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A layered‐shell model of isotropic composites and exact expressions for the effective properties

Mordehai Milgrom; S. Shtrikman

J. Appl. Phys. 66, 3429–3436 (1989) https://doi.org/10.1063/1.344097

Abstract

View articletitled, A layered‐shell model of isotropic composites and exact expressions for the effective properties

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Surface‐wave reflection and refraction at an impedance discontinuity

John Lam

J. Appl. Phys. 66, 3437–3444 (1989) https://doi.org/10.1063/1.344098

Abstract

View articletitled, Surface‐wave reflection and refraction at an impedance discontinuity

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Temperature‐dependent characteristics of GaAs/AlGaAs multiple‐quantum‐well optical modulators

R. B. Bailey; R. Sahai; C. Lastufka; K. Vural

J. Appl. Phys. 66, 3445–3452 (1989) https://doi.org/10.1063/1.344099

Abstract

View articletitled, Temperature‐dependent characteristics of GaAs/AlGaAs multiple‐quantum‐well optical modulators

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Theoretical investigation of multiline emission from a hybrid CO₂ laser

Sucharita Sinha; S. C. Mehendale

J. Appl. Phys. 66, 3453–3455 (1989) https://doi.org/10.1063/1.344100

Abstract

View articletitled, Theoretical investigation of multiline emission from a hybrid CO2 laser

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Improved laser‐beam uniformity using the angular dispersion of frequency‐modulated light

S. Skupsky; R. W. Short; T. Kessler; R. S. Craxton; S. Letzring; J. M. Soures

J. Appl. Phys. 66, 3456–3462 (1989) https://doi.org/10.1063/1.344101

Abstract

View articletitled, Improved laser‐beam uniformity using the angular dispersion of frequency‐modulated light

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Influence of transverse dc self‐fields of the electron beam on the dispersion relation in a free‐electron laser with an axial magnetic field

Shi‐chang Zhang; Zhong Zhang

J. Appl. Phys. 66, 3463–3466 (1989) https://doi.org/10.1063/1.344480

Abstract

View articletitled, Influence of transverse dc self‐fields of the electron beam on the dispersion relation in a free‐electron laser with an axial magnetic field

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The influence of the insulator surface in the plasma focus behavior

J. N. Feugeas

J. Appl. Phys. 66, 3467–3471 (1989) https://doi.org/10.1063/1.344102

Abstract

View articletitled, The influence of the insulator surface in the plasma focus behavior

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WKB solution for wave propagation in a decaying plasma medium

Dikshitulu K. Kalluri; Venkata R. Goteti

J. Appl. Phys. 66, 3472–3475 (1989) https://doi.org/10.1063/1.344103

Abstract

View articletitled, WKB solution for wave propagation in a decaying plasma medium

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Electron acceleration in a relativistic electron plasma wave

P. Mora; F. Amiranoff

J. Appl. Phys. 66, 3476–3481 (1989) https://doi.org/10.1063/1.344104

Abstract

View articletitled, Electron acceleration in a relativistic electron plasma wave

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A cyclotron resonance mechanism for very‐low‐frequency whistler‐mode sideband wave radiation. I. Introduction and description of external resonances

L. A. D. Sá

J. Appl. Phys. 66, 3482–3494 (1989) https://doi.org/10.1063/1.344105

Abstract

View articletitled, A cyclotron resonance mechanism for very‐low‐frequency whistler‐mode sideband wave radiation. I. Introduction and description of external resonances

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A cyclotron resonance mechanism for very‐low‐frequency whistler‐mode sideband wave radiation. II. Description of internal (‘‘trapped’’) resonances

L. A. D. Sá

J. Appl. Phys. 66, 3495–3505 (1989) https://doi.org/10.1063/1.344106

Abstract

View articletitled, A cyclotron resonance mechanism for very‐low‐frequency whistler‐mode sideband wave radiation. II. Description of internal (‘‘trapped’’) resonances

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A cyclotron resonance mechanism for very‐low‐frequency whistler‐mode sideband wave radiation. III. Effect of the inhomogeneity on sideband resonances

L. A. D. Sá

J. Appl. Phys. 66, 3506–3514 (1989) https://doi.org/10.1063/1.344107

Abstract

View articletitled, A cyclotron resonance mechanism for very‐low‐frequency whistler‐mode sideband wave radiation. III. Effect of the inhomogeneity on sideband resonances

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Raman scattering study of lattice disorder in 1‐MeV Si‐implanted GaAs

G. Braunstein; D. Tuschel; Samuel Chen; S.‐Tong Lee

J. Appl. Phys. 66, 3515–3522 (1989) https://doi.org/10.1063/1.344108

Abstract

View articletitled, Raman scattering study of lattice disorder in 1‐MeV Si‐implanted GaAs

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Time resolved x‐ray diffraction study of laser annealing in silicon at grazing incidence

J. R. Buschert; J. Z. Tischler; D. M. Mills; Q. Zhao; R. Colella

J. Appl. Phys. 66, 3523–3525 (1989) https://doi.org/10.1063/1.344109

Abstract

View articletitled, Time resolved x‐ray diffraction study of laser annealing in silicon at grazing incidence

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Heat‐treatment‐induced defects in low‐resistivity silicon

S. Dannefaer; W. Puff; P. Mascher; D. Kerr

J. Appl. Phys. 66, 3526–3534 (1989) https://doi.org/10.1063/1.344110

Abstract

View articletitled, Heat‐treatment‐induced defects in low‐resistivity silicon

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Inclined pileup of edge dislocations near the crack tip

Guido D. C. Dhondt; A. Cemal Eringen

J. Appl. Phys. 66, 3535–3541 (1989) https://doi.org/10.1063/1.344111

Abstract

View articletitled, Inclined pileup of edge dislocations near the crack tip

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Phase identification of chemically etched InP by x‐ray diffraction techniques

H. F. Hsieh; H. C. Shih

J. Appl. Phys. 66, 3542–3547 (1989) https://doi.org/10.1063/1.344479

Abstract

View articletitled, Phase identification of chemically etched InP by x‐ray diffraction techniques

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Chemical modifications at Teflon interfaces induced by MeV ion beams

P. Anders Ingemarsson; Michael P. Keane; Ulrik Gelius

J. Appl. Phys. 66, 3548–3553 (1989) https://doi.org/10.1063/1.344083

Abstract

View articletitled, Chemical modifications at Teflon interfaces induced by MeV ion beams

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Aggregate structure in CuBSe₂/Mo films (B=In,Ga): Its relation to their electrical activity

Lev Margulis; Gary Hodes; Abram Jakubowicz; David Cahen

J. Appl. Phys. 66, 3554–3559 (1989) https://doi.org/10.1063/1.344084

Abstract

View articletitled, Aggregate structure in CuBSe2/Mo films (B=In,Ga): Its relation to their electrical activity

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Impact damage model for ceramic materials

A. M. Rajendran; J. L. Kroupa

J. Appl. Phys. 66, 3560–3565 (1989) https://doi.org/10.1063/1.344085

Abstract

View articletitled, Impact damage model for ceramic materials

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Interfacial roughness in InAs/GaAs heterostructures determined by soft x‐ray reflectivity

S. C. Woronick; B. X. Yang; A. Król; Y. H. Kao; H. Munekata; L. L. Chang

J. Appl. Phys. 66, 3566–3573 (1989) https://doi.org/10.1063/1.344086

Abstract

View articletitled, Interfacial roughness in InAs/GaAs heterostructures determined by soft x‐ray reflectivity

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Adhesion‐induced deformations of polymeric substrates: Particle size dependence of the contact area

D. S. Rimai; L. P. DeMejo; R. C. Bowen

J. Appl. Phys. 66, 3574–3578 (1989) https://doi.org/10.1063/1.344087

Abstract

View articletitled, Adhesion‐induced deformations of polymeric substrates: Particle size dependence of the contact area

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Silicon atom migration along grain boundaries in electron‐beam‐annealed silicon‐on‐insulator islands

Y. Hayafuji; T. Yanada; A. Shibata; S. Kawado

J. Appl. Phys. 66, 3579–3584 (1989) https://doi.org/10.1063/1.344062

Abstract

View articletitled, Silicon atom migration along grain boundaries in electron‐beam‐annealed silicon‐on‐insulator islands

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A pile‐up phenomenon during arsenic diffusion in silicon‐on‐insulator structures formed by oxygen implantation

P. Normand; D. Tsoukalas; N. Guillemot; P. Chenevier

J. Appl. Phys. 66, 3585–3589 (1989) https://doi.org/10.1063/1.344063

Abstract

View articletitled, A pile‐up phenomenon during arsenic diffusion in silicon‐on‐insulator structures formed by oxygen implantation

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Rapid thermal diffusion of Zn into n‐type GaAs_0.6P_0.4 from Zn‐doped oxide films

Akira Usami; Yutaka Tokuda; Hiroyuki Shiraki; Hiroyuki Ueda; Takao Wada; Hirobumi Kan; Tadayoshi Murakami

J. Appl. Phys. 66, 3590–3594 (1989) https://doi.org/10.1063/1.344064

Abstract

View articletitled, Rapid thermal diffusion of Zn into n‐type GaAs0.6P0.4 from Zn‐doped oxide films

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Characterization of filament‐assisted chemical vapor deposition diamond films using Raman spectroscopy

R. G. Buckley; T. D. Moustakas; Ling Ye; J. Varon

J. Appl. Phys. 66, 3595–3599 (1989) https://doi.org/10.1063/1.344065

Abstract

View articletitled, Characterization of filament‐assisted chemical vapor deposition diamond films using Raman spectroscopy

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Thermally and ion‐induced phase formation in a Pd/Ge bilayer

Jian Li; Q. Z. Hong; J. W. Mayer

J. Appl. Phys. 66, 3600–3603 (1989) https://doi.org/10.1063/1.344066

Abstract

View articletitled, Thermally and ion‐induced phase formation in a Pd/Ge bilayer

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Interfacial reactions of titanium thin films on BF⁺₂ ‐implanted (001)Si

W. Lur; L. J. Chen

J. Appl. Phys. 66, 3604–3611 (1989) https://doi.org/10.1063/1.344067

Abstract

View articletitled, Interfacial reactions of titanium thin films on BF+2 ‐implanted (001)Si

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Silicon nitride produced by catalytic chemical vapor deposition method

Hideki Matsumura

J. Appl. Phys. 66, 3612–3617 (1989) https://doi.org/10.1063/1.344068

Abstract

View articletitled, Silicon nitride produced by catalytic chemical vapor deposition method

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Molecular‐beam epitaxial growth of high‐quality InSb on InP and GaAs substrates

J. E. Oh; P. K. Bhattacharya; Y. C. Chen; S. Tsukamoto

J. Appl. Phys. 66, 3618–3621 (1989) https://doi.org/10.1063/1.344069

Abstract

View articletitled, Molecular‐beam epitaxial growth of high‐quality InSb on InP and GaAs substrates

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Structural characterization of molecular‐beam epitaxially grown Zn_1−x Mn_xSe on GaAs(001) substrates

S. B. Qadri; N. Samarth; J. K. Furdyna

J. Appl. Phys. 66, 3622–3625 (1989) https://doi.org/10.1063/1.344070

Abstract

View articletitled, Structural characterization of molecular‐beam epitaxially grown Zn1−x MnxSe on GaAs(001) substrates

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Measurement of adhesion of thin polymer coatings by indentation

J. E. Ritter; T. J. Lardner; L. Rosenfeld; M. R. Lin

J. Appl. Phys. 66, 3626–3634 (1989) https://doi.org/10.1063/1.344071

Abstract

View articletitled, Measurement of adhesion of thin polymer coatings by indentation

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Structural perfection of InGaAs/InP strained‐layer superlattices grown by gas source molecular‐beam epitaxy: A high‐resolution x‐ray diffraction study

J. M. Vandenberg; D. Gershoni; R. A. Hamm; M. B. Panish; H. Temkin

J. Appl. Phys. 66, 3635–3638 (1989) https://doi.org/10.1063/1.344072

Abstract

View articletitled, Structural perfection of InGaAs/InP strained‐layer superlattices grown by gas source molecular‐beam epitaxy: A high‐resolution x‐ray diffraction study

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Effects of Hartree, exchange, and correlation energy on intersubband transitions

Walter L. Bloss

J. Appl. Phys. 66, 3639–3642 (1989) https://doi.org/10.1063/1.344073

Abstract

View articletitled, Effects of Hartree, exchange, and correlation energy on intersubband transitions

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Activation uniformity improvement of undoped semi‐insulating GaAs with an improved post‐implant anneal furnace

C. Lanzieri; S. Ciceroni; A. Cetronio

J. Appl. Phys. 66, 3643–3646 (1989) https://doi.org/10.1063/1.344074

Abstract

View articletitled, Activation uniformity improvement of undoped semi‐insulating GaAs with an improved post‐implant anneal furnace

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Zn‐induced impurity levels in layer semiconductor InSe

S. Shigetomi; H. Ohkubo; T. Ikari; H. Nakashima

J. Appl. Phys. 66, 3647–3650 (1989) https://doi.org/10.1063/1.344075

Abstract

View articletitled, Zn‐induced impurity levels in layer semiconductor InSe

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Thermal donor annihilation and defect production in n‐type silicon by rapid thermal annealing

Yutaka Tokuda; Nobuji Kobayashi; Akira Usami; Yajiro Inoue; Makoto Imura

J. Appl. Phys. 66, 3651–3655 (1989) https://doi.org/10.1063/1.344076

Abstract

View articletitled, Thermal donor annihilation and defect production in n‐type silicon by rapid thermal annealing

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Deep levels in Ga‐doped ZnSe grown by molecular‐beam epitaxy

S. Venkatesan; R. F. Pierret; J. Qiu; M. Kobayashi; R. L. Gunshor; L. A. Kolodziejski

J. Appl. Phys. 66, 3656–3660 (1989) https://doi.org/10.1063/1.344077

Abstract

View articletitled, Deep levels in Ga‐doped ZnSe grown by molecular‐beam epitaxy

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Toward an analytical solution of the hydrogenated amorphous silicon p‐i‐n structure: Hyperbolic approximation of nonuniform electric field

Fernanda Irrera; Fabrizio Palma

J. Appl. Phys. 66, 3661–3665 (1989) https://doi.org/10.1063/1.344078

Abstract

View articletitled, Toward an analytical solution of the hydrogenated amorphous silicon p‐i‐n structure: Hyperbolic approximation of nonuniform electric field

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Characterization of individual interfacial barriers in a ZnO varistor material

E. Olsson; G. L. Dunlop

J. Appl. Phys. 66, 3666–3675 (1989) https://doi.org/10.1063/1.344453

Abstract

View articletitled, Characterization of individual interfacial barriers in a ZnO varistor material

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Electronic bonding of buried interfaces determined by soft x‐ray emission spectroscopy

R. C. C. Perera; C. H. Zhang; T. A. Callcott; D. L. Ederer

J. Appl. Phys. 66, 3676–3681 (1989) https://doi.org/10.1063/1.344079

Abstract

View articletitled, Electronic bonding of buried interfaces determined by soft x‐ray emission spectroscopy

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Synthesis of sheet conductive layers on the surface of some insulator ceramics (TiO₂, ZrO₂, HfO₂) by multipulse CO₂‐laser irradiation in an ammonia atmosphere

I. Ursu; I. N. Mihailescu; Leona C. Nistor; V. S. Teodorescu; A. M. Prokhorov; V. I. Konov; P. I. Nikitin; S. A. Uglov

J. Appl. Phys. 66, 3682–3687 (1989) https://doi.org/10.1063/1.344080

Abstract

View articletitled, Synthesis of sheet conductive layers on the surface of some insulator ceramics (TiO2, ZrO2, HfO2) by multipulse CO2‐laser irradiation in an ammonia atmosphere

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Transport through InGaAs‐InP superlattices grown by chemical beam epitaxy

T. H. H. Vuong; D. C. Tsui; W. T. Tsang

J. Appl. Phys. 66, 3688–3697 (1989) https://doi.org/10.1063/1.344081

Abstract

View articletitled, Transport through InGaAs‐InP superlattices grown by chemical beam epitaxy

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Interpretation of some experimental observations on a YBa₂Cu₃O₇₋_x weak link in terms of series grain boundary junctions

M. H. Fan; P. H. Wu

J. Appl. Phys. 66, 3698–3702 (1989) https://doi.org/10.1063/1.344082

Abstract

View articletitled, Interpretation of some experimental observations on a YBa2Cu3O7−x weak link in terms of series grain boundary junctions

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Influence of oxygen on the structural stability and superconducting properties of ceramic (Bi,Pb)₂Sr₂Ca₂Cu₃O_δ

S. M. Green; Yu Mei; A. E. Manzi; H. L. Luo

J. Appl. Phys. 66, 3703–3709 (1989) https://doi.org/10.1063/1.344054

Abstract

View articletitled, Influence of oxygen on the structural stability and superconducting properties of ceramic (Bi,Pb)2Sr2Ca2Cu3Oδ

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Temperature and composition dependence of grain boundary segregation in La_2−xSr_xCuO_4−y

A. Roshko; Y.‐M. Chiang

J. Appl. Phys. 66, 3710–3716 (1989) https://doi.org/10.1063/1.344055

Abstract

View articletitled, Temperature and composition dependence of grain boundary segregation in La2−xSrxCuO4−y

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Preparation and characterization of superconducting phases in the Bi(Pb)‐Sr‐Ca‐Cu‐O system

Asok K. Sarkar; I. Maartense; T. L. Peterson; Binod Kumar

J. Appl. Phys. 66, 3717–3722 (1989) https://doi.org/10.1063/1.344056

Abstract

View articletitled, Preparation and characterization of superconducting phases in the Bi(Pb)‐Sr‐Ca‐Cu‐O system

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Collective oscillations of the crystal‐field‐generated oxygen dipoles as a pairing mechanism in high‐T_c superconductor YBa₂Cu₃O_7−δ to explain T_c vs δ

R. R. Sharma; Heebok Lee

J. Appl. Phys. 66, 3723–3726 (1989) https://doi.org/10.1063/1.344478

Abstract

View articletitled, Collective oscillations of the crystal‐field‐generated oxygen dipoles as a pairing mechanism in high‐Tc superconductor YBa2Cu3O7−δ to explain Tc vs δ

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On the self‐magnetostatic energy of jagged domain walls

M. Mansuripur

J. Appl. Phys. 66, 3727–3730 (1989) https://doi.org/10.1063/1.344057

Abstract

View articletitled, On the self‐magnetostatic energy of jagged domain walls

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Demagnetizing field computation for thin films: Extension to the hexagonal lattice

M. Mansuripur

J. Appl. Phys. 66, 3731–3733 (1989) https://doi.org/10.1063/1.344058

Abstract

View articletitled, Demagnetizing field computation for thin films: Extension to the hexagonal lattice

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rf‐diode sputtered Permalloy film

M. M. Yang; J. A. Aboaf

J. Appl. Phys. 66, 3734–3740 (1989) https://doi.org/10.1063/1.344059

Abstract

View articletitled, rf‐diode sputtered Permalloy film

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Effective dielectric constant and magnetic permeability of a simple cubic lattice populated by two species of conducting magnetic spheres

John Lam

J. Appl. Phys. 66, 3741–3749 (1989) https://doi.org/10.1063/1.344060

Abstract

View articletitled, Effective dielectric constant and magnetic permeability of a simple cubic lattice populated by two species of conducting magnetic spheres

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The interband absorption spectra of sputter‐deposited boron nitride analyzed using the coherent potential approximation

Carolyn Rubin Aita

J. Appl. Phys. 66, 3750–3752 (1989) https://doi.org/10.1063/1.344061

Abstract

View articletitled, The interband absorption spectra of sputter‐deposited boron nitride analyzed using the coherent potential approximation

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Photoluminescence studies of Si‐implanted InP

R. Chang; D. L. Lile; S. Singh; T. Hwang

J. Appl. Phys. 66, 3753–3757 (1989) https://doi.org/10.1063/1.344036

Abstract

View articletitled, Photoluminescence studies of Si‐implanted InP

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X‐ray excited luminescence spectroscopy of barium fluorohalides

M. K. Crawford; L. H. Brixner; K. Somaiah

J. Appl. Phys. 66, 3758–3762 (1989) https://doi.org/10.1063/1.344037

Abstract

View articletitled, X‐ray excited luminescence spectroscopy of barium fluorohalides

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Model for infrared absorption and transmission of liquid‐phase epitaxy HgCdTe

C. A. Hougen

J. Appl. Phys. 66, 3763–3766 (1989) https://doi.org/10.1063/1.344038

Abstract

View articletitled, Model for infrared absorption and transmission of liquid‐phase epitaxy HgCdTe

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Raman study of crystalline structure and resonant behavior in (Al_xGa_1−x)_0.5In_0.5P quaternary alloys

Minoru Kubo; Masaya Mannoh; Tadashi Narusawa

J. Appl. Phys. 66, 3767–3771 (1989) https://doi.org/10.1063/1.344039

Abstract

View articletitled, Raman study of crystalline structure and resonant behavior in (AlxGa1−x)0.5In0.5P quaternary alloys

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Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor‐phase epitaxial gallium arsenide

B. Lee; K. Arai; B. J. Skromme; S. S. Bose; T. J. Roth; J. A. Aguilar; T. R. Lepkowski; N. C. Tien; G. E. Stillman

J. Appl. Phys. 66, 3772–3786 (1989) https://doi.org/10.1063/1.344040

Abstract

View articletitled, Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor‐phase epitaxial gallium arsenide

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On the correlation between high‐order bands and some photoluminescence lines in neutron‐irradiated FZ silicon

Lei Zhong; Zhanguo Wang; Shouke Wan; Lanying Lin

J. Appl. Phys. 66, 3787–3791 (1989) https://doi.org/10.1063/1.344041

Abstract

View articletitled, On the correlation between high‐order bands and some photoluminescence lines in neutron‐irradiated FZ silicon

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Effects of energy transfer on quantum efficiency of YAG:Nd

V. Lupei; A. Lupei; S. Georgescu; W. M. Yen

J. Appl. Phys. 66, 3792–3797 (1989) https://doi.org/10.1063/1.344042

Abstract

View articletitled, Effects of energy transfer on quantum efficiency of YAG:Nd

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Theory of two‐wave mixing gain enhancement in photorefractive InP:Fe: A new mechanism of resonance

G. Picoli; P. Gravey; C. Ozkul; V. Vieux

J. Appl. Phys. 66, 3798–3813 (1989) https://doi.org/10.1063/1.344043

Abstract

View articletitled, Theory of two‐wave mixing gain enhancement in photorefractive InP:Fe: A new mechanism of resonance

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Application of porous silicon formation selectivity to impurity profiling in p‐type silicon substrates

M. Ligeon; F. Muller; R. Herino; F. Gaspard; A. Halimaoui; G. Bomchil

J. Appl. Phys. 66, 3814–3819 (1989) https://doi.org/10.1063/1.344044

Abstract

View articletitled, Application of porous silicon formation selectivity to impurity profiling in p‐type silicon substrates

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Thermochemistry of alkylarsine compounds used as arsenic precursors in metalorganic vapor phase epitaxy

R. M. Lum; J. K. Klingert

J. Appl. Phys. 66, 3820–3823 (1989) https://doi.org/10.1063/1.344045

Abstract

View articletitled, Thermochemistry of alkylarsine compounds used as arsenic precursors in metalorganic vapor phase epitaxy

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Stabilization and removal of the native oxides at the surface of (100)InP by low‐pressure exposure to NH₃

J. M. Moison; Y. I. Nissim; C. Licoppe

J. Appl. Phys. 66, 3824–3830 (1989) https://doi.org/10.1063/1.344046

Abstract

View articletitled, Stabilization and removal of the native oxides at the surface of (100)InP by low‐pressure exposure to NH3

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Cathodoluminescence mapping, deep‐level transient spectroscopy, and electron‐beam‐induced current measurements on GaAs layers grown on Si substrates by metalorganic chemical vapor deposition

A. C. Papadopoulo; J. F. Bresse; R. Legros; R. Azoulay; N. Draidia; Y. Gao

J. Appl. Phys. 66, 3831–3838 (1989) https://doi.org/10.1063/1.344047

Abstract

View articletitled, Cathodoluminescence mapping, deep‐level transient spectroscopy, and electron‐beam‐induced current measurements on GaAs layers grown on Si substrates by metalorganic chemical vapor deposition

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Temperature dependence of reactive ion etching of GaAs with CCl₂F₂:O₂

S. J. Pearton; A. B. Emerson; U. K. Chakrabarti; E. Lane; K. S. Jones; K. T. Short; Alice E. White; T. R. Fullowan

J. Appl. Phys. 66, 3839–3849 (1989) https://doi.org/10.1063/1.344048

Abstract

View articletitled, Temperature dependence of reactive ion etching of GaAs with CCl2F2:O2

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Impedance and modulus spectroscopy of semiconducting BaTiO₃ showing positive temperature coefficient of resistance

D. C. Sinclair; A. R. West

J. Appl. Phys. 66, 3850–3856 (1989) https://doi.org/10.1063/1.344049

Abstract

View articletitled, Impedance and modulus spectroscopy of semiconducting BaTiO3 showing positive temperature coefficient of resistance

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On the origin of rapid thermal process induced recombination centers in silicon

W. Eichhammer; Vu‐Thuong‐Quat; P. Siffert

J. Appl. Phys. 66, 3857–3865 (1989) https://doi.org/10.1063/1.344050

Abstract

View articletitled, On the origin of rapid thermal process induced recombination centers in silicon

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GaSb booster cells for over 30% efficient solar‐cell stacks

L. M. Fraas; G. R. Girard; J. E. Avery; B. A. Arau; V. S. Sundaram; A. G. Thompson; J. M. Gee

J. Appl. Phys. 66, 3866–3870 (1989) https://doi.org/10.1063/1.344051

Abstract

View articletitled, GaSb booster cells for over 30% efficient solar‐cell stacks

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Intense microwave radiation from a repetitive backward‐wave oscillator driven by a relativistic electron beam

A. Bromborsky; G. W. Still; R. A. Kehs; C. Clark; L. Early; G. Rohwein; J. Poukey

J. Appl. Phys. 66, 3871–3876 (1989) https://doi.org/10.1063/1.344052

Abstract

View articletitled, Intense microwave radiation from a repetitive backward‐wave oscillator driven by a relativistic electron beam

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Fast responding and highly multiplexible distorted helix ferroelectric liquid‐crystal displays

J. Fünfschilling; M. Schadt

J. Appl. Phys. 66, 3877–3882 (1989) https://doi.org/10.1063/1.344452

Abstract

View articletitled, Fast responding and highly multiplexible distorted helix ferroelectric liquid‐crystal displays

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Experimental and theoretical characterization of trap‐related transfer loss in acoustic charge transport devices

D. Janes; M. J. Hoskins

J. Appl. Phys. 66, 3883–3891 (1989) https://doi.org/10.1063/1.344053

Abstract

View articletitled, Experimental and theoretical characterization of trap‐related transfer loss in acoustic charge transport devices

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Theory for a quantum modulated transistor

Fernando Sols; M. Macucci; U. Ravaioli; Karl Hess

J. Appl. Phys. 66, 3892–3906 (1989) https://doi.org/10.1063/1.344032

Abstract

View articletitled, Theory for a quantum modulated transistor

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As‐grown Y‐Ba‐Cu‐O thin films by reactive coevaporation with oxygen plasma cooling

M. Matsumoto; H. Akoh; S. Takada

J. Appl. Phys. 66, 3907–3909 (1989) https://doi.org/10.1063/1.344033

Abstract

View articletitled, As‐grown Y‐Ba‐Cu‐O thin films by reactive coevaporation with oxygen plasma cooling

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The effect of fluorine implantation on the interface radiation hardness of Si‐gate metal‐oxide‐semiconductor transistors

Yasushiro Nishioka; Kiyonori Ohyu; Yuzuru Ohji; Nobuyoshi Natsuaki; Kiichiro Mukai; T. P. Ma

J. Appl. Phys. 66, 3909–3912 (1989) https://doi.org/10.1063/1.344012

Abstract

View articletitled, The effect of fluorine implantation on the interface radiation hardness of Si‐gate metal‐oxide‐semiconductor transistors

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Magneto‐optical properties of transparent plastic material

Shinzo Muto; Shin‐ichiro Ichikawa; Takashi Nagata; Akihisa Matsuzaki; Hiroshi Ito

J. Appl. Phys. 66, 3912–3913 (1989) https://doi.org/10.1063/1.344013

Abstract

View articletitled, Magneto‐optical properties of transparent plastic material

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Temporal distortion of a short laser pulse in an absorbing amplifier

Michael M. Tilleman

J. Appl. Phys. 66, 3914–3916 (1989) https://doi.org/10.1063/1.344014

Abstract

View articletitled, Temporal distortion of a short laser pulse in an absorbing amplifier

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Observations of indentation cracks in brittle coating/substrate systems

Mei‐Chien Lu

J. Appl. Phys. 66, 3916–3918 (1989) https://doi.org/10.1063/1.344015

Abstract

View articletitled, Observations of indentation cracks in brittle coating/substrate systems

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Photoluminescence of ZnTe homoepitaxial layers grown by metalorganic vapor‐phase epitaxy at low pressure

Hiroshi Ogawa; Mitsuhiro Nishio

J. Appl. Phys. 66, 3919–3921 (1989) https://doi.org/10.1063/1.344016

Abstract

View articletitled, Photoluminescence of ZnTe homoepitaxial layers grown by metalorganic vapor‐phase epitaxy at low pressure

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Piezoelectric properties and elastic constants of 4H and 6H SiC at temperatures 4–320 K

S. Karmann; R. Helbig; R. A. Stein

J. Appl. Phys. 66, 3922–3924 (1989) https://doi.org/10.1063/1.344477

Abstract

View articletitled, Piezoelectric properties and elastic constants of 4H and 6H SiC at temperatures 4–320 K

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Anomaly of dielectric properties in tens‐nanometer‐thick lead lanthanum zirconate titanate films on a platinum substrate

T. Kanata; T. Nakagawa; M. Okuyama; Y. Hamakawa; S. Ibuki

J. Appl. Phys. 66, 3924–3926 (1989) https://doi.org/10.1063/1.344017

Abstract

View articletitled, Anomaly of dielectric properties in tens‐nanometer‐thick lead lanthanum zirconate titanate films on a platinum substrate

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Generation of several kinds of oxygen‐related thermal donors around 520 °C in Czochralski silicon

Yoichi Kamiura; Fumio Hashimoto; Minoru Yoneta

J. Appl. Phys. 66, 3926–3929 (1989) https://doi.org/10.1063/1.344018

Abstract

View articletitled, Generation of several kinds of oxygen‐related thermal donors around 520 °C in Czochralski silicon

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Observation of E₀ and E₁ transitions in AlGaP alloys by electrolyte electroreflectance

J. M. Rodríguez; G. Armelles; P. Salvador

J. Appl. Phys. 66, 3929–3931 (1989) https://doi.org/10.1063/1.344019

Abstract

View articletitled, Observation of E0 and E1 transitions in AlGaP alloys by electrolyte electroreflectance

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New contactless measurement of photoeffects in semiconductors

Jan Hlávka

J. Appl. Phys. 66, 3932–3934 (1989) https://doi.org/10.1063/1.344020

Abstract

View articletitled, New contactless measurement of photoeffects in semiconductors

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Electrically active defects in silicon after excimer laser processing

B. Hartiti; A. Slaoui; J. C. Muller; P. Siffert

J. Appl. Phys. 66, 3934–3937 (1989) https://doi.org/10.1063/1.344021

Abstract

View articletitled, Electrically active defects in silicon after excimer laser processing

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Preparation of very thin superconducting films of Y‐Ba‐Cu‐O by a layer‐by‐layer resistive evaporation

Jacob Azoulay; Dan Goldschmidt; R. Brener

J. Appl. Phys. 66, 3937–3940 (1989) https://doi.org/10.1063/1.344022

Abstract

View articletitled, Preparation of very thin superconducting films of Y‐Ba‐Cu‐O by a layer‐by‐layer resistive evaporation

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Ion implantation of sputtered Y‐Ba‐Cu‐O films

M. Rubin; I. G. Brown; E. Yin; D. Wruck

J. Appl. Phys. 66, 3940–3942 (1989) https://doi.org/10.1063/1.344023

Abstract

View articletitled, Ion implantation of sputtered Y‐Ba‐Cu‐O films

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Optical and electrochemical studies of passive film formation in amorphous Ni‐Cr‐P‐C alloys

D. B. Hagan; B. W. Sloope; V. A. Niculescu

J. Appl. Phys. 66, 3942–3945 (1989) https://doi.org/10.1063/1.344024

Abstract

View articletitled, Optical and electrochemical studies of passive film formation in amorphous Ni‐Cr‐P‐C alloys

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Preparation and characterization of the filled tetrahedral semiconductor LiZnP film on quartz

K. Kuriyama; T. Katoh; S. Tsuji

J. Appl. Phys. 66, 3945–3947 (1989) https://doi.org/10.1063/1.344025

Abstract

View articletitled, Preparation and characterization of the filled tetrahedral semiconductor LiZnP film on quartz

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On the propagation of transverse disturbances in free‐molecule flow

H. T. Yang

J. Appl. Phys. 66, 3947–3949 (1989) https://doi.org/10.1063/1.344026

Abstract

View articletitled, On the propagation of transverse disturbances in free‐molecule flow

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X‐ray photoelectron spectroscopy of Pb‐doped Bi‐Sr‐Ca‐Cu‐O superconductors

D. K. Rai; Asok K. Sarkar; T. N. Wittberg; Binod Kumar

J. Appl. Phys. 66, 3950–3952 (1989) https://doi.org/10.1063/1.344027

Abstract

View articletitled, X‐ray photoelectron spectroscopy of Pb‐doped Bi‐Sr‐Ca‐Cu‐O superconductors

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Oscillator strengths, quantum efficiencies, and laser cross sections of Yb³⁺ and Er³⁺ in III‐V compounds

F. Auzel; A. M. Jean‐Louis; Y. Toudic

J. Appl. Phys. 66, 3952–3955 (1989) https://doi.org/10.1063/1.344028

Abstract

View articletitled, Oscillator strengths, quantum efficiencies, and laser cross sections of Yb3+ and Er3+ in III‐V compounds

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Deep‐level admittance spectroscopy of DX centers in AlGaAs:Sn

S. Chakravarty; S. Subramanian; D. K. Sharma; B. M. Arora

J. Appl. Phys. 66, 3955–3958 (1989) https://doi.org/10.1063/1.344029

Abstract

View articletitled, Deep‐level admittance spectroscopy of DX centers in AlGaAs:Sn

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Enhancement of oxygen precipitation in quenched Czochralski silicon crystals

Akito Hara; Tetsuo Fukuda; Toru Miyabo; Iesada Hirai

J. Appl. Phys. 66, 3958–3960 (1989) https://doi.org/10.1063/1.344030

Abstract

View articletitled, Enhancement of oxygen precipitation in quenched Czochralski silicon crystals

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Optically pumped titanium vapor laser at 625.8 nm

H. Ninomiya; K. Hirata; S. Yoshino

J. Appl. Phys. 66, 3961–3962 (1989) https://doi.org/10.1063/1.344031

Abstract

View articletitled, Optically pumped titanium vapor laser at 625.8 nm

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Erratum: ‘‘X‐ray and Raman characterization of AlSb/GaSb strained layer superlattices and quasiperiodic Fibonacci lattices’’ [J. Appl. Phys. 64, 6733 (1988)]

A. T. Macrander; G. P. Schwartz; G. J. Gualtieri

J. Appl. Phys. 66, 3963 (1989) https://doi.org/10.1063/1.344504

View articletitled, Erratum: ‘‘X‐ray and Raman characterization of AlSb/GaSb strained layer superlattices and quasiperiodic Fibonacci lattices’’ [J. Appl. Phys. 64, 6733 (1988)]

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Erratum: ‘‘Multiple‐quantum‐well vertical light guide switch’’ [J. Appl. Phys. 65, 927 (1989)]

Marek Chmielowski; Dietrich W. Langer

J. Appl. Phys. 66, 3963 (1989) https://doi.org/10.1063/1.344509

View articletitled, Erratum: ‘‘Multiple‐quantum‐well vertical light guide switch’’ [J. Appl. Phys. 65, 927 (1989)]

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Erratum: ‘‘Long term stability in the operation of a chemical oxygen‐iodine laser for industrial use’’ [J. Appl. Phys. 66, 1033 (1989)]

Hiroo Fujii; Sanichiro Yoshida; Masachiro Iizuka; Toshio Atsuta

J. Appl. Phys. 66, 3964 (1989) https://doi.org/10.1063/1.344034

View articletitled, Erratum: ‘‘Long term stability in the operation of a chemical oxygen‐iodine laser for industrial use’’ [J. Appl. Phys. 66, 1033 (1989)]

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