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Broadband nuclear magnetic resonance pulses with two‐dimensional spatial selectivity

Christopher J. Hardy; Harvey E. Cline

J. Appl. Phys. 66, 1513–1516 (1989) https://doi.org/10.1063/1.344411

Abstract

View articletitled, Broadband nuclear magnetic resonance pulses with two‐dimensional spatial selectivity

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Wall charge evolution in discharge tubes

F. L. Curzon

J. Appl. Phys. 66, 1517–1524 (1989) https://doi.org/10.1063/1.344412

Abstract

View articletitled, Wall charge evolution in discharge tubes

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Fabrication and spectral characteristics of a 1.55‐μm distributed feedback laser with a tunable integrated external cavity

B. C. De Cooman; G. L. A. van der Hofstad; P. I. Kuindersma; C. K. Wong; W. Scheepers; L. F. Tiemeyer

J. Appl. Phys. 66, 1525–1529 (1989) https://doi.org/10.1063/1.344413

Abstract

View articletitled, Fabrication and spectral characteristics of a 1.55‐μm distributed feedback laser with a tunable integrated external cavity

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Calculations on temperature profiles in optical recording

A. H. M. Holtslag

J. Appl. Phys. 66, 1530–1543 (1989) https://doi.org/10.1063/1.344493

Abstract

View articletitled, Calculations on temperature profiles in optical recording

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Optical plasma resonance in semiconductors: Novel concepts for modulating far‐infrared light

M. Kuijk; R. Vounckx

J. Appl. Phys. 66, 1544–1548 (1989) https://doi.org/10.1063/1.344414

Abstract

View articletitled, Optical plasma resonance in semiconductors: Novel concepts for modulating far‐infrared light

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Radio‐frequency linac‐driven free‐electron laser configurations

C. M. Tang; P. Sprangle; A. Ting; B. Hafizi

J. Appl. Phys. 66, 1549–1555 (1989) https://doi.org/10.1063/1.344415

Abstract

View articletitled, Radio‐frequency linac‐driven free‐electron laser configurations

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Bleustein–Gulyaev waves in gallium arsenide and other piezoelectric cubic crystals

V. M. Bright; W. D. Hunt

J. Appl. Phys. 66, 1556–1564 (1989) https://doi.org/10.1063/1.344416

Abstract

View articletitled, Bleustein–Gulyaev waves in gallium arsenide and other piezoelectric cubic crystals

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The characterization of high‐frequency ultrasonic fields using a polarimetric optical fiber sensor

H. L. W. Chan; K. S. Chiang; D. C. Price; J. L. Gardner

J. Appl. Phys. 66, 1565–1570 (1989) https://doi.org/10.1063/1.344417

Abstract

View articletitled, The characterization of high‐frequency ultrasonic fields using a polarimetric optical fiber sensor

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Characterization of sub‐10‐μm 30‐ps flash duration point sources for x radiography

Bruce H. Failor; Edward F. Gabl; R. R. Johnson; Chester Shepard

J. Appl. Phys. 66, 1571–1578 (1989) https://doi.org/10.1063/1.344398

Abstract

View articletitled, Characterization of sub‐10‐μm 30‐ps flash duration point sources for x radiography

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A theory of abrupt termination and spontaneous restart of electrical current in surface flashover arcs

A. Kadish; R. T. Robiscoe; William B. Maier II

J. Appl. Phys. 66, 1579–1593 (1989) https://doi.org/10.1063/1.344372

Abstract

View articletitled, A theory of abrupt termination and spontaneous restart of electrical current in surface flashover arcs

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Modeling of plasma‐induced self‐healing in organic dielectrics

J. Kammermaier; G. Rittmayer; S. Birkle

J. Appl. Phys. 66, 1594–1609 (1989) https://doi.org/10.1063/1.344373

Abstract

View articletitled, Modeling of plasma‐induced self‐healing in organic dielectrics

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Electrode breakdown in magnetohydrodynamic plasmas: Stability analysis

A. Satheesh Kumar; Bhumesh Gupta

J. Appl. Phys. 66, 1610–1617 (1989) https://doi.org/10.1063/1.344374

Abstract

View articletitled, Electrode breakdown in magnetohydrodynamic plasmas: Stability analysis

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Cavity perturbation measurement of plasma density in complex geometry rf discharges

R. M. Moroney; A. J. Lichtenberg; M. A. Lieberman

J. Appl. Phys. 66, 1618–1621 (1989) https://doi.org/10.1063/1.344375

Abstract

View articletitled, Cavity perturbation measurement of plasma density in complex geometry rf discharges

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Enhancement of the negative ion flux to surfaces from radio‐frequency processing discharges

L. J. Overzet; J. H. Beberman; J. T. Verdeyen

J. Appl. Phys. 66, 1622–1631 (1989) https://doi.org/10.1063/1.344376

Abstract

View articletitled, Enhancement of the negative ion flux to surfaces from radio‐frequency processing discharges

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A theoretical study of a laser‐irradiated capillary discharge

L. B. Petway; C. A. Back; K. Estabrook; R. W. Lee; A. Zigler

J. Appl. Phys. 66, 1632–1640 (1989) https://doi.org/10.1063/1.344377

Abstract

View articletitled, A theoretical study of a laser‐irradiated capillary discharge

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Modeling of a plasma column produced and sustained by a traveling electromagnetic surface wave

Ivan Zhelyazkov; Evghenia Benova

J. Appl. Phys. 66, 1641–1650 (1989) https://doi.org/10.1063/1.344378

Abstract

View articletitled, Modeling of a plasma column produced and sustained by a traveling electromagnetic surface wave

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Investigation on the phosphorous interstitials in phosphorus‐implanted copper indium disulfide by a simplified total energy calculation

Y. J. Hsu; H. L. Hwang

J. Appl. Phys. 66, 1651–1653 (1989) https://doi.org/10.1063/1.344379

Abstract

View articletitled, Investigation on the phosphorous interstitials in phosphorus‐implanted copper indium disulfide by a simplified total energy calculation

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A prototypical model of a dislocation source capable of generating shear band structures in crystalline solids during shock or impact

C. S. Coffey

J. Appl. Phys. 66, 1654–1657 (1989) https://doi.org/10.1063/1.344380

Abstract

View articletitled, A prototypical model of a dislocation source capable of generating shear band structures in crystalline solids during shock or impact

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Pressure‐induced changes in the crystal structure and electrical properties of bulk InP

D. Patel; C. S. Menoni; I. L. Spain

J. Appl. Phys. 66, 1658–1661 (1989) https://doi.org/10.1063/1.344381

Abstract

View articletitled, Pressure‐induced changes in the crystal structure and electrical properties of bulk InP

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Free‐surface velocity measurement of shock‐compressed alumina powder compact using a Fabry–Perot interferometer

T. Taniguchi; H. Yasuo; K. Kondo; A. B. Sawaoka

J. Appl. Phys. 66, 1662–1666 (1989) https://doi.org/10.1063/1.344382

Abstract

View articletitled, Free‐surface velocity measurement of shock‐compressed alumina powder compact using a Fabry–Perot interferometer

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Single‐stage calculation of the total energy of compositionally modulated III‐V alloys

Frank Glas

J. Appl. Phys. 66, 1667–1670 (1989) https://doi.org/10.1063/1.344383

Abstract

View articletitled, Single‐stage calculation of the total energy of compositionally modulated III‐V alloys

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Mössbauer study of the crystallization of Fe_100−xB_x amorphous alloys (14≤x≤25)

F. H. Sánchez; Y. D. Zhang; J. I. Budnick; R. Hasegawa

J. Appl. Phys. 66, 1671–1675 (1989) https://doi.org/10.1063/1.344384

Abstract

View articletitled, Mössbauer study of the crystallization of Fe100−xBx amorphous alloys (14≤x≤25)

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Modulated optical reflectance measurements on bulk metals and thin metallic layers

P. Alpern; S. Wurm

J. Appl. Phys. 66, 1676–1679 (1989) https://doi.org/10.1063/1.344385

Abstract

View articletitled, Modulated optical reflectance measurements on bulk metals and thin metallic layers

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Growth of BaF₂ and of BaF₂/SrF₂ layers on (001)‐oriented GaAs

H. Clemens; U. Stromberger; P. C. Weilguni; G. Bauer

J. Appl. Phys. 66, 1680–1686 (1989) https://doi.org/10.1063/1.344386

Abstract

View articletitled, Growth of BaF2 and of BaF2/SrF2 layers on (001)‐oriented GaAs

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Critical layer thickness and strain relaxation measurements in GaSb(001)/AlSb structures

H.‐J. Gossmann; B. A. Davidson; G. J. Gualtieri; G. P. Schwartz; A. T. Macrander; S. E. Slusky; M. H. Grabow; W. A. Sunder

J. Appl. Phys. 66, 1687–1694 (1989) https://doi.org/10.1063/1.344387

Abstract

View articletitled, Critical layer thickness and strain relaxation measurements in GaSb(001)/AlSb structures

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Growth studies of molecular‐beam epitaxial ZnSe using reflection high‐energy electron diffraction oscillations

F. S. Turco; M. C. Tamargo

J. Appl. Phys. 66, 1695–1698 (1989) https://doi.org/10.1063/1.344388

Abstract

View articletitled, Growth studies of molecular‐beam epitaxial ZnSe using reflection high‐energy electron diffraction oscillations

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Overlapping electron traps in n‐type silicon studied by capacitance transient spectroscopy

B. G. Svensson; K.‐H. Rydén; B. M. S. Lewerentz

J. Appl. Phys. 66, 1699–1704 (1989) https://doi.org/10.1063/1.344389

Abstract

View articletitled, Overlapping electron traps in n‐type silicon studied by capacitance transient spectroscopy

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The excess carrier lifetime in p‐type HgCdTe measured by photoconductive decay

R. Fastow; Y. Nemirovsky

J. Appl. Phys. 66, 1705–1710 (1989) https://doi.org/10.1063/1.344390

Abstract

View articletitled, The excess carrier lifetime in p‐type HgCdTe measured by photoconductive decay

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Photoluminescence of Cd_1−xMn_xTe films grown by metalorganic chemical vapor deposition

Z. C. Feng; S. Perkowitz; R. Sudharsanan; A. Erbil; K. T. Pollard; A. Rohatgi; J. L. Bradshaw; W. J. Choyke

J. Appl. Phys. 66, 1711–1716 (1989) https://doi.org/10.1063/1.344391

Abstract

View articletitled, Photoluminescence of Cd1−xMnxTe films grown by metalorganic chemical vapor deposition

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Influence of dislocations on electrical properties of large grained polycrystalline silicon cells. I. Model

H. El Ghitani; S. Martinuzzi

J. Appl. Phys. 66, 1717–1722 (1989) https://doi.org/10.1063/1.344392

Abstract

View articletitled, Influence of dislocations on electrical properties of large grained polycrystalline silicon cells. I. Model

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Influence of dislocations on electrical properties of large grained polycrystalline silicon cells. II. Experimental results

H. El Ghitani; S. Martinuzzi

J. Appl. Phys. 66, 1723–1726 (1989) https://doi.org/10.1063/1.344393

Abstract

View articletitled, Influence of dislocations on electrical properties of large grained polycrystalline silicon cells. II. Experimental results

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Edge effect in near‐intrinsic germanium observed with a novel method for resistivity measurements

J. A. M. M. van Haaren; G. L. J. A. Rikken; A. P. van Gelder; H. van Kempen; P. Wyder

J. Appl. Phys. 66, 1727–1738 (1989) https://doi.org/10.1063/1.344394

Abstract

View articletitled, Edge effect in near‐intrinsic germanium observed with a novel method for resistivity measurements

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Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures

D. J. Arent; K. Deneffe; C. Van Hoof; J. De Boeck; G. Borghs

J. Appl. Phys. 66, 1739–1747 (1989) https://doi.org/10.1063/1.344395

Abstract

View articletitled, Strain effects and band offsets in GaAs/InGaAs strained layered quantum structures

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Electrical conduction in a tin‐oxide–silicon interface prepared by spray pyrolysis

Uma Ray Chaudhuri; K. Ramkumar; M. Satyam

J. Appl. Phys. 66, 1748–1752 (1989) https://doi.org/10.1063/1.344396

Abstract

View articletitled, Electrical conduction in a tin‐oxide–silicon interface prepared by spray pyrolysis

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dc and ac transport in molecular‐beam‐epitaxy‐grown metal/ZnSe/GaAs heterojunction structures

T. Marshall; S. Colak; D. Cammack

J. Appl. Phys. 66, 1753–1758 (1989) https://doi.org/10.1063/1.344397

Abstract

View articletitled, dc and ac transport in molecular‐beam‐epitaxy‐grown metal/ZnSe/GaAs heterojunction structures

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Liquid junctions for characterization of electronic materials. II. Photoreflectance and electroreflectance of n‐Si

Wu‐Mian Shen; M. C. A. Fantini; Micha Tomkiewicz; J. P. Gambino

J. Appl. Phys. 66, 1759–1764 (1989) https://doi.org/10.1063/1.344492

Abstract

View articletitled, Liquid junctions for characterization of electronic materials. II. Photoreflectance and electroreflectance of n‐Si

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Liquid junctions for characterization of electronic materials. III. Modulation spectroscopies of reactive ion etching of Si

Wu‐mian Shen; M. C. A. Fantini; Fred H. Pollak; Micha Tomkiewicz; Herbert J. Leary; J. P. Gambino

J. Appl. Phys. 66, 1765–1771 (1989) https://doi.org/10.1063/1.344367

Abstract

View articletitled, Liquid junctions for characterization of electronic materials. III. Modulation spectroscopies of reactive ion etching of Si

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Analysis of the capacitive coupling of Josephson transmission lines

M. Cirillo; A. R. Bishop; P. S. Lomdahl; S. Pace

J. Appl. Phys. 66, 1772–1776 (1989) https://doi.org/10.1063/1.344368

Abstract

View articletitled, Analysis of the capacitive coupling of Josephson transmission lines

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Preparation of a single‐phase (Bi_0.9Pb_0.1)₂Sr₂Ca₂Cu₃O_y ceramic superconductor

Yu Mei; S. M. Green; C. Jiang; H. L. Luo

J. Appl. Phys. 66, 1777–1781 (1989) https://doi.org/10.1063/1.344347

Abstract

View articletitled, Preparation of a single‐phase (Bi0.9Pb0.1)2Sr2Ca2Cu3Oy ceramic superconductor

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Melt‐spun Nd₂(Co_xFe_1−x)₁₄B systems: Optimization of the hard magnetic properties

C. D. Fuerst; J. F. Herbst

J. Appl. Phys. 66, 1782–1788 (1989) https://doi.org/10.1063/1.344348

Abstract

View articletitled, Melt‐spun Nd2(CoxFe1−x)14B systems: Optimization of the hard magnetic properties

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Modeling magneto‐optical domain erasure without cylindrical symmetry

C. M. Savage; M. Watson; P. Meystre

J. Appl. Phys. 66, 1789–1792 (1989) https://doi.org/10.1063/1.344349

Abstract

View articletitled, Modeling magneto‐optical domain erasure without cylindrical symmetry

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Concentration profiling using x‐ray reflectivity: Application to Cu‐Al interfaces

Huaiyu Chen; S. M. Heald

J. Appl. Phys. 66, 1793–1799 (1989) https://doi.org/10.1063/1.344350

Abstract

View articletitled, Concentration profiling using x‐ray reflectivity: Application to Cu‐Al interfaces

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Free‐carrier lifetime and deep‐level luminescence in semi‐insulating GaAs: The influence of indium doping and growth in a magnetic field

K. Leo; W. W. Rühle; P. Nordberg; T. Fujii

J. Appl. Phys. 66, 1800–1804 (1989) https://doi.org/10.1063/1.344351

Abstract

View articletitled, Free‐carrier lifetime and deep‐level luminescence in semi‐insulating GaAs: The influence of indium doping and growth in a magnetic field

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Ion‐assisted deposition of mixed TiO₂‐SiO₂ films

R. P. Netterfield; P. J. Martin; C. G. Pacey; W. G. Sainty; D. R. McKenzie; G. Auchterlonie

J. Appl. Phys. 66, 1805–1809 (1989) https://doi.org/10.1063/1.344352

Abstract

View articletitled, Ion‐assisted deposition of mixed TiO2‐SiO2 films

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Improved electrochromic performance of iridium‐oxide films prepared by thermal oxidation of iridium‐carbon composite films

Yoshiyuki Sato

J. Appl. Phys. 66, 1810–1815 (1989) https://doi.org/10.1063/1.344490

Abstract

View articletitled, Improved electrochromic performance of iridium‐oxide films prepared by thermal oxidation of iridium‐carbon composite films

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Low‐cost technique for preparing Cd_1−xZn_xTe films and solar cells

Bulent M. Basol; Vijay K. Kapur; Michael L. Ferris

J. Appl. Phys. 66, 1816–1821 (1989) https://doi.org/10.1063/1.344353

Abstract

View articletitled, Low‐cost technique for preparing Cd1−xZnxTe films and solar cells

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Thermal hysteresis during phase transition in Ag₂Te thin films: Thickness effect

V. Damodara Das; D. Karunakaran

J. Appl. Phys. 66, 1822–1825 (1989) https://doi.org/10.1063/1.344354

Abstract

View articletitled, Thermal hysteresis during phase transition in Ag2Te thin films: Thickness effect

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Numerical simulation of dynamic consolidation of a SiC fiber‐reinforced aluminum composite

R. L. Williamson; R. N. Wright; G. E. Korth; B. H. Rabin

J. Appl. Phys. 66, 1826–1831 (1989) https://doi.org/10.1063/1.344355

Abstract

View articletitled, Numerical simulation of dynamic consolidation of a SiC fiber‐reinforced aluminum composite

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Quantitative separation of mechanisms for power dissipation in solar cells by photoacoustic and photovoltaic measurements

Harvey Flaisher; Martin Wolf; David Cahen

J. Appl. Phys. 66, 1832–1841 (1989) https://doi.org/10.1063/1.344356

Abstract

View articletitled, Quantitative separation of mechanisms for power dissipation in solar cells by photoacoustic and photovoltaic measurements

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Semiconductor quantum wells as electron wave slab waveguides

T. K. Gaylord; E. N. Glytsis; K. F. Brennan

J. Appl. Phys. 66, 1842–1848 (1989) https://doi.org/10.1063/1.344357

Abstract

View articletitled, Semiconductor quantum wells as electron wave slab waveguides

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Effect of macroscopic stress on accelerated aging of GaInAsP channeled substrate buried heterostructure lasers

V. Swaminathan; L. A. Koszi; M. W. Focht

J. Appl. Phys. 66, 1849–1854 (1989) https://doi.org/10.1063/1.344358

Abstract

View articletitled, Effect of macroscopic stress on accelerated aging of GaInAsP channeled substrate buried heterostructure lasers

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Effects of background Fe concentrations in the annealing of ion‐implanted Si into InP substrates for InP metal‐insulator‐semiconductor field‐effect transistor applications

N. Duhamel; P. Krauz; Y. Gao

J. Appl. Phys. 66, 1855–1857 (1989) https://doi.org/10.1063/1.344359

Abstract

View articletitled, Effects of background Fe concentrations in the annealing of ion‐implanted Si into InP substrates for InP metal‐insulator‐semiconductor field‐effect transistor applications

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A model for the oxidation‐enhanced diffusion of boron in extrinsic silicon

D. Tsoukalas; P. Chenevier

J. Appl. Phys. 66, 1858–1860 (1989) https://doi.org/10.1063/1.344360

Abstract

View articletitled, A model for the oxidation‐enhanced diffusion of boron in extrinsic silicon

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Measurements of carbon thin films using x‐ray reflectivity

Michael F. Toney; Sean Brennan

J. Appl. Phys. 66, 1861–1863 (1989) https://doi.org/10.1063/1.344361

Abstract

View articletitled, Measurements of carbon thin films using x‐ray reflectivity

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Lithium amide (LiNH₂) discharges

D. L. Drummond; L. A. Schlie

J. Appl. Phys. 66, 1864–1865 (1989) https://doi.org/10.1063/1.344362

Abstract

View articletitled, Lithium amide (LiNH2) discharges

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Rapid thermal annealing of YBaCuO thin films deposited on SiO₂ substrates

Q. Y. Ma; E. S. Yang; Chin‐An Chang

J. Appl. Phys. 66, 1866–1868 (1989) https://doi.org/10.1063/1.344363

Abstract

View articletitled, Rapid thermal annealing of YBaCuO thin films deposited on SiO2 substrates

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Influence of stresses on the thermal parameters of chromium‐doped GaAs

J. Jouglar; R. M’Ghaieth; P. L. Vuillermoz; R. Gauthier; P. Pinard; G. Poiblaud

J. Appl. Phys. 66, 1868–1871 (1989) https://doi.org/10.1063/1.344364

Abstract

View articletitled, Influence of stresses on the thermal parameters of chromium‐doped GaAs

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The source term in energy deposition calculations

B. M. Penetrante; J. N. Bardsley

J. Appl. Phys. 66, 1871–1874 (1989) https://doi.org/10.1063/1.344365

Abstract

View articletitled, The source term in energy deposition calculations

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Gold diffusion in chemical‐vapor‐deposited amorphous silicon

L. Calcagno; S. U. Campisano; S. Coffa

J. Appl. Phys. 66, 1874–1876 (1989) https://doi.org/10.1063/1.344491

Abstract

View articletitled, Gold diffusion in chemical‐vapor‐deposited amorphous silicon

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Electrical properties of B‐ion‐implanted Si layer preamorphized by Ge ions

K. Kuriyama; S. Aoki; M. Satoh; M. Kurebayashi

J. Appl. Phys. 66, 1876–1878 (1989) https://doi.org/10.1063/1.344366

Abstract

View articletitled, Electrical properties of B‐ion‐implanted Si layer preamorphized by Ge ions

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Fast linear electro‐optic effect based on cholesteric liquid crystals

J. S. Patel; Sin‐Doo Lee

J. Appl. Phys. 66, 1879–1881 (1989) https://doi.org/10.1063/1.344369

Abstract

View articletitled, Fast linear electro‐optic effect based on cholesteric liquid crystals

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Preparation and properties of Pb‐doped Bi‐Sr‐Ca‐Cu‐O superconductors

H. K. Lee; K. W. Lee; K. Park; N. M. Huang; O. K. Oh; J. S. Kim; K. H. Yoo; Y. B. Kim; C. S. Kim; Y. K. Cho; J. C. Park; S. I. Suck

J. Appl. Phys. 66, 1881–1883 (1989) https://doi.org/10.1063/1.344370

Abstract

View articletitled, Preparation and properties of Pb‐doped Bi‐Sr‐Ca‐Cu‐O superconductors

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Morphological changes of the surface structure of polymers due to excimer laser radiation: A synergetic effect?

Thomas Bahners; Eckhard Schollmeyer

J. Appl. Phys. 66, 1884–1886 (1989) https://doi.org/10.1063/1.344371

Abstract

View articletitled, Morphological changes of the surface structure of polymers due to excimer laser radiation: A synergetic effect?

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Theoretical issues for critical currents of bulk polycrystalline YBa₂Cu₃O_7−δ superconductors

Lin Chen; Yu‐heng Zhang

J. Appl. Phys. 66, 1886–1888 (1989) https://doi.org/10.1063/1.344346

Abstract

View articletitled, Theoretical issues for critical currents of bulk polycrystalline YBa2Cu3O7−δ superconductors

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Erratum: ‘‘Analytical investigation of the junction space‐charge region properties of heterojunction semiconductor devices: Application to n‐AL_zGa_1−zAs/p‐GaAs system’’ [J. Appl. Phys. 63, 5766 (1988)]

S. Noor Mohammad

J. Appl. Phys. 66, 1889 (1989) https://doi.org/10.1063/1.344497

View articletitled, Erratum: ‘‘Analytical investigation of the junction space‐charge region properties of heterojunction semiconductor devices: Application to n‐ALzGa1−zAs/p‐GaAs system’’ [J. Appl. Phys. 63, 5766 (1988)]

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