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Lithium niobate stress gauge current diagnostic for noninductive measurement of fast‐rise‐time multimegampere currents

D. L. Hanson; R. R. Williams; J. L. Porter; R. B. Spielman; M. K. Matzen

J. Appl. Phys. 68, 4917–4928 (1990) https://doi.org/10.1063/1.347077

View articletitled, Lithium niobate stress gauge current diagnostic for noninductive measurement of fast‐rise‐time multimegampere currents

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High‐γ inverse Čerenkov acceleration in resonant media

L. C. Steinhauer; W. D. Kimura

J. Appl. Phys. 68, 4929–4936 (1990) https://doi.org/10.1063/1.347195

Abstract

View articletitled, High‐γ inverse Čerenkov acceleration in resonant media

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Low‐energy elastic scattering of electrons by bound silicon and germanium atoms

R. J. Meredith; W. Williamson, Jr.; V. J. Montemayor; N. Öztürk; A. J. Antolak

J. Appl. Phys. 68, 4937–4941 (1990) https://doi.org/10.1063/1.347078

Abstract

View articletitled, Low‐energy elastic scattering of electrons by bound silicon and germanium atoms

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Modal analysis of wake fields and its application to elliptical pill‐box cavity with finite aperture

S. H. Kim; K. W. Chen; J. S. Yang

J. Appl. Phys. 68, 4942–4951 (1990) https://doi.org/10.1063/1.347079

Abstract

View articletitled, Modal analysis of wake fields and its application to elliptical pill‐box cavity with finite aperture

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Dependent scattering of an obliquely incident plane wave by a collection of parallel cylinders

Siu‐Chun Lee

J. Appl. Phys. 68, 4952–4957 (1990) https://doi.org/10.1063/1.347080

Abstract

View articletitled, Dependent scattering of an obliquely incident plane wave by a collection of parallel cylinders

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Electron‐beam confinement by rotational stabilization in a linear wiggler free electron laser

L. Friedland; R. E. Shefer

J. Appl. Phys. 68, 4958–4963 (1990) https://doi.org/10.1063/1.347081

Abstract

View articletitled, Electron‐beam confinement by rotational stabilization in a linear wiggler free electron laser

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Simulation studies of silicon electro‐optic waveguide devices

Stephen R. Giguere; Lionel Friedman; Richard A. Soref; Joseph P. Lorenzo

J. Appl. Phys. 68, 4964–4970 (1990) https://doi.org/10.1063/1.347082

Abstract

View articletitled, Simulation studies of silicon electro‐optic waveguide devices

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Path integral simulation of polarized solitons in optical fibers

K. Hayata; K. Saka; M. Koshiba

J. Appl. Phys. 68, 4971–4982 (1990) https://doi.org/10.1063/1.347083

Abstract

View articletitled, Path integral simulation of polarized solitons in optical fibers

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A model for a continuous‐wave iodine laser

In Heon Hwang; Bagher M. Tabibi

J. Appl. Phys. 68, 4983–4989 (1990) https://doi.org/10.1063/1.347084

Abstract

View articletitled, A model for a continuous‐wave iodine laser

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Phase matched noncollinear second harmonic generation in 2‐methyl‐4‐nitroaniline single‐crystal film waveguide

O. Sugihara; S. Kai; K. Uwatoko; T. Kinoshita; K. Sasaki

J. Appl. Phys. 68, 4990–4992 (1990) https://doi.org/10.1063/1.347085

Abstract

View articletitled, Phase matched noncollinear second harmonic generation in 2‐methyl‐4‐nitroaniline single‐crystal film waveguide

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Acoustic fields and velocities for surface‐acoustic‐wave propagation in multilayered structures: An extension of the Laguerre polynomial approach

Yoonkee Kim; William D. Hunt

J. Appl. Phys. 68, 4993–4997 (1990) https://doi.org/10.1063/1.347086

Abstract

View articletitled, Acoustic fields and velocities for surface‐acoustic‐wave propagation in multilayered structures: An extension of the Laguerre polynomial approach

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Forced thickness‐extensional trapped energy vibrations of polarized ceramic plates

D. V. Shick; H. F. Tiersten; B. K. Sinha

J. Appl. Phys. 68, 4998–5008 (1990) https://doi.org/10.1063/1.347087

Abstract

View articletitled, Forced thickness‐extensional trapped energy vibrations of polarized ceramic plates

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An analysis of thickness‐extensional trapped energy mode polarized ceramic transducers

D. V. Shick; H. F. Tiersten

J. Appl. Phys. 68, 5009–5015 (1990) https://doi.org/10.1063/1.347088

Abstract

View articletitled, An analysis of thickness‐extensional trapped energy mode polarized ceramic transducers

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Time‐dependent collisional‐radiative model for quantitative study of nonequilibrium plasma

M. E. Foord; Y. Maron; E. Sarid

J. Appl. Phys. 68, 5016–5027 (1990) https://doi.org/10.1063/1.347089

Abstract

View articletitled, Time‐dependent collisional‐radiative model for quantitative study of nonequilibrium plasma

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Treatment of ionization in plasma collisional‐radiative calculations

M. E. Foord; E. Nardi

J. Appl. Phys. 68, 5028–5032 (1990) https://doi.org/10.1063/1.347196

Abstract

View articletitled, Treatment of ionization in plasma collisional‐radiative calculations

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Study of a cesium plasma as a selective emitter for thermophotovoltaic applications

R. Lowe; C. Goradia; M. Goradia; Donald L. Chubb

J. Appl. Phys. 68, 5033–5035 (1990) https://doi.org/10.1063/1.347090

Abstract

View articletitled, Study of a cesium plasma as a selective emitter for thermophotovoltaic applications

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Numerical modeling of effects of power imbalance on irradiation nonuniformities

P. W. McKenty; C. P. Verdon; S. Skupsky; R. L. McCrory; D. K. Bradley; W. Seka; P. A. Jaanimagi

J. Appl. Phys. 68, 5036–5043 (1990) https://doi.org/10.1063/1.347091

Abstract

View articletitled, Numerical modeling of effects of power imbalance on irradiation nonuniformities

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Electrical conductivity and thermodynamic functions of weakly nonideal plasma

R. B. Mohanti; J. G. Gilligan

J. Appl. Phys. 68, 5044–5051 (1990) https://doi.org/10.1063/1.347092

Abstract

View articletitled, Electrical conductivity and thermodynamic functions of weakly nonideal plasma

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Analysis of a low‐pressure mercury rare‐gas positive column with a dynamic two‐temperature representation of electron energy

Koichi Wani

J. Appl. Phys. 68, 5052–5058 (1990) https://doi.org/10.1063/1.347067

Abstract

View articletitled, Analysis of a low‐pressure mercury rare‐gas positive column with a dynamic two‐temperature representation of electron energy

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Characteristics of x‐ray radiation by a nonequilibrium energetic electron flow emerged from a formed ferrite filament

K. Watanabe; K. Furusho; S. Kashiwabara; R. Fujimoto

J. Appl. Phys. 68, 5059–5063 (1990) https://doi.org/10.1063/1.347068

Abstract

View articletitled, Characteristics of x‐ray radiation by a nonequilibrium energetic electron flow emerged from a formed ferrite filament

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Vacancy formation and extraction energies in semiconductor compounds and alloys

M. A. Berding; A. Sher; A.‐B. Chen

J. Appl. Phys. 68, 5064–5076 (1990) https://doi.org/10.1063/1.347069

Abstract

View articletitled, Vacancy formation and extraction energies in semiconductor compounds and alloys

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Electric‐field‐enhanced dissociation of the hydrogen‐Si donor complex in GaAs

Hoon Young Cho; Eun Kyu Kim; Suk‐Ki Min; K. J. Chang; Choochon Lee

J. Appl. Phys. 68, 5077–5080 (1990) https://doi.org/10.1063/1.347070

Abstract

View articletitled, Electric‐field‐enhanced dissociation of the hydrogen‐Si donor complex in GaAs

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Secondary defect evolution in ion‐implanted silicon

P. I. Gaiduk; A. Nylandsted Larsen

J. Appl. Phys. 68, 5081–5089 (1990) https://doi.org/10.1063/1.347071

Abstract

View articletitled, Secondary defect evolution in ion‐implanted silicon

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Residual defects in AlGaAs co‐implanted with Be and P or As

R. Magno; R. Shelby; B. Molnar

J. Appl. Phys. 68, 5090–5094 (1990) https://doi.org/10.1063/1.347072

Abstract

View articletitled, Residual defects in AlGaAs co‐implanted with Be and P or As

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Radiation‐induced frequency offsets and acoustic loss in AT‐cut quartz crystals

J. J. Martin

J. Appl. Phys. 68, 5095–5104 (1990) https://doi.org/10.1063/1.347046

Abstract

View articletitled, Radiation‐induced frequency offsets and acoustic loss in AT‐cut quartz crystals

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X‐ray reflectivity of an Sb delta‐doping layer in silicon

W. F. J. Slijkerman; J. M. Gay; P. M. Zagwijn; J. F. van der Veen; J. E. Macdonald; A. A. Williams; D. J. Gravesteijn; G. F. A. van de Walle

J. Appl. Phys. 68, 5105–5108 (1990) https://doi.org/10.1063/1.347047

Abstract

View articletitled, X‐ray reflectivity of an Sb delta‐doping layer in silicon

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Line tension of extended double kinks in thin films

M. E. Twigg

J. Appl. Phys. 68, 5109–5114 (1990) https://doi.org/10.1063/1.347048

Abstract

View articletitled, Line tension of extended double kinks in thin films

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Transmission electron microscopy investigation of dislocation bending by GaAsP/GaAs strained‐layer superlattices on heteroepitaxial GaAs/Si

J. S. Whelan; T. George; E. R. Weber; S. Nozaki; A. T. Wu; M. Umeno

J. Appl. Phys. 68, 5115–5118 (1990) https://doi.org/10.1063/1.347049

Abstract

View articletitled, Transmission electron microscopy investigation of dislocation bending by GaAsP/GaAs strained‐layer superlattices on heteroepitaxial GaAs/Si

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Ultrasonic second harmonic generation in various crystalline systems. II. Piezoelectric materials: Coupling parameters in terms of elastic and piezoelectric moduli and propagation directions

D. Gerlich; M. A. Breazeale

J. Appl. Phys. 68, 5119–5124 (1990) https://doi.org/10.1063/1.347050

Abstract

View articletitled, Ultrasonic second harmonic generation in various crystalline systems. II. Piezoelectric materials: Coupling parameters in terms of elastic and piezoelectric moduli and propagation directions

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Thermal conductivity of GaSb and InSb in solid and liquid states

Shin Nakamura; Taketoshi Hibiya; Fumio Yamamoto

J. Appl. Phys. 68, 5125–5127 (1990) https://doi.org/10.1063/1.347051

Abstract

View articletitled, Thermal conductivity of GaSb and InSb in solid and liquid states

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Improved analysis of ionic conductivity relaxation using the electric modulus with a Cole–Davidson distribution

K. Pathmanathan; J. R. Stevens

J. Appl. Phys. 68, 5128–5132 (1990) https://doi.org/10.1063/1.347052

Abstract

View articletitled, Improved analysis of ionic conductivity relaxation using the electric modulus with a Cole–Davidson distribution

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Oxidation of titanium, manganese, iron, and niobium silicides: Marker experiments

L. Stolt; O. Thomas; F. M. d’Heurle

J. Appl. Phys. 68, 5133–5139 (1990) https://doi.org/10.1063/1.347053

Abstract

View articletitled, Oxidation of titanium, manganese, iron, and niobium silicides: Marker experiments

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Electron beam defined delamination and ablation of carbon‐diamond thin films on silicon

Gehan A. J. Amaratunga; Mark E. Welland

J. Appl. Phys. 68, 5140–5145 (1990) https://doi.org/10.1063/1.347054

Abstract

View articletitled, Electron beam defined delamination and ablation of carbon‐diamond thin films on silicon

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Thermal evolution of X/C multilayers (with X=W, Ni, or SiWSi): A systematic study

V. Dupuis; M. F. Ravet; C. Tête; M. Piecuch; Y. Lepêtre; R. Rivoira; E. Ziegler

J. Appl. Phys. 68, 5146–5154 (1990) https://doi.org/10.1063/1.347055

Abstract

View articletitled, Thermal evolution of X/C multilayers (with X=W, Ni, or SiWSi): A systematic study

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Oxidation of HF‐treated Si wafer surfaces in air

D. Gräf; M. Grundner; R. Schulz; L. Mühlhoff

J. Appl. Phys. 68, 5155–5161 (1990) https://doi.org/10.1063/1.347056

Abstract

View articletitled, Oxidation of HF‐treated Si wafer surfaces in air

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Structural stability of heat‐treated W/C and W/B₄C multilayers

A. F. Jankowski; L. R. Schrawyer; M. A. Wall

J. Appl. Phys. 68, 5162–5168 (1990) https://doi.org/10.1063/1.347057

Abstract

View articletitled, Structural stability of heat‐treated W/C and W/B4C multilayers

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Formation of MoS₂ phase in Al₂O₃, ZrO₂, and SiO₂ through ion implantation of constituent elements

A. K. Rai; R. S. Bhattacharya; S. C. Kung

J. Appl. Phys. 68, 5169–5175 (1990) https://doi.org/10.1063/1.347058

Abstract

View articletitled, Formation of MoS2 phase in Al2O3, ZrO2, and SiO2 through ion implantation of constituent elements

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Reactively sputtered TiN as a diffusion barrier between Cu and Si

Shi‐Qing Wang; Ivo Raaijmakers; Brad J. Burrow; Sailesh Suthar; Shailesh Redkar; Ki‐Bum Kim

J. Appl. Phys. 68, 5176–5187 (1990) https://doi.org/10.1063/1.347059

Abstract

View articletitled, Reactively sputtered TiN as a diffusion barrier between Cu and Si

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Hole transport in tri‐p‐tolylamine‐doped polymers

P. M. Borsenberger

J. Appl. Phys. 68, 5188–5194 (1990) https://doi.org/10.1063/1.347060

Abstract

View articletitled, Hole transport in tri‐p‐tolylamine‐doped polymers

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Minority‐carrier lifetime in p‐type (111)B HgCdTe grown by molecular‐beam epitaxy

M. E. de Souza; M. Boukerche; J. P. Faurie

J. Appl. Phys. 68, 5195–5199 (1990) https://doi.org/10.1063/1.347061

Abstract

View articletitled, Minority‐carrier lifetime in p‐type (111)B HgCdTe grown by molecular‐beam epitaxy

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Low‐frequency noise in small InGaAs/InP p‐i‐n diodes under different bias and illumination conditions

L. He; Y. Lin; A. D. van Rheenen; A. van der Ziel; A. Young; J. P. van der Ziel

J. Appl. Phys. 68, 5200–5204 (1990) https://doi.org/10.1063/1.347062

Abstract

View articletitled, Low‐frequency noise in small InGaAs/InP p‐i‐n diodes under different bias and illumination conditions

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Dynamics of electrons accelerated by strong uniform or weakly inhomogeneous electric fields in the presence of phonons

Satoshi Hinata

J. Appl. Phys. 68, 5205–5211 (1990) https://doi.org/10.1063/1.347063

Abstract

View articletitled, Dynamics of electrons accelerated by strong uniform or weakly inhomogeneous electric fields in the presence of phonons

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Spatial profiling of electron traps in silicon nitride thin films

Y. C. Park; W. B. Jackson; N. M. Johnson; S. B. Hagstrom

J. Appl. Phys. 68, 5212–5221 (1990) https://doi.org/10.1063/1.347064

Abstract

View articletitled, Spatial profiling of electron traps in silicon nitride thin films

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Current‐generated spatially periodic space charge in semiconductors

R. N. Zitter

J. Appl. Phys. 68, 5222–5225 (1990) https://doi.org/10.1063/1.347065

Abstract

View articletitled, Current‐generated spatially periodic space charge in semiconductors

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Observation of hysteresis, transients, and photoeffects in the electrical properties of ZnSe/GaAs heterojunctions

S. G. Ayyar; S. Colak; T. Marshall; B. Khan; D. Cammack

J. Appl. Phys. 68, 5226–5233 (1990) https://doi.org/10.1063/1.347066

Abstract

View articletitled, Observation of hysteresis, transients, and photoeffects in the electrical properties of ZnSe/GaAs heterojunctions

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Temperature dependence of trap creation in silicon dioxide

D. J. DiMaria

J. Appl. Phys. 68, 5234–5246 (1990) https://doi.org/10.1063/1.347040

Abstract

View articletitled, Temperature dependence of trap creation in silicon dioxide

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Photovoltaic properties of iodine‐doped magnesium tetraphenylporphyrin sandwich cells. Optimization of doping, and dark electrical properties

W. A. Nevin; G. A. Chamberlain

J. Appl. Phys. 68, 5247–5255 (1990) https://doi.org/10.1063/1.347041

Abstract

View articletitled, Photovoltaic properties of iodine‐doped magnesium tetraphenylporphyrin sandwich cells. Optimization of doping, and dark electrical properties

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Selective interdiffusion of GaInAs/AlInAs quantum wells by SiO₂ encapsulation and rapid thermal annealing

S. O’Brien; J. R. Shealy; V. K. F. Chia; J. Y. Chi

J. Appl. Phys. 68, 5256–5261 (1990) https://doi.org/10.1063/1.347194

Abstract

View articletitled, Selective interdiffusion of GaInAs/AlInAs quantum wells by SiO2 encapsulation and rapid thermal annealing

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An investigation of Si‐SiO₂ interface charges in thermally oxidized (100), (110), (111), and (511) silicon

Susan C. Vitkavage; Eugene A. Irene; Hisham Z. Massoud

J. Appl. Phys. 68, 5262–5272 (1990) https://doi.org/10.1063/1.347042

Abstract

View articletitled, An investigation of Si‐SiO2 interface charges in thermally oxidized (100), (110), (111), and (511) silicon

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Modeling of pulsed laser etching of high‐T_c superconductors

A. N. Jette; W. J. Green

J. Appl. Phys. 68, 5273–5277 (1990) https://doi.org/10.1063/1.347043

Abstract

View articletitled, Modeling of pulsed laser etching of high‐Tc superconductors

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Superconducting HoBa₂Cu₃O_x films on Si without a buffer layer

Akira Tsukamoto; Kazushige Imagawa; Masahiko Hiratani; Toshiyuki Aida; Katsuki Miyauchi

J. Appl. Phys. 68, 5278–5282 (1990) https://doi.org/10.1063/1.347044

Abstract

View articletitled, Superconducting HoBa2Cu3Ox films on Si without a buffer layer

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Transmission electron microscopy study of the environmental degradation in Ba₂YCu₃O_7−y

O. Wada; T. Odaka; M. Wakata; T. Ogama; A. Yosidome

J. Appl. Phys. 68, 5283–5288 (1990) https://doi.org/10.1063/1.347045

Abstract

View articletitled, Transmission electron microscopy study of the environmental degradation in Ba2YCu3O7−y

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Study on Zn‐, Cd‐, or Hg‐addition into TlBaCuO

Y. Xin; Z. Z. Sheng

J. Appl. Phys. 68, 5289–5292 (1990) https://doi.org/10.1063/1.347020

Abstract

View articletitled, Study on Zn‐, Cd‐, or Hg‐addition into TlBaCuO

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Domain erasure and formation in direct overwrite magneto‐optic recording

Mark D. Schultz; Mark H. Kryder

J. Appl. Phys. 68, 5293–5299 (1990) https://doi.org/10.1063/1.347021

Abstract

View articletitled, Domain erasure and formation in direct overwrite magneto‐optic recording

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Analysis of surface oxides of gas‐evaporated Si small particles with infrared spectroscopy, high‐resolution electron microscopy, and x‐ray photoemission spectroscopy

Shinji Hayashi; Shinichi Tanimoto; Keiichi Yamamoto

J. Appl. Phys. 68, 5300–5308 (1990) https://doi.org/10.1063/1.347022

Abstract

View articletitled, Analysis of surface oxides of gas‐evaporated Si small particles with infrared spectroscopy, high‐resolution electron microscopy, and x‐ray photoemission spectroscopy

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Photoreflectance characterization of surface Fermi level in as‐grown GaAs(100)

T. Kanata; M. Matsunaga; H. Takakura; Y. Hamakawa; T. Nishino

J. Appl. Phys. 68, 5309–5313 (1990) https://doi.org/10.1063/1.347023

Abstract

View articletitled, Photoreflectance characterization of surface Fermi level in as‐grown GaAs(100)

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Optical properties of InGaAs lattice‐matched to InP

T. W. Nee; A. K. Green

J. Appl. Phys. 68, 5314–5317 (1990) https://doi.org/10.1063/1.347024

Abstract

View articletitled, Optical properties of InGaAs lattice‐matched to InP

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Photoluminescent properties and optical absorption of AlAs/GaAs disordered superlattices

Teiji Yamamoto; Makoto Kasu; Susumu Noda; Akio Sasaki

J. Appl. Phys. 68, 5318–5323 (1990) https://doi.org/10.1063/1.347025

Abstract

View articletitled, Photoluminescent properties and optical absorption of AlAs/GaAs disordered superlattices

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Dry etching of niobium using CCl₂F₂ and CF₄: A comparison

Jay N. Sasserath

J. Appl. Phys. 68, 5324–5328 (1990) https://doi.org/10.1063/1.347026

Abstract

View articletitled, Dry etching of niobium using CCl2F2 and CF4: A comparison

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Chemical sputtering of Al₂O₃ by fluorine‐containing plasmas excited by electron cyclotron resonance

Y. H. Lee; Z. H. Zhou; D. A. Danner; P. M. Fryer; J. M. Harper

J. Appl. Phys. 68, 5329–5336 (1990) https://doi.org/10.1063/1.347027

Abstract

View articletitled, Chemical sputtering of Al2O3 by fluorine‐containing plasmas excited by electron cyclotron resonance

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Numerical simulations of amorphous silicon thin‐film transistors

M. Hack; J. Shaw

J. Appl. Phys. 68, 5337–5342 (1990) https://doi.org/10.1063/1.347028

Abstract

View articletitled, Numerical simulations of amorphous silicon thin‐film transistors

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Interaction of hole trapping and transit effects in the temporal response of InP/InGaAs p‐type insulator n‐type photodiodes

B. C. Johnson; J. C. Campbell; A. G. Dentai; C. H. Joyner; G. J. Qua

J. Appl. Phys. 68, 5343–5347 (1990) https://doi.org/10.1063/1.347029

Abstract

View articletitled, Interaction of hole trapping and transit effects in the temporal response of InP/InGaAs p‐type insulator n‐type photodiodes

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Absorptive electro‐optic spatial light modulators with different quantum well profiles

G. D. Sanders; K. K. Bajaj

J. Appl. Phys. 68, 5348–5356 (1990) https://doi.org/10.1063/1.347030

Abstract

View articletitled, Absorptive electro‐optic spatial light modulators with different quantum well profiles

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Calibration of Sm:YAG as an alternate high‐pressure scale

Q. Bi; J. M. Brown; Y. Sato‐Sorensen

J. Appl. Phys. 68, 5357–5359 (1990) https://doi.org/10.1063/1.347031

Abstract

View articletitled, Calibration of Sm:YAG as an alternate high‐pressure scale

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Field‐induced anisotropic distribution functions and semiconductor transport equations with tensor‐form coefficients

Datong Chen; Edwin C. Kan; Karl Hess

J. Appl. Phys. 68, 5360–5362 (1990) https://doi.org/10.1063/1.347032

Abstract

View articletitled, Field‐induced anisotropic distribution functions and semiconductor transport equations with tensor‐form coefficients

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Resonance Raman scattering from epitaxial InSb films grown by metalorganic magnetron sputtering

Z. C. Feng; S. Perkowitz; T. S. Rao; J. B. Webb

J. Appl. Phys. 68, 5363–5365 (1990) https://doi.org/10.1063/1.347033

Abstract

View articletitled, Resonance Raman scattering from epitaxial InSb films grown by metalorganic magnetron sputtering

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Generalization of Bragg reflector geometry: Application to (Ga,Al)As‐(Ca,Sr)F₂ reflectors

C. Fontaine; P. Requena; A. Muñoz‐Yagüe

J. Appl. Phys. 68, 5366–5368 (1990) https://doi.org/10.1063/1.347034

Abstract

View articletitled, Generalization of Bragg reflector geometry: Application to (Ga,Al)As‐(Ca,Sr)F2 reflectors

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Laser‐induced chemical vapor deposition of AlN films

Xin Li; T. L. Tansley

J. Appl. Phys. 68, 5369–5371 (1990) https://doi.org/10.1063/1.347035

Abstract

View articletitled, Laser‐induced chemical vapor deposition of AlN films

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Arc cathode spot heat transfer and existence diagram

H. Minoo

J. Appl. Phys. 68, 5372–5374 (1990) https://doi.org/10.1063/1.347036

Abstract

View articletitled, Arc cathode spot heat transfer and existence diagram

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Lateral confinement in generalized strip‐loaded optical waveguides

Michael Munowitz; David J. Vezzetti

J. Appl. Phys. 68, 5375–5377 (1990) https://doi.org/10.1063/1.347037

Abstract

View articletitled, Lateral confinement in generalized strip‐loaded optical waveguides

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Visible laser action in N₂‐laser‐pumped Ti vapor

H. Ninomiya; K. Hirata

J. Appl. Phys. 68, 5378–5380 (1990) https://doi.org/10.1063/1.347038

Abstract

View articletitled, Visible laser action in N2‐laser‐pumped Ti vapor

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A novel test structure for grating pitch determination with near‐Angstrom accuracy

M. C. Peckerar; K. W. Rhee; P.‐T. Ho; J. Goldhar

J. Appl. Phys. 68, 5381–5382 (1990) https://doi.org/10.1063/1.347039

Abstract

View articletitled, A novel test structure for grating pitch determination with near‐Angstrom accuracy

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Reactive ion etching of zinc doped InP using methane and hydrogen: Assessment of the degree and extent of changes in surface carrier concentration

Jaspal Singh

J. Appl. Phys. 68, 5383–5384 (1990) https://doi.org/10.1063/1.347017

Abstract

View articletitled, Reactive ion etching of zinc doped InP using methane and hydrogen: Assessment of the degree and extent of changes in surface carrier concentration

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Background impurity dependence of redistributions of implanted gallium in silicon during annealing

Katsuhiro Yokota; Hiroshi Furuta; Shinji Ishihara; Itsuro Kimura

J. Appl. Phys. 68, 5385–5387 (1990) https://doi.org/10.1063/1.347018

Abstract

View articletitled, Background impurity dependence of redistributions of implanted gallium in silicon during annealing

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Phototransmission study of strained‐layer In_xGa_1−x As/GaAs single quantum well structures

Shu Yuan; Shumin Wang; Shixiong Qian; Yufen Li; T. G. Andersson; Z‐G. Chen

J. Appl. Phys. 68, 5388–5390 (1990) https://doi.org/10.1063/1.347019

Abstract

View articletitled, Phototransmission study of strained‐layer InxGa1−x As/GaAs single quantum well structures

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Erratum: ‘‘P‐polarized optical properties of aggregated Au films’’ [J. Appl. Phys. 68, 1820 (1990)]

Georges Bader; P. V. Ashrit; Fernand E. Girouard; Vo‐Van Truong

J. Appl. Phys. 68, 5391 (1990) https://doi.org/10.1063/1.347199

View articletitled, Erratum: ‘‘P‐polarized optical properties of aggregated Au films’’ [J. Appl. Phys. 68, 1820 (1990)]

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