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Volume 66, Issue 3
1 August 1989
Journal of Applied Physics Cover Image for Volume 66, Issue 3
All Issues
ISSN 0021-8979
EISSN 1089-7550
New ion trap for frequency standard applications
J. D. Prestage; G. J. Dick; L. Maleki
J. Appl. Phys. 66, 1013–1017 (1989) https://doi.org/10.1063/1.343486
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The emittance characteristics of a gallium liquid‐metal ion source
G. D. Alton; P. M. Read
J. Appl. Phys. 66, 1018–1022 (1989) https://doi.org/10.1063/1.343487
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Characterization of GaAs/(GaAs)n(AlAs)m surface‐emitting laser structures through reflectivity and high‐resolution electron microscopy measurements
J. Faist; J.‐D. Ganière; Ph. Buffat; S. Sampson; F.‐K. Reinhart
J. Appl. Phys. 66, 1023–1032 (1989) https://doi.org/10.1063/1.343488
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Long‐term stability in the operation of a chemical oxygen‐iodine laser for industrial use
Hiroo Fujii; Sanichiro Yoshida; Masahiro Iizuka; Toshio Atsuta
J. Appl. Phys. 66, 1033–1037 (1989) https://doi.org/10.1063/1.343489
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Isolation spectra for quantum‐well laser diode optical switches
Masahiro Ikeda
J. Appl. Phys. 66, 1038–1044 (1989) https://doi.org/10.1063/1.343490
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Optical and thermal analyses on multilayered thin films of a phase‐change optical recording disk
H. Koyanagi; T. Ito; N. Miyamoto; Y. Sato; H. Ando
J. Appl. Phys. 66, 1045–1050 (1989) https://doi.org/10.1063/1.344456
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Laser performance of LiSrAlF6:Cr3+
Stephen A. Payne; L. L. Chase; L. K. Smith; Wayne L. Kway; Herbert W. Newkirk
J. Appl. Phys. 66, 1051–1056 (1989) https://doi.org/10.1063/1.343491
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Supermode control and phase front measurements of phase‐locked offset‐coupled laser arrays with a large optical waveguide structure
K. Shinozaki; R. Furukawa; T. Fukunaga; N. Watanabe
J. Appl. Phys. 66, 1057–1064 (1989) https://doi.org/10.1063/1.343492
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Electric‐controlled intrinsic optical bistability in nematic liquid crystals
J. J. Wu; Shu‐Hsia Chen
J. Appl. Phys. 66, 1065–1070 (1989) https://doi.org/10.1063/1.343493
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Determination of the third‐order piezoelectric constants of quartz using the extentional mode of rods
Carl K. Hruska
J. Appl. Phys. 66, 1071–1074 (1989) https://doi.org/10.1063/1.343494
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Refractive fringe diagnostics of sparks in air
M. Bacon; R. N. Campbell; P. F. Cunningham; M. M. Michaelis
J. Appl. Phys. 66, 1075–1079 (1989) https://doi.org/10.1063/1.343495
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Current distribution during the breakdown in a coaxial electrode system
J. Feugeas; O. von Pamel
J. Appl. Phys. 66, 1080–1083 (1989) https://doi.org/10.1063/1.343444
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Arc pressure effect on the population of the Hg 63P levels
D. Karabourniotis; S. Couris; E. Drakakis; J. J. Damelincourt
J. Appl. Phys. 66, 1084–1088 (1989) https://doi.org/10.1063/1.343445
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Linear stability of relativistic space‐charge flow in a magnetically insulated transmission line oscillator
Raymond W. Lemke
J. Appl. Phys. 66, 1089–1094 (1989) https://doi.org/10.1063/1.343446
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Avalanches near a solid insulator in nitrogen gas at atmospheric pressure
S. M. Mahajan; T. S. Sudarshan
J. Appl. Phys. 66, 1095–1102 (1989) https://doi.org/10.1063/1.343447
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Laser‐enhanced plasma anodization
Koki Matsumura
J. Appl. Phys. 66, 1103–1106 (1989) https://doi.org/10.1063/1.343448
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Cathode ions from microsecond aluminum vacuum arcs
H. Craig Miller
J. Appl. Phys. 66, 1107–1112 (1989) https://doi.org/10.1063/1.343449
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A generalized plasma etching model with an oblique magnetic field
Emad Zawaideh; N. S. Kim
J. Appl. Phys. 66, 1113–1121 (1989) https://doi.org/10.1063/1.343450
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Microscopic origin of anelastic relaxations in polyethylene oxide‐sodium thiocyanate complexes
A. Bartolotta; E. Bonetti; G. Carini; G. DiMarco
J. Appl. Phys. 66, 1122–1126 (1989) https://doi.org/10.1063/1.343451
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Properties and structure of PbO‐PbF2‐B2O3 glasses
Carole A. Gressler; James E. Shelby
J. Appl. Phys. 66, 1127–1131 (1989) https://doi.org/10.1063/1.343452
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Charge‐controlled phenomena in the surface‐stabilized ferroelectric liquid‐crystal structure
W. J. A. M. Hartmann
J. Appl. Phys. 66, 1132–1136 (1989) https://doi.org/10.1063/1.343453
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Trapping of deuterium by helium bubbles and defects in ion‐implanted tantalum
S. R. Lee; S. M. Myers; R. G. Spulak, Jr.
J. Appl. Phys. 66, 1137–1148 (1989) https://doi.org/10.1063/1.343454
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Calcium fluoroaluminate glasses
James E. Shelby; Cathy M. Shaw; Marie S. Spess
J. Appl. Phys. 66, 1149–1154 (1989) https://doi.org/10.1063/1.343455
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Structural and electrical properties of B‐ and Ge‐implanted Si
R. Turan; B. Hugsted; O. M. Lo/nsjo/; T. G. Finstad
J. Appl. Phys. 66, 1155–1158 (1989) https://doi.org/10.1063/1.343456
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Observation of nonlinearity in e‐beam evaporation from a water‐cooled crucible
M. S. Bhatia; A. Joshi; K. Patel; U. K. Chatterjee
J. Appl. Phys. 66, 1159–1162 (1989) https://doi.org/10.1063/1.343457
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High‐temperature interaction studies of C/Cu/SiO2/Si and related structures
Chin‐An Chang
J. Appl. Phys. 66, 1163–1169 (1989) https://doi.org/10.1063/1.344454
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Thermally induced structural change of a‐Ge:H/a‐GeNx multilayer structures
I. Honma; H. Komiyama; K. Tanaka
J. Appl. Phys. 66, 1170–1179 (1989) https://doi.org/10.1063/1.343458
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Transition from thermal‐ to electron‐impact decomposition of diborane in plasma‐enhanced chemical vapor deposition of boron films from B2H6+He
Shojiro Komatsu; Yusuke Moriyoshi
J. Appl. Phys. 66, 1180–1184 (1989) https://doi.org/10.1063/1.343459
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Point‐of‐use arsine generation for organometallic vapor‐phase epitaxial growth
K. A. Salzman; G. A. Davis
J. Appl. Phys. 66, 1185–1189 (1989) https://doi.org/10.1063/1.343460
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Window size effect on lateral growth of nickel silicide
Awatar Singh; W. S. Khokle; M. Prudenziati; G. Majni; B. Morten
J. Appl. Phys. 66, 1190–1194 (1989) https://doi.org/10.1063/1.343461
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Elimination of thermally induced biaxial stress in GaAs on Si layers by post‐growth patterning
J. P. van der Ziel; Naresh Chand; J. S. Weiner
J. Appl. Phys. 66, 1195–1198 (1989) https://doi.org/10.1063/1.343462
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An analysis of complex spectra from deep level transient capacitance measurements
Ermanno Di Zitti; Giacomo M. Bisio; Pier Giorgio Fuochi; Bruno V. Passerini; Mauro Zambelli
J. Appl. Phys. 66, 1199–1205 (1989) https://doi.org/10.1063/1.343463
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Very shallow donors in n‐type GaAs
M. Benzaquen; D. Walsh
J. Appl. Phys. 66, 1206–1208 (1989) https://doi.org/10.1063/1.343464
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Calculation of the transverse acoustoelectric voltage in a piezoelectric‐extrinsic semiconductor structure
P. E. Lippens; M. Lannoo; J. F. Pouliquen
J. Appl. Phys. 66, 1209–1216 (1989) https://doi.org/10.1063/1.343465
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Mechanism of electrostatic potential conduction in semi‐insulating substrates
Yasuo Ohno; Norio Goto
J. Appl. Phys. 66, 1217–1221 (1989) https://doi.org/10.1063/1.343466
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Filamentary structure and transport in corrugated InGaAs/InP superlattices grown by vapor levitation epitaxy
S. J. Allen, Jr.; P. Bastos; H. M. Cox; F. DeRosa; D. M. Hwang; L. Nazar
J. Appl. Phys. 66, 1222–1226 (1989) https://doi.org/10.1063/1.343467
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Resonant tunneling time delay and quantum well sheet density
K. M. S. V. Bandara; D. D. Coon; Hong Zhao
J. Appl. Phys. 66, 1227–1230 (1989) https://doi.org/10.1063/1.343468
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Interface charge control of directly bonded silicon structures
Stefan Bengtsson; Olof Engström
J. Appl. Phys. 66, 1231–1239 (1989) https://doi.org/10.1063/1.343469
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Density of states and linewidths of quantum wells with applied electric field
Walter L. Bloss
J. Appl. Phys. 66, 1240–1243 (1989) https://doi.org/10.1063/1.343470
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Plasma‐induced fixed oxide charge
Jan Bos; Menso Hendriks
J. Appl. Phys. 66, 1244–1251 (1989) https://doi.org/10.1063/1.344449
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Absorption at radio frequencies in superconducting Y1Ba2Cu3Oy
Stephen Ducharme; R. Durny; J. Hautala; D. J. Zheng; P. C. Taylor; O. G. Symko; S. Kulkarni
J. Appl. Phys. 66, 1252–1260 (1989) https://doi.org/10.1063/1.344450
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Microwave absorption of aligned crystalline grains of YBa2Cu3O7−x
M. Poirier; G. Quirion; B. Quirion; F. D’Orazio; J. P. Thiel; W. P. Halperin; K. R. Poeppelmeier
J. Appl. Phys. 66, 1261–1264 (1989) https://doi.org/10.1063/1.344423
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Microstructure‐property correlations in the Bi(Pb)‐Sr‐Ca‐Cu‐O superconducting system
R. Ramesh; S. M. Green; Yu Mei; A. E. Manzi; H. L. Luo
J. Appl. Phys. 66, 1265–1272 (1989) https://doi.org/10.1063/1.344424
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Thermomagnetic switching on rare‐earth transition‐metal alloy magneto‐optic disks
J. H. Crasemann; P. Hansen; M. Rosenkranz; K. Witter
J. Appl. Phys. 66, 1273–1278 (1989) https://doi.org/10.1063/1.344425
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Effects of parallel compressions on ring‐shaped polycrystalline ferrimagnetic samples
M. Le Floc’H
J. Appl. Phys. 66, 1279–1284 (1989) https://doi.org/10.1063/1.344426
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Analysis of domain structure by calculating magnetostatic energy for magnetic thin film
Chiaki Saka; Kazuo Shiiki; Kiminari Shinagawa
J. Appl. Phys. 66, 1285–1290 (1989) https://doi.org/10.1063/1.344427
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Magnetization reversal in CoCr perpendicular thin films
Jian‐Gang Zhu; H. Neal Bertram
J. Appl. Phys. 66, 1291–1307 (1989) https://doi.org/10.1063/1.344428
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A new analysis of the results of thermally stimulated measurements in polymers
Jean‐Pierre Crine
J. Appl. Phys. 66, 1308–1313 (1989) https://doi.org/10.1063/1.344429
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Charge transfer in ZnS‐type electroluminescence
E. Bringuier
J. Appl. Phys. 66, 1314–1325 (1989) https://doi.org/10.1063/1.344430
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Ellipsometric measurement of the optical constants of solid and molten aluminum and copper at λ=10.6 μm
M. Brückner; J. H. Schäfer; J. Uhlenbusch
J. Appl. Phys. 66, 1326–1332 (1989) https://doi.org/10.1063/1.344431
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Optical properties of electrochromic vanadium pentoxide
Stuart F. Cogan; Nguyet M. Nguyen; Stephen J. Perrotti; R. David Rauh
J. Appl. Phys. 66, 1333–1337 (1989) https://doi.org/10.1063/1.344432
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Spectroscopic study of CdTe layers grown by molecular‐beam epitaxy on (001) and (111) Cd0.96Zn0.04Te substrates
F. Dal’Bo; G. Lentz; N. Magnea; H. Mariette; Le Si Dang; J. L. Pautrat
J. Appl. Phys. 66, 1338–1346 (1989) https://doi.org/10.1063/1.344433
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Phonon‐assisted stimulated emission in strained‐layer AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well heterostructures
D. W. Nam; N. Holonyak, Jr.; K. C. Hsieh; P. Gavrilovic; K. Meehan; W. Stutius; J. E. Williams
J. Appl. Phys. 66, 1347–1352 (1989) https://doi.org/10.1063/1.344434
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Infrared reflection spectroscopy of the SiO2‐silicon interface
J. E. Olsen; F. Shimura
J. Appl. Phys. 66, 1353–1358 (1989) https://doi.org/10.1063/1.344435
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Laser‐induced grating spectroscopy of cadmium telluride
Mark S. Petrovic; Andrzej Suchocki; Richard C. Powell; Gene Cantwell; Jeff Aldridge
J. Appl. Phys. 66, 1359–1365 (1989) https://doi.org/10.1063/1.344436
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Defect‐property correlations in garnet crystals. IV. The optical properties of nickel‐doped yttrium aluminum garnet
S. R. Rotman; M. Roth; H. L. Tuller; C. Warde
J. Appl. Phys. 66, 1366–1369 (1989) https://doi.org/10.1063/1.344437
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Photoablation of polymers at 193 nm: Shot‐to‐shot study of emission spectra, etch depths, and transmission
Subhash Deshmukh; Erhard W. Rothe; Gene P. Reck
J. Appl. Phys. 66, 1370–1374 (1989) https://doi.org/10.1063/1.344438
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Characterization of subsurface damage in GaAs processed by Ga+ focused ion‐beam‐assisted Cl2 etching using photoluminescence
M. Taneya; Y. Sugimoto; K. Akita
J. Appl. Phys. 66, 1375–1381 (1989) https://doi.org/10.1063/1.344439
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Effect of sintering aids on the electrical properties of positive temperature coefficient of resistivity BaTiO3 ceramics
Hsiu‐Fung Cheng
J. Appl. Phys. 66, 1382–1387 (1989) https://doi.org/10.1063/1.344440
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Mechanics of the silica cap during zone melting of Si films
D. Dutartre
J. Appl. Phys. 66, 1388–1391 (1989) https://doi.org/10.1063/1.344441
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CO2 laser patterning of plasma‐deposited high Tc superconducting thick films
Usha Varshney; R. J. Churchill; H. P. Groger; A. I. Kingon
J. Appl. Phys. 66, 1392–1396 (1989) https://doi.org/10.1063/1.344442
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NO dissociation on polycrystalline palladium studied with a Pd‐metal‐oxide‐semiconductor structure
Helen Dannetun; Lars‐Gunnar Petersson
J. Appl. Phys. 66, 1397–1402 (1989) https://doi.org/10.1063/1.344443
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Ion‐beam direct‐write mechanisms in palladium acetate films
M. E. Gross; W. L. Brown; L. R. Harriott; K. D. Cummings; J. Linnros; H. Funsten
J. Appl. Phys. 66, 1403–1410 (1989) https://doi.org/10.1063/1.344444
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Study of ultraviolet‐laser ablation products of several polymers using time‐of‐flight mass spectroscopy
S. G. Hansen
J. Appl. Phys. 66, 1411–1422 (1989) https://doi.org/10.1063/1.344445
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Dynamics of heterostructure hot‐electron diodes
D. Arnold; K. Hess; T. Higman; J. J. Coleman; G. J. Iafrate
J. Appl. Phys. 66, 1423–1427 (1989) https://doi.org/10.1063/1.344446
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Distributed feedback guided surface acoustic wave microresonator
G. Golan; G. Griffel; A. Seidman; N. Croitoru
J. Appl. Phys. 66, 1428–1434 (1989) https://doi.org/10.1063/1.344447
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A new approach to calculate the substrate current and oxide injection in a metal‐oxide‐semiconductor field‐effect transistor
W. Hänsch; A. v. Schwerin
J. Appl. Phys. 66, 1435–1438 (1989) https://doi.org/10.1063/1.344448
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Dependence of GaAs‐AlxGa1−xAs heterostructures on Al composition for metal‐semiconductor field‐effect transistor operation
Kenji Hiruma; Mitsuhiro Mori; Hiroji Kakibayashi; Ayako Ihara; Susumu Takahashi; Eiji Yanokura
J. Appl. Phys. 66, 1439–1443 (1989) https://doi.org/10.1063/1.344418
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Radiation effects on ferroelectric thin‐film memories: Retention failure mechanisms
J. F. Scott; C. A. Araujo; H. Brett Meadows; L. D. McMillan; A. Shawabkeh
J. Appl. Phys. 66, 1444–1453 (1989) https://doi.org/10.1063/1.344419
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The limits of resonant tunneling diode subharmonic mixer performance
P. M. Smith; D. R. Conn; J. Xu
J. Appl. Phys. 66, 1454–1458 (1989) https://doi.org/10.1063/1.344420
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Electromagnetic mechanism of magnetic nerve stimulation
Masuhiro Yamaguchi; Satoshi Yamada; Nobuo Daimon; Isao Yamamoto; Tadashi Kawakami; Toshibumi Takenaka
J. Appl. Phys. 66, 1459–1465 (1989) https://doi.org/10.1063/1.344421
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Array modes of multiple‐stripe diode lasers: A broad‐area mode coupling approach
J. M. Verdiell; H. Rajbenbach; J. P. Huignard
J. Appl. Phys. 66, 1466–1468 (1989) https://doi.org/10.1063/1.344422
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Shielded‐source, short‐pulse microwave propagation experiments
W. W. Destler; Z. Segalov; J. Rodgers
J. Appl. Phys. 66, 1469–1471 (1989) https://doi.org/10.1063/1.344399
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Propagation of electromagnetic waves of crossroads with a reflector inside a tunnel
Yasushi Murakami; Jiro Chiba
J. Appl. Phys. 66, 1471–1474 (1989) https://doi.org/10.1063/1.344400
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The role of point defects in anomalous diffusion of implanted boron in silicon
Xi‐mao Bao; Qiang Guo; Mei‐sheng Hu; Duan Feng
J. Appl. Phys. 66, 1475–1477 (1989) https://doi.org/10.1063/1.344401
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High Tc Y‐Ba‐Cu‐O thin films on Si substrates
Š. Chromik; J. Sith; V. Štrbík; J. Schilder; V. Šmatko; Š. Beňačka; V. Kliment; J. Levársky
J. Appl. Phys. 66, 1477–1480 (1989) https://doi.org/10.1063/1.344402
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Preparation and transport properties of high‐Tc superconducting thick films
J. M. Aponte; M. Octavio
J. Appl. Phys. 66, 1480–1482 (1989) https://doi.org/10.1063/1.344403
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Semiconductor electron‐wave slab waveguides
T. K. Gaylord; E. N. Glytsis; K. F. Brennan
J. Appl. Phys. 66, 1483–1485 (1989) https://doi.org/10.1063/1.344404
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X‐ray photoelectron spectroscopy of Si/Pt and Pt/Si layers on GaAs
Tsukasa Kuroda; Hiroaki Iwakuro
J. Appl. Phys. 66, 1486–1488 (1989) https://doi.org/10.1063/1.344405
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Photoluminescence line shape of excitons in GaAs single‐quantum wells with and without heterointerface ordering
K. Fujiwara; K. Kanamoto; N. Tsukada; H. Miyatake; H. Koyama
J. Appl. Phys. 66, 1488–1491 (1989) https://doi.org/10.1063/1.344406
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Suppression of acceptor deactivation in silicon by argon‐ion implantation damage
S. Ashok; K. Srikanth
J. Appl. Phys. 66, 1491–1494 (1989) https://doi.org/10.1063/1.344407
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Semiconductor biased superlattice tunable electron interference filter/emitter
E. N. Glytsis; T. K. Gaylord; K. F. Brennan
J. Appl. Phys. 66, 1494–1497 (1989) https://doi.org/10.1063/1.344408
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Defining the quality of a high‐Tc superconductor
A. Mehdaoui; B. Loegel; D. Bolmont
J. Appl. Phys. 66, 1497–1500 (1989) https://doi.org/10.1063/1.344409
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The isolated layer model and transfer impedances for AlxGa1−xAs/GaAs heterostructures
Z.‐M. Li; S. P. McAlister; C. M. Hurd
J. Appl. Phys. 66, 1500–1503 (1989) https://doi.org/10.1063/1.344410
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Erratum: ‘‘Equivalent dipole moments of helical arrangements of small, isotropic, point‐polarizable scatterers: Application to chiral polymer design’’ [J. Appl. Phys. 63, 280 (1988)]
Vasundara V. Varadan; Akhlesh Lakhtakia; Vijay K. Varadan
J. Appl. Phys. 66, 1504 (1989) https://doi.org/10.1063/1.344495
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Erratum: ‘‘An unstable resonator with a phase‐unifying output coupler to extract a large uniphase beam of a filled‐in circular pattern’’ [J. Appl. Phys. 65, 17 (1989)]
Koji Yasui; Shigenori Yagi; Masaaki Tanaka
J. Appl. Phys. 66, 1504 (1989) https://doi.org/10.1063/1.344496
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A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Phase-change materials and their applications
Nelson Sepúlveda, Yunqi Cao
Decoding diffraction and spectroscopy data with machine learning: A tutorial
D. Vizoso, R. Dingreville
  • Online ISSN 1089-7550
  • Print ISSN 0021-8979

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