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Volume 66, Issue 7
1 October 1989
Journal of Applied Physics Cover Image for Volume 66, Issue 7
All Issues
ISSN 0021-8979
EISSN 1089-7550
Hg+ ion density in low‐pressure Ar‐Hg discharge used for a mercury lamp
Tingsheng Lin; Toshio Goto; Toshihiko Arai; Seiichi Murayama
J. Appl. Phys. 66, 2779–2782 (1989) https://doi.org/10.1063/1.344203
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Pulsed, high‐current, in‐line reversal electron attachment detector
Mark T. Bernius; Ara Chutjian
J. Appl. Phys. 66, 2783–2788 (1989) https://doi.org/10.1063/1.344204
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Development and quality measurements of cold relativistic electron beam for low‐γ free‐electron lasers
M. Kawai; Y. Kawamura; K. Toyoda
J. Appl. Phys. 66, 2789–2793 (1989) https://doi.org/10.1063/1.344205
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Atomic populations of copper and gold in a room‐temperature metal vapor laser
A. K. Anders; R. C. Tobin
J. Appl. Phys. 66, 2794–2799 (1989) https://doi.org/10.1063/1.344206
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Fifth‐order corrected electromagnetic field components for a fundamental Gaussian beam
J. P. Barton; D. R. Alexander
J. Appl. Phys. 66, 2800–2802 (1989) https://doi.org/10.1063/1.344207
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Wavelength multiple soliton amplification and transmission with an Er3+‐doped optical fiber
Masataka Nakazawa; Yasuo Kimura; Kazunori Suzuki; Hirokazu Kubota
J. Appl. Phys. 66, 2803–2812 (1989) https://doi.org/10.1063/1.344208
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Optimum cavity length for high conversion efficiency quantum well diode lasers
D. P. Bour; A. Rosen
J. Appl. Phys. 66, 2813–2818 (1989) https://doi.org/10.1063/1.344209
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Correlation between forward voltage at low current and catastrophic metal migration failure mechanisms in (AlGa)As laser diodes
William J. Fritz
J. Appl. Phys. 66, 2819–2827 (1989) https://doi.org/10.1063/1.344210
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Finite‐size effects in the frequency response of piezoelectric composite plates
A. Alippi; F. Craciun; E. Molinari
J. Appl. Phys. 66, 2828–2832 (1989) https://doi.org/10.1063/1.344211
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Generalized formulas for reflected pulse response of multilayered structures
E. James Chern; Hatsumi T. C. Nielsen
J. Appl. Phys. 66, 2833–2837 (1989) https://doi.org/10.1063/1.344212
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Acceleration instability in elastic‐plastic solids. I. Numerical simulations of plate acceleration
J. W. Swegle; Allen C. Robinson
J. Appl. Phys. 66, 2838–2858 (1989) https://doi.org/10.1063/1.344190
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Acceleration instability in elastic‐plastic solids. II. Analytical techniques
Allen C. Robinson; J. W. Swegle
J. Appl. Phys. 66, 2859–2872 (1989) https://doi.org/10.1063/1.344191
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An effective medium treatment of the transport properties of a Voronoi tesselated network
Nikolas A. Vrettos; Hironobu Imakoma; Morio Okazaki
J. Appl. Phys. 66, 2873–2878 (1989) https://doi.org/10.1063/1.344192
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Charge exchange effects in ion diodes
T. D. Pointon
J. Appl. Phys. 66, 2879–2887 (1989) https://doi.org/10.1063/1.344193
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The effect of charge exchange processes on ion diode impedance
M. P. Desjarlais
J. Appl. Phys. 66, 2888–2893 (1989) https://doi.org/10.1063/1.344167
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Experimental studies of the laser‐controlled collective ion accelerator
W. W. Destler; J. Rodgers; Z. Segalov
J. Appl. Phys. 66, 2894–2898 (1989) https://doi.org/10.1063/1.344168
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The positive corona in air: A simplified analytic approach
Richard G. Stearns
J. Appl. Phys. 66, 2899–2913 (1989) https://doi.org/10.1063/1.344169
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The negative glow in a magnetic field in a helium discharge
C. Cohen; Yu. M. Kagan; P. Avivi
J. Appl. Phys. 66, 2914–2919 (1989) https://doi.org/10.1063/1.344170
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Statistical time lags in low‐pressure SF6 breakdown
G. A. Woolsey; D. B. Ogle
J. Appl. Phys. 66, 2920–2925 (1989) https://doi.org/10.1063/1.344171
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Model of plasma immersion ion implantation
M. A. Lieberman
J. Appl. Phys. 66, 2926–2929 (1989) https://doi.org/10.1063/1.344172
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Development of a Li− ion source
S. R. Walther; E. C. Morse; K. N. Leung
J. Appl. Phys. 66, 2930–2939 (1989) https://doi.org/10.1063/1.344173
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Anomalous distribution of As during implantation in silicon under self‐annealing conditions
G. Lulli; P. G. Merli; R. Rizzoli; M. Berti; A. V. Drigo
J. Appl. Phys. 66, 2940–2946 (1989) https://doi.org/10.1063/1.344174
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Electron‐beam‐induced dislocations in GaAs and InP single crystals
P. Franzosi; L. Lazzarini; G. Salviati; M. Scaffardi; R. Fieschi
J. Appl. Phys. 66, 2947–2951 (1989) https://doi.org/10.1063/1.344175
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A model of Si diffusion in GaAs based on the effect of the Fermi level
Shaofeng Yu; Ulrich M. Gösele; Teh Y. Tan
J. Appl. Phys. 66, 2952–2961 (1989) https://doi.org/10.1063/1.344176
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The equation of state of platinum to 660 GPa (6.6 Mbar)
N. C. Holmes; J. A. Moriarty; G. R. Gathers; W. J. Nellis
J. Appl. Phys. 66, 2962–2967 (1989) https://doi.org/10.1063/1.344177
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Picosecond transient reflectance of thin metal films
András Miklós; Zoltán Bozóki; András Lörincz
J. Appl. Phys. 66, 2968–2972 (1989) https://doi.org/10.1063/1.344178
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Modeling the diffusion of hydrogen in GaAs
Richard A. Morrow
J. Appl. Phys. 66, 2973–2979 (1989) https://doi.org/10.1063/1.344179
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Structural properties of Hg1−xZnxTe‐CdTe strained layer superlattices and the reduction of threading dislocations from a CdTe buffer layer
J. Petruzzello; D. Olego; X. Chu; J. P. Faurie
J. Appl. Phys. 66, 2980–2983 (1989) https://doi.org/10.1063/1.344180
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Preparation and properties of III‐V nitride thin films
K. Kubota; Y. Kobayashi; K. Fujimoto
J. Appl. Phys. 66, 2984–2988 (1989) https://doi.org/10.1063/1.344181
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Thermal stability of the Cu/PtSi metallurgy
Chin‐An Chang
J. Appl. Phys. 66, 2989–2992 (1989) https://doi.org/10.1063/1.344182
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Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces
Kevin H. Chang; Pallab K. Bhattacharya; Ronald Gibala
J. Appl. Phys. 66, 2993–2998 (1989) https://doi.org/10.1063/1.344183
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Formation of epitaxial yttrium silicide on (111) silicon
Michael P. Siegal; Forrest H. Kaatz; William R. Graham; Jorge J. Santiago; Jan Van der Spiegel
J. Appl. Phys. 66, 2999–3006 (1989) https://doi.org/10.1063/1.344184
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X‐ray analysis of lattice imperfections and distortions in a Si/GaP bilayer
F. Ishizuka; T. Itoh
J. Appl. Phys. 66, 3007–3010 (1989) https://doi.org/10.1063/1.344483
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Solid‐state epitaxy of osmium silicide on (111)Si under reducing atmosphere
Y. S. Chang; M. L. Chou
J. Appl. Phys. 66, 3011–3013 (1989) https://doi.org/10.1063/1.344185
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Low‐temperature formation of polycrystalline silicon films on silicon oxide by pyrolyzing silane in a tungsten heater
Katsuhiro Yokota; Kouji Takeshita; Kazuaki Yamaura; Susumu Tamura
J. Appl. Phys. 66, 3014–3018 (1989) https://doi.org/10.1063/1.344186
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Transmittance and reflectance in situ measurements of semicontinuous gold films during deposition
P. Gadenne; Y. Yagil; G. Deutscher
J. Appl. Phys. 66, 3019–3025 (1989) https://doi.org/10.1063/1.344187
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Perturbed angular correlation studies of dopant atom interactions in silicon
Th. Wichert; M. L. Swanson
J. Appl. Phys. 66, 3026–3037 (1989) https://doi.org/10.1063/1.344188
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A relation between EL2 (Ec−0.81 eV) and EL6 (Ec−0.35 eV) in annealed HB‐GaAs by hydrogen plasma exposure
Hoon Young Cho; Eun Kyu Kim; Suk‐Ki Min
J. Appl. Phys. 66, 3038–3041 (1989) https://doi.org/10.1063/1.344189
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Observation and characterization of deep donor centers (DX centers) in Si‐doped AlAs
Makoto Kasu; Shizuo Fujita; Akio Sasaki
J. Appl. Phys. 66, 3042–3046 (1989) https://doi.org/10.1063/1.344482
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Anomalous mobility and photo‐Hall effect in ZnSe‐GaAs heterostructures
H. van Houten; S. Colak; T. Marshall; D. A. Cammack
J. Appl. Phys. 66, 3047–3055 (1989) https://doi.org/10.1063/1.344159
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The thermoelectric power in 3D quantum‐well structures of Kane‐type semiconductors under large magnetic field
K. P. Ghatak; M. Mondal
J. Appl. Phys. 66, 3056–3059 (1989) https://doi.org/10.1063/1.344160
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Determination of minority‐carrier lifetime and surface recombination velocity by optical‐beam‐induced‐current measurements at different light wavelengths
Th. Flohr; R. Helbig
J. Appl. Phys. 66, 3060–3065 (1989) https://doi.org/10.1063/1.344161
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Monte Carlo study of photogenerated carrier transport in GaAs surface space‐charge fields
Xing Zhou; Thomas Y. Hsiang; R. J. Dwayne Miller
J. Appl. Phys. 66, 3066–3073 (1989) https://doi.org/10.1063/1.344162
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Variation of photoconductivity with doping and optical degradation in hydrogenated amorphous silicon
Richard H. Bube; David Redfield
J. Appl. Phys. 66, 3074–3081 (1989) https://doi.org/10.1063/1.344163
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Valence‐band barrier formation in graded Hg1−xCdxTe heterojunctions with a valence‐band offset included
Frank L. Madarasz; Frank Szmulowicz
J. Appl. Phys. 66, 3082–3087 (1989) https://doi.org/10.1063/1.344164
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Reflectivity of GaSb‐AlSb quantum‐well structures in the range 2–5 eV
C. Ance; C. Raisin; J. P. Ferraton
J. Appl. Phys. 66, 3088–3091 (1989) https://doi.org/10.1063/1.344165
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The charge pumping method: Experiment and complete simulation
F. Hofmann; W. Hänsch
J. Appl. Phys. 66, 3092–3096 (1989) https://doi.org/10.1063/1.344166
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Molecular‐beam epitaxial growth and transport properties of InAs epilayers
Ş. Kalem
J. Appl. Phys. 66, 3097–3103 (1989) https://doi.org/10.1063/1.344141
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Intermolecular charge transfer in 1,4‐dithioketo‐3,6‐diphenyl‐pyrrolo‐ [3,4‐c]‐pyrrole
Jin Mizuguchi; Seiji Homma
J. Appl. Phys. 66, 3104–3110 (1989) https://doi.org/10.1063/1.344142
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Temperature dependence of the dark conductivity and photoconductivity in evaporated thin films of 1,4‐dithioketo‐3,6‐diphenyl‐pyrrolo‐ [3,4‐c]‐pyrrole under a high vacuum or in the atmosphere of oxygen or hydrogen
Jin Mizuguchi
J. Appl. Phys. 66, 3111–3113 (1989) https://doi.org/10.1063/1.344143
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Preparation of a‐SiC:H/a‐GeC:H superlattices by dual magnetron sputtering
N. Saito; T. Yamaguchi
J. Appl. Phys. 66, 3114–3116 (1989) https://doi.org/10.1063/1.344144
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High‐dose magnesium implantations in InP activated by rapid thermal annealing
W. H. van Berlo; G. Landgren
J. Appl. Phys. 66, 3117–3120 (1989) https://doi.org/10.1063/1.344145
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Influence of the screening effect onto the transport parameters of hot 2D electrons in n‐GaAs square quantum wells
G. Zandler; E. Vass
J. Appl. Phys. 66, 3121–3125 (1989) https://doi.org/10.1063/1.344146
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Electron density in quantum well diodes
B. Jogai; C. I. Huang; C. A. Bozada
J. Appl. Phys. 66, 3126–3130 (1989) https://doi.org/10.1063/1.344147
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Effects of post‐deposition argon implantation on the memory properties of plasma‐deposited silicon nitride films
Q. A. Shams; W. D. Brown
J. Appl. Phys. 66, 3131–3135 (1989) https://doi.org/10.1063/1.344148
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Enhancement of the critical current by grain size refinement in Ta‐cosputtered NbN thin films
J. Y. Juang; K. Barmak; D. A. Rudman; R. B. van Dover
J. Appl. Phys. 66, 3136–3143 (1989) https://doi.org/10.1063/1.344149
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Growth and orientation of crystallites in Y‐Ba‐Cu‐O superconductors
Th. Leventouri; M. Calamiotou; V. Perdicatsis; J. S. Faulkner
J. Appl. Phys. 66, 3144–3147 (1989) https://doi.org/10.1063/1.344150
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Epitaxial Y‐Ba‐Cu‐O thin films on MgO deposited by high‐pressure reactive magnetron sputtering
K. Tanabe; D. K. Lathrop; S. E. Russek; R. A. Buhrman
J. Appl. Phys. 66, 3148–3153 (1989) https://doi.org/10.1063/1.344151
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Effect of silver and silver oxide additions on the mechanical and superconducting properties of YBa2Cu3O7−δ superconductors
J. P. Singh; H. J. Leu; R. B. Poeppel; E. Van Voorhees; G. T. Goudey; K. Winsley; Donglu Shi
J. Appl. Phys. 66, 3154–3159 (1989) https://doi.org/10.1063/1.344152
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Flux pinning and scaling laws for superconducting V3Ga
D. P. Hampshire; A. F. Clark; H. Jones
J. Appl. Phys. 66, 3160–3167 (1989) https://doi.org/10.1063/1.344153
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Preparation and characterization of (111)‐oriented Fe3O4 films deposited on sapphire
T. Fujii; M. Takano; R. Katano; Y. Bando; Y. Isozumi
J. Appl. Phys. 66, 3168–3172 (1989) https://doi.org/10.1063/1.344154
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Phase‐diagrammatic behavior of Co‐Cr sputtered films
Masayuki Sagoi; Reiji Nisikawa
J. Appl. Phys. 66, 3173–3177 (1989) https://doi.org/10.1063/1.344155
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Charged point defects in GaAs crystals evaluated by nuclear‐magnetic‐resonance spin echo
Maki Suemitsu; Naoki Nakajo
J. Appl. Phys. 66, 3178–3186 (1989) https://doi.org/10.1063/1.344156
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Theory of the microwave‐frequency magnetic susceptibility of insulating ferri‐ and ferromagnets
J. B. Sokoloff
J. Appl. Phys. 66, 3187–3191 (1989) https://doi.org/10.1063/1.344157
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ac impedance measurement of environmental water in adhesive interfaces
K. M. Takahashi; T. M. Sullivan
J. Appl. Phys. 66, 3192–3201 (1989) https://doi.org/10.1063/1.344158
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Ytterbium as a probe of the local lattice environment in GaxIn(1−x)P crystals
A. Kozanecki; Z. Kaliński; J. Raczyńska; J. M. Langer
J. Appl. Phys. 66, 3202–3206 (1989) https://doi.org/10.1063/1.344135
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Defect‐property correlations in garnet crystals. V. Energy transfer in luminescent yttrium aluminum–yttrium iron garnet solid solutions
S. R. Rotman; C. Warde; H. L. Tuller; J. Haggerty
J. Appl. Phys. 66, 3207–3210 (1989) https://doi.org/10.1063/1.344136
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The role of traps in the restoration of faded holographic images in Bi12SiO20
Alfred E. Attard
J. Appl. Phys. 66, 3211–3216 (1989) https://doi.org/10.1063/1.344137
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Influence of interface quality on structural and optical properties of GaxIn1−xAs/AlyIn1−yAs superlattices lattice matched to (001) InP
L. Tapfer; W. Stolz; K. Ploog
J. Appl. Phys. 66, 3217–3219 (1989) https://doi.org/10.1063/1.344138
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Gain excitation spectrum and acceptor density in CdIn2S4
A. Charlebois; E. Fortin
J. Appl. Phys. 66, 3220–3223 (1989) https://doi.org/10.1063/1.344139
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Optical dispersion relations for Si and Ge
Sadao Adachi
J. Appl. Phys. 66, 3224–3231 (1989) https://doi.org/10.1063/1.344140
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Stability of frequency domain information bits in amorphous organic materials
W. Köhler; J. Zollfrank; J. Friedrich
J. Appl. Phys. 66, 3232–3240 (1989) https://doi.org/10.1063/1.344114
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Novel second‐order nonlinear optical polymers via chemical cross‐linking‐induced vitrification under electric field
Manfred Eich; Bernd Reck; Do Y. Yoon; C. Grant Willson; Gary C. Bjorklund
J. Appl. Phys. 66, 3241–3247 (1989) https://doi.org/10.1063/1.344115
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Ion‐beam‐induced hydrogen release from a‐C:H: A bulk molecular recombination model
M. E. Adel; O. Amir; R. Kalish; L. C. Feldman
J. Appl. Phys. 66, 3248–3251 (1989) https://doi.org/10.1063/1.344116
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X‐ray photoelectron spectroscopy studies on modified polyimide surfaces after ablation with a KrF excimer laser
F. Kokai; H. Saito; T. Fujioka
J. Appl. Phys. 66, 3252–3255 (1989) https://doi.org/10.1063/1.344117
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A mathematical model for a plasma‐assisted downstream etching reactor
Sang‐Kyu Park; Demetre J. Economou
J. Appl. Phys. 66, 3256–3267 (1989) https://doi.org/10.1063/1.344118
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Deposition of aluminum thin films by photochemical surface reaction
Mitsugu Hanabusa; Akira Oikawa; Peng Ying Cai
J. Appl. Phys. 66, 3268–3274 (1989) https://doi.org/10.1063/1.344119
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Magnetic properties of Co‐Cr films and the effects of heat treatment
A. Fartash; H. Oesterreicher
J. Appl. Phys. 66, 3275–3281 (1989) https://doi.org/10.1063/1.344120
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Electrochemical studies on CoCr films as a function of substrate temperature and post‐deposition heat treatment
A. Fartash; H. Oesterreicher
J. Appl. Phys. 66, 3282–3285 (1989) https://doi.org/10.1063/1.344121
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In situ study of the thermal decomposition of B2H6 by combining spectroscopic ellipsometry and Kelvin probe measurements
P. Roca i Cabarrocas; Satyendra Kumar; B. Drevillon
J. Appl. Phys. 66, 3286–3292 (1989) https://doi.org/10.1063/1.344122
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Two‐channel optical pyrometry of metals irradiated by picosecond laser pulses
B. Luther‐Davies; A. P. Radlinski; A. Calka
J. Appl. Phys. 66, 3293–3297 (1989) https://doi.org/10.1063/1.344123
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On the mixing of Cu and Y by Xe ions
P. Bo/rgesen; D. A. Lilienfeld
J. Appl. Phys. 66, 3298–3303 (1989) https://doi.org/10.1063/1.344124
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Nanometer‐size fiber composite synthesis by laser‐induced reactions
Gan‐Moog Chow; Paul G. Klemens; Peter R. Strutt
J. Appl. Phys. 66, 3304–3308 (1989) https://doi.org/10.1063/1.344125
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Gettering of donor impurities by V in GaAs and the growth of semi‐insulating crystals
K. Y. Ko; J. Lagowski; H. C. Gatos
J. Appl. Phys. 66, 3309–3316 (1989) https://doi.org/10.1063/1.344126
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Small particle size distributions from mobility measurements
T. M. Sanders, Jr.; S. R. Forrest
J. Appl. Phys. 66, 3317–3323 (1989) https://doi.org/10.1063/1.344127
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XeCl laser ablation of polyimide: Influence of ambient atmosphere on particulate and gaseous products
Donald L. Singleton; George Paraskevopoulos; Robert S. Irwin
J. Appl. Phys. 66, 3324–3328 (1989) https://doi.org/10.1063/1.344128
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Velocity profiles of species ejected in ultraviolet laser ablation of several polymers examined by time‐of‐flight mass spectroscopy
S. G. Hansen
J. Appl. Phys. 66, 3329–3336 (1989) https://doi.org/10.1063/1.344129
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Effect of InGaAsP surface treatment for indium‐tin‐oxide/InGaAsP/GaAs solar cells
Shuichi Matsubara; Hironobu Narui; Naoki Tsuchiya; N. Shin‐ichi Takahashi; Shoichi Kurita
J. Appl. Phys. 66, 3337–3341 (1989) https://doi.org/10.1063/1.344130
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Magneto‐optic waveguide hysteresis loops of ‘‘planar’’ magnetic garnet films
M. McGlashan‐Powell; R. Wolfe; J. F. Dillon, Jr.; V. J. Fratello
J. Appl. Phys. 66, 3342–3347 (1989) https://doi.org/10.1063/1.344131
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Analysis of a self‐aligned AlGaAs/GaAs heterostructure bipolar transistor: Steady‐state and transient simulations
M. Meyyappan; G. Andrews; H. L. Grubin; J. P. Kreskovsky
J. Appl. Phys. 66, 3348–3354 (1989) https://doi.org/10.1063/1.344132
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The phenomenology of dielectric breakdown in thin silicon dioxide films: Al cathodes and p‐type Si anodes
Robert Falster
J. Appl. Phys. 66, 3355–3370 (1989) https://doi.org/10.1063/1.344133
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A new analytic model for amorphous silicon thin‐film transistors
Michael Shur; Michael Hack; John G. Shaw
J. Appl. Phys. 66, 3371–3380 (1989) https://doi.org/10.1063/1.344481
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Capacitance‐voltage characteristics of amorphous silicon thin‐film transistors
Michael Shur; Michael Hack; John G. Shaw; R. A. Martin
J. Appl. Phys. 66, 3381–3385 (1989) https://doi.org/10.1063/1.344134
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A model calculation for surface plasma‐enhanced internal photoemission in Schottky‐barrier photodiodes
M. J. Cazeca; C. C. Chang; A. S. Karakashian
J. Appl. Phys. 66, 3386–3391 (1989) https://doi.org/10.1063/1.344112
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Mössbauer analysis of spin directions in magnetic recording media: The problem of line area measurements
R. J. Pollard
J. Appl. Phys. 66, 3392–3395 (1989) https://doi.org/10.1063/1.344113
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Application of neutron diffraction to the characterization of residual thermal strains in YBa2Cu3O7−δ/Ag
D. S. Kupperman; J. P. Singh; J. Faber, Jr.; R. L. Hitterman
J. Appl. Phys. 66, 3396–3398 (1989) https://doi.org/10.1063/1.344088
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Phase‐locking of a triangular loop with three Josephson junctions having zero capacitance
Fusao Ichikawa; Takafumi Aomine
J. Appl. Phys. 66, 3399–3401 (1989) https://doi.org/10.1063/1.344089
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In situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 °C
C. W. Nieh; T. L. Lin
J. Appl. Phys. 66, 3402–3404 (1989) https://doi.org/10.1063/1.344090
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Excimer laser photolysis study of NH3 and SO2 mixtures at 193 nm
Tetsuya Ikeda; Minoru Danno; Hiroshi Makihara
J. Appl. Phys. 66, 3404–3406 (1989) https://doi.org/10.1063/1.344091
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Numerical analysis of infrared laser heating in thermoluminescent material layers: The focused laser case
M. E. Grupen‐Shemansky; K. J. Kearfott; E. D. Hirleman
J. Appl. Phys. 66, 3407–3409 (1989) https://doi.org/10.1063/1.344092
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Silicon nitride films prepared using a SiH4/NH3 microwave multipolar plasma
Pierre Boher; Jacques Schneider; Monique Renaud; Yves Hily; Joop Bruines
J. Appl. Phys. 66, 3410–3412 (1989) https://doi.org/10.1063/1.344093
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Substrate temperature lowering in GaAs selective epitaxial growth by molecular‐beam epitaxy
A. Okamoto; K. Ohata
J. Appl. Phys. 66, 3413–3415 (1989) https://doi.org/10.1063/1.344094
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Quantum‐well‐wire growth by molecular‐beam epitaxy: A computer simulation study
K. J. Hugill; S. Clarke; D. D. Vvedensky; B. A. Joyce
J. Appl. Phys. 66, 3415–3417 (1989) https://doi.org/10.1063/1.344095
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Nonresonant third‐order optical nonlinearity of quantum‐confined CdS clusters: A third harmonic generation study
Lap‐Tak Cheng; Norman Herron; Ying Wang
J. Appl. Phys. 66, 3417–3419 (1989) https://doi.org/10.1063/1.344096
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Erratum: ‘‘Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films’’ [J. Appl. Phys. 63, 1442 (1988)]
Y. C Tai; C. H. Mastrangelo; R. S. Muller
J. Appl. Phys. 66, 3420 (1989) https://doi.org/10.1063/1.344503
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