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A basic analysis of pulsed photoacoustic signals using the finite elements method
J. Appl. Phys. 64, 972–976 (1988)
https://doi.org/10.1063/1.341804
Cubic zirconia as a high‐quality facet coating for semiconductor lasers
J. Appl. Phys. 64, 994–999 (1988)
https://doi.org/10.1063/1.341807
Crystallization process of Sb‐Te alloy films for optical storage
J. Appl. Phys. 64, 1000–1004 (1988)
https://doi.org/10.1063/1.341908
Surface heat transfer coefficient, heat efficiency, and temperature of pulsed solid‐state lasers
J. Appl. Phys. 64, 1015–1021 (1988)
https://doi.org/10.1063/1.341910
Emission spectra of single quantum well lasers with inhomogeneous current injection
J. Appl. Phys. 64, 1022–1026 (1988)
https://doi.org/10.1063/1.341911
A precise angular spectrum of plane‐waves diffraction theory for leaky wave materials
J. Appl. Phys. 64, 1027–1032 (1988)
https://doi.org/10.1063/1.341912
Nonlinear electroacoustic interaction between a bias electric field and acoustic Lamb modes in LiNbO3 plates
J. Appl. Phys. 64, 1033–1039 (1988)
https://doi.org/10.1063/1.341913
Measurement of surface acoustic wave slowness curves with a scanning laser acoustic microscope
J. Appl. Phys. 64, 1040–1043 (1988)
https://doi.org/10.1063/1.341914
Modeling of an electron cyclotron resonance heated mirror plasma for highly charged ion and soft x‐ray sources
J. Appl. Phys. 64, 1055–1067 (1988)
https://doi.org/10.1063/1.341890
Impulse coupling to targets in vacuum by KrF, HF, and CO2 single‐pulse lasers
C. R. Phipps, Jr.; T. P. Turner; R. F. Harrison; G. W. York; W. Z. Osborne; G. K. Anderson; X. F. Corlis; L. C. Haynes; H. S. Steele; K. C. Spicochi; T. R. King
J. Appl. Phys. 64, 1083–1096 (1988)
https://doi.org/10.1063/1.341867
Comparison of partition function calculations for metal plasmas
J. Appl. Phys. 64, 1101–1107 (1988)
https://doi.org/10.1063/1.342506
Wave dispersion theory in a plasma column bounded by a cylindrical waveguide
J. Appl. Phys. 64, 1108–1115 (1988)
https://doi.org/10.1063/1.341869
Reliability of the diffusion approximation for the ballistic relocation function in atomic mixing by ion beams
J. Appl. Phys. 64, 1120–1124 (1988)
https://doi.org/10.1063/1.341871
Time‐dependent theory of optical‐beam‐induced current imaging of defects in semiconductors
J. Appl. Phys. 64, 1131–1135 (1988)
https://doi.org/10.1063/1.341873
The effect of nonstoichiometry and polarity of the (111) plane on microtwin formation in ion‐implanted GaAs
J. Appl. Phys. 64, 1136–1139 (1988)
https://doi.org/10.1063/1.341874
Defect generation in silicon dioxide from soft x‐ray synchrotron radiation
J. Appl. Phys. 64, 1145–1151 (1988)
https://doi.org/10.1063/1.341876
Phase equilibrium and stability of elastically stressed heteroepitaxial thin films
J. Appl. Phys. 64, 1155–1165 (1988)
https://doi.org/10.1063/1.341878
Multiple‐scattering theoretic approach to the thermal expansion of inhomogeneous materials
J. Appl. Phys. 64, 1166–1172 (1988)
https://doi.org/10.1063/1.341879
On epilayer tilt in ZnSe/Ge heterostructures prepared by molecular‐beam epitaxy
J. Appl. Phys. 64, 1201–1205 (1988)
https://doi.org/10.1063/1.341885
Thermally stimulated current studies of hole transport in a layered organic photoconductor
J. Appl. Phys. 64, 1229–1232 (1988)
https://doi.org/10.1063/1.341865
Effect of substrate materials in the growth of ZnSe on GaAs and GaP substrates
J. Appl. Phys. 64, 1245–1248 (1988)
https://doi.org/10.1063/1.341842
Range of validity of the surface‐photovoltage diffusion length measurement: A computer simulation
J. Appl. Phys. 64, 1254–1265 (1988)
https://doi.org/10.1063/1.341843
Type conversion near the p‐Si substrate surface by growing GaAs on Si substrates
J. Appl. Phys. 64, 1266–1270 (1988)
https://doi.org/10.1063/1.341844
An improved effective dipole theory for band lineups in semiconductor heterojunctions
J. Appl. Phys. 64, 1271–1273 (1988)
https://doi.org/10.1063/1.341845
Hydrogen and ammonia response of metal‐silicon dioxide‐silicon structures with thin platinum gates
J. Appl. Phys. 64, 1274–1283 (1988)
https://doi.org/10.1063/1.341846
Preferentially oriented epitaxial Y‐Ba‐Cu‐O films prepared by the ion beam sputtering method
J. Appl. Phys. 64, 1292–1295 (1988)
https://doi.org/10.1063/1.341848
Photoemission and inverse photoemission studies of La adatom interactions with YBa2Cu3O6.9
J. Appl. Phys. 64, 1296–1300 (1988)
https://doi.org/10.1063/1.341849
The effects of high‐fluence neutron irradiation on the superconducting properties of magnetron sputtered NbN films
J. Appl. Phys. 64, 1301–1306 (1988)
https://doi.org/10.1063/1.341850
Microwave spectroscopy and magnetization measurements of flux trapping and hysteresis in YBa2Cu3O7−δ
J. Appl. Phys. 64, 1312–1317 (1988)
https://doi.org/10.1063/1.341852
The measurement of narrow domain‐wall widths in SmCo5 using differential phase contrast electron microscopy
J. Appl. Phys. 64, 1338–1342 (1988)
https://doi.org/10.1063/1.341856
Photoluminescence of GaAs films grown by vacuum chemical epitaxy
J. Appl. Phys. 64, 1358–1362 (1988)
https://doi.org/10.1063/1.341859
Stimulated luminescence in rare‐earth‐doped MgS
J. Appl. Phys. 64, 1363–1366 (1988)
https://doi.org/10.1063/1.341860
Peak parameters from peak area to height ratio in thermally stimulated depolarization and thermoluminescence
J. Appl. Phys. 64, 1367–1370 (1988)
https://doi.org/10.1063/1.341861
Silver distribution in wet‐sensitized As10Ge22.5Se67.5 films after electron beam exposure
J. Appl. Phys. 64, 1378–1383 (1988)
https://doi.org/10.1063/1.341863
Absorption, fluorescence, and electron spin resonance investigation of tervalent cerium activated LaMgAl11O19
J. Appl. Phys. 64, 1398–1404 (1988)
https://doi.org/10.1063/1.342475
Physical model of photostimulated luminescence of x‐ray irradiated BaFBr:Eu2+
J. Appl. Phys. 64, 1405–1412 (1988)
https://doi.org/10.1063/1.341838
Infrared spectra in nonstoichiometric yttria‐stabilized zirconia mixed crystals at elevated temperatures
J. Appl. Phys. 64, 1413–1417 (1988)
https://doi.org/10.1063/1.341839
Pulsed electromagnetic inductive plasma‐enhanced chemical‐vapor deposition of amorphous carbon films
J. Appl. Phys. 64, 1440–1445 (1988)
https://doi.org/10.1063/1.341816
Dynamic consolidation of type 304 stainless‐steel powders in gas gun experiments
J. Appl. Phys. 64, 1446–1456 (1988)
https://doi.org/10.1063/1.342504
Initial solid‐state reactions between crystalline Sb and amorphous Si thin films
J. Appl. Phys. 64, 1457–1463 (1988)
https://doi.org/10.1063/1.341817
Organometallic vapor‐phase epitaxial growth and characterization of the metastable alloy InP1−xSbx
J. Appl. Phys. 64, 1472–1475 (1988)
https://doi.org/10.1063/1.341820
Preparation and electrical properties of polymeric TCNQ and TCNE films by plasma polymerization
J. Appl. Phys. 64, 1476–1483 (1988)
https://doi.org/10.1063/1.341821
Copper‐catalyzed etching of silicon by F2: Kinetics and feature morphology
J. Appl. Phys. 64, 1494–1498 (1988)
https://doi.org/10.1063/1.341823
Dynamics of flame propagation using laser‐induced spark initiation: Ignition energy measurements
J. Appl. Phys. 64, 1499–1507 (1988)
https://doi.org/10.1063/1.341824
A thermionic energy converter with polycrystalline molybdenum electrodes
J. Appl. Phys. 64, 1508–1512 (1988)
https://doi.org/10.1063/1.341825
Microwave and millimeter‐wave power generation in silicon carbide avalanche devices
J. Appl. Phys. 64, 1533–1540 (1988)
https://doi.org/10.1063/1.341829
Gain suppression in semiconductor lasers: The influence of dynamic carrier temperature changes
J. Appl. Phys. 64, 1555–1557 (1988)
https://doi.org/10.1063/1.341833
Characterization of the Mn acceptor level in GaAs
J. Appl. Phys. 64, 1564–1567 (1988)
https://doi.org/10.1063/1.341837
Magneto‐optic nonreciprocal phase shift in (YLa)3 (FeGa)5O12 single‐mode channel waveguides
J. Appl. Phys. 64, 1575–1577 (1988)
https://doi.org/10.1063/1.342503
Diffusion studies of the Si δ‐doped GaAs by capacitance‐voltage measurement
J. Appl. Phys. 64, 1578–1580 (1988)
https://doi.org/10.1063/1.341789
Bound‐to‐extended state absorption GaAs superlattice transport infrared detectors
J. Appl. Phys. 64, 1591–1593 (1988)
https://doi.org/10.1063/1.341794
Growth of (111) GaAs on (111) Si using molecular‐beam epitaxy
J. Appl. Phys. 64, 1596–1598 (1988)
https://doi.org/10.1063/1.341796
Ion beam rehydrogenation and post‐hydrogenation of a‐Si:H
J. Appl. Phys. 64, 1604–1607 (1988)
https://doi.org/10.1063/1.341800
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.