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Operation of a 120‐MW ion beam source using an Applied‐Bθ ion diode
J. Appl. Phys. 62, 745–753 (1987)
https://doi.org/10.1063/1.339727
Sheath thickness and potential profiles of ion‐matrix sheaths for cylindrical and spherical electrodes
J. Appl. Phys. 62, 777–779 (1987)
https://doi.org/10.1063/1.339858
Influence of highly charged impurities on ion temperatures measured with active‐beam plasma diagnostics
J. Appl. Phys. 62, 780–786 (1987)
https://doi.org/10.1063/1.339732
Atomic chlorine concentration measurements in a plasma etching reactor. II. A simple predictive model
J. Appl. Phys. 62, 799–807 (1987)
https://doi.org/10.1063/1.339735
An electron‐spin resonance study of the structure of plasma‐deposited silicon‐oxynitride films
J. Appl. Phys. 62, 832–836 (1987)
https://doi.org/10.1063/1.339686
Characterization of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition
S. J. Pearton; S. M. Vernon; C. R. Abernathy; K. T. Short; R. Caruso; M. Stavola; J. M. Gibson; V. E. Haven; A. E. White; D. C. Jacobson
J. Appl. Phys. 62, 862–867 (1987)
https://doi.org/10.1063/1.339690
Growth and characterization of lattice‐matched CaxSr1−xF2 on GaAs(100)
J. Appl. Phys. 62, 875–878 (1987)
https://doi.org/10.1063/1.339692
Localized epitaxial growth of TaSi2 on (111) and (001)Si by rapid thermal annealing
J. Appl. Phys. 62, 879–884 (1987)
https://doi.org/10.1063/1.339693
Growth of ZnSe on Ge(100) substrates by molecular‐beam epitaxy
J. Appl. Phys. 62, 885–889 (1987)
https://doi.org/10.1063/1.339694
Insulating, metallic, or semimetallic electronic nature of XSi2 compounds: Application to WSi2
J. Appl. Phys. 62, 890–895 (1987)
https://doi.org/10.1063/1.339695
Temperature dependence of the dynamic response of the photorefractive signal in Bi12SiO20
J. Appl. Phys. 62, 896–899 (1987)
https://doi.org/10.1063/1.339696
Study of anomalous photovoltaic effect in vacuum‐deposited wedge‐shaped CdTe films
J. Appl. Phys. 62, 907–911 (1987)
https://doi.org/10.1063/1.339698
Degradation of tin‐doped indium‐oxide film in hydrogen and argon plasma
J. Appl. Phys. 62, 912–916 (1987)
https://doi.org/10.1063/1.339699
On the gate capacitance in n‐channel inversion layers on ternary semiconductors under magnetic quantization
J. Appl. Phys. 62, 922–924 (1987)
https://doi.org/10.1063/1.339701
Thermally stimulated persistent conductivity in n‐AlGaAs/GaAs heterostructures
J. Appl. Phys. 62, 939–941 (1987)
https://doi.org/10.1063/1.339704
Nonalloyed ohmic contacts to n‐GaAs by solid‐phase epitaxy of Ge
E. D. Marshall; B. Zhang; L. C. Wang; P. F. Jiao; W. X. Chen; T. Sawada; S. S. Lau; K. L. Kavanagh; T. F. Kuech
J. Appl. Phys. 62, 942–947 (1987)
https://doi.org/10.1063/1.339705
An analytical study of the p/n junction space‐charge region under high forward voltage
J. Appl. Phys. 62, 948–953 (1987)
https://doi.org/10.1063/1.339706
Epitaxial growth of NbN on an ultrathin MgO/semiconductor system
J. Appl. Phys. 62, 961–966 (1987)
https://doi.org/10.1063/1.339708
Theoretical approach to the optimal preheating temperature for cw CO2 laser annealing of semiconductors
J. Appl. Phys. 62, 1006–1009 (1987)
https://doi.org/10.1063/1.339756
Photoluminescence and energy‐loss rates in GaAs quantum wells under high‐density excitation
J. Appl. Phys. 62, 1010–1016 (1987)
https://doi.org/10.1063/1.339757
A new system for vacuum deposition of refractory materials using an atmospheric‐pressure inductively coupled plasma
J. Appl. Phys. 62, 1017–1021 (1987)
https://doi.org/10.1063/1.339859
A study of initial transient phenomena in the chemical vapor deposition process using silane plasma
J. Appl. Phys. 62, 1022–1028 (1987)
https://doi.org/10.1063/1.339758
Oxidation resistance of Pb‐Te‐Se optical recording film
J. Appl. Phys. 62, 1029–1034 (1987)
https://doi.org/10.1063/1.339759
The kinetics and mechanism of oxide layer formation from porous silicon formed on p‐Si substrates
J. Appl. Phys. 62, 1042–1048 (1987)
https://doi.org/10.1063/1.339761
The first stages of oxidation of a‐Si studied with Auger electron spectroscopy
J. Appl. Phys. 62, 1054–1058 (1987)
https://doi.org/10.1063/1.339763
Photolytic decomposition of gold metallopolymer thin films by UV laser direct writing
J. Appl. Phys. 62, 1070–1073 (1987)
https://doi.org/10.1063/1.339737
Thin‐film palladium and silver alloys and layers for metal‐insulator‐semiconductor sensors
J. Appl. Phys. 62, 1074–1083 (1987)
https://doi.org/10.1063/1.339738
Intrusions in the active layer of channeled‐substrate‐planar laser diodes
J. Appl. Phys. 62, 1093–1096 (1987)
https://doi.org/10.1063/1.339740
Effects of dislocations on threshold voltage of GaAs field‐effect transistors
J. Appl. Phys. 62, 1097–1101 (1987)
https://doi.org/10.1063/1.339715
New rapid thermal annealing for GaAs digital integrated circuits
J. Appl. Phys. 62, 1102–1107 (1987)
https://doi.org/10.1063/1.339716
Amplification of bipolar current flow by charge induced from an insulated gate electrode
J. Appl. Phys. 62, 1108–1111 (1987)
https://doi.org/10.1063/1.339717
Raman scattering studies of metalorganic chemical vapor deposition grown GaAs/AlAs superlattices
J. Appl. Phys. 62, 1112–1114 (1987)
https://doi.org/10.1063/1.339718
Shear strength of shock‐loaded alumina as determined with longitudinal and transverse manganin gauges
J. Appl. Phys. 62, 1120–1122 (1987)
https://doi.org/10.1063/1.339721
Thermal expansion and flow model for pit formation in laser marking of polymeric film optical disks
J. Appl. Phys. 62, 1123–1124 (1987)
https://doi.org/10.1063/1.339722
X‐ray diffraction analysis of buffer layer effects on lattice distortions of strained layer superlattices
J. Appl. Phys. 62, 1124–1127 (1987)
https://doi.org/10.1063/1.339831
Properties of zinc phosphide (Zn3P2) thin films prepared by hot‐wall technique under high Sb vapor pressure
J. Appl. Phys. 62, 1127–1129 (1987)
https://doi.org/10.1063/1.339723
Field emission effect on the rise time of small spark‐gap switches for N2 lasers
J. Appl. Phys. 62, 1132–1134 (1987)
https://doi.org/10.1063/1.339725
Plane crystalline films of stearic acid and ω‐heptadecenoic acid as electron‐beam resist
J. Appl. Phys. 62, 1134–1135 (1987)
https://doi.org/10.1063/1.339726
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.