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Finite‐element analysis of radio‐frequency quadrupole traps

M. David N. Lunney; J. P. Webb; R. B. Moore

J. Appl. Phys. 65, 2883–2888 (1989) https://doi.org/10.1063/1.342733

Abstract

View articletitled, Finite‐element analysis of radio‐frequency quadrupole traps

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Space‐charge‐limited current density as a function of electron flow duration in an emissive diode

Jean‐Pierre Girardeau‐Montaut; Claire Girardeau‐Montaut

J. Appl. Phys. 65, 2889–2895 (1989) https://doi.org/10.1063/1.342734

Abstract

View articletitled, Space‐charge‐limited current density as a function of electron flow duration in an emissive diode

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Near‐zone fields behind circular apertures in thick, perfectly conducting screens

A. Roberts

J. Appl. Phys. 65, 2896–2899 (1989) https://doi.org/10.1063/1.342735

Abstract

View articletitled, Near‐zone fields behind circular apertures in thick, perfectly conducting screens

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Internal fields of a spherical particle illuminated by a tightly focused laser beam: Focal point positioning effects at resonance

J. P. Barton; D. R. Alexander; S. A. Schaub

J. Appl. Phys. 65, 2900–2906 (1989) https://doi.org/10.1063/1.342736

Abstract

View articletitled, Internal fields of a spherical particle illuminated by a tightly focused laser beam: Focal point positioning effects at resonance

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High‐power operation of 830‐nm AlGaAs laser diodes

K. Shinozaki; A. Watanabe; R. Furukawa; N. Watanabe

J. Appl. Phys. 65, 2907–2911 (1989) https://doi.org/10.1063/1.342737

Abstract

View articletitled, High‐power operation of 830‐nm AlGaAs laser diodes

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Deep‐level trap model of diode laser modulation: Significance of spontaneous emission and gain saturation

E. Bourkoff; X. Y. Liu

J. Appl. Phys. 65, 2912–2917 (1989) https://doi.org/10.1063/1.343413

Abstract

View articletitled, Deep‐level trap model of diode laser modulation: Significance of spontaneous emission and gain saturation

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Measurement of ultrasound attenuation by laser ultrasonics

J.‐D. Aussel; J.‐P. Monchalin

J. Appl. Phys. 65, 2918–2922 (1989) https://doi.org/10.1063/1.342738

Abstract

View articletitled, Measurement of ultrasound attenuation by laser ultrasonics

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Three‐dimensional transient thermal analysis for laser chemical vapor deposition on uniformly moving finite slabs

A. Kar; J. Mazumder

J. Appl. Phys. 65, 2923–2934 (1989) https://doi.org/10.1063/1.342739

Abstract

View articletitled, Three‐dimensional transient thermal analysis for laser chemical vapor deposition on uniformly moving finite slabs

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Generalized criteria for microwave breakdown in air‐filled waveguides

D. Anderson; M. Lisak; T. Lewin

J. Appl. Phys. 65, 2935–2945 (1989) https://doi.org/10.1063/1.342740

Abstract

View articletitled, Generalized criteria for microwave breakdown in air‐filled waveguides

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Modeling of time‐dependent laser‐induced plasma spectra formed on a carbon surface

P. Shah; R. L. Armstrong; L. J. Radziemski

J. Appl. Phys. 65, 2946–2950 (1989) https://doi.org/10.1063/1.342741

Abstract

View articletitled, Modeling of time‐dependent laser‐induced plasma spectra formed on a carbon surface

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A photoemission investigation of surface processes affecting the reactive ion etching of TiSi₂ in CF₄

S. W. Robey; M. A. Jaso; G. S. Oehrlein

J. Appl. Phys. 65, 2951–2956 (1989) https://doi.org/10.1063/1.342742

Abstract

View articletitled, A photoemission investigation of surface processes affecting the reactive ion etching of TiSi2 in CF4

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Vacancy supersaturation in Si under SiO₂ caused by SiO formation during annealing in Ar

S. T. Ahn; H. W. Kennel; W. A. Tiller; J. D. Plummer

J. Appl. Phys. 65, 2957–2963 (1989) https://doi.org/10.1063/1.343412

Abstract

View articletitled, Vacancy supersaturation in Si under SiO2 caused by SiO formation during annealing in Ar

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Spall due to short high‐intensity impulses

K. E. Froeschner; D. E. Maiden; H. H. Chau

J. Appl. Phys. 65, 2964–2973 (1989) https://doi.org/10.1063/1.342713

Abstract

View articletitled, Spall due to short high‐intensity impulses

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Gettering in silicon

J. S. Kang; D. K. Schroder

J. Appl. Phys. 65, 2974–2985 (1989) https://doi.org/10.1063/1.342714

Abstract

View articletitled, Gettering in silicon

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Atomic and carrier profiles of 1‐, 2‐, 4‐, and 6‐MeV ³⁰Si implanted into GaAs

Phillip E. Thompson; Robert G. Wilson; David C. Ingram; Peter P. Pronko

J. Appl. Phys. 65, 2986–2990 (1989) https://doi.org/10.1063/1.342715

Abstract

View articletitled, Atomic and carrier profiles of 1‐, 2‐, 4‐, and 6‐MeV 30Si implanted into GaAs

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Generalized expressions for the calculation of elastic constants by computer simulation

J. F. Lutsko

J. Appl. Phys. 65, 2991–2997 (1989) https://doi.org/10.1063/1.342716

Abstract

View articletitled, Generalized expressions for the calculation of elastic constants by computer simulation

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Cold shock waves in semiconductors and insulators

A. N. Dharamsi; A. B. Hassam

J. Appl. Phys. 65, 2998–3005 (1989) https://doi.org/10.1063/1.342717

Abstract

View articletitled, Cold shock waves in semiconductors and insulators

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The instability of rapidly stretching plastic jets

L. A. Romero

J. Appl. Phys. 65, 3006–3016 (1989) https://doi.org/10.1063/1.342718

Abstract

View articletitled, The instability of rapidly stretching plastic jets

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Tantalum nitride as a diffusion barrier between Pd₂Si or CoSi₂ and aluminum

M. A. Farooq; S. P. Murarka; C. C. Chang; F. A. Baiocchi

J. Appl. Phys. 65, 3017–3022 (1989) https://doi.org/10.1063/1.342693

Abstract

View articletitled, Tantalum nitride as a diffusion barrier between Pd2Si or CoSi2 and aluminum

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A real time ellipsometry study of the growth of amorphous silicon on transparent conducting oxides

Satyendra Kumar; B. Drevillon

J. Appl. Phys. 65, 3023–3034 (1989) https://doi.org/10.1063/1.342694

Abstract

View articletitled, A real time ellipsometry study of the growth of amorphous silicon on transparent conducting oxides

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Molybdenum deposition from the decomposition of molybdenum hexacarbonyl

C. C. Cho; S. L. Bernasek

J. Appl. Phys. 65, 3035–3043 (1989) https://doi.org/10.1063/1.342695

Abstract

View articletitled, Molybdenum deposition from the decomposition of molybdenum hexacarbonyl

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Gas‐phase kinetics during diamond growth: CH₄ as‐growth species

Stephen J. Harris

J. Appl. Phys. 65, 3044–3048 (1989) https://doi.org/10.1063/1.342696

Abstract

View articletitled, Gas‐phase kinetics during diamond growth: CH4 as‐growth species

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An annealing study of relaxation and interface quality in Si‐Si_1−xGe_x strained‐layer superlattices

D. J. Lockwood; J.‐M. Baribeau; P. Y. Timbrell

J. Appl. Phys. 65, 3049–3055 (1989) https://doi.org/10.1063/1.342697

Abstract

View articletitled, An annealing study of relaxation and interface quality in Si‐Si1−xGex strained‐layer superlattices

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Island films resulting from ion bombardment: Spectroscopic ellipsometry and Auger electron spectroscopy

Michael J. Armstrong; Rolf H. Muller

J. Appl. Phys. 65, 3056–3060 (1989) https://doi.org/10.1063/1.342698

Abstract

View articletitled, Island films resulting from ion bombardment: Spectroscopic ellipsometry and Auger electron spectroscopy

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Hydrogenation kinetics and defect termination of post‐plasma‐treated chemical‐vapor‐deposited amorphous silicon film

Minoru Nakamura; Toshiyuki Ohno; Kenji Miyata; Nobutake Konishi; Takaya Suzuki

J. Appl. Phys. 65, 3061–3068 (1989) https://doi.org/10.1063/1.342699

Abstract

View articletitled, Hydrogenation kinetics and defect termination of post‐plasma‐treated chemical‐vapor‐deposited amorphous silicon film

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Investigation of the (100)Si/amorphous insulator interface structure by a half‐period image of a high‐resolution electron microscope

Iwao Ohdomari; Kazuhiko Kai; Tomo Ueno; Kazumasa Suzuki

J. Appl. Phys. 65, 3069–3071 (1989) https://doi.org/10.1063/1.342700

Abstract

View articletitled, Investigation of the (100)Si/amorphous insulator interface structure by a half‐period image of a high‐resolution electron microscope

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An electron trap related to phosphorus deficiency in high‐purity InP grown by metalorganic chemical vapor deposition

Norio Yamamoto; Kunihiko Uwai; Kenichiro Takahei

J. Appl. Phys. 65, 3072–3075 (1989) https://doi.org/10.1063/1.342701

Abstract

View articletitled, An electron trap related to phosphorus deficiency in high‐purity InP grown by metalorganic chemical vapor deposition

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Physics and design of hot‐electron spectrometers and transistors

P. H. Beton; A. P. Long; M. J. Kelly

J. Appl. Phys. 65, 3076–3079 (1989) https://doi.org/10.1063/1.342702

Abstract

View articletitled, Physics and design of hot‐electron spectrometers and transistors

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Annealing behavior of undoped Hg_0.8Cd_0.2Te epitaxial films at low temperatures

H. R. Vydyanath; C. H. Hiner

J. Appl. Phys. 65, 3080–3088 (1989) https://doi.org/10.1063/1.342703

Abstract

View articletitled, Annealing behavior of undoped Hg0.8Cd0.2Te epitaxial films at low temperatures

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Impurity scattering with semiclassical screening in multiband quasi‐one‐dimensional systems

Yilin Weng; J. P. Leburton

J. Appl. Phys. 65, 3089–3095 (1989) https://doi.org/10.1063/1.342704

Abstract

View articletitled, Impurity scattering with semiclassical screening in multiband quasi‐one‐dimensional systems

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Electronic structures of In_1−xGa_xAs‐InP strained‐layer quantum wells

Mau‐Phon Houng; Yia‐Chung Chang

J. Appl. Phys. 65, 3096–3100 (1989) https://doi.org/10.1063/1.342705

Abstract

View articletitled, Electronic structures of In1−xGaxAs‐InP strained‐layer quantum wells

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Investigation of high‐quality GaAs:In layers grown by molecular‐beam epitaxy

A. Uddin; T. G. Andersson

J. Appl. Phys. 65, 3101–3106 (1989) https://doi.org/10.1063/1.342706

Abstract

View articletitled, Investigation of high‐quality GaAs:In layers grown by molecular‐beam epitaxy

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The role of hydrogen in altering the electrical properties of gold, titanium, and tungsten films

K. P. Rodbell; P. J. Ficalora

J. Appl. Phys. 65, 3107–3117 (1989) https://doi.org/10.1063/1.342707

Abstract

View articletitled, The role of hydrogen in altering the electrical properties of gold, titanium, and tungsten films

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Electrical behavior of a static hole inversion layer at the i‐AlAs/n‐GaAs heterojunction

Q.‐D. Qian; M. R. Melloch; J. A. Cooper, Jr.

J. Appl. Phys. 65, 3118–3126 (1989) https://doi.org/10.1063/1.342708

Abstract

View articletitled, Electrical behavior of a static hole inversion layer at the i‐AlAs/n‐GaAs heterojunction

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Wentzel–Kramers–Brillouin approximation for a quantum well with internal and external fields

A. B. Wallace; W. D. Deering

J. Appl. Phys. 65, 3127–3129 (1989) https://doi.org/10.1063/1.343400

Abstract

View articletitled, Wentzel–Kramers–Brillouin approximation for a quantum well with internal and external fields

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Single‐crystal YBa₂Cu₃O_7−x and Bi₂Ca_1+xSr_2−xCu₂O_8+y surfaces and Ag adatom‐induced modification

H. M. Meyer III; D. M. Hill; T. J. Wagener; J. H. Weaver; C. F. Gallo; K. C. Goretta

J. Appl. Phys. 65, 3130–3135 (1989) https://doi.org/10.1063/1.342709

Abstract

View articletitled, Single‐crystal YBa2Cu3O7−x and Bi2Ca1+xSr2−xCu2O8+y surfaces and Ag adatom‐induced modification

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Mechanical and high‐temperature (920 °C) magnetic field grain alignment of polycrystalline (Ho,Y)Ba₂Cu₃O_7−δ

A. Lusnikov; L. L. Miller; R. W. McCallum; Sreeparna Mitra; W. C. Lee; D. C. Johnston

J. Appl. Phys. 65, 3136–3141 (1989) https://doi.org/10.1063/1.342710

Abstract

View articletitled, Mechanical and high‐temperature (920 °C) magnetic field grain alignment of polycrystalline (Ho,Y)Ba2Cu3O7−δ

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Preparation and microstructure of La‐containing R‐Fe‐B permanent magnets

Weizhong Tang; Shouzeng Zhou; Run Wang

J. Appl. Phys. 65, 3142–3145 (1989) https://doi.org/10.1063/1.342711

Abstract

View articletitled, Preparation and microstructure of La‐containing R‐Fe‐B permanent magnets

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Magnetization curling in a finite cylinder

Y. Ishii; M. Sato

J. Appl. Phys. 65, 3146–3150 (1989) https://doi.org/10.1063/1.342712

Abstract

View articletitled, Magnetization curling in a finite cylinder

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Magnetic properties of Fe/Co, Fe/CoFe, and (Fe/Co)/SiO₂ multilayer films

Masakatsu Senda; Yasuhiro Nagai

J. Appl. Phys. 65, 3151–3156 (1989) https://doi.org/10.1063/1.342690

Abstract

View articletitled, Magnetic properties of Fe/Co, Fe/CoFe, and (Fe/Co)/SiO2 multilayer films

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Magnetic properties of multilayer films consisting of Fe and nonmagnetic layers

Masakatsu Senda; Yasuhiro Nagai

J. Appl. Phys. 65, 3157–3160 (1989) https://doi.org/10.1063/1.342691

Abstract

View articletitled, Magnetic properties of multilayer films consisting of Fe and nonmagnetic layers

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Domain structure and microstructure of CoNi oblique incidence thin films

Huei‐Min Ho; George J.‐S. Gau; Gareth Thomas

J. Appl. Phys. 65, 3161–3166 (1989) https://doi.org/10.1063/1.342692

Abstract

View articletitled, Domain structure and microstructure of CoNi oblique incidence thin films

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The cooling rate dependence of cation distributions in CoFe₂O₄

Mark R. De Guire; Robert C. O’Handley; Gretchen Kalonji

J. Appl. Phys. 65, 3167–3172 (1989) https://doi.org/10.1063/1.342667

Abstract

View articletitled, The cooling rate dependence of cation distributions in CoFe2O4

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Thermodynamic theory of PbZrO₃

M. J. Haun; T. J. Harvin; M. T. Lanagan; Z. Q. Zhuang; S. J. Jang; L. E. Cross

J. Appl. Phys. 65, 3173–3180 (1989) https://doi.org/10.1063/1.342668

Abstract

View articletitled, Thermodynamic theory of PbZrO3

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Gain dynamics of Tm:Ho:YAG pumped in near infrared

Jacek K. Tyminski; Douglas M. Franich; Milan Kokta

J. Appl. Phys. 65, 3181–3188 (1989) https://doi.org/10.1063/1.342669

Abstract

View articletitled, Gain dynamics of Tm:Ho:YAG pumped in near infrared

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Picosecond time evolution of photoexcited hot‐electron mobility in GaAs and the speed of photoresponse

A. S. Vengurlekar; Sudhanshu S. Jha

J. Appl. Phys. 65, 3189–3196 (1989) https://doi.org/10.1063/1.342670

Abstract

View articletitled, Picosecond time evolution of photoexcited hot‐electron mobility in GaAs and the speed of photoresponse

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Pulsed laser‐induced vaporization from the surface of a binary oxide (zinc ferrite) and its implications for synthesis of thin films

Rashmi Nawathey; R. D. Vispute; S. M. Chaudhari; S. M. Kanetkar; S. B. Ogale; A. Mitra; S. K. Date

J. Appl. Phys. 65, 3197–3204 (1989) https://doi.org/10.1063/1.342671

Abstract

View articletitled, Pulsed laser‐induced vaporization from the surface of a binary oxide (zinc ferrite) and its implications for synthesis of thin films

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Thermionic emission including both space‐charge and image forces

T. P. Lin; Genghmun Eng

J. Appl. Phys. 65, 3205–3211 (1989) https://doi.org/10.1063/1.342672

Abstract

View articletitled, Thermionic emission including both space‐charge and image forces

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Selective titanium disilicide by low‐pressure chemical vapor deposition

G. J. Reynolds; C. B. Cooper III; P. J. Gaczi

J. Appl. Phys. 65, 3212–3218 (1989) https://doi.org/10.1063/1.342673

Abstract

View articletitled, Selective titanium disilicide by low‐pressure chemical vapor deposition

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The shapes of first‐stage sinters

Francois Amar; J. Bernholc; R. Stephen Berry; Julius Jellinek; Peter Salamon

J. Appl. Phys. 65, 3219–3225 (1989) https://doi.org/10.1063/1.342674

Abstract

View articletitled, The shapes of first‐stage sinters

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The etching mechanism of titanium polycide in a mixture of SF₆ and O₂

A. Manenschijn; G. C. A. M. Janssen; E. van der Drift; S. Radelaar

J. Appl. Phys. 65, 3226–3235 (1989) https://doi.org/10.1063/1.342675

Abstract

View articletitled, The etching mechanism of titanium polycide in a mixture of SF6 and O2

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Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe₂/CdS solar cell heterojunctions

J. Santamaria; G. Gonzalez Diaz; E Iborra; I. Martil; F. Sanchez‐Quesada

J. Appl. Phys. 65, 3236–3241 (1989) https://doi.org/10.1063/1.342676

Abstract

View articletitled, Role of deep levels and interface states in the capacitance characteristics of all‐sputtered CuInSe2/CdS solar cell heterojunctions

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Minimum dc electric field requirements for removing powder layers from a conductive surface

Vincent J. Novick; Charles R. Hummer; Patrick F. Dunn

J. Appl. Phys. 65, 3242–3247 (1989) https://doi.org/10.1063/1.342677

Abstract

View articletitled, Minimum dc electric field requirements for removing powder layers from a conductive surface

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rf‐sputtered tungsten‐amorphous silicon Schottky barrier diodes

M. Khaidar; A. Essafti; A. Bennouna; E. L. Ameziane; M. Brunel

J. Appl. Phys. 65, 3248–3252 (1989) https://doi.org/10.1063/1.342678

Abstract

View articletitled, rf‐sputtered tungsten‐amorphous silicon Schottky barrier diodes

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Advantages of an indirect semiconductor quantum well system for infrared detection

Chan‐Lon Yang; Dee‐Son Pan; Robert Somoano

J. Appl. Phys. 65, 3253–3258 (1989) https://doi.org/10.1063/1.342679

Abstract

View articletitled, Advantages of an indirect semiconductor quantum well system for infrared detection

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Deuterium magnetic resonance and permeability in porous media

A. H. Thompson; S. W. Sinton; S. L. Huff; A. J. Katz; R. A. Raschke; G. A. Gist

J. Appl. Phys. 65, 3259–3263 (1989) https://doi.org/10.1063/1.342680

Abstract

View articletitled, Deuterium magnetic resonance and permeability in porous media

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Effect of beam self‐rotation on a Čerenkov free‐electron laser

G. Mishra

J. Appl. Phys. 65, 3264–3266 (1989) https://doi.org/10.1063/1.342681

Abstract

View articletitled, Effect of beam self‐rotation on a Čerenkov free‐electron laser

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Smith–Purcell oscillator in an exponential gain regime

Levi Schächter; Amiram Ron

J. Appl. Phys. 65, 3267–3269 (1989) https://doi.org/10.1063/1.342682

Abstract

View articletitled, Smith–Purcell oscillator in an exponential gain regime

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Determination of shallow minority‐acceptor concentration in multiply doped silicon

G. Bambakidis; G. J. Brown

J. Appl. Phys. 65, 3270–3271 (1989) https://doi.org/10.1063/1.342683

Abstract

View articletitled, Determination of shallow minority‐acceptor concentration in multiply doped silicon

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Radiation‐induced carbon‐related defects in p‐type silicon

A. R. Frederickson; A. S. Karakashian; P. J. Drevinsky; C. E. Caefer

J. Appl. Phys. 65, 3272–3274 (1989) https://doi.org/10.1063/1.343411

Abstract

View articletitled, Radiation‐induced carbon‐related defects in p‐type silicon

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Scanning tunneling microscope investigation of (100) and (001) faces of YBa₂Cu₃O₇₋_δ

Ph. Niedermann; H. J. Scheel; W. Sadowski

J. Appl. Phys. 65, 3274–3276 (1989) https://doi.org/10.1063/1.342684

Abstract

View articletitled, Scanning tunneling microscope investigation of (100) and (001) faces of YBa2Cu3O7−δ

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Sol‐gel preparation of high‐T_c Bi‐Ca‐Sr‐Cu‐O and Y‐Ba‐Ca‐O superconductors

J. Fransaer; J. R. Roos; L. Delaey; O. Van Der Biest; O. Arkens; J. P. Celis

J. Appl. Phys. 65, 3277–3279 (1989) https://doi.org/10.1063/1.342685

Abstract

View articletitled, Sol‐gel preparation of high‐Tc Bi‐Ca‐Sr‐Cu‐O and Y‐Ba‐Ca‐O superconductors

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High‐pressure Raman scattering in dimethyl phenyl silanol

F. Cansell; J. P. Petitet; D. Fabre

J. Appl. Phys. 65, 3280–3282 (1989) https://doi.org/10.1063/1.342686

Abstract

View articletitled, High‐pressure Raman scattering in dimethyl phenyl silanol

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Observation of radiative and nonradiative tunneling in GaAs/Al_xGa_1−xAs heterojunction bipolar transistors with compositionally graded base‐emitter heterojunctions

T. J. de Lyon; H. C. Casey, Jr.; P. M. Enquist; J. A. Hutchby; A. J. SpringThorpe

J. Appl. Phys. 65, 3282–3285 (1989) https://doi.org/10.1063/1.342687

Abstract

View articletitled, Observation of radiative and nonradiative tunneling in GaAs/AlxGa1−xAs heterojunction bipolar transistors with compositionally graded base‐emitter heterojunctions

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Lattice vibration spectra of GaP_1−xSb_x and InP_1−xSb_x

Y. T. Cherng; D. H. Jaw; M. J. Jou; G. B. Stringfellow

J. Appl. Phys. 65, 3285–3288 (1989) https://doi.org/10.1063/1.342688

Abstract

View articletitled, Lattice vibration spectra of GaP1−xSbx and InP1−xSbx

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Acousto‐optic performance of monomode dilute melt proton exchange waveguiding Bragg cells

S. A. Reid; A. Farr; A. M. Hall; M. Varasi; A. Annulli; A. Vannucci

J. Appl. Phys. 65, 3288–3290 (1989) https://doi.org/10.1063/1.342689

Abstract

View articletitled, Acousto‐optic performance of monomode dilute melt proton exchange waveguiding Bragg cells

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Electro‐optical response characteristics of rare‐earth‐doped alkaline‐earth‐sulfide electroluminescent devices

Masahiko Ando; Yoshimasa A. Ono

J. Appl. Phys. 65, 3290–3292 (1989) https://doi.org/10.1063/1.342664

Abstract

View articletitled, Electro‐optical response characteristics of rare‐earth‐doped alkaline‐earth‐sulfide electroluminescent devices

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Optical modulation of light transmission in GaAs doping superlattices

P. P. Ruden; J. A. Lehman; N. Khan; M. K. Hibbs‐Brenner; E. Kalweit

J. Appl. Phys. 65, 3293–3295 (1989) https://doi.org/10.1063/1.342665

Abstract

View articletitled, Optical modulation of light transmission in GaAs doping superlattices

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Temperature‐dependent transmission extended electron energy‐loss fine structure of aluminum

Mark M. Disko; George Meitzner; Channing C. Ahn; Ondrej L. Krivanek

J. Appl. Phys. 65, 3295–3297 (1989) https://doi.org/10.1063/1.343410

Abstract

View articletitled, Temperature‐dependent transmission extended electron energy‐loss fine structure of aluminum

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Effects of deuterium plasmas on silicon near‐surface properties

J. L. Lindström; G. S. Oehrlein; G. J. Scilla; A. S. Yapsir; J. W. Corbett

J. Appl. Phys. 65, 3297–3300 (1989) https://doi.org/10.1063/1.342666

Abstract

View articletitled, Effects of deuterium plasmas on silicon near‐surface properties

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Raman scattering evaluation of Pb₂CrO₅ thin film on a glass substrate

Shinzo Yoshida; Kohji Toda

J. Appl. Phys. 65, 3300–3302 (1989) https://doi.org/10.1063/1.342641

Abstract

View articletitled, Raman scattering evaluation of Pb2CrO5 thin film on a glass substrate

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Erratum: ‘‘Charge density excitations in semiconductor superlattices’’ [J. Appl. Phys. 62, 1895 (1987)]

Manvir S. Kushwaha

J. Appl. Phys. 65, 3303 (1989) https://doi.org/10.1063/1.343436

View articletitled, Erratum: ‘‘Charge density excitations in semiconductor superlattices’’ [J. Appl. Phys. 62, 1895 (1987)]

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