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Mean projected range and range straggling of 50‐ to 400‐keV Hg+ in glass
J. Appl. Phys. 64, 3341–3344 (1988)
https://doi.org/10.1063/1.341515
Impurity ion temperature and toroidal rotation velocity in JET from high‐resolution x‐ray and XUV spectroscopy
J. Appl. Phys. 64, 3345–3352 (1988)
https://doi.org/10.1063/1.341516
Emission distribution, brightness, and mechanical stability of the LaB6 triode electron gun
J. Appl. Phys. 64, 3380–3392 (1988)
https://doi.org/10.1063/1.341522
Single‐pixel bistability with nonlinear interference filters
J. Appl. Phys. 64, 3393–3397 (1988)
https://doi.org/10.1063/1.341523
Finite element analysis of thermal stresses in optical storage media
J. Appl. Phys. 64, 3398–3401 (1988)
https://doi.org/10.1063/1.341524
Fast photoelectrochemical etching of quarter‐micrometer diffraction gratings in n‐InP
J. Appl. Phys. 64, 3402–3406 (1988)
https://doi.org/10.1063/1.341495
Variable angle of incidence spectroscopic ellipsometric characterization of TiO2/Ag/TiO2 optical coatings
J. Appl. Phys. 64, 3407–3410 (1988)
https://doi.org/10.1063/1.342491
dc surface flashover mechanism along solids in vacuum based on a collision‐ionization model
J. Appl. Phys. 64, 3411–3418 (1988)
https://doi.org/10.1063/1.341496
Production of H− ions with addition of cesium or xenon to a hydrogen discharge in a small multicusp ion source
J. Appl. Phys. 64, 3424–3428 (1988)
https://doi.org/10.1063/1.341498
Layer disordering of GaAs‐AlGaAs superlattices by diffusion of laser‐incorporated Si
J. Appl. Phys. 64, 3439–3444 (1988)
https://doi.org/10.1063/1.341476
Point defect sinks in self‐ion‐irradiated nickel: A self‐diffusion investigation
J. Appl. Phys. 64, 3445–3455 (1988)
https://doi.org/10.1063/1.341477
Hydrogen‐deuterium reactions on palladium‐iron bilayers: A permeation investigation
J. Appl. Phys. 64, 3461–3467 (1988)
https://doi.org/10.1063/1.341479
The effect of a Ga prelayer on the beginning of GaAs epitaxy on Si
J. Appl. Phys. 64, 3472–3475 (1988)
https://doi.org/10.1063/1.341481
The effect of InP substrate misorientation on GaInAs‐AlInAs interface and alloy quality
J. Appl. Phys. 64, 3476–3480 (1988)
https://doi.org/10.1063/1.341482
Bonding configuration of fluorine in fluorinated silicon nitride films
J. Appl. Phys. 64, 3481–3486 (1988)
https://doi.org/10.1063/1.341483
Graphoepitaxial growth of ZnS on a textured natural crystalline surface relief foreign substrate
J. Appl. Phys. 64, 3492–3496 (1988)
https://doi.org/10.1063/1.341485
Trap suppression by isoelectronic In or Sb doping in Si‐doped n‐GaAs grown by molecular‐beam epitaxy
J. Appl. Phys. 64, 3497–3504 (1988)
https://doi.org/10.1063/1.341486
Interfacial reactions of cobalt thin films on BF+2 ion‐implanted (001) silicon
J. Appl. Phys. 64, 3505–3511 (1988)
https://doi.org/10.1063/1.341487
Concentration profiles of composing ions in radio frequency sputtered Sr (Zr0.2Ti0.8)O3 films
J. Appl. Phys. 64, 3512–3515 (1988)
https://doi.org/10.1063/1.341488
The formation of hydrogen passivated silicon single‐crystal surfaces using ultraviolet cleaning and HF etching
J. Appl. Phys. 64, 3516–3521 (1988)
https://doi.org/10.1063/1.341489
Measurement of electron diffusion lengths in ITO/p‐InP by surface photocurrents
J. Appl. Phys. 64, 3528–3531 (1988)
https://doi.org/10.1063/1.341491
Modifications in the one‐particle Monte Carlo method for solving the Boltzmann equation with changed variables
J. Appl. Phys. 64, 3532–3537 (1988)
https://doi.org/10.1063/1.342470
Formation and properties of In‐doped high‐conductivity CdS film
J. Appl. Phys. 64, 3542–3550 (1988)
https://doi.org/10.1063/1.341493
Electron‐spin‐resonance study of radiation‐induced paramagnetic defects in oxides grown on (100) silicon substrates
J. Appl. Phys. 64, 3551–3557 (1988)
https://doi.org/10.1063/1.341494
Electrically active point defects in amorphous silicon nitride: An illumination and charge injection study
J. Appl. Phys. 64, 3558–3563 (1988)
https://doi.org/10.1063/1.341499
Time‐dependent modeling of resonant‐tunneling diodes from direct solution of the Schrödinger equation
J. Appl. Phys. 64, 3564–3569 (1988)
https://doi.org/10.1063/1.341500
A high‐sensitivity torsional magnetometer for two‐dimensional electron systems
J. Appl. Phys. 64, 3570–3573 (1988)
https://doi.org/10.1063/1.341417
Influence of microstructure on the resistivity of MoSi2 thin films
J. Appl. Phys. 64, 3574–3580 (1988)
https://doi.org/10.1063/1.341418
Doping effects of 3D metal on single‐phase YBa2Cu3O7−δ
J. Appl. Phys. 64, 3589–3592 (1988)
https://doi.org/10.1063/1.341393
Structural and microstructural characterization of a high‐Tc superconducting YBaSrCu3O7−δ compound
J. Appl. Phys. 64, 3593–3597 (1988)
https://doi.org/10.1063/1.341394
Correlation of superconducting properties and oxygen concentration in Y1Ba2Cu3O7−δ films via Raman spectroscopy
J. Appl. Phys. 64, 3598–3601 (1988)
https://doi.org/10.1063/1.341395
Surface and volume anisotropy from dipole‐dipole interactions in ultrathin ferromagnetic films
J. Appl. Phys. 64, 3610–3613 (1988)
https://doi.org/10.1063/1.341397
Annealing temperature dependence of TC of thin‐film Gd grown on a glass substrate
J. Appl. Phys. 64, 3614–3619 (1988)
https://doi.org/10.1063/1.341398
Stress‐induced changes in the magnetic properties of some nickel‐copper and nickel‐cobalt alloys
J. Appl. Phys. 64, 3620–3628 (1988)
https://doi.org/10.1063/1.341399
Study of molecular‐beam epitaxially grown GexSi1−x/Si layers by Raman scattering
J. Appl. Phys. 64, 3634–3636 (1988)
https://doi.org/10.1063/1.341401
Fourier transform infrared spectroscopy studies at low temperatures of MPX3 layered compounds
J. Appl. Phys. 64, 3637–3640 (1988)
https://doi.org/10.1063/1.341402
Temperature dependence of nonlinear absorption in InP doping superlattices
J. Appl. Phys. 64, 3641–3646 (1988)
https://doi.org/10.1063/1.341403
Some remarks on excitation spectra versus photoluminescence spectra for the evaluation of quantum wells
J. Appl. Phys. 64, 3647–3649 (1988)
https://doi.org/10.1063/1.341404
Excitation process of the Tb emission center in a ZnS:Tb,F thin‐film electroluminescent device
J. Appl. Phys. 64, 3650–3657 (1988)
https://doi.org/10.1063/1.341405
Correlation between electrical and photoluminescence measurements in high‐quality p‐type CdTe
J. Appl. Phys. 64, 3658–3662 (1988)
https://doi.org/10.1063/1.341406
Laser‐induced reemission of silicon atoms implanted into quartz
J. Appl. Phys. 64, 3663–3666 (1988)
https://doi.org/10.1063/1.341407
Laser‐induced thermal desorption of moisture from a surface in atmospheric conditions
J. Appl. Phys. 64, 3667–3671 (1988)
https://doi.org/10.1063/1.341408
Interactions of dislocations in GaAs grown on Si substrates with InGaAs‐GaAsP strained layered superlattices
J. Appl. Phys. 64, 3672–3677 (1988)
https://doi.org/10.1063/1.341409
Growth, structure, and physical properties of single‐phase metastable fcc Cu1−xCrx solid solutions
J. Appl. Phys. 64, 3689–3696 (1988)
https://doi.org/10.1063/1.341412
Anisotropic etching of polycrystalline silicon with a hot Cl2 molecular beam
J. Appl. Phys. 64, 3697–3705 (1988)
https://doi.org/10.1063/1.341413
Optical microphone for photoacoustic spectroscopy
J. Appl. Phys. 64, 3722–3724 (1988)
https://doi.org/10.1063/1.341416
Optical dielectric functions for amorphous Al2O3 and γ‐Al2O3
J. Appl. Phys. 64, 3727–3730 (1988)
https://doi.org/10.1063/1.341367
Evanescent wave infrared spectroscopy of liquids using silver halide optical fibers
J. Appl. Phys. 64, 3732–3734 (1988)
https://doi.org/10.1063/1.341369
Three and six logic states by the vertical integration of InAlAs/InGaAs resonant tunneling structures
J. Appl. Phys. 64, 3735–3736 (1988)
https://doi.org/10.1063/1.341370
Optical and electrical properties of sputter‐deposited Al films close to the percolation threshold
J. Appl. Phys. 64, 3740–3742 (1988)
https://doi.org/10.1063/1.341372
Doping dependence of the specific contact resistance of NiSi2 on (100) n‐Si
J. Appl. Phys. 64, 3748–3749 (1988)
https://doi.org/10.1063/1.341375
Simultaneous operation of gain‐ and index‐guided lateral modes in twin‐stripe laser diode arrays
J. Appl. Phys. 64, 3750–3751 (1988)
https://doi.org/10.1063/1.341376
Radiated power from short period undulators with a large magnet gap
J. Appl. Phys. 64, 3752–3753 (1988)
https://doi.org/10.1063/1.341377
A method for preparing superconducting single crystals of Ba2GdCu3O7−y
J. Appl. Phys. 64, 3754–3755 (1988)
https://doi.org/10.1063/1.341378
120‐ps duration pulses by active mode locking of an XeCl laser
J. Appl. Phys. 64, 3758–3760 (1988)
https://doi.org/10.1063/1.341380
A new secondary ion mass spectrometry technique for III‐V semiconductor compounds using the molecular ions CsM+
J. Appl. Phys. 64, 3760–3762 (1988)
https://doi.org/10.1063/1.341381
Brillouin scattering study of equation of state of multicomponent liquids: Model oil samples
J. Appl. Phys. 64, 3766–3768 (1988)
https://doi.org/10.1063/1.341383
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Efficient methods for extracting superconducting resonator loss in the single-photon regime
Cliff Chen, David Perello, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.