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Microfields in stroboscopic voltage measurements via electron emisson. II. Effects on electron dynamics
J. Appl. Phys. 62, 4017–4023 (1987)
https://doi.org/10.1063/1.339113
IBEX magnetic field extraction and propagation experiments of intense high‐energy electron beams
J. Appl. Phys. 62, 4024–4035 (1987)
https://doi.org/10.1063/1.339114
Effective cross section of the Nd:YAG 1.0641‐μm laser transition
J. Appl. Phys. 62, 4041–4044 (1987)
https://doi.org/10.1063/1.339837
Thermal analysis of optical elements and arrays on thick substrates with convection cooling
J. Appl. Phys. 62, 4055–4064 (1987)
https://doi.org/10.1063/1.339117
Angular distribution of x‐ray radiation from optically thick z‐pinch plasmas
J. Appl. Phys. 62, 4090–4095 (1987)
https://doi.org/10.1063/1.339122
Electron spin resonance investigation of ion beam modified amorphous hydrogenated (diamondlike) carbon
J. Appl. Phys. 62, 4096–4099 (1987)
https://doi.org/10.1063/1.339123
The mechanism of polymer alignment of liquid‐crystal materials
J. Appl. Phys. 62, 4100–4108 (1987)
https://doi.org/10.1063/1.339124
Radiation damage of gallium arsenide induced by reactive ion etching
J. Appl. Phys. 62, 4109–4113 (1987)
https://doi.org/10.1063/1.339125
Enhanced elimination of implantation damage upon exceeding the solid solubility
J. Appl. Phys. 62, 4114–4117 (1987)
https://doi.org/10.1063/1.339126
Deformation behavior of undoped and In‐doped GaAs in the temperature range 700–1100 °C
J. Appl. Phys. 62, 4130–4134 (1987)
https://doi.org/10.1063/1.339129
A correlation between the enthalpy of mixing and the internal strain energy in the III‐V alloy semiconductor system
J. Appl. Phys. 62, 4142–4145 (1987)
https://doi.org/10.1063/1.339131
In situ ellipsometry comparison of the nucleation and growth of sputtered and glow‐discharge a‐Si:H
J. Appl. Phys. 62, 4146–4153 (1987)
https://doi.org/10.1063/1.339132
Composition and lattice‐mismatch measurement of thin semiconductor layers by x‐ray diffraction
J. Appl. Phys. 62, 4154–4158 (1987)
https://doi.org/10.1063/1.339133
CuInSe2 thin films produced by rf sputtering in Ar/H2 atmospheres
J. Appl. Phys. 62, 4163–4169 (1987)
https://doi.org/10.1063/1.339135
Observation on laser‐annealed silicon‐on‐insulator structures by cross‐sectional transmission electron microscopy
J. Appl. Phys. 62, 4170–4173 (1987)
https://doi.org/10.1063/1.339136
Orientation control of the silicon film on insulator by laser recrystallization
J. Appl. Phys. 62, 4178–4181 (1987)
https://doi.org/10.1063/1.339085
Selective porous silicon formation in buried p+ layers
J. Appl. Phys. 62, 4182–4186 (1987)
https://doi.org/10.1063/1.339086
Nonlinear optical properties of the electron‐hole plasma in Al0.52Ga0.48As
J. Appl. Phys. 62, 4187–4191 (1987)
https://doi.org/10.1063/1.339087
Electrical conduction in a polyblend of poly(methyl methacrylate) and poly(vinyl acetate)
J. Appl. Phys. 62, 4196–4199 (1987)
https://doi.org/10.1063/1.339089
Envelope function description of double‐heterojunction quantum wells
J. Appl. Phys. 62, 4200–4203 (1987)
https://doi.org/10.1063/1.339090
Scattering of silicon inversion layer electrons by metal/oxide interface roughness
J. Appl. Phys. 62, 4212–4215 (1987)
https://doi.org/10.1063/1.339092
Optical detection of injected charge carriers in polymer films via Stark spectroscopy
J. Appl. Phys. 62, 4226–4230 (1987)
https://doi.org/10.1063/1.339094
Photoelectronic and optical properties of amorphous gallium‐selenide thin films
J. Appl. Phys. 62, 4231–4235 (1987)
https://doi.org/10.1063/1.339095
Organized and semiorganized doping for ZnS:Mn electroluminescent devices
J. Appl. Phys. 62, 4244–4247 (1987)
https://doi.org/10.1063/1.339097
Characterization of GaAs wafers and epilayers with electron‐beam‐induced current, etching, and reflected light
J. Appl. Phys. 62, 4248–4254 (1987)
https://doi.org/10.1063/1.339098
Plasma characteristics and etch uniformity in CF4 magnetron etching using an annular permanent magnet
J. Appl. Phys. 62, 4269–4272 (1987)
https://doi.org/10.1063/1.339100
Lithographic properties of amorphous WO3 films exposed to photons, electrons, and hydrogen plasma
J. Appl. Phys. 62, 4273–4276 (1987)
https://doi.org/10.1063/1.339101
Observation of a high‐resistance to a low‐resistance transition in a silicon bicrystal
J. Appl. Phys. 62, 4291–4293 (1987)
https://doi.org/10.1063/1.339104
Observation of magnetic forces by the atomic force microscope
J. J. Sáenz; N. García; P. Grütter; E. Meyer; H. Heinzelmann; R. Wiesendanger; L. Rosenthaler; H. R. Hidber; H.‐J. Güntherodt
J. Appl. Phys. 62, 4293–4295 (1987)
https://doi.org/10.1063/1.339105
Phase transitions and ferroelectric attributes in A5M3F19 compounds with A=Sr, Ba and M=Ti, V, Cr, Fe, Ga
J. Appl. Phys. 62, 4299–4301 (1987)
https://doi.org/10.1063/1.339107
1/f noise in a quarter‐micron GaAs Hall device made by focused ion‐beam implantation
J. Appl. Phys. 62, 4301–4303 (1987)
https://doi.org/10.1063/1.339108
Plasma‐processed Ag/P4Se10 (80° deposited) films as a negative resist
J. Appl. Phys. 62, 4303–4305 (1987)
https://doi.org/10.1063/1.339109
Fundamental differences between thick and thin oxides subjected to high electric fields
J. Appl. Phys. 62, 4305–4308 (1987)
https://doi.org/10.1063/1.339110
Effect of carbon concentration on the electrical properties of liquid‐encapsulated Czochralski semi‐insulating GaAs
J. Appl. Phys. 62, 4316–4318 (1987)
https://doi.org/10.1063/1.339835
Oxygen behavior during titanium silicide formation by rapid thermal annealing
J. Appl. Phys. 62, 4319–4321 (1987)
https://doi.org/10.1063/1.339062
On the measurement of excess carrier lifetime in semiconductors by the use of penetrating radiation
J. Appl. Phys. 62, 4324–4325 (1987)
https://doi.org/10.1063/1.339064
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.