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Volume 68, Issue 11
1 December 1990
Journal of Applied Physics Cover Image for Volume 68, Issue 11
All Issues
ISSN 0021-8979
EISSN 1089-7550
Two‐dimensional analysis of microbolometer arrays
E. N. Grossman; D. G. McDonald; J. E. Sauvageau
J. Appl. Phys. 68, 5409–5414 (1990) https://doi.org/10.1063/1.346996
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Thermal energy charge transfer in the Zn‐Ar system
Y. Tamir; R. Shuker
J. Appl. Phys. 68, 5415–5421 (1990) https://doi.org/10.1063/1.346997
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Novel target configurations for selective ionization state studies in molybdenum
K. J. Ilcisin; U. Feldman; J. L. Schwob; A. Wouters; S. Suckewer
J. Appl. Phys. 68, 5422–5427 (1990) https://doi.org/10.1063/1.347192
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Energy analysis of neutral atoms in broad oxygen ion beams by Doppler‐shift measurements
F. Heinrich; H.‐P. Stoll; H.‐C. Scheer; P. Hoffmann
J. Appl. Phys. 68, 5428–5434 (1990) https://doi.org/10.1063/1.346998
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Impedance and emission properties of capacitively coupled Hg‐Ar discharges
C. Beneking
J. Appl. Phys. 68, 5435–5446 (1990) https://doi.org/10.1063/1.346999
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Experimental study of optical waveguides with absorption induced by metallic electrodes
G. N. Djanta; J. L. Coutaz
J. Appl. Phys. 68, 5447–5450 (1990) https://doi.org/10.1063/1.347000
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A computational model of a dual‐wavelength solid‐state laser
George A. Henderson
J. Appl. Phys. 68, 5451–5455 (1990) https://doi.org/10.1063/1.347001
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Fractal surface scattering: A generalized Rayleigh solution
Dwight L. Jaggard; Xiaoguang Sun
J. Appl. Phys. 68, 5456–5462 (1990) https://doi.org/10.1063/1.347002
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Fabrication of low‐loss zinc‐selenide coated silver hollow waveguides for CO2 laser light
Yuji Matsuura; Mitsunobu Miyagi; Akihito Hongo
J. Appl. Phys. 68, 5463–5466 (1990) https://doi.org/10.1063/1.347003
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Comparison of YAG:Er and YAlO3:Er laser crystals emitting near 2.9 μm
S. Wüthrich; W. Lüthy; H. P. Weber
J. Appl. Phys. 68, 5467–5471 (1990) https://doi.org/10.1063/1.347004
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Temperature variation of elastic nonlinearity of NaCl
Wenhwa Jiang; M. A. Breazeale
J. Appl. Phys. 68, 5472–5477 (1990) https://doi.org/10.1063/1.347005
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Hyperbolic heat conduction due to axisymmetric continuous or pulsed surface heat sources
W. S. Kim; L. G. Hector, Jr.; M. N. Özisik
J. Appl. Phys. 68, 5478–5485 (1990) https://doi.org/10.1063/1.347006
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Effective conductivity of hard‐sphere dispersions
C. A. Miller; S. Torquato
J. Appl. Phys. 68, 5486–5493 (1990) https://doi.org/10.1063/1.347007
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Multiple scattering of electrons in the reflex triode
John M. Creedon
J. Appl. Phys. 68, 5494–5506 (1990) https://doi.org/10.1063/1.347008
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Investigation of the creation process in dc pulsed discharges
A. Dengra; J. Ballesteros; M. A. Hernández; V. Colomer
J. Appl. Phys. 68, 5507–5510 (1990) https://doi.org/10.1063/1.347009
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An extreme ultraviolet spectroscopic diagnostic for fluctuations of electron density and temperature in tokamak plasmas
L. K. Huang; M. Finkenthal; A. K. Bhatia; H. W. Moos
J. Appl. Phys. 68, 5511–5518 (1990) https://doi.org/10.1063/1.347010
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rf modulation of positive‐ion energies in low‐pressure discharges
S. G. Ingram; N. St. J. Braithwaite
J. Appl. Phys. 68, 5519–5527 (1990) https://doi.org/10.1063/1.347011
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Theoretical treatment of rf discharges in CO2 waveguide lasers
K. Schröder
J. Appl. Phys. 68, 5528–5531 (1990) https://doi.org/10.1063/1.347012
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Study of the structure in rf glow discharges in SiH4/H2 by spatiotemporal optical emission spectroscopy: Influence of negative ions
Fumiyoshi Tochikubo; Akira Suzuki; Shigeru Kakuta; Yuko Terazono; Toshiaki Makabe
J. Appl. Phys. 68, 5532–5539 (1990) https://doi.org/10.1063/1.347013
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Internal energy distributions in a shielded plasma device
Mitchell Trkula; N. S. Nogar; G. L. Keaton; J. E. Anderson
J. Appl. Phys. 68, 5540–5548 (1990) https://doi.org/10.1063/1.347014
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Surface order transition in nematic liquid crystals induced by the flexoelectric polarization
G. Barbero; G. Durand
J. Appl. Phys. 68, 5549–5554 (1990) https://doi.org/10.1063/1.347015
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Annealing characteristics and electrical properties of 1‐MeV arsenic‐ion‐implanted layers in silicon
T. Inada; A. Nishida; M. Kanazawa; H. Hasebe
J. Appl. Phys. 68, 5555–5563 (1990) https://doi.org/10.1063/1.347193
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Boron ion implantation in p‐type Hg0.8Cd0.2Te
R. Kumar; M. B. Dutt; R. Nath; R. Chander; S. C. Gupta
J. Appl. Phys. 68, 5564–5566 (1990) https://doi.org/10.1063/1.347016
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Properties of polycrystalline ZnSe thin films grown by ion‐beam deposition
Akio Kuroyanagi
J. Appl. Phys. 68, 5567–5570 (1990) https://doi.org/10.1063/1.346991
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Impurity effect on the creation of Ga vacancies in a Si‐doped layer grown on Be‐doped GaAs by molecular‐beam epitaxy
Jong‐Lam Lee; Long Wei; Shoichiro Tanigawa; Mitsuo Kawabe
J. Appl. Phys. 68, 5571–5575 (1990) https://doi.org/10.1063/1.346992
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Synchrotron‐radiation‐induced decomposition of thin native oxide films on Si(100)
Michio Niwano; Hitoshi Katakura; Yuji Takakuwa; Nobuo Miyamoto
J. Appl. Phys. 68, 5576–5583 (1990) https://doi.org/10.1063/1.346993
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Raman spectra of Si‐implanted GaSb
Y. K. Su; K. J. Gan; J. S. Hwang; S. L. Tyan
J. Appl. Phys. 68, 5584–5587 (1990) https://doi.org/10.1063/1.346994
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Suppression of the dominant recombination center in n‐type GaAs by proximity annealing of wafers
D. Wong; T. E. Schlesinger; A. G. Milnes
J. Appl. Phys. 68, 5588–5594 (1990) https://doi.org/10.1063/1.346995
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Influence of growth interruption on inverted interface quality in single AlAs‐GaAs quantum wells grown by molecular beam epitaxy
J. Zhang; P. Dawson; J. H. Neave; K. J. Hugill; I. Galbraith; P. N. Fawcett; B. A. Joyce
J. Appl. Phys. 68, 5595–5600 (1990) https://doi.org/10.1063/1.346970
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Acoustic quality factor of aluminum alloys from 50 mK to 300 K
William Duffy, Jr.
J. Appl. Phys. 68, 5601–5609 (1990) https://doi.org/10.1063/1.346971
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Influence of ball‐forming conditions on the hardness of copper balls
J. Onuki; M. Koizumi; H. Suzuki; I. Araki; T. Iizuka
J. Appl. Phys. 68, 5610–5614 (1990) https://doi.org/10.1063/1.346972
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Layer intermixing in heavily carbon‐doped AlGaAs/GaAs superlattices
I. Szafranek; M. Szafranek; B. T. Cunningham; L. J. Guido; N. Holonyak, Jr.; G. E. Stillman
J. Appl. Phys. 68, 5615–5620 (1990) https://doi.org/10.1063/1.346973
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Raman analysis of anodic films on mercury cadmium telluride
I. R. Hill; W. H. Chang; W. M Lau
J. Appl. Phys. 68, 5621–5624 (1990) https://doi.org/10.1063/1.347191
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Mechanisms controlling temperature dependent mechanical and electrical behavior of SiH4 reduced chemically vapor deposited W
R. V. Joshi; V. Prasad; L. Krusin‐Elbaum; M. Yu; M. Norcott
J. Appl. Phys. 68, 5625–5629 (1990) https://doi.org/10.1063/1.346974
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Comparative optical investigations of ZnSe/GaAs epilayers grown by molecular beam and hot‐wall epitaxy
G. Kudlek; N. Presser; J. Gutowski; K. Hingerl; H. Sitter; S. M. Durbin; D. R. Menke; M. Kobayashi; R. L. Gunshor
J. Appl. Phys. 68, 5630–5635 (1990) https://doi.org/10.1063/1.346975
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A combination of rapid thermal processing and photochemical deposition for the growth of SiO2 suitable for InP device applications
C. Licoppe; F. Wattine; C. Meriadec; J. Flicstein; Y. I. Nissim
J. Appl. Phys. 68, 5636–5640 (1990) https://doi.org/10.1063/1.346976
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Amorphization and regrowth in Si/CoSi2/Si heterostructures
Karen Maex; Alice E. White; K. T. Short; Yong‐Fen Hsieh; R. Hull; J. W. Osenbach; H. C. Praefcke
J. Appl. Phys. 68, 5641–5647 (1990) https://doi.org/10.1063/1.346977
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Pulsed laser deposition of diamondlike hydrogenated amorphous carbon films
A. P. Malshe; S. M. Kanetkar; S. B. Ogale; S. T. Kshirsagar
J. Appl. Phys. 68, 5648–5652 (1990) https://doi.org/10.1063/1.346978
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Sb doping and electrical characteristics of ultrathin SinGem superlattices
H. Presting; H. Kibbel; E. Kasper; H. Jorke
J. Appl. Phys. 68, 5653–5659 (1990) https://doi.org/10.1063/1.346979
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Comparative study of self‐limiting growth of GaAs using different Ga‐alkyl compounds: (CH3)3Ga, C2H5(CH3)2Ga, and (C2H5)3Ga
Y. Sakuma; M. Ozeki; N. Ohtsuka; K. Kodama
J. Appl. Phys. 68, 5660–5664 (1990) https://doi.org/10.1063/1.346980
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Properties of diamond membranes for x‐ray lithography
Henry Windischmann; Glenn F. Epps
J. Appl. Phys. 68, 5665–5673 (1990) https://doi.org/10.1063/1.346981
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Epitaxial growth of ZnS grown at low temperatures by atmospheric pressure metalorganic vapor phase epitaxy
Tokuo Yodo; Kazuhiro Ueda; Kenji Morio; Ken Yamashita; Shuhei Tanaka
J. Appl. Phys. 68, 5674–5681 (1990) https://doi.org/10.1063/1.346982
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Hole transport in mixtures of 1,1‐bis(di‐4‐tolylaminophenyl) cyclohexane and bisphenol‐A‐polycarbonate
P. M. Borsenberger
J. Appl. Phys. 68, 5682–5686 (1990) https://doi.org/10.1063/1.346983
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Anisotropy of piezoresistance in n‐channel inversion layers of metal‐oxide‐semiconductor transistors on (001)Si
T. Maruyama; S. Zaima; Y. Koide; Y. Kanda; Y. Yasuda
J. Appl. Phys. 68, 5687–5691 (1990) https://doi.org/10.1063/1.346984
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Orientation analysis of the anisotropic galvanomagnetism of sintered Bi2Te3
Isao J. Ohsugi; Tsutomu Kojima; Isao A. Nishida
J. Appl. Phys. 68, 5692–5695 (1990) https://doi.org/10.1063/1.346985
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Formation and behavior of BGaVAs complex defects in gallium arsenide grown by liquid‐encapsulated Czochralski method
Fumio Orito; Katsushi Fujii; Yasumasa Okada
J. Appl. Phys. 68, 5696–5699 (1990) https://doi.org/10.1063/1.346986
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Thermally stimulated current studies of bismuth silicon oxide crystal. II. Trapping kinetics
Takeshi Takamori; Dieter Just
J. Appl. Phys. 68, 5700–5703 (1990) https://doi.org/10.1063/1.346987
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High frequency noise and the diffusion coefficient of an AlGaAs/GaAs heterostructure device with a square potential well
Arthur D. van Rheenen; Gijs Bosman; Hadis Morkoç
J. Appl. Phys. 68, 5704–5708 (1990) https://doi.org/10.1063/1.346988
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Comparison and origin of electronic states of the free GaAs (100) surface and the GaAs/CaF2 interface
A. Bousetta; W. S. Truscott
J. Appl. Phys. 68, 5709–5713 (1990) https://doi.org/10.1063/1.346989
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Nonspiking ohmic contact to p‐GaAs by solid‐phase regrowth
C. C. Han; X. Z. Wang; L. C. Wang; E. D. Marshall; S. S. Lau; S. A. Schwarz; C. J. Palmstro/m; J. P. Harbison; L. T. Florez; R. M. Potemski; M. A. Tischler; T. F. Kuech
J. Appl. Phys. 68, 5714–5718 (1990) https://doi.org/10.1063/1.346990
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Formation and properties of In‐doped high‐conductivity CdSe evaporated film
Toshiya Hayashi; Ryo Saeki; Tatsuro Suzuki; Mitsuru Fukaya; Yoshinori Ema
J. Appl. Phys. 68, 5719–5723 (1990) https://doi.org/10.1063/1.346965
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Change in density of states in a resonant tunneling structure due to a scattering center in the well
L. N. Pandey; Thomas F. George; M. L. Rustgi; D. Sahu
J. Appl. Phys. 68, 5724–5728 (1990) https://doi.org/10.1063/1.346966
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Dynamics of a nonautonomous sine‐Gordon system modeling long Josephson junctions
M. Cirillo
J. Appl. Phys. 68, 5729–5734 (1990) https://doi.org/10.1063/1.346967
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Electrical properties of grain boundaries in Ba1−xKxBiO3 polycrystalline thin films
Youichi Enomoto; Kazuyuki Moriwaki; Keiichi Tanabe
J. Appl. Phys. 68, 5735–5740 (1990) https://doi.org/10.1063/1.346968
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Duality and fluxonics in superconducting devices
A. M. Kadin
J. Appl. Phys. 68, 5741–5749 (1990) https://doi.org/10.1063/1.346969
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Origin of grain boundary weak links in BaPb1−xBixO3 superconductor
T. Takagi; Y.‐M. Chiang; A. Roshko
J. Appl. Phys. 68, 5750–5758 (1990) https://doi.org/10.1063/1.346943
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Hysteresis properties of ultrathin ferromagnetic films
P. Bruno; G. Bayreuther; P. Beauvillain; C. Chappert; G. Lugert; D. Renard; J. P. Renard; J. Seiden
J. Appl. Phys. 68, 5759–5766 (1990) https://doi.org/10.1063/1.346944
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A microstructure based magnetization reversal model in sintered Fe‐Nd‐B magnets. I
R. Ramesh
J. Appl. Phys. 68, 5767–5771 (1990) https://doi.org/10.1063/1.346945
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A microstructure based magnetization reversal model in sintered Fe‐Nd‐B magnets. II. Effect of post sintering treatments
R. Ramesh
J. Appl. Phys. 68, 5772–5777 (1990) https://doi.org/10.1063/1.346946
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Magnetic properties of Fe‐based superlattices and sandwiches
C. Sellers; J. E. Hilliard; J. B. Ketterson
J. Appl. Phys. 68, 5778–5782 (1990) https://doi.org/10.1063/1.346947
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Fatigue and switching in ferroelectric memories: Theory and experiment
H. M. Duiker; P. D. Beale; J. F. Scott; C. A. Paz de Araujo; B. M. Melnick; J. D. Cuchiaro; L. D. McMillan
J. Appl. Phys. 68, 5783–5791 (1990) https://doi.org/10.1063/1.346948
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The influence of spontaneous electrochemical effects on dielectric measurements
Gervais Leclerc; Louis Paquin; M. R. Wertheimer; A. Yelon
J. Appl. Phys. 68, 5792–5795 (1990) https://doi.org/10.1063/1.346949
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Photoluminescence spectroscopy of CdTe epilayers grown by rf magnetron sputtering
S. R. Das; J. G. Cook; N. L. Rowell; M. S. Aouadi
J. Appl. Phys. 68, 5796–5803 (1990) https://doi.org/10.1063/1.346950
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Optical properties of reduced lithium niobate single crystals
Ajay Dhar; Abhai Mansingh
J. Appl. Phys. 68, 5804–5809 (1990) https://doi.org/10.1063/1.346951
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Nondestructive characterization of silicon‐on‐insulator structures using infrared spectroscopic ellipsometry
F. Ferrieu; D. Dutartre
J. Appl. Phys. 68, 5810–5813 (1990) https://doi.org/10.1063/1.346952
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Two‐photon volume information storage in doped polymer systems
D. A. Parthenopoulos; P. M. Rentzepis
J. Appl. Phys. 68, 5814–5818 (1990) https://doi.org/10.1063/1.346953
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Tabulation of the theoretical band‐to‐band luminescence spectra of heavily doped GaAs and application to experimental n‐type GaAs spectra
R. Visser; H. G. M. Lochs; L. J. Giling
J. Appl. Phys. 68, 5819–5826 (1990) https://doi.org/10.1063/1.346954
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X‐ray photoemission studies of reactions of arsine with platinum, palladium, and nickel metals and metal oxides
T. T. P. Cheung
J. Appl. Phys. 68, 5827–5834 (1990) https://doi.org/10.1063/1.346955
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Determination of spin‐polarized secondary‐electron escape depth through oxidation of iron
T. VanZandt; R. Browning
J. Appl. Phys. 68, 5835–5839 (1990) https://doi.org/10.1063/1.346956
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Micromechanical fracture strength of silicon
Fredric Ericson; Jan‐Åke Schweitz
J. Appl. Phys. 68, 5840–5844 (1990) https://doi.org/10.1063/1.346957
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On the calculation of the electromagnetic force field in the circular stirring of metallic melts
N. Saluja; O. J. Ilegbusi; J. Szekely
J. Appl. Phys. 68, 5845–5850 (1990) https://doi.org/10.1063/1.346958
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Mechanism of rapid thermal nitridation of thin oxides
D. K. Shih; A. B. Joshi; D. L. Kwong
J. Appl. Phys. 68, 5851–5855 (1990) https://doi.org/10.1063/1.346959
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A thermionic energy converter with a molybdenum‐alumina cermet emitter
G. H. M. Gubbels; L. R. Wolff; R. Metselaar
J. Appl. Phys. 68, 5856–5865 (1990) https://doi.org/10.1063/1.346960
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Hydrogenation of Si‐ and Be‐doped InGaP
J. M. Dallesasse; I. Szafranek; J. N. Baillargeon; N. El‐Zein; N. Holonyak, Jr.; G. E. Stillman; K. Y. Cheng
J. Appl. Phys. 68, 5866–5870 (1990) https://doi.org/10.1063/1.346961
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Hydrogenation‐defined stripe‐geometry In0.5(AlxGa1−x)0.5P quantum‐well lasers
J. M. Dallesasse; N. El‐Zein; N. Holonyak, Jr.; R. M. Fletcher; C. P. Kuo; T. D. Osentowski; M. G. Craford
J. Appl. Phys. 68, 5871–5873 (1990) https://doi.org/10.1063/1.346962
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On the bandwidth of a short traveling wave tube
Levi Schächter; John A. Nation; Graham Kerslick
J. Appl. Phys. 68, 5874–5882 (1990) https://doi.org/10.1063/1.346963
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Computerized tomographic imaging for space plasma physics
Yuhong Zhang; Michael A. Coplan; John H. Moore; Carlos A. Berenstein
J. Appl. Phys. 68, 5883–5889 (1990) https://doi.org/10.1063/1.346964
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Temperature dependence of intersubband absorption in InGaAs/InAlAs multiquantum wells
Hiromitsu Asai; Yuichi Kawamura
J. Appl. Phys. 68, 5890–5892 (1990) https://doi.org/10.1063/1.346936
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Growth of (100) Al/Fe and Fe/Al/Fe layers using the technique of metal‐metal epitaxy on silicon
Chin‐An Chang
J. Appl. Phys. 68, 5893–5895 (1990) https://doi.org/10.1063/1.346937
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Effect of light soaking on the short‐wavelength photoresponse in hydrogenated amorphous silicon
Sukriti Ghosh; Gautam Ganguly
J. Appl. Phys. 68, 5896–5898 (1990) https://doi.org/10.1063/1.346938
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Two‐phase structure of plasma‐polymerized thiophene‐passivated GaAs Schottky‐like metal‐insulator‐semiconductor diodes
Zs. J. Horváth
J. Appl. Phys. 68, 5899–5901 (1990) https://doi.org/10.1063/1.346939
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Thin‐film Al/diamond Schottky diode over 400‐V breakdown voltage
David G. Jeng; H. S. Tuan; Robert F. Salat; Glenn J. Fricano
J. Appl. Phys. 68, 5902–5904 (1990) https://doi.org/10.1063/1.346940
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Independence of peak current from emitter spacer layer width in AlGaAs/GaAs resonant tunneling diodes
E. T. Koenig; C. I. Huang; B. Jogai
J. Appl. Phys. 68, 5905–5907 (1990) https://doi.org/10.1063/1.347190
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Preparation of high‐density YBa2Cu3Ox ceramics with improved superconducting properties by hot pressing under controlled atmosphere
M. Kuwabara; H. Shimooka
J. Appl. Phys. 68, 5908–5910 (1990) https://doi.org/10.1063/1.346941
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Effects of using the more accurate intrinsic concentration on bipolar transistor modeling
J. J. Liou; J. S. Yuan; W. W. Wong
J. Appl. Phys. 68, 5911–5912 (1990) https://doi.org/10.1063/1.346942
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Thermoelastic attenuation of surface‐acoustic waves in coated elastic media
A. P. Mayer
J. Appl. Phys. 68, 5913–5915 (1990) https://doi.org/10.1063/1.346917
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Interimpurity transitions in heavily doped semiconductors
S. H. Park; B. D. Choe
J. Appl. Phys. 68, 5916–5918 (1990) https://doi.org/10.1063/1.346918
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Phonon‐drag thermopower in semiconducting quantum well structures in a quantizing magnetic field
N. S. Sankeshwar; S. S. Kubakaddi; B. G. Mulimani; P. N. Butcher
J. Appl. Phys. 68, 5919–5921 (1990) https://doi.org/10.1063/1.346919
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Large subband spacings in δ‐doped quantum wires
G. L. Snider; I.‐H. Tan; E. L. Hu
J. Appl. Phys. 68, 5922–5924 (1990) https://doi.org/10.1063/1.346920
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Modeling AlxGa1−xAs optical constants as functions of composition
Paul G. Snyder; John A. Woollam; Samuel A. Alterovitz; Blaine Johs
J. Appl. Phys. 68, 5925–5926 (1990) https://doi.org/10.1063/1.346921
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2.5 kHz high repetition rate XeCl excimer laser
S. Takagi; N. Okamoto; K. Kakizaki; S. Sato; T. Goto
J. Appl. Phys. 68, 5927–5929 (1990) https://doi.org/10.1063/1.346922
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Probe beam heating of AlGaAs single‐quantum‐well laser facets in Raman microprobe spectroscopy
W. C. Tang; H. J. Rosen; P. Buchmann; P. Vettiger; D. Webb
J. Appl. Phys. 68, 5930–5932 (1990) https://doi.org/10.1063/1.346923
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Is Tc(P) for lead suitable as a low‐temperature manometer?
J. Thomasson; C. Ayache; I. L. Spain; M. Villedieu
J. Appl. Phys. 68, 5933–5935 (1990) https://doi.org/10.1063/1.346924
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2.5 μm GaInAsSb lattice‐matched to GaSb by liquid phase epitaxy
E. Tournié; J.‐L. Lazzari; F. Pitard; C. Alibert; A. Joullié; B. Lambert
J. Appl. Phys. 68, 5936–5938 (1990) https://doi.org/10.1063/1.346925
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BiPbSrCaCuO superconductors prepared by the multiple pressing and sintering process
Weiguo Wang; Meiling Zhou; Tieyong Zuo; Jian Huang; Jianguo Cai; Xianghua Zhou; Qin Wei
J. Appl. Phys. 68, 5939–5940 (1990) https://doi.org/10.1063/1.346926
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Diamond growth in combustion flames
R. S. Yalamanchi; K. S. Harshavardhan
J. Appl. Phys. 68, 5941–5943 (1990) https://doi.org/10.1063/1.346927
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