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Measurements of swarm parameters and derived electron collision cross sections in methane

D. K. Davies; L. E. Kline; W. E. Bies

J. Appl. Phys. 65, 3311–3323 (1989) https://doi.org/10.1063/1.342642

Abstract

View articletitled, Measurements of swarm parameters and derived electron collision cross sections in methane

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Radial focusing in a linear induction accelerator gap

Yinbao Chen; M. Reiser

J. Appl. Phys. 65, 3324–3328 (1989) https://doi.org/10.1063/1.342643

Abstract

View articletitled, Radial focusing in a linear induction accelerator gap

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The equilibrium charge distribution and electric field at a vacuum/dielectric interface

C. L. Enloe

J. Appl. Phys. 65, 3329–3334 (1989) https://doi.org/10.1063/1.342644

Abstract

View articletitled, The equilibrium charge distribution and electric field at a vacuum/dielectric interface

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Transient analysis of a step wave propagating in a lossy dielectric

Charles D. Hechtman; Ching‐Wen Hsue

J. Appl. Phys. 65, 3335–3339 (1989) https://doi.org/10.1063/1.342645

Abstract

View articletitled, Transient analysis of a step wave propagating in a lossy dielectric

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High‐power conversion efficiency in a strained InGaAs/AlGaAs quantum well laser

D. P. Bour; G. A. Evans; D. B. Gilbert

J. Appl. Phys. 65, 3340–3343 (1989) https://doi.org/10.1063/1.342646

Abstract

View articletitled, High‐power conversion efficiency in a strained InGaAs/AlGaAs quantum well laser

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The frequency response of an attenuated total reflection modulator

Ding‐Liang Chiao; Cheng‐Min Lee

J. Appl. Phys. 65, 3344–3346 (1989) https://doi.org/10.1063/1.342647

Abstract

View articletitled, The frequency response of an attenuated total reflection modulator

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Spatial‐frequency selection using downconversion optical parametric amplification

Paul A. Laferriere; Charles J. Wetterer; Lee P. Schelonka; Mark A. Kramer

J. Appl. Phys. 65, 3347–3350 (1989) https://doi.org/10.1063/1.342648

Abstract

View articletitled, Spatial‐frequency selection using downconversion optical parametric amplification

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Impulsive generation of hypersonic waves: An application to the measurement of acoustic properties of poly‐methyl‐methacrylate

D. Blanchard; R. Casalegno; M. Pierre; H. P. Trommsdorff

J. Appl. Phys. 65, 3351–3355 (1989) https://doi.org/10.1063/1.342649

Abstract

View articletitled, Impulsive generation of hypersonic waves: An application to the measurement of acoustic properties of poly‐methyl‐methacrylate

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Influence of Hall current on the stability properties of a self‐pinched intense electron beam

Eun H. Choi; Han S. Uhm; Duk I. Choi; Hee M. Shin

J. Appl. Phys. 65, 3356–3368 (1989) https://doi.org/10.1063/1.342650

Abstract

View articletitled, Influence of Hall current on the stability properties of a self‐pinched intense electron beam

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Ionization and current growth in N₂ at very high electric field to gas density ratios

V. T. Gylys; B. M. Jelenković; A. V. Phelps

J. Appl. Phys. 65, 3369–3380 (1989) https://doi.org/10.1063/1.342651

Abstract

View articletitled, Ionization and current growth in N2 at very high electric field to gas density ratios

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Bistability and hysteresis in a laser beatwave excited relativistic Langmuir wave

Jin‐xiu Ma; Zhi‐zhan Xu

J. Appl. Phys. 65, 3381–3384 (1989) https://doi.org/10.1063/1.342652

Abstract

View articletitled, Bistability and hysteresis in a laser beatwave excited relativistic Langmuir wave

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Soft x‐ray spectra from a gas‐puff z pinch

G. Nave; C. D. Challis; A. E. Dangor; J. G. Lunney

J. Appl. Phys. 65, 3385–3390 (1989) https://doi.org/10.1063/1.342653

Abstract

View articletitled, Soft x‐ray spectra from a gas‐puff z pinch

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Transmission electron microscopy of strained In_yGa₁₋_yAs/GaAs multiquantum wells: The generation of misfit dislocations

K. H. Chang; P. K. Bhattacharya; R. Gibala

J. Appl. Phys. 65, 3391–3394 (1989) https://doi.org/10.1063/1.342654

Abstract

View articletitled, Transmission electron microscopy of strained InyGa1−yAs/GaAs multiquantum wells: The generation of misfit dislocations

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Ion mixing of near‐noble monosilicides with Si substrates

Q. Z. Hong; L. S. Hung; J. W. Mayer

J. Appl. Phys. 65, 3395–3399 (1989) https://doi.org/10.1063/1.342655

Abstract

View articletitled, Ion mixing of near‐noble monosilicides with Si substrates

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On the growth of segregated C layers on top of Fe films on pyrolytic graphite samples during high‐fluence D⁺ irradiation at elevated temperature

A. Santaniello; W. Möller; J. Roth

J. Appl. Phys. 65, 3400–3406 (1989) https://doi.org/10.1063/1.342656

Abstract

View articletitled, On the growth of segregated C layers on top of Fe films on pyrolytic graphite samples during high‐fluence D+ irradiation at elevated temperature

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Dispersion of elastic waves in supported CaF₂ films

J. M. Karanikas; R. Sooryakumar; Julia M. Phillips

J. Appl. Phys. 65, 3407–3410 (1989) https://doi.org/10.1063/1.342657

Abstract

View articletitled, Dispersion of elastic waves in supported CaF2 films

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Elastic constants of a graphite‐magnesium composite

H. M. Ledbetter; S. K. Datta; T. Kyono

J. Appl. Phys. 65, 3411–3416 (1989) https://doi.org/10.1063/1.342658

Abstract

View articletitled, Elastic constants of a graphite‐magnesium composite

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Material properties determining the resistance of ceramics to high velocity penetration

Joseph Sternberg

J. Appl. Phys. 65, 3417–3424 (1989) https://doi.org/10.1063/1.342659

Abstract

View articletitled, Material properties determining the resistance of ceramics to high velocity penetration

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Thermochemical heat of ablation of solid carbon

Claude A. Klein; Michael J. Berry; Perry A. Miles

J. Appl. Phys. 65, 3425–3429 (1989) https://doi.org/10.1063/1.342660

Abstract

View articletitled, Thermochemical heat of ablation of solid carbon

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The effect of Ar⁺ sputtering on the x‐ray photoelectron spectra of plasma‐deposited silicon nitride films

J. N. Chiang; D. W. Hess

J. Appl. Phys. 65, 3430–3434 (1989) https://doi.org/10.1063/1.342661

Abstract

View articletitled, The effect of Ar+ sputtering on the x‐ray photoelectron spectra of plasma‐deposited silicon nitride films

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Effects of Al and Ti interlayers on Sb/(HgCd)Te interface behavior

G. D. Davis; J. T. McKinley; D. G. Kilday; G. Margaritondo

J. Appl. Phys. 65, 3435–3440 (1989) https://doi.org/10.1063/1.342662

Abstract

View articletitled, Effects of Al and Ti interlayers on Sb/(HgCd)Te interface behavior

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Nozzleless droplet formation with focused acoustic beams

S. A. Elrod; B. Hadimioglu; B. T. Khuri‐Yakub; E. G. Rawson; E. Richley; C. F. Quate; N. N. Mansour; T. S. Lundgren

J. Appl. Phys. 65, 3441–3447 (1989) https://doi.org/10.1063/1.342663

Abstract

View articletitled, Nozzleless droplet formation with focused acoustic beams

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On the role of oxygen and hydrogen in diamond‐forming discharges

J. A. Mucha; D. L. Flamm; D. E. Ibbotson

J. Appl. Phys. 65, 3448–3452 (1989) https://doi.org/10.1063/1.342635

Abstract

View articletitled, On the role of oxygen and hydrogen in diamond‐forming discharges

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X‐ray reflectivity and transmission electron microscopy studies on thin and ultrathin W/C and W/Si multilayers structures

B. A. Vidal; J. C. Marfaing

J. Appl. Phys. 65, 3453–3458 (1989) https://doi.org/10.1063/1.342613

Abstract

View articletitled, X‐ray reflectivity and transmission electron microscopy studies on thin and ultrathin W/C and W/Si multilayers structures

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Electronic and optical properties of Ti‐doped GaAs and InP; semi‐insulating InP

C. D. Brandt; A. M. Hennel; T. Bryskiewicz; K. Y. Ko; L. M. Pawlosicz; H. C. Gatos

J. Appl. Phys. 65, 3459–3469 (1989) https://doi.org/10.1063/1.342614

Abstract

View articletitled, Electronic and optical properties of Ti‐doped GaAs and InP; semi‐insulating InP

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Dopant‐dependent formation and annealing of the dominant native deep‐level defect in liquid‐phase epitaxial AlGaAs

P. Krispin

J. Appl. Phys. 65, 3470–3476 (1989) https://doi.org/10.1063/1.342615

Abstract

View articletitled, Dopant‐dependent formation and annealing of the dominant native deep‐level defect in liquid‐phase epitaxial AlGaAs

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1/f noise in ring geometries

R. H. M. Clevers

J. Appl. Phys. 65, 3477–3479 (1989) https://doi.org/10.1063/1.342616

Abstract

View articletitled, 1/f noise in ring geometries

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On the thermoelectric power of the electrons in degenerate n‐A^II₃B^V₂ compounds in the presence of a classically large magnetic field

K. P. Ghatak; M. Mondal

J. Appl. Phys. 65, 3480–3483 (1989) https://doi.org/10.1063/1.342617

Abstract

View articletitled, On the thermoelectric power of the electrons in degenerate n‐AII3BV2 compounds in the presence of a classically large magnetic field

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The kinetics of contact noise of Naβ″ alumina

Chu Kun Kuo; James J. Brophy

J. Appl. Phys. 65, 3484–3486 (1989) https://doi.org/10.1063/1.342618

Abstract

View articletitled, The kinetics of contact noise of Naβ″ alumina

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Selection criteria for AlGaAs‐GaAs heterostructures in view of their use as a quantum Hall resistance standard

W. van der Wel; E. G. Haanappel; J. E. Mooij; C. J. P. M. Harmans; J. P. André; G. Weimann; K. Ploog; C. T. Foxon; J. J. Harris

J. Appl. Phys. 65, 3487–3497 (1989) https://doi.org/10.1063/1.342619

Abstract

View articletitled, Selection criteria for AlGaAs‐GaAs heterostructures in view of their use as a quantum Hall resistance standard

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Effects of irradiation‐induced lattice defects on the quantum Hall effect in GaAs‐Al_xGa₁₋_xAs heterostructures

H. Adrian; W. Möhle; L. Bliek; G. Weimann; W. Schlapp

J. Appl. Phys. 65, 3498–3500 (1989) https://doi.org/10.1063/1.342620

Abstract

View articletitled, Effects of irradiation‐induced lattice defects on the quantum Hall effect in GaAs‐AlxGa1−xAs heterostructures

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Study of the direct‐indirect band‐gap transition in GaAs/AlAs short‐period superlattices using photocurrent spectroscopy

J. Barrau; K. Khirouni; Th. Amand; J. C. Brabant; B. Brousseau; M. Brousseau; Phi Hoa Binh; F. Mollot; R. Planel

J. Appl. Phys. 65, 3501–3504 (1989) https://doi.org/10.1063/1.342621

Abstract

View articletitled, Study of the direct‐indirect band‐gap transition in GaAs/AlAs short‐period superlattices using photocurrent spectroscopy

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Anomalous electron‐beam‐induced‐current collection in denuded‐zone‐treated low‐doped silicon

D. E. Burk; B.‐C. Chung

J. Appl. Phys. 65, 3505–3509 (1989) https://doi.org/10.1063/1.342622

Abstract

View articletitled, Anomalous electron‐beam‐induced‐current collection in denuded‐zone‐treated low‐doped silicon

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Scattering effects on resonant tunneling in double‐barrier heterostructures

B. Gu; C. Coluzza; M. Mangiantini; A. Frova

J. Appl. Phys. 65, 3510–3514 (1989) https://doi.org/10.1063/1.342623

Abstract

View articletitled, Scattering effects on resonant tunneling in double‐barrier heterostructures

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Pressure effects in GaAs/AlGaAs heterostructures

David Y. K. Ko; J. C. Inkson

J. Appl. Phys. 65, 3515–3518 (1989) https://doi.org/10.1063/1.342624

Abstract

View articletitled, Pressure effects in GaAs/AlGaAs heterostructures

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Stability of a ferroelectric copolymer‐induced inversion layer in silicon

B. Noirhomme; A. Y. Filion; L. G. Caron; A. Rambo; J. Lebel

J. Appl. Phys. 65, 3519–3525 (1989) https://doi.org/10.1063/1.342625

Abstract

View articletitled, Stability of a ferroelectric copolymer‐induced inversion layer in silicon

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Pt and PtSi_x Schottky contacts on n‐type β‐SiC

N. A. Papanicolaou; A. Christou; M. L. Gipe

J. Appl. Phys. 65, 3526–3530 (1989) https://doi.org/10.1063/1.342626

Abstract

View articletitled, Pt and PtSix Schottky contacts on n‐type β‐SiC

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Characterization of Si/CoSi₂/Si(111) heterostructures using Auger plasmon losses

F. D. Schowengerdt; T. L. Lin; R. W. Fathauer; P. J. Grunthaner

J. Appl. Phys. 65, 3531–3538 (1989) https://doi.org/10.1063/1.342627

Abstract

View articletitled, Characterization of Si/CoSi2/Si(111) heterostructures using Auger plasmon losses

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Thermally stable ohmic contacts to n‐type GaAs. IV. Role of Ni on NiInW contacts

Yih‐Cheng Shih; Masanori Murakami; W. H. Price

J. Appl. Phys. 65, 3539–3545 (1989) https://doi.org/10.1063/1.342628

Abstract

View articletitled, Thermally stable ohmic contacts to n‐type GaAs. IV. Role of Ni on NiInW contacts

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Thermally stable ohmic contacts to n‐type GaAs. V. Metal‐semiconductor field‐effect transistors with NiInW ohmic contacts

Masanori Murakami; W. H. Price; J. H. Greiner; J. D. Feder; C. C. Parks

J. Appl. Phys. 65, 3546–3551 (1989) https://doi.org/10.1063/1.342629

Abstract

View articletitled, Thermally stable ohmic contacts to n‐type GaAs. V. Metal‐semiconductor field‐effect transistors with NiInW ohmic contacts

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Properties of metal‐semiconductor and metal‐insulator‐semiconductor junctions on CdTe single crystals

Frank F. Wang; Alan L. Fahrenbruch; Richard H. Bube

J. Appl. Phys. 65, 3552–3559 (1989) https://doi.org/10.1063/1.342630

Abstract

View articletitled, Properties of metal‐semiconductor and metal‐insulator‐semiconductor junctions on CdTe single crystals

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Interface capacitance in metal‐semiconductor junctions

Xu Wu; Edward S. Yang

J. Appl. Phys. 65, 3560–3567 (1989) https://doi.org/10.1063/1.342631

Abstract

View articletitled, Interface capacitance in metal‐semiconductor junctions

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The effect of sputter cleaning on Au/GaAs contacts and the role of doping

Liu Lu‐Min Yeh; Yu‐Jun Xie; Paul H. Holloway

J. Appl. Phys. 65, 3568–3573 (1989) https://doi.org/10.1063/1.342632

Abstract

View articletitled, The effect of sputter cleaning on Au/GaAs contacts and the role of doping

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Scaling of critical current density in field‐aligned grains of (Tl_0.75Bi_0.25)_1.33Sr_1.33Ca_1.33Cu₂ O_6.67+δ, the ‘‘1212’’ phase

K. Chen; B. Maheswaran; P. Haldar; R. S. Markiewicz; B. C. Giessen

J. Appl. Phys. 65, 3574–3578 (1989) https://doi.org/10.1063/1.342633

Abstract

View articletitled, Scaling of critical current density in field‐aligned grains of (Tl0.75Bi0.25)1.33Sr1.33Ca1.33Cu2 O6.67+δ, the ‘‘1212’’ phase

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Influence of the tank circuit noise on the dc impedance of the rf‐biased R‐SQUID

Heikki Seppä

J. Appl. Phys. 65, 3579–3582 (1989) https://doi.org/10.1063/1.342634

Abstract

View articletitled, Influence of the tank circuit noise on the dc impedance of the rf‐biased R‐SQUID

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The effect of mass and pole strength on the levitation height of a magnet over a superconductor

Richard Williams; J. R. Matey; Y. Arie; J. Rathee

J. Appl. Phys. 65, 3583–3585 (1989) https://doi.org/10.1063/1.342636

Abstract

View articletitled, The effect of mass and pole strength on the levitation height of a magnet over a superconductor

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Glow‐discharge optical spectroscopy as a diagnostic of sputtered permalloy film composition and saturation magnetostriction

Ralph H. Page; Christopher S. Gudeman; Vlad J. Novotny

J. Appl. Phys. 65, 3586–3596 (1989) https://doi.org/10.1063/1.342637

Abstract

View articletitled, Glow‐discharge optical spectroscopy as a diagnostic of sputtered permalloy film composition and saturation magnetostriction

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Model calculations of the angular dependence of the switching field of imperfect ferromagnetic particles with special reference to barium ferrite

H. J. Richter

J. Appl. Phys. 65, 3597–3601 (1989) https://doi.org/10.1063/1.342638

Abstract

View articletitled, Model calculations of the angular dependence of the switching field of imperfect ferromagnetic particles with special reference to barium ferrite

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Rotational viscosity in ferroelectric liquid crystals estimated from transient light scattering and dielectric properties

M. Ozaki; T. Hatai; K. Nakao; K. Yoshino

J. Appl. Phys. 65, 3602–3605 (1989) https://doi.org/10.1063/1.342639

Abstract

View articletitled, Rotational viscosity in ferroelectric liquid crystals estimated from transient light scattering and dielectric properties

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Photoluminescence decay time studies of type II GaAs/AlAs quantum‐well structures

P. Dawson; K. J. Moore; C. T. Foxon; G. W. ‘t Hooft; R. P. M. van Hal

J. Appl. Phys. 65, 3606–3609 (1989) https://doi.org/10.1063/1.342640

Abstract

View articletitled, Photoluminescence decay time studies of type II GaAs/AlAs quantum‐well structures

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Electroluminescence of doped organic thin films

C. W. Tang; S. A. VanSlyke; C. H. Chen

J. Appl. Phys. 65, 3610–3616 (1989) https://doi.org/10.1063/1.343409

Abstract

View articletitled, Electroluminescence of doped organic thin films

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Surface photovoltage spectroscopy in hydrogenated amorphous silicon

C. I. Ukah; J. M. Perz; S. Zukotynski

J. Appl. Phys. 65, 3617–3630 (1989) https://doi.org/10.1063/1.342610

Abstract

View articletitled, Surface photovoltage spectroscopy in hydrogenated amorphous silicon

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Formation of polycrystalline silicon grains in Si⁺‐preamorphized, BF⁺₂‐implanted (111)Si

C. H. Chu; L. J. Chen

J. Appl. Phys. 65, 3631–3635 (1989) https://doi.org/10.1063/1.342611

Abstract

View articletitled, Formation of polycrystalline silicon grains in Si+‐preamorphized, BF+2‐implanted (111)Si

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In situ measurement of ion‐beam‐induced deposition of gold

A. D. Dubner; A. Wagner

J. Appl. Phys. 65, 3636–3643 (1989) https://doi.org/10.1063/1.342612

Abstract

View articletitled, In situ measurement of ion‐beam‐induced deposition of gold

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The effect of rapid thermal annealing on the precipitation of oxygen in silicon

G. A. Hawkins; J. P. Lavine

J. Appl. Phys. 65, 3644–3654 (1989) https://doi.org/10.1063/1.342589

Abstract

View articletitled, The effect of rapid thermal annealing on the precipitation of oxygen in silicon

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Shallow melting of thin heavily doped silicon layers by pulsed CO₂ laser irradiation

R. B. James; W. H. Christie

J. Appl. Phys. 65, 3655–3661 (1989) https://doi.org/10.1063/1.342590

Abstract

View articletitled, Shallow melting of thin heavily doped silicon layers by pulsed CO2 laser irradiation

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Melting and solidification behavior of YBa₂Cu₃O_7−x

J. McKittrick; S. Sasayama; M. E. McHenry; G. Kalonji; R. C. O’Handley

J. Appl. Phys. 65, 3662–3666 (1989) https://doi.org/10.1063/1.342591

Abstract

View articletitled, Melting and solidification behavior of YBa2Cu3O7−x

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Determination of interfacial stress during thermal oxidation of silicon

Paul Murray; G. F. Carey

J. Appl. Phys. 65, 3667–3670 (1989) https://doi.org/10.1063/1.342592

Abstract

View articletitled, Determination of interfacial stress during thermal oxidation of silicon

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Monte Carlo calculation of the thermalization of atoms sputtered from the cathode of a sputtering discharge

G. M. Turner; I. S. Falconer; B. W. James; D. R. McKenzie

J. Appl. Phys. 65, 3671–3679 (1989) https://doi.org/10.1063/1.342593

Abstract

View articletitled, Monte Carlo calculation of the thermalization of atoms sputtered from the cathode of a sputtering discharge

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Developmental experiments on large‐area silicon solar cells

Andrei P. Silard; Gabriel Nani

J. Appl. Phys. 65, 3680–3686 (1989) https://doi.org/10.1063/1.342594

Abstract

View articletitled, Developmental experiments on large‐area silicon solar cells

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Thermomagnetic mechanical heat engines

Dan Solomon

J. Appl. Phys. 65, 3687–3693 (1989) https://doi.org/10.1063/1.342595

Abstract

View articletitled, Thermomagnetic mechanical heat engines

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Total dose effect on soft error rate for dynamic metal‐oxide‐semiconductor memory cells

Reuben Benumof

J. Appl. Phys. 65, 3694–3697 (1989) https://doi.org/10.1063/1.342596

Abstract

View articletitled, Total dose effect on soft error rate for dynamic metal‐oxide‐semiconductor memory cells

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Strong lumped circuit solitons

M. N. Rosenbluth; R. E. Waltz

J. Appl. Phys. 65, 3698–3705 (1989) https://doi.org/10.1063/1.342597

Abstract

View articletitled, Strong lumped circuit solitons

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Improved material properties of amorphous silicon from silane by fluorine implantation: Application to thin‐film transistors

Ruud E. I. Schropp

J. Appl. Phys. 65, 3706–3711 (1989) https://doi.org/10.1063/1.342598

Abstract

View articletitled, Improved material properties of amorphous silicon from silane by fluorine implantation: Application to thin‐film transistors

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Strength of Terfenol‐D

D. T. Peterson; J. D. Verhoeven; O. D. McMasters; W. A. Spitzig

J. Appl. Phys. 65, 3712–3713 (1989) https://doi.org/10.1063/1.342599

Abstract

View articletitled, Strength of Terfenol‐D

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Electron emission from glow‐discharge cathode materials due to neon and argon ion bombardment

B. Szapiro; J. J. Rocca

J. Appl. Phys. 65, 3713–3716 (1989) https://doi.org/10.1063/1.342600

Abstract

View articletitled, Electron emission from glow‐discharge cathode materials due to neon and argon ion bombardment

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High‐power, diffraction‐limited‐beam operation from interferometric, phase‐locked arrays of AlGaAs/GaAs diode lasers

D. Botez; L. J. Mawst; P. Hayashida; T. J. Roth

J. Appl. Phys. 65, 3716–3718 (1989) https://doi.org/10.1063/1.342601

Abstract

View articletitled, High‐power, diffraction‐limited‐beam operation from interferometric, phase‐locked arrays of AlGaAs/GaAs diode lasers

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Selective epitaxial growth in silicon on insulator: Planarity and mass flow

D. A. Williams; R. A. McMahon; H. Ahmed; G. Garry; L. Karapiperis; D. Dieumegard

J. Appl. Phys. 65, 3718–3721 (1989) https://doi.org/10.1063/1.342602

Abstract

View articletitled, Selective epitaxial growth in silicon on insulator: Planarity and mass flow

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The hole photoionization cross section of EL2 in GaAs_1−xP_x

P. Silverberg; P. Omling; L. Samuelson

J. Appl. Phys. 65, 3721–3723 (1989) https://doi.org/10.1063/1.342603

Abstract

View articletitled, The hole photoionization cross section of EL2 in GaAs1−xPx

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Doping of InP and GaInAs with S during metalorganic vapor‐phase epitaxy

R. A. Logan; T. Tanbun‐Ek; A. M. Sergent

J. Appl. Phys. 65, 3723–3725 (1989) https://doi.org/10.1063/1.342604

Abstract

View articletitled, Doping of InP and GaInAs with S during metalorganic vapor‐phase epitaxy

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Photoinduced current transient spectroscopy in silicon‐on‐insulator films formed by oxygen implantation

G. Papaioannou; V. Ioannou‐Sougleridis; S. Cristoloveanu; C. Jaussaud

J. Appl. Phys. 65, 3725–3727 (1989) https://doi.org/10.1063/1.342605

Abstract

View articletitled, Photoinduced current transient spectroscopy in silicon‐on‐insulator films formed by oxygen implantation

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Nuclear magnetic resonance imaging as a tool to characterize defect densities in solids

B. H. Suits; J. L. Lutz

J. Appl. Phys. 65, 3728–3730 (1989) https://doi.org/10.1063/1.342606

Abstract

View articletitled, Nuclear magnetic resonance imaging as a tool to characterize defect densities in solids

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Magnetic fields of direct currents in horizontally stratified conductors

A. A. Inayat‐Hussain

J. Appl. Phys. 65, 3731–3732 (1989) https://doi.org/10.1063/1.342607

Abstract

View articletitled, Magnetic fields of direct currents in horizontally stratified conductors

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Addendum: ‘‘A coordinate‐free approach to wave propagation in anisotropic media’’ [J. Appl. Phys. 53, 4606 (1982)]

Hollis C. Chen

J. Appl. Phys. 65, 3733 (1989) https://doi.org/10.1063/1.342608

View articletitled, Addendum: ‘‘A coordinate‐free approach to wave propagation in anisotropic media’’ [J. Appl. Phys. 53, 4606 (1982)]

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Erratum: ‘‘Magnetization reversal in nucleation controlled magnets. I. Theory’’ [J. Appl. Phys. 64, 6406 (1988)]

R. Ramesh; K. Srikrishna

J. Appl. Phys. 65, 3734 (1989) https://doi.org/10.1063/1.342609

View articletitled, Erratum: ‘‘Magnetization reversal in nucleation controlled magnets. I. Theory’’ [J. Appl. Phys. 64, 6406 (1988)]

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