minority‐electron transport in p‐GaAs

Hideaki Taniyama; Masaaki Tomizawa; Tomofumi Furuta; Akira Yoshii

J. Appl. Phys. 68, 621–626 (1990) https://doi.org/10.1063/1.346789

Abstract

View articletitled, A Monte Carlo study for minority‐electron transport in p‐GaAs

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Electrical resistivities of single‐crystalline transition‐metal disilicides

Toshiyuki Hirano; Masatsugu Kaise

J. Appl. Phys. 68, 627–633 (1990) https://doi.org/10.1063/1.346790

Abstract

View articletitled, Electrical resistivities of single‐crystalline transition‐metal disilicides

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Optimum (Cs,O)/GaAs interface of negative‐electron‐affinity GaAs photocathodes

Qing‐Bin Lu; Yong‐Xi Pan; Huairong Gao

J. Appl. Phys. 68, 634–637 (1990) https://doi.org/10.1063/1.346791

Abstract

View articletitled, Optimum (Cs,O)/GaAs interface of negative‐electron‐affinity GaAs photocathodes

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Effects of copper precipitation in Σ=25 silicon bicrystals by deep‐level transient spectroscopy

J. F. Hamet; R. Abdelaoui; G. Nouet

J. Appl. Phys. 68, 638–645 (1990) https://doi.org/10.1063/1.346792

Abstract

View articletitled, Effects of copper precipitation in Σ=25 silicon bicrystals by deep‐level transient spectroscopy

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The effect of annealing temperature on electrical properties of Pd/n‐GaSb Schottky contacts

Y. K. Su; N. Y. Li; F. S. Juang; S. C. Wu

J. Appl. Phys. 68, 646–648 (1990) https://doi.org/10.1063/1.346793

Abstract

View articletitled, The effect of annealing temperature on electrical properties of Pd/n‐GaSb Schottky contacts

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Performance limits for the scanning tunneling microscope

T. Tiedje; A. Brown

J. Appl. Phys. 68, 649–654 (1990) https://doi.org/10.1063/1.346794

Abstract

View articletitled, Performance limits for the scanning tunneling microscope

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A contact limited precision of the quantized Hall resistance

Hiroshi Hirai; Susumu Komiyama

J. Appl. Phys. 68, 655–662 (1990) https://doi.org/10.1063/1.346795

Abstract

View articletitled, A contact limited precision of the quantized Hall resistance

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Effects of nonlinear dissipation on the supercurrent decay of a Josephson junction

Paolo Silvestrini

J. Appl. Phys. 68, 663–667 (1990) https://doi.org/10.1063/1.346796

Abstract

View articletitled, Effects of nonlinear dissipation on the supercurrent decay of a Josephson junction

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Investigation of ‘‘connectivity’’ in silver‐ceramic superconductor composites by their field screening property

S. Reich; V. M. Nabutovsky

J. Appl. Phys. 68, 668–674 (1990) https://doi.org/10.1063/1.346797

Abstract

View articletitled, Investigation of ‘‘connectivity’’ in silver‐ceramic superconductor composites by their field screening property

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Two‐dimensional paraconductivity in superconducting Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_Y

Vladimir V. Gridin; Thomas W. Krause; W. R. Datars

J. Appl. Phys. 68, 675–678 (1990) https://doi.org/10.1063/1.347184

Abstract

View articletitled, Two‐dimensional paraconductivity in superconducting Bi1.6Pb0.4Sr2Ca2Cu3OY

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Enhanced ac Josephson effect

R. Monaco

J. Appl. Phys. 68, 679–687 (1990) https://doi.org/10.1063/1.346798

Abstract

View articletitled, Enhanced ac Josephson effect

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Transport critical current density and electrical characterization of patterned high‐T_c superconducting thin films prepared by metallo‐organic decomposition

G. Lubberts

J. Appl. Phys. 68, 688–694 (1990) https://doi.org/10.1063/1.346799

Abstract

View articletitled, Transport critical current density and electrical characterization of patterned high‐Tc superconducting thin films prepared by metallo‐organic decomposition

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Force between a superconductor and a permanent magnet due to trapped flux

Ronald J. Adler; W. W. Anderson

J. Appl. Phys. 68, 695–700 (1990) https://doi.org/10.1063/1.346800

Abstract

View articletitled, Force between a superconductor and a permanent magnet due to trapped flux

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A new magnetic multilayer system: Iron‐bismuth

F. Z. Cui; Y. D. Fan; Y. Wang; A. M. Vredenberg; H. J. G. Draaisma; R. Xu

J. Appl. Phys. 68, 701–704 (1990) https://doi.org/10.1063/1.346801

Abstract

View articletitled, A new magnetic multilayer system: Iron‐bismuth

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Study of Co‐Cr films for perpendicular magnetic recording using nuclear magnetic resonance

Kazuetsu Yoshida; Hiroshi Kakibayashi; Hiroshi Yasuoka

J. Appl. Phys. 68, 705–712 (1990) https://doi.org/10.1063/1.346802

Abstract

View articletitled, Study of Co‐Cr films for perpendicular magnetic recording using nuclear magnetic resonance

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Theory of ferroelectric polymer‐ceramic composites

Habtamu Zewdie; F. Brouers

J. Appl. Phys. 68, 713–718 (1990) https://doi.org/10.1063/1.346803

Abstract

View articletitled, Theory of ferroelectric polymer‐ceramic composites

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Dielectric properties of rf‐sputtered Y₂O₃ thin films

Ken‐ichi Onisawa; Moriaki Fuyama; Katsumi Tamura; Kazuo Taguchi; Takahiro Nakayama; Yoshimasa A. Ono

J. Appl. Phys. 68, 719–723 (1990) https://doi.org/10.1063/1.346804

Abstract

View articletitled, Dielectric properties of rf‐sputtered Y2O3 thin films

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5.5 eV optical absorption, supralinearity, and sensitization of thermoluminescence in LiF TLD‐100

S. W. S. McKeever

J. Appl. Phys. 68, 724–731 (1990) https://doi.org/10.1063/1.346805

Abstract

View articletitled, 5.5 eV optical absorption, supralinearity, and sensitization of thermoluminescence in LiF TLD‐100

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Optical activity of incommensurate state of [N(CH₃)₄]₂CuCl₄

K. Saito; H. Sugiya; J. Kobayashi

J. Appl. Phys. 68, 732–735 (1990) https://doi.org/10.1063/1.346806

Abstract

View articletitled, Optical activity of incommensurate state of [N(CH3)4]2CuCl4

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Laser‐excited luminescence in Ti‐doped MgAl₂O₄ spinel

L. E. Bausá; I. Vergara; J. García‐Solé; W. Strek; P. J. Deren

J. Appl. Phys. 68, 736–740 (1990) https://doi.org/10.1063/1.346807

Abstract

View articletitled, Laser‐excited luminescence in Ti‐doped MgAl2O4 spinel

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Growth‐induced shallow acceptor defect and related luminescence effects in molecular beam epitaxial GaAs

I. Szafranek; M. A. Plano; M. J. McCollum; S. A. Stockman; S. L. Jackson; K. Y. Cheng; G. E. Stillman

J. Appl. Phys. 68, 741–754 (1990) https://doi.org/10.1063/1.346779

Abstract

View articletitled, Growth‐induced shallow acceptor defect and related luminescence effects in molecular beam epitaxial GaAs

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Assessment of Fe‐doped semi‐insulating InP crystals by scanning photoluminescence measurements

J. Y. Longère; K. Schohe; S. K. Krawczyk; R. Coquille; H. L’Haridon; P. N. Favennec

J. Appl. Phys. 68, 755–759 (1990) https://doi.org/10.1063/1.346780

Abstract

View articletitled, Assessment of Fe‐doped semi‐insulating InP crystals by scanning photoluminescence measurements

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Optical absorption and emission of GaP_1−xSb_x alloys

E. H. Reihlen; M. J. Jou; D. H. Jaw; G. B. Stringfellow

J. Appl. Phys. 68, 760–767 (1990) https://doi.org/10.1063/1.346781

Abstract

View articletitled, Optical absorption and emission of GaP1−xSbx alloys

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Post‐deposition sputter‐etch induced optical anisotropy in evaporated gold films

Ian J. Hodgkinson

J. Appl. Phys. 68, 768–774 (1990) https://doi.org/10.1063/1.346782

Abstract

View articletitled, Post‐deposition sputter‐etch induced optical anisotropy in evaporated gold films

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Physical study of laser‐produced plasma in confined geometry

R. Fabbro; J. Fournier; P. Ballard; D. Devaux; J. Virmont

J. Appl. Phys. 68, 775–784 (1990) https://doi.org/10.1063/1.346783

Abstract

View articletitled, Physical study of laser‐produced plasma in confined geometry

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Damage to InP and InGaAsP surfaces resulting from CH₄/H₂ reactive ion etching

Todd R. Hayes; U. K. Chakrabarti; F. A. Baiocchi; A. B. Emerson; H. S. Luftman; W. C. Dautremont‐Smith

J. Appl. Phys. 68, 785–792 (1990) https://doi.org/10.1063/1.346758

Abstract

View articletitled, Damage to InP and InGaAsP surfaces resulting from CH4/H2 reactive ion etching

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Downstream microwave plasma‐enhanced chemical vapor deposition of oxide using tetraethoxysilane

C. S. Pai; C.‐P. Chang

J. Appl. Phys. 68, 793–801 (1990) https://doi.org/10.1063/1.346759

Abstract

View articletitled, Downstream microwave plasma‐enhanced chemical vapor deposition of oxide using tetraethoxysilane

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Study of perfection and evolutive mechanism of magnetic Czochralski Si

Zaixian Mao; Zhenhong Mai; Shufan Cui; Lansheng Wu

J. Appl. Phys. 68, 802–805 (1990) https://doi.org/10.1063/1.346760

Abstract

View articletitled, Study of perfection and evolutive mechanism of magnetic Czochralski Si

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Experimental verification of temperature calculations in multilayers used for CO₂ laser recrystallization of silicon‐on‐insulator films

M. J. J. Theunissen; R. P. M. L. C. van de Nieuwenhoff; H. K. Kuiken

J. Appl. Phys. 68, 806–813 (1990) https://doi.org/10.1063/1.346761

Abstract

View articletitled, Experimental verification of temperature calculations in multilayers used for CO2 laser recrystallization of silicon‐on‐insulator films

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Photochemical etching of n‐InP as a function of temperature and illumination

Theodore D. Lowes; Daniel T. Cassidy

J. Appl. Phys. 68, 814–819 (1990) https://doi.org/10.1063/1.347183

Abstract

View articletitled, Photochemical etching of n‐InP as a function of temperature and illumination

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Experimental results of phase locking two virtual cathode oscillators

Kyle J. Hendricks; Richard Adler; R. Carl Noggle

J. Appl. Phys. 68, 820–825 (1990) https://doi.org/10.1063/1.346762

Abstract

View articletitled, Experimental results of phase locking two virtual cathode oscillators

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Fabrication of InP‐based NnpnN heterojunction bipolar transistor

C. H. Chen; Y. K. Su

J. Appl. Phys. 68, 826–829 (1990) https://doi.org/10.1063/1.346763

Abstract

View articletitled, Fabrication of InP‐based NnpnN heterojunction bipolar transistor

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GaAs phase effect on interfacial drain current of a 400‐μm‐wide gate Si‐implanted MESFET

Yasuyuki Saito

J. Appl. Phys. 68, 830–839 (1990) https://doi.org/10.1063/1.346764

Abstract

View articletitled, GaAs phase effect on interfacial drain current of a 400‐μm‐wide gate Si‐implanted MESFET

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Parameter studies for a coaxial saturable inductor magnetic switch

A. J. Power; P. Choi; J. E. Dolan

J. Appl. Phys. 68, 840–844 (1990) https://doi.org/10.1063/1.346765

Abstract

View articletitled, Parameter studies for a coaxial saturable inductor magnetic switch

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Effect of annealing on the ac leakage components of the ZnO varistor. I. Resistive current

T. K. Gupta; W. D. Straub

J. Appl. Phys. 68, 845–850 (1990) https://doi.org/10.1063/1.346766

Abstract

View articletitled, Effect of annealing on the ac leakage components of the ZnO varistor. I. Resistive current

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Effect of annealing on the ac leakage components of the ZnO varistor. II. Capacitive current

T. K. Gupta; W. D. Straub

J. Appl. Phys. 68, 851–855 (1990) https://doi.org/10.1063/1.346767

Abstract

View articletitled, Effect of annealing on the ac leakage components of the ZnO varistor. II. Capacitive current

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Significant improvement in the surface smoothness of post‐annealed Y‐Ba‐Cu‐O thin films upon silver addition

Sang Young Lee; T. S. Hahn; Y. H. Kim; S. S. Choi

J. Appl. Phys. 68, 856–858 (1990) https://doi.org/10.1063/1.346768

Abstract

View articletitled, Significant improvement in the surface smoothness of post‐annealed Y‐Ba‐Cu‐O thin films upon silver addition

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High concentration Zn doping in InP grown by low‐pressure metalorganic chemical vapor deposition

S. Chichibu; M. Kushibe; K. Eguchi; M. Funemizu; Y. Ohba

J. Appl. Phys. 68, 859–861 (1990) https://doi.org/10.1063/1.346769

Abstract

View articletitled, High concentration Zn doping in InP grown by low‐pressure metalorganic chemical vapor deposition

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Experimental study of self‐heating in undoped polycrystalline silicon thin films

C. A. Dimitriadis

J. Appl. Phys. 68, 862–864 (1990) https://doi.org/10.1063/1.346770

Abstract

View articletitled, Experimental study of self‐heating in undoped polycrystalline silicon thin films

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Reflecting boundary conditions for graded p‐n junctions

S. E. Schacham

J. Appl. Phys. 68, 865–867 (1990) https://doi.org/10.1063/1.346771

Abstract

View articletitled, Reflecting boundary conditions for graded p‐n junctions

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Visible Y‐junction diode laser with mixed coupling

C. J. van der Poel; J. Opschoor; A. Valster; R. R. Drenten; J. P. Andre

J. Appl. Phys. 68, 868–870 (1990) https://doi.org/10.1063/1.346772

Abstract

View articletitled, Visible Y‐junction diode laser with mixed coupling

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A model for the determination of the solid composition of ternary III‐V and II‐VI metalorganic chemical vapor deposition epilayers

N. Amir; D. Fekete; Y. Nemirovsky

J. Appl. Phys. 68, 871–873 (1990) https://doi.org/10.1063/1.346773

Abstract

View articletitled, A model for the determination of the solid composition of ternary III‐V and II‐VI metalorganic chemical vapor deposition epilayers

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X‐ray diffraction of multilayers with a systematic deviation of period

Chen Gao; Zuimin Jiang; Zigin Wu

J. Appl. Phys. 68, 874–875 (1990) https://doi.org/10.1063/1.346774

Abstract

View articletitled, X‐ray diffraction of multilayers with a systematic deviation of period

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Asymmetric Fabry–Perot reflection modulators using red‐ and blue‐shifted electroabsorption effects

R. H. Yan; K. K. Law; L. A. Coldren; J. L. Merz

J. Appl. Phys. 68, 875–877 (1990) https://doi.org/10.1063/1.346775

Abstract

View articletitled, Asymmetric Fabry–Perot reflection modulators using red‐ and blue‐shifted electroabsorption effects

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Nonlinear effect on surface charging by diatomic ion bombardment

K. Inoue

J. Appl. Phys. 68, 878–879 (1990) https://doi.org/10.1063/1.346776

Abstract

View articletitled, Nonlinear effect on surface charging by diatomic ion bombardment

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ZnSe p‐n junctions produced by metalorganic molecular‐beam epitaxy

M. Migita; A. Taike; H. Yamamoto

J. Appl. Phys. 68, 880–882 (1990) https://doi.org/10.1063/1.346777

Abstract

View articletitled, ZnSe p‐n junctions produced by metalorganic molecular‐beam epitaxy

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Characteristics of high‐temperature superconducting wires on the basis of YBa₂Cu₃O_x

J. Löhle; K. Mattenberger; O. Vogt; P. Wachter

J. Appl. Phys. 68, 882–884 (1990) https://doi.org/10.1063/1.346778

Abstract

View articletitled, Characteristics of high‐temperature superconducting wires on the basis of YBa2Cu3Ox

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Critical current measurements in YBa₂Cu₃O_7−x thin film grown on LaAlO₃ substrate

X. G. Qiu; C. G. Cui; Y. Z. Zhang; S. L. Li; Y. Y. Zhao; P. Xu; L. Li

J. Appl. Phys. 68, 884–886 (1990) https://doi.org/10.1063/1.346784

Abstract

View articletitled, Critical current measurements in YBa2Cu3O7−x thin film grown on LaAlO3 substrate

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α‐radiation‐induced deep levels in low‐doped n‐type silicon

N. Zafar; M. Zafar Iqbal

J. Appl. Phys. 68, 887–889 (1990) https://doi.org/10.1063/1.346752

Abstract

View articletitled, α‐radiation‐induced deep levels in low‐doped n‐type silicon

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An investigation of the microstructure of electroless Co‐alloy film

Zhihui Liu; Chen Yang; Yusheng He; Haoming Chen

J. Appl. Phys. 68, 889–891 (1990) https://doi.org/10.1063/1.347182

Abstract

View articletitled, An investigation of the microstructure of electroless Co‐alloy film

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Ohmic and radiation losses in superconducting films

L. Drabeck; K. Holczer; G. Grüner; D. J. Scalapino

J. Appl. Phys. 68, 892–894 (1990) https://doi.org/10.1063/1.346753

Abstract

View articletitled, Ohmic and radiation losses in superconducting films

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Some optical properties of infrared transmitting Bi‐Ca‐Sr‐Cu‐O glasses

Haixing Zheng; Patrick Lin; Ren Xu; J. D. Mackenzie

J. Appl. Phys. 68, 894–896 (1990) https://doi.org/10.1063/1.346754

Abstract

View articletitled, Some optical properties of infrared transmitting Bi‐Ca‐Sr‐Cu‐O glasses

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A plasma etching‐induced defect state in electron‐irradiated n‐type bulk section

F. P. Wang; H. H. Sun

J. Appl. Phys. 68, 897–899 (1990) https://doi.org/10.1063/1.346755

Abstract

View articletitled, A plasma etching‐induced defect state in electron‐irradiated n‐type bulk section

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Opto‐optical modulation in nematic liquid crystals

A. Sugimura; Y. Takahashi; H. Uda; H. Sonomura; H. Naito; M. Okuda

J. Appl. Phys. 68, 899–902 (1990) https://doi.org/10.1063/1.346756

Abstract

View articletitled, Opto‐optical modulation in nematic liquid crystals

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A photoluminescence study of hydrogenated GaAs grown on an InP substrate by metalorganic chemical vapor deposition

V. Swaminathan; U. K. Chakrabarti; W. S. Hobson; R. Caruso; J. Lopata; S. J. Pearton; H. S. Luftman

J. Appl. Phys. 68, 902–905 (1990) https://doi.org/10.1063/1.346757

Abstract

View articletitled, A photoluminescence study of hydrogenated GaAs grown on an InP substrate by metalorganic chemical vapor deposition

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Scanning tunneling microscopy bit making on highly oriented pyrolytic graphite: Initial results

Jimmie A. Miller; Robert J. Hocken

J. Appl. Phys. 68, 905–907 (1990) https://doi.org/10.1063/1.346732

Abstract

View articletitled, Scanning tunneling microscopy bit making on highly oriented pyrolytic graphite: Initial results

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The specific contact resistance of Ohmic contacts to HgTe/Hg_1−xCd_xTe heterostructures

Patrick W. Leech

J. Appl. Phys. 68, 907–909 (1990) https://doi.org/10.1063/1.346733

Abstract

View articletitled, The specific contact resistance of Ohmic contacts to HgTe/Hg1−xCdxTe heterostructures

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