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3D transient eddy current fields using the u‐v integral‐eigenvalue formulation
J. Appl. Phys. 63, 991–996 (1988)
https://doi.org/10.1063/1.339998
The effect of accelerating gap geometry on the beam breakup instability in linear induction accelerators
J. Appl. Phys. 63, 997–1008 (1988)
https://doi.org/10.1063/1.341136
A simplified thermal model for calculating the maximum output power from a 1.3‐μm buried heterostructure laser
J. Appl. Phys. 63, 1009–1014 (1988)
https://doi.org/10.1063/1.339999
High‐speed photography of surface geometry effects in liquid/solid impact
J. Appl. Phys. 63, 1015–1021 (1988)
https://doi.org/10.1063/1.340000
Analysis of He‐implanted LiNbO3 by elastic recoil detection
J. Appl. Phys. 63, 1032–1036 (1988)
https://doi.org/10.1063/1.340002
Interactions between interstitial atoms in silicon: Arsenic‐argon‐boron and boron‐argon‐phosphorus
J. Appl. Phys. 63, 1037–1040 (1988)
https://doi.org/10.1063/1.340003
Interdiffusion and structural relaxation in Mo/Si multilayer films
J. Appl. Phys. 63, 1046–1051 (1988)
https://doi.org/10.1063/1.340005
Open‐tube Zn diffusion in GaAs using diethylzinc and trimethylarsenic: Experiment and model
J. Appl. Phys. 63, 1052–1059 (1988)
https://doi.org/10.1063/1.340006
A novel heteroepitaxy method of Ge films on CaF2 by electron beam exposure
J. Appl. Phys. 63, 1060–1064 (1988)
https://doi.org/10.1063/1.340007
Effect of interfacial oxide on solid‐phase epitaxy of Si films deposited on Si substrates
J. Appl. Phys. 63, 1065–1069 (1988)
https://doi.org/10.1063/1.340008
The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. II.
J. Appl. Phys. 63, 1093–1098 (1988)
https://doi.org/10.1063/1.340013
Influence of photoexcitation on hopping conduction in neutron‐transmutation‐doped GaAs
J. Appl. Phys. 63, 1099–1103 (1988)
https://doi.org/10.1063/1.340014
Conduction in n+‐i‐n+ thin‐film polycrystalline/silicon devices in relation to the film deposition conditions
J. Appl. Phys. 63, 1104–1110 (1988)
https://doi.org/10.1063/1.340015
Platinum silicide contact to arsenic‐doped polycrystalline silicon
J. Appl. Phys. 63, 1111–1116 (1988)
https://doi.org/10.1063/1.340016
Back bias effects on two‐dimensional electron gas
J. Appl. Phys. 63, 1121–1125 (1988)
https://doi.org/10.1063/1.341123
Transient transport in bulk Ga0.47ln0.53As and the two‐dimensional electron gas in Ga0.47ln0.53As/Al0.48ln0.52As
J. Appl. Phys. 63, 1126–1129 (1988)
https://doi.org/10.1063/1.340018
Flux‐flow‐type Josephson oscillator for millimeter and submillimeter wave region. IV. Thin‐film coupling
J. Appl. Phys. 63, 1130–1135 (1988)
https://doi.org/10.1063/1.340019
Properties of ion‐beam‐sputtered Ni/Fe artificial lattice film
J. Appl. Phys. 63, 1136–1140 (1988)
https://doi.org/10.1063/1.340020
Electron‐spin resonance and fluorescence investigation of LaMgAl11O19:Ti3+, a potential tunable laser material
J. Appl. Phys. 63, 1144–1151 (1988)
https://doi.org/10.1063/1.341139
Modulated ion beam studies of product formation and ejection in ion‐induced etching of GaAs by Cl2
J. Appl. Phys. 63, 1152–1157 (1988)
https://doi.org/10.1063/1.340022
Metal deposition at 532 nm using a laser transfer technique
J. Appl. Phys. 63, 1158–1162 (1988)
https://doi.org/10.1063/1.340023
Localized epitaxial growth of IrSi3 on (111) and (001) silicon
J. Appl. Phys. 63, 1163–1167 (1988)
https://doi.org/10.1063/1.340024
Initial evaporation rates from GaAs during rapid thermal processing
J. Appl. Phys. 63, 1168–1176 (1988)
https://doi.org/10.1063/1.339976
Interfacial reactions of platinum thin films on (111) and (001) germanium
J. Appl. Phys. 63, 1177–1181 (1988)
https://doi.org/10.1063/1.341137
In situ x‐ray diffraction measurement of Pd2Si transformation kinetics using a linear position‐sensitive detector
J. Appl. Phys. 63, 1182–1190 (1988)
https://doi.org/10.1063/1.339977
Characterization of multilayered tungsten/carbon thin films by various processes
J. Appl. Phys. 63, 1191–1195 (1988)
https://doi.org/10.1063/1.339978
Photosensitive properties of a hydrated mordenite‐AgI inclusion compound
J. Appl. Phys. 63, 1196–1197 (1988)
https://doi.org/10.1063/1.339979
p/n InP homojunction solar cells with a modified contacting scheme by liquid phase epitaxy
J. Appl. Phys. 63, 1198–1202 (1988)
https://doi.org/10.1063/1.339980
Control of the barrier height of triangular‐barrier diodes by doping their intrinsic layers
J. Appl. Phys. 63, 1207–1211 (1988)
https://doi.org/10.1063/1.339982
1.5‐μm GaInAsP planar buried heterostructure lasers grown using chemical‐beam‐epitaxial base structures
W. T. Tsang; J. E. Bowers; E. G. Burkhardt; J. A. Ditzenberger; D. P. Wilt; N. K. Dutta; S. G. Napholtz; T. M. Shen; Y. Twu; R. A. Logan
J. Appl. Phys. 63, 1218–1220 (1988)
https://doi.org/10.1063/1.339984
A method for improved short‐wavelength response in hydrogenated amorphous silicon‐based solar cells
J. Appl. Phys. 63, 1220–1222 (1988)
https://doi.org/10.1063/1.339985
Frequency dependence of capacitance‐voltage characteristics caused by DX centers in Si‐doped AlGaAs
J. Appl. Phys. 63, 1223–1224 (1988)
https://doi.org/10.1063/1.339986
A remote laser system for ultrasonic velocity measurement at high temperatures
J. Appl. Phys. 63, 1225–1227 (1988)
https://doi.org/10.1063/1.339987
A columnar‐growth mode in strained compositionally modulated Cu‐Ni: Cross‐sectional electron microscopy
J. Appl. Phys. 63, 1228–1230 (1988)
https://doi.org/10.1063/1.339988
Distribution of electron energy in an electrostatically confined silane plasma
J. Appl. Phys. 63, 1230–1232 (1988)
https://doi.org/10.1063/1.339989
Spectral hole‐burning and gain saturation in semiconductor lasers: Strong‐signal theory
J. Appl. Phys. 63, 1232–1235 (1988)
https://doi.org/10.1063/1.339990
Effects of substrate temperature on GaAs tunneling diodes grown by molecular beam epitaxy
J. Appl. Phys. 63, 1238–1240 (1988)
https://doi.org/10.1063/1.339991
Ga0.5In0.5P/GaAs interfaces by organometallic vapor‐phase epitaxy
J. Appl. Phys. 63, 1241–1243 (1988)
https://doi.org/10.1063/1.339992
High‐performance short‐wavelength single quantum well pump lasers
J. Appl. Phys. 63, 1246–1247 (1988)
https://doi.org/10.1063/1.339995
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.