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Energy pooling and associative ionization following laser excitation of mercury vapor

Sara Majetich; Elisa Mangle Boczar; John R. Wiesenfeld

J. Appl. Phys. 66, 475–481 (1989) https://doi.org/10.1063/1.344459

Abstract

View articletitled, Energy pooling and associative ionization following laser excitation of mercury vapor

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Impurity‐induced layer disordering in In_0.5(Al_x Ga_1−x)_0.5P‐InGaP quantum‐well heterostructures: Visible‐spectrum‐buried heterostructure lasers

J. M. Dallesasse; W. E. Plano; D. W. Nam; K. C. Hsieh; J. E. Baker; N. Holonyak, Jr.; C. P. Kuo; R. M. Fletcher; T. D. Osentowski; M. G. Craford

J. Appl. Phys. 66, 482–487 (1989) https://doi.org/10.1063/1.343562

Abstract

View articletitled, Impurity‐induced layer disordering in In0.5(Alx Ga1−x)0.5P‐InGaP quantum‐well heterostructures: Visible‐spectrum‐buried heterostructure lasers

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Steady‐state temperature profiles in thermally thin substrates induced by arbitrarily shaped laser beams

K. Imen; J. Y. Lin; S. D. Allen

J. Appl. Phys. 66, 488–491 (1989) https://doi.org/10.1063/1.343563

Abstract

View articletitled, Steady‐state temperature profiles in thermally thin substrates induced by arbitrarily shaped laser beams

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The effect of electrode area ratio on low‐frequency glow discharges

Richard A. Gottscho; Geoffrey R. Scheller; David Stoneback; Thomas Intrator

J. Appl. Phys. 66, 492–500 (1989) https://doi.org/10.1063/1.343564

Abstract

View articletitled, The effect of electrode area ratio on low‐frequency glow discharges

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Resonant and nonresonant decay instability of a Langmuir wave in a plasma cylinder

Swapan Konar; V. K. Jain

J. Appl. Phys. 66, 501–504 (1989) https://doi.org/10.1063/1.343565

Abstract

View articletitled, Resonant and nonresonant decay instability of a Langmuir wave in a plasma cylinder

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Cathode spot phenomena in titanium vacuum arcs

P. D. Swift; D. R. McKenzie; I. S. Falconer; P. J. Martin

J. Appl. Phys. 66, 505–512 (1989) https://doi.org/10.1063/1.343566

Abstract

View articletitled, Cathode spot phenomena in titanium vacuum arcs

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Ion beam mixing of aluminum and titanium

P. Borgesen; D. A. Lilienfield; H. H. Johnson

J. Appl. Phys. 66, 513–519 (1989) https://doi.org/10.1063/1.343567

Abstract

View articletitled, Ion beam mixing of aluminum and titanium

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Lattice‐mismatch‐generated dislocation structures and their confinement using superlattices in heteroepitaxial GaAs/InP and InP/GaAs grown by chemical beam epitaxy

S. N. G. Chu; W. T. Tsang; T. H. Chiu; A. T. Macrander

J. Appl. Phys. 66, 520–530 (1989) https://doi.org/10.1063/1.343568

Abstract

View articletitled, Lattice‐mismatch‐generated dislocation structures and their confinement using superlattices in heteroepitaxial GaAs/InP and InP/GaAs grown by chemical beam epitaxy

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Impurity dependence of film‐edge‐induced dislocations in silicon

C. K. Huang; R. J. Jaccodine

J. Appl. Phys. 66, 531–535 (1989) https://doi.org/10.1063/1.343569

Abstract

View articletitled, Impurity dependence of film‐edge‐induced dislocations in silicon

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Formation of polyhedral N₂ bubbles during reactive sputter deposition of epitaxial TiN(100) films

L. Hultman; J.‐E. Sundgren; J. E. Greene

J. Appl. Phys. 66, 536–544 (1989) https://doi.org/10.1063/1.343570

Abstract

View articletitled, Formation of polyhedral N2 bubbles during reactive sputter deposition of epitaxial TiN(100) films

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Study of the interdiffusion of GaAs‐AlGaAs interfaces during rapid thermal annealing of ion‐implanted structures

K. B. Kahen; G. Rajeswaran

J. Appl. Phys. 66, 545–551 (1989) https://doi.org/10.1063/1.343571

Abstract

View articletitled, Study of the interdiffusion of GaAs‐AlGaAs interfaces during rapid thermal annealing of ion‐implanted structures

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Hydrogen desorption from crystalline silicon and its modification due to the presence of dislocations

C. Kisielowski‐Kemmerich; W. Beyer

J. Appl. Phys. 66, 552–558 (1989) https://doi.org/10.1063/1.343572

Abstract

View articletitled, Hydrogen desorption from crystalline silicon and its modification due to the presence of dislocations

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Structural anomalies in undoped gallium arsenide observed in high‐resolution diffraction imaging with monochromatic synchrotron radiation

B. Steiner; M. Kuriyama; R. C. Dobbyn; U. Laor; D. Larson; M. Brown

J. Appl. Phys. 66, 559–568 (1989) https://doi.org/10.1063/1.343573

Abstract

View articletitled, Structural anomalies in undoped gallium arsenide observed in high‐resolution diffraction imaging with monochromatic synchrotron radiation

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Structural, optical, and spin properties of hydrogenated amorphous silicon‐germanium alloys

M. Stutzmann; R. A. Street; C. C. Tsai; J. B. Boyce; S. E. Ready

J. Appl. Phys. 66, 569–592 (1989) https://doi.org/10.1063/1.343574

Abstract

View articletitled, Structural, optical, and spin properties of hydrogenated amorphous silicon‐germanium alloys

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Dynamic unloading behavior of soda lime glass

C. M. Lopatin; S. J. Bless; N. S. Brar

J. Appl. Phys. 66, 593–595 (1989) https://doi.org/10.1063/1.343575

Abstract

View articletitled, Dynamic unloading behavior of soda lime glass

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Lubricating performance enhancement of amorphous silicon carbide film by annealing effects and microbeam analyses of the tribological interface

Iwao Sugimoto; Shojiro Miyake

J. Appl. Phys. 66, 596–604 (1989) https://doi.org/10.1063/1.343576

Abstract

View articletitled, Lubricating performance enhancement of amorphous silicon carbide film by annealing effects and microbeam analyses of the tribological interface

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Secondary ion mass spectrometry and electrical characterization of Zn diffusion in n‐type InP

C. Blaauw; F. R. Shepherd; D. Eger

J. Appl. Phys. 66, 605–610 (1989) https://doi.org/10.1063/1.343525

Abstract

View articletitled, Secondary ion mass spectrometry and electrical characterization of Zn diffusion in n‐type InP

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Thermal reaction between Pt thin films and Si_xGe_1−x alloys

Q. Z. Hong; J. W. Mayer

J. Appl. Phys. 66, 611–615 (1989) https://doi.org/10.1063/1.343526

Abstract

View articletitled, Thermal reaction between Pt thin films and SixGe1−x alloys

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Evaluation of crystalline quality of heteroepitaxial yttria‐stabilized zirconia films on silicon by means of ion beam channeling

Hirofumi Fukumoto; Takeshi Imura; Yukio Osaka; Fumitaka Nishiyama

J. Appl. Phys. 66, 616–618 (1989) https://doi.org/10.1063/1.344457

Abstract

View articletitled, Evaluation of crystalline quality of heteroepitaxial yttria‐stabilized zirconia films on silicon by means of ion beam channeling

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Structure and polarity of {111} CdTe on {100} GaAs

S. R. Glanvill; C. J. Rossouw; M. S. Kwietniak; G. N. Pain; T. Warmiński; L. S. Wieluński

J. Appl. Phys. 66, 619–624 (1989) https://doi.org/10.1063/1.343527

Abstract

View articletitled, Structure and polarity of {111} CdTe on {100} GaAs

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X‐ray small‐angle scattering analysis of porous silicon layers

P. Goudeau; A. Naudon; G. Bomchil; R. Herino

J. Appl. Phys. 66, 625–628 (1989) https://doi.org/10.1063/1.343528

Abstract

View articletitled, X‐ray small‐angle scattering analysis of porous silicon layers

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Si (111) surface cleaning using atomic hydrogen and SiH₂ studied using reflection high‐energy electron diffraction

Hiroyuki Hirayama; Toru Tatsumi

J. Appl. Phys. 66, 629–633 (1989) https://doi.org/10.1063/1.343529

Abstract

View articletitled, Si (111) surface cleaning using atomic hydrogen and SiH2 studied using reflection high‐energy electron diffraction

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Heteroepitaxy of Si films on a Ge(100)‐2×1 surface

H. Kawabata; H. Ueba; C. Tatsuyama

J. Appl. Phys. 66, 634–639 (1989) https://doi.org/10.1063/1.343530

Abstract

View articletitled, Heteroepitaxy of Si films on a Ge(100)‐2×1 surface

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Flow‐rate modulation epitaxy of GaAs and AlGaAs

Naoki Kobayashi; Toshiki Makimoto; Yoshiharu Yamauchi; Yoshiji Horikoshi

J. Appl. Phys. 66, 640–651 (1989) https://doi.org/10.1063/1.343531

Abstract

View articletitled, Flow‐rate modulation epitaxy of GaAs and AlGaAs

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Effects of methylarsine homologs (CH₃)_nAsH_3−n on the metalorganic vapor‐phase epitaxy of GaAs

R. M. Lum; J. K. Klingert; D. W. Kisker

J. Appl. Phys. 66, 652–655 (1989) https://doi.org/10.1063/1.343532

Abstract

View articletitled, Effects of methylarsine homologs (CH3)nAsH3−n on the metalorganic vapor‐phase epitaxy of GaAs

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Implant‐induced high‐resistivity regions in InP and InGaAs

S. J. Pearton; C. R. Abernathy; M. B. Panish; R. A. Hamm; L. M. Lunardi

J. Appl. Phys. 66, 656–662 (1989) https://doi.org/10.1063/1.343533

Abstract

View articletitled, Implant‐induced high‐resistivity regions in InP and InGaAs

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Rapid thermal annealing of GaAs in a graphite susceptor—comparison with proximity annealing

S. J. Pearton; R. Caruso

J. Appl. Phys. 66, 663–665 (1989) https://doi.org/10.1063/1.343534

Abstract

View articletitled, Rapid thermal annealing of GaAs in a graphite susceptor—comparison with proximity annealing

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Formation of the Ni‐SiC(001) interface studied by high‐resolution ion backscattering

W. F. J. Slijkerman; A. E. M. J. Fischer; J. F. van der Veen; I. Ohdomari; S. Yoshida; S. Misawa

J. Appl. Phys. 66, 666–673 (1989) https://doi.org/10.1063/1.343535

Abstract

View articletitled, Formation of the Ni‐SiC(001) interface studied by high‐resolution ion backscattering

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Monte Carlo studies of electronic transport in compensated InP

Julio Costa; Andrzej Peczalski; Michael Shur

J. Appl. Phys. 66, 674–679 (1989) https://doi.org/10.1063/1.343536

Abstract

View articletitled, Monte Carlo studies of electronic transport in compensated InP

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Conformal mapping and the current distributions in Al_xGa_1−xAs/GaAs heterostructures

Z.‐M. Li; S. P. McAlister

J. Appl. Phys. 66, 680–685 (1989) https://doi.org/10.1063/1.343537

Abstract

View articletitled, Conformal mapping and the current distributions in AlxGa1−xAs/GaAs heterostructures

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The electric field dependence of the mobility in molecularly doped polymers

L. B. Schein; A. Peled; D. Glatz

J. Appl. Phys. 66, 686–692 (1989) https://doi.org/10.1063/1.343538

Abstract

View articletitled, The electric field dependence of the mobility in molecularly doped polymers

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Derivation and correction of the Tsu–Esaki tunneling current formula

K. M. S. V. Bandara; D. D. Coon

J. Appl. Phys. 66, 693–696 (1989) https://doi.org/10.1063/1.343539

Abstract

View articletitled, Derivation and correction of the Tsu–Esaki tunneling current formula

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Properties of the two‐dimensional electron gas in modulation‐doped GaInAs(P)/InP structures grown by low‐pressure metalorganic vapor‐phase epitaxy

D. Grützmacher; R. Meyer; P. Balk; C. Berg; T. Schäpers; H. Lüth; M. Zachau; F. Koch

J. Appl. Phys. 66, 697–703 (1989) https://doi.org/10.1063/1.343540

Abstract

View articletitled, Properties of the two‐dimensional electron gas in modulation‐doped GaInAs(P)/InP structures grown by low‐pressure metalorganic vapor‐phase epitaxy

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Estimate of the escape time of resonant tunneling electrons from a quantum well in double‐barrier heterostructures

Benyuan Gu; Lei Gu; Miao He

J. Appl. Phys. 66, 704–707 (1989) https://doi.org/10.1063/1.343541

Abstract

View articletitled, Estimate of the escape time of resonant tunneling electrons from a quantum well in double‐barrier heterostructures

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p‐n junctions from sputtered Ge₂₅Se₇₅₋_xBi_x films

P. Kounavis; E. Mytilineou; M. Roilos

J. Appl. Phys. 66, 708–710 (1989) https://doi.org/10.1063/1.343542

Abstract

View articletitled, p‐n junctions from sputtered Ge25Se75−xBix films

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Mechanism for nearly ohmic behavior in annealed Au/n‐GaAs Schottky diodes

R. P. Leon; N. Newman; Z. Liliental‐Weber; E. R. Weber; J. Washburn; W. E. Spicer

J. Appl. Phys. 66, 711–715 (1989) https://doi.org/10.1063/1.343543

Abstract

View articletitled, Mechanism for nearly ohmic behavior in annealed Au/n‐GaAs Schottky diodes

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Accurate measurement of trivalent silicon interface trap density using small signal steady‐state methods

Jimmie A. Miller; Catherine Blat; Edward H. Nicollian

J. Appl. Phys. 66, 716–721 (1989) https://doi.org/10.1063/1.343544

Abstract

View articletitled, Accurate measurement of trivalent silicon interface trap density using small signal steady‐state methods

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Studies of majority‐carrier traps in Zn‐doped p‐InP by thermally stimulated capacitance techniques

A. Singh; W. A. Anderson

J. Appl. Phys. 66, 722–727 (1989) https://doi.org/10.1063/1.343545

Abstract

View articletitled, Studies of majority‐carrier traps in Zn‐doped p‐InP by thermally stimulated capacitance techniques

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Effects of compositional variations on the properties of superconducting (Bi,Pb)₂Sr₂Ca₂Cu₃O_δ

S. M. Green; Yu Mei; A. E. Manzi; H. L. Luo; R. Ramesh; G. Thomas

J. Appl. Phys. 66, 728–734 (1989) https://doi.org/10.1063/1.343546

Abstract

View articletitled, Effects of compositional variations on the properties of superconducting (Bi,Pb)2Sr2Ca2Cu3Oδ

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Theoretical investigations of microwave‐driven Josephson junctions in a large frequency range

B. Mikolajczak; H.‐G. Meyer; P. Seidel

J. Appl. Phys. 66, 735–740 (1989) https://doi.org/10.1063/1.343547

Abstract

View articletitled, Theoretical investigations of microwave‐driven Josephson junctions in a large frequency range

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Effects of gold on YBa₂Cu₃O_7−x at elevated temperatures

Roger D. Ray II; Eric E. Hellstrom

J. Appl. Phys. 66, 741–744 (1989) https://doi.org/10.1063/1.343548

Abstract

View articletitled, Effects of gold on YBa2Cu3O7−x at elevated temperatures

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Observation of a propagating normal/superconducting interface via I‐V analysis in YBa₂Cu₃O_x

C. M. Rey; R. J. Kennedy; M. Boninsegni; W. G. Moulton; L. R. Testardi

J. Appl. Phys. 66, 745–747 (1989) https://doi.org/10.1063/1.343549

Abstract

View articletitled, Observation of a propagating normal/superconducting interface via I‐V analysis in YBa2Cu3Ox

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Structural and soft‐magnetic properties of Fe/CoNbZr and Fe/FeCrB multilayers

F. W. A. Dirne; J. A. M. Tolboom; H. J. de Wit; C. H. M. Witmer

J. Appl. Phys. 66, 748–755 (1989) https://doi.org/10.1063/1.343550

Abstract

View articletitled, Structural and soft‐magnetic properties of Fe/CoNbZr and Fe/FeCrB multilayers

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Magnetic and magneto‐optical properties of rare‐earth transition‐metal alloys containing Gd, Tb, Fe, Co

P. Hansen; C. Clausen; G. Much; M. Rosenkranz; K. Witter

J. Appl. Phys. 66, 756–767 (1989) https://doi.org/10.1063/1.343551

Abstract

View articletitled, Magnetic and magneto‐optical properties of rare‐earth transition‐metal alloys containing Gd, Tb, Fe, Co

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Formation, crystallization, and magnetic properties of Nd‐Fe‐B glasses

L. X. Liao; Z. Altounian

J. Appl. Phys. 66, 768–771 (1989) https://doi.org/10.1063/1.343552

Abstract

View articletitled, Formation, crystallization, and magnetic properties of Nd‐Fe‐B glasses

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The effect of composition and magnetic heat treatment on the magnetostriction of Tb_xDy₁₋_xFe_y twinned single crystals

J. D. Verhoeven; J. E. Ostenson; E. D. Gibson; O. D. McMasters

J. Appl. Phys. 66, 772–779 (1989) https://doi.org/10.1063/1.343496

Abstract

View articletitled, The effect of composition and magnetic heat treatment on the magnetostriction of TbxDy1−xFey twinned single crystals

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P‐rich Si particles in separation by implanted oxygen structures revealed by low‐temperature electron‐spin resonance

G. Van Gorp; A. Stesmans

J. Appl. Phys. 66, 780–786 (1989) https://doi.org/10.1063/1.343497

Abstract

View articletitled, P‐rich Si particles in separation by implanted oxygen structures revealed by low‐temperature electron‐spin resonance

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Raman scattering in a Ga_1−xIn_xP strained heterostructure

R. M. Abdelouhab; R. Braunstein; K. Bärner; M. A. Rao; H. Kroemer

J. Appl. Phys. 66, 787–792 (1989) https://doi.org/10.1063/1.343498

Abstract

View articletitled, Raman scattering in a Ga1−xInxP strained heterostructure

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Time domain reflection methods for dielectric measurements to 10 GHz

R. H. Cole; J. G. Berberian; S. Mashimo; G. Chryssikos; A. Burns; E. Tombari

J. Appl. Phys. 66, 793–802 (1989) https://doi.org/10.1063/1.343499

Abstract

View articletitled, Time domain reflection methods for dielectric measurements to 10 GHz

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Piezoelectricity in electrically oriented films of poly‐α‐isobutyl‐L‐aspartate

A. Prieto; R. Perez; J. A. Subirana

J. Appl. Phys. 66, 803–806 (1989) https://doi.org/10.1063/1.343500

Abstract

View articletitled, Piezoelectricity in electrically oriented films of poly‐α‐isobutyl‐L‐aspartate

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Sorbed water and intrinsic stress in composite TiO₂‐SiO₂ films

H. Sankur; W. Gunning

J. Appl. Phys. 66, 807–812 (1989) https://doi.org/10.1063/1.343501

Abstract

View articletitled, Sorbed water and intrinsic stress in composite TiO2‐SiO2 films

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Optical properties of α‐Sn

Sadao Adachi

J. Appl. Phys. 66, 813–819 (1989) https://doi.org/10.1063/1.343502

Abstract

View articletitled, Optical properties of α‐Sn

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Kinetic and steady‐state effects of illumination on defects in hydrogenated amorphous silicon

Richard H. Bube; David Redfield

J. Appl. Phys. 66, 820–828 (1989) https://doi.org/10.1063/1.343503

Abstract

View articletitled, Kinetic and steady‐state effects of illumination on defects in hydrogenated amorphous silicon

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Optical properties of Hg_1−xCd_xTe sawtooth superlattices

Yia‐Chung Chang; J. Cheung; A. Chiou; M. Khoshnevisan

J. Appl. Phys. 66, 829–834 (1989) https://doi.org/10.1063/1.343504

Abstract

View articletitled, Optical properties of Hg1−xCdxTe sawtooth superlattices

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Far‐infrared absorption spectra of Cd_1−xMn_xTe from 10 to 300 K

B. P. Clayman; T. A. Orlowski; P. Becla

J. Appl. Phys. 66, 835–837 (1989) https://doi.org/10.1063/1.343505

Abstract

View articletitled, Far‐infrared absorption spectra of Cd1−xMnxTe from 10 to 300 K

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Space‐ and time‐resolved photoluminescence of In‐alloyed GaAs using photoluminescence excitation correlation spectroscopy

M. B. Johnson; T. C. McGill; A. T. Hunter

J. Appl. Phys. 66, 838–844 (1989) https://doi.org/10.1063/1.343506

Abstract

View articletitled, Space‐ and time‐resolved photoluminescence of In‐alloyed GaAs using photoluminescence excitation correlation spectroscopy

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Estimation of the composition parameter of electrochemically colored amorphous hydrogen tungsten oxide films

Hiroko Kaneko; Kiyoshi Miyake

J. Appl. Phys. 66, 845–850 (1989) https://doi.org/10.1063/1.343507

Abstract

View articletitled, Estimation of the composition parameter of electrochemically colored amorphous hydrogen tungsten oxide films

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InAs monomolecular plane in GaAs grown by flow‐rate modulation epitaxy

Michio Sato; Yoshiji Horikoshi

J. Appl. Phys. 66, 851–855 (1989) https://doi.org/10.1063/1.343508

Abstract

View articletitled, InAs monomolecular plane in GaAs grown by flow‐rate modulation epitaxy

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Study of Ga ion implantation damage and annealing effect in Sn‐doped InP using Raman scattering

Soon Jae Yu; Hajime Asahi; Shuichi Emura; Hitoshi Sumida; Shun‐ichi Gonda; Hisao Tanoue

J. Appl. Phys. 66, 856–860 (1989) https://doi.org/10.1063/1.343509

Abstract

View articletitled, Study of Ga ion implantation damage and annealing effect in Sn‐doped InP using Raman scattering

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Epitaxial NiSi layers on 〈111〉‐oriented Si obtained by pulsed laser irradiation

P. Baeri; M. G. Grimaldi; F. Priolo; A. G. Cullis; N. G. Chew

J. Appl. Phys. 66, 861–866 (1989) https://doi.org/10.1063/1.343510

Abstract

View articletitled, Epitaxial NiSi layers on 〈111〉‐oriented Si obtained by pulsed laser irradiation

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Low‐pressure metalorganic chemical vapor deposition growth and characterization of δ‐doped InP

M. A. di Forte‐Poisson; C. Brylinski; E. Blondeau; D. Lavielle; J. C. Portal

J. Appl. Phys. 66, 867–869 (1989) https://doi.org/10.1063/1.343511

Abstract

View articletitled, Low‐pressure metalorganic chemical vapor deposition growth and characterization of δ‐doped InP

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The role of gas adsorption in ion‐beam‐induced deposition of gold

A. D. Dubner; A. Wagner

J. Appl. Phys. 66, 870–874 (1989) https://doi.org/10.1063/1.343512

Abstract

View articletitled, The role of gas adsorption in ion‐beam‐induced deposition of gold

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Mössbauer study of the thermally induced transformation of the Fe_0.91B_0.09 rapidly quenched crystalline alloy

M. B. Fernández van Raap; F. H. Sánchez

J. Appl. Phys. 66, 875–880 (1989) https://doi.org/10.1063/1.343513

Abstract

View articletitled, Mössbauer study of the thermally induced transformation of the Fe0.91B0.09 rapidly quenched crystalline alloy

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Flexible carbonaceous and graphitized films by pyrolytic chemical‐vapor‐deposition method from hydrocarbons containing oxygen atoms

M. Fukuda; S. Mizogami; R. Matsuoka; K. Nogami; K. Yoshino

J. Appl. Phys. 66, 881–884 (1989) https://doi.org/10.1063/1.343514

Abstract

View articletitled, Flexible carbonaceous and graphitized films by pyrolytic chemical‐vapor‐deposition method from hydrocarbons containing oxygen atoms

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Metalorganic chemical vapor deposition of (ZnO)_x(SiO₂)_1−x films

David J. Lawrence; S.Tong Lee; Thomas N. Blanton

J. Appl. Phys. 66, 885–890 (1989) https://doi.org/10.1063/1.343515

Abstract

View articletitled, Metalorganic chemical vapor deposition of (ZnO)x(SiO2)1−x films

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Hydrogen passivation of impurities in GaP as studied by photoluminescence spectroscopy

M. Mizuta; Y. Mochizuki; N. Takadoh; K. Asakawa

J. Appl. Phys. 66, 891–895 (1989) https://doi.org/10.1063/1.343516

Abstract

View articletitled, Hydrogen passivation of impurities in GaP as studied by photoluminescence spectroscopy

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Epitaxial growth of ZnTe on GaSb(100) by rf sputtering

Yoji Tokumitsu; Akira Kawabuchi; Haruyuki Kitayama; Takeshi Imura; Yukio Osaka; Fumitaka Nishiyama

J. Appl. Phys. 66, 896–899 (1989) https://doi.org/10.1063/1.343517

Abstract

View articletitled, Epitaxial growth of ZnTe on GaSb(100) by rf sputtering

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Effects of capping layer material and recrystallization conditions on the characteristics of silicon‐on‐insulator metal‐oxide‐semiconductor transistors in laser‐recrystallized silicon films

D. J. Wouters; H. E. Maes

J. Appl. Phys. 66, 900–909 (1989) https://doi.org/10.1063/1.343518

Abstract

View articletitled, Effects of capping layer material and recrystallization conditions on the characteristics of silicon‐on‐insulator metal‐oxide‐semiconductor transistors in laser‐recrystallized silicon films

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Ultraviolet‐laser photolysis of disilane

Y. Muranaka; T. Motooka; D. Lubben; J. E. Greene

J. Appl. Phys. 66, 910–914 (1989) https://doi.org/10.1063/1.343519

Abstract

View articletitled, Ultraviolet‐laser photolysis of disilane

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Numerical analysis for high‐efficiency GaAs solar cells fabricated on Si substrates

Masafumi Yamaguchi; Chikara Amano; Yoshio Itoh

J. Appl. Phys. 66, 915–919 (1989) https://doi.org/10.1063/1.343520

Abstract

View articletitled, Numerical analysis for high‐efficiency GaAs solar cells fabricated on Si substrates

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Surface copper contamination of as‐received float‐zone silicon wafers

L. T. Canham; M. R. Dyball; K. G. Barraclough

J. Appl. Phys. 66, 920–927 (1989) https://doi.org/10.1063/1.343521

Abstract

View articletitled, Surface copper contamination of as‐received float‐zone silicon wafers

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The characterization of high electron mobility transistors using Shubnikov–de Haas oscillations and geometrical magnetoresistance measurements

Chian‐Sern Chang; Harold R. Fetterman; Chand R. Viswanathan

J. Appl. Phys. 66, 928–936 (1989) https://doi.org/10.1063/1.343522

Abstract

View articletitled, The characterization of high electron mobility transistors using Shubnikov–de Haas oscillations and geometrical magnetoresistance measurements

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A physical model for random telegraph signal currents in semiconductor devices

K. Kandiah; M. O. Deighton; F. B. Whiting

J. Appl. Phys. 66, 937–948 (1989) https://doi.org/10.1063/1.343523

Abstract

View articletitled, A physical model for random telegraph signal currents in semiconductor devices

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Experimental analysis of phase‐mode Josephson digital circuits

K. Nakajima; H. Sugahara; A. Fujimaki; Y. Sawada

J. Appl. Phys. 66, 949–955 (1989) https://doi.org/10.1063/1.343524

Abstract

View articletitled, Experimental analysis of phase‐mode Josephson digital circuits

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Spectrally agile far‐infrared detector using an n‐i‐p‐i superlattice

P. P. Ruden; C. A. Marttila; T. Werner; J. E. Carroll

J. Appl. Phys. 66, 956–960 (1989) https://doi.org/10.1063/1.343471

Abstract

View articletitled, Spectrally agile far‐infrared detector using an n‐i‐p‐i superlattice

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Integrated quantum‐well manifold laser

R. G. Waters; M. A. Emanuel; R. J. Dalby

J. Appl. Phys. 66, 961–963 (1989) https://doi.org/10.1063/1.343472

Abstract

View articletitled, Integrated quantum‐well manifold laser

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High‐speed measurement of the response time of a GaAs/Al_xGa_1−xAs multiquantum‐well long‐wavelength infrared detector

C. G. Bethea; B. F. Levine; G. Hasnain; J. Walker; R. J. Malik

J. Appl. Phys. 66, 963–965 (1989) https://doi.org/10.1063/1.343473

Abstract

View articletitled, High‐speed measurement of the response time of a GaAs/AlxGa1−xAs multiquantum‐well long‐wavelength infrared detector

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Microfabrication of WO₃‐based microelectrochemical devices

Martin O. Schloh; Nicholas Leventis; Mark S. Wrighton

J. Appl. Phys. 66, 965–968 (1989) https://doi.org/10.1063/1.343474

Abstract

View articletitled, Microfabrication of WO3‐based microelectrochemical devices

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Passivation of interface defects in lattice‐mismatched InGaAs/GaAs heterostructures with hydrogen

M. Gal; A. Tavendale; M. J. Johnson; B. F. Usher

J. Appl. Phys. 66, 968–970 (1989) https://doi.org/10.1063/1.343475

Abstract

View articletitled, Passivation of interface defects in lattice‐mismatched InGaAs/GaAs heterostructures with hydrogen

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Dopant redistribution in heavily doped silicon: Confirmation of the validity of the vacancy‐percolation model

D. Mathiot; J. C. Pfister

J. Appl. Phys. 66, 970–972 (1989) https://doi.org/10.1063/1.343476

Abstract

View articletitled, Dopant redistribution in heavily doped silicon: Confirmation of the validity of the vacancy‐percolation model

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Damage of silicon in low‐energy Ar discharge studied by photoinduced modulation absorption

F. Y. Chen

J. Appl. Phys. 66, 973–974 (1989) https://doi.org/10.1063/1.343477

Abstract

View articletitled, Damage of silicon in low‐energy Ar discharge studied by photoinduced modulation absorption

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Relaxation of strain within multilayer InGaAs/GaAs pseudomorphic structures

R. Grey; J. P. R. David; P. A. Claxton; F. Gonzalez Sanz; J. Woodhead

J. Appl. Phys. 66, 975–977 (1989) https://doi.org/10.1063/1.343478

Abstract

View articletitled, Relaxation of strain within multilayer InGaAs/GaAs pseudomorphic structures

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Resonance effects in Raman scattering in YBa₂Cu₃O₇

D. Kirillov; I. Bozovic; K. Char; A. Kapitulnik

J. Appl. Phys. 66, 977–979 (1989) https://doi.org/10.1063/1.344451

Abstract

View articletitled, Resonance effects in Raman scattering in YBa2Cu3O7

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Low‐temperature specific heat of (SN)_x

L. F. Lou

J. Appl. Phys. 66, 979–981 (1989) https://doi.org/10.1063/1.343479

Abstract

View articletitled, Low‐temperature specific heat of (SN)x

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MeV implantation masking using an aluminum gallium arsenide metal liftoff layer

M. M. Ghadiri; R. P. Bryan; L. M. Miller; T. Tang; M. E. Givens; T. A. DeTemple; J. J. Coleman

J. Appl. Phys. 66, 982–983 (1989) https://doi.org/10.1063/1.343480

Abstract

View articletitled, MeV implantation masking using an aluminum gallium arsenide metal liftoff layer

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Simple and approximate expressions of demagnetizing factors of uniformly magnetized rectangular rod and cylinder

M. Sato; Y. Ishii

J. Appl. Phys. 66, 983–985 (1989) https://doi.org/10.1063/1.343481

Abstract

View articletitled, Simple and approximate expressions of demagnetizing factors of uniformly magnetized rectangular rod and cylinder

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Rocking curve peak shift in thin semiconductor layers

C. R. Wie

J. Appl. Phys. 66, 985–988 (1989) https://doi.org/10.1063/1.343482

Abstract

View articletitled, Rocking curve peak shift in thin semiconductor layers

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The influence of many‐body effects on the gain and linewidth of semiconductor lasers

Witold Bardyszewski; David Yevick

J. Appl. Phys. 66, 988–991 (1989) https://doi.org/10.1063/1.344455

Abstract

View articletitled, The influence of many‐body effects on the gain and linewidth of semiconductor lasers

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The use of cathodoluminescence imaging of cleaved wafers to investigate the propagation of defects within epitaxial layers grown on GaAs liquid‐encapsulated Czochralski substrates

Julian P. Noad

J. Appl. Phys. 66, 991–994 (1989) https://doi.org/10.1063/1.343483

Abstract

View articletitled, The use of cathodoluminescence imaging of cleaved wafers to investigate the propagation of defects within epitaxial layers grown on GaAs liquid‐encapsulated Czochralski substrates

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Quantum‐confined piezoelectric effect

Jacob Khurgin

J. Appl. Phys. 66, 994–996 (1989) https://doi.org/10.1063/1.343484

Abstract

View articletitled, Quantum‐confined piezoelectric effect

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Charge trapping in a layered organic photoconductor studied by photoacoustic and xerographic discharge measurements

Yoshihiko Kanemitsu; Shunji Imamura

J. Appl. Phys. 66, 997–999 (1989) https://doi.org/10.1063/1.343485

Abstract

View articletitled, Charge trapping in a layered organic photoconductor studied by photoacoustic and xerographic discharge measurements

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Uniformity of 3‐in., semi‐insulating, vertical‐gradient‐freeze GaAs wafers

D. C. Look; D. C. Walters; M. G. Mier; J. S. Sewell; J. S. Sizelove; A. Akselrad; J. E. Clemans

J. Appl. Phys. 66, 1000–1002 (1989) https://doi.org/10.1063/1.344458

Abstract

View articletitled, Uniformity of 3‐in., semi‐insulating, vertical‐gradient‐freeze GaAs wafers

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Erratum: ‘‘Surface heat transfer coefficient, heat efficiency, and temperature of pulsed solid‐state lasers’’ [J. Appl. Phys. 64, 1015 (1988)]

K. Mann; H. Weber

J. Appl. Phys. 66, 1003 (1989) https://doi.org/10.1063/1.344506

View articletitled, Erratum: ‘‘Surface heat transfer coefficient, heat efficiency, and temperature of pulsed solid‐state lasers’’ [J. Appl. Phys. 64, 1015 (1988)]

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